WO2009017155A1 - 高輝度発光ダイオ－ド及びその製造方法 - Google Patents

高輝度発光ダイオ－ド及びその製造方法 Download PDF

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Publication number
WO2009017155A1
WO2009017155A1 PCT/JP2008/063665 JP2008063665W WO2009017155A1 WO 2009017155 A1 WO2009017155 A1 WO 2009017155A1 JP 2008063665 W JP2008063665 W JP 2008063665W WO 2009017155 A1 WO2009017155 A1 WO 2009017155A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting diode
window layer
type
luminance light
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063665
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English (en)
French (fr)
Inventor
Masataka Watanabe
Masato Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of WO2009017155A1 publication Critical patent/WO2009017155A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Led Devices (AREA)

Abstract

　Ｖｆ高不良の発生がなくなるとともにライフ特性が良くかつ輝度の高い赤色の高輝度発光ダイオード、及び当該高輝度発光ダイオードを歩留まりよくかつ生産性よく安定して製造することができる高輝度発光ダイオードの製造方法を提供する。 　ＧａＡｓ基板上に成長せしめられたＡｌＧａＩｎＰの４元発光層と、前記ＡｌＧａＩｎＰの４元発光層の表面上に成長せしめられた発光光の取り出し用のｐ型窓層と、前記ＧａＡｓ基板をエッチング除去した後に前記ＡｌＧａＩｎＰの４元発光層のＧａＡｓに格子整合された裏面に気相エピタキシャル成長せしめられた発光光の取り出し用のｎ型ＧａＰ窓層とを有し、前記ｎ型ＧａＰ窓層の成長初期のｎ型キャリア濃度を高くし続いてｎ型ＧａＰ窓層成長初期以降のｎ型ＧａＰ窓層のｎ型キャリア濃度を前記ｎ型ＧａＰ窓層成長初期のｎ型キャリア濃度より低くするようにした。
PCT/JP2008/063665 2007-07-31 2008-07-30 高輝度発光ダイオ－ド及びその製造方法 Ceased WO2009017155A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-199618 2007-07-31
JP2007199618A JP5324761B2 (ja) 2007-07-31 2007-07-31 高輝度発光ダイオ−ド及びその製造方法

Publications (1)

Publication Number Publication Date
WO2009017155A1 true WO2009017155A1 (ja) 2009-02-05

Family

ID=40304385

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063665 Ceased WO2009017155A1 (ja) 2007-07-31 2008-07-30 高輝度発光ダイオ－ド及びその製造方法

Country Status (3)

Country Link
JP (1) JP5324761B2 (ja)
TW (1) TWI404231B (ja)
WO (1) WO2009017155A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011034080A1 (ja) * 2009-09-15 2011-03-24 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817724B (zh) 2022-09-19 2023-10-01 錼創顯示科技股份有限公司 微型發光元件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068731A (ja) * 1999-08-30 2001-03-16 Showa Denko Kk ＡｌＧａＩｎＰ発光ダイオード
JP2004304090A (ja) * 2003-04-01 2004-10-28 Hitachi Cable Ltd 発光ダイオード
JP2006261266A (ja) * 2005-03-16 2006-09-28 Sharp Corp 半導体発光素子およびその製造方法並びに電子機器
JP2007059756A (ja) * 2005-08-26 2007-03-08 Rohm Co Ltd 半導体発光素子
JP2007165612A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3666444B2 (ja) * 1992-10-15 2005-06-29 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
JP3552642B2 (ja) * 2000-04-13 2004-08-11 日本電気株式会社 半導体発光素子及びその製造方法
JP4569859B2 (ja) * 2003-11-19 2010-10-27 信越半導体株式会社 発光素子の製造方法
JP2005276900A (ja) * 2004-03-23 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子
JP2005277218A (ja) * 2004-03-25 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068731A (ja) * 1999-08-30 2001-03-16 Showa Denko Kk ＡｌＧａＩｎＰ発光ダイオード
JP2004304090A (ja) * 2003-04-01 2004-10-28 Hitachi Cable Ltd 発光ダイオード
JP2006261266A (ja) * 2005-03-16 2006-09-28 Sharp Corp 半導体発光素子およびその製造方法並びに電子機器
JP2007059756A (ja) * 2005-08-26 2007-03-08 Rohm Co Ltd 半導体発光素子
JP2007165612A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011034080A1 (ja) * 2009-09-15 2011-03-24 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
US8659004B2 (en) 2009-09-15 2014-02-25 Showa Denko K.K. Light emitting diode, light emitting diode lamp, and illuminating apparatus
US9112084B2 (en) 2009-09-15 2015-08-18 Showa Denko K.K. Light emitting diode, light emitting diode lamp, and illuminating apparatus

Also Published As

Publication number Publication date
TW200924241A (en) 2009-06-01
JP5324761B2 (ja) 2013-10-23
TWI404231B (zh) 2013-08-01
JP2009038132A (ja) 2009-02-19

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