WO2009104279A1 - Chip fuse and process for producing the same - Google Patents
Chip fuse and process for producing the same Download PDFInfo
- Publication number
- WO2009104279A1 WO2009104279A1 PCT/JP2008/053550 JP2008053550W WO2009104279A1 WO 2009104279 A1 WO2009104279 A1 WO 2009104279A1 JP 2008053550 W JP2008053550 W JP 2008053550W WO 2009104279 A1 WO2009104279 A1 WO 2009104279A1
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- WIPO (PCT)
- Prior art keywords
- heat storage
- storage layer
- fuse
- film
- insulating substrate
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H69/00—Apparatus or processes for the manufacture of emergency protective devices
- H01H69/02—Manufacture of fuses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/05—Component parts thereof
- H01H85/055—Fusible members
- H01H85/08—Fusible members characterised by the shape or form of the fusible member
- H01H85/10—Fusible members characterised by the shape or form of the fusible member with constriction for localised fusing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/0039—Means for influencing the rupture process of the fusible element
- H01H85/0047—Heating means
- H01H85/006—Heat reflective or insulating layer on the casing or on the fuse support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/0039—Means for influencing the rupture process of the fusible element
- H01H85/0047—Heating means
- H01H85/0065—Heat reflective or insulating layer on the fusible element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/046—Fuses formed as printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/0241—Structural association of a fuse and another component or apparatus
- H01H2085/0283—Structural association with a semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
- H01H2085/0414—Surface mounted fuses
Definitions
- the present invention relates to a chip fuse and a manufacturing method thereof, and more particularly to a chip fuse in which an upper layer and a lower layer of a fuse element portion are formed by a film having low thermal conductivity and a manufacturing method thereof.
- Patent Document 1 As a technique already disclosed regarding the chip fuse, there is one described in Patent Document 1. This relates to a chip fuse in which a silicone resin film is formed on the top surface of an inorganic substrate, a fuse film is formed on the silicone resin film, and a protective film is formed on the fuse film with a silicone resin.
- the thickness of the silicone resin film on the upper surface of the substrate is exemplified as 10 ⁇ m.
- the use of silicone resin prevents melting and ignition of solder at the connection portion with the printed wiring board.
- the material and heat transfer area of the fuse element are changed.
- limited is left.
- Patent Document 2 relating to a method of manufacturing a chip fuse
- the temperature rise until fusing is determined and the fusing time is determined by the balance between the heat generation amount of the fuse element and the heat dissipation amount to the surrounding members. It is described.
- the factors affecting the fusing time are the resistance value, the heat transfer area, and the heat transfer rate.
- the resistance value is a factor for the heat generation amount.
- the heat transfer area and the heat transfer rate are factors for the heat release amount. It is described that these factors need to be examined in order to increase the degree of freedom of the fusing characteristics of the chip fuse.
- Patent Document 2 does not specifically examine the material and heat transfer area of the members around the fuse element, and also shows means and methods for controlling the heat radiation from the fuse element to the surrounding members. It has not been.
- the present invention solves the above-mentioned problems, and its purpose is not to limit the degree of freedom of the fusing characteristics, and to prevent the fusing time at a high magnification relative to the rated current from being shortened, and to the rated current.
- Another object of the present invention is to provide a chip fuse manufacturing method capable of forming the above-described chip fuse with high accuracy and relatively easily.
- a first heat storage layer made of a film material having low thermal conductivity is formed on an insulating substrate, a fuse film is formed on the first heat storage layer so as not to contact the insulating substrate, and the fuse film Has a fuse element part between front electrode parts arranged at both ends, a second heat storage layer made of a film material having low thermal conductivity is formed on the fuse element part, and the first element A chip fuse in which the heat storage layer is formed thicker than the second heat storage layer.
- the first heat storage layer and the second heat storage layer made of a film material having low thermal conductivity are formed from a sheet-like material in a B stage state (semi-cured state) containing a photosensitive group.
- a first heat storage layer is formed on an insulating substrate, a fuse film is formed on the first heat storage layer, and the fuse film has a fuse element portion between front electrode portions disposed at both ends.
