CN105428479A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting element Download PDFInfo
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- CN105428479A CN105428479A CN201511012848.7A CN201511012848A CN105428479A CN 105428479 A CN105428479 A CN 105428479A CN 201511012848 A CN201511012848 A CN 201511012848A CN 105428479 A CN105428479 A CN 105428479A
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- quantum well
- well layer
- semiconductor light
- doped gan
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000002131 composite material Substances 0.000 claims abstract description 36
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 44
- 238000010276 construction Methods 0.000 claims description 34
- 230000005012 migration Effects 0.000 claims description 16
- 238000013508 migration Methods 0.000 claims description 16
- 239000000428 dust Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000005215 recombination Methods 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 230
- 230000000694 effects Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a semiconductor light emitting element. The semiconductor light emitting element comprises a substrate, and a nitride buffer layer, an n-type layer, a shallow quantum well layer, a multiple quantum well layer and a p-type layer formed on the substrate sequentially. The semiconductor light emitting element is characterized in that a composite structure layer is also inserted between the shallow quantum well layer and the multiple quantum well layer; the composite structure layer at least comprises a p-type doped GaN layer, an n-type doped GaN layer, and an isolation layer located between the p-type doped GaN layer and the n-type doped GaN layer. The feature that p-type impurities in the composite structure layer are migrated to the shallow quantum well layer and the multiple quantum well layer is used, light emitting of the shallow quantum well layer and the composite structure layer is promoted while the light-emitting strength of the multiple quantum well layer is enhanced, the light outgoing area of the semiconductor element is increased, and the light-emitting strength is further enhanced.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of semiconductor element with composite construction layer.
Background technology
Light-emitting diode (Light-emittingdiodes, be called for short LED) with advantages such as its high efficiency, long-life, all solid state, self-luminous and environmental protections, illumination and display two large fields are widely used in, the exploitation in especially current white-light illuminating field, makes the demand of market to LED and chip suddenly increase.
At present, in light emitting diode construction, because the activation efficiency of p-type impurity is lower, make the concentration in activation hole in p-type layer well below electron concentration in n-layer, and due to the mobility in hole less, be 480cm
2/ Vs(is only 1/3 ~ 1/2 of electron mobility), so, cause activation hole mainly to concentrate in the quantum well near P-type layer, and the migration rate (1350cm of electronics
2/ Vs) far away higher than hole, thus in the quantum well causing luminescent layer mainly to concentrate near P-type layer, cause luminous efficiency low, uniformity of luminance is poor, therefore when this light emitting diode construction is applied to patch products, its lateral emitting is also on the low side, is difficult to the needs meeting practical application.
Summary of the invention
For the asymmetrically distributed problem in electronics in traditional quantum well designs and hole, the present invention proposes a kind of semiconductor light-emitting elements with composite construction, improves combined efficiency and the lighting area in electronics and hole.
Semiconductor light-emitting elements provided by the invention, comprise a substrate, and the nitride buffer layer, n-layer, shallow quantum well layer, multiple quantum well layer and the p-type layer that are formed at successively on described substrate, it is characterized in that: between described shallow quantum well layer and described multiple quantum well layer, insert a composite construction layer, described composite construction layer at least comprises a p-type doped gan layer, a N-shaped doped gan layer and the separator between described p-type doped gan layer and N-shaped doped gan layer.
Preferably, when injecting electricity, described shallow quantum well layer, composite construction layer and multiple quantum well layer are luminous.
Preferably, the material of described separator is Al
xin
yga
1-x-yn, wherein, 0.1≤x≤0.2,0.1≤y≤0.35.
Preferably, adjust the concentration of component of Al and In in described separator, make described shallow quantum well layer, composite construction layer consistent with multiple quantum well layer emission wavelength range.
Preferably, the p-type impurity in described p-type doped layer, respectively to described multiple quantum well layer and the migration of shallow quantum well layer, promotes electronics and hole-recombination in described shallow quantum well layer and multiple quantum well layer.
Preferably, the energy gap of described separator is greater than the energy gap of described p-type doped gan layer and N-shaped doped gan layer.
