200945398 六、發明說明： 【發明所屬之技術領域】 本發明，是有關晶片型保險絲及其製造方法’進一步 詳細說明的話，有關於藉由熱傳導性較低的膜形成保險絲 要素部的上層及下層的晶片型保險絲及其製造方法。 【先前技術】 Φ 有關晶片型保險絲的已揭示的技術’是如專利文獻1 。其是有關於在無機質的基板的上面形成矽樹脂膜，在此 矽樹脂膜的上形成保險絲膜，進一步，在保險絲膜上藉由 矽樹脂形成保護膜的晶片型保險絲，基板上面的矽樹脂膜 的厚度是例示1 Ομιη。 在此專利文獻1中，雖藉由使用矽樹脂，阻止印刷電 路板的連接部的焊鍚的熔融、發火阻止，但是即使改變保 險絲要素的材料及傳熱面積等，仍留下熔斷特性的自由度 φ 被限制的課題。 此外，有關於晶片型保險絲的製造方法的專利文獻2 中，記載了藉由保險絲要素的發熱量及朝周圍的構件的放 熱量的平衡，決定熔斷爲止的溫度上昇，熔斷時間。且， 影響此溶斷時間的因子，是記載了抵抗値、傳熱面積、熱 傳達率，抵抗値是發熱量的因子，進一步，傳熱面積及熱 傳達率是放熱量的因子’爲了提高晶片型保險絲的熔斷特 性的自由度，有需要對於這些的因子進行檢討。 但是’在此專利文獻2中’對於保險絲要素周圍的構 200945398 件的材質和傳熱面積，是未被具體檢討，對於將從保險絲 要素朝周圍的構件的放熱量控制的手段和方法也未揭示。 〔專利文獻1〕曰本特開平11-96886號公報 〔專利文獻2〕日本特開平9-320445號公報 【發明內容】 (本發明所欲解決的課題） 本發明，是爲了上述課題解決，其目的是提供一種晶 片型保險絲及其製造方法，熔斷特性的自由度不被限制， 可防止對於定格電流較高倍率中的熔斷時間縮短，並縮短 對於定格電流較低倍率中的熔斷時間。 且本發明，是提供晶片型保險絲的製造方法，可使上 述晶片型保險絲精度佳且比較容易形成。 (用以解決課題的手段） 在本發明中，藉由以下揭示的（1)至（3)的手段， 解決上述課題。 (1 ) 一種晶片型保險絲，由熱傳導性較低的膜材料 所構成的第一蓄熱層是形成於絕緣基板上，在該第一蓄熱 層上不與絕緣基板接觸的方式形成有保險絲膜，該保險絲 膜是在被配置於兩端的表電極部之間具有保險絲要素部， 在該保險絲要素部上形成有由熱傳導性較低的膜材料所構 成的第二蓄熱層，前述第一蓄熱層是比前述第二蓄熱層更 厚地形成。 -6- 200945398 (2 )如前述（1 )的晶片型保險絲，其中，由熱傳導 性較低的膜材料所構成的前述第一蓄熱層及前述第二蓄熱 層，是從含有感光基的B平台狀態（半硬化狀態）的薄片 狀材料所形成。 (3) —種晶片型保險絲的製造方法，該晶片型保險 絲，是在絕緣基板上形成有第一蓄熱層，在第一蓄熱層上 形成有保險絲膜，保險絲膜是在被配置於兩端的表電極部 0 之間具有保險絲要素部，在保險絲要素部上形成有第二蓄 熱層’其特徵爲，包含：含有感光基且將幾乎均一厚度形 成的B平台狀態（半硬化狀態）的薄片狀材料在絕緣基板 上重疊預定枚數形成第一蓄熱層的過程、及不與絕緣基板 接觸的方式在第一蓄熱層上形成保險絲膜並且在表電極部 之間形成保險絲要素部的過程、及將使用在前述第一蓄熱 層的相同的B平台狀態的薄片狀材料在兩表電極部之間重 疊預定枚數形成第二蓄熱層的過程，在前述第一蓄熱層的 Ο 形成過程中’使重疊的B平台狀態的薄片狀材料的枚數比 前述第二蓄熱層的形成過程更多。 對於本發明，構成第一蓄熱層及第二蓄熱層的熱傳導 性較低的膜材料，其熱傳導率是0.1〜〇.4W/m°C程度的膜 材料較佳’例如可使用丙烯酸酯樹脂、環氧樹脂等的樹脂 材料及含有感光基的薄片狀材料形成。 〔發明的效果〕 本發明的晶片型保險絲，因爲是將由熱傳導性較低的 200945398 膜材料所構成的蓄熱層各別設在保險絲膜的上下，將下層 的蓄熱層比上層的蓄熱層更厚地形成，所以熔斷特性的自 由度不被限制，可防止對於定格電流較高倍率中的熔斷時 間縮短’並縮短對於定格電流較低倍率中的熔斷時間。 即’在晶片型保險絲通電使保險絲要素部的溫度上昇 的話’其熱是朝下方傳達並被蓄存於第一蓄熱層，另一方 面’朝上方傳達的熱是被蓄存於第二蓄熱層。一般，絕緣 基板的熱傳導率因爲比空氣更高，所以藉由將第一蓄熱層 比第二蓄熱層更厚地形成，抑制從第一蓄熱層隔著絕緣基 板朝下方逃散的熱，由此在熱量少的較低倍率中藉由將熱 遮斷就可縮短熔斷時間。且藉由形成比第一蓄熱層更薄的 第二蓄熱層，在熱量多的較高倍率中藉由將熱放出就可防 止熔斷時間縮短。 且在本發明的晶片型保險絲的製造方法中，將在絕緣 基板上形成幾乎均一的厚度的B平台狀態的薄片狀材料重 疊預定枚數形成第一蓄熱層，在被設在此第一蓄熱層上的 保險絲膜上，進一步將相同的B平台狀態的薄片狀材料重 疊預定枚數形成第二蓄熱層。這些薄片狀材料，因爲其厚 度富有均一性，所以調整重疊的枚數的話’第一及第二蓄 熱層可以精度佳地形成所期的厚度且比較容易形成。 【實施方式】 以下，雖參照圖面說明本發明的一實施例，但是本發 明不限定於此。 -8- 200945398 第1圖（a)〜（d)及第2圖（e)〜（h)是顯不製 造本發明的晶片型保險絲1 〇的過程的平面圖，第3圖（a )是第2圖（h)的A-A線，第3圖（b)是第2圖（h) 的B-B線中的晶片型保險絲1 〇的剖面圖。 晶片型保險絲1〇’是在絕緣基板11上形成有由熱傳 導性較低的膜材料所構成的第一蓄熱層12，在第一蓄熱層 12上設有保險絲膜13，保險絲膜13，是具有：被配置於 φ 兩端的表電極部13a、及將這些兩端的表電極部13a連接 的方式由比較狹窄寬度形成的保險絲要素部13b，在表電 極部13a的一部分及保險絲要素部13b的全面形成有Ni 及Sn鍍膜或是Sn鍍膜，此鍍膜是成爲熔斷部14。進一 步’在熔斷部14上，在比熔斷部14更若干寬領域設有由 熱傳導性較低的膜材料所構成的第二蓄熱層15,在第二蓄 熱層15上形成有保護層16，在絕緣基板11的背側的兩端 設有背電極17’在絕緣基板的兩端面設有端面電極18 φ ’電極鍍膜19是覆蓋表電極13a、端面電極18及背電極 17的方式設置。 在此’絕緣基板11是使用氧化鋁基板，且構成第一 蓄熱層12及第二蓄熱層15的熱傳導性較低的膜材料，其 熱傳導率是0.1〜0.4w/m〇c程度的膜材料較佳，例如可以 各別使用預定枚數的丙烯酸酯樹脂、環氧樹脂等的樹脂.材 料及含有感光基的厚度3〇μηι程度的B平台狀態（半硬化 狀態）的薄片狀材料。例如，第一蓄熱層12，是將前述的 B平台狀態的薄片狀材料二枚重疊，第二蓄熱層15是使 200945398 用相同的B平台狀態的薄片狀材料一枚形成的話，就可以 將第一蓄熱層12比第二蓄熱層15更厚地形成。將此丙烯 酸酯樹脂、環氧樹脂等的樹脂材料及含有感光基的B平台 狀態的薄片狀材料硬化的話，對於蝕刻液的耐藥品性優異 ’且熱傳導性較低。 第一蓄熱層12，是除了絕緣基板11的一次分割溝 11a及2次分割溝lib的預定處，被覆絕緣基板11的幾乎 全面’此第一蓄熱層12被除去的除去部12a，是形成如第 1圖（b) (c)所示的形狀及配置，即形成橫跨一次分割 溝11a及2次分割溝lib的預定長的細長的範圍。保險絲 膜13，是不與絕緣基板11接觸的方式，由如第1圖（d) 所示的形狀層疊於第一蓄熱層12上。 如以上藉由將第一蓄熱層12形成比第二蓄熱層15更 厚例如幾乎2倍的厚度，熔斷特性的自由度不被限制，可 防止對於定格電流較高倍率中的熔斷時間縮短，並縮短對 於定格電流較低倍率中的熔斷時間。 接著，對於定格電流1A的晶片型保險絲10的製造方 法，參照第1圖及第2圖說明。將晶片型保險絲製造用的 集合絕緣基板，氧化鋁的純度是使用96%程度的氧化鋁基 板。