WO2009075124A1 - 半導体装置の製造方法および半導体装置 - Google Patents

半導体装置の製造方法および半導体装置 Download PDF

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Publication number
WO2009075124A1
WO2009075124A1 PCT/JP2008/064862 JP2008064862W WO2009075124A1 WO 2009075124 A1 WO2009075124 A1 WO 2009075124A1 JP 2008064862 W JP2008064862 W JP 2008064862W WO 2009075124 A1 WO2009075124 A1 WO 2009075124A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
wafer
surface roughness
activation annealing
manufacturing
Prior art date
Application number
PCT/JP2008/064862
Other languages
English (en)
French (fr)
Inventor
Kazuhiro Fujikawa
Shin Harada
Yasuo Namikawa
Takeyoshi Masuda
Original Assignee
Sumitomo Electric Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries, Ltd. filed Critical Sumitomo Electric Industries, Ltd.
Priority to CA002677412A priority Critical patent/CA2677412A1/en
Priority to US12/526,731 priority patent/US8697555B2/en
Priority to CN2008800047477A priority patent/CN101647093B/zh
Priority to EP08792583A priority patent/EP2117036A4/en
Publication of WO2009075124A1 publication Critical patent/WO2009075124A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Abstract

　熱処理工程においてウェハの表面荒れを十分抑制することにより、当該表面荒れに起因した特性の低下を抑制することが可能な半導体装置の製造方法、および表面荒れに起因した特性の低下が抑制された半導体装置を提供する。 　半導体装置としてのＭＯＳＦＥＴの製造方法は、炭化珪素からなるウェハ３を準備する工程と、ウェハ３を加熱することにより、活性化アニールを実施する活性化アニール工程とを備えている。そして、活性化アニール工程においては、ウェハ３が、ウェハ３とは別の発生源であるＳｉＣ片６１から発生した炭化珪素の蒸気を含む雰囲気中において加熱される。
PCT/JP2008/064862 2007-12-12 2008-08-21 半導体装置の製造方法および半導体装置 WO2009075124A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA002677412A CA2677412A1 (en) 2007-12-12 2008-08-21 Semiconductor device manufacturing method and semiconductor device
US12/526,731 US8697555B2 (en) 2007-12-12 2008-08-21 Method of producing semiconductor device and semiconductor device
CN2008800047477A CN101647093B (zh) 2007-12-12 2008-08-21 制造半导体装置的方法和半导体装置
EP08792583A EP2117036A4 (en) 2007-12-12 2008-08-21 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-320951 2007-12-12
JP2007320951A JP5141227B2 (ja) 2007-12-12 2007-12-12 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
WO2009075124A1 true WO2009075124A1 (ja) 2009-06-18

Family

ID=40755370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064862 WO2009075124A1 (ja) 2007-12-12 2008-08-21 半導体装置の製造方法および半導体装置

Country Status (8)

Country Link
US (1) US8697555B2 (ja)
EP (1) EP2117036A4 (ja)
JP (1) JP5141227B2 (ja)
KR (1) KR20100100585A (ja)
CN (1) CN101647093B (ja)
CA (1) CA2677412A1 (ja)
TW (1) TW200926303A (ja)
WO (1) WO2009075124A1 (ja)

Cited By (2)

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WO2011016392A1 (ja) * 2009-08-04 2011-02-10 昭和電工株式会社 炭化珪素半導体装置の製造方法
EP2477213A1 (en) * 2009-09-08 2012-07-18 Sumitomo Electric Industries, Ltd. Semiconductor device and process for production of semiconductor device

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JP2009231341A (ja) * 2008-03-19 2009-10-08 Ulvac Japan Ltd アニール装置、ＳｉＣ半導体基板の熱処理方法
JP2010034481A (ja) * 2008-07-31 2010-02-12 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置
SG164324A1 (en) * 2009-02-20 2010-09-29 Semiconductor Energy Lab Semiconductor device and manufacturing method of the same
US8735234B2 (en) * 2010-02-18 2014-05-27 Varian Semiconductor Equipment Associates, Inc. Self-aligned ion implantation for IBC solar cells
JP5564682B2 (ja) * 2010-04-28 2014-07-30 学校法人関西学院 半導体素子の製造方法
DE102010033943A1 (de) * 2010-08-11 2012-02-16 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zum Heizen von Halbleitermaterial
KR101926687B1 (ko) * 2011-10-24 2018-12-07 엘지이노텍 주식회사 에피 웨이퍼 제조 장치, 에피 웨이퍼 제조 방법 및 에피 웨이퍼
DE102012003903A1 (de) * 2012-02-27 2013-08-29 Centrotherm Thermal Solutions Gmbh & Co. Kg Verfahren zur thermischen Behandlung von Siliziumcarbidsubstraten
JP2014007310A (ja) * 2012-06-26 2014-01-16 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
US9257283B2 (en) * 2012-08-06 2016-02-09 General Electric Company Device having reduced bias temperature instability (BTI)
JP6093154B2 (ja) * 2012-11-16 2017-03-08 東洋炭素株式会社 収容容器の製造方法
US10403509B2 (en) * 2014-04-04 2019-09-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing
JP6395299B2 (ja) * 2014-09-11 2018-09-26 国立研究開発法人産業技術総合研究所 炭化珪素半導体素子及び炭化珪素半導体素子の製造方法
CN105470119B (zh) * 2015-11-19 2018-09-11 泰科天润半导体科技（北京）有限公司 一种碳化硅器件的正面欧姆接触的加工方法
JP6853621B2 (ja) 2016-03-17 2021-03-31 国立大学法人大阪大学 炭化珪素半導体装置の製造方法
US11189493B2 (en) * 2018-02-19 2021-11-30 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same

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Publication number Priority date Publication date Assignee Title
WO2011016392A1 (ja) * 2009-08-04 2011-02-10 昭和電工株式会社 炭化珪素半導体装置の製造方法
JP2011035257A (ja) * 2009-08-04 2011-02-17 Showa Denko Kk 炭化珪素半導体装置の製造方法
EP2477213A1 (en) * 2009-09-08 2012-07-18 Sumitomo Electric Industries, Ltd. Semiconductor device and process for production of semiconductor device
EP2477213A4 (en) * 2009-09-08 2014-05-14 Sumitomo Electric Industries SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
CN101647093A (zh) 2010-02-10
EP2117036A1 (en) 2009-11-11
JP5141227B2 (ja) 2013-02-13
CN101647093B (zh) 2012-02-01
US8697555B2 (en) 2014-04-15
KR20100100585A (ko) 2010-09-15
CA2677412A1 (en) 2009-06-18
TW200926303A (en) 2009-06-16
EP2117036A4 (en) 2012-02-08
JP2009146997A (ja) 2009-07-02
US20100044721A1 (en) 2010-02-25

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