TW200924241A - High-luminance light-emitting diode and manufacturing method thereof - Google Patents

High-luminance light-emitting diode and manufacturing method thereof Download PDF

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TW200924241A
TW200924241A TW097129066A TW97129066A TW200924241A TW 200924241 A TW200924241 A TW 200924241A TW 097129066 A TW097129066 A TW 097129066A TW 97129066 A TW97129066 A TW 97129066A TW 200924241 A TW200924241 A TW 200924241A
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light
type
window layer
layer
algalnp
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TW097129066A
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Chinese (zh)
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TWI404231B (en
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Masataka Watanabe
Masato Yamada
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Shinetsu Handotai Kk
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

A red-color high-luminance light-emitting diode that eliminates defects caused by high Vf while exhibiting excellent life performance and high luminance, as well as a manufacturing method for the high-luminance light-emitting diode that assures stable manufacturing of the high-luminance light-emitting diode with improved yield and productivity. The high-luminance light-emitting diode has an AlGaInP 4-element luminescent layer that is made grown on a GaAs substrate, a p-type window layer for taking out luminescent light that is made grown on the top surface of the AlGaInP 4-element luminescent layer, and an n-type GaP window layer for taking out luminescent light that is made grown in a vapor phase epitaxial method on the rear side that is lattice-matched to GaAs on the AlGaInP 4-element luminescent layer after etching removal of the GaAs substrate. The n-type carrier density in early phase of growth of the n-type GaP window layer is increased, and then the n-type carrier density of the n-type GaP window layer after early phase of growth of the n-type GaP window layer is made lower than the n-type carrier density in early phase of growth of the n-type GaP window layer.

Description

200924241 九、發明說明 【發明所屬之技術領域】 本發明係爲有關具備兩面磊晶窗層之高亮度發光二極 體及其製造方法。 【先前技術】 以往’作爲高亮度發光二極體用基板之製造方法，知 道有於AlGalnP之4元發光層的兩面，作爲光的窗層，安 裝GaP或GaAsP ’ AlGaAs層之方法（專利文獻1 )。在 此公知的方法之中，對於於AlGalnP之發光層的兩面，製 作光的窗層，經由於基板的上方，將AlGalnP發光層，進 行氣相磊晶成長，在於AlGalnP發光層表面之p型層側， 成長發光光的取出窗層之後，除去基板，接著，於除去基 板的背面，將η型層之發光光的取出窗層，由磊晶成長， 將GaP、GaAsP或AlGaAs作爲成長之時而進行。 但，針對在上述之以往方法，係存在有如以下之問題 點。即，在於晶格匹配於AlGalnP之4元發光層之GaP 的P型層側，成長發光光的取出窗層之後，除去基板，在 於除去基板的背面，將η型層之發光光的取出窗層作爲成 長的工程，作爲此基板係使用溶解於要繼而容易去除之 GaAs。在於晶格匹配於其GaAs的背面，成長GaP或 GaAsP窗層時，有著晶格偏移量變大之問題。因此，經由 對於除去基板的背面，貼合GaP基板之時’製作背面之 發光光的取出GaP窗層者則爲一般（專利文獻2 )。 200924241 但，在貼合中，經由在貼合界面的貼合不良及在貼合 界面的高Vf不良，高AVf不良，而有產率不佳的問題。 爲了解決此，至目前爲止嘗試有經由氫化物氣相磊晶法（ HVPE ) ’於晶格匹配於GaAs之背面，成長 GaP或BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-intensity light-emitting diode having a double-sided epitaxial window layer and a method of manufacturing the same. [Prior Art] As a method of manufacturing a substrate for a high-brightness light-emitting diode, a method of mounting a GaP or GaAsP 'AlGaAs layer as a light window layer on both surfaces of a 4-element light-emitting layer of AlGalnP is known (Patent Document 1) ). In the known method, a light window layer is formed on both surfaces of the light-emitting layer of AlGalnP, and the AlGalnP light-emitting layer is subjected to vapor phase epitaxial growth through the upper surface of the substrate, and the p-type layer on the surface of the AlGalnP light-emitting layer is formed. On the side, after removing the window layer of the luminescent light, the substrate is removed, and then, on the back surface of the substrate, the extraction window of the luminescence light of the n-type layer is grown by epitaxy, and GaP, GaAsP or AlGaAs is grown. get on. However, there are some problems in the above conventional methods. That is, in the P-type layer side of GaP which is lattice-matched to the 4-element light-emitting layer of AlGalnP, after removing the window layer of the light-emitting light, the substrate is removed, and the back surface of the substrate is removed, and the light-emitting light of the n-type layer is taken out of the window layer. As a growth project, GaAs which is easily removed after being used as the substrate is used. In the case where the lattice is matched to the back surface of the GaAs, when the GaP or GaAsP window layer is grown, there is a problem that the lattice shift amount becomes large. Therefore, it is common to take out the GaP window layer which produces the light emission light of the back surface when the GaP substrate is bonded to the back surface of the substrate (Patent Document 2). 200924241 However, in the bonding, the adhesion at the bonding interface is poor and the high Vf at the bonding interface is poor, and the high AVf is poor, and there is a problem that the yield is not good. In order to solve this, attempts have been made so far to lattice-match the back side of GaAs via hydride vapor phase epitaxy (HVPE), to grow GaP or