- a method for manufacturing a chip fuse in which a second heat storage layer is formed on a fuse element portion, and a sheet in a B stage state (semi-cured state) containing a photosensitive group and having a substantially uniform thickness Forming a first heat storage layer by overlapping a predetermined number of sheet-like materials on an insulating substrate, forming a fuse film on the first heat storage layer so as not to contact the insulating substrate, and between the surface electrode portions Forming a fuse element portion and a step of forming a second heat storage layer by superposing a predetermined number of the same B-stage sheet-like material used for the first heat storage layer between both surface electrode portions.
- the manufacturing method of the chip fuse characterized in that to increase the number
- the low thermal conductivity film material constituting the first heat storage layer and the second heat storage layer is preferably a film material having a thermal conductivity of about 0.1 to 0.4 W / m ° C.
- a resin material such as an acrylate resin or an epoxy resin and a sheet-like material containing a photosensitive group.
- heat storage layers made of a film material having low thermal conductivity are provided on the upper and lower sides of the fuse film, respectively, and the lower heat storage layer is formed thicker than the upper heat storage layer.
- the degree is not limited, and it is possible to prevent the fusing time at a high magnification with respect to the rated current from being shortened, and to shorten the fusing time at a low magnification with respect to the rated current. That is, when the chip fuse is energized and the temperature of the fuse element rises, the heat is transferred downward and stored in the first heat storage layer, while the heat transferred upward is stored in the second heat storage layer.
- the insulating substrate since the insulating substrate has a higher thermal conductivity than air, the insulating substrate is formed from the first heat storage layer by forming the first heat storage layer thicker than the second heat storage layer. Therefore, it is possible to shorten the fusing time by confining the heat at a low magnification with a small amount of heat. Further, the second heat storage layer formed relatively thinner than the first heat storage layer can prevent the fusing time from being shortened by releasing heat at a high magnification with a large amount of heat.
- a first heat storage layer is formed by overlapping a predetermined number of B-staged sheet-like materials formed on an insulating substrate with a substantially uniform thickness.
- a second heat storage layer is formed by overlapping a predetermined number of sheet materials in the same B stage state. Since these sheet-like materials are rich in thickness, the first and second heat storage layers can be accurately and relatively easily formed to a desired thickness by adjusting the number of superimposed sheets. it can.
- FIG. 2A is a cross-sectional view taken along line AA in FIG. 2
- FIG. 3B is a cross-sectional view taken along line BB in FIG.
- It is the graph which compared the fusing characteristic of the chip fuse of this invention, and a prior art example. It is the graph which expanded and showed the low magnification range in FIG. It is the graph which expanded and showed the high magnification range in FIG.
- a first heat storage layer 12 made of a film material having low thermal conductivity is formed on an insulating substrate 11
- a fuse film 13 is provided on the first heat storage layer 12, and the fuse film 13 is And a front electrode portion 13a arranged at both ends, and a fuse element portion 13b formed with a relatively narrow width so as to connect the front electrode portions 13a at both ends, and a part of the front electrode portion 13a and a fuse element Ni and Sn plating film or Sn plating film is formed on the entire surface of the portion 13 b, and this plating film becomes the fusing part 14.
- a second heat storage layer 15 made of a film material having low thermal conductivity is provided on the fusing part 14 in a slightly larger area than the fusing part 14, and the protective layer 16 is provided on the second heat storage layer 15.
- the back electrode 17 is provided on both ends of the back side of the insulating substrate 11, the end face electrodes 18 are provided on both end faces of the insulating substrate 11, and the electrode plating film 19 connects the front electrode 13 a, the end face electrode 18, and the back electrode 17. It is provided to cover.
- an alumina substrate is used as the insulating substrate 11, and a film material having low thermal conductivity constituting the first heat storage layer 12 and the second heat storage layer 15 has a thermal conductivity of 0.1 to 0.00.
- a film material of about 4 W / m ° C. is preferable.
- a B-stage (semi-cured) sheet-like material having a thickness of about 30 ⁇ m containing a resin material such as an acrylate resin or an epoxy resin and a photosensitive group, respectively. A predetermined number can be used.
