WO2009008494A1 - 光電変換素子およびその製造方法 - Google Patents

光電変換素子およびその製造方法 Download PDF

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Publication number
WO2009008494A1
WO2009008494A1 PCT/JP2008/062545 JP2008062545W WO2009008494A1 WO 2009008494 A1 WO2009008494 A1 WO 2009008494A1 JP 2008062545 W JP2008062545 W JP 2008062545W WO 2009008494 A1 WO2009008494 A1 WO 2009008494A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion element
substrate
electrode
counter electrode
Prior art date
Application number
PCT/JP2008/062545
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English (en)
French (fr)
Inventor
Tetsuya Inoue
Takeshi Sugiyo
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Hitachi Zosen Corporation
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Filing date
Publication date
Application filed by Hitachi Zosen Corporation filed Critical Hitachi Zosen Corporation
Priority to EP08791075A priority Critical patent/EP2169759B1/en
Priority to US12/452,574 priority patent/US20100132786A1/en
Priority to CN200880024464.9A priority patent/CN101689689B/zh
Publication of WO2009008494A1 publication Critical patent/WO2009008494A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2022—Light-sensitive devices characterized by he counter electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H01M14/005—Photoelectrochemical storage cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

 本発明は、発電効率が高く、腐食の問題がなく、耐熱性の低い基板に適用可能な光電変換素子およびその製造方法を提供する。負極となる電極と、正極となる対極とが対向状に配置されてなる光電変換素子である。前記電極は、透明基板(1)の片面上に透明導電膜(2)を介して、光増感色素で染色された光触媒膜(8)を形成することで構成したものである。前記対極は、対極用基板(4)の片面上に、同面を覆う導電性接着剤層(7)を介して、同基板表面に対して実質上垂直に配向したブラシ状カーボンナノチューブ膜（５）を設けることで構成したものである。　
PCT/JP2008/062545 2007-07-12 2008-07-11 光電変換素子およびその製造方法 WO2009008494A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08791075A EP2169759B1 (en) 2007-07-12 2008-07-11 Photoelectric conversion element and method for manufacturing the same
US12/452,574 US20100132786A1 (en) 2007-07-12 2008-07-11 Photoelectric conversion element and method of producing the same
CN200880024464.9A CN101689689B (zh) 2007-07-12 2008-07-11 光电转换元件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007183329A JP5127330B2 (ja) 2007-07-12 2007-07-12 光電変換素子およびその製造方法
JP2007-183329 2007-07-12

Publications (1)

Publication Number Publication Date
WO2009008494A1 true WO2009008494A1 (ja) 2009-01-15

Family

ID=40228664

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062545 WO2009008494A1 (ja) 2007-07-12 2008-07-11 光電変換素子およびその製造方法

Country Status (7)

Country Link
US (1) US20100132786A1 (ja)
EP (1) EP2169759B1 (ja)
JP (1) JP5127330B2 (ja)
KR (1) KR20100031738A (ja)
CN (1) CN101689689B (ja)
TW (1) TWI442579B (ja)
WO (1) WO2009008494A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231224A (ja) * 2008-03-25 2009-10-08 Hitachi Zosen Corp 光電変換素子およびその製造方法

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Publication number Priority date Publication date Assignee Title
CN102015606B (zh) 2007-06-08 2015-02-04 满康德股份有限公司 IRE-1α抑制剂
KR101562060B1 (ko) 2009-04-06 2015-10-21 삼성전자주식회사 전기 에너지 발생 장치 및 그 제조 방법
JP2011142027A (ja) * 2010-01-08 2011-07-21 Hitachi Zosen Corp 色素増感太陽電池の製造方法
CN102859037A (zh) * 2010-04-22 2013-01-02 日立造船株式会社 在透明电极上形成光催化膜的方法
CN102859036A (zh) * 2010-04-22 2013-01-02 日立造船株式会社 在透明电极上形成光催化膜的方法
CN102315311A (zh) * 2010-07-06 2012-01-11 杜邦太阳能有限公司 太阳能模块装置及其封边涂布方法
EP2641273A1 (en) * 2010-11-18 2013-09-25 Robert Bosch (Sea) Pte. Ltd. A photovoltaic device and method for the production of a photovoltaic device
JPWO2013065557A1 (ja) * 2011-11-01 2015-04-02 三菱電機株式会社 薄膜太陽電池セルおよびその製造方法、集積型薄膜太陽電池
JP2013149504A (ja) * 2012-01-19 2013-08-01 Hyogo Prefecture 多孔質半導体上で重合した色素による高耐久信頼型色素増感型光電変換装置
KR102061922B1 (ko) 2012-02-23 2020-01-02 트레드스톤 테크놀로지스, 인크. 전기 전도성이고 내부식성인 금속 표면
GB2501871B8 (en) * 2012-05-03 2022-08-17 Dyson Technology Ltd Hybrid Capacitor
JP6021104B2 (ja) 2012-08-30 2016-11-02 日立造船株式会社 太陽電池の発電層およびその製造方法並びに太陽電池
JP6326815B2 (ja) * 2013-12-27 2018-05-23 日本ゼオン株式会社 太陽電池用電極基板
CN105023756B (zh) * 2015-05-27 2017-11-14 新余学院 一种用于染料敏化太阳电池的整体式纸炭对电极的制备方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231224A (ja) * 2008-03-25 2009-10-08 Hitachi Zosen Corp 光電変換素子およびその製造方法

Also Published As

Publication number Publication date
US20100132786A1 (en) 2010-06-03
EP2169759A4 (en) 2010-09-08
EP2169759A1 (en) 2010-03-31
CN101689689B (zh) 2014-04-02
JP2009021123A (ja) 2009-01-29
TWI442579B (zh) 2014-06-21
CN101689689A (zh) 2010-03-31
EP2169759B1 (en) 2012-10-17
TW200910610A (en) 2009-03-01
KR20100031738A (ko) 2010-03-24
JP5127330B2 (ja) 2013-01-23

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