WO2008140058A1 - シリコン基材の加工方法とその加工品および加工装置 - Google Patents

シリコン基材の加工方法とその加工品および加工装置 Download PDF

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Publication number
WO2008140058A1
WO2008140058A1 PCT/JP2008/058666 JP2008058666W WO2008140058A1 WO 2008140058 A1 WO2008140058 A1 WO 2008140058A1 JP 2008058666 W JP2008058666 W JP 2008058666W WO 2008140058 A1 WO2008140058 A1 WO 2008140058A1
Authority
WO
WIPO (PCT)
Prior art keywords
base material
silicon base
processing
anode
cathode
Prior art date
Application number
PCT/JP2008/058666
Other languages
English (en)
French (fr)
Inventor
Terunori Warabisako
Toshikazu Shimada
Nobuyoshi Koshida
Bernard Gelloz
Keiichi Kanehori
Original Assignee
Quantum 14 Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum 14 Kk filed Critical Quantum 14 Kk
Priority to EP08752549A priority Critical patent/EP2154269A4/en
Priority to US12/451,357 priority patent/US20100193362A1/en
Priority to JP2009514156A priority patent/JP4562801B2/ja
Priority to CN2008800087281A priority patent/CN101680106B/zh
Publication of WO2008140058A1 publication Critical patent/WO2008140058A1/ja

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B23H3/04—Electrodes specially adapted therefor or their manufacture
    • B23H3/06—Electrode material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B23H3/08—Working media
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/12—Shape or form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

シリコン基材１を陽極とし、微細な白金部材２を陰極とし、その間に電解液４の介在する状況において、多孔質形成と電解研磨の両モードが混在する条件で定電流モードで陽極酸化を行う。シリコンの溶出に伴い白金部材２をシリコン基材１中に嵌入せしめ、鑽孔、切断、片押し等の加工を行う。使用エネルギーが少なく、室温で加工できるため、加工表面の結晶品質の低下が無い。これにより、従来の太陽電池用シリコン基材の切断等の加工での材料消費の大きな機械的方法やエネルギー単価の高いレーザー等を用いることなく、しかも加工面には結晶損傷を残すことなく、効率的に高精度で加工することができる。
PCT/JP2008/058666 2007-05-09 2008-05-09 シリコン基材の加工方法とその加工品および加工装置 WO2008140058A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08752549A EP2154269A4 (en) 2007-05-09 2008-05-09 PROCESS FOR PROCESSING SILICON BASE MATERIAL, OBJECT AND PROCESSING DEVICE PROCESSED BY THE METHOD
US12/451,357 US20100193362A1 (en) 2007-05-09 2008-05-09 Method for processing silicon base material, article processed by the method, and processing apparatus
JP2009514156A JP4562801B2 (ja) 2007-05-09 2008-05-09 シリコン基材の加工方法および加工装置
CN2008800087281A CN101680106B (zh) 2007-05-09 2008-05-09 硅基材的加工方法、其加工品和加工装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007125053 2007-05-09
JP2007-125053 2007-05-09

Publications (1)

Publication Number Publication Date
WO2008140058A1 true WO2008140058A1 (ja) 2008-11-20

Family

ID=40002252

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058666 WO2008140058A1 (ja) 2007-05-09 2008-05-09 シリコン基材の加工方法とその加工品および加工装置

Country Status (6)

Country Link
US (1) US20100193362A1 (ja)
EP (1) EP2154269A4 (ja)
JP (1) JP4562801B2 (ja)
KR (1) KR20100015302A (ja)
CN (1) CN101680106B (ja)
WO (1) WO2008140058A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013112880A (ja) * 2011-11-30 2013-06-10 Dainippon Screen Mfg Co Ltd 陽極化成装置及びそれを備えた陽極化成システム並びに半導体ウエハ
JP2014073578A (ja) * 2012-03-01 2014-04-24 Canon Marketing Japan Inc マルチワイヤ放電加工システム、マルチワイヤ放電加工装置、電源装置、マルチワイヤ放電加工方法、半導体基板、太陽電池基板、基板の製造システム、基板の製造方法。
JP2015216298A (ja) * 2014-05-13 2015-12-03 株式会社ディスコ ウェーハの加工方法

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MX350778B (es) 2011-05-17 2017-09-14 Univ Indiana Res & Tech Corp Electrodos recargables de tierra alcalina y de metal alcalino con crecimiento dendrítico mejorado y métodos para hacer y usar los mismos.
EP2560196A1 (en) * 2011-08-15 2013-02-20 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and system for forming a metallic structure
TWI583468B (zh) * 2012-12-04 2017-05-21 梅耶博格（瑞士）股份有限公司 線材管理系統、線鋸及切割方法
ITCB20130004A1 (it) * 2013-05-17 2014-11-18 Lucia Nole Soluzione fotovoltaica
KR20160009816A (ko) 2014-07-16 2016-01-27 한국에너지기술연구원 와이어 방전 가공을 이용한 실리콘 웨이퍼 슬라이싱 장치
CN104289775B (zh) * 2014-09-12 2017-09-19 南京航空航天大学 电极复合运动电解切割方法
TWI585841B (zh) * 2015-02-06 2017-06-01 國立台灣科技大學 基板及其加工方法與裝置
CN106216784A (zh) * 2016-07-21 2016-12-14 哈尔滨工业大学 一种电化学或电火花/电化学复合加工中未加工表面的保护方法
CN111267254A (zh) * 2018-12-05 2020-06-12 上海新昇半导体科技有限公司 一种晶棒切片方法
CN111267247A (zh) * 2018-12-05 2020-06-12 上海新昇半导体科技有限公司 一种晶棒切片装置
CN111267245A (zh) * 2018-12-05 2020-06-12 上海新昇半导体科技有限公司 一种晶棒切片装置
CN111267244A (zh) * 2018-12-05 2020-06-12 上海新昇半导体科技有限公司 一种晶棒切片装置
CN111267246A (zh) * 2018-12-05 2020-06-12 上海新昇半导体科技有限公司 一种晶棒切片装置和方法

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Publication number Priority date Publication date Assignee Title
JP2013112880A (ja) * 2011-11-30 2013-06-10 Dainippon Screen Mfg Co Ltd 陽極化成装置及びそれを備えた陽極化成システム並びに半導体ウエハ
JP2014073578A (ja) * 2012-03-01 2014-04-24 Canon Marketing Japan Inc マルチワイヤ放電加工システム、マルチワイヤ放電加工装置、電源装置、マルチワイヤ放電加工方法、半導体基板、太陽電池基板、基板の製造システム、基板の製造方法。
JP2015216298A (ja) * 2014-05-13 2015-12-03 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
EP2154269A1 (en) 2010-02-17
JPWO2008140058A1 (ja) 2010-08-05
CN101680106A (zh) 2010-03-24
US20100193362A1 (en) 2010-08-05
CN101680106B (zh) 2012-04-18
EP2154269A4 (en) 2012-11-21
JP4562801B2 (ja) 2010-10-13
KR20100015302A (ko) 2010-02-12

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