- first heat storage layer 12 is formed by superimposing two sheets of the B-stage state sheet material, and the second heat storage layer 15 is formed using one sheet material of the same B-stage state,
- This heat storage layer 12 can be formed thicker than the second heat storage layer 15.
- a material obtained by curing a resin material such as an acrylate resin or an epoxy resin and a sheet-like material in a B stage state containing a photosensitive group is excellent in chemical resistance against an etching solution and has low thermal conductivity.
- the first heat storage layer 12 covers almost the entire surface of the insulating substrate 11 except for the predetermined portions of the primary dividing grooves 11a and the secondary dividing grooves 11b of the insulating substrate 11, and the first heat storage layer 12
- the removed portion 12a from which the slag has been removed is formed in a shape and arrangement as shown in FIGS. 1B and 1C, that is, in an elongated range straddling a predetermined length of the primary divided groove 11a and the secondary divided groove 11b.
- the fuse film 13 is laminated on the first heat storage layer 12 in a shape as shown in FIG. 1D so as not to contact the insulating substrate 11.
- the degree of freedom of the fusing characteristics is not limited, and the rated current It is possible to prevent the fusing time at a high magnification from being shortened and shorten the fusing time at a low magnification with respect to the rated current.
- FIGS. 1 (a) and 1 (b) An alumina substrate having an alumina purity of about 96% is used as a collective insulating substrate for manufacturing a chip fuse.
- the chip fuse 10 is manufactured by forming each component over a plurality of layers on a collective insulating substrate and cutting in the vertical and horizontal directions.
- the chip fuse 10 is formed on the collective insulating substrate.
- 1 (c), (d) and FIGS. 2 (e) to (h) a plan view of one section on the collective insulating substrate, that is, one section serving as a chip fuse, is shown.
- a primary dividing groove 11a and a secondary dividing groove 11b for cutting are formed on the collective insulating substrate 11 by means of a laser or the like.
- Some collective insulating substrates have primary division grooves 11a and secondary division grooves 11b formed in advance, and when such collective insulation substrates are used, the step of forming grooves is omitted.
- the sheet-like material includes a resin material such as an acrylate resin and an epoxy resin, and a photosensitive group, and a B-stage material formed to a thickness of about 30 ⁇ m is used.
- a resin material such as an acrylate resin and an epoxy resin, and a photosensitive group
- a B-stage material formed to a thickness of about 30 ⁇ m is used.
- one sheet-like material in the B stage state is attached onto the collective insulating substrate 11, heated to a predetermined temperature and pressurized at a predetermined pressure, and then another sheet-like material is further attached. On top of that, it is pressed and laminated while heating in the same manner.
- the two sheet-like materials heated and pressurized have a thickness of about 56 ⁇ m after bonding.
- the thickness of the first heat storage layer 12 can be adjusted with high accuracy by overlapping a predetermined number of sheets of the B-stage state sheet material.
- the sheet-like material is exposed to ultraviolet rays of 500 mJ / cm 2 through a photomask and then immersed in 1 wt% of a sodium carbonate solution for several minutes.
- the sheet-like material is shown in FIGS. 1B and 1C. Formed into a different shape.
- the 1st thermal storage layer 12 from which the removal part 12a was removed is formed on the insulated substrate 11.
- FIG. By using a sheet-like material containing a photosensitive group and carrying out the steps as described above, the dimensional accuracy of the planar shape of the first heat storage layer 12 can be increased, and variation in fusing characteristics can be reduced. Can do.
- [Process for forming fuse film melted part] 2E is formed by providing Ni and Sn plating film or Sn plating film on the entire surface of the fuse element part 13b in the fuse film 13 and a part of the surface electrode part 13a continuous on both sides by electroplating.
- the fusing part 14 as shown in FIG. 5 is formed, thereby giving an M effect to the fuse film 13 to obtain fusing characteristics.
- the second heat storage layer 15 is formed in a range that covers the entire fusing part 14.
