WO2009084318A1 - 高純度ランタン、高純度ランタンからなるスパッタリングターゲット及び高純度ランタンを主成分とするメタルゲート膜 - Google Patents
高純度ランタン、高純度ランタンからなるスパッタリングターゲット及び高純度ランタンを主成分とするメタルゲート膜 Download PDFInfo
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- WO2009084318A1 WO2009084318A1 PCT/JP2008/069854 JP2008069854W WO2009084318A1 WO 2009084318 A1 WO2009084318 A1 WO 2009084318A1 JP 2008069854 W JP2008069854 W JP 2008069854W WO 2009084318 A1 WO2009084318 A1 WO 2009084318A1
- Authority
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- WIPO (PCT)
- Prior art keywords
- lanthanum
- less
- wtppm
- purity
- highly pure
- Prior art date
Links
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 229910052746 lanthanum Inorganic materials 0.000 title claims abstract description 107
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 title claims abstract description 32
- 238000005477 sputtering target Methods 0.000 title claims abstract description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- 229910052742 iron Inorganic materials 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 12
- 230000002285 radioactive effect Effects 0.000 claims abstract description 12
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 12
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 25
- 239000003870 refractory metal Substances 0.000 claims description 11
- 150000003624 transition metals Chemical class 0.000 claims description 10
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 9
- 239000000463 material Substances 0.000 abstract description 29
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 26
- 239000002994 raw material Substances 0.000 description 19
- 238000010894 electron beam technology Methods 0.000 description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 13
- 229910017604 nitric acid Inorganic materials 0.000 description 13
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005554 pickling Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000009461 vacuum packaging Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052767 actinium Inorganic materials 0.000 description 1
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002604 lanthanum compounds Chemical class 0.000 description 1
- 229940057995 liquid paraffin Drugs 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B59/00—Obtaining rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/16—Remelting metals
- C22B9/22—Remelting metals with heating by wave energy or particle radiation
- C22B9/228—Remelting metals with heating by wave energy or particle radiation by particle radiation, e.g. electron beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
Definitions
- the present invention relates to a high purity lanthanum, a sputtering target made of high purity lanthanum, and a metal gate film containing high purity lanthanum as a main component.
- Lanthanum (La) is contained in rare earth elements, but is contained in the earth's crust as a mixed complex oxide as a mineral resource. Since rare earth elements were separated from relatively rare (rare) minerals, they were named as such, but they are not rare when viewed from the entire crust.
- Lanthanum is a white metal having an atomic number of 57 and an atomic weight of 138.9, and has a double hexagonal close-packed structure at room temperature. The melting point is 921 ° C., the boiling point is 3500 ° C., and the density is 6.15 g / cm 3.
- the surface is oxidized in the air and gradually dissolved in water. Soluble in hot water and acid. There is no ductility, but there is slight malleability.
- the resistivity is 5.70 ⁇ 10 ⁇ 6 ⁇ cm. It burns at 445 ° C or higher to become oxide (La 2 O 3 ) (see Physics and Chemistry Dictionary).
- oxide La 2 O 3
- lanthanum is also trivalent. Recently, lanthanum is a metal that is attracting attention because of research and development as an electronic material such as a metal gate material and a high dielectric constant material (High-k).
- lanthanum metal Since lanthanum metal has a problem that it is easily oxidized during refining, it is a material that is difficult to achieve high purity, and no high-purity product exists. In addition, when lanthanum metal is left in the air, it oxidizes in a short time and turns black, so that there is a problem that handling is not easy. Recently, thinning is required as a gate insulating film in next-generation MOSFETs, but in SiO 2 that has been used as a gate insulating film so far, leakage current due to a tunnel effect increases and normal operation has become difficult. .
- HfO 2 , ZrO 2 , Al 2 O 3 , La 2 O 3 having a high dielectric constant, high thermal stability, and a high energy barrier against holes and electrons in silicon are proposed.
- La 2 O 3 is highly evaluated, electrical characteristics have been investigated, and research reports as a gate insulating film in next-generation MOSFETs have been made (see Non-Patent Document 1).
- Non-Patent Document 1 a La 2 O 3 film is the subject of research, and the characteristics and behavior of the La element are not particularly mentioned.
- lanthanum lanthanum oxide
- the lanthanum metal itself exists as a sputtering target material
- lanthanum is a material that is easily bonded to oxygen and difficult to remove oxygen, but the present invention has a purity of 4N or more excluding rare earth elements and gas components, and aluminum in lanthanum High-purity lanthanum in which iron and copper are each 100 wtppm or less can be obtained.