GaAsP窗層者。但，當前述背面的載體濃度過低時，產生 高Vf不良’高AVf不良，另外，當載體濃度過高時，有 著經由發光光的吸收而招致亮度下降，另外，經由高濃度 之載體的擴散而招致使用壽命降低之問題。 然而’ △ Vf係爲顯示經由高速開關（PMM控制等） ’調光驅動發光元件時之開關反應特性的指標，將經由 2 0mA通電而作爲通電開始之後的順方向電壓Vf，作爲初 期値’將至其後作爲持續通電時遞減之Vf的安定値爲止 之順方向電壓V f的減少値，作爲△ V f所測定。 專利文獻 1 : USP 5,008,718 專利文獻 2: USP 5,376,580 【發明內容】 〔發明欲解決之課題〕 本發明係有鑑於上述之以往技術的問題點所做爲之構 成’本發明之第1目的係提供不會產生高Vf不良之同時 ’使用壽命特性佳，且亮度高之紅色高亮度發光燈者。本 發明之第2目的係提供可產率佳且生產性佳地製造上述高 亮度發光二極體之高亮度發光二極體的製造方法者。本發 明之第3目的係提供可安定製造從以往在貼合基板成爲問 -5- 200924241 題之未有局AVf不良之闻売度發光燈之局免度發光二極 體的製造方法者。 〔爲解決課題之手段〕 爲了解決上述課題，本發明之高亮度發光二極體的第 1形態係其特徵乃具有成長於GaAs基板上之AlGalnP之 4元發光層，和成長於前述AlGalnP之4元發光層之表面 上的發光光之取出用的P型窗層，和在蝕刻除去前述 GaAs基板之後，氣相磊晶成長於晶格匹配於前述 AlGalnP之4元發光層之GaAs的背面的發光光之取出用 的η型GaP窗層（以下，亦有單以η型窗層之情況）， 經由持續提昇前述η型GaP窗層之成長初期的η型載體 濃度，將η型GaP窗層成長初期以後之η型GaP窗層的η 型載體濃度，作爲較前述η型GaP窗層成長初期之η型 載體濃度爲低之時，作爲Vf及△ Vf低且高亮度’亮度劣 化少者。 本發明之高亮度發光二極體之製造方法的第1形態係 屬於製造本發明之第1形態的高亮度發光二極體之方法， 其特徵乃包含經由有機金屬氣相成長法（MOCVD ) ’於 GaAs基板上成長AlGalnP之4元發光層的第1工程，和 於前述AlGalnP之4元發光層之表面上，成長發光光之取 出用的P型窗層的第2工程，和在前述第2工程結束後， 以蝕刻除去前述GaAs基板之第3工程，和於晶格匹配於 前述AlGalnP之4元發光層之GaAs的背面’氣相磊晶成 200924241 長發光光之取出用的η型GaP窗層之第4工程；針對在 前述第4工程，呈作爲持續提昇前述A1 GalnP之4元發光 層之背面側界面附近之η型GaP窗層成長初期的n 體濃度，將η型GaP窗層成長初期以後之η型GaP窗層 的η型載體濃度，作爲較前述η型GaP窗層成長初期之n 型載體濃度爲低者。 前述AlGalnP之4元發光層之背面側界面附近之n型 GaP窗層成長初期的η型載體濃度乃9xl017個/ cm3以上 ，且2x1 018個/ cm3以下，理想係l.lxlO18個/ cm3以上 ，且1.5xl018個/cm3以下爲最佳。 前述AlGalnP之4元發光層之背面側之η型GaP窗 層成長初期之後的η型GaP窗層之η型載體濃度乃3x 1017個/cm3以上，且8xl017個/cm3以下，理想係3·5χ 1017個/ cm3以上，且6x1 017個/ cm3以下爲最佳。 本發明之高亮度發光二極體的第2形態係其特徵乃具 有成長於Ga As基板上之AlGalnP之4元發光層，和成長 於前述AlGalnP之4元發光層之表面上的發光光之取出用 的P型窗層，和在蝕刻除去前述Ga As基板之後，氣相磊 晶成長於晶格匹配於前述AlGalnP之4元發光層之GaAs 的背面的發光光之取出用的η型GaP窗層，經由將在成 長發光光之取出用的P型窗層於前述AlGalnP之4元發光 層之表面上之後的前述GaAs基板之Vf，作爲Vf ( p )之 情況，持續除去前述 GaAs基板，於晶格匹配於前述 AlGalnP之4元發光層之GaAs的背面，將以氣相磊晶成 200924241GaAsP window layer. However, when the carrier concentration on the back surface is too low, high Vf failure is caused, and high AVf is poor. Further, when the carrier concentration is too high, there is a decrease in luminance due to absorption of luminescent light, and diffusion through a carrier having a high concentration. And cause the problem of reduced service life. However, ΔVf is an index indicating the switching reaction characteristics when the light-emitting element is driven by the high-speed switch (such as PMM control), and the forward voltage Vf after the energization is started via 20 mA is used as the initial 値' The decrease in the forward voltage V f from the stability V of the Vf which is decremented at the time of continuous energization is measured as Δ V f . Patent Document 1: USP 5,008,718 Patent Document 2: USP 5,376,580 [Disclosed] The present invention has been made in view of the above-described problems of the prior art, and the first object of the present invention is to provide no A high-brightness illuminating lamp with high Vf and high lifetime characteristics and high brightness will be produced. A second object of the present invention is to provide a method for producing a high-brightness light-emitting diode which can produce the above-described high-brightness light-emitting diode with good productivity and excellent productivity. The third object of the present invention is to provide a method for manufacturing a partial light-emitting diode that can stably manufacture a light-emitting diode that has been conventionally used in a bonded substrate. [Means for Solving the Problems] In order to solve the above problems, the first aspect of the high-intensity light-emitting diode of the present invention is characterized in that it has a 4-element light-emitting layer of AlGalnP grown on a GaAs substrate, and is grown in the above-mentioned AlGalnP 4 a P-type window layer for extracting light emitted from the surface of the light-emitting layer, and after etching and removing the GaAs substrate, vapor-phase epitaxy is grown on the back surface of GaAs lattice-matched to the 4-element light-emitting layer of AlGalnP The n-type GaP window layer for light extraction (hereinafter, there is also a case where an n-type window layer is used alone), and the n-type GaP window layer is grown by continuously increasing the n-type carrier concentration at the initial stage of growth of the n-type GaP window layer When the n-type carrier concentration of the n-type GaP window layer in the initial stage is lower than the n-type carrier concentration in the initial stage of the growth of the n-type GaP window layer, Vf and ΔVf are low and the high-brightness 'lightness deterioration is small. The first aspect of the method for producing a high-intensity light-emitting diode according to the present invention is a method for producing a high-intensity light-emitting diode according to the first aspect of the present invention, which is characterized in that it comprises a metal vapor phase growth (MOCVD) method. The first project of growing a 4-element light-emitting layer of