WO2009103283A1 - Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement - Google Patents
Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement Download PDFInfo
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- WO2009103283A1 WO2009103283A1 PCT/DE2009/000249 DE2009000249W WO2009103283A1 WO 2009103283 A1 WO2009103283 A1 WO 2009103283A1 DE 2009000249 W DE2009000249 W DE 2009000249W WO 2009103283 A1 WO2009103283 A1 WO 2009103283A1
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- radiation
- separation
- intermediate layer
- carrier layer
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000005855 radiation Effects 0.000 title abstract description 6
- 238000000926 separation method Methods 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims description 62
- 238000004382 potting Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 27
- 229920001296 polysiloxane Polymers 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920002050 silicone resin Polymers 0.000 claims description 2
- 230000001427 coherent effect Effects 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 198
- 235000019589 hardness Nutrition 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- a method for producing a plurality of radiation-emitting components and a radiation-emitting component are specified.
- Specify radiation-emitting components Furthermore, it is an object of at least one embodiment to specify a radiation-emitting component.
- a method for producing a plurality of radiation-emitting components comprises the method steps:
- first layer, a first region or a first device is arranged or applied "on" a second layer, a second region or a second device can mean here and below that the first layer, the first region or the first one Device directly in direct mechanical and / or electrical contact on the second layer, the second region or the second device or to the two other layers, areas or devices is arranged or applied.
- an indirect contact can also be designated, in which further layers, regions and / or devices are arranged between the first layer, the first region or the first device and the second layer, the second region or the second device or the two further layers, regions or devices are arranged.
- Separatation means a change in shape of a layer or a region in which the cohesion is locally canceled, or a parting of a layer or of a region in the case of a separation, a severing or a separation
- the separation, cutting or separation may be non-mechanical or mechanical, such as by dicing, chipping or abrading, and may mean altering the shape of a layer or region having cutting tools suitable for cutting, machining or abrading.
- the radiation-emitting components that can be produced in the context of the method described here can have an improved separability of the individual radiation-emitting components from one another in comparison with known production methods of radiation-emitting components.
- the separability of at least two radiation-emitting components can be qualitatively improved by arranging an intermediate layer in the separation region between two radiation-emitting components on the carrier layer.
- Each of the separation areas is arranged separately from and / or adjacent to intermediate mounting areas, which each have the radiation-emitting devices of the radiation-emitting components.
- the potting layer applied to the radiation-emitting devices may differ in physical properties such as hardness, stiffness, strength, ductility, fracture toughness or density from the carrier layer due to the material composition, so that it is necessary to use the at least two radiation-emitting devices with two separation steps and to separate two different separating tools.
- a direct transition from the potting layer to the carrier layer in, for example, different hardnesses of these layers may result in the separation tool, which is suitable for separating the potting layer, being damaged and becoming inoperative when it strikes the carrier layer.
- the loss of function of the separating tool can be prevented by arranging in the separating region between two radiation-emitting components the intermediate layer between the carrier layer and the casting layer, which is separated from both a separating tool used for the separation of the carrier layer and a separating tool the potting layer is suitable, can be cut through and thus serves as a buffer or protective layer.
- the separation in the first separation step and in the second separation step may each be performed with a saw.
- This may mean that the process steps E) and F) can be carried out completely with a saw as the only cutting tool.
- the saw can be used as an example of a cutting cutting tool to separate the carrier layer, the intermediate layer and the potting layer with their physically different properties.
- the use of a saw as a mechanical parting tool enables a cost-effective production of a plurality of radiation-emitting components in a high volume production.
- the separation according to the first separation step can be carried out with a first saw blade.
- a first saw blade can be used which can sever both the potting layer and the intermediate layer.
- the first saw blade is particularly suitable for severing the potting layer, wherein the potting layer is completely severed during the first separation step.
- the potting layer can not be completely severed with a saw blade during the first separation step, since a small part of the potting layer must be retained as a protective layer to prevent the saw blade from hitting the backing layer and damaging the saw blade.
- the small part of the remaining potting layer proves to be detrimental to the second separation step, since residues of the potting layer can attach to the separation edge and can dissolve in the further processing of the radiation-emitting component. This leads to contamination in known production processes the radiation-emitting components, which requires the cleaning of the radiation-emitting components in an additional purification step.