- the above high-purity lanthanum is a novel substance, and the present invention includes this.
- a LaOx film is mainly formed.
- an arbitrary film is formed in order to increase the degree of freedom of film formation.
- High purity lanthanum metal is required.
- the present invention can provide a material suitable for this.
- rare earth elements contained in lanthanum include Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
- Ce approximates La
- Ce it is not easy to reduce Ce.
- these rare earth elements have similar properties, if the total rare earth elements are less than 1000 wtppm, there is no particular problem when used as an electronic component material.
- the lanthanum of the present invention is allowed to contain rare earth elements at this level.
- the total amount of rare earth elements other than lanthanum is preferably 100 wtppm or less, more preferably 10 wtppm or less, and still more preferably the content of each rare earth element is 1 wtppm or less. It can be said.
- the present invention can achieve these and includes them.
- C, N, O, S, and H exist as gas components. These may exist as single elements, but many may exist in the form of compounds (CO, CO 2 , SO 2 etc.) or compounds with constituent elements. Since these gas component elements have a small atomic weight and atomic radius, even if they are present as impurities, they do not significantly affect the properties of the material unless they are contained in large amounts. Therefore, when displaying the purity, it is usual to use the purity excluding the gas component. In this sense, the purity of the lanthanum of the present invention is such that the purity excluding gas components is 4N or more. Lanthanum refined to this level will also reduce the gas components accordingly.
- the oxygen contained in the lanthanum is 2000 wtppm or more, and in some cases 5000 wtppm or less, it may not be a big problem.
- the present invention is not intended for an oxygen content of around 5000 wtppm. That is, it is needless to say that it is desirable that oxygen be as low as possible. In the present invention, this is achieved with the aim of 1500 wtppm or less, and further less than 1000 wtppm.
- the high purity lanthanum of the present invention has a purity of 4N or more excluding rare earth elements and gas components, aluminum, iron and copper in the lanthanum are each 100 wtppm or less, and the oxygen content is 1500 wtppm or less, alkali metal and alkali
- a high-purity lanthanum characterized in that each element of earth metal is 1 wtppm or less, each of transition metal and refractory metal other than the above is 10 wtppm or less, and each of the radioactive elements is 10 wtppb or less.
- the lanthanum obtained as described above is dissolved in a vacuum and solidified into an ingot.
- This ingot can be further cut into a predetermined size and made into a sputtering target through a polishing process.
- a sputtering target made of high-purity lanthanum having a purity excluding rare earth elements and gas components of 4N or higher, and aluminum, iron and copper in the lanthanum being 100 wtppm or less.
- the purity excluding rare earth elements and gas components is 4N or more
- the oxygen content is 1500 wtppm or less
- each element of alkali metal and alkaline earth metal is 1 wtppm or less
- each of transition metals and refractory metals other than the above A high-purity lanthanum sputtering target having 10 wtppm or less of each element and 10 wtppb or less of each radioactive element can be obtained.
- the purity of the substrate excluding rare earth elements and gas components is 4N or more, and aluminum, iron and copper in lanthanum are each 100 wtppm or less.
- the metal gate film mainly composed of lanthanum, and the purity excluding rare earth elements and gas components is 4N or more, the oxygen content is 1500wtppm or less, each element of alkali metal and alkaline earth metal is 1wtppm or less, other than the above It is possible to obtain a metal gate film mainly composed of high-purity lanthanum in which each element of transition metal and refractory metal is 10 wtppm or less and each of the radioactive elements is 10 wtppb or less.
- These sputtering target and metal gate film are both novel substances, and the present invention includes them.
- the present invention has an excellent effect that it can provide a sputtering target composed of high-purity lanthanum, high-purity material lanthanum, and a metal gate thin film mainly composed of high-purity material lanthanum.
- a raw material of crude lanthanum oxide having a purity excluding gas components and a purity of 3N or less can be used as a lanthanum raw material for high purity.
- These raw materials include, as main impurities, Li, Na, K, Ca, Mg, Al, Si, Ti, Fe, Cr, Ni, Mn, Mo, Ce, Pr, Nd, Sm, Ta, W, gas components (N, O, C, H) and the like are contained. Examples of commercially available products are shown in Tables 1 and 2.
