WO2009089794A1 - Plasma processing equipment and gas distribution apparatus thereof - Google Patents

Plasma processing equipment and gas distribution apparatus thereof Download PDF

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Publication number
WO2009089794A1
WO2009089794A1 PCT/CN2009/070091 CN2009070091W WO2009089794A1 WO 2009089794 A1 WO2009089794 A1 WO 2009089794A1 CN 2009070091 W CN2009070091 W CN 2009070091W WO 2009089794 A1 WO2009089794 A1 WO 2009089794A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas distribution
distribution plate
circumferential
radial
venting groove
Prior art date
Application number
PCT/CN2009/070091
Other languages
English (en)
French (fr)
Inventor
Liqiang Yao
Original Assignee
Beijing Nmc Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co., Ltd. filed Critical Beijing Nmc Co., Ltd.
Priority to JP2010541014A priority Critical patent/JP5184649B2/ja
Priority to US12/811,991 priority patent/US8888949B2/en
Publication of WO2009089794A1 publication Critical patent/WO2009089794A1/zh
Priority to US14/339,243 priority patent/US9540732B2/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention relates to the field of microelectronics, and more particularly to a gas distribution device for use in a plasma processing apparatus.
  • the invention further relates to a plasma processing apparatus comprising the above gas distribution device. Background technique
  • Plasma processing equipment is widely used in the field of microelectronics technology.
  • FIG. 1 is a schematic structural diagram of a plasma processing apparatus which is currently common.
  • the plasma processing apparatus 1 generally includes a housing 11 having a reaction chamber 12 therein, and a top plate and a bottom portion of the reaction chamber 12 are respectively provided with an upper plate 13 and a lower plate 14.
  • the upper plate 13 and the casing 11 are separated by an insulating member 15; the top of the lower plate 14 can support the workpiece to be processed.
  • the above-mentioned workpieces should include wafers and other workpieces having the same processing principles. The meaning of the machined parts described below is the same.
  • a vacuum obtaining means such as a dry pump is used to manufacture and maintain a state close to a vacuum in the reaction chamber 12.
  • the process gas is introduced into the reaction chamber 12 through the gas distribution device 16, and an appropriate radio frequency is input between the upper plate 13 and the lower plate 14, thereby activating the process gas, and further in the workpiece.
  • the surface creates and maintains a plasma environment. Due to the strong etching and deposition capabilities, the plasma can be etched or deposited in a physical chemical reaction with the workpiece to obtain the desired etch pattern or deposited layer.
  • the by-product of the above physical chemical reaction is withdrawn from the reaction chamber 12 by the vacuum obtaining means.
  • the degree of uniformity of the process gas distribution on the surface of the above-mentioned workpieces is of great significance to the quality of the workpiece.
  • the cross-sectional area of the reaction chamber 12 becomes larger and larger, and it becomes more and more difficult to realize the uniform distribution of the process gas therein.
  • the degree of uniformity of the above process gas distribution is related to various factors, wherein the structure of the gas distribution device largely determines the uniformity of the distribution of the process gas in the reaction chamber.
  • FIG. 2 is a schematic structural view of a gas distribution device which is currently common.
  • the conventional gas distribution device 2 comprises a substantially circular support plate 21 which is located at the center of the top of the reaction chamber of the plasma processing apparatus and is fixedly connected to the upper plate in a conventional manner. Air intake hole 211.
  • a nozzle electrode 23 that is substantially circular and coaxial with the support plate 21 is fixedly connected to the lower side of the support plate 21, and the connection portions of the two are kept hermetically sealed (here and below are sealed, both refer to a result, not a means; That is, no matter what specific technical means are used, no gas leakage phenomenon should occur in the connection portion between the support plate 21 and the shower head electrode 23, and a gas distribution chamber is formed therebetween.
  • the intake port 211 is in communication with the gas distribution chamber.
  • the gas distribution chamber is provided with a plurality of spoilers 22 in a conventional manner, between each layer of the spoilers 22, and a proper distance between the spoiler 22 and the support plate 21 and the showerhead electrode 23, thereby
  • the gas distribution chamber is isolated from top to bottom into a number of small chambers.
  • the spoiler 22 includes a plurality of gas passages 221 that extend axially therethrough to communicate the respective small chambers.
  • the process gas is forced to generate a certain lateral displacement when passing through the spoiler 22, so that the radial uniformity can be increased; As the number of layers of 22 increases, the number of lateral displacements of the process gas also increases, so that the radial uniformity of the process gas obtained at the upper surface 232 of the showerhead electrode 23 is also continuously increased.
  • a plurality of vent holes 231 are disposed in the showerhead electrode 23 for communicating with the lowermost chamber of the gas distribution chamber and the reaction chamber below the showerhead electrode 23.
  • a relatively uniform process gas at the upper surface 232 of the showerhead electrode 23 can flow from the vent 231 into the reaction chamber of the plasma processing apparatus.
  • the gas distribution device forcibly forces the process gas to laterally shift by the obstruction of the baffle 22, and thereby the radial uniformity thereof is increased; therefore, in order to obtain a high lateral uniformity, It is necessary to provide a plurality of layers of the spoiler 22. This will result in the above gas
  • the structure of the device is too complicated, the volume is large, and the processing cost is high; and reducing the number of the baffles 22 reduces the uniformity of the distribution of the process gas.
  • the present invention provides a gas distribution device for a plasma processing apparatus, comprising a horizontally disposed support plate fixedly connected to an electrode of the plasma processing apparatus, the central portion having a first intake passage a lower surface of the support plate is fixedly connected to the nozzle electrode parallel thereto, and a first gas distribution plate having a plurality of axial through holes is horizontally disposed in a cavity between the two; a center of the first gas distribution plate a portion corresponding to a central portion of the support plate; a top surface of the first gas distribution plate is provided with at least one circumferential venting groove surrounding a central position thereof, and a plurality of paths communicating with the circumferential venting groove a venting groove; the axial through hole is disposed in the circumferential venting groove and the radial venting groove.
  • the radial venting grooves are uniformly distributed and their width gradually decreases outward in the radial direction of the first gas distribution plate.
  • the minimum cross-sectional area of each axial through hole in the same circumferential venting groove is equal; the minimum cross-sectional area of each axial through hole in the same radial venting groove is along the radial direction of the first gas distribution plate Gradually increase outward.
  • the density of the axial through holes in the same radial venting groove gradually increases outward in the radial direction of the first gas distributing plate.
  • the first gas distribution plate comprises a plurality of circumferential venting grooves, and the circumferential venting grooves The width increases sequentially outward in the radial direction of the first gas distribution plate.
  • the support plate further includes a second intake passage offset from a central portion thereof, the second intake passage being spaced from the first intake passage by a distance greater than a radius of the first gas distribution plate;
  • the cavity between the support plate and the showerhead electrode further includes a second gas distribution plate, the second gas distribution plate closely surrounding the first gas distribution plate, and the cavity at the top of the two is separated by a sealing ring;
  • the second gas distribution plate includes at least one circumferential venting groove, and a plurality of radial venting grooves communicating with the circumferential venting groove, wherein the plurality of circumferential venting grooves and the radial venting grooves are provided Axial through hole.
