JPH10162714A - Chip fuse element - Google Patents

Chip fuse element

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Publication number
JPH10162714A
JPH10162714A JP31810096A JP31810096A JPH10162714A JP H10162714 A JPH10162714 A JP H10162714A JP 31810096 A JP31810096 A JP 31810096A JP 31810096 A JP31810096 A JP 31810096A JP H10162714 A JPH10162714 A JP H10162714A
Authority
JP
Japan
Prior art keywords
conductor film
fusing
heating
heat
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31810096A
Other languages
Japanese (ja)
Inventor
Masanaga Inagaki
正祥 稲垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP31810096A priority Critical patent/JPH10162714A/en
Publication of JPH10162714A publication Critical patent/JPH10162714A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To stably fuse it by an abnormal current, restrain sensitivity to a rush current, and eliminate a fusing action by laying and forming a heating conductor film heated by abnormal current input and a fusible conductor film fused by heating of the heating conductor film at a melting point lower than this, on an insulating substrate. SOLUTION: Terminal electrodes are arranged on both ends of a cermaic substrate 1 where a glass glaze layer 2 is formed on a main surface, and a heating conductor film 3 using tungsten, molybdenum, silver or the like independently or using a high melting point metallic material of its alloy on the glass glaze layer 2 and a fusible conductor film 4 of a metallic material having a melting point lower than this, are connected in series to each other, and are laid. Selection and a shape of these materials are decided by fuse rating by considering heat conductivity of the glass glaze layer 2. For example, the shape is set so that it does not reach a melting point or more even if it is transmitted to the fusible conductor film 4 by heating of the heating conductor film 3 in a rush current not more than a rated current, and that the fusible conductor film 4 is reliably fused by being transmitted to the fusible conductor film 4 when the heating conductor film 3 is heated in a rated current.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、電源投入時など、
瞬時に発生する大電流(以下、突入電流という)に対し
ては溶断しにくく、1/10〜1秒程度持続する過電流
(以下、異常電流という)に対して安定的に溶断するチ
ップヒューズの構造に関するものである。
BACKGROUND OF THE INVENTION The present invention relates to a method for
Chip fuses that are not easily blown by a large current generated instantaneously (hereinafter referred to as an inrush current) and stably blown by an overcurrent (hereinafter referred to as an abnormal current) lasting about 1/10 to 1 second. It is about structure.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】チップ
ヒューズ素子は、絶縁基板の主面にガラスグレーズ層を
形成し、絶縁基板の長手方向の両端部に端子電極を形成
し、この両端子電極間にアルミニウムなどの金属材料か
らなるヒューズ導体薄膜を被着し、さらに、溶断導体膜
上に保護ガラス層を形成していた。
2. Description of the Related Art In a chip fuse element, a glass glaze layer is formed on a main surface of an insulating substrate, and terminal electrodes are formed on both ends in the longitudinal direction of the insulating substrate. A fuse conductor thin film made of a metal material such as aluminum is applied therebetween, and a protective glass layer is formed on the blown conductor film.

【0003】チップヒューズ素子は、端子電極間に印加
される異常電流によって、ヒューズ導体薄膜が発熱す
る。この時、ガラスグレーズ層はヒューズ導体膜で発熱
された熱が過度に絶縁基板側に逃げないように、熱伝導
率が適宜設定されていた。そして、この発熱によって、
ヒューズ導体薄膜自体が溶断し、ヒューズとして作用す
る。さらに、ヒューズ導体の発熱によって軟化した保護
ガラス膜が充填され、溶断後の高い絶縁性を維持してい
た。
In a chip fuse element, a fuse conductor thin film generates heat due to an abnormal current applied between terminal electrodes. At this time, the thermal conductivity of the glass glaze layer was appropriately set so that the heat generated by the fuse conductor film did not excessively escape to the insulating substrate side. And by this heat,
The fuse conductor thin film itself melts and acts as a fuse. Further, the protective glass film softened by the heat generated by the fuse conductor is filled to maintain a high insulating property after fusing.

