ATE539453T1 - Organische elektronische anordnungen und verfahren zu ihrer herstellung unter verwendung von lösungsverarbeitungstechniken - Google Patents

Organische elektronische anordnungen und verfahren zu ihrer herstellung unter verwendung von lösungsverarbeitungstechniken

Info

Publication number
ATE539453T1
ATE539453T1 AT09784981T AT09784981T ATE539453T1 AT E539453 T1 ATE539453 T1 AT E539453T1 AT 09784981 T AT09784981 T AT 09784981T AT 09784981 T AT09784981 T AT 09784981T AT E539453 T1 ATE539453 T1 AT E539453T1
Authority
AT
Austria
Prior art keywords
insulating material
organic electronic
producing
methods
electronic devices
Prior art date
Application number
AT09784981T
Other languages
English (en)
Inventor
Angela Mcconnell
Original Assignee
Cambridge Display Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Display Tech Ltd filed Critical Cambridge Display Tech Ltd
Application granted granted Critical
Publication of ATE539453T1 publication Critical patent/ATE539453T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/191Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
AT09784981T 2008-08-21 2009-08-21 Organische elektronische anordnungen und verfahren zu ihrer herstellung unter verwendung von lösungsverarbeitungstechniken ATE539453T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0815287A GB2462845B (en) 2008-08-21 2008-08-21 Organic electronic devices and methods of making the same using solution processing techniques
PCT/GB2009/002044 WO2010020790A1 (en) 2008-08-21 2009-08-21 Organic electronic devices and methods of making the same using solution processing techniques

Publications (1)

Publication Number Publication Date
ATE539453T1 true ATE539453T1 (de) 2012-01-15

Family

ID=39812386

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09784981T ATE539453T1 (de) 2008-08-21 2009-08-21 Organische elektronische anordnungen und verfahren zu ihrer herstellung unter verwendung von lösungsverarbeitungstechniken

Country Status (8)

Country Link
US (1) US20110180907A1 (de)
EP (1) EP2324517B1 (de)
JP (1) JP2012500488A (de)
KR (1) KR20110058824A (de)
CN (1) CN102150292B (de)
AT (1) ATE539453T1 (de)
GB (1) GB2462845B (de)
WO (1) WO2010020790A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211782B2 (en) * 2009-10-23 2012-07-03 Palo Alto Research Center Incorporated Printed material constrained by well structures
CN105440540A (zh) 2010-09-02 2016-03-30 默克专利股份有限公司 用于电子器件的夹层
US8399290B2 (en) 2011-01-19 2013-03-19 Sharp Laboratories Of America, Inc. Organic transistor with fluropolymer banked crystallization well
RU2014147079A (ru) 2012-04-25 2016-06-20 Мерк Патент Гмбх Блочные структуры для органических электронных устройств
CN104685649B (zh) 2012-09-21 2018-06-15 默克专利股份有限公司 有机半导体配制剂
WO2014072016A1 (en) 2012-11-08 2014-05-15 Merck Patent Gmbh Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith
KR20140064328A (ko) 2012-11-20 2014-05-28 엘지디스플레이 주식회사 유기전계 발광소자 및 이의 제조 방법
US9023683B2 (en) * 2013-05-13 2015-05-05 Sharp Laboratories Of America, Inc. Organic semiconductor transistor with epoxy-based organic resin planarization layer
CN103413832B (zh) * 2013-07-08 2016-01-20 复旦大学 一种金属氧化物薄膜晶体管及其制备方法
KR102080752B1 (ko) * 2013-07-23 2020-02-25 삼성디스플레이 주식회사 봉지 구조물, 봉지 구조물을 포함하는 유기 발광 표시장치 및 유기 발광 표시장치의 제조 방법
US9147615B2 (en) 2014-02-14 2015-09-29 International Business Machines Corporation Ambipolar synaptic devices
JP6514005B2 (ja) * 2014-04-08 2019-05-15 出光興産株式会社 有機エレクトロルミネッセンス素子及びインク組成物
WO2016198142A1 (en) 2015-06-12 2016-12-15 Merck Patent Gmbh Organic electronic devices with fluoropolymer bank structures
US10490534B2 (en) * 2016-05-20 2019-11-26 Innolux Corporation Display device with LED pixels
CN107046106B (zh) * 2016-07-29 2018-08-10 广东聚华印刷显示技术有限公司 像素界定层及其制备方法和应用
US11282906B2 (en) 2016-08-17 2022-03-22 Merck Patent Gmbh Electronic device with bank structures
CN107123751B (zh) * 2017-04-28 2019-04-16 武汉华星光电技术有限公司 一种柔性有机发光二极管显示器及其制作方法
CN110112219B (zh) 2018-02-01 2021-02-09 合肥京东方显示技术有限公司 一种薄膜晶体管、其制备方法、显示基板及显示装置
CN109192875B (zh) * 2018-09-04 2021-01-29 京东方科技集团股份有限公司 背板及制造方法、显示基板及制造方法和显示装置
KR102206329B1 (ko) * 2020-02-13 2021-01-21 엘지디스플레이 주식회사 유기전계 발광소자 및 이의 제조 방법
CN113311048B (zh) * 2021-05-25 2024-03-12 南通大学 纳流控场效应管及其制备方法和应用