  • the second intake passage corresponds to a circumferential venting groove of the second gas distribution plate.
  • the width of the circumferential venting groove corresponding to the second intake passage is tapered in the direction of the air flow.
  • the width of the radial venting groove in the second gas distribution plate gradually increases outward in the radial direction of the second gas distribution plate.
  • the most of the axial through holes of the same radial venting groove in the second gas distribution plate is the most of the axial through holes of the same radial venting groove in the second gas distribution plate
  • the cross-sectional area increases sequentially in the radial direction of the second gas distribution plate.
  • the density of each of the axial through holes in the same radial venting groove of the second gas distribution plate increases in the radial direction of the second gas distribution plate.
  • the second gas distribution plate comprises a plurality of circumferential aeration grooves, and the width of each of the circumferential aeration grooves increases sequentially outward in the radial direction of the second gas distribution plate.
  • the present invention also provides a plasma processing apparatus comprising the gas distributing device as described above.
  • the plasma processing apparatus is specifically a plasma etching apparatus.
  • the gas distribution device of the present invention has a top surface of the first gas distribution plate provided with a circumferential venting groove around its central position, and a plurality of radial directions communicating with the circumferential venting groove.
  • a venting groove; a process gas flowing in from the first intake passage may be along the radial venting groove The lateral velocity is diffused to achieve a uniform distribution of the process gas in the radial direction; then, the process gas enters the circumferential venting groove from the radial venting groove, thereby achieving uniform distribution of the process gas in the circumferential direction.
  • the gas distribution device provided by the invention can ensure the high uniformity of the process gas in the reaction chamber by a simple structure, and overcomes the defects that the structure of the existing gas distribution device is too complicated and the processing cost is high;
  • the structure of the plasma processing apparatus provided is thus also simplified and the cost is also reduced.
  • FIG. 1 is a schematic structural view of a conventional plasma processing apparatus
  • FIG. 2 is a schematic structural view of a gas distribution device in the plasma processing apparatus shown in FIG. 1;
  • FIG. 3 is a schematic structural view showing a first embodiment of the gas distribution device provided by the present invention;
  • FIG. 4 is a schematic view of a first embodiment of the first gas distribution plate of FIG. 3;
  • FIG. 5 is a schematic plan view of the first gas distribution plate of FIG.
  • Figure 6 is a partial enlarged view of the portion A of Figure 5;
  • Figure 7 is a schematic structural view of a second embodiment of the gas distribution device provided by the present invention.
  • Figure 8 is a schematic view of the first embodiment of the second gas distribution plate of Figure 7;
  • Figure 9 is a top plan view of the second gas distribution plate of Figure 8;
  • Figure 10 is a partial enlarged view of the portion B of Figure 9;
  • Figure 11 is a top plan view of a second embodiment of the second gas distribution plate of Figure 7. detailed description
  • the core of the present invention is to provide a gas distribution device which is relatively simple in construction and capable of providing a process gas having a high uniformity.
  • Another core of the present invention is to provide a plasma processing apparatus including the above gas distribution device.
  • FIG. 3 is a schematic structural view of a first embodiment of a gas distribution device according to the present invention.
  • the support plate 3 is provided with a first intake passage 31 substantially at its center position.
  • a shower electrode 5, also disposed substantially horizontally, is fixedly coupled to form a gas distribution chamber therebetween.
  • the first gas distribution plate 4 is disposed in the gas distribution chamber in a conventional manner, and the first gas distribution plate 4 is parallel with the support plate 3 and the shower head electrode 5 and is kept at an appropriate distance so as to be in the first gas distribution. Both the top and bottom of the panel 4 form a cavity of suitable thickness.
  • the first gas distribution plate 4 has a plurality of axial through holes 43 (see FIG. 4) penetrating therethrough, so that the top and bottom cavities can be communicated with each other; the shower head electrode 5 has a plurality of vent holes distributed uniformly (in the figure) The reference numeral is not added) to communicate the cavity at the bottom of the first gas distribution plate 4 and the reaction chamber of the plasma processing apparatus.
  • FIG. 4 is a schematic view of a first embodiment of the first gas distribution plate of FIG. 3.
  • FIG. 5 is a top view of the first gas distribution plate of FIG. It is a partial enlarged view of the A portion in Fig. 5.
  • the first gas distribution plate 4 provided by the present invention is substantially circular; of course, it is also possible to set it to other shapes such as a regular polygon.
  • the center position of the first gas distribution plate 4 preferably corresponds to the first intake passage 31 of the support plate 3, so that the process gas flowing in from the first intake passage 31 can first reach the center position of the first gas distribution plate 4.
  • the first gas distribution plate 4 is provided with at least one circumferential venting groove 41 around its central position toward the surface of the support plate 3; the circumferential venting groove 41 may be specifically circular, when the number is two or two In the above case, each of the circumferential venting grooves 41 is preferably disposed concentrically.
  • the first gas distribution plate 4 includes three circumferential aeration grooves: a first circumferential aeration groove 41a, a second circumferential aeration groove 41b, and a third circumferential aeration groove 41c.
  • the first gas distribution plate 4 is further provided with a plurality of radial ventilation grooves 42 toward the surface of the support plate 3, and each of the radial ventilation grooves 42 is partitioned by the circumferential ventilation groove 41 into an inner segment 42a, a middle segment 42b and an outer segment 42c; As shown in FIG. 6, the number of the above three is sequentially increased, so that the radial venting grooves 42 are evenly distributed throughout the first gas distribution plate 4.
  • each of the radial venting grooves 42 is also uniformly hooked in the circumferential direction, i.e., the angle between the respective radial venting grooves 42 is preferably substantially equal.
  • each venting groove cross section may be square, trapezoidal, circular, or elliptical. Shape, etc., for processing convenience, it is best to set it to a square.
  • Each of the radial venting grooves 42 meets a central portion of the first gas distribution plate 4, so that a central groove 44 is formed in the central portion; the central groove 44 corresponds to the first intake passage 31 of the support plate 3.
  • the cross-sectional shape of the axial through hole 43 may be a circle, a square, a triangle or the like, and the axial through hole 43 may be a straight hole, a stepped hole or a slanted hole; it is preferably set as a circular straight hole to facilitate processing.
  • the process gas flowing into the central groove 44 from the first inlet passage 31 of the support plate 3 can follow the diameter
  • the lateral diffusion of the process gas in the radial direction of the first gas distribution plate 4 is achieved, and the process gas is introduced into each of the circumferential venting grooves 41 by the radial venting grooves 42 to realize the process gas.
  • the width of the radial vent groove 42 may be set to be gradually reduced from the central portion of the first gas distribution plate 4 toward the outer peripheral portion thereof. As shown in Fig. 6, the widths of the inner segment 42a, the middle segment 42b, and the outer segment 42c of the radial venting groove 42 are sequentially decreased, and the width of each segment itself is also tapered outward.
  • the space of the reaction chamber below the outer peripheral portion of the first gas distribution plate 4 is large, so the process gas demand is also large; the width of the radial vent groove 42 is set to be outwardly tapered as described above, which is beneficial to the process gas.