- the second heat storage layer 15 also uses a B-stage sheet-like material formed to the same thickness as the first heat storage layer 12 and has a thickness of about 30 ⁇ m. Adhering and bonding at a predetermined pressure while heating to a predetermined temperature. This single sheet material has a thickness of about 25 ⁇ m after bonding. The adhered sheet-like material is exposed to ultraviolet rays through a photomask, and then immersed in a sodium carbonate solution for several minutes to form the shape shown in FIG.
- the protective layer 16 is formed in a slightly wider range so as to cover the entire second heat storage layer 15.
- the protective layer 16 is a film formed from an epoxy-based resin material by screen printing, thereby improving concealment and mechanical strength.
- a silver paste is applied to the back side of the collective insulating substrate 11 by screen printing and baked to form the back electrode 17.
- the aggregated insulating substrate is cut along the primary dividing grooves 11a to form a strip-shaped insulating substrate, and a silver paste is applied and baked on the side surface in the long side direction of the strip-shaped insulating substrate, or a sputtering method.
- the end face electrode 18 is formed by forming a Cr film and a Ni film.
- the strip-shaped insulating substrate is cut along the secondary dividing grooves 11b to form chips one by one, and the electrode plating film 19 made of Cu film, Ni film and Sn film is sequentially formed by barrel plating. 2 (h) and FIG. 3, the chip fuse 10 of the present invention is completed.
- FIG. 4 is a graph comparing the fusing characteristics of a chip fuse having a rated current of 1A according to an embodiment of the present invention and a chip fuse of a comparative example.
- FIG. 5 is a graph in which the range in which the rated current ratio is low in FIG. 4 is enlarged
- FIG. 6 is a graph in which the range in which the rated current ratio is high in FIG.
- Sample C is an embodiment of the present invention, in which the first heat storage layer is formed to be approximately 60 ⁇ m and the second heat storage layer is formed to be approximately 30 ⁇ m.
- the chip fuses of Samples A, B, and D are comparative examples.
- the relative thickness relationship between the first heat storage layer and the second heat storage layer is the chip fuse according to the present invention.
- the first heat storage layer is formed to be approximately 30 ⁇ m
- the second heat storage layer is formed to be approximately 30 ⁇ m
- the first heat storage layer is formed to be approximately 30 ⁇ m
- the second heat storage layer is formed to be approximately 60 ⁇ m
- the first heat storage layer is formed to be approximately 60 ⁇ m
- the second heat storage layer is formed to be approximately 60 ⁇ m.
- the chip fuse of the present invention can prevent the fusing time at a high magnification with respect to the rated current from being shortened and shorten the fusing time at a low magnification with respect to the rated current. .
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Abstract
Description
この特許文献1では、シリコーン樹脂を使用することにより、プリント配線板との接続部のはんだの溶融、発火を阻止することが述べられているが、ヒューズエレメントの材料及び伝熱面積等を変えても、溶断特性の自由度が制限されてしまう課題は残される。 As a technique already disclosed regarding the chip fuse, there is one described in
In this
しかしながら、この特許文献2では、ヒューズエレメント周りの部材の材質や伝熱面積については、具体的に検討されておらず、ヒューズエレメントから周りの部材への放熱量を制御する手段や方法についても示されていない。
However, this Patent Document 2 does not specifically examine the material and heat transfer area of the members around the fuse element, and also shows means and methods for controlling the heat radiation from the fuse element to the surrounding members. It has not been.
また本発明は、上述のようなチップヒューズを精度良く、且つ比較的容易に形成することが可能なチップヒューズの製造方法を提供することである。 The present invention solves the above-mentioned problems, and its purpose is not to limit the degree of freedom of the fusing characteristics, and to prevent the fusing time at a high magnification relative to the rated current from being shortened, and to the rated current. A chip fuse capable of shortening a fusing time at a low magnification and a manufacturing method thereof.
Another object of the present invention is to provide a chip fuse manufacturing method capable of forming the above-described chip fuse with high accuracy and relatively easily.