晶片型保險絲10，雖是在集合絕緣基板上橫跨複數層 形成各構成，藉由在縱方向、橫方向切斷進行製造，但是 在第1圖（a) (b)中顯示集合絕緣基板上的複數區劃， 在第1圖（c) (d)及第2圖（e)〜（h)中顯示集合絕 緣基板上的一區劃，即一個晶片型保險絲的區劃的平面圖 -10- 200945398 〔集合絕緣基板的溝刻設過程〕 最初’藉由雷射等的手段在集合絕緣基板11刻設供 切斷用的一次分割溝11a及二次分割溝llb。在集合絕緣 基板中，預先形成有一次分割溝11a及二次分割溝lib， 使用這種集合絕緣基板的情況時，可節省溝的刻設過程。 〇 〔第一蓄熱層的形成過程〕 爲了形成第一蓄熱層12，在集合絕緣基板11上貼附 預定枚數的薄片狀材料。薄片狀材料，是使用丙烯酸酯樹 脂、環氧樹脂等的樹脂材料及包含感光基並形成厚度 30μιη程度的B平台狀態者。貼附過程，是將此b平台狀 態的薄片狀材料的一枚貼附在集合絕緣基板11上，加熱 至預定溫度，由預定壓力加壓之後，進一步，將另一枚的 〇 薄片狀材料一邊如上述同樣地加熱一邊加壓貼附重疊。被 加熱、加壓的二枚的薄片狀材料是在接合後成爲厚度 56μηι程度。如此，藉由將Β平台狀態的薄片狀材料只有 重疊預定枚數，就可以將第一蓄熱層12的厚度由較高的 精度調整。 接著，在薄片狀材料上隔著光罩由紫外線5〇〇mJ/em2 曝光之後，在碳酸鈉溶液lwt%浸漬數分鐘，將薄片狀材 料形成如第1圖（b) (c)所示的形狀。由此，除去部 12a被除去的第一蓄熱層12是形成於絕緣基板11上。 -11 - 200945398 s片狀材料是使用包含感光基者，藉由實施如上述過 程’就可以提高第一蓄熱層12的平面形狀的尺寸精度， 可以減低熔斷特性的參差不一。 〔保險絲膜的形成過程〕 在形成了第一蓄熱層12的集合絕緣基板11上貼附厚 度爲幾乎3 μιη程度的電解銅箔或是壓延銅箔。此貼附過程 ’是藉由比常溫更高的溫度加上預定壓力進行預定時間。 接著’在電解銅箔上貼上負片型的乾膜，或是塗抹液狀的 保護層’從其上隔著光罩曝光之後，將電解銅箔蝕刻使乾 膜或是液狀保護層剝離。藉由如以上的過程，將保險絲膜 1 3形成如第1圖（d )所示的平面形狀。 〔保險絲膜熔斷部的形成過程〕 在保險絲膜1 3中的保險絲要素部1 3 b的全面、及與 此兩側連續的表電極部13a的一部分中，藉由電鎪膜法， 藉由設置Ni及Sn鍍膜或是Sn鍍膜，形成如第2圖（e) 所示的的熔斷部14，由此可對於保險絲膜13給與Μ效果 而獲得熔斷特性。 〔第二蓄熱層的形成過程〕 接著，如第2圖（f)所示，在將熔斷部14全部覆蓋 的範圍形成第二蓄熱層15。第二蓄熱層15 ’也與第一蓄 熱層12相同使用厚度3〇Km程度的B平台狀態的薄片狀 200945398 材料’將此薄片狀材料的一枚貼附在集合絕緣基板11的 全域’一邊加熱至預定溫度一邊由預定壓力接合。此一枚 的薄片狀材料是在接合後成爲厚度25μηι程度。在已接合 的薄片狀材料中隔著光罩讓紫外線曝光，在其後，在碳酸 鈉溶液中浸漬數分鐘，形成如第1圖（）所示的形狀。 層 6 膜 3 熱 1 的 程蓄層成 過二護形 成第保料 形將成材 •2? ， 衫旨 *& Τ7 JJJ 層著圍樹 護接範系 保大氧 t 干環 15全部覆蓋的方式’在比其若 保護層16，是藉由網板印刷從 ，由此提高隱蔽性和機械強度。 〔背電極'端面電極等的形成過程〕 在形成了保護層16之後，在集合絕緣基板11的背側 由網板印刷法將銀膠塗抹燒接，形成背電極17。接著，將 集合絕緣基板沿著一次分割溝11a切斷形成詩箋（薄長方 〇 形）狀的絕緣基板，在此詩箋狀絕緣基板的長邊方向的側 面將銀膠塗抹燒接，或是藉由飛濺法，藉由將Cr膜及Ni 膜鍍膜而形成端面電極18。進一步，將詩箋狀的絕緣基板 沿著2次分割溝lib切斷，形成一個一個的晶片形狀，藉 由滾筒鍍膜法，將由Cu膜、Ni膜及Sn膜所構成的電極 鍍膜19依序形成的話，如第2圖（h)及第3圖所示，完 成本發明的晶片型保險絲10。 接著，第4圖，是將本發明的一實施例也就是定格電 流1 A的晶片型保險絲、及比較例的晶片型保險絲的熔斷 -13- 200945398 特性比較的圖表。第5圖是第4圖中的定格電流較低範圍 的擴大圖表，第6圖是第4圖中的定格電流較高範圍的擴 大圖表。 在此，樣品C是本發明的一實施例，第一蓄熱層是形 成幾乎60μιη，第二蓄熱層是形成幾乎3〇μπι。 另一方面，樣品A、Β、D的晶片型保險絲是比較例 ，其第一蓄熱層及第二蓄熱層的相對的厚度的關係雖與本 發明的晶片型保險絲不同，但是除此以外的結構是與本發 明的晶片型保險絲同樣地形成。樣品A的第一蓄熱層形成 幾乎30μιη，第二蓄熱層是形成幾乎3 0μιη。樣品B的第一 蓄熱層形成幾乎30μιη，第二蓄熱層形成幾乎60μηι。樣品 D是第一蓄熱層形成幾乎60μιη，第二蓄熱層形成幾乎 60μηι ° 將本發明的一實施例也就是樣品C、及樣品D (第一 蓄熱層是與樣品C相同厚度）比較的話，在定格電流比較 低的範圍中’如第5圖所示’樣品C的熔斷時間是比樣品 D更短。另一方面，在定格電流比較高的範圍中，如第6 圖所75，樣品C的溶斷時間是比樣品D更長。從此可知， 本發明的晶片型保險絲，可防止對於定格電流較高倍率中 的熔斷時間縮短，並縮短對於定格電流較低倍率中的熔斷 時間。 【圖式簡單說明】 〔第1圖〕（a )〜（d )是顯示晶片型保險絲的製造 -14- 200945398 過程的平面圖。 〔第2圖〕（e)〜（h)是顯示沿續第 π貝弟1圖的製造過 程的平面圖。 〔第3圖〕（〇是第2圖的Α-Α線的剖面圖，（b) 是第2圖的B-B線的剖面圖。 〔第4圖〕將本發明的晶片型保險絲及習知例的熔斷 特性比較的圖表。 φ 〔第5圖〕將第4圖中的較低倍率範圍擴大顯示的圖 表。 〔第6圖〕將第4圖中的較高倍率範圍擴大顯示的圖 表。 【主要元件符號說明】 1 0 :晶片型保險絲 1 1 :集合絕緣基板 〇 1 1 a : —次分割溝 1 1 b :二次分割溝 12 :蓄熱層 12a :除去部 1 3 :保險絲膜 13a :表電極部 1 3 b :保險絲要素部 14 :熔斷部 15 :蓄熱層 -15- 200945398 16 :保護層 17 :背電極 1 8 :端面電極 19 :電極鑛膜[Technical Field] The present invention relates to a wafer-type fuse and a method of manufacturing the same, and further relates to forming an upper layer and a lower layer of a fuse element portion by a film having low thermal conductivity. Wafer type fuse and its manufacturing method. [Prior Art] Φ The disclosed technology relating to a wafer type fuse is as disclosed in Patent Document 1. It is a wafer-type fuse in which a resin film is formed on an inorganic substrate, a fuse film is formed on the resin film, and a protective film is formed on the fuse film by a resin, and a resin film on the substrate is formed. The thickness is exemplified by 1 Ομιη. In this Patent Document 1, the use of the enamel resin prevents the