WO2009051178A1 - Substrat de boîtier de del et boîtier de del l'utilisant - Google Patents

Substrat de boîtier de del et boîtier de del l'utilisant Download PDF

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Publication number
WO2009051178A1
WO2009051178A1 PCT/JP2008/068749 JP2008068749W WO2009051178A1 WO 2009051178 A1 WO2009051178 A1 WO 2009051178A1 JP 2008068749 W JP2008068749 W JP 2008068749W WO 2009051178 A1 WO2009051178 A1 WO 2009051178A1
Authority
WO
WIPO (PCT)
Prior art keywords
led package
same
package substrate
pole
electrode
Prior art date
Application number
PCT/JP2008/068749
Other languages
English (en)
Japanese (ja)
Inventor
Yasushi Iwaisako
Kouki Minamoto
Satoshi Kurai
Tsunemasa Taguchi
Original Assignee
Nippon Tungsten Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Tungsten Co., Ltd. filed Critical Nippon Tungsten Co., Ltd.
Priority to CN200880112148.7A priority Critical patent/CN101828275A/zh
Priority to JP2009538130A priority patent/JPWO2009051178A1/ja
Publication of WO2009051178A1 publication Critical patent/WO2009051178A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention porte sur un substrat de boîtier de diode électroluminescente (DEL) qui a d'excellentes caractéristiques de dissipation thermique, et en outre, résout des problèmes de fiabilité, de productivité de masse et de coût en même temps. Un intervalle entre une électrode n (101) connectée à un pôle n (105a) d'un élément DEL (105) et une électrode p (102) connectée à un pôle p (105b) de l'élément DEL (105) est réglé dans une plage de 20-500 µm au niveau de la partie la plus étroite. Une céramique (103) est appliquée dans une partie ou sur l'ensemble de la partie la plus étroite.
PCT/JP2008/068749 2007-10-19 2008-10-16 Substrat de boîtier de del et boîtier de del l'utilisant WO2009051178A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880112148.7A CN101828275A (zh) 2007-10-19 2008-10-16 Led封装基板以及使用该led封装基板的led封装
JP2009538130A JPWO2009051178A1 (ja) 2007-10-19 2008-10-16 Ｌｅｄパッケージ基板およびそれを用いたｌｅｄパッケージ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-272206 2007-10-19
JP2007272206 2007-10-19

Publications (1)

Publication Number Publication Date
WO2009051178A1 true WO2009051178A1 (fr) 2009-04-23

Family

ID=40567440

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068749 WO2009051178A1 (fr) 2007-10-19 2008-10-16 Substrat de boîtier de del et boîtier de del l'utilisant

Country Status (5)

Country Link
JP (1) JPWO2009051178A1 (fr)
KR (1) KR20100093527A (fr)
CN (1) CN101828275A (fr)
TW (1) TW200937681A (fr)
WO (1) WO2009051178A1 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084786A (ja) * 2010-10-14 2012-04-26 Showa Denko Kk Ｌｅｄパッケージ
JP2012094679A (ja) * 2010-10-27 2012-05-17 Showa Denko Kk 基板の製造方法
US20130221386A1 (en) * 2010-11-19 2013-08-29 Koninklijke Philips Electronics N.V. Islanded carrier for light emitting device
JP2013197310A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 発光装置
JP5379320B1 (ja) * 2012-10-15 2013-12-25 有限会社 ナプラ 発光装置
US8618724B2 (en) 2010-07-07 2013-12-31 Asahi Glass Company, Limited Reflective frame for light-emitting element, substrate for light-emitting element and light-emitting device
US8796665B2 (en) 2011-08-26 2014-08-05 Micron Technology, Inc. Solid state radiation transducers and methods of manufacturing
WO2015159371A1 (fr) * 2014-04-15 2015-10-22 住友金属鉱山株式会社 Film de revêtement, procédé de formation d'un film de revêtement, et dispositif à diode électroluminescente
JP2016039321A (ja) * 2014-08-08 2016-03-22 株式会社カネカ リードフレーム、樹脂成型体、表面実装型電子部品、表面実装型発光装置、及びリードフレーム製造方法
KR101610378B1 (ko) * 2009-09-30 2016-04-08 엘지이노텍 주식회사 발광장치
CN105938866A (zh) * 2016-06-13 2016-09-14 开发晶照明（厦门）有限公司 Led支架和led封装结构
TWI566441B (zh) * 2014-04-08 2017-01-11 新世紀光電股份有限公司 發光二極體裝置及用於封裝發光二極體之支架陣列
JP2018182053A (ja) * 2017-04-12 2018-11-15 シチズン電子株式会社 発光装置
JP2021502668A (ja) * 2017-11-08 2021-01-28 フォトニス フランスＰｈｏｔｏｎｉｓ Ｆｒａｎｃｅ セラミックケース内の密閉された電気接続部の製造方法及びそのケースを含む画像増倍管