Preferably, described composite construction layer also comprises the first electronic barrier layer closing on described shallow quantum well layer, the second electronic barrier layer closing on described multiple quantum well layer.
Preferably, described first electronic barrier layer, the second electronic barrier layer are for controlling the migration amount to described multiple quantum well layer and shallow quantum well layer of p-type impurity in described p-type doped gan layer.
Preferably, the speed that described first electronic barrier layer, the second electronic barrier layer move to described multiple quantum well layer for the electronics limiting described n-layer, improves effective compound probability in electronics and hole.
Preferably, described first electronic barrier layer and the second electronic barrier layer are AlGaN material layer.
Preferably, the thickness of described first electronic barrier layer and the second electronic barrier layer is 400 dust ~ 600 dusts
Preferably, the thickness of described N-shaped doped gan layer is 800 dust ~ 950 dusts.
Preferably, the thickness of described p-type doped gan layer is 800 dust ~ 950 dusts.
Preferably, in described p-type doped gan layer, p-type impurity concentration is 0.8 × 10
18/ cm
3~ 1.2 × 10
19/ cm
3.
Preferably, in described N-shaped doped gan layer, N-shaped impurity concentration is 0.8 × 10
17/ cm
3~ 1.2 × 10
18/ cm
3.
The present invention at least has following beneficial effect:
1) p-type doped gan layer inner p-type impurity moves to both sides, improve the phenomenon that in prior art, hole more slowly and mainly concentrates in the part Multiple Quantum Well of p-type layer because of migration rate, make shallow quantum well layer, electron collection layer all has hole to inject, realize shallow quantum well layer and multiple quantum well layer all has electronics and hole to carry out recombination radiation luminescence, and then increase LED lighting area.
2) the two-terminal electronic barrier layer in composite construction layer, slows down the migration rate of n-layer electronics, strengthens the ability of shallow quantum well layer, electron collection layer enrichment electronics; Increase hole in p-type layer, to away from p-type layer end quantum well migration concentration, to improve the luminous efficiency of multiple quantum well layer, increase luminous intensity.Meanwhile, the concentration of balanced p-type migration impurity to shallow quantum well layer and multiple quantum well layer is also played on two-terminal electronic barrier layer, avoids destruction lattice quality.
3) between shallow quantum well layer and multiple quantum well layer, insert composite construction layer, effectively reduce the overflow of electronics outside under electric field bias, improve the Droop effect of big current product, and improve the ESD tolerance of semiconductor element.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
The semiconductor component structure schematic diagram of Fig. 1 embodiment of the present invention one;
The semiconductor component structure schematic diagram of Fig. 2 embodiment of the present invention two;
The semiconductor element band structure schematic diagram of Fig. 3 embodiment of the present invention two;
The composite construction layer schematic diagram of Fig. 4 embodiment of the present invention three;
Accompanying drawing marks: 10: substrate; 20: nitride buffer layer; 30:n type layer; 40: shallow quantum well layer; 41: well layer; 50: composite construction layer; 50 ': periodic structure; 51: the first electronic barrier layers; 51 ': the second electronic barrier layer; 52:n type doped gan layer; 53: separator; 54:p type doped gan layer; 60: multiple quantum well layer; 61: electron collection layer; 611: barrier layer; 612: well layer; 62: luminescent layer; 621: barrier layer; 622: well layer; 70:p type layer.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in detail.
embodiment 1
Referring to accompanying drawing 1, a kind of semiconductor element with composite construction layer 50, comprise a substrate 10, and the nitride buffer layer 20 be formed at successively on substrate 10, n-layer 30, shallow quantum well layer 40, multiple quantum well layer 60 and p-type layer 70, and the composite construction layer 50 between shallow quantum well layer 40 and multiple quantum well layer 60, wherein, substrate 10 is sapphire plain film substrate, patterned sapphire substrate, silicon nitrate substrate, GaN substrate, silicon substrate, any one in glass substrate or metal substrate, nitride buffer layer 20 is single layer structure or superlattice structure, it is by Ga, N, In, the binary of Al composition, ternary or quad arrangement, p-type layer 70 is the GaN layer of doped with Mg.
