WO2009054182A1 - スピンバルブ素子及びその製造方法 - Google Patents

スピンバルブ素子及びその製造方法 Download PDF

Info

Publication number
WO2009054182A1
WO2009054182A1 PCT/JP2008/065407 JP2008065407W WO2009054182A1 WO 2009054182 A1 WO2009054182 A1 WO 2009054182A1 JP 2008065407 W JP2008065407 W JP 2008065407W WO 2009054182 A1 WO2009054182 A1 WO 2009054182A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
spin
parallel
elements
series
Prior art date
Application number
PCT/JP2008/065407
Other languages
English (en)
French (fr)
Inventor
Haruo Kawakami
Yasushi Ogimoto
Eiki Adachi
Original Assignee
Fuji Electric Holdings Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Holdings Co., Ltd. filed Critical Fuji Electric Holdings Co., Ltd.
Priority to JP2009537990A priority Critical patent/JP5495108B2/ja
Priority to EP08841627A priority patent/EP2204852A4/en
Priority to US12/739,741 priority patent/US9318248B2/en
Publication of WO2009054182A1 publication Critical patent/WO2009054182A1/ja
Priority to US15/131,749 priority patent/US9928951B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　高周波の発振を行うスピンバルブ素子においてインピーダンスマッチングを実現するため、絶縁体または非磁性体からなる中間層を一対の強磁性層により挟持した磁性素子を複数含む並列または直列磁性素子群を、さらに直列または並列につないでスピンバルブ素子を得て、並列と直列とを組み合わせて接続する磁性素子群を用いることにより、スピンバルブ素子のインピーダンスを所望の値にマッチングさせることができ、さらに多孔質膜を利用してスピンバルブ素子を作製することにより、高度なリソグラフィー法を用いることなく、個々の磁性素子に単磁区構造を実現することができる。
PCT/JP2008/065407 2007-10-25 2008-08-28 スピンバルブ素子及びその製造方法 WO2009054182A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009537990A JP5495108B2 (ja) 2007-10-25 2008-08-28 スピンバルブ素子及びその製造方法
EP08841627A EP2204852A4 (en) 2007-10-25 2008-08-28 SPIN VALVE ELEMENT AND METHOD FOR MANUFACTURING THE SAME
US12/739,741 US9318248B2 (en) 2007-10-25 2008-08-28 Spin valve element and method of manufacturing same
US15/131,749 US9928951B2 (en) 2007-10-25 2016-04-18 Spin valve element and method of manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007277399 2007-10-25
JP2007-277399 2007-10-25

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/739,741 A-371-Of-International US9318248B2 (en) 2007-10-25 2008-08-28 Spin valve element and method of manufacturing same
US15/131,749 Continuation US9928951B2 (en) 2007-10-25 2016-04-18 Spin valve element and method of manufacturing same

Publications (1)

Publication Number Publication Date
WO2009054182A1 true WO2009054182A1 (ja) 2009-04-30

Family

ID=40579289

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065407 WO2009054182A1 (ja) 2007-10-25 2008-08-28 スピンバルブ素子及びその製造方法

Country Status (5)

Country Link
US (2) US9318248B2 (ja)
EP (1) EP2204852A4 (ja)
JP (1) JP5495108B2 (ja)
KR (1) KR101467267B1 (ja)
WO (1) WO2009054182A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013065751A1 (ja) * 2011-10-31 2013-05-10 国立大学法人九州大学 スピン発振装置及びその製造方法
JP2014232563A (ja) * 2009-12-11 2014-12-11 エイチジーエスティーネザーランドビーブイ 磁気抵抗マルチセンサアレイ
JP2016143701A (ja) * 2015-01-30 2016-08-08 Tdk株式会社 磁気抵抗効果デバイス
WO2020105263A1 (ja) * 2018-11-21 2020-05-28 国立研究開発法人産業技術総合研究所 スピントルク発振素子

