WO2009038004A1 - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ Download PDF

Info

Publication number
WO2009038004A1
WO2009038004A1 PCT/JP2008/066330 JP2008066330W WO2009038004A1 WO 2009038004 A1 WO2009038004 A1 WO 2009038004A1 JP 2008066330 W JP2008066330 W JP 2008066330W WO 2009038004 A1 WO2009038004 A1 WO 2009038004A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetization
region
magnetic
random access
access memory
Prior art date
Application number
PCT/JP2008/066330
Other languages
English (en)
French (fr)
Inventor
Tetsuhiro Suzuki
Shunsuke Fukami
Kiyokazu Nagahara
Norikazu Ohshima
Nobuyuki Ishiwata
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009533115A priority Critical patent/JP5327543B2/ja
Publication of WO2009038004A1 publication Critical patent/WO2009038004A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　磁気異方性をもつ強磁性層である磁化記録層を具備し、前記磁化記録層が第１磁化領域から第Ｎ磁化領域まで（Ｎ≧３）を有し、前記磁化領域のうち、第１磁化領域から第Ｍ磁化領域まで（Ｍ≧Ｎ－１）が反転可能な磁化を有する第１磁化反転領域から第Ｍ磁化反転領域であり、前記第Ｋ磁化領域が前記第Ｌ磁化領域（Ｌ≠Ｋ）と前記第Ｊ磁化領域（Ｊ≠Ｋ、Ｊ≠Ｌ）を経由することなく接続されており、かつ、前記第Ｋ磁化領域の一端が他の磁性領域と接続していない。データ書込みの際には、前記第１磁化反転領域から前記第Ｍ磁化反転領域までの情報と書き込む情報に応じて、前記第１磁化反転領域から前記第Ｍ磁化反転領域までの領域から他の前記磁化領域に順次電流を印加する。磁壁移動型ＭＲＡＭのセル面積を抑制することが可能となる。
PCT/JP2008/066330 2007-09-20 2008-09-10 磁気ランダムアクセスメモリ WO2009038004A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009533115A JP5327543B2 (ja) 2007-09-20 2008-09-10 磁気ランダムアクセスメモリ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-244084 2007-09-20
JP2007244084 2007-09-20

Publications (1)

Publication Number Publication Date
WO2009038004A1 true WO2009038004A1 (ja) 2009-03-26

Family

ID=40467822

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066330 WO2009038004A1 (ja) 2007-09-20 2008-09-10 磁気ランダムアクセスメモリ

Country Status (2)

Country Link
JP (1) JP5327543B2 (ja)
WO (1) WO2009038004A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293183B2 (en) 2011-08-11 2016-03-22 Renesas Electronics Corporation Magnetoresistive random access memory

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002056665A (ja) * 2000-06-20 2002-02-22 Hewlett Packard Co <Hp> 磁気的に安定な磁気抵抗メモリ素子
JP2006504210A (ja) * 2002-03-27 2006-02-02 イーストゲイト インベストメンツ リミテッド データ記憶装置
WO2006090656A1 (ja) * 2005-02-23 2006-08-31 Osaka University パルス電流による磁壁移動に基づいた磁気抵抗効果素子および高速磁気記録装置
WO2007015474A1 (ja) * 2005-08-01 2007-02-08 Japan Science And Technology Agency 磁気メモリー
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
JP2007201059A (ja) * 2006-01-25 2007-08-09 Toshiba Corp 磁気素子、磁気記録装置及び書き込み方法
WO2007119446A1 (ja) * 2006-03-24 2007-10-25 Nec Corporation Ｍｒａｍ、及びｍｒａｍのデータ読み書き方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002056665A (ja) * 2000-06-20 2002-02-22 Hewlett Packard Co <Hp> 磁気的に安定な磁気抵抗メモリ素子
JP2006504210A (ja) * 2002-03-27 2006-02-02 イーストゲイト インベストメンツ リミテッド データ記憶装置
WO2006090656A1 (ja) * 2005-02-23 2006-08-31 Osaka University パルス電流による磁壁移動に基づいた磁気抵抗効果素子および高速磁気記録装置
WO2007015474A1 (ja) * 2005-08-01 2007-02-08 Japan Science And Technology Agency 磁気メモリー
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
JP2007201059A (ja) * 2006-01-25 2007-08-09 Toshiba Corp 磁気素子、磁気記録装置及び書き込み方法
WO2007119446A1 (ja) * 2006-03-24 2007-10-25 Nec Corporation Ｍｒａｍ、及びｍｒａｍのデータ読み書き方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293183B2 (en) 2011-08-11 2016-03-22 Renesas Electronics Corporation Magnetoresistive random access memory

Also Published As

Publication number Publication date
JP5327543B2 (ja) 2013-10-30
JPWO2009038004A1 (ja) 2011-01-06

Similar Documents

Publication Publication Date Title
CN106875969B (zh) 磁存储器
TWI655633B (zh) Semiconductor memory device
KR100862183B1 (ko) 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자
US6891748B2 (en) MRAM having memory cell array in which cross-point memory cells are arranged by hierarchical bit line scheme and data read method thereof
WO2008120482A1 (ja) 磁気ランダムアクセスメモリ
US20020080643A1 (en) Magnetic random access memory
CN103489474A (zh) 包括源极线电压产生器的磁阻存储器设备
WO2009019947A1 (ja) 磁壁ランダムアクセスメモリ
CN103594107A (zh) 磁阻存储设备的架构
IL200344A0 (en) Magnetic tunnel junction magnetic memory
JP2007059879A5 (ja)
US20090316475A1 (en) Information storage devices and methods of operating the same
MX2009010756A (es) Memoria de acceso aleatorio magnetoresistiva de momento de torsion de transferencia de giro y metodos de diseño.
US8817530B2 (en) Data-masked analog and digital read for resistive memories
WO2009054180A1 (ja) 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
US20180277743A1 (en) Semiconductor memory device
US8982613B2 (en) Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
WO2009037910A1 (ja) 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子
WO2009057504A1 (ja) 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法
JP6630035B2 (ja) 磁気トンネル接合素子及び磁気ランダムアクセスメモリ
WO2009038004A1 (ja) 磁気ランダムアクセスメモリ
WO2006083402A3 (en) Toggle memory burst
US9728233B2 (en) Serial magnetic logic unit architecture
JP2001273758A (ja) 磁気メモリ
Vigo-Cotrina et al. Writing and storing information in an array of magnetic vortex nanodisks using their azimuthal modes

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08831628

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009533115

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08831628

Country of ref document: EP

Kind code of ref document: A1