JP5868491B2 - 磁気ランダム・アクセス・メモリのための磁気トンネル接合およびその形成方法 - Google Patents
磁気ランダム・アクセス・メモリのための磁気トンネル接合およびその形成方法 Download PDFInfo
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- G—PHYSICS
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Description
Claims (25)
- 磁気ランダム・アクセス・メモリ(MRAM)のための磁気トンネル接合(MTJ)であって、
可変の磁化方向を有する磁化自由層と、
前記自由層に隣接して位置する絶縁性トンネル・バリアと、
ダスティング層、スペーサ層、および基準層を含む複合固定層であって、前記スペーサ層が前記基準層と前記トンネル・バリアとの間に位置し、前記ダスティング層が前記スペーサ層と前記トンネル・バリアとの間に位置する複合固定層を備え、
前記複合固定層の前記スペーサ層が、2つの非磁性スペーサ層間に配置された中心の磁性スペーサ層を含む3層構造を含む、
磁気トンネル接合。 - 前記中心の磁性スペーサ層がCoFeB、Fe、およびCoFeのうちの1つを含む、請求項1に記載のMTJ。
- 前記中心の磁性層が、約0.1nm〜約0.5nmの厚さを有する、請求項1または2に記載のMTJ。
- 前記複合固定層の前記基準層と第2の固定磁性層との間に位置する合成反強磁性(SAF)スペーサを含むSAF固定層構造であって、前記複合固定層の前記基準層および前記第2の固定磁性層が前記SAFスペーサを介して反平行に結合するSAF固定層構造をさらに備える、請求項1〜3のいずれか一項に記載のMTJ。
- 前記自由層が双極子層と前記トンネル・バリアとの間に位置する双極子層をさらに備える、請求項1〜4のいずれか一項に記載のMTJ。
- 前記自由層がCoFeB|FeまたはFe|CoFeBを含む、請求項1〜5のいずれか一項に記載のMTJ。
- 前記自由層直下のシード層であって、タンタル・マグネシウム(TaMg)を含み、約0.5ナノメートル(nm)〜約3nmの厚さを有するシード層をさらに含む、請求項1〜6のいずれか一項に記載のMTJ。
- 前記複合固定層の前記ダスティング層が、CoFe、Fe、Fe|CoFeBの二重層、CoFe|CoFeBの二重層、CoFeB|Feの二重層、およびCoFeB|CoFeの二重層のうちの1つを含む、請求項1〜7のいずれか一項に記載のMTJ。
- 前記複合固定層の前記ダスティング層が、約0.5nm〜約2nmの厚さを有する、請求項1〜8のいずれか一項に記載のMTJ。
- 前記複合固定層の前記スペーサ層が、クロム(Cr)、ルテニウム(Ru)、窒化チタン(TiN)、チタン(Ti)、バナジウム(V)、窒化タンタル(TaN)、アルミニウム(Al)、マグネシウム(Mg)、およびMgOのうちの1つを含む、請求項1〜9のいずれか一項に記載のMTJ。
- 前記複合固定層の前記基準層が、コバルト−白金(Co|Pt)およびコバルト−パラジウム(Co|Pd)のうちの1つを含む、請求項1〜10のいずれか一項に記載のMTJ。
- 前記SAFスペーサがルテニウムを含み、前記第2の固定磁性層がコバルト−ニッケル(Co|Ni)、Co|Pd、およびCo|Ptのうちの1つを含む、請求項4に記載のMTJ。
- 前記双極子層がコバルト・クロム白金(CoCrPt)、Co|Ni、Co|Pd、およびCo|Ptの多層のうちの1つを含む、請求項5に記載のMTJ。
- 前記双極子層がCoFeB層をさらに含む、請求項13に記載のMTJ。
- 前記複合固定層の前記基準層が前記SAF固定層構造における前記第2の固定磁性層の磁化方向と反対方向に磁化されている、請求項4に記載のMTJ。
- 前記MTJが前記複合固定層の前記基準層と第2の固定磁性層との間に位置する合成反強磁性(SAF)スペーサを含むSAF固定層構造であって、前記複合固定層の前記基準層および前記第2の固定磁性層が前記SAFスペーサを介して反平行に結合するSAF固定層構造と、前記自由層が双極子層と前記トンネル・バリアとの間に位置する双極子層とをさらに備え、前記双極子層および前記SAF固定層構造の前記第2の固定磁性層が同一方向に磁化され、前記複合固定層の前記基準層が前記双極子層および前記第2の固定磁性層の磁化方向と反対方向に磁化されている、請求項1〜3のいずれか一項に記載のMTJ。
- 前記双極子層が前記複合固定層の前記基準層の磁化方向と反対方向に磁化されている、請求項16に記載のMTJ。
- 磁気ランダム・アクセス・メモリ(MRAM)のための磁気トンネル接合(MTJ)を形成する方法であって、
可変の磁化方向を有する磁化自由層を形成するステップと、
前記自由層上に絶縁材料を含むトンネル・バリアを形成するステップと、
ダスティング層、スペーサ層、および基準層を含む複合固定層であって、前記スペーサ層が前記基準層と前記トンネル・バリアとの間に位置し、前記ダスティング層が前記スペーサ層と前記トンネル・バリアとの間に位置する複合固定層を形成するステップとを含み、
前記複合固定層の前記スペーサ層が、2つの非磁性スペーサ層間に配置された中心の磁性スペーサ層を含む3層構造を含む、
方法。 - 前記複合固定層の前記基準層と第2の固定磁性層との間に位置する合成反強磁性(SAF)スペーサを含むSAF固定層構造であって、前記複合固定層の前記基準層および前記第2の固定磁性層が前記SAFスペーサを介して反平行に結合するSAF固定層構造を形成するステップをさらに含む、請求項18に記載の方法。
- 前記自由層が双極子層と前記トンネル・バリアとの間に位置する双極子層を形成するステップをさらに含む、請求項19に記載の方法。