- Aluminum (Al) and copper (Cu) contained in lanthanum are often used in alloy materials such as substrates, sources, and drains in semiconductors, and if they are contained in a small amount in the gate material, it causes malfunction. Moreover, since iron (Fe) contained in lanthanum is easily oxidized, it causes spatter failure when used as a target. Further, when oxidized after being sputtered even if not oxidized in the target, the volume increases. This is a particular problem because it swells and easily causes malfunctions such as defective insulation and causes malfunctions. This needs to be reduced.
- the raw material for soot contains a large amount of Fe and Al. Further, Cu is often subjected to contamination from a water-cooled member that is used again by producing a crude metal by reducing it from chloride or fluoride. In many cases, these impurity elements exist in the form of oxides in the raw material lanthanum. In particular, Fe has various forms such as metals, suboxides, and oxides, and it is necessary to make the raw material surface into a complete oxide form by pickling with a solution of nitric acid or the like. is there.
- the lanthanum melting raw material in the furnace is irradiated over a wide range with a low-power electron beam, so that the metal lanthanum reduces the Al, Fe, and Cu oxides to form the Al, Fe that has become the metal.
- Cu metal is agglomerated above and below the molten ingot due to the specific gravity difference. Thereby, high-purity lanthanum can be obtained from the central part of the ingot.
- the alkali metal element is lithium, sodium, potassium, rubidium, cesium, francium, and the alkaline earth metal element is calcium, strontium, barium, radium. These are electrically positive, for example, lanthanum. Is used for electronic components, those having a small atomic radius can easily move through the device and destabilize the device characteristics. If it is trace amount, it will not be a problem in particular, but if it increases, the problem becomes remarkable. Therefore, when used as an electronic component material, it can be said that each content is desirably 1 wtppm or less. Since many of these elements have high vapor pressure, they are volatilized by electron beam melting and can be removed efficiently.
- the transition metal element is a metal belonging to Groups 3 to 11 of the periodic table. Typical examples include titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, and zinc. These cause an increase in leakage current and cause a decrease in breakdown voltage. The same applies to refractory metals or heavy metals. Therefore, when used as an electronic component material, it is preferable that each of transition metal and refractory metal or heavy metal other than those described above is 10 wtppm or less, and it is preferable to use as little as possible.
- radioactive elements are uranium, actinium, thorium, lead, and bismuth, but a soft error occurs that the stored charge of the memory cell is inverted. Therefore, it is necessary to reduce these amounts and to limit the ⁇ dose generated from these elements.
- the total amount is acceptable up to 20 wtppb, but it should be as small as possible.
- each element can be analyzed and managed individually, and it is desirable that each of these elements is 10 wtppb or less.
- the ⁇ dose was 0.01 cph / cm 2 or less.
- rare earth elements are excluded from high-purity lanthanum because, in the production of high-purity lanthanum, other rare earths themselves are similar in chemical characteristics to lanthanum, so that it is technically very easy to remove them. This is because it is difficult, and from the closeness of this characteristic, even if it is mixed as an impurity, it does not cause a significant change in characteristic. Under such circumstances, the contamination of other rare earths is tolerated to some extent, but it is needless to say that it is desirable to reduce the amount of lanthanum itself in order to improve the characteristics.
- the reason why the purity excluding the gas component is 4N or more is that it is difficult to remove the gas component, and counting this does not serve as a measure for improving the purity. In general, the presence of some amount is harmless compared to other impurity elements.
- oxygen is likely to be mixed, and when it exceeds 5000 wtppm, a big problem occurs.
- a splash caused by oxygen occurs during sputtering, and uniform film formation cannot be performed.
- the presence of oxide is not preferable because it causes generation of particles and nodules.
- it since it has a considerable influence on the properties of the metal gate film described later, it goes without saying that it is necessary to reduce it as much as possible. Therefore, it goes without saying that it is desirable to strictly control oxygen.
- it is 1500 wtppm or less, more preferably less than 1000 wtppm.
- a thin film of an electronic material such as a gate insulating film or a thin film for a metal gate
- most of them are performed by sputtering, which is an excellent method for forming a thin film. Therefore, it is effective to produce a high-purity lanthanum sputtering target using the lanthanum ingot.
- the target can be manufactured by normal processing such as forging, rolling, cutting, and finishing (polishing). In particular, the manufacturing process is not limited and can be arbitrarily selected.
