WO2009069740A1 - 成膜装置の制御方法、成膜方法、成膜装置、有機ｅｌ電子デバイスおよびその制御プログラムを格納した記憶媒体 - Google Patents

成膜装置の制御方法、成膜方法、成膜装置、有機ｅｌ電子デバイスおよびその制御プログラムを格納した記憶媒体 Download PDF

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Publication number
WO2009069740A1
WO2009069740A1 PCT/JP2008/071636 JP2008071636W WO2009069740A1 WO 2009069740 A1 WO2009069740 A1 WO 2009069740A1 JP 2008071636 W JP2008071636 W JP 2008071636W WO 2009069740 A1 WO2009069740 A1 WO 2009069740A1
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WIPO (PCT)
Prior art keywords
film forming
forming device
organic
organic material
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071636
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English (en)
French (fr)
Inventor
Kazuki Moyama
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020107011327A priority Critical patent/KR101231656B1/ko
Priority to US12/745,082 priority patent/US20100259162A1/en
Publication of WO2009069740A1 publication Critical patent/WO2009069740A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/80—Composition varying spatially, e.g. having a spatial gradient

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

【課題】仕事関数の低い材料を迅速に有機層と陰極との界面近傍に挿入する。 【解決手段】ＰＭ１は、処理容器１００と、有機材料を加熱して気化させる蒸着装置２００と、第１の蒸着源に連通し、第１の蒸着源にて気化された有機材料を不活性ガスにより運搬させる第１のガス供給路１５０と、処理容器外に設けられ、陰極を形成する第１の金属よりも仕事関数が小さい第２の金属を加熱して気化させるディスペンサＤｓと、ディスペンサに連通し、ディスペンサにて気化された第２の金属を不活性ガスにより運搬させる第２のガス供給路３２０と、各ガス供給路１５０、３２０に連通し、気化された第２の金属を気化された有機材料に混入させて処理容器内の被処理体に向けて吹き出させる吹き出し機構１２０ｆと、気化された有機材料に混入させる前記気化された第２の金属の割合を制御する制御器５０とを有する。
PCT/JP2008/071636 2007-11-30 2008-11-28 成膜装置の制御方法、成膜方法、成膜装置、有機ｅｌ電子デバイスおよびその制御プログラムを格納した記憶媒体 Ceased WO2009069740A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020107011327A KR101231656B1 (ko) 2007-11-30 2008-11-28 성막 장치의 제어 방법, 성막 방법, 성막 장치, 유기 ｅｌ 전자 디바이스 및 그 제어 프로그램을 격납한 기억 매체
US12/745,082 US20100259162A1 (en) 2007-11-30 2008-11-28 Film forming device control method, film forming method, film forming device, organic el electronic device, and recording medium storing its control program

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007310252A JP5527933B2 (ja) 2007-11-30 2007-11-30 成膜装置の制御方法、成膜方法、成膜装置、有機ｅｌ電子デバイスおよびその制御プログラムを格納した記憶媒体
JP2007-310252 2007-11-30

Publications (1)

Publication Number Publication Date
WO2009069740A1 true WO2009069740A1 (ja) 2009-06-04

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PCT/JP2008/071636 Ceased WO2009069740A1 (ja) 2007-11-30 2008-11-28 成膜装置の制御方法、成膜方法、成膜装置、有機ｅｌ電子デバイスおよびその制御プログラムを格納した記憶媒体

Country Status (5)

Country Link
US (1) US20100259162A1 (ja)
JP (1) JP5527933B2 (ja)
KR (1) KR101231656B1 (ja)
TW (1) TW200933952A (ja)
WO (1) WO2009069740A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110097495A1 (en) * 2009-09-03 2011-04-28 Universal Display Corporation Organic vapor jet printing with chiller plate
JP5976344B2 (ja) * 2012-03-06 2016-08-23 株式会社アルバック 有機ｅｌ素子の電極膜形成方法、有機ｅｌ素子の電極膜形成装置
KR101868458B1 (ko) * 2012-05-11 2018-06-20 주식회사 원익아이피에스 박막증착장치
ES2480865B1 (es) * 2012-12-28 2015-05-20 Abengoa Solar New Technologies, S.A. Fuente de evaporación para el transporte de precursores químicos, y método de evaporación para el transporte de los mismos que utiliza dicha fuente.
KR102136787B1 (ko) 2013-03-14 2020-07-23 삼성디스플레이 주식회사 진공증착기
CN106103790B (zh) * 2014-03-11 2018-12-07 株式会社日本有机雷特显示器 蒸镀装置及其控制方法、使用了蒸镀装置的蒸镀方法、以及器件的制造方法
JP6241903B2 (ja) * 2014-03-11 2017-12-06 株式会社Ｊｏｌｅｄ 蒸着装置及び蒸着装置を用いた蒸着方法、及びデバイスの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068468A (ja) * 2001-08-28 2003-03-07 Matsushita Electric Works Ltd 有機電界発光素子
JP2004319305A (ja) * 2003-04-17 2004-11-11 Dainippon Printing Co Ltd エレクトロルミネッセンス素子および高分子化合物
JP2005126757A (ja) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd 化合物薄膜の製造装置および方法
JP2006111965A (ja) * 2004-09-14 2006-04-27 Showa Shinku:Kk 有機材料蒸発源及びこれを用いた蒸着装置
JP2007169728A (ja) * 2005-12-22 2007-07-05 Tokyo Electron Ltd 原料供給装置および蒸着装置
JP2007294261A (ja) * 2006-04-25 2007-11-08 Matsushita Electric Works Ltd 有機エレクトロルミネッセンス素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020025918A (ko) * 2002-02-15 2002-04-04 박병주 습식 공정으로 제작된 유기 반도체 디바이스 및 유기전계발광 소자
KR20130115397A (ko) * 2005-09-02 2013-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 안트라센 유도체

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068468A (ja) * 2001-08-28 2003-03-07 Matsushita Electric Works Ltd 有機電界発光素子
JP2004319305A (ja) * 2003-04-17 2004-11-11 Dainippon Printing Co Ltd エレクトロルミネッセンス素子および高分子化合物
JP2005126757A (ja) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd 化合物薄膜の製造装置および方法
JP2006111965A (ja) * 2004-09-14 2006-04-27 Showa Shinku:Kk 有機材料蒸発源及びこれを用いた蒸着装置
JP2007169728A (ja) * 2005-12-22 2007-07-05 Tokyo Electron Ltd 原料供給装置および蒸着装置
JP2007294261A (ja) * 2006-04-25 2007-11-08 Matsushita Electric Works Ltd 有機エレクトロルミネッセンス素子

Also Published As

Publication number Publication date
KR101231656B1 (ko) 2013-02-08
JP2009132977A (ja) 2009-06-18
KR20100076044A (ko) 2010-07-05
TW200933952A (en) 2009-08-01
JP5527933B2 (ja) 2014-06-25
US20100259162A1 (en) 2010-10-14

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