  • the central groove 44 flows along the radial venting groove 42 toward the outer peripheral portion of the first gas distribution plate 4 at a relatively high speed, thereby ensuring that the reaction chamber below the outer peripheral portion can obtain a sufficient amount of process gas to prevent the peripheral portion from appearing. Lack of gas.
  • the minimum cross-sectional area of the axial through hole 43 (i.e., its gas passage capability) can be adjusted to minimize the axial through hole 43 in the inner portion 42a, the middle portion 42b, and the outer portion 42c of the radial venting groove 42.
  • the cross-sectional area is sequentially increased; that is, the minimum cross-sectional areas of the axial through hole 43a, the axial through hole 43b, and the axial through hole 43c are sequentially increased.
  • the process gas demand of the reaction chamber below the outer peripheral portion of the first gas distribution plate 4 is large, and therefore, the process gas can be improved by appropriately increasing the minimum cross-sectional area of the axial through hole 43 of the outer peripheral portion.
  • the gas supply is increased, and the occurrence of gas shortage in the peripheral portion of the reaction chamber is further avoided.
  • the density of the axial through holes 43 can be adjusted such that the axial through holes 43 have a greater density at the outer peripheral portion of the first gas distribution plate 4; that is, the distance between the axial through holes 43a and the axial through holes 43b is larger than the axis.
  • the purpose of this setting is also to increase the gas supply to the outer peripheral portion of the reaction chamber to avoid gas shortage.
  • each circumferential venting groove 41 can be adjusted so that the width of the circumferential venting groove located in the outer ring is slightly larger than the width of the circumferential venting groove on the inner side; that is, the first circumferential venting groove 41a, the second week
  • the widths of the vent groove 41b and the third circumferential vent groove 41c are sequentially increased.
  • the process gas passing ability of each circumferential venting groove is sequentially increased, further ensuring the gas supply amount in the outer peripheral portion of the reaction chamber.
  • FIG. 7 is a schematic structural view of another specific embodiment of a gas distribution device according to the present invention.
  • the gas distribution device provided by the present invention is an improvement based on the above first embodiment.
  • the support plate 3 is further provided with a second intake passage 32 that is offset from the first intake passage 31. At the same time, the radius of the first gas distribution plate 4 is reduced to be smaller than the distance between the first intake passage 31 and the second intake passage 32.
  • a second gas distribution plate 6 is disposed, the inner diameter of the second gas distribution plate 6 is equal to the outer diameter of the first gas distribution plate 4, and horizontally surrounds the outer side of the first gas distribution plate 4; the two are arranged as a whole on the support Between the plate 3 and the showerhead electrode 5.
  • a seal ring (not shown) is disposed in the cavity between the support plate 3 and the first gas distribution plate 4 and the second gas distribution plate 6, and the seal ring separates the cavity into a central portion that is isolated from each other and The annular outer peripheral portion, the bottoms of the two are the first gas distribution plate 4 and the second gas distribution plate 6, respectively.
  • the first intake passage 31 communicates with the center portion; the second intake passage 32 communicates with the annular outer peripheral portion.
  • FIG. 8 is a schematic view of the first embodiment of the second gas distribution plate of FIG. 7 .
  • FIG. 9 is a schematic plan view of the second gas distribution plate of FIG. 8 .
  • 10 is a partial enlarged view of the portion B in Fig. 9.
  • the second gas distribution plate 6 provided by the present invention is substantially annular; the inner diameter thereof is adapted to the outer diameter of the first gas distribution plate 4, and the two are fixed in a conventional manner, such as a step surface. Connected to one.
  • the second gas distribution plate 6 is provided with at least one circumferential venting groove 61 surrounding the first gas distribution plate 4 toward the surface of the support plate 3; in the present embodiment, the second gas distribution plate 6 includes only one circumferential venting groove 61.
  • the circumferential venting grooves 61 may specifically be circular, and when the number is two or more, the circumferential venting grooves 61 are preferably disposed concentrically.
  • the second intake passage 32 preferably corresponds to the circumferential venting groove 61 so that the process gas can smoothly spread in the circumferential direction along the circumferential venting groove 61.
  • the second gas distribution plate 6 is further provided with a plurality of radially distributed radial directions toward the surface of the support plate 3.
  • the venting groove 62, each of the radial venting grooves 62 is partitioned by the circumferential venting groove 61 into an inner segment 62a and an outer segment 62b.
  • the radial venting grooves 62 and the radial venting grooves 62 and the circumferential venting grooves 61 have the same depth; the cross-sectional shape of each venting groove may be square, trapezoidal, circular, elliptical or the like. For ease of processing, it is best to set it to a square. In the venting groove 62.
  • the cross-sectional shape of the axial through hole 63 may be circular, square, triangular, etc., and the axial through hole 63 may be a straight hole, a stepped hole or a slanted hole; it is preferably set as a circular straight hole to facilitate processing.
  • the process gas may enter the central portion and the annular outer peripheral portion of the lower chamber of the support plate 3 from the first intake passage 31 and the second intake passage 32, respectively, and may pass through the first gas distribution plate 4 and the second gas distribution plate 6, respectively.
  • the cavity entering the top of the showerhead electrode 5 is then passed into the reaction chamber of the plasma processing apparatus through a vent that is evenly distributed over the showerhead electrode.
  • the process gas flows of the first intake passage 31 and the second intake passage 32 can be adjusted separately, thereby avoiding excessive difference in process gas density between the central portion and the peripheral portion of the reaction chamber.
  • the width of the radial venting groove 62 may be set to gradually increase from the inner side to the outer side of the second gas distribution plate 6. As shown in Fig. 10, the widths of the inner section 62a and the outer section 62b of the radial venting groove 62 are sequentially increased, and the widths of the two sections themselves are tapered outward.
  • the space of the reaction chamber below the outer portion of the second gas distribution plate 6 is large, and the process gas demand is also large; while the space of the reaction chamber below the inner portion is relatively small, and the process gas demand is also small.
  • the process gas flows from the second intake passage 32 into the circumferential venting groove 61, more of the portion will flow to the outside along the outer portion 62b of the wider radial venting groove 62, and less portions will follow the narrower radial direction.
  • the inner section 62a of the venting groove 62 flows to the inner side; therefore, the uniformity of the distribution of the process gas can be improved.
  • the minimum cross-sectional area of the axial through hole 63 can be adjusted to increase the minimum cross-sectional area of the axial through hole 63 in the inner section 62a and the outer section 62b of the radial venting groove 62 in order; that is, the axial passage
  • the minimum cross-sectional area of the hole 63a and the axial through hole 63b is sequentially increased.
  • the gas passage capability of the axial through-hole 63 is enhanced; therefore, the gas supply capacity outside the second gas distribution plate 6 is enhanced, thereby preventing the occurrence of gas shortage in the peripheral portion of the reaction chamber. phenomenon.