AlGalnP on a GaAs substrate, and the second process of growing a P-type window layer for illuminating light emission on the surface of the 4-element luminescent layer of AlGalnP, and the second After the completion of the process, the third process of etching the GaAs substrate is removed, and the back surface of the GaAs which is lattice-matched to the 4-element light-emitting layer of the AlGalnP is vapor-phase epitaxially formed into an n-type GaP window for the long-light emission of 200924241. In the fourth project, the n-th body concentration in the initial stage of the growth of the n-type GaP window layer in the vicinity of the back side interface of the four-element light-emitting layer of the A1 GalnP is increased, and the n-type GaP window layer is grown. The n-type carrier concentration of the n-type GaP window layer after the initial stage is lower than the n-type carrier concentration at the initial stage of growth of the n-type GaP window layer. The n-type carrier concentration of the n-type GaP window layer in the vicinity of the back surface side interface of the 4-membered light-emitting layer of the AlGalnP is 9xl017/cm3 or more, and 2x1 018/cm3 or less, and ideally l.lxl18/cm3 or more. And 1.5xl018 / cm3 or less is the best. The n-type carrier concentration of the n-type GaP window layer after the initial stage of growth of the n-type GaP window layer on the back side of the 4-element light-emitting layer of AlGalnP is 3 x 1017 pieces/cm3 or more, and 8 x 1017 pieces/cm3 or less, and an ideal system is 3·5χ. 1017 / cm3 or more, and 6x1 017 / cm3 or less is the best. The second aspect of the high-intensity light-emitting diode of the present invention is characterized in that it has a 4-element light-emitting layer of AlGalnP grown on a Ga As substrate, and a light-emitting light which is grown on the surface of the 4-element light-emitting layer of the AlGalnP a P-type window layer, and an η-type GaP window layer for extracting luminescent light which is epitaxially grown on the back surface of GaAs lattice-matched to the 4-element luminescent layer of AlGalnP after etching and removing the Ga As substrate The Vf of the GaAs substrate after the P-type window layer for removing the emitted luminescent light on the surface of the 4-element luminescent layer of the AlGalnP is continuously removed as the Vf (p), and the GaAs substrate is continuously removed. The lattice is matched to the back side of the GaAs of the 4-element luminescent layer of the aforementioned AlGalnP, which will be epitaxially formed into a vapor phase of 200924241.

Vf 成 濃 係 > 於 和 取 5 於 成 在 刖 板 去 配 相 ) 型 長發光光之取出用的η型GaP窗層之狀態的Vf，作爲 (total)情況之 Vf(n) = Vf(total) - Vf(p)，呈 爲O.lVSVf(n) S0.25V地控制η型窗層之η型載體 度之時，作爲△ Vf低且高亮度，亮度劣化少者。 本發明之高亮度發光二極體之製造方法的第2形態 屬於製造本發明之第2形態的高亮度發光二極體之方法 其特徵乃包含經由有機金屬氣相成長法（MOCVD )， GaAs基板上成長AlGalnP之4元發光層的第1工程， 於前述AlGalnP之4元發光層之表面上，成長發光光之 出用的P型窗層的第2工程，和在前述第2工程結束後 以蝕刻除去前述G a A s基板之第3工程，和於晶格匹配 前述AlGalnP之4元發光層之GaAs的背面，氣相磊晶 長發光光之取出用的η型GaP窗層之第4工程；針對 前述第2工程，將在成長發光光之取出用的p型窗層於 述AlGalnP之4元發光層之表面上之後的前述GaAs基 之Vf，作爲Vf ( p )之情況，針對在前述第3工程’除 前述GaAs基板，接著針對在前述第4工程，於晶格匹 於前述AlGalnP之4元發光層之GaAs的背面’將以氣 磊晶成長發光光之取出用的η型GaP窗層之狀態的Vf 作爲 Vf( total)情況之 Vf( n) =Vf( total ) —Vf(p ，呈成爲〇_lVSVf(n) S0.25V地控制n型窗層之n 載體濃度者。 〔發明之效果〕 -8- 200924241 本發明之高亮度發光二極體係爲不會產生高 之同時，使用壽命特性佳，且亮度高之紅色高亮 極體，如根據本發明方法之第1形態，可產率佳 佳地製造本發明之高亮度發光二極體者。如根據 法之第2形態，達成可安定製造從以往在貼合基 題之未有高AVf不良之高亮度發光燈之效果。 【實施方式】 以下，對於本發明之實施形態，依據附加圖 說明，但圖示例乃顯示本發明之理想實施形態之 未脫離本發明之技術思想下，當然可做各種變形 如圖1及圖2所示，針對在本發明方法之第 首先，經由有機金屬氣相成長法（MOCVD )，甘 板10上，使AlGalnP之4元發光層12成長（ 第1工程，圖2之步驟100 )。作爲GaAs基板 280/ζιη±1〇βπι程度厚度之構成。AlGalnP之4 12之厚度乃8/^m程度。接著，於前述AlGalnP 光層12之表面上，經由氣相磊晶成長（VPE ) 摻雜Zn等之p型不純物而使發光光之取出用的 14成長（圖1(b)第2工程、圖2之步驟10: 型窗層14之載體濃度乃6xl017個/ cm3以上 1〇18個/ cm3以下程度。其p型窗層14係使 GaAsP或GaP層成長爲150；zm±30//m之厚度所 前述第2工程結束後，將前述GaAs基板10，經Vf becomes a concentration of Vf in the state of the n-type GaP window layer for the extraction of the long-length illuminating light, and Vf(n) = Vf (in the case of total) Total) - Vf(p), when O.lVSVf(n) S0.25V is used to control the n-type carrier degree of the n-type window layer, the ΔVf is low and the luminance is low, and the luminance deterioration is small. A second aspect of the method for producing a high-intensity light-emitting diode according to the present invention is a method for producing a high-intensity light-emitting diode according to a second aspect of the present invention, characterized in that it comprises a GaAs substrate via an organometallic vapor phase epitaxy (MOCVD) method. The first project of growing the 4-element light-emitting layer of AlGalnP, the second project of growing the P-type window layer for emitting light on the surface of the 4-element light-emitting layer of AlGalnP, and after the completion of the second project The third process of etching the etched and removed GaAs-type back surface of the G a A s substrate and the GaAs back surface of the 4-element luminescent layer of the AlGalnP, and the fourth process of extracting the n-type GaP window