soldering of the connection portion of the printed circuit board from being melted and prevented from being ignited. However, even if the material of the fuse element, the heat transfer area, and the like are changed, the fuse characteristics are left free. The problem that degree φ is limited. Further, in Patent Document 2, which is a method of manufacturing a wafer-type fuse, it is described that the temperature rise and the fusing time are determined by the balance between the amount of heat generated by the fuse element and the amount of heat generated by the surrounding member. Moreover, the factor affecting the dissolution time is a factor that resists enthalpy, heat transfer area, heat transfer rate, and resistance to heat generation. Further, heat transfer area and heat transfer rate are factors of heat release. The degree of freedom of the fuse characteristics of the fuse is necessary to review these factors. However, the material and heat transfer area of the structure 200945398 around the fuse element are not specifically reviewed, and the means and method for controlling the heat release from the fuse element to the surrounding member are not disclosed. . [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 9-32086 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei 9-320445 (Problems to be Solved by the Invention) The present invention has been made to solve the above problems. SUMMARY OF THE INVENTION The object is to provide a wafer type fuse and a method of manufacturing the same, and the degree of freedom of the fuse characteristic is not limited, and the fuse time in the higher rate of the constant current can be prevented from being shortened, and the fuse time in the lower rate of the frame current can be shortened. Further, the present invention provides a method of manufacturing a wafer type fuse, which can make the above wafer type fuse excellent in accuracy and relatively easy to form. (Means for Solving the Problem) In the present invention, the above problems are solved by the means (1) to (3) disclosed below. (1) A wafer type fuse in which a first heat storage layer composed of a film material having low thermal conductivity is formed on an insulating substrate, and a fuse film is formed on the first heat storage layer so as not to be in contact with the insulating substrate. The fuse film has a fuse element portion between the electrode portions disposed at both ends, and a second heat storage layer composed of a film material having low thermal conductivity is formed on the fuse element portion, and the first heat storage layer is a ratio The aforementioned second heat storage layer is formed thicker. (2) The wafer type fuse according to the above (1), wherein the first heat storage layer and the second heat storage layer composed of a film material having low thermal conductivity are from a B platform containing a photosensitive group. A sheet-like material in a state (semi-hardened state) is formed. (3) A method of manufacturing a wafer type fuse in which a first heat storage layer is formed on an insulating substrate, a fuse film is formed on the first heat storage layer, and a fuse film is disposed at both ends A fuse element portion is provided between the electrode portions 0, and a second heat storage layer