【0004】しかし、このような端子電極間のヒューズ
導体薄膜が発熱及び溶断作用を行うチップヒューズ素子
においては、異常電流に対して正常に溶断動作し、且つ
電源投入時に発生する突入電流には溶断動作することが
ないようにすることは、ヒューズ導体薄膜の金属材料、
厚み、導体パターンなどの種々の条件を組み合わせて達
成しなくてはならず、その制御が非常に困難であった。
However, in such a chip fuse element in which the fuse conductor thin film between the terminal electrodes generates heat and blows out, the fuse blows normally with respect to an abnormal current and blows with an inrush current generated when the power is turned on. In order not to work, the metal material of the fuse conductor thin film,
It must be achieved by combining various conditions such as thickness and conductor pattern, and its control is very difficult.

【0005】そこで、本出願人は先に、2つの端子電極
間に、異常電流の入力によって発熱する発熱導体膜と、
該発熱導体膜の融点よりも低い融点の金属材料で形成さ
れ、前記発熱導体膜の発熱によって溶断する溶断導体線
とを直列接続させるとともに、前記溶断導体線を前記発
熱導体膜上に架設させたチップヒューズ素子を提案し
た。
Accordingly, the present applicant has firstly provided a heating conductor film which generates heat by the input of an abnormal current between two terminal electrodes;
A fusing conductor wire formed of a metal material having a melting point lower than the melting point of the heating conductor film and being blown by the heat of the heating conductor film was connected in series, and the fusing conductor wire was laid on the heating conductor film. A chip fuse element was proposed.

【0006】この構造によれば、発熱作用が発生する導
体膜(発熱導体膜)と、溶断作用が発生する導体線(溶
断導体線)とを夫々別々に設けることによって、異常電
流、突入電流に対応する発熱特性を簡単に制御でき、ま
た、この発熱によって溶断する溶断導体の溶断特性も簡
単に制御することができるため、例えば、突入電流に対
しては溶断せず、異常電流に対しては溶断するチップヒ
ューズ素子を構成することが簡単にできる。
[0006] According to this structure, the conductor film (heating conductor film) which generates heat and the conductor wire (fusing conductor wire) which generates fusing action are separately provided, so that abnormal current and inrush current can be reduced. The corresponding heat generation characteristics can be easily controlled, and the fusing characteristics of the fusing conductor that is blown off by this heat generation can be easily controlled. It is possible to easily configure a chip fuse element to be blown.

【0007】しかし、発熱作用が発生する導体膜(発熱
導体膜)と、溶断作用が発生する導体線とを別々に形成
していたとしても、溶断導体は、例えばアルミニウムな
どのワイヤボンディング細線によって構成するために、
組立工程が複雑になってしまうという問題点があった。
However, even if a conductor film that generates heat and a conductor wire that generates a fusing function are separately formed, the fusing conductor is formed by a thin wire bonding wire such as aluminum. To do
There was a problem that the assembly process became complicated.

【0008】本発明は上述の課題に鑑みて案出されたも
のであり、その目的は、異常電流に対しては安定的に溶
断動作し、突入電流に対して感度を低下し、突入電流で
溶断することがない、製造方法、構造が簡略化するチッ
プヒューズ素子を提供するものである。
The present invention has been devised in view of the above-mentioned problems, and has as its object to stably operate a fusing operation for an abnormal current, reduce sensitivity to an inrush current, and reduce the inrush current. An object of the present invention is to provide a chip fuse element that does not melt and has a simplified manufacturing method and structure.

【0009】[0009]

【課題を解決するための手段】本発明によれば、絶縁基
板上に異常電流の入力によって発熱する発熱導体膜と、
該発熱導体膜の融点よりも低い融点の金属材料で形成さ
れ、前記発熱導体膜の発熱によって溶断する溶断導体膜
とを被着形成させるとともに、該発明導体膜及び溶断導
体膜を絶縁基板に設けた2つの端子電極間に直列接続さ
せたことを特徴とするチップヒューズ素子である。
According to the present invention, there is provided a heating conductor film which generates heat by input of an abnormal current on an insulating substrate;
A fusing conductor film formed of a metal material having a melting point lower than the melting point of the heating conductor film, which is blown off by the heat generated by the heating conductor film, is adhered and formed, and the conductor film of the invention and the fusing conductor film are provided on an insulating substrate. And a chip fuse element connected in series between the two terminal electrodes.