  • the density of the axial through holes 63 can be adjusted such that the axial through holes 63 have a greater density at the outer peripheral portion of the second gas distribution plate 6; that is, the axial through holes 63a of the inner portion 62a of the radial venting groove 62
  • the density is less than the density of the axial through holes 63b in the inner and outer sections 62b of the radial venting groove 62.
  • the purpose of this setting is also to increase the gas supply in the outer peripheral portion of the reaction chamber to avoid gas shortage.
  • Figure 11 is a top plan view of a second embodiment of the second gas distribution plate of Figure 7.
  • the second gas distribution plate provided by the present invention is an improvement based on the first embodiment described above; the improvement is mainly in the week corresponding to the second intake passage 32.
  • the position of the axial through hole 631 in FIG. 11 corresponds to the second intake passage 32, so that the process gas flowing in from the second intake passage 32 first reaches the position where the axial through hole 631 is located, and then is divided into two strands.
  • the direction indicated by the arrow in the figure diverges to both sides, and the two air streams eventually merge to the position where the axial through hole 632 is located.
  • the axial through hole 631 is generally symmetrical with the position of the axial through hole 632.
  • the width of the circumferential venting groove 61 can be set to be tapered in the direction of the air flow (i.e., in the direction indicated by the arrow in Fig. 11).
  • the flow rate of the process gas decreases in the direction indicated by the arrow in the figure; however, since the width of the circumferential venting groove 61 is gradually reduced, Therefore, the flow rate does not decrease significantly, that is, the ability of the process gas to diffuse into the axial through hole 632 is not significantly lowered, so that the uniformity of the distribution of the process gas is further ensured.
  • the plasma processing apparatus provided by the present invention includes the gas distribution apparatus as described above.
  • the plasma processing apparatus may be a plasma etching apparatus or a plasma deposition apparatus.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Description

等离子体处理设备及其气体分配装置 技术领域
本发明涉及微电子技术领域， 特别涉及一种用于等离子体处理设备中的 气体分配装置。 本发明还涉及一种包括上述气体分配装置的等离子体处理设 备。 背景技术
等离子体处理设备广泛应用于微电子技术领域。
请参考图 1 , 图 1为目前常见的一种等离子体处理设备的结构示意图。 等离子体处理设备 1通常包括壳体 11 , 壳体 11中具有反应腔室 12, 反 应腔室 12的顶部和底部分别相对应地设有上极板 13和下极板 14。上极板 13 与壳体 11之间由绝缘部件 15隔离；下极板 14的顶部可以支撑待处理加工件。 上述加工件应当包括晶片以及与其具有相同加工原理的其他加工件。 下文所 述加工件的含义与此相同。
等离子体处理设备 1工作时， 通过干泵等真空获得装置 （图中未示出） 在反应腔室 12中制造并维持接近真空的状态。在此状态下，通过气体分配装 置 16向反应腔室 12中输入工艺气体， 并在上极板 13和下极板 14之间输入 适当的射频， 从而激活所述工艺气体， 进而在加工件的表面产生并维持等离 子体环境。 由于具有强烈的刻蚀以及淀积能力， 所述等离子体可以与所述加 工件发生刻蚀或者淀积等物理化学反应， 以获得所需要的刻蚀图形或者淀积 层。 上述物理化学反应的副产物由所述真空获得装置从反应腔室 12中抽出。
众所周知， 上述加工件表面工艺气体分布的均勾程度对于加工件的品质 具有重要意义。随着晶圓等待加工件整体尺寸的增加，反应腔室 12的横截面 积越来越大， 在其中实现工艺气体的均勾分布越来越困难。 上述工艺气体分布的均匀程度与多种因素相关， 其中， 气体分配装置的 结构在很大程度上决定了反应腔室中工艺气体分布的均匀性。
请参考图 2, 图 2为目前常见的一种气体分配装置的结构示意图。
目前常见的气体分配装置 2包括大体呈圓形的支撑板 21 , 支撑板 21位 于等离子体处理设备反应腔室顶部的中央位置， 且以常规的方式与上极板固 定连接， 其中心位置设有进气孔 211。
支撑板 21的下方固定连接有大体呈圓形且与其同轴的喷头电极 23 , 两 者的连接部位保持气密封（此处以及下文所述气密封， 均指一种结果， 而非 手段； 也即无论釆用何种具体技术手段， 支撑板 21与喷头电极 23的连接部 位都不应出现气体泄漏现象），且两者之间形成一气体分配腔室。上述进气孔 211与所述气体分配腔室连通。
所述气体分配腔室中以常规的方式设置多层阻流板 22, 各层阻流板 22 之间， 以及阻流板 22与支撑板 21、喷头电极 23之间保留适当的距离， 因此， 所述气体分配腔室自上而下被隔离为若干小腔室。阻流板 22包括多个将其轴 向贯通的气体通道 221 , 从而将所述各个小腔室连通。
由于各层阻流板 22的气体通道 221都相错离地设置， 因此工艺气体经 过阻流板 22时被迫产生一定的横向位移， 因此径向均勾度可以得到增加； 随 着阻流板 22的层数的增加，工艺气体发生横向位移的次数也增多， 因此喷头 电极 23的上表面 232处得到的工艺气体的径向均匀度也将不断提高。