layer for vapor-phase epitaxial long-light emission In the second project, the Vf of the GaAs group after the p-type window layer for extracting the emitted luminescent light on the surface of the 4-element luminescent layer of AlGalnP is referred to as Vf (p) In the third project, in addition to the GaAs substrate, the n-type GaP window for extracting the luminescent light by gas epitaxial growth in the back surface of the GaAs of the 4-element luminescent layer of the AlGalnP in the fourth project is described. Vf of the state of the layer as the Vf (total) case Vf( n) = Vf( total ) - Vf(p , which is the n carrier concentration of the n-type window layer which becomes 〇_lVSVf(n) S0.25V. [Effect of the invention] -8- 200924241 The present invention is high The brightness light-emitting diode system is a red high-brightness body which does not generate high, has good life characteristics, and has high brightness. For example, according to the first aspect of the method of the present invention, the high brightness of the present invention can be produced with good yield. According to the second aspect of the method, it is possible to achieve an effect of stably producing a high-intensity illuminating lamp which has no high AVf defect from the conventional bonding problem. [Embodiment] Hereinafter, the present invention is implemented. The exemplification is based on the additional drawings, but the illustrated examples show the ideal embodiments of the present invention without departing from the technical idea of the present invention. Of course, various modifications can be made as shown in FIGS. 1 and 2 for the method of the present invention. First, the 4-element luminescent layer 12 of AlGalnP is grown on the slab 10 via the organometallic vapor phase growth method (MOCVD) (first project, step 100 in Fig. 2). As a GaAs substrate 280/ζιη±1〇βπι degree The composition of the thickness. The thickness of AlGalnP 4 12 is 8/ Then, on the surface of the AlGalnP optical layer 12, a p-type impurity such as Zn is doped by vapor phase epitaxial growth (VPE) to grow the light for light extraction (Fig. 1(b) 2 Engineering, Step 10 of Figure 2: The carrier concentration of the type window layer 14 is 6xl017/cm3 or more and 1〇18/cm3 or less. The p-type window layer 14 is such that the GaAsP or GaP layer grows to 150; zm±30 / / thickness of m after the completion of the second project, the GaAs substrate 10,

Vf不良 度發光二 且生產性 本發明方 板成爲問 面而進行 構成，在 者。 1形態， > GaAs 基 圖 1(a) 1 〇係使用 元發光層 之4元發 反應機， p型窗層 2 )。其 p ，且 1 ·6χ AlGaAs ， 得到。在 由硫酸* -9- 200924241 過氧化氫水等之藥劑加以蝕刻除去（圖1 ( C )第3工程 、圖2之步驟104)。接著，於晶格匹配於前述AlGalnP 之4兀發光層12之GaAs的背面，經由氣相磊晶成長（ VPE )反應機’摻雜Si、Te或S等之n型不純物而使發 光光之取出用的η型GaP窗層16，作爲氣相磊晶成長（ 圖1(d)第4工程、圖2之步驟106)。 針對在本發明方法之第1形態，在前述第4工程，提 昇前述AlGalnP之4元發光層1 2之背面側界面附近之η 型GaP窗層成長初期的η型載體濃度。例如，前述 AlGalnP之4元發光層之背面側界面附近之η型GaP窗層 成長初期的高載體濃度窗層16a之η型載體濃度乃9xl017 個/cm3以上’且2xl018個/cm3以下，理想係1·1Χ1018 個/ cm3以上，且1·5χ1018個/ cm3以下爲最佳。另外， 該高載體濃度窗層16a之厚度乃0.1#m〜理想係 如作爲1 m〜5 v m程度即可。 接著，將η型GaP窗層成長初期以後之η型GaP窗 層的η型載體濃度，作爲較前述η型GaP窗層成長初期 之η型載體濃度爲低者。例如，前述AlGalnP之4元發光 層之背面側之η型GaP窗層成長初期之後的低載體濃度 窗層16b之η型載體濃度乃3χ1017個/ cm3以上，且 8χ1017個/ cm3以下，理想係3.5χ1017個/ cm3以上，且 6χ1017個/ cm3以下爲最佳。另外，該低載體濃度窗層 16b之厚度係如作爲125 // m±30 /z m程度即可。 本發明之高亮度發光二極體的構成係如圖1(d)及 -10- 200924241 圖3所示’經由具有AlGalnP之4元發光層，和成長於前 述AlGalnP之4元發光層之p型層側的發光光之取出用的 P型窗層’和氣相磊晶成長於晶格匹配於前述AlGalnP之 4元發光層之GaAs的背面的發光光之取出用的n型GaP 窗層’提昇前述η型GaP窗層成長初期之η型載體濃度 ，例如作爲9χ1017個/cm3以上，且2χ1〇ΐ8個/cm3以下 ’理想係l.lxlO18個/ cm3以上，且1·5χ1〇18個/ cm3以 下’接著’將η型GaP窗層成長初期以後之n型GaP窗 層的η型載體濃度，作爲較前述η型GaP窗層成長初期 之η型載體濃度爲低，例如作爲3xl017個/ cm3以上，且 8xl〇18個/ cm3以下，理想係3·5χ10ΐ7個/ cm3以上，且 6xl〇17個/ cm3以下之時，作爲vf及△ Vf低且高亮度， 亮度劣化少者。 接著，對於本發明之高亮度發光二極體之製造方法的 第2形態’經由圖4及圖5進行說明圖。圖4乃模式性顯 示本發明之高亮度發光二極體之製造方法的第2形態之工 程順序一例說明圖。圖5乃圖4之工程順序的流程圖。本 發明方法之第2形態之第1工程〜第3工程係實施與本發 明方法之第1形態之情況同樣的工程。即，經由有機金屬 氣相成長法（MOCVD)，於 GaAs基板 10上，使 AlGalnP之4元發光層12成長（圖4(a)第1工程，圖 5之步驟100)。接著，於前述AlGalnP之4元發光層I2 之表面上，經由氣相磊晶成長（VPE)反應機，摻雜Zn 等之P型不純物而使發光光之取出用的p型窗層14成長 -11 - 200924241 (圖4(b)第2工程、圖5之步驟102)。在前述第 程結束後，將前述GaAs基板1 〇 ’經由硫酸·過氧化 等之藥劑加以蝕刻除去（圖4 ( c )第3工程、圖5 驟104 )。接著，於晶格匹配於前述AlGalnP之4元 層12之GaAs的背面，經由氣相嘉晶成長（VPE)反 ，摻雜Si、Te或S等之η型不純物而使發光光之取 的η型GaP窗層17，作爲氣相磊晶成長（圖4(d) 工程、圖5之步驟106A)。 針對在本發明方法之第2形態係其特徵乃經由在 第2工程，將在成長發光光之取出用的p型窗層14 述AlGalnP之4元發光層12之表面上之後的前述 基板12之Vf，作爲Vf ( p )之情況，在前述第3工 除去前述GaAs基板12，接著在前述第4工程，於晶 配於前述AlGalnP之4元發光層之GaAs的背面，將 相磊晶成長發光光之取出用的η型GaP窗層1 7之狀 Vf，作爲 Vf ( total )情況之 Vf ( n ) = Vf ( total ) (P )，呈成爲O.lVSVf(n) S0.25V地控制n型 17之η型載體濃度之時，製造^vf低且高亮度，亮 化少之高亮度發光二極體者。 經由切斷上述之本發明之高亮度發光二極體而作 片，於該晶片附加電極加工而製作紅色燈之時，得到 度之紅色燈。 實施例 2工 氫水 之步 發光 應機 出用 第4 前述 於前 GaAs 程， 格匹 以氣 態的 一 Vf 窗層 度劣 爲晶 高亮 -12- 200924241 以下，舉出本發明之實施例，更詳細進行說明，但此 等實施例係爲例示所示之構成’當然’並非限定於此者。 (實施例1及比較例1 ) 如圖1及2所示，準備2 80 /z m厚度之GaAs基板’ 於其GaAs基板上，經由有機金屬氣相成長法（MOCVD ) ，成長8/zm厚度之AlGalnP之4元發光層。接著’於前 述AlGalnP之4元發光層之表面上，經由VPE反應機， 摻雜Zn而成長150〆m發光光之取出用的p型GaP窗層 。在使前述P型GaP窗層成長之後’將前述GaAs基板’ 經由硫酸·過氧化氫水，進行蝕刻而除去。接著’於晶格 匹配於前述AlGalnP之4元發光層之GaAs的背面’經由 VPE反應機，摻雜Te而使發光光之取出用的p型GaP窗 層作爲氣相磊晶成長。 將前述AlGalnP之4元發光層之背面側界面附近之η 型GaP窗層成長初期的高載體濃度窗層之η型載體濃度 ，作爲l.OxlO18個/ cm3，另外，該高載體濃度窗層之厚 度係作爲1 # m。 