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101775671B1 (ko) 2010-09-29 2017-09-20 삼성디스플레이 주식회사 발광다이오드 패키지를 갖는 백라이트 어셈블리 및 이를 갖는 표시장치
CN102130278B (zh) * 2010-12-31 2013-04-03 昆山琉明光电有限公司 发光二极管封装
CN102692592B (zh) * 2011-03-22 2014-08-27 展晶科技(深圳)有限公司 发光二极管测试方法及在该方法中使用的发光二极管型材
CN102306695A (zh) * 2011-09-09 2012-01-04 福建省万邦光电科技有限公司 Led光源单杯模块用镀陶瓷层底座
KR101340250B1 (ko) * 2012-09-20 2013-12-10 주식회사 효성 유전체층의 열 방출 특성이 개선된 ｌｅｄ 패키지 및 ｌｅｄ 어레이
CN103022332B (zh) * 2012-11-29 2015-10-21 芜湖德豪润达光电科技有限公司 倒装基板及其制造方法及基于该倒装基板的led封装结构
KR101356475B1 (ko) * 2013-03-27 2014-01-29 한국생산기술연구원 고성능 엘이디 기판 및 이의 제조방법
CN203521475U (zh) * 2013-09-06 2014-04-02 郑榕彬 用于led倒装晶片封装的浮动散热铜片支架及led封装件
US9601673B2 (en) * 2014-11-21 2017-03-21 Cree, Inc. Light emitting diode (LED) components including LED dies that are directly attached to lead frames

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173097A (ja) * 1996-10-09 1998-06-26 Matsushita Electric Ind Co Ltd 熱伝導基板用シート状物とその製造方法及びそれを用いた熱伝導基板とその製造方法
JPH1149049A (ja) * 1997-08-05 1999-02-23 Ohtsu Tire & Rubber Co Ltd :The 金属製クローラ用弾性パッド及び金属製クローラ
JP2001237508A (ja) * 2000-02-24 2001-08-31 Matsushita Electric Works Ltd 回路基板の製造方法
JP2005039100A (ja) * 2003-07-16 2005-02-10 Matsushita Electric Works Ltd 高熱伝導性発光素子用回路部品及び高放熱モジュール
JP2006303396A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Works Ltd 表面実装型発光装置
JP2007073575A (ja) * 2005-09-05 2007-03-22 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2007250979A (ja) * 2006-03-17 2007-09-27 Zeniya Sangyo Kk 半導体パッケージ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173097A (ja) * 1996-10-09 1998-06-26 Matsushita Electric Ind Co Ltd 熱伝導基板用シート状物とその製造方法及びそれを用いた熱伝導基板とその製造方法
JPH1149049A (ja) * 1997-08-05 1999-02-23 Ohtsu Tire & Rubber Co Ltd :The 金属製クローラ用弾性パッド及び金属製クローラ
JP2001237508A (ja) * 2000-02-24 2001-08-31 Matsushita Electric Works Ltd 回路基板の製造方法
JP2005039100A (ja) * 2003-07-16 2005-02-10 Matsushita Electric Works Ltd 高熱伝導性発光素子用回路部品及び高放熱モジュール
JP2006303396A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Works Ltd 表面実装型発光装置
JP2007073575A (ja) * 2005-09-05 2007-03-22 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2007250979A (ja) * 2006-03-17 2007-09-27 Zeniya Sangyo Kk 半導体パッケージ

