KR100854712B1 - 탄소소재층을 포함하는 염료감응 태양전지용 상대전극 및이의 제조방법 - Google Patents
탄소소재층을 포함하는 염료감응 태양전지용 상대전극 및이의 제조방법 Download PDFInfo
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- KR100854712B1 KR100854712B1 KR1020060099903A KR20060099903A KR100854712B1 KR 100854712 B1 KR100854712 B1 KR 100854712B1 KR 1020060099903 A KR1020060099903 A KR 1020060099903A KR 20060099903 A KR20060099903 A KR 20060099903A KR 100854712 B1 KR100854712 B1 KR 100854712B1
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- counter electrode
- dye
- carbon material
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
Description
구 분 | 접착층 성분 | 탄소소재층 성분 |
실시예 1 | 페놀 수지 | 카본블랙(carbon black) |
실시예 2 | 에폭시 수지 | 카본블랙(carbon black) |
실시예 3 | 에틸렌비닐아세테이트 | 카본블랙(carbon black) |
실시예 4 | 페놀 수지 | 활성탄(activated carbon) |
실시예 5 | 페놀 수지 | 흑연(graphite) |
구 분 | 탄소소재층 | 접착층 | 충진계수(%) | 변환효율(%) |
실시예 1 | 카본블랙 | 페놀 수지 | 60.40 | 4.15 |
비교예 1 | 백금(Pt) | - | 63.30 | 4.30 |
구 분 | 탄소소재층 | 접착층 | 충진계수(%) | 변환효율(%) |
실시예 1 | 카본블랙 | 페놀 수지 | 61.90 | 4.74 |
실시예 2 | 카본블랙 | 에폭시 수지 | 63.80 | 4.62 |
실시예 3 | 카본블랙 | 에틸렌비닐아세테이트 | 58.80 | 4.18 |
구 분 | 탄소소재층 | 접착층 | 충진계수(%) | 변환효율(%) |
실시예 1 | 카본블랙 | 페놀 수지 | 58.40 | 3.65 |
실시예 4 | 활성탄 | 페놀 수지 | 67.30 | 3.76 |
실시예 5 | 흑 연 | 페놀 수지 | 43.10 | 2.50 |
Claims (14)
- 염료감응 태양전지용 상대전극(counter electrode)에 있어서,상기 상대전극은 전도성 기판, 상기 기판에 형성된 접착층, 및 상기 접착층 위에 형성된 탄소소재층을 포함하고,상기 접착층은 페놀 수지, 에폭시 수지, 및 에틸렌비닐아세테이트 공중합수지로 이루어진 군에서 1종 이상 선택되는 고분자수지를 포함하는 것을 특징으로 하는 염료감응 태양전지용 상대전극.
- 삭제
- 제1항에 있어서,상기 탄소소재층은 카본블랙(carbon black), 활성탄(activated carbon), 및 흑연(graphite)으로 이루어진 군에서 1종 이상 선택되는 탄소소재를 포함하는 것인 염료감응 태양전지용 상대전극.
- 제1항에 있어서,상기 상대전극은 전도성 기판의 일면에 상기 접착층을 형성시킨 후, 상기 접착층 상에 탄소소재의 분말을 도포하고 가압하여 탄소소재층을 형성시킨 것인 염료 감응 태양전지용 상대전극.
- 염료감응 태양전지용 상대전극(counter electrode)의 제조방법에 있어서,상대전극용 전도성 기판을 준비하는 단계(제ⅰ단계);상기 상대전극용 기판의 일면에 접착층을 형성시키는 단계(제ⅱ단계); 및상기 접착층 상에 탄소소재층을 형성시키는 단계(제ⅲ단계)를 포함하고,상기 (제ⅲ단계)의 접착층은 페놀 수지, 에폭시 수지, 및 에틸렌비닐아세테이트 공중합수지로 이루어진 군에서 1종 이상 선택되는 고분자수지를 포함하는 것을 특징으로 하는 염료감응 태양전지용 상대전극의 제조방법.