喷头电极 23中均勾地分布着多个通气孔 231 ,用以连通所述气体分配腔 室中最下层的小腔室以及喷头电极 23下方的反应腔室。 喷头电极 23的上表 面 232处较为均匀的工艺气体可以自通气孔 231流入等离子体处理设备的反 应腔室中。
然而， 如上所述， 上述气体分配装置是通过阻流板 22 的阻碍作用迫使 工艺气体产生横向位移， 并进而使其径向均匀度得到增加的； 因此， 要想获 得较高的横向均匀度， 就需要设置较多层的阻流板 22。 这将导致上述气体分 配装置的结构过于复杂，体积较大， 加工成本较高； 而减少阻流板 22的数目 则会降低工艺气体分布的均匀度。
因此， 现有的气体分配装置要么结构过于复杂、 加工成本较高； 要么难 以获得较高的气体分布均匀度。 如何在不降低工艺气体分布的均匀度的前提 下简化气体分配装置的结构， 是本领域技术人员目前需要解决的技术问题。 发明内容
本发明的目的是提供一种气体分配装置， 其结构较为简单而且能够提供 具有较高均匀度的工艺气体。 本发明的另一目的是提供一种包括上述气体分 配装置的等离子体处理设备。
为解决上述技术问题， 本发明提供一种气体分配装置， 用于等离子体处 理设备，包括固定连接于所述等离子体处理设备上电极且水平设置的支撑板， 其中心部位具有第一进气通道； 所述支撑板的下方固定连接与其相平行的喷 头电极，两者之间的空腔中水平地设置具有多个轴向通孔的第一气体分配板； 所述第一气体分配板的中心部位与所述支撑板的中心部位相对应； 所述第一 气体分配板的顶面设有至少一条环绕其中心位置的周向通气槽， 以及多条与 所述周向通气槽相连通的径向通气槽； 所述轴向通孔设置于所述周向通气槽 以及所述径向通气槽之中。
优选地， 所述径向通气槽均勾分布且其宽度沿第一气体分配板径向方向 向外逐渐缩小。
优选地， 同一所述周向通气槽中各轴向通孔的最小横截面积相等； 同一 所述径向通气槽中各轴向通孔的最小横截面积沿第一气体分配板径向方向向 外逐渐增大。
优选地， 同一所述径向通气槽中轴向通孔的密度沿第一气体分配板径向 方向向外逐渐增大。
优选地， 所述第一气体分配板包括多条周向通气槽， 这些周向通气槽的 宽度沿第一气体分配板径向方向向外依次增加。
优选地， 所述支撑板进一步包括偏离其中心部位的第二进气通道， 所述 第二进气通道与所述第一进气通道的距离大于所述第一气体分配板的半径； 并且在所述支撑板和喷头电极之间的空腔中还包括第二气体分配板， 所述第 二气体分配板紧密环绕所述第一气体分配板， 两者顶部的腔体由密封圈相隔 离； 所述第二气体分配板包括至少一条周向通气槽， 以及多条与所述周向通 气槽相连通的径向通气槽 , 所述周向通气槽和径向通气槽之中设有多个轴向 通孔。
优选地， 所述第二进气通道与所述第二气体分配板的一条周向通气槽相 对应。
优选地， 与所述第二进气通道相对应的周向通气槽的宽度沿气流方向渐 缩。
优选地， 所述第二气体分配板中径向通气槽的宽度沿第二气体分配板径 向方向向外逐渐增力口。
优选地， 所述第二气体分配板中位于同一径向通气槽的各轴向通孔的最
'J、横截面积沿第二气体分配板径向方向向外依次增加。
优选地， 所述第二气体分配板中位于同一径向通气槽的各轴向通孔的密 度沿第二气体分配板径向方向向外依次增大。
优选地， 所述第二气体分配板包括多条周向通气槽， 各条所述周向通气 槽的宽度沿第二气体分配板径向方向向外依次增加。
本发明还提供了一种等离子体处理设备， 包括如上所述的气体分配装 置。
优选地， 所述等离子体处理设备具体为等离子体刻蚀设备。
相对上述背景技术， 本发明所提供的气体分配装置， 其第一气体分配板 的顶面设有环绕其中心位置的周向通气槽， 以及多条与所述周向通气槽相连 通的径向通气槽； 自第一进气通道流入的工艺气体可以沿所述径向通气槽迅 速横向扩散， 从而实现工艺气体在径向上的均匀分布； 然后， 工艺气体由所 述径向通气槽进入所述周向通气槽， 从而实现工艺气体在周向的均匀分布。 因此， 本发明所提供的气体分配装置通过简单的结构即可保证工艺气体在反 应腔室具有较高的均匀度， 克服了现有气体分配装置结构过于复杂、 加工成 本较高的缺陷；本发明所提供的等离子体处理设备的结构因而也得到了简化， 成本也得到了降低。 附图说明
图 1为目前常见的一种等离子体处理设备的结构示意图；
图 2为图 1所示等离子体处理设备中气体分配装置的结构示意图； 图 3 为本发明所提供的气体分配装置第一种具体实施方式的结构示意 图；
图 4为图 3中第一气体分配板一种具体实施方式的轴测示意图； 图 5为图 4所示第一气体分配板的俯视示意图；
图 6为图 5中 A部位的局部放大图；
图 7 为本发明所提供的气体分配装置第二种具体实施方式的结构示意 图；
图 8为图 7中第二气体分配板第一种具体实施方式的轴测示意图； 图 9为图 8所示第二气体分配板的俯视示意图；
图 10为图 9中 B部位的局部放大图； 以及
图 11为图 7中第二气体分配板第二种具体实施方式的俯视示意图。 具体实施方式
本发明的核心是提供一种气体分配装置， 其结构较为简单而且能够提供 具有较高均勾度的工艺气体。 本发明的另一核心是提供一种包括上述气体分 配装置的等离子体处理设备。 为了使本技术领域的人员更好地理解本发明方案， 下面结合附图和具体 实施方式对本发明作进一步的详细说明。
请参考图 3 , 图 3为本发明所提供的气体分配装置第一种具体实施方式 的结构示意图。
在第一种具体实施方式中，本发明所提供的气体分配装置包括支撑板 3 , 支撑板 3通常水平地设置，位于等离子体处理设备反应腔室顶部的中央位置， 且以常规的方式与所述等离子体处理设备的上极板固定连接。 支撑板 3设有 大体位于其中心位置的第一进气通道 31。
支撑板 3的下方固定连接有同样大体上水平设置的喷头电极 5 , 两者之 间形成一气体分配腔室。 所述气体分配腔室中以常规的方式设置第一气体分 配板 4, 第一气体分配板 4与支撑板 3以及喷头电极 5之间均相平行且保留 适当的距离， 从而在第一气体分配板 4的顶部和底部均形成具有适当厚度的 腔体。
第一气体分配板 4具有多个将其贯通的轴向通孔 43 (参见图 4 ), 因而 可以将其顶部和底部的腔体连通；喷头电极 5具有若干均勾分布的通气孔（图 中未添加附图标记 ),以便连通第一气体分配板 4底部的腔体和等离子体处理 设备的反应腔室。
请参考图 4、 图 5以及图 6, 图 4为图 3中第一气体分配板一种具体实 施方式的轴测示意图； 图 5为图 4所示第一气体分配板的俯视示意图； 图 6 为图 5中 A部位的局部放大图。
在第一种具体实施方式中， 本发明所提供的第一气体分配板 4大体为圓 形； 当然， 如果将其设为正多边形等其他形状也是可以的。 第一气体分配板 4的中心位置最好与支撑板 3的第一进气通道 31相对应， 以便由第一进气通 道 31流入的工艺气体可以首先到达第一气体分配板 4的中心位置。
第一气体分配板 4朝向支撑板 3的表面设有至少一条环绕其中心位置的 周向通气槽 41 ; 周向通气槽 41具体可以是圓形， 当其数目为两条或者两条 以上时，各周向通气槽 41最好同心地设置。本具体实施方式中第一气体分配 板 4包括三条周向通气槽： 第一周向通气槽 41a、 第二周向通气槽 41b和第 三周向通气槽 41c。
第一气体分配板 4朝向支撑板 3的表面进一步设有多条径向通气槽 42, 各条径向通气槽 42由周向通气槽 41分隔为内段 42a、中段 42b以及外段 42c； 如图 6所示，上述三者的数目依次增加，从而使径向通气槽 42均勾地分布于 整个第一气体分配板 4。 各条径向通气槽 42在圓周方向上最好也均勾分布， 即各条径向通气槽 42之间的夹角最好大体相等。
此外， 各径向通气槽 42之间， 以及径向通气槽 42与周向通气槽 41之 间最好具有相同的深度； 各通气槽横截面的形状可以为方形、 梯形、 圓形、 椭圓形等， 为了加工方便， 最好将其设为方形。
各径向通气槽 42交汇于第一气体分配板 4的中心部分， 因此在该中心 部分形成一中心凹槽 44; 中心凹槽 44对应于支撑板 3的第一进气通道 31。 通气槽 42之中。 轴向通孔 43的截面形状可以为圓形、 方形、 三角形等， 轴 向通孔 43可以为直孔、 阶梯孔或者斜孔； 最好将其设为圓形直孔， 以方便加 工。