- 前記自由層を形成するステップがタンタル(Ta)またはタンタル・マグネシウム(TaMg)のうちの1つを含むシード層上に前記自由層を成長させるステップを含み、前記シード層が約0.5ナノメートル(nm)〜約3nmの厚さを有する、請求項18〜20のいずれか一項に記載の方法。
- 前記複合固定層の前記基準層が前記SAF固定層構造における前記第2の固定磁性層の磁化方向と反対方向に磁化されている、請求項19〜21のいずれか一項に記載の方法。
- 前記双極子層および前記SAF構造の前記第2の固定磁性層が同一方向に磁化され、前記複合固定層の前記基準層が前記双極子層および前記第2の固定磁性層の磁化方向と反対方向に磁化されている、請求項20に記載の方法。
- 前記双極子層が前記複合固定層の前記基準層の磁化方向と反対方向に磁化されている、請求項23に記載の方法。
- 前記自由層がCoFeB|FeまたはFe|CoFeBを含み、前記複合固定層の前記基準層がコバルト−白金(Co|Pt)およびコバルト−パラジウム(Co|Pd)のうちの1つを含む、請求項18〜24のいずれか一項に記載の方法。
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US13/093,287 US20120267733A1 (en) | 2011-04-25 | 2011-04-25 | Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory |
US13/093,287 | 2011-04-25 | ||
PCT/US2012/029141 WO2012148587A1 (en) | 2011-04-25 | 2012-03-15 | Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory |
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JP2014512702A JP2014512702A (ja) | 2014-05-22 |
JP5868491B2 true JP5868491B2 (ja) | 2016-02-24 |
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US (2) | US20120267733A1 (ja) |
JP (1) | JP5868491B2 (ja) |
KR (1) | KR20130143108A (ja) |
CN (1) | CN103503067B (ja) |
DE (1) | DE112012000741B4 (ja) |
GB (1) | GB2505578B (ja) |
WO (1) | WO2012148587A1 (ja) |
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2011
- 2011-04-25 US US13/093,287 patent/US20120267733A1/en not_active Abandoned
-
2012
- 2012-03-15 KR KR1020137022479A patent/KR20130143108A/ko not_active Application Discontinuation
- 2012-03-15 CN CN201280020050.5A patent/CN103503067B/zh active Active
- 2012-03-15 DE DE112012000741.7T patent/DE112012000741B4/de active Active
- 2012-03-15 JP JP2014508353A patent/JP5868491B2/ja active Active
- 2012-03-15 GB GB1319331.3A patent/GB2505578B/en active Active
- 2012-03-15 WO PCT/US2012/029141 patent/WO2012148587A1/en active Application Filing
- 2012-09-04 US US13/602,533 patent/US8866207B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10573805B2 (en) | 2017-09-21 | 2020-02-25 | Toshiba Memory Corporation | Magnetic memory device |
Also Published As
Publication number | Publication date |
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JP2014512702A (ja) | 2014-05-22 |
GB201319331D0 (en) | 2013-12-18 |
DE112012000741T5 (de) | 2013-12-19 |
US20120267733A1 (en) | 2012-10-25 |
WO2012148587A1 (en) | 2012-11-01 |
KR20130143108A (ko) | 2013-12-30 |
DE112012000741B4 (de) | 2018-05-30 |
GB2505578A (en) | 2014-03-05 |
GB2505578B (en) | 2015-08-26 |
US8866207B2 (en) | 2014-10-21 |
CN103503067B (zh) | 2017-02-15 |
CN103503067A (zh) | 2014-01-08 |
US20130005051A1 (en) | 2013-01-03 |
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