另一方面，將前述AlGalnP之4元發光層之背面側之 η型GaP窗層成長初期之後的低載體濃度窗層之η型載體 濃度，作爲6.OxlO17個/ cm3，另外，該低載體濃度窗層 之厚度係作爲125#m。將實施例1之11型窗層的載體濃 度分布，與比較例1(將η型窗層的載體濃度作爲 1 0 18個/ cm3，而其他係由和實施例1同樣的步驟’製作 -13- 200924241 發光一極體）问時顯不於圖6。 〔實驗例1〕 與實施例1同樣作爲而製作發光二極體，確認其性能 。首先’調查η層界面的載體濃度與^vf之關係，將兩 者的相關關係，作爲圖表而顯示於圖7。由圖7的圖表， 觀察到η層界面的載體濃度爲9x1 017個/ cm3以上，△ Vf 乃成爲200mV以下者。另外，調查Vf ( total ) — Vf ( p )與AVf之關係，將兩者的相關關係，作爲圖表而顯示 於圖8。由圖8的圖表，觀察到如爲0.1VSVf(n)S 0.25乂，八¥【乃成爲20〇111¥以下者。更加地，調查11層界 面的載體濃度與使用壽命之關係，將兩者的相關關係，作 爲圖表而顯示於圖9。由圖9的圖表，觀察到如爲2xl018 以下，使用壽命乃成爲94.5 %以上者。更加地，調查η型 GaP窗層成長初期之後的η型GaP窗層之載體濃度與輸出 之關係，將兩者的相關關係，作爲圖表而顯示於圖1〇。 由圖10的圖表，觀察到如爲8x1018以下，輸出乃成爲5 以上者。 然而，針對在上述實施例1及實驗例1，載體濃度係 經由CV測定及SIMS測定而測定。Vf係以公知的電性特 性測定機，測定20mA通電時之順方向電壓。Vf ( total) 係以公知的電性特性測定機，在形成η型GaP窗層之狀 態，測定20mA通電時之順方向電壓。使用壽命係將通電 (通電電流20mA )之後的輸出（初期値）與1 00小時經 -14- 200924241 過後之輸出的變化率，進行測定（測定電流2 0m A )。輸 出係以公知的電性特性測定機，測定20rnA通電時之積分 球光輸出（單位mW)。 【圖式簡單說明】 圖1乃模式性顯示本發明之高亮度發光二極體之製造 方法的第1形態之工程順序一例說明圖。 圖2乃圖1之工程順序的流程圖。 圖3乃顯示本發明之高亮度發光二極體之構造的1例 模式性說明圖。 圖4乃模式性顯示本發明之高亮度發光二極體之製造 方法的第2形態之工程順序一例說明圖。 圖5乃圖4之工程順序的流程圖。 圖6乃顯示針對在實施例1及比較例1之η型窗層的 載體濃度分布圖表。 圖7乃顯示針對在實驗例1之η層界面之載體濃度與 △ Vf之關係圖表。 圖8乃顯示針對在實驗例1之Vf ( total ) - Vf ( p ) 與Δνί·之關係圖表。 圖9乃顯示針對在實驗例1之η層界面之載體濃度與 使用壽命之關係圖表。 圖10乃顯示針對在實驗例1之η型GaP窗層成長初 期以後之η型GaP窗層的載體濃度與輸出之關係圖表。 -15- 200924241 【主要元件符號說明】 1 0 : GaAs 基板 12 : AlGalnP之4元發光層 14 : p型窗層 1 6、1 7 : η型窗層 16a :高載體濃度窗層 16b :低載體濃度窗層 -16Vf defective light emission 2 and productivity The board of the present invention is configured as a facet. 1 form, > GaAs base Fig. 1(a) 1 〇 is a 4-element reactor using a luminescent layer, p-type window layer 2). Its p , and 1 · 6 χ AlGaAs , are obtained. It is removed by etching with a chemical such as sulfuric acid*-9-200924241 hydrogen peroxide water (Fig. 1 (C) 3rd, step 2 of Fig. 2). Next, the n-type impurity such as Si, Te or S is doped by a vapor phase epitaxial growth (VPE) reactor to match the back surface of the GaAs of the 4 兀 light-emitting layer 12 of the AlGalnP. The n-type GaP window layer 16 used is grown as a vapor phase epitaxial growth (Fig. 1 (d) fourth project, step 2 of Fig. 2). In the first aspect of the method of the present invention, in the fourth aspect, the n-type carrier concentration in the initial stage of growth of the n-type GaP window layer in the vicinity of the back side interface of the 4-element light-emitting layer 1 of the AlGalnP is increased. For example, the n-type carrier concentration of the high carrier concentration window layer 16a at the initial stage of the growth of the n-type GaP window layer in the vicinity of the back side interface of the 4-element luminescent layer of the AlGalnP is 9xl017/cm3 or more and 2xl018/cm3 or less, ideally 1·1Χ1018/cm3 or more, and 1·5χ1018/cm3 or less is the best. Further, the thickness of the high carrier concentration window layer 16a may be 0.1 #m~ ideally, for example, about 1 m to 5 v m. Next, the n-type carrier concentration of the n-type GaP window layer after the initial stage of the growth of the n-type GaP window layer is lower than the n-type carrier concentration at the initial stage of growth of the n-type GaP window layer. For example, the n-type carrier concentration of the low carrier concentration window layer 16b after the initial growth of the n-type GaP window layer on the back side of the 4-element light-emitting layer of the AlGalnP is 3χ1017/cm3 or more, and 8χ1017/cm3 or less, ideally 3.5. χ 1017 / cm3 or more, and 6 χ 1017 / cm3 or less is the best. Further, the thickness of the low carrier concentration window layer 16b may be as large as 125 // m ± 30 / z m. The structure of the high-intensity light-emitting diode of the present invention is as shown in FIG. 1(d) and -10-200924241 FIG. 3 'passing through a 4-member light-emitting layer having AlGalnP and a 4-member light-emitting layer grown on the aforementioned AlGalnP The P-type window layer 'for the extraction of the luminescent light on the layer side and the n-type GaP window layer for the extraction of the luminescent light on the back surface of the GaAs of the 4-element luminescent layer of the AlGalnP. The concentration of the n-type carrier in the initial stage of the growth of the n-type GaP window layer is, for example, 9 χ 1017 /cm 3 or more, and 2 χ 1 〇ΐ 8 / cm 3 or less 'ideal system l.lxlO18 / cm 3 or more, and 1 · 5 χ 1 〇 18 / cm 3 or less 'Next', the n-type carrier concentration of the n-type GaP window layer after the initial stage of the growth of the n-type GaP window layer is lower than the n-type carrier concentration at the initial stage of the growth of the n-type GaP window layer, for example, as 3 x 1017 / cm 3 or more. When 8xl〇18 pieces/cm3 or less, ideally 3·5χ10ΐ7 pieces/cm3 or more, and 6xl〇17 pieces/cm3 or less, vf and ΔVf are low and high brightness, and brightness deterioration is small. Next, a second embodiment of the method for producing a high-intensity light-emitting diode of the present invention will be described with reference to Figs. 4 and 5 . Fig. 4 is an explanatory view