由于在第一气体分配板 4的顶面设置了相互连通的周向通气槽 41 以及 径向通气槽 42, 自支撑板 3的第一进气通道 31流入中心凹槽 44的工艺气体 可以沿径向通气槽 42迅速横向扩散，从而实现工艺气体在第一气体分配板 4 径向上的均匀分布； 然后， 工艺气体由各径向通气槽 42 进入各周向通气槽 41 , 从而实现工艺气体在第一气体分配板 4圓周方向上的均匀分布。 因此， 本发明所提供的气体分配装置通过简单的结构即可保证工艺气体在反应腔室 具有较高的均勾度， 克服了前述现有的气体分配装置结构过于复杂、 加工成 本较高的缺陷。
可以对上述第一种具体实施方式中的第一气体分配板进行若干改进。 首先， 可以将径向通气槽 42的宽度设置为自第一气体分配板 4的中心 部分向其外周部分逐渐缩小。 如图 6所示， 径向通气槽 42的内段 42a、 中段 42b以及外段 42c的宽度依次减小， 且上述各段自身的宽度也是向外侧渐缩 的。
第一气体分配板 4外周部分下方反应腔室的空间较大， 因此工艺气体需 求量也较大；将径向通气槽 42的宽度设置为如上所述的向外渐缩，有利于工 艺气体自中心凹槽 44沿径向通气槽 42向第一气体分配板 4的外周部分以较 高的速度流动， 进而保证了外周部分下方的反应腔室能够得到足够的工艺气 体量， 避免该外周部分出现缺气现象。
其次， 可以调整轴向通孔 43的最小横截面积（也即其气体通过能力）， 使位于径向通气槽 42的内段 42a、 中段 42b以及外段 42c中的轴向通孔 43 的最小横截面积依次增大； 即， 轴向通孔 43a、 轴向通孔 43b、 轴向通孔 43c 的最小横截面积依次增大。
如上所述， 第一气体分配板 4外周部分下方反应腔室的工艺气体需求量 较大， 因此， 适当增大所述外周部分的轴向通孔 43的最小横截面积， 可以提 高其工艺气体通过能力， 进而增大气体供应量， 进一步避免所述反应腔室的 外周部分出现缺气现象。
再次， 还可以调整轴向通孔 43的密度， 使轴向通孔 43在第一气体分配 板 4外周部的密度较大； 即， 轴向通孔 43a与轴向通孔 43b的间距大于轴向 通孔 43b与轴向通孔 43c的间距。 这样设置的目的， 同样是为了增大反应腔 室外周部分的气体供应量， 避免出现缺气现象。
最后， 可以调整各周向通气槽 41 的宽度， 使位于外圈的周向通气槽的 宽度， 略大于其内侧的周向通气槽的宽度； 即， 第一周向通气槽 41a、 第二 周向通气槽 41b和第三周向通气槽 41c的宽度依次增大。 随着宽度的增大， 各周向通气槽的工艺气体通过能力依次增强， 进一步保证了反应腔室外周部 分的气体供应量。 请参考图 7 , 图 7为本发明所提供的气体分配装置另一种具体实施方式 的结构示意图。
在第二种具体实施方式中， 本发明所提供的气体分配装置是在上述第一 种具体实施方式的基础上进行的改进。
支撑板 3进一步设有偏离第一进气通道 31的第二进气通道 32。 同时， 减小了第一气体分配板 4的半径，使其小于第一进气通道 31与第二进气通道 32的距离。
进一步设置第二气体分配板 6, 第二气体分配板 6的内径等于第一气体 分配板 4的外径， 并水平地环绕于第一气体分配板 4的外侧； 两者作为一个 整体设置于支撑板 3与喷头电极 5之间。 支撑板 3与第一气体分配板 4以及 第二气体分配板 6之间的腔体中设置密封圈（图中未示出），所述密封圈将上 述腔体分隔为相互隔离的中心部分以及环形外周部分， 两者的底部分别为第 一气体分配板 4以及第二气体分配板 6。上述第一进气通道 31连通所述中心 部分； 上述第二进气通道 32连通所述环形外周部分。
请参考图 8、 图 9以及图 10, 图 8为图 7中第二气体分配板第一种具体 实施方式的轴测示意图； 图 9为图 8所示第二气体分配板的俯视示意图； 图 10为图 9中 B部位的局部放大图。
在该具体实施方式中，本发明所提供的第二气体分配板 6大体为圓环形； 其内径与第一气体分配板 4的外径相适应， 两者以常规的方式， 比如台阶面， 固定连接于一体。
第二气体分配板 6朝向支撑板 3的表面设有至少一条环绕第一气体分配 板 4的周向通气槽 61 ; 本具体实施方式中第二气体分配板 6仅包括一条周向 通气槽 61。 周向通气槽 61具体可以是圓形， 当其数目为两条或者两条以上 时， 各周向通气槽 61最好同心地设置。 第二进气通道 32最好对应于周向通 气槽 61 , 以便工艺气体可以顺利地沿周向通气槽 61沿圓周方向扩散。
第二气体分配板 6朝向支撑板 3的表面进一步设有多条均勾分布的径向 通气槽 62,各条径向通气槽 62由周向通气槽 61分隔为内段 62a和外段 62b。 各径向通气槽 62之间以及径向通气槽 62与周向通气槽 61之间最好具 有相同的深度； 各通气槽横截面的形状可以为方形、 梯形、 圓形、 椭圓形等， 为了加工方便， 最好将其设为方形。 通气槽 62之中。 轴向通孔 63的截面形状可以为圓形、 方形、 三角形等， 轴 向通孔 63可以为直孔、 阶梯孔或者斜孔； 最好将其设为圓形直孔， 以方便加 工。
工艺气体可以自第一进气通道 31和第二进气通道 32分别进入支撑板 3 下部腔体的中心部分和环形外周部分， 并可以分别经由第一气体分配板 4和 第二气体分配板 6进入喷头电极 5顶部的腔体， 然后通过均匀分布于喷头电 极的通气孔进入等离子体处理设备的反应腔室中。
因此， 可以分别调整第一进气通道 31和第二进气通道 32的工艺气体流 量， 从而避免所述反应腔室的中心部分和外周部分工艺气体密度差异过大。
还可以对上述第二气体分配板进行若干改进。
首先， 可以将径向通气槽 62的宽度设置为自第二气体分配板 6的内侧 向外侧逐渐增大。 如图 10所示， 径向通气槽 62的内段 62a、 外段 62b的宽 度依次增大， 且上述两段自身的宽度是向外侧渐缩的。
第二气体分配板 6外侧部分下方反应腔室的空间较大， 工艺气体需求量 也较大； 而其内侧部分下方反应腔室的空间相对较小， 工艺气体需求量也较 小。 当工艺气体自第二进气通道 32流入周向通气槽 61后， 较多的部分将沿 较宽的径向通气槽 62外段 62b流向外侧，而较少的部分将沿较窄的径向通气 槽 62内段 62a流向内侧； 因此， 工艺气体分布的均匀度可以得到提高。
其次， 可以调整轴向通孔 63的最小横截面积， 使位于径向通气槽 62的 内段 62a、 外段 62b中轴向通孔 63的最小横截面积依次增大； 即， 轴向通孔 63a、 轴向通孔 63b的最小横截面积依次增大。 随着最小横截面积的增大， 轴向通孔 63 的气体通过能力得到增强； 因 此， 第二气体分配板 6外侧的气体供应能力得到增强， 进而可以避免反应腔 室的外周部分出现缺气现象。
再次， 还可以调整轴向通孔 63的密度， 使轴向通孔 63在第二气体分配 板 6外周部的密度较大；即，径向通气槽 62内段 62a中轴向通孔 63a的密度， 小于径向通气槽 62内外段 62b中轴向通孔 63b的密度。这样设置的目的， 同 样是为了增大反应腔室外周部分的气体供应量， 避免出现缺气现象。
请参考图 11 , 图 11为图 7中第二气体分配板第二种具体实施方式的俯 视示意图。
在第二种具体实施方式中， 本发明所提供的第二气体分配板是在上述第 一种具体实施方式的基础上所作的改进； 改进点主要在于与第二进气通道 32 相对应的周向通气槽 61的形状。
图 11中轴向通孔 631所在的位置与第二进气通道 32相对应， 因此自第 二进气通道 32流入的工艺气体首先到达轴向通孔 631所在的位置，然后分两 股沿着图中箭头所示方向向两侧发散， 两股气流最终相汇合于轴向通孔 632 所在的位置。 显然， 轴向通孔 631与轴向通孔 632所在的位置大体相对称。
可以将周向通气槽 61的宽度设为沿气流方向（也即图 11中箭头所示方 向）渐缩。 随着工艺气体自周向通气槽 61向其两侧的径向通气槽 62中扩散， 沿着图中箭头所示方向工艺气体流量不断降低； 但是， 由于周向通气槽 61 的宽度逐渐缩小， 因此其流速不会显著下降， 也即工艺气体向轴向通孔 632 扩散的能力不会显著降低， 这样， 工艺气体分布的均匀度也就得到进一步的 保障。
本发明所提供的等离子体处理设备包括如上所述的气体分配装置。 具体 地，所述等离子体处理设备可以是等离子体刻蚀设备或者等离子体淀积设备。