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101610378B1 (ko) * 2009-09-30 2016-04-08 엘지이노텍 주식회사 발광장치
US8618724B2 (en) 2010-07-07 2013-12-31 Asahi Glass Company, Limited Reflective frame for light-emitting element, substrate for light-emitting element and light-emitting device
JP2012084786A (ja) * 2010-10-14 2012-04-26 Showa Denko Kk Ｌｅｄパッケージ
JP2012094679A (ja) * 2010-10-27 2012-05-17 Showa Denko Kk 基板の製造方法
US9997686B2 (en) 2010-11-19 2018-06-12 Lumileds Llc Islanded carrier for light emitting device
JP2013543277A (ja) * 2010-11-19 2013-11-28 コーニンクレッカ フィリップス エヌ ヴェ 発光デバイスのための点在キャリア
TWI689113B (zh) * 2010-11-19 2020-03-21 荷蘭商皇家飛利浦電子股份有限公司 發光裝置及其製造方法
US20130221386A1 (en) * 2010-11-19 2013-08-29 Koninklijke Philips Electronics N.V. Islanded carrier for light emitting device
US9172018B2 (en) * 2010-11-19 2015-10-27 Koninklijke Philips N.V. Islanded carrier for light emitting device
US20160043295A1 (en) * 2010-11-19 2016-02-11 Koninklijke Philips N.V. Islanded carrier for light emitting device
JP2018022930A (ja) * 2010-11-19 2018-02-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光デバイス及びその製造方法
US8796665B2 (en) 2011-08-26 2014-08-05 Micron Technology, Inc. Solid state radiation transducers and methods of manufacturing
JP2013197310A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 発光装置
JP5379320B1 (ja) * 2012-10-15 2013-12-25 有限会社 ナプラ 発光装置
JP2014099579A (ja) * 2012-10-15 2014-05-29 Napura:Kk 発光装置
TWI566441B (zh) * 2014-04-08 2017-01-11 新世紀光電股份有限公司 發光二極體裝置及用於封裝發光二極體之支架陣列
WO2015159371A1 (fr) * 2014-04-15 2015-10-22 住友金属鉱山株式会社 Film de revêtement, procédé de formation d'un film de revêtement, et dispositif à diode électroluminescente
JP2016039321A (ja) * 2014-08-08 2016-03-22 株式会社カネカ リードフレーム、樹脂成型体、表面実装型電子部品、表面実装型発光装置、及びリードフレーム製造方法
CN105938866A (zh) * 2016-06-13 2016-09-14 开发晶照明（厦门）有限公司 Led支架和led封装结构
JP2018182053A (ja) * 2017-04-12 2018-11-15 シチズン電子株式会社 発光装置
JP2021502668A (ja) * 2017-11-08 2021-01-28 フォトニス フランスＰｈｏｔｏｎｉｓ Ｆｒａｎｃｅ セラミックケース内の密閉された電気接続部の製造方法及びそのケースを含む画像増倍管
JP7245243B2 (ja) 2017-11-08 2023-03-23 フォトニス フランス セラミックケース内の密閉された電気接続部の製造方法及びそのケースを含む画像増倍管

Also Published As

Publication number Publication date
TW200937681A (en) 2009-09-01
CN101828275A (zh) 2010-09-08
KR20100093527A (ko) 2010-08-25
JPWO2009051178A1 (ja) 2011-03-03

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