is formed on the fuse element portion, and is characterized in that it includes a sheet-like material in a B-plate state (semi-hardened state) including a photosensitive group and having a substantially uniform thickness. a process of forming a first heat storage layer by stacking a predetermined number on the insulating substrate, and forming a fuse film on the first heat storage layer without forming a contact with the insulating substrate, and forming a fuse element portion between the surface electrode portions, and using a process in which the sheet-like material in the same B-stage state of the first heat storage layer overlaps a predetermined number of the two surface electrode portions to form a second heat storage layer, and 'overlaps' during the formation of the first heat storage layer The number of sheets of the sheet-like material in the B-stage state is more than that in the formation of the second heat-storing layer. In the present invention, the film material having a low thermal conductivity of the first heat storage layer and the second heat storage layer is preferably a film material having a thermal conductivity of about 0.1 to 0.4 W/m ° C. For example, an acrylate resin can be used. A resin material such as an epoxy resin or a sheet-like material containing a photosensitive group is formed. [Effects of the Invention] The wafer-type fuse of the present invention has a heat storage layer composed of a film material of 200945398 having low thermal conductivity, which is disposed above and below the fuse film, and a lower heat storage layer is formed thicker than the heat storage layer of the upper layer. Therefore, the degree of freedom of the fuse characteristic is not limited, and it is possible to prevent the fuse time in the higher rate of the stop current from being shortened' and to shorten the fuse time in the lower rate of the stop current. In other words, when the wafer-type fuse is energized to increase the temperature of the fuse element portion, the heat is transmitted downward and stored in the first heat storage layer, and the heat transmitted upward is stored in the second heat storage layer. . In general, since the thermal conductivity of the insulating substrate is higher than that of air, the first heat storage layer is formed thicker than the second heat storage layer, and heat that escapes from the first heat storage layer to the lower side via the insulating substrate is suppressed. The fuse time can be shortened by blocking the heat in a small lower magnification. Further, by forming the second heat storage layer thinner than the first heat storage layer, the fuse time can be prevented from being shortened by discharging heat at a higher rate of heat. Further, in the method of manufacturing a wafer type fuse according to the present invention, the sheet-like material in the B-platform state in which the almost uniform thickness is formed on the insulating substrate is superimposed by a predetermined number to form the first heat storage layer, and is disposed in the first heat storage layer. On the upper fuse film, the sheet-like material in the same B-plate state is further overlapped by a predetermined number to form a second heat storage layer. Since the thickness of the sheet-like material is uniform, the number of overlaps is adjusted. The first and second heat-storing layers can be formed with a desired thickness with high precision and are relatively easy to form. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. -8- 200945398 Fig. 1 (a) to (d) and Fig. 2 (e) to (h) are plan views showing a process of manufacturing the wafer type fuse 1 of the present invention, and Fig. 3 (a) is a 2 (a), the AA line, and the third (b) is a cross-sectional view of the wafer type fuse 1 中 in the BB line of Fig. 2 (h). The wafer type fuse 1' is a first heat storage layer 12 formed of a film material having low thermal conductivity on the insulating substrate 11, and a fuse film 13 is provided on the first heat storage layer 12, and the fuse film 13 has The electrode element portion 13a disposed at both ends of φ and the fuse element portion 13a connecting the both end portions are formed by a relatively narrow width of the fuse element portion 13b, and a part of the surface electrode portion 13a and the fuse element portion 13b are integrally formed. There is a Ni or Sn plating film or a Sn plating film, and this plating film serves as the fuse portion 14. Further, in the fuse portion 14, a second heat storage layer 15 composed of a film material having a low thermal conductivity is provided in a plurality of wide areas than the fuse portion 14, and a protective layer 16 is formed on the second heat storage layer 15, Both ends of the back surface of the insulating substrate 11 are provided with a back electrode 17'. End surface electrodes 18 are provided on both end faces of the insulating substrate. The electrode plating film 19 is provided so as to cover the surface electrode 13a, the end surface electrode 18, and the back electrode 17. Here, the 'insulating substrate 11 is a film material which uses an alumina substrate and which has a low thermal conductivity which constitutes the first heat storage layer 12 and the second heat storage layer 15 and has a thermal conductivity of about 0.1 to 0.4 w/m 〇 c. Preferably, for example, a predetermined number of resins such as an acrylate resin or an epoxy resin, and a sheet-like material having a photosensitive layer having a thickness of about 3 μm in a B-plate state (semi-hardened state) can be used. For example, in the first heat storage layer 12, the sheet-like material in the B-stage state is overlapped, and the second heat-storing layer 15 is formed by using the sheet material of the same B-stage state in 200945398. A heat storage layer 12 is formed thicker than the second heat storage layer 15. When the resin material such as the acrylate resin or the epoxy resin and the sheet-like material in the B-stage state containing the photosensitive group are cured, the chemical resistance of the etching liquid is excellent, and the thermal conductivity is low. The first heat storage layer 12 is a predetermined portion of the primary partition groove 11a and the secondary dividing groove lib of the insulating substrate 11, and the removed portion 12a of the insulating substrate 11 that is almost completely removed from the first heat storage layer 12 is formed. The shape and arrangement shown in Fig. 1 (b) and (c) form a predetermined elongated length that spans the primary dividing groove 11a and the secondary dividing