WO2009035002A1 - 静電チャック - Google Patents

静電チャック Download PDF

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Publication number
WO2009035002A1
WO2009035002A1 PCT/JP2008/066340 JP2008066340W WO2009035002A1 WO 2009035002 A1 WO2009035002 A1 WO 2009035002A1 JP 2008066340 W JP2008066340 W JP 2008066340W WO 2009035002 A1 WO2009035002 A1 WO 2009035002A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrostatic chuck
dielectric board
electrode
conductor film
protruding sections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066340
Other languages
English (en)
French (fr)
Inventor
Yoshiki Aruga
Eitarou Morimoto
You Tanaka
Kazuaki Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to US12/666,748 priority Critical patent/US7944677B2/en
Priority to CN200880022898.5A priority patent/CN101802998B/zh
Priority to JP2009532199A priority patent/JP4418032B2/ja
Publication of WO2009035002A1 publication Critical patent/WO2009035002A1/ja
Priority to US12/647,719 priority patent/US20100096262A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

頂面で基板（９）を支持する複数の凸部（１７a）と、凸部（１７a）の周囲の凹部（１７b）とが表面に形成された誘電体板（１４）と、誘電体板（１４）の内部に設けられた電極（１５）と、電極（１５）に電圧を付与する外部電源（１５）とを備えた静電チャック（８）において、前記誘電体板（１４）は、少なくとも凸部（１７a）の頂面に設けられている導体被膜（１９）を備え、電極（１５）に電圧が印加されることで、前記導体被膜（１９）が前記基板（９）と当該導体被膜（１９）との間にジョンソンラーベック力を生じさせる凹凸を有する。
PCT/JP2008/066340 2007-09-11 2008-09-10 静電チャック Ceased WO2009035002A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/666,748 US7944677B2 (en) 2007-09-11 2008-09-10 Electrostatic chuck
CN200880022898.5A CN101802998B (zh) 2007-09-11 2008-09-10 静电夹具
JP2009532199A JP4418032B2 (ja) 2007-09-11 2008-09-10 静電チャック
US12/647,719 US20100096262A1 (en) 2007-09-11 2009-12-28 Electrostatic chuck

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-234968 2007-09-11
JP2007234968 2007-09-11

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/647,719 Continuation US20100096262A1 (en) 2007-09-11 2009-12-28 Electrostatic chuck

Publications (1)

Publication Number Publication Date
WO2009035002A1 true WO2009035002A1 (ja) 2009-03-19

Family

ID=40452008

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066340 Ceased WO2009035002A1 (ja) 2007-09-11 2008-09-10 静電チャック

Country Status (4)

Country Link
US (2) US7944677B2 (ja)
JP (2) JP4418032B2 (ja)
CN (1) CN101802998B (ja)
WO (1) WO2009035002A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8139340B2 (en) 2009-01-20 2012-03-20 Plasma-Therm Llc Conductive seal ring electrostatic chuck
WO2014084060A1 (ja) * 2012-11-28 2014-06-05 京セラ株式会社 載置用部材およびその製造方法
US8837108B2 (en) 2011-06-14 2014-09-16 Asahi Glass Company, Limited Glass substrate-holding tool and method for producing an EUV mask blank by employing the same
KR20150101391A (ko) * 2014-02-26 2015-09-03 도쿄엘렉트론가부시키가이샤 정전척, 배치대, 플라즈마 처리 장치, 및 정전척의 제조방법
JP2025508470A (ja) * 2022-02-28 2025-03-26 インテグリス・インコーポレーテッド 電荷散逸構造を有する静電チャック