Continue referring to accompanying drawing 1, in the present embodiment, composite construction layer 50 at least comprises p-type doped gan layer 54, N-shaped doped gan layer 52 and the separator between p-type doped gan layer 54 and N-shaped doped gan layer 52 53.Wherein, the material of separator 53 is Al
xin
yga
1-x-yn, preferably 0.1≤x≤0.2,0.1≤y≤0.35, the concentration of component of Al and In in adjustment separator 53, make shallow quantum well layer 40, composite construction layer 50, multiple quantum well layer 60 emission wavelength range consistent, therefore, when injecting electricity to semiconductor element, shallow quantum well layer, composite construction layer and multiple quantum well layer are all luminous.
Particularly, further adjustment Al, In concentration of component, the energy gap of separator 53 is made to be greater than p-type doped gan layer 54 and N-shaped doped gan layer 52 energy gap, and making shallow quantum well layer 40 identical with the emission wavelength of multiple quantum well layer 60 with the emission wavelength of separator 53, the phenomenon avoiding light-emitting component medium wavelength inconsistent produces.Structure of the present invention makes shallow quantum well layer 40, composite construction layer 50, multiple quantum well layer 60 all can be effectively luminous, increases semiconductor element lighting area.The thickness of the present embodiment preferred p-type doped gan layer 54 is 800 dust ~ 950 dusts, and its impurity is II race's element, comprises Mg, Zn, and its impurity concentration is 0.8 × 10
18/ cm
3~ 1.2 × 10
19/ cm
3the characteristic utilizing p-type impurity to have the shallow quantum well layer 40 to composite construction layer 50 both sides to move with multiple quantum well layer 60, improve the phenomenon that in prior art, hole more slowly and mainly concentrates in the part multiple quantum well layer 60 of p-type layer 70 because of migration rate, make shallow quantum well layer 40, multiple quantum well layer 60 all have hole to inject from bottom to up, realize the effectively recombination radiation luminescence in shallow quantum well layer 40 with multiple quantum well layer 60 of electronics and hole; The thickness of N-shaped doped gan layer 52 is 800 dust ~ 950 dusts, and its impurity is IV race's element, comprises Si, Ge, Sn, and its impurity concentration is 0.8 × 10
17/ cm
3~ 1.2 × 10
18/ cm
3, it is on the one hand for composite construction layer 50 luminescence provides electronics, and on the other hand as transition zone, the destruction that the shallow quantum well layer 40In of the InGaN/GaN grown under improving hot conditions adulterates to lattice, improves the ESD tolerance of semiconductor element.
embodiment 2
Referring to accompanying drawing 2, the present embodiment is compared with embodiment 1, difference is, composite construction layer 50 also comprises the second electronic barrier layer 51 ' closing on shallow quantum well layer 40 first electronic barrier layer 51 and close on multiple quantum well layer 60, wherein, the material of the first electronic barrier layer 51 and the second electronic barrier layer 51 ' is AlGaN, and its thickness is identical or different, the present embodiment preferred electron barrier layer 51 is identical with the thickness of the second electronic barrier layer 51 ', and preferred thickness range is 400 dust ~ 600 dusts.
Particularly, referring to accompanying drawing 3, composite construction layer 50 is followed successively by the first electronic barrier layer 51, N-shaped doped gan layer 52, Al from bottom to up
xin
yga
1-x-yn separator 53, p-type doped gan layer 54 and the second electronic barrier layer 51 '; Wherein, the energy gap of separator 53 is greater than p-type GaN layer 54 and n-type GaN layer 52, and is less than the energy gap of the first electronic barrier layer 51 and the second electronic barrier layer 51 '; Multiple quantum well layer 60 comprises electron collection layer 61 and luminescent layer 62.
