WO2008149687A1 - ドーピング装置、及びシリコン単結晶の製造方法 - Google Patents

ドーピング装置、及びシリコン単結晶の製造方法 Download PDF

Info

Publication number
WO2008149687A1
WO2008149687A1 PCT/JP2008/059509 JP2008059509W WO2008149687A1 WO 2008149687 A1 WO2008149687 A1 WO 2008149687A1 JP 2008059509 W JP2008059509 W JP 2008059509W WO 2008149687 A1 WO2008149687 A1 WO 2008149687A1
Authority
WO
WIPO (PCT)
Prior art keywords
dopant
section
storing section
semiconductor melt
liquefied
Prior art date
Application number
PCT/JP2008/059509
Other languages
English (en)
French (fr)
Inventor
Yasuhito Narushima
Shinichi Kawazoe
Fukuo Ogawa
Toshimichi Kubota
Original Assignee
Sumco Techxiv Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corporation filed Critical Sumco Techxiv Corporation
Priority to DE112008000074.3T priority Critical patent/DE112008000074B4/de
Priority to US12/524,331 priority patent/US8715416B2/en
Publication of WO2008149687A1 publication Critical patent/WO2008149687A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Abstract

　ドーピング装置（４）は、上部に開口部（４１３Ａ）が形成され、半導体融液表面近傍で気化する第１ドーパント（Ｄ１）が収容される第１ドーパント収容部（４１）と、半導体融液表面近傍で液化する第２ドーパント（Ｄ２）を保持するとともに、液化したドーパントを下方に流す連通孔（４２２Ａ）が形成されたドーパント保持部（４２２）と、ドーパント保持部（４２２）の下部に設けられ、連通孔（４２２Ａ）から流れ出した液化したドーパントを半導体融液表面に導く導管（４２１）とを有する第２ドーパント収容部（４２）と、下端が開口し、上端が閉塞された筒状体（４３１）から構成され、第１ドーパント収容部（４１）及び第２ドーパント収容部（４２）を収容し、気化した第１ドーパントのドーパントガスを半導体融液表面に案内する案内部（４３）とを備える。
PCT/JP2008/059509 2007-05-31 2008-05-23 ドーピング装置、及びシリコン単結晶の製造方法 WO2008149687A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112008000074.3T DE112008000074B4 (de) 2007-05-31 2008-05-23 Dotierungsvorrichtung und Verfahren zum Herstellen eines Siliziumeinkristalls
US12/524,331 US8715416B2 (en) 2007-05-31 2008-05-23 Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007146081A JP4359320B2 (ja) 2007-05-31 2007-05-31 ドーピング装置、及びシリコン単結晶の製造方法
JP2007-146081 2007-05-31

Publications (1)

Publication Number Publication Date
WO2008149687A1 true WO2008149687A1 (ja) 2008-12-11

Family

ID=40093511

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059509 WO2008149687A1 (ja) 2007-05-31 2008-05-23 ドーピング装置、及びシリコン単結晶の製造方法

Country Status (4)