【0010】[0010]

【作用】本発明のチップヒューズ素子では、発熱作用が
発生する導体膜(発熱導体膜)と、溶断作用が発生する
導体膜(溶断導体膜)とを直列接続されて構成されてい
る。そして、溶断導体膜の溶断は、発熱導体膜が発熱し
た溶断導体膜の融点以上の熱が、発熱導体膜から溶断導
体膜に、また、基板を伝わって溶断導体膜に達すること
によって溶断することになる。即ち、突入電流のように
非常に短い時間、例えば、0〜0.5μsec間に発生
する電流では、仮に発熱導体膜で発熱しても、その間で
溶断導体膜を溶断するにまで到らないものとなり、それ
以上の時間、例えば0.1〜1secを越えて流れる異
常電流に対しては、発熱導体膜から溶断導体膜へ熱が伝
わり、溶断導体膜を溶断させることができる。従って、
チップヒューズ素子の溶断導体膜での突入電流または異
常電流が発生したから発熱導体膜から伝わる熱による昇
温特性が、下に凸の曲線とすることができる。
In the chip fuse element of the present invention, a conductor film that generates heat (heat-generating conductor film) and a conductor film that generates fusing (fused conductor film) are connected in series. In addition, the fusing of the fusing conductor film is performed by fusing when the heat of the fusing conductor film generated by the heat generating conductor film is higher than the melting point of the fusing conductor film from the heating conductor film to the fusing conductor film and from the substrate to the fusing conductor film. become. That is, in a very short time such as an inrush current, for example, a current generated between 0 and 0.5 μsec, even if heat is generated by the heating conductor film, it does not reach the point where the fusing conductor film is blown during that time. For an abnormal current flowing for a longer time, for example, for more than 0.1 to 1 second, heat is transmitted from the heating conductor film to the fusing conductor film, and the fusing conductor film can be fusing. Therefore,
Since a rush current or an abnormal current has occurred in the blown conductor film of the chip fuse element, the temperature rise characteristic due to the heat transmitted from the heating conductor film can be a downwardly convex curve.

【0011】これによって、突入電流に対しては溶断せ
ず、異常電流に対しては溶断するチップヒューズ素子を
構成することが簡単にできる。
Thus, it is possible to easily configure a chip fuse element that does not blow for an inrush current but blows for an abnormal current.

【0012】また、基板の表面には、発熱導体膜と溶断
導体膜が夫々被着されているため、従来のようにアルミ
ワイヤによるボンディング接合作業が不要となり、発熱
導体膜及び溶断導体膜が一連の薄膜技法を用いて形成す
ることができ、また、発熱導体膜及び溶断導体膜の被覆
が、通常のチップヒューズのように、直接被着できるた
め、製造方法、構造が非常に簡略化することになる。
Further, since the heat-generating conductor film and the fusing conductor film are respectively adhered to the surface of the substrate, the bonding operation using an aluminum wire as in the prior art is not required, and the heat-generating conductor film and the fusing conductor film are formed in series. In addition, the manufacturing method and structure can be greatly simplified because the heating conductor film and the fusing conductor film can be directly covered like a normal chip fuse. become.

【0013】[0013]

【発明の実施の形態】以下、本発明のチップヒューズ素
子を図面に基づいて詳説する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a chip fuse element of the present invention will be described in detail with reference to the drawings.

【0014】図1は本発明の本発明の実施例を説明する
ためのチップヒューズの断面図であり、図2は端子電
極、保護用オーバコート層を省略した状態のチップヒュ
ーズの平面である。図中、1は絶縁基板、2はガラスグ
レーズ層、3は発熱体導体膜、4は溶断導体膜、5、5
は端子電極、6は保護用オーバーコート層である。
FIG. 1 is a sectional view of a chip fuse for explaining an embodiment of the present invention, and FIG. 2 is a plan view of the chip fuse in a state where a terminal electrode and a protective overcoat layer are omitted. In the figure, 1 is an insulating substrate, 2 is a glass glaze layer, 3 is a heating conductor film, 4 is a fusing conductor film, 5, 5
Is a terminal electrode, and 6 is a protective overcoat layer.