すなわち、チップヒューズに通電してヒューズ要素部の温度が上昇すると、その熱は下方に伝わり第一の蓄熱層に蓄えられ、一方、上方に伝わった熱は第二の蓄熱層に蓄えられる。一般的に、絶縁基板の方が空気よりも熱伝導率が高いものであるため、第一の蓄熱層を第二の蓄熱層よりも厚く形成することにより、第一の蓄熱層から絶縁基板を介して下方に逃げる熱を抑制し、これにより熱量の少ない低倍率では熱を閉じ込めることによって溶断時間を短くすることが可能になった。また第一の蓄熱層よりも比較的薄く形成された第二の蓄熱層により、熱量の多い高倍率では熱を放出することによって溶断時間が短くなることの防止が可能になった。 In the chip fuse of the present invention, heat storage layers made of a film material having low thermal conductivity are provided on the upper and lower sides of the fuse film, respectively, and the lower heat storage layer is formed thicker than the upper heat storage layer. The degree is not limited, and it is possible to prevent the fusing time at a high magnification with respect to the rated current from being shortened, and to shorten the fusing time at a low magnification with respect to the rated current.
That is, when the chip fuse is energized and the temperature of the fuse element rises, the heat is transferred downward and stored in the first heat storage layer, while the heat transferred upward is stored in the second heat storage layer. Generally, since the insulating substrate has a higher thermal conductivity than air, the insulating substrate is formed from the first heat storage layer by forming the first heat storage layer thicker than the second heat storage layer. Therefore, it is possible to shorten the fusing time by confining the heat at a low magnification with a small amount of heat. Further, the second heat storage layer formed relatively thinner than the first heat storage layer can prevent the fusing time from being shortened by releasing heat at a high magnification with a large amount of heat.
11 集合絶縁基板
12 第一の蓄熱層
13 ヒューズ膜
13a 表電極部
13b ヒューズ要素部
14 溶断部
15 第二の蓄熱層 DESCRIPTION OF
チップヒューズ10は、絶縁基板11の上に熱伝導性の低い膜材料からなる第一の蓄熱層12が形成され、第一の蓄熱層12の上にヒューズ膜13が設けられ、ヒューズ膜13は、両端に配置された表電極部13aと、これら両端の表電極部13aを接続するように比較的狭い幅で形成されたヒューズ要素部13bとを有し、表電極部13aの一部分とヒューズ要素部13bの全面とにNiとSnめっき膜またはSnめっき膜が形成され、このめっき膜が溶断部14となる。さらに、溶断部14の上には、溶断部14よりも若干広い領域に熱伝導性の低い膜材料からなる第二の蓄熱層15が設けられ、第二の蓄熱層15の上に保護層16が形成され、絶縁基板11の裏側の両端に裏電極17が設けられ、絶縁基板11の両端面に端面電極18が設けられ、電極めっき膜19が表電極13a、端面電極18及び裏電極17を覆うように設けられる。 1 (a) to 1 (d) and FIGS. 2 (e) to (h) are plan views showing steps of manufacturing the
In the
第一の蓄熱層12は、絶縁基板11の一次分割溝11aと2次分割溝11bとの所定箇所を除いて、絶縁基板11のほぼ全面を被覆するものであり、この第一の蓄熱層12が除去された除去部12aは、図1(b)(c)に示したような形状及び配置、すなわち、一次分割溝11aと2次分割溝11bとの所定長を跨いだ細長い範囲に形成される。ヒューズ膜13は、絶縁基板11に接触しないように、図1(d)に示したような形状で第一の蓄熱層12の上に積層される。 Here, an alumina substrate is used as the
The first
最初に、レーザー等の手段により集合絶縁基板11に切断用の一次分割溝11aと二次分割溝11bとを刻設する。集合絶縁基板には、予め一次分割溝11aと二次分割溝11bとが形成されたものもあり、このような集合絶縁基板を使用する場合には、溝の刻設工程は省かれる。 [Groove-cutting process for collective insulating substrate]