groove lib. The fuse film 13 is not in contact with the insulating substrate 11, and is laminated on the first heat storage layer 12 in a shape as shown in Fig. 1(d). As described above, by forming the first heat storage layer 12 thicker than the second heat storage layer 15 by, for example, almost twice, the degree of freedom of the fuse characteristics is not limited, and the shortening of the fuse time in the higher rate of the constant current can be prevented, and Shorten the blow time in the lower magnification of the stop current. Next, a method of manufacturing the wafer type fuse 10 of the constant current 1A will be described with reference to Figs. 1 and 2 . In the collective insulating substrate for manufacturing a wafer type fuse, the purity of alumina is an alumina substrate of about 96%. The wafer-type fuse 10 is formed by forming a plurality of layers across a plurality of layers on a collective insulating substrate, and is manufactured by cutting in the longitudinal direction and the lateral direction. However, the integrated insulating substrate is shown in FIG. 1(a) and (b). The plural division, in Figure 1 (c) (d) and 2 (e) to (h), shows a division on the collective insulating substrate, that is, a plan view of the division of a wafer type fuse - 200945398 [Collection In the trench engraving process of the insulating substrate, the primary dividing trench 11a and the secondary dividing trench 11b for cutting are first formed on the collective insulating substrate 11 by means of laser or the like. In the collective insulating substrate, the primary dividing groove 11a and the secondary dividing groove lib are formed in advance, and when such a collective insulating substrate is used, the groove engraving process can be saved. 〔 [Formation Process of First Heat Storage Layer] In order to form the first heat storage layer 12, a predetermined number of sheet-like materials are attached to the collective insulating substrate 11. The sheet-like material is a resin material using an acrylate resin, an epoxy resin or the like, and a B-plate state including a photosensitive group and having a thickness of 30 μm. In the attaching process, one sheet of the sheet-like material in the b-stage state is attached to the collective insulating substrate 11, heated to a predetermined temperature, pressurized by a predetermined pressure, and further, another sheet of the sheet-like material is placed. The pressure is applied and overlapped as described above in the same manner as above. The two sheet-like materials that were heated and pressurized were about 56 μm thick after joining. Thus, the thickness of the first heat storage layer 12 can be adjusted with a high degree of precision by overlapping only a predetermined number of sheets of the sheet-like material in the state of the crucible. Next, after exposing the sheet-like material to ultraviolet light 5 〇〇mJ/em2 through a photomask, immersing it in a sodium carbonate solution at 1 wt% for several minutes to form a sheet-like material as shown in Fig. 1 (b) (c). shape. Thereby, the first heat storage layer 12 from which the removed portion 12a is removed is formed on the insulating substrate 11. -11 - 200945398 s The sheet material is a material containing a photosensitive substrate, and