- the present invention has a purity excluding rare earth elements and gas components of 4N or more, oxygen content of 1500 wtppm or less, alkali metal elements of 1 wtppm or less, aluminum, iron and copper of 100 wtppm or less, other transitions
- the present invention provides a high-purity lanthanum sputtering target in which each metal element is 100 wtppm or less and each of the radioactive elements is 10 wtppb or less. When the target is manufactured, the high-purity lanthanum ingot is cut into a predetermined size, which is cut and polished.
- high purity lanthanum can be formed on the substrate by sputtering using this high purity target.
- the purity excluding rare earth elements and gas components is 4N or more, and the oxygen content is 1500 wtppm or less, and further less than 1000 wtppm.
- Each element of alkali metal and alkaline earth metal is 1 wtppm or less, aluminum, iron and copper are 100 wtppm or less, other transition metal and refractory metal elements are 10 wtppm or less, and radioactive elements are 10 wtppb or less respectively.
- a metal gate film mainly composed of pure lanthanum can be formed on the substrate. The film on the substrate reflects the composition of the target, and a high-purity lanthanum film can be formed.
- the use as a metal gate film can be used as the composition of the high-purity lanthanum itself, but it can also be mixed with other gate materials or formed as an alloy or compound. In this case, it can be achieved by simultaneous sputtering with another gate material target or sputtering using a mosaic target.
- the present invention includes these.
- the content of impurities varies depending on the amount of impurities contained in the raw material, but by adopting the above method, each impurity can be adjusted within the above numerical range.
- the present invention provides a technology capable of efficiently and stably providing the high-purity lanthanum obtained as described above, a sputtering target composed of a high-purity material lanthanum, and a metal gate thin film mainly composed of the high-purity material lanthanum. is there.
- Example 1 Commercial products shown in Table 1 were used as raw materials for the lanthanum to be treated. Since lanthanum itself is a material that has recently attracted attention, there is a fact that the commercial products of the material vary in purity and the quality is not constant. Commercial products are one of them.
- the commercial lanthanum used in Example 1 is composed of a large number of lumps of about 10 to 20 mm. Because lanthanum is very easily oxidized, it is soaked in oil (liquid paraffin). For this reason, acetone was removed by degreasing or ultrasonic cleaning as necessary.
- the rare earth elements were Ce: 4.7 wtppm, Pr: 1.5 wtppm, Nd: 21 wtppm :, Sm: ⁇ 0.05 wtppm. Although these have a residual amount, it is understood that the rare earth elements as a whole are 50 wtppm or less, and are greatly reduced as compared with the raw materials. This level of content does not impair the properties of lanthanum.
- the lanthanum ingot thus obtained was hot-pressed as necessary, further machined and polished to obtain a disk-shaped target of ⁇ 140 ⁇ 14t.
- the weight of this target was 1.42 kg.
- This is further bonded to a backing plate to obtain a sputtering target.
- a high-purity lanthanum sputtering target having the above component composition could be obtained.
- this target since this target has high oxidizability, it can be said that it is preferable to store or transport it by vacuum packing.
- Example 2 Commercial products shown in Table 2 were used as raw materials for the lanthanum to be treated.
- the commercially available lantern used in Example 2 is a 120 mm square ⁇ 30 mmt plate.
- the weight of one sheet was 2.0 kg to 3.3 kg, and 12 sheets of this, a total of 24 kg of raw materials were used. Since these plate-like lanthanum raw materials are very easily oxidized, they are vacuum-packed with aluminum. Next, it is taken out from the vacuum pack, immersed in 3 liters of nitric acid (5 times 70% nitric acid) at a ratio of 10 liters of nitric acid solution to 1 kg of lanthanum for 5 minutes, then washed with water and in acetone for 30 minutes. Ultrasonic washed.
- Li ⁇ 0.1 wtppm, Na ⁇ 0.1 wtppm, K ⁇ 0.1 wtppm, Ca ⁇ 0.1 wtppm, Mg ⁇ 0.1 wtppm, Si ⁇ 1 wtppm, Ti ⁇ 0.1 wtppm, Cr ⁇ 0.1 wtppm, Ni ⁇ 0.1 wtppm, Mn ⁇ 0.1 wtppm, Mo ⁇ 0.1 wtppm, Ta ⁇ 1 wtppm, W ⁇ 0.1 wtppm, U ⁇ 0.001 wtppm, Th ⁇ 0.001 wtppm.
- each element of alkali metal and alkaline earth metal is 1 wtppm or less
- each of transition metal and refractory metal other than the above is 10 wtppm or less
- each radioactive element is 10 wtppb or less.