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318248B2 (en) * 2007-10-25 2016-04-19 Iii Holdings 2, Llc Spin valve element and method of manufacturing same
FR2980040B1 (fr) * 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor organique a effet de champ
US11037981B2 (en) * 2018-10-31 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with magnetic tunnel junctions
CN110029315B (zh) * 2019-04-29 2020-01-31 电子科技大学 一种超晶格材料及其制备方法和应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002084018A (ja) * 2000-09-08 2002-03-22 Canon Inc 磁気デバイス及びその製造方法、並びに固体磁気メモリ
JP2004314238A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2007124340A (ja) * 2005-10-28 2007-05-17 Toshiba Corp 高周波発振素子、ならびにそれを用いた車載レーダー装置、車間通信装置および情報端末間通信装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2576456B2 (ja) 1991-01-14 1997-01-29 株式会社村田製作所 磁気センサ
US5691132A (en) 1994-11-14 1997-11-25 Cerus Corporation Method for inactivating pathogens in red cell compositions using quinacrine mustard
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
DE50000924D1 (de) * 1999-03-19 2003-01-23 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
US6272041B1 (en) 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
TWI222630B (en) * 2001-04-24 2004-10-21 Matsushita Electric Ind Co Ltd Magnetoresistive element and magnetoresistive memory device using the same
US6829161B2 (en) * 2003-01-10 2004-12-07 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US7906345B2 (en) * 2003-11-12 2011-03-15 The Board Of Trustees Of The Leland Stanford Junior University Magnetic nanoparticles, magnetic detector arrays, and methods for their use in detecting biological molecules
US6925000B2 (en) 2003-12-12 2005-08-02 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
JP2006075942A (ja) * 2004-09-09 2006-03-23 Fujitsu Ltd 積層構造体、磁気記録媒体及びその製造方法、磁気記録装置及び磁気記録方法、並びに、該積層構造体を用いた素子
KR100698413B1 (ko) * 2004-09-28 2007-03-23 야마하 가부시키가이샤 거대 자기저항 소자를 이용한 자기 센서 및 그 제조 방법
JP4712412B2 (ja) 2005-03-11 2011-06-29 古河電気工業株式会社 ナノ構造体及びそれを用いた磁気記憶材料、配線基板、アンテナ基材
CA2597692A1 (en) * 2005-04-21 2006-11-02 Violin Memory, Inc. Interconnection system
JP4504273B2 (ja) 2005-07-06 2010-07-14 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US7635903B2 (en) * 2005-09-13 2009-12-22 Everspin Technologies, Inc. Oscillator and method of manufacture
US7372753B1 (en) * 2006-10-19 2008-05-13 Unity Semiconductor Corporation Two-cycle sensing in a two-terminal memory array having leakage current
CA2668351A1 (en) * 2006-11-03 2008-09-25 New York University Electronic devices based on current induced magnetization dynamics in single magnetic layers
US7652915B2 (en) * 2006-12-19 2010-01-26 Hitachi Global Storage Technologies Netherlands B.V. High density spin torque three dimensional (3D) memory arrays addressed with microwave current
US9318248B2 (en) * 2007-10-25 2016-04-19 Iii Holdings 2, Llc Spin valve element and method of manufacturing same
US8049567B2 (en) * 2007-11-01 2011-11-01 Johan Persson Circuit for phase locked oscillators
US8053244B2 (en) * 2008-08-13 2011-11-08 Seagate Technology Llc Magnetic oscillator based biosensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002084018A (ja) * 2000-09-08 2002-03-22 Canon Inc 磁気デバイス及びその製造方法、並びに固体磁気メモリ
JP2004314238A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2007124340A (ja) * 2005-10-28 2007-05-17 Toshiba Corp 高周波発振素子、ならびにそれを用いた車載レーダー装置、車間通信装置および情報端末間通信装置

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
CROS V. ET AL.: "Synchronization of spin- transfer oscillators driven by stimulated microwave currents", PHYSICAL REVIEW B, vol. 73, 24 February 2006 (2006-02-24), pages 060409 - 1-060409, XP008132021 *
F.B. MANCOFF ET AL.: "Phase-locking in double-point-contact spin-transfer devices", NATURE, vol. 437, 2005, pages 393, XP002497339, DOI: doi:10.1038/nature04036
H. MASUDA: "High-regularity metal nano-hole array based on anodic oxidized alumina", KOTAI BUTSURI, vol. 31, no. 5, 1996, pages 493
J. GROLLIER ET AL.: "Synchronization of spin-transfer oscillator driven by stimulated microwave currents", PHYSICAL REVIEW B, vol. 73, 2006, pages 060409
MANCOFF F.B. ET AL.: "Phase-locking in double-point-contact spin-transfer devices", NATURE, vol. 437, 15 September 2005 (2005-09-15), pages 393 - 395, XP002497339 *
S. KAKA ET AL.: "Mutual phase-locking of microwave spin torque nano-oscillators", NATURE, vol. 437, 2005, pages 389, XP002666858, DOI: doi:10.1038/NATURE04035
S.I. KISELEV ET AL.: "Microwave oscillations of a nanomagnet driven by a spin-polarized current", NATURE, vol. 425, 2003, pages 380, XP002329287, DOI: doi:10.1038/nature01967
See also references of EP2204852A4
X.M. YANG ET AL.: "Nanoscopic templates using self- assembled cylindrical diblock co-polymers for patterned media", J. VAC. SCI. TECHNOL. B, vol. 22, 2004, pages 3331, XP012074725, DOI: doi:10.1116/1.1815301