- the residues of the potting layer during the second sawing step can also be deposited on the saw blade in known methods, which leads to a deterioration of the sawing result due to progressive dulling of the saw blade.
- the saw blade may have diamond grains which are embedded in a plastic matrix, in a metal matrix or alternatively in a ceramic matrix and still have sufficient sharpness at the beginning of sawing. During sawing, truncated diamond grains may break out of the plastic matrix exposing new, sharp diamond grains. By adding the remainders of the potting layer to the new, sharp diamond grains in known production methods, the saw blade can blunt progressively.
- the second separation step may be performed according to another embodiment with a second saw blade, which is different from the first saw blade.
- the second saw blade also partially cuts through the intermediate layer and completely cuts through the carrier layer. This means that both the first saw blade and the second saw blade are the intermediate layer can cut without, for example, the first saw blade is damaged by hitting the support layer.
- first and the second saw blade may have the same thickness.
- first and the second saw blade each have a thickness of 50 microns to 350 microns.
- At least one electrical contact layer can be applied in each case before the method step C) in the majority of the mounting regions of the carrier layer.
- the at least one electrical contact layer of the electrical contacting of the radiation-emitting device is used from the side of the carrier layer and may, for example, be formed as a conductor track on the carrier layer.
- the radiation-emitting devices can each have, for example, an electrode facing the carrier layer, with which the radiation-emitting devices can each be applied to the at least one electrical contact layer in the mounting areas.
- the radiation-emitting devices can be provided, for example, with an electrode facing away from the carrier layer, which can be electrically connected to one of the at least one electrical contact layer, for example via a bonding wire.
- the radiation-emitting devices by means of the known so-called flip-chip contacting on at least two electrical Conductor tracks are electrically connected in the mounting areas.
- the at least one electrical contact layer can have the same material or be made of the same material as the intermediate layer. Characterized in that the intermediate layer may comprise the same material as the at least one electrical contact layer, for example copper, nickel, silver, tungsten, molybdenum or gold or alloys or mixtures with the described metals in a variable percentage ratio or a layer sequence with said materials,
- the at least one electrical contact layer and the intermediate layer can be applied simultaneously in method step B).
- the carrier layer may have a first hardness, the intermediate layer a second hardness and the potting layer a third hardness, wherein the first hardness may be greater than the second hardness and the second hardness may be greater than the third hardness.
- the potting layer may have a lower hardness compared to the intermediate layer, wherein the intermediate layer may again have a lower hardness than the carrier layer.
- the materials which are used for the carrier layer and comprise, for example, a ceramic material, a semiconductor material such as, for example, silicon or metals, which may furthermore also be oxidized on the surface, or a plastic may be characterized by a high degree of hardness.
- the ceramic material for example, aluminum nitride (AlN) and / or aluminum oxide (Al 2 O 3 ) have or be of such compounds.
- at least one photoresist, a solder resist or a metal may be used for the intermediate layer, wherein the metal may be selected from at least one of copper, gold, silver, tungsten, molybdenum and nickel and alloys and mixtures and layer sequences thereof.
- Such metals may have a lower hardness than the carrier layer and thus be softer than the carrier layer.
- Such materials also make it equally possible that the intermediate layer can be severed not only with the first saw blade, which is optimized for the cutting of the casting layer with the comparatively lowest hardness, but also with the second saw blade, which is for the cutting of the carrier layer with the comparatively highest hardness is suitable.
- the potting layer may comprise silicone, which is for example selected from methyl-based, phenyl-based and / or fluorinated silicone.
- silicone which is for example selected from methyl-based, phenyl-based and / or fluorinated silicone.
- silicones can be distinguished by the fact that they are particularly impermeable to air and in particular oxygen and to moisture and are also UV-resistant.
- Silicones in that they allow operation of radiation-emitting devices at high temperatures, also for example, to about 150 0 C.
- a potting with silicones enables the molding of an optical element out of the cast layer, such as a Lens, which may be arranged as part of the potting layer preferably directly above the radiation-emitting device in the radiation-emitting component.