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100577903B1 (ko) * 1998-03-17 2006-05-10 세이코 엡슨 가부시키가이샤 박막패터닝용 기판 및 그 표면처리
US6630274B1 (en) * 1998-12-21 2003-10-07 Seiko Epson Corporation Color filter and manufacturing method therefor
JP4175462B2 (ja) * 2001-01-30 2008-11-05 ザ プロクター アンド ギャンブル カンパニー 硬質表面を改質するための被覆及びその適用方法
AU2002313480A1 (en) * 2001-07-09 2003-01-29 Merck Patent Gmbh Polymerisable charge transport compounds
JP2004212946A (ja) * 2002-10-21 2004-07-29 Rohm & Haas Electronic Materials Llc Siポリマー含有フォトレジスト
JP4123172B2 (ja) * 2003-04-01 2008-07-23 セイコーエプソン株式会社 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
JP4103830B2 (ja) * 2003-05-16 2008-06-18 セイコーエプソン株式会社 パターンの形成方法及びパターン形成装置、デバイスの製造方法、アクティブマトリクス基板の製造方法
JP4815761B2 (ja) * 2003-11-27 2011-11-16 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、電子機器
JP2005251809A (ja) * 2004-03-01 2005-09-15 Seiko Epson Corp 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
US7416977B2 (en) * 2004-04-28 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device, liquid crystal television, and EL television
JP2005352105A (ja) * 2004-06-10 2005-12-22 Toppan Printing Co Ltd カラーフィルタ、およびその製造方法
JP4678574B2 (ja) * 2004-08-23 2011-04-27 株式会社リコー 積層構造体、積層構造体を用いた電子素子、電子素子アレイ及び表示装置
JP2007025426A (ja) * 2005-07-20 2007-02-01 Toppan Printing Co Ltd インキ吐出印刷物及びその製造方法
JP4677937B2 (ja) * 2005-07-20 2011-04-27 セイコーエプソン株式会社 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法
JP4725220B2 (ja) * 2005-07-20 2011-07-13 凸版印刷株式会社 インキ吐出印刷物及びその製造方法
JP5011667B2 (ja) * 2005-07-20 2012-08-29 凸版印刷株式会社 印刷物及びその製造方法
JP4730008B2 (ja) * 2005-07-20 2011-07-20 凸版印刷株式会社 印刷物の製造方法
DE112006002220B4 (de) * 2005-08-23 2018-05-24 Cambridge Display Technology Ltd. Organische elektronische Vorrichtungsstrukturen und Herstellungsverfahren
JP2007094307A (ja) * 2005-09-30 2007-04-12 Toppan Printing Co Ltd カラーフィルタ及びその製造方法
JP2008012834A (ja) * 2006-07-07 2008-01-24 Toray Ind Inc 光学フィルム
JP4407673B2 (ja) * 2006-07-10 2010-02-03 セイコーエプソン株式会社 バンク構造、電子回路、及び電子デバイスの製造方法、並びにパターン形成方法
JP2008047893A (ja) * 2006-08-11 2008-02-28 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
JP2008083682A (ja) * 2006-08-31 2008-04-10 Toray Ind Inc フラットパネルディスプレイ用光学フィルター
US20080314273A1 (en) * 2007-06-20 2008-12-25 Toppan Printing Co., Ltd Bank formed substrate and color pattern formed substrate
US7599024B2 (en) * 2007-08-24 2009-10-06 Toppan Printing Co., Ltd. Substrate provided with bank and substrate provided with color pattern

Also Published As

Publication number Publication date
US20110180907A1 (en) 2011-07-28
JP2012500488A (ja) 2012-01-05
EP2324517A1 (de) 2011-05-25
GB0815287D0 (en) 2008-09-24
CN102150292B (zh) 2013-05-08
CN102150292A (zh) 2011-08-10
WO2010020790A1 (en) 2010-02-25
EP2324517B1 (de) 2011-12-28
GB2462845B (en) 2011-07-27
GB2462845A (en) 2010-02-24
KR20110058824A (ko) 2011-06-01

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