In prior art, because the migration velocity of electronics is very fast, the present embodiment is avoid when the p-type impurity in p-type doped gan layer 54 does not migrate to shallow quantum well layer 40 with electron collection layer 61, and the electronics of n-layer 30 is had moved in electron collection layer 61, make shallow quantum well layer 40 and electron collection layer 61 can not carry out the phenomenon of effective electron-hole recombination radiation luminescence; Therefore, at composite construction layer 50 upper/lower terminal, the second electronic barrier layer 51 ' and the first electronic barrier layer 51 are set respectively, the speed that the electronics reducing described n-layer 30 on the one hand moves to described p-type layer 70, for the hole migration of p-type doped gan layer 54 provides the time, increase effective compound probability in electronics and hole in shallow quantum well layer 40 and electron collection layer 61; And also for hole in p-type layer 70 provides the time to away from migration in the Multiple Quantum Well of P-type layer, increase the luminous efficiency of Multiple Quantum Well.On the other hand for controlling the migration amount to electron collection layer 61 and shallow quantum well layer 40 of p-type impurity in described p-type doped gan layer 54, reduce crystal mass to prevent the p-type impurity of higher concentration; Simultaneously, because of the effect of the first electronic barrier layer 51 and the second electronic barrier layer 51 ' in composite construction layer 50, improve the ability extending transversely of electric current, improve the uniformity of current expansion, the overflow of effective minimizing electronics outside under electric field bias, improves the Droop effect of big current product simultaneously.
In addition, shallow quantum well layer 40 is by the In in 2 ~ 20 cycles
y1ga
1-y1n/GaN trap builds structure composition, and it mainly plays stress buffer effect, reduces the crystal lattice difference of multiple quantum well layer 60 and n-layer 30; Electron collection layer 61 is by the In in 2 ~ 30 cycles
y2ga
1-y2n/GaN trap builds structure composition, and luminescent layer 62 is by the In in 2 ~ 25 cycles
y3ga
1-y3n/GaN trap builds structure composition, wherein, and y
1< y
2, y
1< y
3, y
1< y, the energy gap of well layer 41 is greater than the energy gap of well layer in multiple quantum well layer 60 (612,622); Barrier layer 611 thickness of electronics collection layer 61 is identical with barrier layer 621 thickness of luminescent layer 62, the thickness of the well layer 612 of electron collection layer 61 is 0.5 ~ 0.9 times of luminescent layer 62 well layer thickness, electron collection layer 61 1 aspect plays the effect of Stress Release, another side is positioned at after composite construction layer 50, further collection electronics, slows down electron transfer rate;
Further, while regulating Al, In concentration of component to make the consistent wavelength of separator 53 and shallow quantum well layer 40, electron collection layer 61, luminescent layer 62, also comprise and regulate separator 53, the thickness of well layer (41,612,622) and the process of growth temperature, such as, in the present embodiment, because the In concentration of component of shallow quantum well layer 40 is lower than multiple quantum well layer 61 and luminescent layer 62, then regulate its wavelength preferably by the thickness increasing well layer 41, make it consistent with the emission wavelength of separator 53, electron collection layer 61, luminescent layer 62.
embodiment 3
Referring to accompanying drawing 4, the difference of the present embodiment and embodiment 1 is, composite construction layer 50 at least comprises p-type doped gan layer 54, N-shaped doped gan layer 52, material between p-type doped gan layer 54 and N-shaped doped gan layer 52 is Al
xin
yga
1-x-ythe separator 53 of N replaces the periodic structure 50 ' of composition and closes on shallow quantum well layer 40 first electronic barrier layer 51, close on the second electronic barrier layer 51 ' of multiple quantum well layer 60, wherein the periodicity of periodic structure 50 ' is more than or equal to 2, each cycle includes N-shaped doped gan layer 52, separator 53, p-type doped gan layer 54 and separator 53, first electronic barrier layer 51 and the second electronic barrier layer 51 ' are in enrichment composite construction layer 50 while electronics, control the migration amount to described multiple quantum well layer 60 and shallow quantum well layer 40 of p-type impurity in p-type doped gan layer 54, to prevent the p-type impurity of higher concentration, crystal mass is reduced, Al in adjustment separator 53, In concentration of component, make shallow quantum well layer 40 consistent with the emission wavelength of described multiple quantum well layer 60 with the emission wavelength of composite construction layer 50, increase semiconductor element lighting area, then its luminous intensity is promoted.
