BRPI0703903A - dispositivos eletrÈnicos - Google Patents

dispositivos eletrÈnicos

Info

Publication number
BRPI0703903A
BRPI0703903A BRPI0703903-4A BRPI0703903A BRPI0703903A BR PI0703903 A BRPI0703903 A BR PI0703903A BR PI0703903 A BRPI0703903 A BR PI0703903A BR PI0703903 A BRPI0703903 A BR PI0703903A
Authority
BR
Brazil
Prior art keywords
electronic devices
halogen
mixtures
semiconductor
thin
Prior art date
Application number
BRPI0703903-4A
Other languages
English (en)
Inventor
Beng S Ong
Hualong Pan
Yuning Li
Yiliang Wu
Ping Liu
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/586,449 external-priority patent/US7834132B2/en
Priority claimed from US11/586,448 external-priority patent/US7820782B2/en
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of BRPI0703903A publication Critical patent/BRPI0703903A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D519/00—Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/141—Side-chains having aliphatic units
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
    • C08G2261/3243—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/92—TFT applications

Abstract

DISPOSITIVOS ELETRÈNICOS. Um dispositivo eletrónico, tal como um transistor de película fina contendo um semicondutor de fórmula/estrutura em que R, R<39> e R" são, por exemplo, independentemente hidrogênio, um hidrocarboneto adequado, um grupo contendo hetero adequado, um halogênio, ou misturas destes; e n representa o número de unidades de repetição.
BRPI0703903-4A 2006-10-25 2007-10-25 dispositivos eletrÈnicos BRPI0703903A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/586,449 US7834132B2 (en) 2006-10-25 2006-10-25 Electronic devices
US11/586,448 US7820782B2 (en) 2006-10-25 2006-10-25 Poly(dithienylbenzo[1,2-b:4,5-b′]dithiophene) polymers

Publications (1)

Publication Number Publication Date
BRPI0703903A true BRPI0703903A (pt) 2008-06-10

Family

ID=38926331

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0703903-4A BRPI0703903A (pt) 2006-10-25 2007-10-25 dispositivos eletrÈnicos

Country Status (7)

Country Link
EP (1) EP1916250B1 (pt)
JP (1) JP5472874B2 (pt)
KR (1) KR101397662B1 (pt)
BR (1) BRPI0703903A (pt)
CA (1) CA2606985C (pt)
DE (1) DE602007011709D1 (pt)
TW (1) TW200834572A (pt)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090181509A1 (en) * 2008-01-14 2009-07-16 Xerox Corporation Polymer semiconductors with high mobility
JP2009215546A (ja) * 2008-02-13 2009-09-24 Sumitomo Chemical Co Ltd 多環縮環化合物、多環縮環重合体及びこれらを含む有機薄膜
US7968871B2 (en) * 2008-04-11 2011-06-28 Xerox Corporation Organic thin film transistor
WO2010000669A1 (en) * 2008-07-02 2010-01-07 Basf Se Poly(5,5'bis(thiophen-2-yl)-benzo[2,1-b;3,4-b']dithiophene) and its use as high performance solution processable semiconducting polymer
US8367798B2 (en) 2008-09-29 2013-02-05 The Regents Of The University Of California Active materials for photoelectric devices and devices that use the materials
WO2010135701A1 (en) * 2009-05-21 2010-11-25 Polyera Corporation Conjugated polymers and their use in optoelectronic devices
KR101780083B1 (ko) * 2009-12-02 2017-10-10 바스프 에스이 디티에노벤조-티에노［3,2-ｂ］티오펜 공중합체 및 고성능 용액 공정 가능한 반도체 중합체로서 이의 용도
SG184448A1 (en) * 2010-04-19 2012-11-29 Merck Patent Gmbh Polymers of benzodithiophene and their use as organic semiconductors
US8895693B2 (en) * 2010-06-25 2014-11-25 Samsung Electronics Co., Ltd. Electron-donating polymers and organic solar cells including the same
GB2494607B (en) * 2010-07-09 2018-05-02 Merck Patent Gmbh Semiconducting polymers
DE102010032737A1 (de) * 2010-07-29 2012-02-02 Merck Patent Gmbh Polymere enthaltend substituierte Benzodithiopheneinheiten, Blends enthaltend diese Polymere sowie Vorrichtungen enthaltend diese Polymere oder Blends
US8759421B2 (en) * 2010-08-31 2014-06-24 Samsung Electronics Co., Ltd. Continuous process for preparing nanodispersions using an ultrasonic flow-through heat exchanger
US9790236B2 (en) 2011-01-05 2017-10-17 Samsung Electronics Co., Ltd. Organic semiconductor compound, and transistor and electronic device including the same
US20120168726A1 (en) * 2011-01-05 2012-07-05 Samsung Electronics Co., Ltd. Organic semiconductor compound, and transistor and electronic device including the same
US8394918B2 (en) 2011-02-28 2013-03-12 Corning Incorporated Five-ring fused heteroaromatic compounds and conjugated polymers thereof
WO2012129511A2 (en) * 2011-03-24 2012-09-27 Northwestern University Semiconducting compounds and devices incorporating same
KR101853395B1 (ko) 2011-05-23 2018-04-30 삼성전자주식회사 전자 공여체 고분자 및 이를 포함하는 태양 전지
CN103687891A (zh) * 2011-09-23 2014-03-26 海洋王照明科技股份有限公司 二氟代苯并三唑基太阳能电池聚合材料及其制备方法和应用
CN103842402B (zh) 2011-09-28 2018-12-11 默克专利股份有限公司 共轭聚合物
KR101777326B1 (ko) 2011-10-05 2017-09-12 삼성전자주식회사 전자 공여체 고분자 및 이를 포함하는 유기 태양 전지
WO2014072292A2 (en) * 2012-11-07 2014-05-15 Basf Se Polymers based on naphthodiones
CN104797624B (zh) * 2012-12-04 2018-08-10 巴斯夫欧洲公司 用于电子应用的官能化苯并二噻吩聚合物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004024629D1 (de) 2003-10-15 2010-01-28 Merck Patent Gmbh Polybenzodithiophene
JP2005206750A (ja) * 2004-01-26 2005-08-04 Konica Minolta Holdings Inc 有機半導体材料、有機トランジスタ、電界効果トランジスタ、スイッチング素子及び５員複素環化合物
CN100443483C (zh) * 2005-12-08 2008-12-17 中国科学院长春应用化学研究所 稠环单元封端的齐聚噻吩类高迁移率有机半导体材料及用途

Also Published As

Publication number Publication date
CA2606985C (en) 2011-02-01
JP5472874B2 (ja) 2014-04-16
EP1916250A1 (en) 2008-04-30
KR101397662B1 (ko) 2014-06-27
CA2606985A1 (en) 2008-04-25
EP1916250B1 (en) 2011-01-05
JP2008109135A (ja) 2008-05-08
KR20080037580A (ko) 2008-04-30
TW200834572A (en) 2008-08-16
DE602007011709D1 (de) 2011-02-17

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2278 DE 02/09/2014.