【0015】絶縁基板1は、アルミナセラミック基板や
ガラス−セラミック基板などが例示でき、概略直方体形
状を成している。この絶縁基板1の表面には、熱伝導率
を制御するためのガラスグレーズ層2が形成されてい
る。また、絶縁基板1の対向する両端部には、端子電極
5、5が形成されている。 端子電極5、5は、絶縁基
板1に焼きつけによって形成されたAg系下地金属導体
膜、該下地導体膜上に被着されたNiや半田などの表面
メッキ層が積層して構成されている。
The insulating substrate 1 can be exemplified by an alumina ceramic substrate or a glass-ceramic substrate, and has a substantially rectangular parallelepiped shape. On the surface of the insulating substrate 1, a glass glaze layer 2 for controlling thermal conductivity is formed. In addition, terminal electrodes 5 and 5 are formed at opposite ends of the insulating substrate 1. The terminal electrodes 5 and 5 are formed by laminating an Ag-based base metal conductive film formed by baking on the insulating substrate 1 and a surface plating layer such as Ni or solder applied on the base conductive film.

【0016】絶縁基板1の表面で、2つの端子電極5、
5間には、発熱導体膜3及び溶断導体膜4とが被着され
て配置されている。具体的には、絶縁基板1の表面の溶
断導体膜4が被着形成され、その一端部は、電極パッド
3cを介して一方の端子電極5に接続している。また、
溶断導体膜4の他端は、例えば発熱導体膜3の一端部で
もある電極パッド3bが重畳して接続している。また、
発熱導体膜3の他端部である電極パッド3aは他方の端
子電極5に接続している。即ち、端子電極5、5間に、
電極パッド3a、溶断導体膜4、発熱導体膜3(電極パ
ッド3b、3c)が夫々直列的に接続した状態で配置さ
れている。
On the surface of the insulating substrate 1, two terminal electrodes 5,
The heating conductor film 3 and the fusing conductor film 4 are disposed between the five. Specifically, a fusing conductor film 4 on the surface of the insulating substrate 1 is adhered and formed, and one end thereof is connected to one terminal electrode 5 via an electrode pad 3c. Also,
The other end of the fusing conductor film 4 is connected to, for example, an electrode pad 3b which is also one end of the heating conductor film 3 in an overlapping manner. Also,
The electrode pad 3 a, which is the other end of the heating conductor film 3, is connected to the other terminal electrode 5. That is, between the terminal electrodes 5 and 5,
The electrode pad 3a, the fusing conductor film 4, and the heating conductor film 3 (electrode pads 3b, 3c) are arranged in a state of being respectively connected in series.

【0017】ここで、発熱導体膜3は、例えば高融点金
属材料でありるタングステンまたはその合金、モリブデ
ンまたはその合金、Agまたはその合金などからなる。
Here, the heating conductor film 3 is made of, for example, a high melting point metal material such as tungsten or its alloy, molybdenum or its alloy, Ag or its alloy, or the like.

【0018】溶断導体膜4は、その融点が発熱導体膜3
の融点(いずれも960℃以上)に比較して低い材料、
例えばアルミニウムなどからなっている。
The melting conductor film 4 has a melting point of the heating conductor film 3.
A material that is lower than the melting point of
For example, it is made of aluminum or the like.

【0019】いずれの導体膜3、4は、抵抗加熱方法、
スパッタリング法などの薄膜技法を用いて形成される。
また、所定の形状は、マスクを用いたり、フォトリソグ
ラフィ技術でもって達成される。
Each of the conductor films 3 and 4 is formed by a resistance heating method,
It is formed using a thin film technique such as a sputtering method.
Further, the predetermined shape is achieved by using a mask or by a photolithography technique.

