JP2020088088A - スピントルク発振素子 - Google Patents
スピントルク発振素子 Download PDFInfo
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- JP2020088088A JP2020088088A JP2018218165A JP2018218165A JP2020088088A JP 2020088088 A JP2020088088 A JP 2020088088A JP 2018218165 A JP2018218165 A JP 2018218165A JP 2018218165 A JP2018218165 A JP 2018218165A JP 2020088088 A JP2020088088 A JP 2020088088A
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- sto
- spin torque
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- 230000010355 oscillation Effects 0.000 title claims abstract description 21
- 230000005415 magnetization Effects 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 229910000889 permalloy Inorganic materials 0.000 claims abstract description 11
- 229910019236 CoFeB Inorganic materials 0.000 claims abstract description 7
- 230000005291 magnetic effect Effects 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000010030 laminating Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
2 パーマロイ層(NiFeB)
3 トンネル障壁層(MgO)
4 磁化自由層(FeB)
10 スピントルク発振素子(STO)
12 直流電源
13 高周波信号発生器
14 スペクトラムアナライザ
15 パーソナルコンピューター(PC)
16 パワーディバイダ
Claims (7)
- CoFeBを含む磁化固定層と、MgOを含むトンネル障壁層と、FeBを含む磁化自由層が順番に積層された積層構造において、NiFeBを含むパーマロイ層を前記磁化固定層と前記トンネル障壁層の間に設けたことを特徴とする、スピントルク発振素子。
- 前記NiFeBにおけるNi組成比は76〜85at%の範囲にある、請求項1に記載のスピントルク発振素子。
- 前記パーマロイ層は略5Åの厚さを有する、請求項2に記載のスピントルク発振素子。
- 前記磁化固定層は略23Åの厚さを有し、前記トンネル障壁層は略10Åの厚さを有し、前記磁化自由層は略50Åの厚さを有する、請求項3に記載のスピントルク発振素子。
- 請求項1〜4のいずれか1項に記載の複数のスピントルク発振素子を直列、並列、または直並及び並列に配列したスピントルク発振素子アレイ。
- 前記複数のスピントルク発振素子間の同期幅は、9〜11MHZの範囲にある、請求項5に記載のスピントルク発振素子アレイ。
- 前記複数のスピントルク発振素子に印加する磁界が360〜390mTで、直流電圧が270〜300mVの場合に前記同期幅が得られる、請求項6に記載のスピントルク発振素子アレイ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018218165A JP7258332B2 (ja) | 2018-11-21 | 2018-11-21 | スピントルク発振素子 |
PCT/JP2019/036543 WO2020105263A1 (ja) | 2018-11-21 | 2019-09-18 | スピントルク発振素子 |
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JP2018218165A JP7258332B2 (ja) | 2018-11-21 | 2018-11-21 | スピントルク発振素子 |
Publications (3)
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JP2020088088A true JP2020088088A (ja) | 2020-06-04 |
JP2020088088A5 JP2020088088A5 (ja) | 2021-11-25 |
JP7258332B2 JP7258332B2 (ja) | 2023-04-17 |
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JP2018218165A Active JP7258332B2 (ja) | 2018-11-21 | 2018-11-21 | スピントルク発振素子 |
Country Status (2)
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JP (1) | JP7258332B2 (ja) |
WO (1) | WO2020105263A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7239578B2 (ja) * | 2018-06-19 | 2023-03-14 | ソニーセミコンダクタソリューションズ株式会社 | 磁気記憶素子、磁気ヘッド、磁気記憶装置、電子機器、及び磁気記憶素子の製造方法 |
CN111969954B (zh) * | 2020-08-12 | 2022-10-21 | 北京航空航天大学合肥创新研究院 | 一种基于滤波器的自旋纳米振荡器同步方法 |
CN113097379B (zh) * | 2021-03-23 | 2024-01-12 | 西安交通大学 | 包括磁耦合的自旋振荡器阵列的振荡器装置及其制造方法 |
CN113823733A (zh) * | 2021-09-07 | 2021-12-21 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 自旋力矩振荡器三维串并联同步阵列、振荡器及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231904A (ja) * | 2001-02-06 | 2002-08-16 | Mitsubishi Electric Corp | 磁気記憶装置および磁性体基板 |
WO2009054182A1 (ja) * | 2007-10-25 | 2009-04-30 | Fuji Electric Holdings Co., Ltd. | スピンバルブ素子及びその製造方法 |
JP2012204682A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 磁気発振素子及びスピン波装置 |
JP2012253344A (ja) * | 2011-05-31 | 2012-12-20 | Hgst Netherlands B V | 3端子スピントルク発振素子(sto) |
JP2015060939A (ja) * | 2013-09-18 | 2015-03-30 | 株式会社東芝 | 磁気記録装置 |
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2018
- 2018-11-21 JP JP2018218165A patent/JP7258332B2/ja active Active
-
2019
- 2019-09-18 WO PCT/JP2019/036543 patent/WO2020105263A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231904A (ja) * | 2001-02-06 | 2002-08-16 | Mitsubishi Electric Corp | 磁気記憶装置および磁性体基板 |
WO2009054182A1 (ja) * | 2007-10-25 | 2009-04-30 | Fuji Electric Holdings Co., Ltd. | スピンバルブ素子及びその製造方法 |
JP2012204682A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 磁気発振素子及びスピン波装置 |
JP2012253344A (ja) * | 2011-05-31 | 2012-12-20 | Hgst Netherlands B V | 3端子スピントルク発振素子(sto) |
JP2015060939A (ja) * | 2013-09-18 | 2015-03-30 | 株式会社東芝 | 磁気記録装置 |
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Publication number | Publication date |
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JP7258332B2 (ja) | 2023-04-17 |
WO2020105263A1 (ja) | 2020-05-28 |
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