WO2009069740A1 - 成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 - Google Patents
成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 Download PDFInfo
- Publication number
- WO2009069740A1 WO2009069740A1 PCT/JP2008/071636 JP2008071636W WO2009069740A1 WO 2009069740 A1 WO2009069740 A1 WO 2009069740A1 JP 2008071636 W JP2008071636 W JP 2008071636W WO 2009069740 A1 WO2009069740 A1 WO 2009069740A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film forming
- forming device
- organic
- organic material
- evaporated
- Prior art date
Links
- 238000001704 evaporation Methods 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 239000011368 organic material Substances 0.000 abstract 4
- 230000008020 evaporation Effects 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000012044 organic layer Substances 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/80—Composition varying spatially, e.g. having a spatial gradient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107011327A KR101231656B1 (ko) | 2007-11-30 | 2008-11-28 | 성막 장치의 제어 방법, 성막 방법, 성막 장치, 유기 el 전자 디바이스 및 그 제어 프로그램을 격납한 기억 매체 |
US12/745,082 US20100259162A1 (en) | 2007-11-30 | 2008-11-28 | Film forming device control method, film forming method, film forming device, organic el electronic device, and recording medium storing its control program |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-310252 | 2007-11-30 | ||
JP2007310252A JP5527933B2 (ja) | 2007-11-30 | 2007-11-30 | 成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009069740A1 true WO2009069740A1 (ja) | 2009-06-04 |
Family
ID=40678629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/071636 WO2009069740A1 (ja) | 2007-11-30 | 2008-11-28 | 成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100259162A1 (ja) |
JP (1) | JP5527933B2 (ja) |
KR (1) | KR101231656B1 (ja) |
TW (1) | TW200933952A (ja) |
WO (1) | WO2009069740A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110097495A1 (en) * | 2009-09-03 | 2011-04-28 | Universal Display Corporation | Organic vapor jet printing with chiller plate |
JP5976344B2 (ja) * | 2012-03-06 | 2016-08-23 | 株式会社アルバック | 有機el素子の電極膜形成方法、有機el素子の電極膜形成装置 |
KR101868458B1 (ko) * | 2012-05-11 | 2018-06-20 | 주식회사 원익아이피에스 | 박막증착장치 |
ES2480865B1 (es) * | 2012-12-28 | 2015-05-20 | Abengoa Solar New Technologies, S.A. | Fuente de evaporación para el transporte de precursores químicos, y método de evaporación para el transporte de los mismos que utiliza dicha fuente. |
KR102136787B1 (ko) | 2013-03-14 | 2020-07-23 | 삼성디스플레이 주식회사 | 진공증착기 |
US9909205B2 (en) | 2014-03-11 | 2018-03-06 | Joled Inc. | Vapor deposition apparatus, vapor deposition method using vapor deposition apparatus, and device production method |
JP6358446B2 (ja) * | 2014-03-11 | 2018-07-18 | 株式会社Joled | 蒸着装置及びその制御方法、蒸着装置を用いた蒸着方法、及びデバイスの製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068468A (ja) * | 2001-08-28 | 2003-03-07 | Matsushita Electric Works Ltd | 有機電界発光素子 |
JP2004319305A (ja) * | 2003-04-17 | 2004-11-11 | Dainippon Printing Co Ltd | エレクトロルミネッセンス素子および高分子化合物 |
JP2005126757A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 化合物薄膜の製造装置および方法 |
JP2006111965A (ja) * | 2004-09-14 | 2006-04-27 | Showa Shinku:Kk | 有機材料蒸発源及びこれを用いた蒸着装置 |
JP2007169728A (ja) * | 2005-12-22 | 2007-07-05 | Tokyo Electron Ltd | 原料供給装置および蒸着装置 |
JP2007294261A (ja) * | 2006-04-25 | 2007-11-08 | Matsushita Electric Works Ltd | 有機エレクトロルミネッセンス素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020025918A (ko) * | 2002-02-15 | 2002-04-04 | 박병주 | 습식 공정으로 제작된 유기 반도체 디바이스 및 유기전계발광 소자 |
EP1928828B1 (en) * | 2005-09-02 | 2012-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Anthracene derivative |
-
2007
- 2007-11-30 JP JP2007310252A patent/JP5527933B2/ja not_active Expired - Fee Related
-
2008
- 2008-11-28 KR KR1020107011327A patent/KR101231656B1/ko not_active IP Right Cessation
- 2008-11-28 WO PCT/JP2008/071636 patent/WO2009069740A1/ja active Application Filing
- 2008-11-28 US US12/745,082 patent/US20100259162A1/en not_active Abandoned
- 2008-11-28 TW TW097146452A patent/TW200933952A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068468A (ja) * | 2001-08-28 | 2003-03-07 | Matsushita Electric Works Ltd | 有機電界発光素子 |
JP2004319305A (ja) * | 2003-04-17 | 2004-11-11 | Dainippon Printing Co Ltd | エレクトロルミネッセンス素子および高分子化合物 |
JP2005126757A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 化合物薄膜の製造装置および方法 |
JP2006111965A (ja) * | 2004-09-14 | 2006-04-27 | Showa Shinku:Kk | 有機材料蒸発源及びこれを用いた蒸着装置 |
JP2007169728A (ja) * | 2005-12-22 | 2007-07-05 | Tokyo Electron Ltd | 原料供給装置および蒸着装置 |
JP2007294261A (ja) * | 2006-04-25 | 2007-11-08 | Matsushita Electric Works Ltd | 有機エレクトロルミネッセンス素子 |
Also Published As
Publication number | Publication date |
---|---|
KR101231656B1 (ko) | 2013-02-08 |
JP5527933B2 (ja) | 2014-06-25 |
TW200933952A (en) | 2009-08-01 |
JP2009132977A (ja) | 2009-06-18 |
KR20100076044A (ko) | 2010-07-05 |
US20100259162A1 (en) | 2010-10-14 |
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