- Methyl-based silicones having a Shore hardness of Shore A60 to Shore A90 are preferably used in the potting layer, particularly preferably methyl-based silicones with a Shore hardness of Shore A70 to Shore A80 are used, which have a high material stability.
- At least the separating regions of the carrier layer have a waviness which is planarized by the application of the intermediate layer in process step B).
- the waviness of the carrier layer can be determined, for example, by a scanning method, a dynamic pressure method, or by an optical method.
- the waviness of the carrier layer at 5 to 10 points of the carrier layer can be determined by a scanning method.
- the intermediate layer can first material the intermediate layer, which may be liquid, for example, penetrate into the bumps and eliminate the waviness.
- the intermediate layer can preferably be applied with a layer thickness which is greater than or at least equal to the greatest possible waviness of the carrier layer.
- an intermediate layer is applied with a layer thickness which extends by 5 to 50 microns and preferably by 5 to 20 microns above the maximum ripple peaks of the waviness of the support layer.
- the application of the intermediate layer can take place photochemically.
- the carrier layer according to a further embodiment in method step A) can be provided on a foil.
- the carrier layer can be glued to the film and thereby laminated, for example.
- the film may allow the support layer to rest on a nearly flat surface and include materials such as polyvinyl chloride (PVC), polyethylene terephthalate (PET), polyethylene (PE) or polyolefin (PO).
- PVC polyvinyl chloride
- PET polyethylene terephthalate
- PE polyethylene
- PO polyolefin
- the intermediate layer, the plurality of radiation-emitting devices and the potting layer can subsequently be carried out in process steps B), C) and D) on a surface of the carrier layer opposite the film.
- the film can be at least partially severed in the second separation step in method step F), which favors that the created level can be maintained in the further manufacturing process.
- a potting layer on the radiation-emitting device, wherein an intermediate layer is arranged adjacent to the mounting area between the carrier layer and the potting layer.
- the potting layer is arranged or applied "on" the radiation-emitting device can here and below mean that the potting layer is arranged or applied directly in direct mechanical contact with the radiation-emitting device further layers are arranged between the potting layer and the radiation-emitting device.
- An "adjacent" arrangement of the intermediate layer to the mounting area between the carrier layer and the encapsulation layer may here and in the following mean that the intermediate layer can be arranged in direct contact with the mounting area so that the intermediate layer and the mounting area directly adjoin one another be designated, in which further layers or areas are arranged between the mounting area and the intermediate layer.
- Such a radiation-emitting component can be embodied as a semiconductor component, preferably as a light-emitting diode chip or as a laser diode chip.
- Such a radiation-emitting device may be mounted on surfaces such as printed circuit boards by a surface mount technique.
- a surface mount technique As a result, a very dense assembly, especially a two-sided assembly of the circuit board is possible.
- Such a radiation-emitting component can furthermore achieve the JEDEC-I standard, which may mean that such a radiation-emitting component does not have to be packaged and stored in a so-called "dry pack" for protection against penetrating moisture and oxidation damage, but in the environment As a result, the accumulation of moisture in the radiation-emitting component can be largely avoided, so that soldering the radiation-emitting components arranged, for example, on conductor tracks in the reflow process does not lead to cracks in the radiation-emitting component and delamination of the layers of the radiation-emitting component (see above) called "popcorning effect").
- the intermediate layer may surround the mounting area. This may mean that the mounting area is limited on at least two surfaces by the intermediate layer. Furthermore, this may mean that the radiation emitting element arranged in the mounting region Device is surrounded on at least two surfaces of the intermediate layer.
- the region in which the intermediate layer surrounds the radiation-emitting device may also be referred to as a separation region.
- At least one electrical contact layer can be applied at least in the mounting region of the carrier layer.
- the at least one electrical contact layer of the electrical AnARM michtechnik the radiation-emitting device is used from below and may be formed as a lower electrode, for example as a conductor.
- Forturaêt the radiation-emitting device may be provided with an upper electrode, which may for example comprise a bonding wire.
- the radiation-emitting component may furthermore have one or more features as already described above, such as the material of the electrical contact layer, the different hardnesses of the layers and / or the materials used to form the respective layers.
- FIGS. 2A and 2B show individual method steps of a method according to a further exemplary embodiment.
