WO2009017155A1 - High-luminance light-emitting diode and manufacturing method thereof - Google Patents

High-luminance light-emitting diode and manufacturing method thereof Download PDF

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Publication number
WO2009017155A1
WO2009017155A1 PCT/JP2008/063665 JP2008063665W WO2009017155A1 WO 2009017155 A1 WO2009017155 A1 WO 2009017155A1 JP 2008063665 W JP2008063665 W JP 2008063665W WO 2009017155 A1 WO2009017155 A1 WO 2009017155A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting diode
window layer
type
luminance light
light
Prior art date
Application number
PCT/JP2008/063665
Other languages
French (fr)
Japanese (ja)
Inventor
Masataka Watanabe
Masato Yamada
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Publication of WO2009017155A1 publication Critical patent/WO2009017155A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

A red-color high-luminance light-emitting diode that eliminates defects caused by high Vf while exhibiting excellent life performance and high luminance, as well as a manufacturing method for the high-luminance light-emitting diode that assures stable manufacturing of the high-luminance light-emitting diode with improved yield and productivity. The high-luminance light-emitting diode has an AlGaInP 4-element luminescent layer that is made grown on a GaAs substrate, a p-type window layer for taking out luminescent light that is made grown on the top surface of the AlGaInP 4-element luminescent layer, and an n-type GaP window layer for taking out luminescent light that is made grown in a vapor phase epitaxial method on the rear side that is lattice-matched to GaAs on the AlGaInP 4-element luminescent layer after etching removal of the GaAs substrate. The n-type carrier density in early phase of growth of the n-type GaP window layer is increased, and then the n-type carrier density of the n-type GaP window layer after early phase of growth of the n-type GaP window layer is made lower than the n-type carrier density in early phase of growth of the n-type GaP window layer.
PCT/JP2008/063665 2007-07-31 2008-07-30 High-luminance light-emitting diode and manufacturing method thereof WO2009017155A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-199618 2007-07-31
JP2007199618A JP5324761B2 (en) 2007-07-31 2007-07-31 High brightness light emitting diode and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2009017155A1 true WO2009017155A1 (en) 2009-02-05

Family

ID=40304385

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063665 WO2009017155A1 (en) 2007-07-31 2008-07-30 High-luminance light-emitting diode and manufacturing method thereof

Country Status (3)

Country Link
JP (1) JP5324761B2 (en)
TW (1) TWI404231B (en)
WO (1) WO2009017155A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011034080A1 (en) * 2009-09-15 2011-03-24 昭和電工株式会社 Light emitting diode, light emitting diode lamp and lighting device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817724B (en) * 2022-09-19 2023-10-01 錼創顯示科技股份有限公司 Micro light-emitting component

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068731A (en) * 1999-08-30 2001-03-16 Showa Denko Kk AlGaInP LIGHT EMITTING DIODE
JP2004304090A (en) * 2003-04-01 2004-10-28 Hitachi Cable Ltd Light emitting diode
JP2006261266A (en) * 2005-03-16 2006-09-28 Sharp Corp Semiconductor light emitting device and its manufacturing method, and electronic equipment
JP2007059756A (en) * 2005-08-26 2007-03-08 Rohm Co Ltd Semiconductor light emitting device
JP2007165612A (en) * 2005-12-14 2007-06-28 Showa Denko Kk Gallium-nitride compound semiconductor light-emitting element and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3666444B2 (en) * 1992-10-15 2005-06-29 セイコーエプソン株式会社 Surface emitting semiconductor laser and manufacturing method thereof
JP3552642B2 (en) * 2000-04-13 2004-08-11 日本電気株式会社 Semiconductor light emitting device and method of manufacturing the same
JP4569859B2 (en) * 2003-11-19 2010-10-27 信越半導体株式会社 Method for manufacturing light emitting device
JP2005276900A (en) * 2004-03-23 2005-10-06 Shin Etsu Handotai Co Ltd Light-emitting element
JP2005277218A (en) * 2004-03-25 2005-10-06 Shin Etsu Handotai Co Ltd Light-emitting element and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068731A (en) * 1999-08-30 2001-03-16 Showa Denko Kk AlGaInP LIGHT EMITTING DIODE
JP2004304090A (en) * 2003-04-01 2004-10-28 Hitachi Cable Ltd Light emitting diode
JP2006261266A (en) * 2005-03-16 2006-09-28 Sharp Corp Semiconductor light emitting device and its manufacturing method, and electronic equipment
JP2007059756A (en) * 2005-08-26 2007-03-08 Rohm Co Ltd Semiconductor light emitting device
JP2007165612A (en) * 2005-12-14 2007-06-28 Showa Denko Kk Gallium-nitride compound semiconductor light-emitting element and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011034080A1 (en) * 2009-09-15 2011-03-24 昭和電工株式会社 Light emitting diode, light emitting diode lamp and lighting device
US8659004B2 (en) 2009-09-15 2014-02-25 Showa Denko K.K. Light emitting diode, light emitting diode lamp, and illuminating apparatus
US9112084B2 (en) 2009-09-15 2015-08-18 Showa Denko K.K. Light emitting diode, light emitting diode lamp, and illuminating apparatus

Also Published As

Publication number Publication date
JP2009038132A (en) 2009-02-19
JP5324761B2 (en) 2013-10-23
TW200924241A (en) 2009-06-01
TWI404231B (en) 2013-08-01

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