WO2009072592A1 - 集積型薄膜光電変換装置とその製造方法 - Google Patents

集積型薄膜光電変換装置とその製造方法 Download PDF

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WO2009072592A1
WO2009072592A1 PCT/JP2008/072126 JP2008072126W WO2009072592A1 WO 2009072592 A1 WO2009072592 A1 WO 2009072592A1 JP 2008072126 W JP2008072126 W JP 2008072126W WO 2009072592 A1 WO2009072592 A1 WO 2009072592A1
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layer
rear surface
surface electrode
photoelectric conversion
division line
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PCT/JP2008/072126
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English (en)
French (fr)
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Masahiro Goto
Wataru Yoshida
Toshiaki Sasaki
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Kaneka Corporation
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Priority to AU2008332347A priority Critical patent/AU2008332347B2/en
Priority to EP08856818.3A priority patent/EP2224495A4/en
Priority to JP2009544729A priority patent/JP5160565B2/ja
Priority to KR1020107012563A priority patent/KR101128972B1/ko
Priority to CN200880119525XA priority patent/CN101889351B/zh
Priority to US12/746,486 priority patent/US9252306B2/en
Publication of WO2009072592A1 publication Critical patent/WO2009072592A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　本発明によれば、高い変換特性の積層型薄膜光電変換装置が、高生産性かつ低コストで提供される。 　本発明の集積型薄膜光電変換装置は、透光性基板上に順次積層された透明導電層、レーザ光吸収層、裏面電極層、半導体光電変換層、および透明電極層を含む。レーザ光吸収層は第１種分割線溝で複数の領域に分割され、光電変換層はレーザ光吸収層、裏面電極層、および光電変換層を貫通する第３種分割線溝で複数の光電変換領域に分割され、透明電極層はレーザ光吸収層、裏面電極層、光電変換層、および透明電極層を貫通する第４種分割線溝で複数の透明電極領域に分割され、互いに隣接する光電変換セル間において一方のセルの裏面電極領域は第１種分割線溝、透明導電層、および第３種分割線溝を介して他方のセルの裏面電極領域に電気的に接続されている。 　実施形態１において、裏面電極層は透明導電層、レーザ光吸収層、および裏面電極層を貫通する第２種分割線溝で複数の裏面電極領域に分割されている。
PCT/JP2008/072126 2007-12-05 2008-12-05 集積型薄膜光電変換装置とその製造方法 WO2009072592A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AU2008332347A AU2008332347B2 (en) 2007-12-05 2008-12-05 Multilayer thin-film photoelectric converter and its manufacturing method
EP08856818.3A EP2224495A4 (en) 2007-12-05 2008-12-05 Multilayer thin-film photoelectric converter and its manufacturing method
JP2009544729A JP5160565B2 (ja) 2007-12-05 2008-12-05 集積型薄膜光電変換装置とその製造方法
KR1020107012563A KR101128972B1 (ko) 2007-12-05 2008-12-05 집적형 박막 광전 변환 장치와 그 제조 방법
CN200880119525XA CN101889351B (zh) 2007-12-05 2008-12-05 集成型薄膜光电转换装置及其制造方法
US12/746,486 US9252306B2 (en) 2007-12-05 2008-12-05 Multilayer thin-film photoelectric converter and its manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-314802 2007-12-05
JP2007314802 2007-12-05

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WO2009072592A1 true WO2009072592A1 (ja) 2009-06-11

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US (1) US9252306B2 (ja)
EP (1) EP2224495A4 (ja)
JP (2) JP5160565B2 (ja)
KR (1) KR101128972B1 (ja)
CN (1) CN101889351B (ja)
AU (1) AU2008332347B2 (ja)
WO (1) WO2009072592A1 (ja)

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KR101072170B1 (ko) 2009-11-06 2011-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101091357B1 (ko) 2009-11-03 2011-12-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US20120000506A1 (en) * 2010-07-02 2012-01-05 Samsung Sdi Co., Ltd., Photovoltaic module and method of manufacturing the same
JP2013519925A (ja) * 2010-02-19 2013-05-30 サン−ゴバン グラス フランス 直列接続されたセルを含むエレクトロクロミックグレイジング、およびその製造方法
JP2014507814A (ja) * 2011-07-13 2014-03-27 シンシリコン・コーポレーション 光起電装置及び光起電装置のスクライブ方法
US8822809B2 (en) 2009-10-15 2014-09-02 Lg Innotek Co., Ltd. Solar cell apparatus and method for manufacturing the same

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CN102132419B (zh) * 2009-01-29 2012-12-26 京瓷株式会社 光电转换元件及光电转换模块
US9391226B2 (en) 2011-11-10 2016-07-12 Lei Guo Semiconductor DC transformer
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KR20130109786A (ko) * 2012-03-28 2013-10-08 삼성에스디아이 주식회사 태양전지 및 이의 제조방법
DE102015115030A1 (de) * 2015-09-08 2017-03-09 Von Ardenne Gmbh Verfahren zum Entfernen einer Schicht von einem Substrat und dessen Verwendung
KR102456121B1 (ko) * 2015-12-15 2022-10-17 엘지디스플레이 주식회사 광 제어 장치, 그를 포함한 투명표시장치, 및 그의 제조방법
US11329177B2 (en) 2018-11-08 2022-05-10 Swift Solar Inc Stable perovskite module interconnects
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WO2020206642A1 (zh) * 2019-04-10 2020-10-15 深圳市柔宇科技有限公司 Oled触摸屏及其制造方法
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JP7293500B2 (ja) * 2020-09-09 2023-06-19 株式会社東芝 透明電極、透明電極の製造方法、および電子デバイス
KR102624394B1 (ko) * 2020-11-27 2024-01-15 한국과학기술연구원 탠덤 태양전지 모듈

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158861A (ja) * 2007-12-27 2009-07-16 Sanyo Electric Co Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法
US8822809B2 (en) 2009-10-15 2014-09-02 Lg Innotek Co., Ltd. Solar cell apparatus and method for manufacturing the same
KR101091357B1 (ko) 2009-11-03 2011-12-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101072170B1 (ko) 2009-11-06 2011-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2013519925A (ja) * 2010-02-19 2013-05-30 サン−ゴバン グラス フランス 直列接続されたセルを含むエレクトロクロミックグレイジング、およびその製造方法
US20120000506A1 (en) * 2010-07-02 2012-01-05 Samsung Sdi Co., Ltd., Photovoltaic module and method of manufacturing the same
JP2014507814A (ja) * 2011-07-13 2014-03-27 シンシリコン・コーポレーション 光起電装置及び光起電装置のスクライブ方法

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JP2013051451A (ja) 2013-03-14
CN101889351B (zh) 2012-07-18
US9252306B2 (en) 2016-02-02
EP2224495A4 (en) 2018-01-10
AU2008332347A1 (en) 2009-06-11
JP5160565B2 (ja) 2013-03-13
AU2008332347B2 (en) 2011-08-25
JPWO2009072592A1 (ja) 2011-04-28
KR20100076063A (ko) 2010-07-05
KR101128972B1 (ko) 2012-03-27
EP2224495A1 (en) 2010-09-01
CN101889351A (zh) 2010-11-17
US20100282291A1 (en) 2010-11-11
JP5400946B2 (ja) 2014-01-29

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