【0020】発熱導体膜3、溶断導体膜4の材料の選
択、その形状は、ガラスグレズ層2の熱伝導性を考慮し
て、ヒューズの定格に基づいて種々決定されるものであ
り、例えば、定格電流以下の突入電流では、発熱導体膜
3から発熱して、その熱が溶断導体膜4に伝わっても、
溶断導体膜4の融点以上に達することがなく、また、定
格電流においては、発熱導体膜3から発熱して、その熱
が溶断導体膜4に伝わって確実に溶断導体膜4が溶断す
るように形状を設定すればよい。
The selection of the material of the heating conductor film 3 and the fusing conductor film 4 and the shape thereof are determined variously based on the rating of the fuse in consideration of the thermal conductivity of the glass glaze layer 2. When the inrush current is equal to or less than the current, heat is generated from the heating conductor film 3 and the heat is transmitted to the fusing conductor film 4.
In order not to reach the melting point of the fusing conductor film 4 or more, and at the rated current, heat is generated from the heating conductor film 3 and the heat is transmitted to the fusing conductor film 4 so that the fusing conductor film 4 is surely blown. What is necessary is just to set a shape.

【0021】この発熱導体膜3、溶断導体膜4は、保護
用オーバーコート層6によって被覆されている。保護用
オーバコート層6は、例えば低融点のガラス層とその表
面を覆う耐湿性樹脂層の積層構造となっている。低融点
ガラス層は、発熱導体膜3の発熱作用により軟化し、溶
断導体膜4が溶断した際、その溶断部分にガラス成分が
充填され、溶断後に高い絶縁性を確保するものである。
The heating conductor film 3 and the fusing conductor film 4 are covered with a protective overcoat layer 6. The protective overcoat layer 6 has, for example, a laminated structure of a low melting point glass layer and a moisture resistant resin layer covering the surface thereof. The low-melting-point glass layer is softened by the heat-generating action of the heat-generating conductor film 3, and when the fusing conductor film 4 is blown, the fusing portion is filled with a glass component to ensure high insulation after fusing.

【0022】以上の構成によれば、2つの端子電極5、
5間に正常電流が流れるに当たって、発熱導体膜3、溶
断導体膜4を介して、その電流の流れを許容する。
According to the above configuration, the two terminal electrodes 5,
When a normal current flows between the wires 5, the flow of the current is allowed through the heating conductor film 3 and the fusing conductor film 4.

【0023】また、2つの端子電極5、5間に、電源投
入時に発生する突入電流が流れた時には、発熱導体膜3
での発生時間が例えば0.5μsecと非常に短いた
め、この熱が溶断導体膜4側に伝わったとしても、溶断
導体膜4で溶断発生しえる程度にまで昇温することがな
いため、その電流の流れを許容する。
When a rush current generated when the power is turned on flows between the two terminal electrodes 5, 5, the heating conductor film 3
Is very short, for example, 0.5 μsec, and even if this heat is transmitted to the fusing conductor film 4 side, the temperature does not rise to such an extent that fusing occurs in the fusing conductor film 4. Allow current flow.

【0024】さらに、0.1〜1.0秒程度持続する異
常電流が流れた時には、発熱導体膜3で発熱し、その熱
が溶断導体膜4側に直接伝わり、またガラスグレーズ層
2を介して伝わり、溶断導体膜4の融点以上の温度とな
り、溶断導体膜4で溶断し、その電流の流れが遮断され
ることになる。
Further, when an abnormal current of about 0.1 to 1.0 second flows, heat is generated in the heat generating conductor film 3, and the heat is directly transmitted to the fusing conductor film 4 side, and further, through the glass glaze layer 2. As a result, the temperature becomes equal to or higher than the melting point of the fusing conductor film 4 and the fusing conductor film 4 is blown, whereby the flow of the current is interrupted.

【0025】[0025]

【実施例】本発明者は、上述の構造のチップヒューズ素
子の効果を有限要素法に基づいてその効果を確認すべ
く、実験を行った。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present inventor conducted an experiment in order to confirm the effect of the chip fuse element having the above-described structure based on the finite element method.