It should be noted that, in the present invention, direction upwards refers to the direction from substrate 10 to p-type layer 70, also refers to the direction from substrate 10 to p-type layer 70 from bottom to up; P-type impurity is used for providing hole, N-shaped impurity for providing electronics.
Above-described embodiment is exemplary illustration principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (14)
1. semiconductor light-emitting elements, comprise a substrate, and the nitride buffer layer, n-layer, shallow quantum well layer, multiple quantum well layer and the p-type layer that are formed at successively on described substrate, it is characterized in that: between described shallow quantum well layer and multiple quantum well layer, insert a composite construction layer, described composite construction layer at least comprises a p-type doped gan layer, a N-shaped doped gan layer and the separator between described p-type doped gan layer and N-shaped doped gan layer.
2. semiconductor light-emitting elements according to claim 1, is characterized in that: when injecting electricity, and described shallow quantum well layer, composite construction layer and multiple quantum well layer are luminous.
3. semiconductor light-emitting elements according to claim 1, is characterized in that: the material of described separator is Al
xin
yga
1-x-yn, 0.1≤x≤0.2,0.1≤y≤0.35.
4. semiconductor light-emitting elements according to claim 2, is characterized in that: the concentration of component adjusting Al and In in described separator, makes described shallow quantum well layer, composite construction layer, multiple quantum well layer emission wavelength range consistent.
5. semiconductor light-emitting elements according to claim 1, is characterized in that: the energy gap of described separator is greater than the energy gap of described p-type doped gan layer and N-shaped doped gan layer.
6. semiconductor light-emitting elements according to claim 1, is characterized in that: the p-type impurity in described p-type doped layer, respectively to described multiple quantum well layer and the migration of shallow quantum well layer, promotes electronics and hole-recombination in described shallow quantum well layer and multiple quantum well layer.
7. semiconductor light-emitting elements according to claim 1, is characterized in that: described composite construction layer also comprises the first electronic barrier layer closing on described shallow quantum well layer, the second electronic barrier layer closing on described multiple quantum well layer.
8. semiconductor light-emitting elements according to claim 7, is characterized in that: described first electronic barrier layer, the second electronic barrier layer are for controlling the migration amount to described multiple quantum well layer and shallow quantum well layer of p-type impurity in described p-type doped gan layer.
9. semiconductor light-emitting elements according to claim 7, it is characterized in that: described first electronic barrier layer, the second electronic barrier layer, for limiting the migration rate of electronics to described multiple quantum well layer of described n-layer, improve effective compound probability in electronics and hole.
10. semiconductor light-emitting elements according to claim 7, is characterized in that: described first electronic barrier layer and the second electronic barrier layer are AlGaN material layer.
11. semiconductor light-emitting elements according to claim 1, is characterized in that: the thickness of described N-shaped doped gan layer is 800 dust ~ 950 dusts.
12. semiconductor light-emitting elements according to claim 1, is characterized in that: the thickness of described p-type doped gan layer is 800 dust ~ 950 dusts.
13. semiconductor light-emitting elements according to claim 1, is characterized in that: in described p-type doped gan layer, and p-type impurity concentration is 0.8 × 10
18/ cm
3~ 1.2 × 10
19/ cm
3.
14. semiconductor light-emitting elements according to claim 1, is characterized in that: in described N-shaped doped gan layer, and N-shaped impurity concentration is 0.8 × 10
17/ cm
3~ 1.2 × 10
18/ cm
3.
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| CN107134515A (en) * | 2017-05-27 | 2017-09-05 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN108428773A (en) * | 2018-03-06 | 2018-08-21 | 澳洋集团有限公司 | LED component epitaxial structure and preparation method thereof |
| CN109768130A (en) * | 2018-12-28 | 2019-05-17 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
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| CN107134515A (en) * | 2017-05-27 | 2017-09-05 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN108428773A (en) * | 2018-03-06 | 2018-08-21 | 澳洋集团有限公司 | LED component epitaxial structure and preparation method thereof |
| CN109768130A (en) * | 2018-12-28 | 2019-05-17 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
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