以上对本发明所提供的气体分配装置以及应用了该气体分配装置的等 离子体处理设备进行了详细介绍。 本文中应用了具体个例对本发明的原理及 实施方式进行了阐述， 以上实施例的说明只是用于帮助理解本发明的方法及 其核心思想。 应当指出， 对于本技术领域的普通技术人员来说， 在不脱离本 发明原理的前提下， 还可以对本发明进行若干改进和修饰， 这些改进和修饰 也落入本发明权利要求的保护范围内。

Claims

UP-081852-00 利 要 求 书
1、 一种气体分配装置， 用于等离子体处理设备， 包括固定连接于所述 等离子体处理设备上电极且水平设置的支撑板（3), 其中心部位具有第一进 气通道（31 ); 所述支撑板（3)的下方固定连接与其相平行的喷头电极（5), 两者之间的空腔中水平地设置具有多个轴向通孔（ 43 )的第一气体分配板（ 4 ); 所述第一气体分配板（4)的中心部位与所述支撑板（3)的中心部位相对应； 其特征在于， 所述第一气体分配板（4)的顶面设有至少一条环绕其中心位置 的周向通气槽（41 ), 以及多条与所述周向通气槽 (41 )相连通的径向通气槽 (42); 所述轴向通孔（43)设置于所述周向通气槽（41 )以及所述径向通气 槽（42)之中。
2、 如权利要求 1 所述的气体分配装置， 其特征在于， 所述径向通气槽 (42) 均匀分布且其宽度沿第一气体分配板（4)径向方向向外逐渐缩小。
3、 如权利要求 2所述的气体分配装置， 其特征在于， 同一所述周向通 气槽 (41 ) 中各轴向通孔（43) 的最小横截面积相等； 同一所述径向通气槽
(42)中各轴向通孔（43)的最小横截面积沿第一气体分配板（4)径向方向 向外逐渐增大。
4、 如权利要求 3 所述的气体分配装置， 其特征在于， 同一所述径向通 气槽 (42)中轴向通孔（43)的密度沿第一气体分配板（4)径向方向向外逐 渐增大。
5、 如权利要求 4所述的气体分配装置， 其特征在于， 所述第一气体分 配板（4) 包括多条周向通气槽 (41 ), 这些周向通气槽 (41 ) 的宽度沿第一 气体分配板（4)径向方向向外依次增加。
6、 如权利要求 1至 5中任一项所述的气体分配装置， 其特征在于， 所 述支撑板（3)进一步包括偏离其中心部位的第二进气通道（32), 所述第二 进气通道（32)与所述第一进气通道（31 ) 的距离大于所述第一气体分配板 (4) 的半径； 并且
在所述支撑板（3)和喷头电极（5)之间的空腔中还包括第二气体分配 板（ 6 ), 所述第二气体分配板（ 6 )紧密环绕所述第一气体分配板（ 4 ), 两者 顶部的腔体由密封圈相隔离， 所述第二气体分配板（6)包括至少一条周向通 气槽（61 ), 以及多条与所述周向通气槽（61 )相连通的径向通气槽 (62), 所述周向通气槽（61 )和径向通气槽 (62)之中设有多个轴向通孔（63)。
7、 如权利要求 6所述的气体分配装置， 其特征在于， 所述第二进气通 道（32)与所述第二气体分配板（6) 的一条周向通气槽（61 )相对应。
8、 如权利要求 7所述的气体分配装置， 其特征在于， 与所述第二进气 通道（6)相对应的周向通气槽（61 ) 的宽度沿气流方向渐缩。
9、 如权利要求 8所述的气体分配装置， 其特征在于， 所述第二气体分 配板（6) 中径向通气槽 (62) 的宽度沿第二气体分配板（6)径向方向向外 逐渐增力口。
10、 如权利要求 9所述的气体分配装置， 其特征在于， 所述第二气体分 配板（6)中位于同一径向通气槽 (61 )的各轴向通孔（63 )的最小横截面积 沿第二气体分配板（6)径向方向向外依次增加。 11、 如权利要求 10所述的气体分配装置， 其特征在于， 所述第二气体 分配板（6)中位于同一径向通气槽 (61 )的各轴向通孔（63)的密度沿第二 气体分配板（6)径向方向向外依次增大。
12、 如权利要求 11 所述的气体分配装置， 其特征在于， 所述第二气体 分配板（6) 包括多条周向通气槽 (61 ), 这些周向通气槽 (61 ) 的宽度沿第 二气体分配板 (6)径向方向向外依次增加。
13、 一种等离子体处理设备， 其特征在于， 包括如权利要求 1至 12任 一项所述的气体分配装置。
14、 如权利要求 13 所述的等离子体处理设备， 其特征在于， 其为等离 子体刻蚀设备或者等离子体淀积设备。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8888949B2 (en) 2008-01-14 2014-11-18 Beijing Nmc Co., Ltd. Plasma processing equipment and gas distribution apparatus thereof
US10221484B2 (en) 2007-10-16 2019-03-05 Novellus Systems, Inc. Temperature controlled showerhead
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10400333B2 (en) 2011-03-04 2019-09-03 Novellus Systems, Inc. Hybrid ceramic showerhead
US10494717B2 (en) 2015-05-26 2019-12-03 Lam Research Corporation Anti-transient showerhead
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011009002A2 (en) * 2009-07-15 2011-01-20 Applied Materials, Inc. Flow control features of cvd chambers
CN102280337B (zh) * 2011-06-03 2014-04-16 星弧涂层新材料科技（苏州）股份有限公司 反应离子刻蚀设备及方法
CN102437002B (zh) * 2011-11-29 2015-12-09 中国科学院微电子研究所 一种用于进气结构的匀气盘
US8916480B2 (en) * 2011-12-07 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical vapor deposition film profile uniformity control
JP5943789B2 (ja) * 2012-09-21 2016-07-05 三菱電機株式会社 大気圧プラズマ成膜装置
US9536710B2 (en) * 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
CN103436856A (zh) * 2013-08-01 2013-12-11 光垒光电科技（上海）有限公司 反应腔室
CN105529237B (zh) * 2014-10-23 2018-05-01 中微半导体设备(上海)有限公司 气体导流环、气体供应装置及等离子体处理装置
KR101698433B1 (ko) * 2015-04-30 2017-01-20 주식회사 에이씨엔 기상식각 및 세정을 위한 플라즈마 장치
CN114551206A (zh) * 2015-12-04 2022-05-27 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
CN106935530B (zh) * 2015-12-31 2020-04-17 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀光刻胶装置
CN108262575A (zh) * 2017-01-04 2018-07-10 珠海格力电器股份有限公司 一种导热板及电水壶
CN109831866B (zh) * 2017-11-23 2023-10-20 核工业西南物理研究院 一种双环电极共面放电等离子体发生装置
CN110273143B (zh) * 2018-03-16 2021-08-13 北京北方华创微电子装备有限公司 工艺腔室及半导体加工设备
CN108807127B (zh) * 2018-06-01 2020-03-31 北京北方华创微电子装备有限公司 上电极组件、反应腔室以及原子层沉积设备
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CN111613508A (zh) * 2019-02-25 2020-09-01 北京北方华创微电子装备有限公司 进气装置及反应腔室