【0026】まず、チップヒューズ素子の構造は、幅1.
25mm、長さ2.0mm 、厚さ0.49mmのアルミナセラミックか
ら成る基板1(熱伝導率16W/m ・ K 、比熱0.8J/g・ k 、
密度3.6g/cm3)の表面に、幅1.0mm 、長さ1.3mm 、厚さ
0.013mm のグレーズガラス層2(熱伝導率0.5W/m・ K 、
比熱1.2J/g・ k 、密度4.0g/cm3)を形成し、さらにその
表面に、厚さ10μm のタングステンメタライズからなる
発熱導体膜3を被着形成した。具体的には、基板1の長
手方向の両端と中央の3カ所に、Agなどからなる長手
方向が0.4mm 、幅方向が0.6mm の概略矩形状の電極パッ
ドを形成しておき、中央のパッドと一方のパッドとの間
に幅0.2mm の形状とした。その後、中央のハッドと他方
のパッドとの間に、幅0.2mm 、長さ0.6mm 、厚さ2.7 μ
m のアルミニウムからなる溶断導体膜4をを蒸着形成す
る。これにより、発熱導体膜3と溶断導体膜4とはパッ
ドを介して直列的に接続されることになる。なお、基板
1の表面の両端部のパッドは、基板1の両端部に形成す
る端子電極5、5となる。
First, the structure of the chip fuse element has a width of 1.
A substrate 1 made of alumina ceramic having a thickness of 25 mm, a length of 2.0 mm and a thickness of 0.49 mm (thermal conductivity 16 W / m · K, specific heat 0.8 J / g · k,
On the surface of density 3.6g / cm3), width 1.0mm, length 1.3mm, thickness
Glaze glass layer 2 of 0.013mm (thermal conductivity 0.5W / m · K,
A specific heat of 1.2 J / g · k and a density of 4.0 g / cm 3) were formed, and a heat-generating conductive film 3 made of tungsten metallization having a thickness of 10 μm was formed on the surface thereof. More specifically, a substantially rectangular electrode pad of 0.4 mm in the longitudinal direction and 0.6 mm in the width direction made of Ag or the like is formed at three positions at both ends and the center in the longitudinal direction of the substrate 1. And a pad having a width of 0.2 mm. After that, between the center pad and the other pad, 0.2mm width, 0.6mm length, 2.7μ thickness
Then, a fusing conductor film 4 made of aluminum is formed by vapor deposition. Thus, the heating conductor film 3 and the fusing conductor film 4 are connected in series via the pads. The pads at both ends of the surface of the substrate 1 become the terminal electrodes 5 and 5 formed at both ends of the substrate 1.

【0027】その後、発熱導体膜3、溶断導体膜4上
に、厚さ10μm の低融点のガラスから成る保護オーバー
コート層6を形成する。最後に、基板1の長手方向の両
端部に、両端のパッドに接続するように銀を主成分とす
る端面電極5、5を形成した。
Thereafter, a protective overcoat layer 6 made of low-melting glass having a thickness of 10 μm is formed on the heating conductor film 3 and the fusing conductor film 4. Finally, end face electrodes 5 and 5 mainly composed of silver were formed at both ends in the longitudinal direction of the substrate 1 so as to be connected to pads at both ends.

【0028】上述の構造のチップヒューズ素子の端子電
極5、5間に、電流発生源を用いて、電流値とその持続
時間を0.1秒から2秒まで変えながら、溶断導体膜4
での溶断が発生する条件を求めた。その結果、持続時間
が2秒の場合では2Aで溶断が発生したのに対し、0.
1秒では10Aでも溶断は発生しなかった。
The current fuse and the duration thereof are changed from 0.1 second to 2 seconds by using a current source between the terminal electrodes 5 and 5 of the chip fuse element having the above-described structure.
The conditions under which fusing occurs in the test were determined. As a result, when the duration was 2 seconds, the fusing occurred at 2A, whereas the fusing occurred at 2A.
In 1 second, no fusing occurred even at 10A.

【0029】上述の理由は、有限要素法を用いて非定常
熱伝導解析で明らかとなる。尚、解析にあったて、電流
の計算値は2Aとした。
The above-mentioned reason becomes clear by the transient heat conduction analysis using the finite element method. In the analysis, the calculated value of the current was 2 A.