by performing the above process, the dimensional accuracy of the planar shape of the first heat storage layer 12 can be improved, and the fusing characteristics can be reduced. [Formation Process of Fuse Film] An electrolytic copper foil or a rolled copper foil having a thickness of almost 3 μm is attached to the collective insulating substrate 11 on which the first heat storage layer 12 is formed. This attaching process ' is performed by a temperature higher than normal temperature plus a predetermined pressure for a predetermined time. Then, a negative film of a negative type or a liquid protective layer is applied to the electrolytic copper foil, and the electrolytic copper foil is etched to expose the dry film or the liquid protective layer. The fuse film 13 is formed into a planar shape as shown in Fig. 1(d) by the above process. [Formation Process of Fuse Film Fusing Section] The entire fuse element portion 1 3 b of the fuse film 13 and a part of the surface electrode portion 13a continuous with the both sides are set by the electric film method. Ni and Sn plating or Sn plating forms the fuse portion 14 as shown in Fig. 2(e), whereby the fuse film 13 can be given a squeezing effect to obtain a fuse characteristic. [Formation Process of Second Heat Storage Layer] Next, as shown in Fig. 2(f), the second heat storage layer 15 is formed in a range in which the entire fuse portion 14 is covered. The second heat storage layer 15' is also used in the same manner as the first heat storage layer 12, and the sheet-like 200945398 material of the B-plate state having a thickness of about 3 〇Km is attached to one side of the collective insulating substrate 11 It is joined by a predetermined pressure to a predetermined temperature. This sheet-like material has a thickness of about 25 μm after joining. The bonded sheet-like material was exposed to ultraviolet light through a mask, and thereafter, it was immersed in a sodium carbonate solution for several minutes to form a shape as shown in Fig. 1(). Layer 6 Membrane 3 Heat 1 The process reservoir layer is formed into a second material to form the first material shape. The material will be made into a material. 2?, the shirt is *& Τ7 JJJ is layered with a tree guarding system, and the oxygen is dry. The way 'in the protective layer 16 is by screen printing, thereby improving the concealment and mechanical strength. [Formation Process of Back Electrode 'End Surface Electrode, etc.] After the protective layer 16 is formed, silver paste is applied by a screen printing method on the back side of the collective insulating substrate 11 to form a back electrode 17. Then, the collective insulating substrate is cut along the primary dividing groove 11a to form an insulating substrate in the form of a poem (thin rectangular shape), and silver paste is applied to the side surface of the poem-shaped insulating substrate in the longitudinal direction, or The end surface electrode 18 is formed by coating a Cr film and a Ni film by a sputtering method. Further, the poem-shaped insulating substrate is cut along the secondary dividing groove lib to form one wafer shape, and the electrode plating film 19 composed of the Cu film, the Ni film, and the Sn film is sequentially formed by the roll plating method. In the case of Figs. 