WO2009041365A1 - 有機トランジスタとその製造方法 - Google Patents
有機トランジスタとその製造方法 Download PDFInfo
- Publication number
- WO2009041365A1 WO2009041365A1 PCT/JP2008/067004 JP2008067004W WO2009041365A1 WO 2009041365 A1 WO2009041365 A1 WO 2009041365A1 JP 2008067004 W JP2008067004 W JP 2008067004W WO 2009041365 A1 WO2009041365 A1 WO 2009041365A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- covalent bond
- gate electrode
- insulating layer
- organic transistor
- gate insulating
- Prior art date
Links
- 230000001815 facial effect Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009534306A JP5070292B2 (ja) | 2007-09-27 | 2008-09-19 | 有機トランジスタとその製造方法 |
US12/680,413 US8178871B2 (en) | 2007-09-27 | 2008-09-19 | Organic transistor and method for producing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007251838 | 2007-09-27 | ||
JP2007-251838 | 2007-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009041365A1 true WO2009041365A1 (ja) | 2009-04-02 |
Family
ID=40511250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/067004 WO2009041365A1 (ja) | 2007-09-27 | 2008-09-19 | 有機トランジスタとその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8178871B2 (ja) |
JP (1) | JP5070292B2 (ja) |
WO (1) | WO2009041365A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010240829A (ja) * | 2009-03-17 | 2010-10-28 | Toshiba Corp | 粒子および近接場光導波路 |
WO2013008269A1 (ja) * | 2011-07-11 | 2013-01-17 | パナソニック株式会社 | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
WO2021161830A1 (ja) * | 2020-02-14 | 2021-08-19 | 東京エレクトロン株式会社 | 成膜方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9171961B2 (en) * | 2012-07-11 | 2015-10-27 | Polyera Corporation | Coating materials for oxide thin film transistors |
US9035287B2 (en) * | 2013-02-01 | 2015-05-19 | Polyera Corporation | Polymeric materials for use in metal-oxide-semiconductor field-effect transistors |
KR102442188B1 (ko) * | 2015-06-19 | 2022-09-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101747264B1 (ko) * | 2015-11-30 | 2017-06-15 | 엘지디스플레이 주식회사 | 표시 장치와 그의 제조 방법 |
WO2020158408A1 (ja) * | 2019-02-01 | 2020-08-06 | 富士フイルム株式会社 | 有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03229710A (ja) * | 1990-02-05 | 1991-10-11 | Matsushita Electric Ind Co Ltd | 高配向性共役ポリマーの製造方法 |
JP2003092411A (ja) * | 2001-07-26 | 2003-03-28 | Lucent Technol Inc | 有機半導体デバイス、有機電界効果トランジスタ及びその製造方法 |
WO2005109539A1 (de) * | 2004-05-03 | 2005-11-17 | Merck Patent Gmbh | Elektronische vorrichtungen enthaltend organische halbleiter |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003258260A (ja) | 2002-02-28 | 2003-09-12 | Nippon Hoso Kyokai <Nhk> | 有機tftおよびその作製方法 |
JP4260508B2 (ja) | 2002-07-18 | 2009-04-30 | シャープ株式会社 | 有機発光素子およびその製造方法 |
DE102004005082B4 (de) | 2004-02-02 | 2006-03-02 | Infineon Technologies Ag | Kondensator mit einem Dielektrikum aus einer selbstorganisierten Monoschicht einer organischen Verbindung und Verfahren zu dessen Herstellung |
JP4502382B2 (ja) * | 2004-11-02 | 2010-07-14 | キヤノン株式会社 | 有機トランジスタ |
-
2008
- 2008-09-19 JP JP2009534306A patent/JP5070292B2/ja not_active Expired - Fee Related
- 2008-09-19 US US12/680,413 patent/US8178871B2/en not_active Expired - Fee Related
- 2008-09-19 WO PCT/JP2008/067004 patent/WO2009041365A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03229710A (ja) * | 1990-02-05 | 1991-10-11 | Matsushita Electric Ind Co Ltd | 高配向性共役ポリマーの製造方法 |
JP2003092411A (ja) * | 2001-07-26 | 2003-03-28 | Lucent Technol Inc | 有機半導体デバイス、有機電界効果トランジスタ及びその製造方法 |
WO2005109539A1 (de) * | 2004-05-03 | 2005-11-17 | Merck Patent Gmbh | Elektronische vorrichtungen enthaltend organische halbleiter |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010240829A (ja) * | 2009-03-17 | 2010-10-28 | Toshiba Corp | 粒子および近接場光導波路 |
US8475685B2 (en) | 2009-03-17 | 2013-07-02 | Kabushiki Kaisha Toshiba | Particle and near-field optical waveguide |
WO2013008269A1 (ja) * | 2011-07-11 | 2013-01-17 | パナソニック株式会社 | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
WO2021161830A1 (ja) * | 2020-02-14 | 2021-08-19 | 東京エレクトロン株式会社 | 成膜方法 |
JP7486321B2 (ja) | 2020-02-14 | 2024-05-17 | 東京エレクトロン株式会社 | 成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100237337A1 (en) | 2010-09-23 |
JPWO2009041365A1 (ja) | 2011-01-27 |
US8178871B2 (en) | 2012-05-15 |
JP5070292B2 (ja) | 2012-11-07 |
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