【0030】その結果、図3に示すように、アルミニウ
ムから成る溶断導体膜4の昇温曲線は、下に凸の曲線を
描くことが理解できる。通常の発熱作用及び溶断作用を
兼ねるヒューズ導体膜を用いた従来のチップヒューズで
は、昇温曲線は、急激に上昇する上に凸の曲線を描き、
突入電流、異常電流に係わらず突発的な大電流が加わっ
た場合には初期に急激に温度が上昇し、溶断が発生する
危険性がある。しかし、上述の構造のように、仮に発熱
導体膜3側で急激に発熱が発生したとしても、熱の伝達
に要する時間などから、溶断導体膜4側では、初期の温
度上昇が緩やかとなり、初期に、瞬時に溶断する可能性
は低いということになる。
As a result, as shown in FIG. 3, it can be understood that the temperature rise curve of the fused conductor film 4 made of aluminum draws a downwardly convex curve. In a conventional chip fuse that uses a fuse conductor film that also serves as a normal heat-generating action and a fusing action, the temperature-rise curve draws a sharply rising and convex curve,
If a sudden large current is applied irrespective of an inrush current or an abnormal current, there is a danger that the temperature will rapidly rise in the initial stage and fusing will occur. However, even if heat is generated abruptly on the heat-generating conductor film 3 side as in the above-described structure, the initial temperature rise becomes gentle on the fusing conductor film 4 side due to the time required for heat transmission and the like. Furthermore, the possibility of instantaneous fusing is low.

【0031】このように、発熱体導体膜3と溶断導体膜
4との間にある距離を置いて配置することにより、電源
投入時などの突入電流に対しては溶断しにくく、且つ1
/10〜1秒程度持続する異常電流に対して安定的に溶
断するチップヒューズとなる。
By arranging the heating conductor film 3 and the fusing conductor film 4 at a certain distance in this manner, it is difficult to blow against an inrush current at the time of turning on the power, and it is possible to reduce the fusing current.
A chip fuse that stably blows against an abnormal current that lasts for about / 10 to 1 second.

【0032】また、構造的に、発熱作用を行う発熱手段
と、溶断作用を行う溶断手段が、夫々絶縁基板1のガラ
スグレーズ層2上に、何れも薄膜技法を用いて発熱導体
膜3及び溶断導体膜4として直接被着形成されている。
このため、発熱導体膜3から溶断導体膜4に伝わる熱の
伝導率の制御が、ガラスグレーズ層の材料、厚みによっ
て制御できるため、チップピューズの定格に合致するチ
ッフヒューズを簡単に達成できる。
Further, structurally, a heat generating means for generating heat and a fusing means for fusing are provided on the glass glaze layer 2 of the insulating substrate 1 by using a thin film technique. The conductive film 4 is directly formed by deposition.
For this reason, the control of the conductivity of the heat transmitted from the heating conductor film 3 to the fusing conductor film 4 can be controlled by the material and thickness of the glass glaze layer, so that a chip fuse that meets the rating of the chip pues can be easily achieved.

【0033】また、これらの発熱導体膜3及び溶断導体
膜4を被覆保護するための低融点ガラス層が、一括的
に、且つ既知の成膜技術を用いて簡単に形成できるた
め、小型、低背で且つ製造方法が簡略化できる。また、
特性的には、溶断導体膜4の溶断によって形成される溶
断溝部分に低融点ガラス成分が充填されることになるた
め、溶断後、安定した絶縁特性が得られ、スパークなど
が発生することがなく、さらに、例えば溶断導体膜4の
アルミニウムの酸化などの変質が少なく、安定した特性
を長期に維持できる実用性の高いチップヒューズ素子と
なる。
Further, since a low-melting glass layer for covering and protecting the heating conductor film 3 and the fusing conductor film 4 can be formed collectively and easily by using a known film-forming technique, the size and the size of the low-melting glass layer can be reduced. The height and the manufacturing method can be simplified. Also,
In terms of characteristics, the fusing groove formed by fusing of the fusing conductor film 4 is filled with the low-melting glass component, so that after fusing, stable insulating properties are obtained and sparks and the like may occur. In addition, for example, there is little alteration such as oxidation of aluminum of the fused conductor film 4 and a highly practical chip fuse element capable of maintaining stable characteristics for a long period of time.

