WO2009072389A1 - 基板表面検査装置及び基板表面検査方法 - Google Patents

基板表面検査装置及び基板表面検査方法 Download PDF

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Publication number
WO2009072389A1
WO2009072389A1 PCT/JP2008/070918 JP2008070918W WO2009072389A1 WO 2009072389 A1 WO2009072389 A1 WO 2009072389A1 JP 2008070918 W JP2008070918 W JP 2008070918W WO 2009072389 A1 WO2009072389 A1 WO 2009072389A1
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WO
WIPO (PCT)
Prior art keywords
substrate
imaged
substrate surface
supports
imaging units
Prior art date
Application number
PCT/JP2008/070918
Other languages
English (en)
French (fr)
Inventor
Hiroshi Wakaba
Yoshinori Hayashi
Koichi Miyazono
Yoko Ono
Hideki Mori
Shozo Kawasaki
Original Assignee
Shibaura Mechatronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corporation filed Critical Shibaura Mechatronics Corporation
Priority to US12/745,377 priority Critical patent/US8508246B2/en
Priority to CN2008801188241A priority patent/CN101883979B/zh
Priority to KR1020107010811A priority patent/KR101140989B1/ko
Priority to DE112008003262T priority patent/DE112008003262B4/de
Publication of WO2009072389A1 publication Critical patent/WO2009072389A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

【課題】各支持体が支持している基板の部位についてもその状態を撮影画像から判断、解析することのできるような基板表面検査装置及び方法を提供することである。 【解決手段】複数の第１支持体２３ａ～２３ｄの走査方向と直交する方向に沿った基板支持位置の配列位置が、第１相対位置での撮影部３０ａ、３０ｂによる基板１０の撮影範囲外及び共通撮影範囲内の双方に設定され、複数の第２支持体２４ａ～２４ｄの前記走査方向と直交する方向に沿った基板支持位置の配列位置が、第２相対位置での撮影部による前記基板の撮影範囲外及び前記共通撮影範囲内の双方に設定された支持機構２０を用い、前記複数の第１支持体によって支持された基板１０の表面を第１相対位置にある前記撮影部が走査して撮影し、前記撮影部を第２相対位置に移動させ、前記複数の第２支持体によって支持された基板１０の表面を、第２相対位置にある撮影部が走査して撮影するように構成される。
PCT/JP2008/070918 2007-12-03 2008-11-18 基板表面検査装置及び基板表面検査方法 WO2009072389A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/745,377 US8508246B2 (en) 2007-12-03 2008-11-18 Substrate surface inspecting apparatus and substrate surface inspecting method
CN2008801188241A CN101883979B (zh) 2007-12-03 2008-11-18 基板表面检查装置以及基板表面检查方法
KR1020107010811A KR101140989B1 (ko) 2007-12-03 2008-11-18 기판 표면 검사 장치 및 기판 표면 검사 방법
DE112008003262T DE112008003262B4 (de) 2007-12-03 2008-11-18 Prüfvorrichtung und Prüfverfahren für Substratoberflächen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007311983A JP5128920B2 (ja) 2007-12-03 2007-12-03 基板表面検査装置及び基板表面検査方法
JP2007-311983 2007-12-03

Publications (1)

Publication Number Publication Date
WO2009072389A1 true WO2009072389A1 (ja) 2009-06-11

Family

ID=40717570

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070918 WO2009072389A1 (ja) 2007-12-03 2008-11-18 基板表面検査装置及び基板表面検査方法

Country Status (7)

Country Link
US (1) US8508246B2 (ja)
JP (1) JP5128920B2 (ja)
KR (1) KR101140989B1 (ja)
CN (1) CN101883979B (ja)
DE (1) DE112008003262B4 (ja)
TW (1) TW200942809A (ja)
WO (1) WO2009072389A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101929846B (zh) * 2009-06-18 2012-05-30 中芯国际集成电路制造(上海)有限公司 扫描晶圆表面图像的方法
CN104656005A (zh) * 2013-11-25 2015-05-27 富士施乐株式会社 检查设备
JP2017041953A (ja) * 2015-08-19 2017-02-23 シャープ株式会社 太陽光発電装置の監視装置および太陽光発電装置の監視方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010118046A (ja) * 2008-10-14 2010-05-27 Shibaura Mechatronics Corp 画像処理方法、画像処理装置及び該画像処理装置を用いた表面検査装置
JP6004517B2 (ja) * 2011-04-19 2016-10-12 芝浦メカトロニクス株式会社 基板検査装置、基板検査方法及び該基板検査装置の調整方法
JP5791101B2 (ja) * 2011-05-16 2015-10-07 芝浦メカトロニクス株式会社 貼り合せ板状体検査装置及び方法
JPWO2013002179A1 (ja) * 2011-06-27 2015-02-23 株式会社ニコン パターンの評価方法、パターン評価装置、および半導体装置の製造方法
JP5753516B2 (ja) * 2011-11-28 2015-07-22 東京エレクトロン株式会社 基板撮像装置及び基板撮像方法
US11138722B2 (en) * 2018-12-21 2021-10-05 Kla-Tencor Corporation Differential imaging for single-path optical wafer inspection
TWI707130B (zh) * 2019-12-31 2020-10-11 由田新技股份有限公司 移載裝置、光學檢測設備及光學檢測方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH11219990A (ja) * 1998-01-30 1999-08-10 Mitsubishi Materials Silicon Corp 半導体ウェーハの検査方法およびその装置
WO2003027652A1 (fr) * 2001-09-21 2003-04-03 Olympus Corporation Dispositif d'inspection de defauts
JP2007303829A (ja) * 2006-05-08 2007-11-22 Mitsubishi Electric Corp 画像検査装置およびこの画像検査装置を用いた画像検査方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08105937A (ja) * 1994-10-06 1996-04-23 Advantest Corp デバイス・テスタ用オートハンドラ及びその装置のデバイス測定方法
JPH11330798A (ja) * 1998-05-19 1999-11-30 Fuji Mach Mfg Co Ltd 電気部品装着方法およびシステム
CN1932646B (zh) * 2005-09-14 2011-11-30 东海商事株式会社 曝光装置
JP2007147441A (ja) 2005-11-28 2007-06-14 Nikon Corp 検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11219990A (ja) * 1998-01-30 1999-08-10 Mitsubishi Materials Silicon Corp 半導体ウェーハの検査方法およびその装置
WO2003027652A1 (fr) * 2001-09-21 2003-04-03 Olympus Corporation Dispositif d'inspection de defauts
JP2007303829A (ja) * 2006-05-08 2007-11-22 Mitsubishi Electric Corp 画像検査装置およびこの画像検査装置を用いた画像検査方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101929846B (zh) * 2009-06-18 2012-05-30 中芯国际集成电路制造(上海)有限公司 扫描晶圆表面图像的方法
CN104656005A (zh) * 2013-11-25 2015-05-27 富士施乐株式会社 检查设备
JP2017041953A (ja) * 2015-08-19 2017-02-23 シャープ株式会社 太陽光発電装置の監視装置および太陽光発電装置の監視方法

Also Published As

Publication number Publication date
CN101883979B (zh) 2012-07-04
DE112008003262T5 (de) 2010-09-16
JP5128920B2 (ja) 2013-01-23
US20100310152A1 (en) 2010-12-09
JP2009133797A (ja) 2009-06-18
TW200942809A (en) 2009-10-16
DE112008003262B4 (de) 2013-05-16
KR20100072079A (ko) 2010-06-29
US8508246B2 (en) 2013-08-13
KR101140989B1 (ko) 2012-05-02
CN101883979A (zh) 2010-11-10

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