- 삭제
- 제5항에 있어서,상기 (제ⅲ단계)의 탄소소재층은 카본블랙(carbon black), 활성탄(activated carbon), 및 흑연(graphite)으로 이루어진 군에서 1종 이상 선택되는 탄소소재를 포함하는 것인 염료감응 태양전지용 상대전극의 제조방법.
- 제5항에 있어서,상기 상대전극의 제조방법은 상기 (제ⅱ단계)와 (제ⅲ단계) 사이에상기 접착층이 형성된 기판을 가열하여 접착층이 유동성을 갖도록 하는 단계를 더욱 포함하는 것인 염료감응 태양전지용 상대전극의 제조방법.
- 제8항에 있어서,상기 접착층이 유동성을 갖도록 하는 단계는 접착층이 형성된 기판을 80 내지 150 ℃의 온도로 가열하는 것인 염료감응 태양전지용 상대전극의 제조방법.
- 제5항에 있어서,상기 (제ⅲ단계)는 상기 접착층에 탄소소재의 분말을 도포하고 가압 접착시켜 탄소소재층을 형성시키는 것인 염료감응 태양전지용 상대전극의 제조방법.
- 제5항에 있어서,상기 상대전극의 제조방법은 (제ⅲ단계) 이후에, 상기 상대전극의 접착층 성분이 탄소소재로 열분해될 수 있는 온도로 열처리하는 단계를 더욱 포함하는 것인 염료감응 태양전지용 상대전극의 제조방법.
- 제11항에 있어서,상기 상대전극을 열처리하는 단계는 접착층 및 탄소소재층이 형성된 기판을 300 내지 500 ℃에서 10 내지 60 분간 수행하는 것인 염료감응 태양전지용 상대전극의 제조방법.
- 광전극(photo electrode), 상기 광전극과 마주보도록 배치된 상대전극(counter electrode), 및 상기 두 전극 사이의 공간에 충진된 전해질을 포함하는 염료감응 태양전지에 있어서,상기 제1항, 및 제3항 내지 제4항 중 어느 한 항에 따른 상대전극, 또는 제5항, 및 제7항 내지 제12항 중 어느 한 항의 방법으로 제조된 상대전극을 포함하는 것을 특징으로 하는 염료감응 태양전지.
- 제13항에 있어서,상기 광전극은 전도성 기판의 일면에 감광성 염료로 염색된 금속산화물 나노입자층을 포함하는 것인 염료감응 태양전지.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020060099903A KR100854712B1 (ko) | 2006-10-13 | 2006-10-13 | 탄소소재층을 포함하는 염료감응 태양전지용 상대전극 및이의 제조방법 |
US11/674,776 US9090048B2 (en) | 2006-10-13 | 2007-02-14 | Counter electrode having carbon material layer for dye-sensitized photovoltaic cell and method of preparing the same |
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US8735017B2 (en) | 2010-03-10 | 2014-05-27 | Samsung Sdi Co., Ltd | Membrane-electrode assembly for fuel cell, method of manufacturing membrane-electrode assembly for fuel cell, and fuel cell system |
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JP5127330B2 (ja) * | 2007-07-12 | 2013-01-23 | 日立造船株式会社 | 光電変換素子およびその製造方法 |
JP5127329B2 (ja) * | 2007-07-12 | 2013-01-23 | 日立造船株式会社 | 光電変換素子およびその製造方法 |
TWI400811B (zh) * | 2009-01-16 | 2013-07-01 | Chipbond Technology Corp | 染料敏化太陽能電池之製造方法 |
KR101060463B1 (ko) * | 2010-10-22 | 2011-08-29 | 인제대학교 산학협력단 | 그래핀을 전기영동법으로 증착시켜 제조하는 상대전극의 제조방법, 그 방법에 의하여 제조된 상대전극 및 이를 포함하는 염료감응형 태양전지 |
CN102522213B (zh) * | 2011-12-03 | 2013-11-13 | 三峡大学 | 一种染料敏化太阳能电池碳对电极的制备方法 |
US20220351916A1 (en) * | 2021-05-02 | 2022-11-03 | King Faisal University | DYE-SENSITIZED SOLAR CELL WITH ZnO NANOROD-BASED PHOTOANODE |
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