showing an example of a process sequence of a second embodiment of the method for producing a high-intensity light-emitting diode of the present invention. Figure 5 is a flow chart of the engineering sequence of Figure 4. The first to third engineering of the second aspect of the method of the present invention performs the same construction as in the first aspect of the method of the present invention. That is, the 4-element light-emitting layer 12 of AlGalnP is grown on the GaAs substrate 10 by an organometallic vapor phase epitaxy (MOCVD) (Fig. 4 (a) first step, step 100 of Fig. 5). Next, on the surface of the 4-element light-emitting layer I2 of the AlGalnP, a p-type impurity layer for facuring light is grown by a V-phase epitaxial growth (VPE) reactor, doped with a P-type impurity such as Zn. 11 - 200924241 (Fig. 4(b), second project, step 5, step 102). After the end of the above-mentioned first step, the GaAs substrate 1 〇 ' is etched away by a chemical such as sulfuric acid/peroxidation (Fig. 4 (c) third project, Fig. 5 step 104). Next, the n-type impurity of Si, Te or S, etc. The GaP window layer 17 is grown as a vapor phase epitaxial growth (Fig. 4(d) project, step 106A of Fig. 5). The second aspect of the method of the present invention is characterized in that the substrate 12 is formed on the surface of the 4-element luminescent layer 12 of the AlGalnP in which the p-type window layer 14 for extracting luminescent light is extracted in the second process. Vf, in the case of Vf (p), the GaAs substrate 12 is removed in the third step, and then in the fourth step, the phase epitaxial growth luminescence is performed on the back surface of the GaAs of the 4-element light-emitting layer of the AlGalnP. Vf of the n-type GaP window layer 17 for light extraction, as Vf ( total ) Vf ( n ) = Vf ( total ) (P ), is controlled to be O.lVSVf(n) S0.25V. When the concentration of the n-type carrier of the type 17 is high, a high-brightness light-emitting diode having a low (vf), high brightness, and low brightness is produced. A high-luminance light-emitting diode of the present invention described above was cut to form a sheet, and when a red lamp was formed by adding an electrode to the wafer, a red lamp was obtained. The second embodiment of the present invention is directed to the use of the fourth embodiment of the present invention, in which the first GaAs process is used, and the Vf is in the gaseous state, and the crystal is highlighted by -12-200924241. Although the description of the embodiments shown in the drawings is of course 'of course' is not limited thereto. (Example 1 and Comparative Example 1) As shown in Figs. 1 and 2, a GaAs substrate having a thickness of 2 80 /zm was prepared on a GaAs substrate and grown to a thickness of 8/zm by an organometallic vapor phase growth method (MOCVD). A 4-element luminescent layer of AlGalnP. Then, on the surface of the 4-membered light-emitting layer of AlGalnP, a p-type GaP window layer for extraction of 150 Å of luminescent light was grown by a VPE reactor by doping with Zn. After the P-type GaP window layer is grown, the GaAs substrate is etched and removed by sulfuric acid/hydrogen peroxide water. Then, the back surface of GaAs which is lattice-matched to the 4-element light-emitting layer of AlGalnP is doped with a VPE reactor, and the p-type GaP window layer for luminescent light extraction is grown as a vapor phase epitaxial growth. The n-type carrier concentration of the high carrier concentration window layer at the initial stage of the growth of the n-type GaP window layer in the vicinity of the back side interface of the 4-membered light-emitting layer of the AlGalnP is 1.0×10 18 /cm 3 , and the high carrier concentration window layer The thickness is taken as 1 # m. On the other hand, the n-type carrier concentration of the low carrier concentration window layer after the initial stage of the growth of the n-type GaP window layer on the back side of the 4-element light-emitting layer of the AlGalnP is 6.Ox10 17 / cm 3 , and the low carrier concentration The thickness of the window layer is taken as 125#m. The carrier concentration distribution of the 11-type window layer of Example 1 was compared with that of Comparative Example 1 (the carrier concentration of the n-type window layer was 10 18 / cm 3 , and the other steps were the same as in Example 1 - 13) - 200924241 Luminous one pole) is not as shown in Figure 6. [Experimental Example 1] A light-emitting diode was produced in the same manner as in Example 1 to confirm the performance. First, the relationship between the carrier concentration of the η layer interface and ^vf was investigated, and the correlation between the two was shown in Fig. 7 as a graph. From the graph of Fig. 7, it was observed that the carrier concentration of the η layer interface was 9 x 1 017 / cm 3 or more, and Δ Vf was 200 mV or less. In addition, the relationship between Vf ( total ) - Vf ( p ) and AVf is investigated, and