- the rare earth elements were Ce: 6.8 wtppm, Pr: 2.6 wtppm, Nd: 34 wtppm: Sm: ⁇ 0.1 wtppm. Although these have a residual amount, it is understood that the rare earth elements as a whole are 50 wtppm or less, and are greatly reduced compared to the raw materials. This level of content does not impair the properties of lanthanum.
- the lanthanum ingot thus obtained was hot-pressed as necessary, further machined and polished to obtain a disk-shaped target of ⁇ 140 ⁇ 14t. This is further bonded to a backing plate to obtain a sputtering target. Thereby, a high-purity lanthanum sputtering target having the above component composition can be obtained. In addition, since this target has high oxidizability, it is appropriate to store or transport it by vacuum packing.
- the high purity lanthanum obtained by the present invention, the sputtering target composed of the high purity material lanthanum and the metal gate thin film mainly composed of the high purity material lanthanum are used as electronic materials arranged close to the silicon substrate. Since the function is not deteriorated or disturbed, it is useful as a material for a gate insulating film or a metal gate thin film.
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Abstract
Description
希土類元素は一般に酸化数3の化合物が安定であるが、ランタンも3価である。最近ではランタンをメタルゲート材料、高誘電率材料(High-k)等の、電子材料として研究開発が進められており、注目されている金属である。
最近、次世代のMOSFETにおけるゲート絶縁膜として薄膜化が要求されているが、これまでゲート絶縁膜として使用されてきたSiO2では、トンネル効果によるリーク電流が増加し、正常動作が難しくなってきた。
このため、それに変わるものとして、高い誘電率、高い熱的安定性、シリコン中の正孔と電子に対して高いエネルギー障壁を有するHfO2、ZrO2、Al2O3、La2O3が提案されている。特に、これらの材料の中でも、La2O3の評価が高く、電気的特性を調査し、次世代のMOSFETにおけるゲート絶縁膜としての研究報告がなされている(非特許文献1参照)。しかし、この特許文献の場合に、研究の対象となっているのは、La2O3膜であり、La元素の特性と挙動については、特に触れてはいない。
徳光永輔、外2名著、「High-k ゲート絶縁膜用酸化物材料の研究」電気学会電子材料研究会資料、Vol.6-13、Page.37-41、2001年9月21日発行
MOSFETにおけるゲート絶縁膜として利用する場合に、形成するのは主としてLaOx膜であるが、このような膜を形成する場合には、任意の膜を形成するという、膜形成の自由度を増すために、純度の高いランタン金属が必要となる。本願発明は、これに適合する材料を提供することができる。
しかしながら、これらの希土類元素は、性質が近似しているが故に、希土類元素合計で1000wtppm未満であれば、電子部品材料としての使用に際し、特に問題となるものでない。
この意味で、本願発明のランタンの純度は、ガス成分を除く純度が4N以上とするものである。このレベルに精製したランタンは、ガス成分もそれにつれて低減する。例えば、ランタンに含有する酸素が2000wtppm以上、場合によっては5000wtppm以下であれば、大きな問題とはならない場合がある。
しかしながら、本願発明は、5000wtppm近傍の酸素含有量を目途とするものではないことは理解されるべきことである。すなわち、酸素もできるだけ少ない方が望ましいことは言うまでもない。本願発明においては、1500wtppm以下、さらには1000wtppm未満とすることを目途とし、これを達成するものである。
また同様に、希土類元素及びガス成分を除いた純度が4N以上、酸素含有量が1500wtppm以下、アルカリ金属及びアルカリ土類金属の各元素がそれぞれ1wtppm以下、上記以外の遷移金属及び高融点金属の各元素がそれぞれ10wtppm以下、放射性元素がそれぞれ10wtppb以下である高純度ランタンスパッタリングターゲットを得ることができる。
