KR100862183B1 - 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자 - Google Patents
강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자 Download PDFInfo
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- KR100862183B1 KR100862183B1 KR1020070065460A KR20070065460A KR100862183B1 KR 100862183 B1 KR100862183 B1 KR 100862183B1 KR 1020070065460 A KR1020070065460 A KR 1020070065460A KR 20070065460 A KR20070065460 A KR 20070065460A KR 100862183 B1 KR100862183 B1 KR 100862183B1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Abstract
Description
Claims (8)
- 기판과;상기 기판 상에 형성되고, 쓰기(write) 동작시 제 1 전류라인과 제 2 전류라인이 교차하는 셀 안에 펄스 형태로 전류를 인가하여 유도 자기장을 형성하고 자기장의 방향(Ø)과 세기(M)를 조절하여 자기 이방성을 갖는 강자성 재료를 단일 도메인 상태 또는 다중 도메인 상태로 만들고,상기 단일 도메인 상태 또는 다중 도메인 상태에 따라 달라지는 다중 상태에 대한 평면 홀 저항 값 또는 자기 저항 값을 기록하여 다중의 정보를 저장하는 강자성 반도체층과;상기 강자성 반도체층 상에 형성된 절연막과;상기 절연막 상에 형성된 제 1전류라인과;상기 제 1전류라인 상에 형성된 절연막 및;상기 절연막 상에 형성된 제 2전류라인을 포함하는 것을 특징으로 하는 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기 기억 소자.
- 기판과;상기 기판 상에 형성된 제 1전류라인과;상기 제 1전류라인 상에 형성된 절연막과;상기 절연막 상에 형성되고, 단일 또는 다중 도메인 상태를 이용하여 다중의 정보를 평면홀 효과 또는 자기 저항을 통해 저장하고 센싱하는 강자성 반도체층과;상기 강자성 반도체층 상에 형성된 절연막과;상기 절연막 상에 형성된 제 2전류라인을 포함하는 것을 특징으로 하는 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기 기억 소자.
- 제 2항에 있어서,상기 강자성 반도체층은쓰기(write) 동작시 상기 제 1 전류라인과 제 2 전류라인이 교차하는 셀 안에 펄스 형태로 전류를 인가하여 유도 자기장을 형성하고 자기장의 방향(Ø)과 세기(M)를 조절하여 자기 이방성을 갖는 강자성 재료를 단일 도메인 상태 또는 다중 도메인 상태로 만들고,상기 단일 도메인 상태 또는 다중 도메인 상태에 따라 달라지는 다중 상태에 대한 평면 홀 저항 값 또는 자기 저항 값을 기록하여 다중의 정보를 저장하는 것을 특징으로 하는 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기 기억 소자.
- 제 3항에 있어서,상기 다중 도메인 상태는자기장의 방향과 세기에 따라 다중 도메인의 깨어진 정도를 조절할 수 있으며, 평면 홀 저항값 또는 자기 저항 값을 이용하여 도메인이 어느 정도 깨어져 있는지 확인할 수 있는 것을 특징으로 하는 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기 기억 소자.
- 제 1항 또는 제 2항에 있어서,상기 강자성 반도체층은읽기(Read) 동작시 전류라인에 센싱 전류를 흘려보내서 저장된 평면 홀 저항 또는 자기 저항 값을 읽는 것을 특징으로 하는 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기 기억 소자.
- 제 1항 또는 제 2항에 있어서,상기 강자성 반도체층은GaMnAs로 구성된 것을 특징으로 하는 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기 기억 소자.
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KR1020070065460A KR100862183B1 (ko) | 2007-06-29 | 2007-06-29 | 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자 |
US11/956,925 US7742333B2 (en) | 2007-06-29 | 2007-12-14 | Magnetic memory device using domain structure and multi-state of ferromagnetic material |
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KR1020070065460A KR100862183B1 (ko) | 2007-06-29 | 2007-06-29 | 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자 |
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PL421937A1 (pl) * | 2017-06-19 | 2019-01-02 | Instytut Fizyki Polskiej Akademii Nauk | Sposób otrzymywania porowatej warstwy półprzewodnika ferromagnetycznego |
CN109243512A (zh) * | 2018-09-12 | 2019-01-18 | 山东大学 | 一种控制反铁磁层及钉扎层磁畴结构在磁性隧道结中实现多态数据存储的方法 |
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KR101041828B1 (ko) * | 2009-05-19 | 2011-06-17 | 고려대학교 산학협력단 | 다축 자화물질 단일층을 이용한 자기논리소자 |
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