the correlation between the two is shown in Fig. 8 as a graph. From the graph of Fig. 8, it is observed that if it is 0.1 VSVf(n)S 0.25 乂, eight ¥ [is 20 〇 111 ¥ or less. More specifically, the relationship between the carrier concentration and the service life of the 11-layer interface was investigated, and the correlation between the two was shown in Fig. 9. From the graph of Fig. 9, it is observed that the service life is 94.5 % or more as in the case of 2xl018 or less. Further, the relationship between the carrier concentration and the output of the n-type GaP window layer after the initial stage of growth of the n-type GaP window layer was examined, and the correlation between the two was shown in Fig. 1 as a graph. From the graph of Fig. 10, it is observed that if the output is 8x1018 or less, the output is 5 or more. However, in the above Example 1 and Experimental Example 1, the carrier concentration was measured by CV measurement and SIMS measurement. The Vf was measured by a known electrical characteristic measuring machine, and the forward voltage at the time of energization of 20 mA was measured. Vf (total) is a state in which an n-type GaP window layer is formed by a known electrical property measuring device, and a forward voltage of 20 mA is measured. The service life is measured by the output (initial 値) after power-on (current supply current 20 mA) and the change rate of output after 100-hours -14-200924241 (measurement current 2 0 m A ). The output was measured by a known electrical property measuring machine, and the integrated spherical light output (unit: mW) at 20 rnA was measured. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view showing an example of a construction procedure of a first embodiment of a method for manufacturing a high-intensity light-emitting diode of the present invention. Figure 2 is a flow chart of the engineering sequence of Figure 1. Fig. 3 is a schematic explanatory view showing an example of the structure of the high-intensity light-emitting diode of the present invention. Fig. 4 is an explanatory view showing an example of the construction procedure of the second embodiment of the method for manufacturing the high-brightness light-emitting diode of the present invention. Figure 5 is a flow chart of the engineering sequence of Figure 4. Fig. 6 is a graph showing the carrier concentration distribution for the n-type window layers of Example 1 and Comparative Example 1. Fig. 7 is a graph showing the relationship between the carrier concentration and Δ Vf for the η layer interface of Experimental Example 1. Fig. 8 is a graph showing the relationship between Vf ( total ) - Vf ( p ) and Δνί· in Experimental Example 1. Fig. 9 is a graph showing the relationship between the carrier concentration and the service life for the n-layer interface in Experimental Example 1. Fig. 10 is a graph showing the relationship between the carrier concentration and the output of the n-type GaP window layer after the initial growth of the n-type GaP window layer in Experimental Example 1. -15- 200924241 [Description of main component symbols] 1 0 : GaAs substrate 12: 4-element luminescent layer 14 of AlGalnP: p-type window layer 166, VII: η-type window layer 16a: high carrier concentration window layer 16b: low carrier Concentration window layer-16

Claims (1)

200924241 十、申請專利範圍 1. 一種高亮度發光二極體，其特徵乃具有成長於 GaAs基板上之 AlGalnP之4元發光層，和成長於前述 AlGalnP之4元發光層之表面上的發光光之取出用的p型 窗層，和在蝕刻除去前述GaAs基板之後，氣相磊晶成長 於晶格匹配於前述AlGalnP之4元發光層之GaAs的背面 的發光光之取出用的η型GaP窗層，由持續提昇前述η 型GaP窗層之成長初期的η型載體濃度，將η型GaP窗 層成長初期之後之η型GaP窗層的η型載體濃度，作爲 較前述η型GaP窗層成長初期之η型載體濃度爲低者。 2. 如申請專利範圍第1項記載之高亮度發光二極體， 其中，前述AlGalnP之4元發光層之背面側界面附近之η 型GaP窗層成長初期的η型載體濃度乃9χ1017個/cm3以 上，且2xl018個/ cm3以下。 3. 如申請專利範圍第1項或第2項記載之高亮度發光 二極體，其中，前述AlGalnP之4元發光層之背面側之η 型GaP窗層成長初期之後的η型GaP窗層之η型載體濃 度乃3χ1017個/cm3以上，且8χ1017個/cm3以下。 4. 一種高亮度發光二極體之製造方法，屬於製造如申 請專利範圍第1項的高亮度發光二極體之方法，其特徵乃 包含經由有機金屬氣相成長法（MOCVD )，於GaAs基板 上成長 AlGalnP之4元發光層的第1工程，和於前述 AlGalnP之4元發光層之表面上，成長發光光之取出用的 P型窗層的第2工程，和在前述第2工程結束後，以蝕刻 -17- 200924241 除去前述GaAs基板之第3工程’和於晶格匹配於前述 AlGalnP之4元發光層之GaAs的背面’氣相磊晶成長發 光光之取出用的η型GaP窗層之第4工程；針對在前述 第4工程，呈作爲持續提昇前述AlGalnP之4元發光層之 背面側界面附近之η型GaP窗層成長初期的n型載體濃 度，將η型GaP窗層成長初期以後之η型GaP窗層的η 型載體濃度，作爲較前述η型GaP窗層成長初期之η型 載體濃度爲低者。 5. 如申請專利範圍第4項記載之高亮度發光二極體之 製造方法，其中，前述AlGalnP之4元發光層之背面側界 面附近之η型GaP窗層成長初期的η型載體濃度乃9x 1〇17個/ cm3以上，且2χ1018個/ cm3以下者。 6. 如申請專利範圍第4項或第5項記載之高亮度發光 二極體之製造方法，其中’前述AlGaInP之4元發光層之 背面側之η型GaP窗層成長初期之後的n型GaP窗層之n 型載體濃度乃3χ1017個/cm3以上，且8xl〇17個/cm3以 下者。 7. —種高亮度發光二極體之製造方法’其特徵乃包含 經由有機金屬氣相成長法（MOCVD)，於GaAs基板上成 長AlGalnP之4元發光層的第1工程’和於前述A1GaInP 之4元發光層之表面上’成長發光光之取出用的P型窗層 的第2工程，和在前述第2工程結束後’以蝕刻除去前述 GaAs基板之第3工程，和於晶格匹配於前述AlGalnP之 4元發光層之GaAs的背面，氣相聶晶成長GaP發光光之 -18- 200924241 取出用的η型窗層之第4工程；針對在前述第2工程，將 在成長發光光之取出用的ρ型窗層於前述AlGalnP之4元 發光層之表面上之後的前述GaAs基板之Vf，作爲Vf(p )之情況，針對在前述第3工程，除去前述GaAs基板， 接著針對在前述第4工程，於晶格匹配於前述AlGalnP之 4元發光層之GaAs的背面’將以氣相磊晶成長發光光之 取出用的η型GaP窗層之狀態的vf ’作爲vf ( total )情 況之 Vf(n) = Vf(total) — Vf(p) ’ 呈成爲 O.IVSVf (n) S0.25V地控制η型窗層之11型載體濃度者。 -19-200924241 X. Patent Application Range 1. A high-brightness light-emitting diode characterized by having a 4-element light-emitting layer of AlGalnP grown on a GaAs substrate, and a light-emitting light grown on the surface of the 4-element light-emitting layer of the aforementioned AlGalnP After extracting the p-type window layer and after etching and removing the GaAs substrate, the vapor phase epitaxy is grown on the n-type GaP window layer for extracting the light-emitting light lattice-matched to the back surface of the GaAs of the 4-element light-emitting layer of the AlGalnP The η-type carrier concentration of the n-type GaP window layer after the initial stage of the growth of the n-type GaP window layer is increased as the η-type GaP window layer is initially increased. The concentration of the n-type carrier is low. 2. The high-intensity light-emitting diode according to the first aspect of the invention, wherein the n-type carrier concentration of the n-type GaP window layer in the vicinity of the back side interface of the 4-member light-emitting layer of the AlGalnP is 9χ1017/cm3 Above, and 2xl018 / cm3 or less. 3. The high-intensity light-emitting diode according to the first or second aspect of the invention, wherein the n-type GaP window layer after the initial growth of the n-type GaP window layer on the back side of the 4-element light-emitting layer of the AlGalnP The concentration of the n-type carrier is 3χ1017/cm3 or more, and 8χ1017/cm3 or less. A method for manufacturing a high-brightness light-emitting diode, which is a method for manufacturing a high-brightness light-emitting diode according to the first aspect of the patent application, characterized in that it comprises a metal oxide vapor phase growth method (MOCVD) on a GaAs substrate. The first project of growing the 4-element light-emitting layer of AlGalnP, and the second process of growing the P-type window layer for illuminating light on the surface of the 4-element luminescent layer of AlGalnP, and after the completion of the second project The etched -17-200924241 removes the third process of the GaAs substrate and the n-type GaP window layer for the extraction of the back surface of the GaAs which is lattice-matched to the 4-element luminescent layer of the AlGalnP In the fourth project, the n-type carrier concentration at the initial stage of the growth of the n-type GaP window layer in the vicinity of the back side interface of the four-element light-emitting layer that continuously raises the AlGalnP is increased, and the n-type GaP window layer is initially grown. The n-type carrier concentration of the subsequent n-type GaP window layer is lower than the n-type carrier concentration at the initial stage of growth of the n-type GaP window layer. 5. The method for producing a high-intensity light-emitting diode according to the fourth aspect of the invention, wherein the n-type carrier concentration in the initial stage of growth of the n-type GaP window layer in the vicinity of the back side interface of the 4-element light-emitting layer of the AlGalnP is 9x. 1〇17/cm3 or more, and 2χ1018/cm3 or less. 6. The method for producing a high-brightness light-emitting diode according to the fourth or fifth aspect of the invention, wherein the n-type GaP after the initial growth of the n-type GaP window layer on the back side of the 4-element light-emitting layer of the AlGaInP The n-type carrier concentration of the window layer is 3χ1017/cm3 or more, and 8×l〇17/cm3 or less. 7. A method for producing a high-brightness light-emitting diode, characterized by comprising a first project of growing a 4-element light-emitting layer of AlGalnP on a GaAs substrate via an organometallic vapor phase epitaxy (MOCVD) method and the aforementioned A1GaInP On the surface of the four-element light-emitting layer, the second project of the P-type window layer for the extraction of the emitted light, and the third process of removing the GaAs substrate by etching after the completion of the second process, and the lattice matching The fourth surface of the GaAs back surface for the 4-element light-emitting layer of the AlGalnP, the fourth phase of the η-type window layer for the extraction of the gas-emitting layer of the gamma-emitting light -18-200924241, and the growth of the illuminating light for the second project The Vf of the GaAs substrate after the extraction of the p-type window layer on the surface of the 4-element light-emitting layer of the AlGalnP is used as the Vf(p), and the GaAs substrate is removed in the third process, and then In the fourth project, the vf ' in the state of the n-type GaP window layer for the extraction of the light-emitting light by the vapor phase epitaxial growth of the GaAs rear surface of the four-element light-emitting layer of the AlGalnP is taken as the vf (total) case. Vf(n) = Vf(total) — Vf(p) It was becomes O.IVSVf (n) S0.25V type 11 controlled by the carrier concentration of the η-type window layer. -19-
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