微量であれば、特に問題とはならないが、多くなるとその問題が顕著になる。したがって、電子部品材料として、使用する場合には、それぞれの含有量が1wtppm以下とすることが望ましいと言える。これらの元素の多くは、蒸気圧が高いので、電子ビーム溶解により、揮散するので、効率良く除去できる。
総量としては、20wtppbまでの混入までは許容できるが、できるだけ少ない方が良い。上記の通り、それぞれの元素は個々に分析及び管理することができ、これらの元素については、それぞれ10wtppb以下とすることが望ましい。
本願発明のターゲットのα線量をガスフォロー比例計数管方式の測定装置を用いて測定した結果、α線量は0.01cph/cm2以下であった。
このような事情から、ある程度、他の希土類の混入は黙認されるが、ランタン自体の特性を向上させようとする場合は、少ないことが望ましいことは、言うまでもない。
また、ガス成分を除いた純度が4N以上とするのは、ガス成分は除去が難しく、これをカウントすると純度の向上の目安とならないからである。また、一般に他の不純物元素に比べ多少の存在は無害である場合が多いからである。
また、酸化物が存在するとパーティクルやノジュール発生の原因となるので、好ましくない。また、後述するメタルゲート膜の性質に影響を少なからず与えるので、極力低減させる必要があることは言うまでもない。したがって、酸素については、厳重に制御することが望ましいことは言うまでもない。好ましくは、1500wtppm以下、さらに好ましくは1000wtppm未満とするのが良い。
ターゲットの製造は、鍛造・圧延・切削・仕上げ加工(研磨)等の、通常の加工により製造することができる。特に、その製造工程に制限はなく、任意に選択することができる。
処理するランタンの原料として表1に示す市販品を用いた。ランタンそのものは、最近注目されている材料であるため、素材の市販品は、その純度もまちまちであり、品位が一定しないという実情がある。市販品はその内の一つである。
本実施例1で使用した市販品のランタンは、10~20mm程度の多数の塊状物からなる。ランタンが非常に酸化され易い物質のため、オイル(流動パラフィン)漬けされている。このため、脱脂又は必要に応じて超音波洗浄し、アセトンを除去した。
硝酸が残留するとEB(電子ビーム)溶解インゴットの酸素が上昇し、また水分が残留すると、EB炉中の真空度が低下するので、硝酸及び水分の残液極力少なくすることが望ましい。この硝酸処理により、ランタン原料に酸化膜を形成した。酸洗後の原料は6.86kgとなった。
また、酸素は440wtppmであり、これも本願発明の、好ましい条件である1500wtppm以下、さらに好ましい条件である1000wtppm未満を達成していた。
なお、参考までに、希土類元素である、Ce:4.7wtppm、Pr:1.5wtppm、Nd:21wtppm:、Sm:<0.05wtppmであった。これらは、残存量はあるが、希土類元素全体で50wtppm以下であり、原料から比べて大きく減少しているのが分かる。この程度の含有量は、ランタンの特性を損なうものではない。
処理するランタンの原料として表2に示す市販品を用いた。本実施例2で使用した市販品のランタンは、120mm角×30mmtの板状物からなる。1枚の重量は、2.0kg~3.3kgであり、これを12枚、合計で24kgの原料を使用した。これらの板状のランタン原料は非常に酸化され易い物質のため、アルミニウムの真空パックされていた。
次に、真空パックから取り出し、硝酸3規定(70%硝酸の5倍)を使用して、ランタン1kgに対して硝酸溶液10リットルの割合で、5分間浸漬した後、水洗及びアセトン中で30分間超音波洗浄した。硝酸が残留するとEB(電子ビーム)溶解インゴットの酸素が上昇し、また水分が残留すると、EB炉中の真空度が低下するので、硝酸及び水分の残液極力少なくすることが望ましい。これは、実施例1と同様の理由による。
この硝酸処理により、ランタン原料に酸化膜を形成した。酸洗後の原料は、合計で23.78kgとなった。
以上によって、高純度ランタンインゴット22.54kgを製造することができた。このようにして得た高純度ランタンの分析値を表2に示す。表2に示すように、ランタン中のAl:5.5wtppm、Fe:3.5wtppm、Cu:2.8wtppmであり、それぞれ本願発明の条件である100wtppm以下の条件を達成していることが確認できた。また、酸素は550wtppmであり、これも本願発明の、好ましい条件である1500wtppm以下、さらに好ましい条件である1000wtppm未満を達成していた。
また、アルカリ金属及びアルカリ土類金属の各元素が、それぞれ1wtppm以下、上記以外の遷移金属及び高融点金属の各元素が、それぞれ10wtppm以下、放射性元素が、それぞれ10wtppb以下とする本願発明の好ましい条件も全て達成していた。
なお、参考までに、希土類元素である、Ce:6.8wtppm、Pr:2.6wtppm、Nd:34wtppm:、Sm:<0.1wtppmであった。これらは、残存量はあるが、希土類元素全体で50wtppm以下であり、原料から比べて大きく減少しているのが分かる。この程度の含有量は、ランタンの特性を損なうものではない。
Claims (6)
- 希土類元素及びガス成分を除いた純度が4N以上であり、ランタン中のアルミニウム、鉄及び銅が、それぞれ100wtppm以下であることを特徴とする高純度ランタン。
- 希土類元素及びガス成分を除いた純度が4N以上であり、ランタン中のアルミニウム、鉄及び銅がそれぞれ100wtppm以下、かつ酸素含有量が1500wtppm以下、アルカリ金属及びアルカリ土類金属の各元素がそれぞれ1wtppm以下、上記以外の遷移金属及び高融点金属の各元素がそれぞれ10wtppm以下、放射性元素がそれぞれ10wtppb以下であることを特徴とする高純度ランタン。