First, a
第一の蓄熱層12を形成するため、集合絶縁基板11上に所定枚数のシート状材料を貼り付ける。シート状材料は、アクリレート樹脂、エポキシ樹脂などの樹脂材料及び感光基を含み、厚さ30μm程度に形成されたBステージ状態のものを使用する。貼り付け工程は、このBステージ状態のシート状材料の一枚を集合絶縁基板11上に貼り付け、所定温度に加熱し、所定圧力で加圧した後に、さらに、もう一枚のシート状材料をその上に同様に加熱しながら加圧して貼り重ねる。加熱、加圧された二枚のシート状材料は接着後に厚さ56μm程度になる。このように、Bステージ状態のシート状材料を所定枚数だけ重ね合わせることにより、第一の蓄熱層12の厚さを高い精度で調整することができる。
次に、シート状材料の上にフォトマスクを介して紫外線500mJ/cm2で露光した後、炭酸ナトリウム溶液1wt%に数分間浸漬し、シート状材料を、図1(b)(c)に示した形状に形成する。これにより、除去部12aが取り除かれた第一の蓄熱層12が絶縁基板11上に形成される。
シート状材料として感光基を含むものを使用し、上述のような工程を実施することにより、第一の蓄熱層12の平面形状の寸法精度を高めることができ、溶断特性のばらつきを低減することができる。 [Formation process of first heat storage layer]
In order to form the first
Next, the sheet-like material is exposed to ultraviolet rays of 500 mJ / cm 2 through a photomask and then immersed in 1 wt% of a sodium carbonate solution for several minutes. The sheet-like material is shown in FIGS. 1B and 1C. Formed into a different shape. Thereby, the 1st
By using a sheet-like material containing a photosensitive group and carrying out the steps as described above, the dimensional accuracy of the planar shape of the first
第一の蓄熱層12を形成した集合絶縁基板11上に厚さがほぼ3μm程度の電解銅箔又は圧延銅箔を貼り付ける。この貼り付け工程は、常温よりも高い温度で所定圧力を所定時間加えることにより行われる。次に、電解銅箔の上にネガタイプのドライフィルムを貼るか、又は液状のレジストを塗布し、その上からフォトマスクを介して露光した後、電解銅箔をエッチングしてドライフィルム又は液状レジストを剥離させる。以上のような工程により、ヒューズ膜13を図1(d)に示したような平面形状に形成する。 [Fuse film formation process]
An electrolytic copper foil or a rolled copper foil having a thickness of about 3 μm is pasted on the collective insulating
ヒューズ膜13におけるヒューズ要素部13bの全面と、この両側に連続する表電極部13aの一部分には、電気めっき法により、NiとSnめっき膜またはSnめっき膜を設けることで、図2(e)に示したような溶断部14を形成し、これによりヒューズ膜13にM効果を与えて溶断特性を得る。 [Process for forming fuse film melted part]
2E is formed by providing Ni and Sn plating film or Sn plating film on the entire surface of the
次に、図2(f)に示したように、溶断部14を全て覆う範囲に第二の蓄熱層15を形成する。第二の蓄熱層15も、第一の蓄熱層12と同じ厚さ30μm程度に形成されたBステージ状態のシート状材料を使用し、このシート状材料の一枚を集合絶縁基板11の全域に貼り付け、所定温度に加熱しながら所定圧力で接着する。この一枚のシート状材料は接着後に厚さ25μm程度になる。接着したシート状材料にはフォトマスクを介して紫外線を露光し、その後に、炭酸ナトリウム溶液に数分間浸漬し、図1(g)に示した形状に形成する。 [Second heat storage layer forming step]
Next, as shown in FIG. 2 (f), the second
次に、第二の蓄熱層15を全て覆うように、これより若干広い範囲に保護層16を形成する。保護層16は、スクリーン印刷によりエポキシ系樹脂材料から形成される膜であり、これにより隠蔽性や機械的強度が高められる。 [Protective layer forming step]
Next, the
保護層16を形成した後に、集合絶縁基板11の裏側にスクリーン印刷法で銀ペーストを塗布して焼き付け、裏電極17を形成する。次に、集合絶縁基板を一次分割溝11aに沿って切断して短冊状の絶縁基板を形成し、この短冊状絶縁基板の長辺方向の側面に銀ペーストを塗布して焼き付けること、またはスパッタ法により、Cr膜とNi膜を成膜することにより端面電極18を形成する。さらに、短冊状の絶縁基板を2次分割溝11bに沿って切断し、一個ずつのチップ形状とし、バレルめっき法により、Cu膜、Ni膜及びSn膜からなる電極めっき膜19を順次形成すれば、図2(h)及び図3に示したように、本発明のチップヒューズ10が完成する。 [Back electrode, end face electrode formation process]
After forming the
ここで、サンプルCは本発明の一実施形態であり、第一の蓄熱層がほぼ60μm、第二の蓄熱層がほぼ30μmに形成されたものである。
