JP2020088088A5 - - Google Patents
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- JP2020088088A5 JP2020088088A5 JP2018218165A JP2018218165A JP2020088088A5 JP 2020088088 A5 JP2020088088 A5 JP 2020088088A5 JP 2018218165 A JP2018218165 A JP 2018218165A JP 2018218165 A JP2018218165 A JP 2018218165A JP 2020088088 A5 JP2020088088 A5 JP 2020088088A5
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- spin torque
- layer
- thickness
- tunnel barrier
- torque oscillating
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Claims (7)
- ＣｏＦｅＢを含む磁化固定層と、ＭｇＯを含むトンネル障壁層と、ＦｅＢからなる磁化自由層が順番に積層された積層構造において、ＮｉＦｅＢを含むパーマロイ層を前記磁化固定層と前記トンネル障壁層の間に設けたことを特徴とする、スピントルク発振素子。
- 前記ＮｉＦｅＢにおけるＮｉ組成比は７６〜８５ａｔ％の範囲にある、請求項１に記載のスピントルク発振素子。
- 前記パーマロイ層は略５Åの厚さを有する、請求項２に記載のスピントルク発振素子。
- 前記磁化固定層は略２３Åの厚さを有し、前記トンネル障壁層は略１０Åの厚さを有し、前記磁化自由層は略５０Åの厚さを有する、請求項３に記載のスピントルク発振素子。
- 請求項１〜４のいずれか１項に記載の複数のスピントルク発振素子を直列、並列、または直並及び並列に配列したスピントルク発振素子アレイ。
- 前記複数のスピントルク発振素子間の同期幅は、９〜１１ＭＨＺの範囲にある、請求項５に記載のスピントルク発振素子アレイ。
- 前記複数のスピントルク発振素子に印加する磁界が３６０〜３９０ｍＴで、直流電圧が２７０〜３００ｍＶの場合に前記同期幅が得られる、請求項６に記載のスピントルク発振素子アレイ。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018218165A JP7258332B2 (ja) | 2018-11-21 | 2018-11-21 | スピントルク発振素子 |
| PCT/JP2019/036543 WO2020105263A1 (ja) | 2018-11-21 | 2019-09-18 | スピントルク発振素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018218165A JP7258332B2 (ja) | 2018-11-21 | 2018-11-21 | スピントルク発振素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020088088A JP2020088088A (ja) | 2020-06-04 |
| JP2020088088A5 true JP2020088088A5 (ja) | 2021-11-25 |
| JP7258332B2 JP7258332B2 (ja) | 2023-04-17 |
Family
ID=70774213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018218165A Active JP7258332B2 (ja) | 2018-11-21 | 2018-11-21 | スピントルク発振素子 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7258332B2 (ja) |
| WO (1) | WO2020105263A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11462681B2 (en) * | 2018-06-19 | 2022-10-04 | Sony Semiconductor Solutions Corporation | Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage element |
| CN111969954B (zh) * | 2020-08-12 | 2022-10-21 | 北京航空航天大学合肥创新研究院 | 一种基于滤波器的自旋纳米振荡器同步方法 |
| CN113097379B (zh) * | 2021-03-23 | 2024-01-12 | 西安交通大学 | 包括磁耦合的自旋振荡器阵列的振荡器装置及其制造方法 |
| CN113823733A (zh) * | 2021-09-07 | 2021-12-21 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 自旋力矩振荡器三维串并联同步阵列、振荡器及制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4818519B2 (ja) | 2001-02-06 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置 |
| US9318248B2 (en) | 2007-10-25 | 2016-04-19 | Iii Holdings 2, Llc | Spin valve element and method of manufacturing same |
| JP5321851B2 (ja) | 2011-03-25 | 2013-10-23 | 株式会社東芝 | 磁気発振素子及びスピン波装置 |
| US8320080B1 (en) | 2011-05-31 | 2012-11-27 | Hitachi Global Storage Technologies Netherlands B.V. | Three-terminal spin-torque oscillator (STO) |
| JP5649704B1 (ja) | 2013-09-18 | 2015-01-07 | 株式会社東芝 | 磁気記録装置 |
-
2018
- 2018-11-21 JP JP2018218165A patent/JP7258332B2/ja active Active
-
2019
- 2019-09-18 WO PCT/JP2019/036543 patent/WO2020105263A1/ja active Application Filing
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