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WO2010013476A1 (ja) * 2008-07-31 2010-02-04 キヤノンアネルバ株式会社 プラズマ処理装置および電子デバイスの製造方法
JP5293211B2 (ja) * 2009-01-14 2013-09-18 Ｔｏｔｏ株式会社 静電チャックおよび静電チャックの製造方法
US8593779B2 (en) * 2010-01-05 2013-11-26 Nikon Corporation Hybrid electrostatic chuck
JP5936230B2 (ja) * 2010-11-09 2016-06-22 信越ポリマー株式会社 保持治具、取扱治具、一組の保持治具及び被粘着物保持装置
JP2014075372A (ja) * 2010-12-27 2014-04-24 Canon Anelva Corp 静電吸着装置
JP6010296B2 (ja) * 2010-12-28 2016-10-19 東京エレクトロン株式会社 静電チャック
US9329497B2 (en) 2011-02-01 2016-05-03 Asml Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
JP5869899B2 (ja) * 2011-04-01 2016-02-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー
JP6122856B2 (ja) 2011-10-06 2017-04-26 エーエスエムエル ネザーランズ ビー．ブイ． チャック、リソグラフィ装置及びチャックを使用する方法
CN109254501A (zh) * 2012-02-03 2019-01-22 Asml荷兰有限公司 衬底支架、光刻装置、器件制造方法和制造衬底保持器的方法
JP5996276B2 (ja) * 2012-05-31 2016-09-21 京セラ株式会社 静電チャック、吸着方法及び吸着装置
JP6141879B2 (ja) 2012-12-25 2017-06-07 京セラ株式会社 吸着部材およびそれを用いた吸着装置
KR101319785B1 (ko) * 2013-03-18 2013-10-18 주식회사 야스 정전기 부상을 이용한 기판이송장치
KR101511240B1 (ko) * 2013-07-30 2015-04-10 주식회사 에프엔에스 복수의 박막을 가진 정전척
US20150062772A1 (en) * 2013-08-27 2015-03-05 Varian Semiconductor Equipment Associates, Inc Barrier Layer For Electrostatic Chucks
KR101488148B1 (ko) * 2013-09-30 2015-01-29 주식회사 에프엔에스 정전척 제조를 위한 마스크 및 이를 이용한 정전척의 제조방법
EP3073521B1 (en) * 2013-11-22 2022-04-20 Kyocera Corporation Electrostatic chuck
CN106796915B (zh) 2015-04-02 2020-02-18 株式会社爱发科 吸附装置和真空处理装置
CN106024691B (zh) * 2016-05-30 2019-03-08 李岩 一种静电夹具
US10943808B2 (en) * 2016-11-25 2021-03-09 Applied Materials, Inc. Ceramic electrostatic chuck having a V-shape seal band
CN108573893A (zh) * 2017-03-10 2018-09-25 台湾积体电路制造股份有限公司 静电式晶圆吸附座及其制造方法
US10553583B2 (en) * 2017-08-28 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Boundary region for high-k-metal-gate(HKMG) integration technology
SG11202002127RA (en) * 2017-10-09 2020-04-29 Applied Materials Inc Electrostatic chuck for damage-free substrate processing
CN109786312A (zh) * 2017-11-15 2019-05-21 福建钧石能源有限公司 一种太阳能电池载板
WO2020106521A1 (en) * 2018-11-19 2020-05-28 Entegris, Inc. Electrostatic chuck with charge dissipation coating
JP7430489B2 (ja) * 2019-01-16 2024-02-13 セメス株式会社 静電チャック、静電チャック装置
CN110646695B (zh) * 2019-09-29 2021-07-23 潍坊歌尔微电子有限公司 一种静电测试工装
EP4208890A4 (en) * 2020-09-02 2024-10-09 Entegris, Inc. Electrostatic chuck with embossments that comprise diamond-like carbon and deposited silicon-based material, and related methods
JP7159383B2 (ja) * 2020-11-27 2022-10-24 キヤノン株式会社 基板保持盤
TWI853197B (zh) 2020-11-27 2024-08-21 日商佳能股份有限公司 基板保持板和曝光裝置
WO2022144144A1 (en) 2020-12-29 2022-07-07 Asml Holding N.V. Vacuum sheet bond fixturing and flexible burl applications for substrate tables
US11699611B2 (en) * 2021-02-23 2023-07-11 Applied Materials, Inc. Forming mesas on an electrostatic chuck
US12033881B2 (en) * 2021-03-18 2024-07-09 Applied Materials, Inc. Reduced localized force in electrostatic chucking
US12497697B2 (en) * 2021-10-08 2025-12-16 Applied Materials, Inc. Layer with discrete islands formed on a substrate support
EP4206822A1 (en) * 2021-12-28 2023-07-05 ASML Netherlands B.V. Object holder, lithographic apparatus comprising such object holder and methods for object holder

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198577A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002503397A (ja) * 1997-06-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド 基板支持チャックのための被覆層及びそれを製造する方法
JP2003282688A (ja) * 2002-03-27 2003-10-03 Kyocera Corp 静電チャック
JP2004022889A (ja) * 2002-06-18 2004-01-22 Anelva Corp 静電吸着装置
JP2004104114A (ja) * 2002-08-23 2004-04-02 Asml Netherlands Bv チャック、リソグラフィ装置、およびデバイスの製造方法

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KR100511854B1 (ko) 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
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JP5324251B2 (ja) 2008-05-16 2013-10-23 キヤノンアネルバ株式会社 基板保持装置
JP2010087473A (ja) 2008-07-31 2010-04-15 Canon Anelva Corp 基板位置合わせ装置及び基板処理装置

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Publication number Priority date Publication date Assignee Title
JPH05198577A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002503397A (ja) * 1997-06-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド 基板支持チャックのための被覆層及びそれを製造する方法
JP2003282688A (ja) * 2002-03-27 2003-10-03 Kyocera Corp 静電チャック
JP2004022889A (ja) * 2002-06-18 2004-01-22 Anelva Corp 静電吸着装置
JP2004104114A (ja) * 2002-08-23 2004-04-02 Asml Netherlands Bv チャック、リソグラフィ装置、およびデバイスの製造方法

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8139340B2 (en) 2009-01-20 2012-03-20 Plasma-Therm Llc Conductive seal ring electrostatic chuck
US8837108B2 (en) 2011-06-14 2014-09-16 Asahi Glass Company, Limited Glass substrate-holding tool and method for producing an EUV mask blank by employing the same
WO2014084060A1 (ja) * 2012-11-28 2014-06-05 京セラ株式会社 載置用部材およびその製造方法
KR20150101391A (ko) * 2014-02-26 2015-09-03 도쿄엘렉트론가부시키가이샤 정전척, 배치대, 플라즈마 처리 장치, 및 정전척의 제조방법
KR102353796B1 (ko) 2014-02-26 2022-01-19 도쿄엘렉트론가부시키가이샤 정전척, 배치대, 플라즈마 처리 장치, 및 정전척의 제조방법
JP2025508470A (ja) * 2022-02-28 2025-03-26 インテグリス・インコーポレーテッド 電荷散逸構造を有する静電チャック
JP7821312B2 (ja) 2022-02-28 2026-02-26 インテグリス・インコーポレーテッド 電荷散逸構造を有する静電チャック

Also Published As

Publication number Publication date
US20100096262A1 (en) 2010-04-22
US20100284121A1 (en) 2010-11-11
JPWO2009035002A1 (ja) 2010-12-24
CN101802998B (zh) 2014-07-30
JP4418032B2 (ja) 2010-02-17
US7944677B2 (en) 2011-05-17
CN101802998A (zh) 2010-08-11
JP2009272646A (ja) 2009-11-19

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