【0034】[0034]

【発明の効果】以上のように、本発明によれば、電源投
入時の突入電流に対して、感度が鈍く、また、所定時間
以上持続する異常電流に対して、安定的に遮断し得るチ
ップヒューズ素子となり、しかも、溶断導体膜の昇温制
御が比較的容易に行え、小型低背で、特性が安定した実
用性の高いチップヒューズ素子となる。
As described above, according to the present invention, a chip which has a low sensitivity to an inrush current when the power is turned on and can stably cut off an abnormal current which lasts for a predetermined time or more. It becomes a fuse element, and furthermore, it becomes a highly practical chip fuse element having a small size, a low profile, stable characteristics, and stable characteristics, in which the temperature rise control of the fusing conductor film can be performed relatively easily.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のチップヒューズ素子の断面図である。FIG. 1 is a sectional view of a chip fuse element of the present invention.

【図2】本発明のチップヒューズ素子の部分平面面図で
ある。
FIG. 2 is a partial plan view of the chip fuse element of the present invention.

【図3】本発明の溶断導体膜の温度上昇特性を有限要素
法解析により求めた特性図である。
FIG. 3 is a characteristic diagram showing a temperature rise characteristic of a fused conductor film of the present invention obtained by a finite element analysis.

【符号の説明】[Explanation of symbols]

1・・・セラミック基板 2・・・ガラスグレーズ層 3・・・発熱導体膜 4・・・溶断導体膜 5・・・端子電極 6・・・保護用オーバーコート層 DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Glass glaze layer 3 ... Heat generation conductor film 4 ... Fusing conductor film 5 ... Terminal electrode 6 ... Protection overcoat layer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】絶縁基板上に異常電流の入力によって発熱
する発熱導体膜と、該発熱導体膜の融点よりも低い融点
の金属材料で形成され、前記発熱導体膜の発熱によって
溶断する溶断導体膜とを被着形成させるとともに、該発
明導体膜及び溶断導体膜を絶縁基板に設けた2つの端子
電極間に直列接続させたことを特徴とするチップヒュー
ズ素子。
1. A heat-generating conductor film that generates heat by the input of an abnormal current on an insulating substrate, and a fusing conductor film that is formed of a metal material having a melting point lower than the melting point of the heat-generating conductor film, and is blown by the heat generation of the heat-generating conductor film. Wherein the conductor film and the fusing conductor film of the present invention are connected in series between two terminal electrodes provided on an insulating substrate.
JP31810096A 1996-11-28 1996-11-28 Chip fuse element Pending JPH10162714A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31810096A JPH10162714A (en) 1996-11-28 1996-11-28 Chip fuse element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31810096A JPH10162714A (en) 1996-11-28 1996-11-28 Chip fuse element

Publications (1)

Publication Number Publication Date
JPH10162714A true JPH10162714A (en) 1998-06-19

Family

ID=18095496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31810096A Pending JPH10162714A (en) 1996-11-28 1996-11-28 Chip fuse element

Country Status (1)

Country Link
JP (1) JPH10162714A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7286037B2 (en) * 2002-12-27 2007-10-23 Sony Corporation Protective element
JP2009193927A (en) * 2008-02-18 2009-08-27 Kamaya Denki Kk Chip fuse and its manufacturing method
WO2011126091A1 (en) * 2010-04-08 2011-10-13 ソニーケミカル&インフォメーションデバイス株式会社 Protection element, battery control device, and battery pack

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7286037B2 (en) * 2002-12-27 2007-10-23 Sony Corporation Protective element
JP2009193927A (en) * 2008-02-18 2009-08-27 Kamaya Denki Kk Chip fuse and its manufacturing method
JP4612066B2 (en) * 2008-02-18 2011-01-12 釜屋電機株式会社 Chip fuse and manufacturing method thereof
WO2011126091A1 (en) * 2010-04-08 2011-10-13 ソニーケミカル&インフォメーションデバイス株式会社 Protection element, battery control device, and battery pack
JP2011222264A (en) * 2010-04-08 2011-11-04 Sony Chemical & Information Device Corp Protection element, battery controller, and battery pack
US9184609B2 (en) 2010-04-08 2015-11-10 Dexerials Corporation Overcurrent and overvoltage protecting fuse for battery pack with electrodes on either side of an insulated substrate connected by through-holes

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