- FIG. 1A shows a schematic sectional representation of a method step A), in which a carrier layer 1 is provided which has a plurality of mounting regions 2.
- the mounting areas 2 are separated from each other by separation areas 3.
- the separation areas 3 and the mounting areas 2 can be arranged, for example, in separate columns and rows.
- the mounting areas 2 are arranged in a matrix form on the carrier layer 1 with separating areas 3 arranged therebetween in columns and rows.
- the material for the carrier layer 1 are preferably a ceramic material, a semiconductor material such as silicon or metals, which may be oxidized, for example, on the surface or a plastic material used as it characterized by a high hardness and low material costs. In this case, depending on which material is used for the carrier layer, the carrier layer has a waviness of 5 to 50 ⁇ m.
- FIG. 1B shows a schematic sectional illustration of a further method step B), in which an intermediate layer 4 is applied to the separating regions 3 of the carrier layer 1.
- the materials used for the intermediate layer are a photoresist, a solder resist, or a metal such as nickel, copper, silver, tungsten, molybdenum or gold or a mixture or alloy of the metals in varying percentage proportions or a layer sequence with the materials mentioned.
- the intermediate layer is planarized.
- a layer thickness of the intermediate layer 4 is preferred which is at least equal to, but preferably greater than, the greatest possible waviness of the carrier layer 1 in the separation regions 3. The greatest possible waviness was previously determined at 5 to 10 points on the surface of the carrier layer 1 in the separating regions 3, for example by a scanning method.
- FIG. 1C shows a schematic sectional illustration of a method step C), in which a radiation-emitting device 5 is applied to each of the plurality of mounting regions 2.
- each of the radiation-emitting devices 5 can adjoin directly to the adjacent separating regions 3 or, as shown here, can be arranged spaced apart from adjacent separating regions 3 in the mounting region 2 on the carrier layer 1.
- at least one electrical contact layer 10 as shown in Figures 2A and 2B, apply prior to step C).
- the material of the electrical contact layer 10 and the intermediate layer 4 may have the same material or be of the same material. In that case, it is possible to apply the electrical contact layer 10 and the intermediate layer 4 in a structured manner to the mounting regions 2 or to the separating regions 3 in one process step.
- FIG. 1D shows a schematic sectional illustration of a method step D) in which a continuous encapsulation layer 6 is applied over a large area onto the radiation-emitting devices 5 and the intermediate layer 4.
- the potting layer 6 may preferably contain methyl-based or phenyl-based silicone from which a lens can be formed.
- the potting layer 6 is therefore preferably arranged on the radiation-emitting device 5 so that the lens of the potting layer 6 rests directly on the radiation-emitting device 5.
- FIG. 1C shows a schematic sectional view of a method step E), in which, in a first separation step 7, the potting layer 6 is completely severed and the intermediate layer 4 is partially severed.
- the course of the first separating cut 7 is shown by dashed arrows 7. Because a complete separation of the potting layer 6 takes place in this first separation step 7, smooth saw edges can be produced without overhangs of the potting layer 6.
- Figure IF shows a schematic sectional view of a process step F), in which the intermediate layer 4 partially and the carrier layer 1 are completely cut through in a second separation step 8 (dashed arrows). In this case, the intermediate layer 4 is completely severed by the first separation step 7 shown in FIG. IE) and by the second separation step 8 shown in FIG.
- a plurality of radiation-emitting components whose separation is possible, for example, with a saw.
- two different saw blades can be used, wherein the saw blade used for the first separation step 7 is optimized for the complete separation of the potting layer 6, while the second saw blade for the second separation step 8 is suitable for separating the carrier layer 1.
- the intermediate layer 4 preferably has a material such as a photoresist, a solder resist or a material such as copper, nickel, silver, tungsten, molybdenum or gold, or a mixture or an alloy or a layer sequence thereof, so that the intermediate layer 4 not only with a saw blade can be cut, which is optimized for the severing of the potting layer 6 with the comparatively lowest hardness, but also with a saw blade, which is suitable for the severing of the carrier layer 1 with the comparatively largest hardness.