Country Link
US (1) US8715416B2 (ja)
JP (1) JP4359320B2 (ja)
DE (1) DE112008000074B4 (ja)
WO (1) WO2008149687A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016501826A (ja) * 2012-12-31 2016-01-21 エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニＭＥＭＣ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ， ＳｐＡ 単結晶半導体材料の制御されたドーピングのための液体ドーピングシステムおよび方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4516096B2 (ja) * 2007-05-31 2010-08-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
US20140033968A1 (en) * 2012-07-31 2014-02-06 MEMC Electronic Materials S.p.A Controlled Doping Device For Single Crystal Semiconductor Material and Related Methods
US11028499B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Methods for preparing a doped ingot
US11028500B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156993A (ja) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Ｃｚ単結晶のド−プ方法およびその装置
JPH097961A (ja) * 1995-06-22 1997-01-10 Motorola Inc 高ドープｎ＋基板およびその製造方法
JP2000319087A (ja) * 1999-04-28 2000-11-21 Toshiba Ceramics Co Ltd 砒素ドーパントおよびこれを用いたシリコン単結晶の製造方法
JP2004137140A (ja) * 2002-10-15 2004-05-13 Siltron Inc シリコン単結晶成長装置および低融点ドーパントの注入方法
JP2006052133A (ja) * 2004-08-12 2006-02-23 Siltronic Ag シリコンからなるドーピングされた半導体ウェーハを製造する方法およびこの種の半導体ウェーハ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2682600B2 (ja) 1988-03-25 1997-11-26 住友電気工業株式会社 ▲ｉｉｉ▼−ｖ族化合物半導体単結晶の製造方法
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
DE10007179B4 (de) * 2000-02-17 2004-08-19 Siltronic Ag Verfahren und Vorrichtung zum Dotieren einer Schmelze mit einem Dotierstoff
JP4530483B2 (ja) * 2000-05-31 2010-08-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｃｚ法単結晶引上げ装置
JP3536087B2 (ja) 2000-11-07 2004-06-07 信州大学長 無転位シリコン単結晶の製造方法
JP2003002785A (ja) 2001-06-15 2003-01-08 Shin Etsu Handotai Co Ltd 表層部にボイド無欠陥層を有する直径３００ｍｍ以上のシリコン単結晶ウエーハおよびその製造方法
WO2003027362A1 (en) * 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder
JP4708697B2 (ja) 2002-11-11 2011-06-22 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハ
JP4380204B2 (ja) 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
JP4590876B2 (ja) 2004-02-04 2010-12-01 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハの製造方法及びその方法で製造されたシリコンウェーハ
JP4516096B2 (ja) * 2007-05-31 2010-08-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156993A (ja) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Ｃｚ単結晶のド−プ方法およびその装置
JPH097961A (ja) * 1995-06-22 1997-01-10 Motorola Inc 高ドープｎ＋基板およびその製造方法
JP2000319087A (ja) * 1999-04-28 2000-11-21 Toshiba Ceramics Co Ltd 砒素ドーパントおよびこれを用いたシリコン単結晶の製造方法
JP2004137140A (ja) * 2002-10-15 2004-05-13 Siltron Inc シリコン単結晶成長装置および低融点ドーパントの注入方法
JP2006052133A (ja) * 2004-08-12 2006-02-23 Siltronic Ag シリコンからなるドーピングされた半導体ウェーハを製造する方法およびこの種の半導体ウェーハ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016501826A (ja) * 2012-12-31 2016-01-21 エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニＭＥＭＣ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ， ＳｐＡ 単結晶半導体材料の制御されたドーピングのための液体ドーピングシステムおよび方法
CN108103572A (zh) * 2012-12-31 2018-06-01 Memc电子材料有限公司 用于单晶半导体材料的受控掺杂的液体掺杂系统和方法
US10006145B2 (en) 2012-12-31 2018-06-26 Corner Star Limited Liquid doping systems and methods for controlled doping of single crystal semiconductor material
CN108103572B (zh) * 2012-12-31 2020-06-16 各星有限公司 用于单晶半导体材料的受控掺杂的液体掺杂系统和方法

Also Published As

Publication number Publication date
JP4359320B2 (ja) 2009-11-04
JP2008297165A (ja) 2008-12-11
US20100031871A1 (en) 2010-02-11
US8715416B2 (en) 2014-05-06
DE112008000074T5 (de) 2010-04-15
DE112008000074B4 (de) 2018-02-01

Similar Documents

Publication Publication Date Title
WO2008149687A1 (ja) ドーピング装置、及びシリコン単結晶の製造方法
GB2472152A (en) Valve apparatus for inflow control
WO2008014434A3 (en) Crystal growth method and reactor design
AR104648A2 (es) Método para liberar gas de un líquido contenido en una botella
MX2009012943A (es) Anillo de guia para alambre de soldadura.
ZA200802240B (en) Method and assembly for guiding a dispensing line through a beverage dispenser
TW200717653A (en) A method of forming a silicon oxynitride film with tensile stress
WO2008089181A3 (en) Guided diameter sic sublimation growth with multi-layer growth guide
WO2008149686A1 (ja) ドーパントの注入方法、及びドーピング装置
WO2009086257A8 (en) Susceptor with support bosses
GB2468453A (en) Apparatus for reducing water production in gas wells
TW200721366A (en) Body for keeping a wafer, method of manufacturing the same and device using the same
PL1810932T3 (pl) Opakowanie oraz sposób i urządzenie do wytwarzania opakowania
WO2009054529A1 (ja) 石英ガラスルツボとその製造方法およびその用途
BRPI0605361A (pt) tanque de combustìvel
CA2608102A1 (en) Method of producing group iii nitride crystal, apparatus for producing group iii nitride crystal, and group iii nitride crystal
WO2012095475A3 (en) Gasification reactor
TW200706232A (en) Gas separating device and gas separating method
WO2008090591A1 (ja) 複筒式ショックアブソーバの減衰特性の変更方法
JP2010030853A5 (ja)
MX2010003990A (es) Adaptador de valvula para suministro de fluidos.
JP2007002918A (ja) ガス遮断水封弁
TW200714753A (en) Single crystal silicon pulling apparatus, method for preventing contamination of silicon melt, and apparatus for preventing contamination of silicon melt
JP4878794B2 (ja) 結晶成長装置および製造方法
TW200639930A (en) Inner tube for furnace and furnace apparatus using the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08764555

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1120080000743

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 12524331

Country of ref document: US

RET De translation (de og part 6b)

Ref document number: 112008000074

Country of ref document: DE

Date of ref document: 20100415

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 08764555

Country of ref document: EP

Kind code of ref document: A1