WO2009031670A1 - ZrO2-In2O3系光記録媒体保護膜形成用スパッタリングターゲット - Google Patents
ZrO2-In2O3系光記録媒体保護膜形成用スパッタリングターゲット Download PDFInfo
- Publication number
- WO2009031670A1 WO2009031670A1 PCT/JP2008/066126 JP2008066126W WO2009031670A1 WO 2009031670 A1 WO2009031670 A1 WO 2009031670A1 JP 2008066126 W JP2008066126 W JP 2008066126W WO 2009031670 A1 WO2009031670 A1 WO 2009031670A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- in2o3
- recording medium
- protective film
- optical recording
- sputtering target
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/12—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on chromium oxide
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/486—Fine ceramics
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008801055165A CN101796214B (zh) | 2007-09-06 | 2008-09-05 | ZrO2-In2O3系光记录介质保护膜形成用溅射靶 |
US12/733,429 US8466077B2 (en) | 2007-09-06 | 2008-09-05 | Sputtering target for forming ZrO2-In2O3 based protective film for optical storage medium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007231670A JP5061802B2 (ja) | 2007-09-06 | 2007-09-06 | 耐割れ性に優れたZrO2−In2O3系光記録媒体保護膜形成用スパッタリングターゲット |
JP2007-231670 | 2007-09-06 |
Publications (1)
Publication Number | Publication Date |
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WO2009031670A1 true WO2009031670A1 (ja) | 2009-03-12 |
Family
ID=40428982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/066126 WO2009031670A1 (ja) | 2007-09-06 | 2008-09-05 | ZrO2-In2O3系光記録媒体保護膜形成用スパッタリングターゲット |
Country Status (5)
Country | Link |
---|---|
US (1) | US8466077B2 (ja) |
JP (1) | JP5061802B2 (ja) |
CN (1) | CN101796214B (ja) |
TW (1) | TWI437112B (ja) |
WO (1) | WO2009031670A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4831258B2 (ja) * | 2010-03-18 | 2011-12-07 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
DE102013016529A1 (de) | 2013-10-07 | 2015-04-09 | Heraeus Deutschland GmbH & Co. KG | Metalloxid-Target und Verfahren zu seiner Herstellung |
JP5800209B2 (ja) * | 2014-04-25 | 2015-10-28 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲットおよびその製造方法 |
CN104952914A (zh) | 2015-04-30 | 2015-09-30 | 京东方科技集团股份有限公司 | 一种氧化物半导体薄膜、薄膜晶体管、制备方法及装置 |
CN105655389B (zh) * | 2016-01-15 | 2018-05-11 | 京东方科技集团股份有限公司 | 有源层、薄膜晶体管、阵列基板、显示装置及制备方法 |
JP6414165B2 (ja) * | 2016-09-06 | 2018-10-31 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット、及び酸化物スパッタリングターゲットの製造方法 |
WO2019155577A1 (ja) * | 2018-02-08 | 2019-08-15 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット、及び酸化物スパッタリングターゲットの製造方法 |
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JP7141276B2 (ja) | 2018-08-09 | 2022-09-22 | デクセリアルズ株式会社 | スパッタリングターゲット |
WO2020044798A1 (ja) * | 2018-08-27 | 2020-03-05 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法 |
JP2020033639A (ja) | 2018-08-27 | 2020-03-05 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法 |
JP7227473B2 (ja) * | 2018-09-25 | 2023-02-22 | 日亜化学工業株式会社 | 光学薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材 |
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JP2021088730A (ja) | 2019-12-02 | 2021-06-10 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法 |
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JP2005056545A (ja) * | 2003-07-24 | 2005-03-03 | Matsushita Electric Ind Co Ltd | 情報記録媒体とその製造方法 |
JP2005267779A (ja) * | 2004-03-19 | 2005-09-29 | Ricoh Co Ltd | 多層相変化型情報記録媒体及びその記録再生方法 |
WO2007063687A1 (ja) * | 2005-12-02 | 2007-06-07 | Matsushita Electric Industrial Co., Ltd. | 情報記録媒体とその製造方法 |
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TWI437112B (zh) | 2014-05-11 |
US20100206725A1 (en) | 2010-08-19 |
US8466077B2 (en) | 2013-06-18 |
JP2009062585A (ja) | 2009-03-26 |
CN101796214A (zh) | 2010-08-04 |
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JP5061802B2 (ja) | 2012-10-31 |
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