WO2009022504A1 - 微細パターン形成方法及び被覆膜形成用材料 - Google Patents

微細パターン形成方法及び被覆膜形成用材料 Download PDF

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Publication number
WO2009022504A1
WO2009022504A1 PCT/JP2008/062042 JP2008062042W WO2009022504A1 WO 2009022504 A1 WO2009022504 A1 WO 2009022504A1 JP 2008062042 W JP2008062042 W JP 2008062042W WO 2009022504 A1 WO2009022504 A1 WO 2009022504A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
resin
coat
coat film
forming method
Prior art date
Application number
PCT/JP2008/062042
Other languages
English (en)
French (fr)
Inventor
Kiyoshi Ishikawa
Jun Koshiyama
Kazumasa Wakiya
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Priority to US12/671,805 priority Critical patent/US20100255429A1/en
Publication of WO2009022504A1 publication Critical patent/WO2009022504A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Abstract

　支持体上に微細かつ良好な形状の樹脂パターンを形成する微細パターン形成方法、及びその微細パターン形成方法に用いられる被覆膜形成用材料を提供する。 　支持体上に感光性樹脂組成物を塗布し、選択的に露光した後、現像して、第一の樹脂パターンを形成し、この第一の樹脂パターンの表面に、水溶性樹脂膜からなる被覆膜を形成して被覆パターンを形成し、この被覆パターンが形成された支持体上に光酸発生剤を含有する樹脂組成物を塗布し、全面露光した後、溶剤で洗浄して、被覆パターンの表面に樹脂膜が形成された第二の樹脂パターンを形成する。被覆膜は、水溶性樹脂及び水溶性架橋剤を含有してなる水溶液から構成される被覆膜形成用材料を用いて形成する。
PCT/JP2008/062042 2007-08-10 2008-07-03 微細パターン形成方法及び被覆膜形成用材料 WO2009022504A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/671,805 US20100255429A1 (en) 2007-08-10 2008-07-03 Fine pattern forming method and coat film forming material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-208777 2007-08-10
JP2007208777A JP2009042582A (ja) 2007-08-10 2007-08-10 微細パターン形成方法及び被覆膜形成用材料

Publications (1)

Publication Number Publication Date
WO2009022504A1 true WO2009022504A1 (ja) 2009-02-19

Family

ID=40350560

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062042 WO2009022504A1 (ja) 2007-08-10 2008-07-03 微細パターン形成方法及び被覆膜形成用材料

Country Status (5)

Country Link
US (1) US20100255429A1 (ja)
JP (1) JP2009042582A (ja)
KR (1) KR20100056458A (ja)
TW (1) TW200908094A (ja)
WO (1) WO2009022504A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7304503B1 (ja) 2022-07-11 2023-07-06 上海伝芯半導体有限公司 Ｅｕｖリソグラフィ方法、およびｅｕｖリソグラフィ装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101654048B1 (ko) 2009-09-02 2016-09-05 삼성전자주식회사 더블 패턴닝 기술을 이용한 반도체 소자 및 제조방법
KR101829399B1 (ko) * 2010-03-04 2018-03-30 삼성전자주식회사 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정
JP5515962B2 (ja) * 2010-03-30 2014-06-11 ソニー株式会社 化学増幅型レジストパターンの改質方法
KR102235611B1 (ko) 2014-06-13 2021-04-02 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법
US11747742B2 (en) * 2017-04-11 2023-09-05 Visera Technologies Company Limited Apparatus and method for removing photoresist layer from alignment mark
US11259417B2 (en) * 2018-03-14 2022-02-22 Lg Chem, Ltd. Embedded-type transparent electrode substrate and method for manufacturing same
US11656550B2 (en) * 2020-09-01 2023-05-23 Tokyo Electron Limited Controlling semiconductor film thickness

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0471222A (ja) * 1990-07-12 1992-03-05 Oki Electric Ind Co Ltd パターン形成方法
JP2005197349A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 微細パターン形成方法及び半導体装置の製造方法
JP2006064851A (ja) * 2004-08-25 2006-03-09 Renesas Technology Corp 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置
JP2006292896A (ja) * 2005-04-07 2006-10-26 Tdk Corp レジストパターンの形成方法、薄膜パターンの形成方法、マイクロデバイス及びその製造方法、並びに架橋性樹脂組成物
JP2007017993A (ja) * 2006-08-22 2007-01-25 Fujitsu Ltd レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3633595B2 (ja) * 2001-08-10 2005-03-30 富士通株式会社 レジストパターン膨潤化材料およびそれを用いた微小パターンの形成方法および半導体装置の製造方法
KR100858594B1 (ko) * 2004-04-23 2008-09-17 토쿄오오카코교 가부시기가이샤 레지스트 패턴 형성방법 및 복합 린스액

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0471222A (ja) * 1990-07-12 1992-03-05 Oki Electric Ind Co Ltd パターン形成方法
JP2005197349A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 微細パターン形成方法及び半導体装置の製造方法
JP2006064851A (ja) * 2004-08-25 2006-03-09 Renesas Technology Corp 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置
JP2006292896A (ja) * 2005-04-07 2006-10-26 Tdk Corp レジストパターンの形成方法、薄膜パターンの形成方法、マイクロデバイス及びその製造方法、並びに架橋性樹脂組成物
JP2007017993A (ja) * 2006-08-22 2007-01-25 Fujitsu Ltd レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7304503B1 (ja) 2022-07-11 2023-07-06 上海伝芯半導体有限公司 Ｅｕｖリソグラフィ方法、およびｅｕｖリソグラフィ装置

Also Published As

Publication number Publication date
TW200908094A (en) 2009-02-16
JP2009042582A (ja) 2009-02-26
KR20100056458A (ko) 2010-05-27
US20100255429A1 (en) 2010-10-07

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