WO2009008212A1 - 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 - Google Patents

絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 Download PDF

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Publication number
WO2009008212A1
WO2009008212A1 PCT/JP2008/058977 JP2008058977W WO2009008212A1 WO 2009008212 A1 WO2009008212 A1 WO 2009008212A1 JP 2008058977 W JP2008058977 W JP 2008058977W WO 2009008212 A1 WO2009008212 A1 WO 2009008212A1
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WIPO (PCT)
Prior art keywords
producing
wiring board
multilayer wiring
insulating film
semiconductor device
Prior art date
Application number
PCT/JP2008/058977
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English (en)
French (fr)
Inventor
Yasushi Kobayashi
Yoshihiro Nakata
Shirou Ozaki
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Fujitsu Limited
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Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to KR1020097027275A priority Critical patent/KR101158185B1/ko
Priority to JP2009522546A priority patent/JP5267460B2/ja
Priority to CN200880023571.XA priority patent/CN101689412B/zh
Publication of WO2009008212A1 publication Critical patent/WO2009008212A1/ja
Priority to US12/648,804 priority patent/US8580907B2/en

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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Abstract

　低誘電率で高強度な絶縁膜の形成に好適に使用可能な絶縁膜材料、配線間の寄生容量が低減可能な多層配線基板及びその製造方法、並びに、高速で信頼性の高い半導体装置及びその製造方法を提供することを目的とする。 　本発明の絶縁膜材料は、下記構造式（１）で表される構造を有するポリカルボシラン化合物を少なくとも含むことを特徴とする。ただし、前記構造式（１）中、Ｒ１は、ｎ回の繰返しの中で、互いに同一であってもよいし異なっていてもよく、炭素数１～４の炭化水素及び芳香族炭化水素のいずれかを表す。Ｒ２は、ｎ回の繰返しの中で、互いに同一であってもよいし異なっていてもよく、炭素数１～４の炭化水素及び芳香族炭化水素のいずれかを表す。ｎは、５～５，０００の整数を表す。
PCT/JP2008/058977 2007-07-06 2008-05-15 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 WO2009008212A1 (ja)

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KR1020097027275A KR101158185B1 (ko) 2007-07-06 2008-05-15 절연막 재료, 다층 배선 기판과 그 제조 방법, 및 반도체 장치와 그 제조 방법
JP2009522546A JP5267460B2 (ja) 2007-07-06 2008-05-15 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
CN200880023571.XA CN101689412B (zh) 2007-07-06 2008-05-15 绝缘膜材料、多层布线基板及其制造方法和半导体装置及其制造方法
US12/648,804 US8580907B2 (en) 2007-07-06 2009-12-29 Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof

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* Cited by examiner, † Cited by third party
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JP2014227516A (ja) * 2013-05-24 2014-12-08 富士通株式会社 ポリカルボシラン系樹脂、回路基板、半導体装置、ポリカルボシラン系樹脂を製造する方法及び回路基板を製造する方法
TWI833730B (zh) * 2018-02-21 2024-03-01 日商東京威力科創股份有限公司 多層配線之形成方法及記憶媒體

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010065457A2 (en) * 2008-12-02 2010-06-10 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of providing a semiconductor device with a dielectric layer and semiconductor device thereof
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
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US9601530B2 (en) 2008-12-02 2017-03-21 Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US9721825B2 (en) 2008-12-02 2017-08-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
EP2436029A4 (en) 2009-05-29 2013-04-10 Univ Arizona PROCESS FOR PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AT HIGH TEMPERATURES AND FLEXIBLE SEMICONDUCTOR DEVICE THEREFOR
WO2012021197A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
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CN103178001B (zh) * 2011-12-21 2016-06-01 中芯国际集成电路制造(上海)有限公司 处理多孔超低介电常数层的方法
US9368439B2 (en) * 2012-11-05 2016-06-14 Nvidia Corporation Substrate build up layer to achieve both finer design rule and better package coplanarity
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WO2016007708A1 (en) * 2014-07-10 2016-01-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Alkylamino-substituted carbosilane precursors
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US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
CN105990315B (zh) * 2015-01-27 2019-01-29 中芯国际集成电路制造(上海)有限公司 金属互连结构及其制作方法
TWI753794B (zh) 2016-03-23 2022-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 形成含矽膜之組成物及其製法與用途
KR102069659B1 (ko) * 2017-08-31 2020-01-23 해성디에스 주식회사 반도체 패키지 기판 제조방법 및 이를 이용하여 제조된 반도체 패키지 기판