- 希土類元素及びガス成分を除いた純度が4N以上であり、ランタン中のアルミニウム、鉄及び銅が、それぞれ100wtppm以下であることを特徴とする高純度ランタンからなるスパッタリングターゲット。
- 希土類元素及びガス成分を除いた純度が4N以上であり、ランタン中のアルミニウム、鉄及び銅がそれぞれ100wtppm以下、かつ酸素含有量が1500wtppm以下、アルカリ金属及びアルカリ土類金属の各元素がそれぞれ1wtppm以下、上記以外の遷移金属及び高融点金属の各元素がそれぞれ10wtppm以下、放射性元素がそれぞれ10wtppb以下であることを特徴とする高純度ランタンからなるスパッタリングターゲット。
- 希土類元素及びガス成分を除いた純度が4N以上であり、ランタン中のアルミニウム、鉄及び銅がそれぞれ100wtppm以下であることを特徴とする高純度ランタンを主成分とするメタルゲート膜。
- 希土類元素及びガス成分を除いた純度が4N以上であり、ランタン中のアルミニウム、鉄及び銅がそれぞれ100wtppm以下、かつ酸素含有量が1500wtppm以下、アルカリ金属及びアルカリ土類金属の各元素がそれぞれ1wtppm以下、上記以外の遷移金属及び高融点金属の各元素がそれぞれ10wtppm以下、放射性元素がそれぞれ10wtppb以下であることを特徴とする高純度ランタンを主成分とするメタルゲート膜。
Priority Applications (6)
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US12/810,319 US8980169B2 (en) | 2007-12-28 | 2008-10-31 | High-purity lanthanum, sputtering target comprising high-purity lanthanum, and metal gate film mainly comprising high-purity lanthanum |
KR1020107013974A KR101224787B1 (ko) | 2007-12-28 | 2008-10-31 | 고순도 란탄, 고순도 란탄으로 이루어지는 스퍼터링 타겟 및 고순도 란탄을 주성분으로 하는 메탈 게이트막 |
AU2008344685A AU2008344685B2 (en) | 2007-12-28 | 2008-10-31 | Highly pure lanthanum, sputtering target comprising highly pure lanthanum, and metal gate film mainly composed of highly pure lanthanum |
JP2009547950A JP5558111B2 (ja) | 2007-12-28 | 2008-10-31 | 高純度ランタンの製造方法 |
EP08866745A EP2224024A4 (en) | 2007-12-28 | 2008-10-31 | HIGH PURITY LANTHANE, CATHODIC SPUTTER TARGET COMPRISING HIGH PURITY LANTHANE AND METAL GRID FILM COMPRISING HIGHLY PURETHYLANTANT LANTHANE |
CN200880123161.2A CN101910431B (zh) | 2007-12-28 | 2008-10-31 | 高纯度镧、包含高纯度镧的溅射靶以及以高纯度镧为主成分的金属栅膜 |
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US (1) | US8980169B2 (ja) |
EP (1) | EP2224024A4 (ja) |
JP (1) | JP5558111B2 (ja) |
KR (2) | KR101224787B1 (ja) |
CN (2) | CN104018051A (ja) |
AU (1) | AU2008344685B2 (ja) |
TW (1) | TWI418638B (ja) |
WO (1) | WO2009084318A1 (ja) |
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WO2010113638A1 (ja) | 2009-03-31 | 2010-10-07 | 日鉱金属株式会社 | スパッタリング用ランタンターゲット |
WO2012067061A1 (ja) * | 2010-11-19 | 2012-05-24 | Jx日鉱日石金属株式会社 | 高純度ランタンの製造方法、高純度ランタン、高純度ランタンからなるスパッタリングターゲット及び高純度ランタンを主成分とするメタルゲート膜 |
WO2012099092A1 (ja) | 2011-01-21 | 2012-07-26 | Jx日鉱日石金属株式会社 | 高純度ランタンの製造方法、高純度ランタン、高純度ランタンからなるスパッタリングターゲット及び高純度ランタンを主成分とするメタルゲート膜 |
WO2013047104A1 (ja) * | 2011-09-28 | 2013-04-04 | Jx日鉱日石金属株式会社 | 高純度ランタンの製造方法、高純度ランタン、高純度ランタンからなるスパッタリングターゲット及び高純度ランタンを主成分とするメタルゲート膜 |
US8911600B2 (en) | 2009-11-17 | 2014-12-16 | Jx Nippon Mining & Metals Corporation | Method of storing lanthanum oxide target, and vacuum-sealed lanthanum oxide target |