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CN112908821B (zh) * 2019-12-04 2023-03-31 中微半导体设备(上海)股份有限公司 一种实现均匀排气的双工位处理器及其排气方法
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CN116121730B (zh) * 2023-04-12 2023-09-01 江苏鹏举半导体设备技术有限公司 固态前驱体源升华装置
CN118326521B (zh) * 2024-06-13 2024-09-24 瑶光半导体(浙江)有限公司 激光退火设备的气体保护装置及激光退火设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039832A (ja) * 1983-08-12 1985-03-01 Fujitsu Ltd プラズマ処理装置
CN1367933A (zh) * 1999-06-30 2002-09-04 兰姆研究公司 用于半导体处理的气体分配设备
CN1538507A (zh) * 2003-04-14 2004-10-20 华邦电子股份有限公司 半导体机台气体反应室的气体配送系统及方法
US20050077010A1 (en) * 1998-04-15 2005-04-14 Applied Materials, Inc. System and method for gas distribution in a dry etch process
US20060021701A1 (en) * 2004-07-29 2006-02-02 Asm Japan K.K. Dual-chamber plasma processing apparatus
CN1795530A (zh) * 2003-05-22 2006-06-28 艾克塞利斯技术公司 等离子体装置,用于等离子体装置的气体分布组件及其方法
US20080178805A1 (en) * 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046029A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体製造装置
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
JPH02198138A (ja) * 1989-01-27 1990-08-06 Nec Corp 平行平板型ドライエッチング装置の電極板
JPH06349761A (ja) * 1993-06-03 1994-12-22 Kokusai Electric Co Ltd 半導体製造装置用ガス供給ノズル及び半導体製造装置
JP3342118B2 (ja) * 1993-06-29 2002-11-05 東京エレクトロン株式会社 処理装置
EP1198610A4 (en) * 1999-05-14 2004-04-07 Univ California PLASMA POWER GENERATING DEVICE WITH A LARGE PRESSURE RANGE AT LOW TEMPERATURES
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2001274107A (ja) * 2000-03-28 2001-10-05 Nec Kyushu Ltd 拡散炉
WO2002058126A1 (fr) * 2001-01-22 2002-07-25 Tokyo Electron Limited Dispositif et procede de traitement
JP3982678B2 (ja) * 2002-02-27 2007-09-26 東京エレクトロン株式会社 プラズマ処理装置
JP2004349375A (ja) * 2003-05-21 2004-12-09 Nec Kansai Ltd ドライエッチング装置のガス分散板
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8876024B2 (en) * 2008-01-10 2014-11-04 Applied Materials, Inc. Heated showerhead assembly
CN101488446B (zh) * 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其气体分配装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039832A (ja) * 1983-08-12 1985-03-01 Fujitsu Ltd プラズマ処理装置
US20050077010A1 (en) * 1998-04-15 2005-04-14 Applied Materials, Inc. System and method for gas distribution in a dry etch process
CN1367933A (zh) * 1999-06-30 2002-09-04 兰姆研究公司 用于半导体处理的气体分配设备
CN1538507A (zh) * 2003-04-14 2004-10-20 华邦电子股份有限公司 半导体机台气体反应室的气体配送系统及方法
CN1795530A (zh) * 2003-05-22 2006-06-28 艾克塞利斯技术公司 等离子体装置,用于等离子体装置的气体分布组件及其方法
US20060021701A1 (en) * 2004-07-29 2006-02-02 Asm Japan K.K. Dual-chamber plasma processing apparatus
US20080178805A1 (en) * 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10221484B2 (en) 2007-10-16 2019-03-05 Novellus Systems, Inc. Temperature controlled showerhead
US10584415B2 (en) 2007-10-16 2020-03-10 Novellus Systems, Inc. Temperature controlled showerhead
US8888949B2 (en) 2008-01-14 2014-11-18 Beijing Nmc Co., Ltd. Plasma processing equipment and gas distribution apparatus thereof
US9540732B2 (en) 2008-01-14 2017-01-10 Beijing Nmc Co., Ltd. Plasma processing equipment and gas distribution apparatus thereof
US10400333B2 (en) 2011-03-04 2019-09-03 Novellus Systems, Inc. Hybrid ceramic showerhead
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10494717B2 (en) 2015-05-26 2019-12-03 Lam Research Corporation Anti-transient showerhead

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CN101488446A (zh) 2009-07-22
CN101488446B (zh) 2010-09-01
US20140332605A1 (en) 2014-11-13
US8888949B2 (en) 2014-11-18
US9540732B2 (en) 2017-01-10

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