2(h) and 3, the wafer type fuse 10 of the present invention is completed. Next, Fig. 4 is a graph comparing the characteristics of the fuse of the wafer type fuse of the constant current 1 A of the present invention and the fuse of the wafer type of the comparative example -13-200945398. Fig. 5 is an enlarged graph of the lower range of the freeze current in Fig. 4, and Fig. 6 is an enlarged graph of the higher range of the stop current in Fig. 4. Here, the sample C is an embodiment of the present invention, the first heat storage layer is formed to be almost 60 μm, and the second heat storage layer is formed to be almost 3 μm. On the other hand, the wafer type fuses of the samples A, Β, and D are comparative examples, and the relationship between the relative thicknesses of the first heat storage layer and the second heat storage layer is different from that of the wafer type fuse of the present invention, but other structures are used. It is formed in the same manner as the wafer type fuse of the present invention. The first heat storage layer of the sample A was formed to be almost 30 μm, and the second heat storage layer was formed to be almost 30 μm. The first heat storage layer of Sample B was formed to be almost 30 μm, and the second heat storage layer was formed to be almost 60 μm. Sample D is a first heat storage layer formed by almost 60 μm, and a second heat storage layer is formed by almost 60 μm. Comparing an embodiment of the present invention, that is, sample C, and sample D (the first heat storage layer is the same thickness as sample C), In the range where the standing current is relatively low, as shown in Fig. 5, the melting time of sample C is shorter than that of sample D. On the other hand, in the range where the standing current is relatively high, as in the drawing of Fig. 6, the dissolution time of the sample C is longer than that of the sample D. From this, it is understood that the wafer type fuse of the present invention can prevent the fusing time in the higher rate of the constant current from being shortened and shorten the fusing time in the lower rate of the constant current. [Simple diagram of the drawing] [Fig. 1] (a) to (d) are plan views showing the process of manufacturing a wafer type fuse -14-200945398. [Fig. 2] (e) to (h) are plan views showing the manufacturing process of the first πBeidie 1 diagram. [Fig. 3] (〇 is a cross-sectional view of the Α-Α line of Fig. 2, and (b) is a cross-sectional view taken along line BB of Fig. 2. [Fig. 4] The wafer type fuse of the present invention and a conventional example A graph comparing the melting characteristics. φ [Fig. 5] A graph showing the expansion of the lower magnification range in Fig. 4. [Fig. 6] A graph showing the enlargement of the higher magnification range in Fig. 4. [Main Description of the component symbols: 1 0 : Chip type fuse 1 1 : Collecting insulating substrate 〇 1 1 a : - Sub-dividing groove 1 1 b : Secondary dividing groove 12 : Thermal storage layer 12a : Removal portion 1 3 : Fuse film 13a : Surface electrode Part 1 3 b : Fuse element part 14 : Fuse part 15 : Thermal storage layer -15 - 200945398 16 : Protective layer 17 : Back electrode 1 8 : End surface electrode 19 : Electrode ore film
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