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EP2298715A4 (en) * | 2008-07-07 | 2011-11-23 | Jx Nippon Mining & Metals Corp | LANTHANE OXIDE SINTERED OBJECT, SPRAYING TARGET COMPRISING THE SINTERED OBJECT, PROCESS FOR PRODUCING THE LANTHANE OXIDE SINTERED OBJECT, AND PROCESS FOR PRODUCING A SPRAYING TARGET USING THE METHOD |
EP2298712B1 (en) * | 2008-07-07 | 2014-10-01 | JX Nippon Mining & Metals Corporation | Sputtering target comprising the sintered object, process for producing the sintered object, and process for producing sputtering target comprising the sintered object |
CN110578061A (zh) * | 2018-06-07 | 2019-12-17 | 湖南稀土金属材料研究院 | 一种高纯稀土金属的电子束熔炼连续铸锭方法 |
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JP5456763B2 (ja) * | 2009-03-31 | 2014-04-02 | Jx日鉱日石金属株式会社 | スパッタリング用ランタンターゲット |
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JP5456913B2 (ja) * | 2011-01-21 | 2014-04-02 | Jx日鉱日石金属株式会社 | 高純度ランタンの製造方法 |
JP2014074228A (ja) * | 2011-01-21 | 2014-04-24 | Jx Nippon Mining & Metals Corp | 高純度ランタンの製造方法、高純度ランタン、高純度ランタンからなるスパッタリングターゲット及び高純度ランタンを主成分とするメタルゲート膜 |
KR20130105921A (ko) | 2011-01-21 | 2013-09-26 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 란탄의 제조 방법, 고순도 란탄, 고순도 란탄으로 이루어지는 스퍼터링 타겟 및 고순도 란탄을 주성분으로 하는 메탈 게이트막 |
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KR101645068B1 (ko) | 2011-01-21 | 2016-08-02 | 제이엑스금속주식회사 | 고순도 란탄의 제조 방법, 고순도 란탄, 고순도 란탄으로 이루어지는 스퍼터링 타겟 및 고순도 란탄을 주성분으로 하는 메탈 게이트막 |
CN103502511A (zh) * | 2011-09-28 | 2014-01-08 | 吉坤日矿日石金属株式会社 | 高纯度镧的制造方法、高纯度镧、包含高纯度镧的溅射靶及以高纯度镧为主要成分的金属栅极膜 |
JP5189229B1 (ja) * | 2011-09-28 | 2013-04-24 | Jx日鉱日石金属株式会社 | 高純度ランタンの製造方法、高純度ランタン、高純度ランタンからなるスパッタリングターゲット及び高純度ランタンを主成分とするメタルゲート膜 |
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Also Published As
Publication number | Publication date |
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EP2224024A1 (en) | 2010-09-01 |
KR101224787B1 (ko) | 2013-01-21 |
JPWO2009084318A1 (ja) | 2011-05-12 |
US8980169B2 (en) | 2015-03-17 |
EP2224024A4 (en) | 2011-03-09 |
US20100272596A1 (en) | 2010-10-28 |
CN101910431A (zh) | 2010-12-08 |
JP5558111B2 (ja) | 2014-07-23 |
AU2008344685B2 (en) | 2012-09-27 |
CN101910431B (zh) | 2015-01-21 |
TW200927948A (en) | 2009-07-01 |
AU2008344685A2 (en) | 2010-08-05 |
KR20100084701A (ko) | 2010-07-27 |
KR20120094154A (ko) | 2012-08-23 |
AU2008344685A1 (en) | 2009-07-09 |
TWI418638B (zh) | 2013-12-11 |
CN104018051A (zh) | 2014-09-03 |
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