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232563A (ja) * 2009-12-11 2014-12-11 エイチジーエスティーネザーランドビーブイ 磁気抵抗マルチセンサアレイ
WO2013065751A1 (ja) * 2011-10-31 2013-05-10 国立大学法人九州大学 スピン発振装置及びその製造方法
JP2016143701A (ja) * 2015-01-30 2016-08-08 Tdk株式会社 磁気抵抗効果デバイス
WO2020105263A1 (ja) * 2018-11-21 2020-05-28 国立研究開発法人産業技術総合研究所 スピントルク発振素子
JP2020088088A (ja) * 2018-11-21 2020-06-04 国立研究開発法人産業技術総合研究所 スピントルク発振素子
JP7258332B2 (ja) 2018-11-21 2023-04-17 国立研究開発法人産業技術総合研究所 スピントルク発振素子

Also Published As

Publication number Publication date
EP2204852A1 (en) 2010-07-07
JPWO2009054182A1 (ja) 2011-03-03
EP2204852A4 (en) 2012-02-22
US9928951B2 (en) 2018-03-27
US20100291411A1 (en) 2010-11-18
US9318248B2 (en) 2016-04-19
KR20100071064A (ko) 2010-06-28
KR101467267B1 (ko) 2014-12-01
JP5495108B2 (ja) 2014-05-21
US20160233014A1 (en) 2016-08-11

Similar Documents

Publication Publication Date Title
WO2009054182A1 (ja) スピンバルブ素子及びその製造方法
DE602006006207D1 (de) Hochfrequenzoszillator mit spin-polarisiertem elektrischen strom
WO2008050045A3 (fr) Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d'interactions
JP2011137811A5 (ja)
WO2008155996A1 (ja) トンネル磁気抵抗薄膜及び磁性多層膜作製装置
EP1844356A4 (en) METHOD FOR STRUCTURING CONDUCTIVE LAYERS, METHOD FOR PRODUCING POLARIZERS, AND POLARIZERS PRODUCED THEREWITH
WO2013007797A9 (fr) Oscillateur spintronique et utilisation de celui-ci dans des dispositifs radiofréquence
JP2014517516A5 (ja)
JP2018522404A5 (ja)
JP2011523506A5 (ja)
JP2010521690A5 (ja)
ATE551702T1 (de) Widerstand mit vorbestimmtem temperaturkoeffizienten
ATE498944T1 (de) Resonanzschaltkreis-abstimmsystem mit dynamischer impedanzanpassung
ATE532190T1 (de) Leiteranordnung für ein resistives schaltelement mit wenigstens zwei leiterverbünden aus supraleitenden leiterbändern
ATE514096T1 (de) Rauscharmer magnetfeldsensor
TW200723319A (en) Flexible coil
NO20052878D0 (no) Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning.
WO2009054180A1 (ja) 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
WO2011103104A3 (en) Rare earth laminated, composite magnets with increased electrical resistivity
JP2008134181A (ja) 磁気検出装置及びその製造方法
WO2009078296A1 (ja) 磁気センサ
DE102005040900A8 (de) Gestapeltes piezoelektrisches Element, dessen Herstellungsverfahren und elektrisch leitendes Haftmittel
WO2008114681A1 (ja) 受動部品
WO2009029859A3 (en) Nanodisks and methods of fabrication of nanodisks
WO2014070682A8 (en) Double self-aligned phase change memory device structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08841627

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009537990

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2008841627

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20107007998

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12739741

Country of ref document: US