- a material such as a photoresist, a solder resist or a material such as copper, nickel, silver, tungsten, molybdenum or gold, or a mixture or an alloy or a layer sequence thereof, so that the intermediate layer 4 not only with a saw blade can be cut, which is optimized for the severing of the potting layer 6 with the comparatively lowest hardness, but also with a saw blade, which is suitable for the severing of the carrier layer 1 with the
- FIGS. 2A and 2B show individual method steps of a method for producing radiation-emitting components according to a further exemplary embodiment.
- the carrier layer 1 is provided arranged on a foil 9 in order to carry out the separating steps 7 and 8 illustrated in FIGS. IE and IF on a surface which is as flat as possible.
- the film 9, as shown in a schematic sectional view in FIG. 2A, is only partially severed during the second separation step 8 according to method step F).
- the radiation-emitting devices 5 are arranged on electrical contact layers 10, wherein the electrical contact layers 10 are applied to the carrier layer 1 in the mounting areas 2 prior to the application of the radiation-emitting devices 5 in the method step C) described above.
- the radiation-emitting devices 5 are applied by means of a flip-chip mounting.
- the invention is not limited by the description based on the embodiments of these. Rather, it includes the invention includes any novel feature as well as any combination of features, in particular any combination of features in the patent claims, even if these features or this combination of features themselves are not explicitly stated in the patent claims or exemplary embodiments.
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801060204A CN101946339B (zh) | 2008-02-22 | 2009-02-19 | 用于制造多个发射辐射的器件的方法以及发射辐射的器件 |
US12/918,364 US8790939B2 (en) | 2008-02-22 | 2009-02-19 | Method for producing a plurality of radiation-emitting components and radiation-emitting component |
KR1020107020192A KR101525638B1 (ko) | 2008-02-22 | 2009-02-19 | 복수 개의 복사 방출 소자들 제조 방법 및 복사 방출 소자 |
EP09712047.1A EP2255396B1 (de) | 2008-02-22 | 2009-02-19 | Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen |
JP2010547042A JP5579080B2 (ja) | 2008-02-22 | 2009-02-19 | 複数のビーム放射構成素子を作製する方法およびビーム放射構成素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102008010510.4 | 2008-02-22 | ||
DE102008010510 | 2008-02-22 | ||
DE102008014927A DE102008014927A1 (de) | 2008-02-22 | 2008-03-19 | Verfahren zur Herstellung einer Mehrzahl von strahlungsemittierenden Bauelementen und strahlungsemittierendes Bauelement |
DE102008014927.6 | 2008-03-19 |
Publications (1)
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WO2009103283A1 true WO2009103283A1 (de) | 2009-08-27 |
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PCT/DE2009/000249 WO2009103283A1 (de) | 2008-02-22 | 2009-02-19 | Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement |
Country Status (8)
Country | Link |
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US (1) | US8790939B2 (de) |
EP (1) | EP2255396B1 (de) |
JP (1) | JP5579080B2 (de) |
KR (1) | KR101525638B1 (de) |
CN (1) | CN101946339B (de) |
DE (1) | DE102008014927A1 (de) |
TW (1) | TW200947765A (de) |
WO (1) | WO2009103283A1 (de) |
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DE102012008637A1 (de) | 2012-05-02 | 2013-11-07 | Heraeus Noblelight Gmbh | Optisches Modul mit Ausformung zur Montage |
DE102012025826B3 (de) * | 2012-05-02 | 2020-09-24 | Heraeus Noblelight Gmbh | Optisches Modul mit Ausformung zur Montage |
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Also Published As
Publication number | Publication date |
---|---|
JP5579080B2 (ja) | 2014-08-27 |
US20110127564A1 (en) | 2011-06-02 |
CN101946339B (zh) | 2012-08-29 |
JP2011512683A (ja) | 2011-04-21 |
EP2255396B1 (de) | 2018-08-29 |
US8790939B2 (en) | 2014-07-29 |
EP2255396A1 (de) | 2010-12-01 |
CN101946339A (zh) | 2011-01-12 |
KR101525638B1 (ko) | 2015-06-03 |
DE102008014927A1 (de) | 2009-08-27 |
KR20100127220A (ko) | 2010-12-03 |
TW200947765A (en) | 2009-11-16 |
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