一方、サンプルA,B,Dのチップヒューズは比較例であり、何れのサンプルも、第一の蓄熱層と第二の蓄熱層との相対的な厚さの関係が本発明によるチップヒューズとは異なるものであるが、これ以外の構成は本発明のチップヒューズと同様に形成されたものである。サンプルAは第一の蓄熱層がほぼ30μm、第二の蓄熱層がほぼ30μmに形成されたものである。サンプルBは第一の蓄熱層がほぼ30μm、第二の蓄熱層がほぼ60μmに形成されたものである。サンプルDは第一の蓄熱層がほぼ60μm、第二の蓄熱層がほぼ60μmに形成されたものである。
本発明の一実施形態であるサンプルCと、サンプルD(第一の蓄熱層がサンプルCと同じ厚さ)とを比較すると、定格電流比が低い範囲では、図5に示したように、サンプルCのほうがサンプルDよりも溶断時間が短い。一方、定格電流比が高い範囲では、図6に示したように、サンプルCのほうがサンプルDよりも溶断時間が長い。このことから、本発明のチップヒューズは、定格電流に対して高倍率での溶断時間が短くなることを防止し、定格電流に対する低倍率での溶断時間を短くすることが可能になることが分かる。 Next, FIG. 4 is a graph comparing the fusing characteristics of a chip fuse having a rated current of 1A according to an embodiment of the present invention and a chip fuse of a comparative example. FIG. 5 is a graph in which the range in which the rated current ratio is low in FIG. 4 is enlarged, and FIG. 6 is a graph in which the range in which the rated current ratio is high in FIG.
Here, Sample C is an embodiment of the present invention, in which the first heat storage layer is formed to be approximately 60 μm and the second heat storage layer is formed to be approximately 30 μm.
On the other hand, the chip fuses of Samples A, B, and D are comparative examples. In any sample, the relative thickness relationship between the first heat storage layer and the second heat storage layer is the chip fuse according to the present invention. Although different, other configurations are formed in the same manner as the chip fuse of the present invention. In sample A, the first heat storage layer is formed to be approximately 30 μm, and the second heat storage layer is formed to be approximately 30 μm. In the sample B, the first heat storage layer is formed to be approximately 30 μm, and the second heat storage layer is formed to be approximately 60 μm. In sample D, the first heat storage layer is formed to be approximately 60 μm, and the second heat storage layer is formed to be approximately 60 μm.
When comparing the sample C, which is an embodiment of the present invention, with the sample D (the first heat storage layer has the same thickness as the sample C), in the range where the rated current ratio is low, as shown in FIG. C has a shorter fusing time than sample D. On the other hand, in the range where the rated current ratio is high, the fusing time of sample C is longer than that of sample D as shown in FIG. From this, it can be seen that the chip fuse of the present invention can prevent the fusing time at a high magnification with respect to the rated current from being shortened and shorten the fusing time at a low magnification with respect to the rated current. .
