JPS6436082A - Manufacture of amorphous solar cell - Google Patents

Manufacture of amorphous solar cell

Info

Publication number
JPS6436082A
JPS6436082A JP62191984A JP19198487A JPS6436082A JP S6436082 A JPS6436082 A JP S6436082A JP 62191984 A JP62191984 A JP 62191984A JP 19198487 A JP19198487 A JP 19198487A JP S6436082 A JPS6436082 A JP S6436082A
Authority
JP
Japan
Prior art keywords
thickness
transparent conductive
conductive film
film
ito
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62191984A
Other languages
Japanese (ja)
Inventor
Akira Hanabusa
Koshiro Mori
Masaharu Ono
Michio Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62191984A priority Critical patent/JPS6436082A/en
Publication of JPS6436082A publication Critical patent/JPS6436082A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

PURPOSE:To patterning the transparent conductive film on the incident light side without using a resist by dipping and patterning only a first transparent conductive film in an etchant. CONSTITUTION:After depositing first an ITO (first transparent conductive film) 2 on a glass substrate 1 to a thickness of 2000Angstrom , a SnO2 (second transparent conductive film) 3 is deposited to a thickness of 200Angstrom . Then, using a knife edge (metal piece) of carbon steel as a scriber, the whole of the thickness of the deposited SnO2 film 3 and part of the thickness of the ITO film 2 are scribed off (4) with a predetermined pattern. Then, this is dipped in a strong hydrochrolic acid to remove the ITO film 2 left in the parts 4 of removal by the above scribing. Thereafter, an amorphous silicon (pi, n layer) 5 and an electrode 6 on the transmitted light side are formed in the respective predetermined patterns.
JP62191984A 1987-07-31 1987-07-31 Manufacture of amorphous solar cell Pending JPS6436082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62191984A JPS6436082A (en) 1987-07-31 1987-07-31 Manufacture of amorphous solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62191984A JPS6436082A (en) 1987-07-31 1987-07-31 Manufacture of amorphous solar cell

Publications (1)

Publication Number Publication Date
JPS6436082A true JPS6436082A (en) 1989-02-07

Family

ID=16283696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62191984A Pending JPS6436082A (en) 1987-07-31 1987-07-31 Manufacture of amorphous solar cell

Country Status (1)

Country Link
JP (1) JPS6436082A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047183A1 (en) * 1997-04-11 1998-10-22 Robert Bosch Gmbh Method for structuring transparent conductive layer
WO2010135178A2 (en) * 2009-05-20 2010-11-25 Nanogram Corporation Metal patterning for electrically conductive structures based on alloy formation
JP5160565B2 (en) * 2007-12-05 2013-03-13 株式会社カネカ Integrated thin film photoelectric conversion device and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047183A1 (en) * 1997-04-11 1998-10-22 Robert Bosch Gmbh Method for structuring transparent conductive layer
JP5160565B2 (en) * 2007-12-05 2013-03-13 株式会社カネカ Integrated thin film photoelectric conversion device and manufacturing method thereof
WO2010135178A2 (en) * 2009-05-20 2010-11-25 Nanogram Corporation Metal patterning for electrically conductive structures based on alloy formation
WO2010135178A3 (en) * 2009-05-20 2011-02-03 Nanogram Corporation Metal patterning for electrically conductive structures based on alloy formation

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