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05156176A (ja) * 1991-11-01 1993-06-22 Shin Etsu Chem Co Ltd 耐熱防汚性塗料及び耐熱防汚性塗膜
JP2005272816A (ja) * 2004-02-26 2005-10-06 Jsr Corp ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法
WO2005108516A1 (ja) * 2004-05-11 2005-11-17 Jsr Corporation 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
WO2005108469A1 (ja) * 2004-05-11 2005-11-17 Jsr Corporation 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
JP2006117917A (ja) * 2004-09-22 2006-05-11 Jsr Corp ポリカルボシランおよびその製造方法
WO2007055097A1 (ja) * 2005-11-11 2007-05-18 Jsr Corporation ポリカルボシランおよびその製造方法、塗布用シリカ系組成物、およびシリカ系膜
JP2007324283A (ja) * 2006-05-31 2007-12-13 Jsr Corp 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811564A (en) * 1997-12-17 1998-09-22 Dow Corning Corporation Polycarbosilane hydroxides and methods for their preparation
JP4756526B2 (ja) 1999-10-25 2011-08-24 富士通株式会社 多孔質化低誘電率絶縁膜の形成方法及び該方法で形成された多孔質化低誘電率絶縁膜及び該多孔質化低誘電率絶縁膜を用いた半導体装置
JP4143845B2 (ja) * 2003-11-26 2008-09-03 Ｊｓｒ株式会社 絶縁膜およびその形成方法、ならびに絶縁膜を有する積層体およびその形成方法
WO2005068541A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
EP1719793A4 (en) * 2004-02-26 2009-05-20 Jsr Corp POLYMER AND MANUFACTURING METHOD THEREFOR, COMPOSITION FOR FORMING AN INSULATING FILM AND PRODUCTION METHOD THEREFOR
CN1957020B (zh) * 2004-05-11 2011-06-08 Jsr株式会社 有机二氧化硅系膜及形成法、布线结构体、半导体装置及膜形成用组合物
US7358317B2 (en) 2004-09-22 2008-04-15 Jsr Corporation Polycarbosilane and method of producing the same
JP4780277B2 (ja) * 2004-10-15 2011-09-28 Ｊｓｒ株式会社 表面疎水化用組成物、表面疎水化方法、半導体装置およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05156176A (ja) * 1991-11-01 1993-06-22 Shin Etsu Chem Co Ltd 耐熱防汚性塗料及び耐熱防汚性塗膜
JP2005272816A (ja) * 2004-02-26 2005-10-06 Jsr Corp ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法
WO2005108516A1 (ja) * 2004-05-11 2005-11-17 Jsr Corporation 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
WO2005108469A1 (ja) * 2004-05-11 2005-11-17 Jsr Corporation 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
JP2006117917A (ja) * 2004-09-22 2006-05-11 Jsr Corp ポリカルボシランおよびその製造方法
WO2007055097A1 (ja) * 2005-11-11 2007-05-18 Jsr Corporation ポリカルボシランおよびその製造方法、塗布用シリカ系組成物、およびシリカ系膜
JP2007324283A (ja) * 2006-05-31 2007-12-13 Jsr Corp 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014132653A (ja) * 2012-12-11 2014-07-17 Air Products And Chemicals Inc アルコキシシリルアミン化合物及びその応用
JP2014227516A (ja) * 2013-05-24 2014-12-08 富士通株式会社 ポリカルボシラン系樹脂、回路基板、半導体装置、ポリカルボシラン系樹脂を製造する方法及び回路基板を製造する方法
TWI833730B (zh) * 2018-02-21 2024-03-01 日商東京威力科創股份有限公司 多層配線之形成方法及記憶媒體

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