Claims (3)
- 熱伝導性の低い膜材料からなる第一の蓄熱層が絶縁基板上に形成され、当該第一の蓄熱層の上に絶縁基板に接触しないようにヒューズ膜が形成され、当該ヒューズ膜は両端に配置される表電極部の間にヒューズ要素部を有するものであり、当該ヒューズ要素部の上に熱伝導性の低い膜材料からなる第二の蓄熱層が形成され、前記第一の蓄熱層が前記第二の蓄熱層よりも厚く形成されたものであるチップヒューズ。 A first heat storage layer made of a film material having low thermal conductivity is formed on an insulating substrate, a fuse film is formed on the first heat storage layer so as not to contact the insulating substrate, and the fuse film is formed at both ends. A fuse element portion is provided between the surface electrode portions to be disposed, a second heat storage layer made of a film material having low thermal conductivity is formed on the fuse element portion, and the first heat storage layer is A chip fuse formed thicker than the second heat storage layer.
- 熱伝導性の低い膜材料からなる前記第一の蓄熱層及び前記第二の蓄熱層が、感光基を含有するBステージ状態のシート状材料から形成されたものである請求項1に記載のチップヒューズ。 2. The chip according to claim 1, wherein the first heat storage layer and the second heat storage layer made of a film material having low thermal conductivity are formed from a B-stage sheet material containing a photosensitive group. fuse.
- 絶縁基板上に第一の蓄熱層が形成され、第一の蓄熱層の上にヒューズ膜が形成され、ヒューズ膜は両端に配置される表電極部の間にヒューズ要素部を有し、ヒューズ要素部の上に第二の蓄熱層が形成されるチップヒューズの製造方法であって、
感光基を含有し、ほぼ均一の厚さに形成されたBステージ状態のシート状材料を絶縁基板上に所定枚数重畳して第一の蓄熱層を形成する工程と、絶縁基板に接触しないように第一の蓄熱層の上にヒューズ膜を形成するとともに、表電極部の間にヒューズ要素部を形成する工程と、前記第一の蓄熱層に使用した同じBステージ状態のシート状材料を両表電極部間に所定枚数重畳して第二の蓄熱層を形成する工程とを含み、
前記第一の蓄熱層の形成工程では、前記第二の蓄熱層の形成工程よりも、重畳するBステージ状態のシート状材料の枚数を多くすることを特徴とするチップヒューズの製造方法。 A first heat storage layer is formed on the insulating substrate, a fuse film is formed on the first heat storage layer, and the fuse film has a fuse element portion between front electrode portions arranged at both ends, and the fuse element A method for manufacturing a chip fuse in which a second heat storage layer is formed on a portion,
A step of forming a first heat storage layer by superposing a predetermined number of B-stage sheet-like materials containing a photosensitive group and formed in a substantially uniform thickness on the insulating substrate, so as not to contact the insulating substrate Forming a fuse film on the first heat storage layer and forming a fuse element portion between the front electrode portions, and the same B-stage sheet-like material used for the first heat storage layer Including a step of forming a second heat storage layer by overlapping a predetermined number of electrodes between the electrode parts,
In the first heat storage layer forming step, the number of sheets of the B-staged sheet material to be superimposed is increased as compared with the second heat storage layer forming step.
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US20130049679A1 (en) * | 2010-04-08 | 2013-02-28 | Sony Chemical & Information Device Corporation | Protection element, battery control device, and battery pack |
CN114765084A (en) * | 2021-01-12 | 2022-07-19 | 国巨电子(中国)有限公司 | Fuse resistor and method of manufacturing the same |
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CN101944463B (en) * | 2010-08-31 | 2012-11-28 | 广东风华高新科技股份有限公司 | Film sheet fuse and preparation method thereof |
JP5765530B2 (en) * | 2011-04-22 | 2015-08-19 | 双信電機株式会社 | Power fuse |
JP5979654B2 (en) * | 2012-09-28 | 2016-08-24 | 釜屋電機株式会社 | Chip fuse and manufacturing method thereof |
CN106783448A (en) * | 2017-02-28 | 2017-05-31 | 中山市思福电子厂 | A kind of resistance-type coiling fuse and its manufacturing process |
KR102095227B1 (en) | 2019-12-02 | 2020-03-31 | 장병철 | Manufacturing method of chip type fuse using thick film printing |
KR102095225B1 (en) | 2019-12-02 | 2020-03-31 | 장병철 | Chip type fuse using hybrid intergrated circuit technology |
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