WO2009048099A1 - 研磨工具構成体、研磨表層及び研磨方法 - Google Patents

研磨工具構成体、研磨表層及び研磨方法 Download PDF

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Publication number
WO2009048099A1
WO2009048099A1 PCT/JP2008/068363 JP2008068363W WO2009048099A1 WO 2009048099 A1 WO2009048099 A1 WO 2009048099A1 JP 2008068363 W JP2008068363 W JP 2008068363W WO 2009048099 A1 WO2009048099 A1 WO 2009048099A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
surface layer
material layer
tool structure
device wafer
Prior art date
Application number
PCT/JP2008/068363
Other languages
English (en)
French (fr)
Inventor
Shigeru Tominaga
Daisuke Abe
Seiichi Kondo
Original Assignee
Roki Techno Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roki Techno Co., Ltd. filed Critical Roki Techno Co., Ltd.
Publication of WO2009048099A1 publication Critical patent/WO2009048099A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

　導電性を有する被研磨体を、ダメージを与えずに安定して研磨することができ、さらに低コストで電気化学的機械的研磨をすることができる研磨工具構成体、研磨表層及び研磨方法を提供する。 　第１導電材層６２と第２導電材層６４とが、デバイスウエハＤの径より小さい複数の電解液収容部Ｆに保持された電解液Ｅを介して電気化学的に結合した電解セルを形成し、デバイスウエハＤの配線材層Ｄ１に合成樹脂製の研磨部材６１のみを物理的又は機械的に接触させて、電気化学的機械的研磨をする。
PCT/JP2008/068363 2007-10-09 2008-10-09 研磨工具構成体、研磨表層及び研磨方法 WO2009048099A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007262962 2007-10-09
JP2007-262962 2007-10-09

Publications (1)

Publication Number Publication Date
WO2009048099A1 true WO2009048099A1 (ja) 2009-04-16

Family

ID=40549242

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068363 WO2009048099A1 (ja) 2007-10-09 2008-10-09 研磨工具構成体、研磨表層及び研磨方法

Country Status (1)

Country Link
WO (1) WO2009048099A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102453444A (zh) * 2010-10-26 2012-05-16 比亚迪股份有限公司 一种用于非晶合金的抛光液以及一种非晶合金的抛光方法
CN109378286A (zh) * 2018-11-13 2019-02-22 浙江师范大学 一种电化学机械复合抛光不锈钢衬底的设备及工艺
WO2020137713A1 (ja) * 2018-12-26 2020-07-02 秋田県 切断方法及び切断装置
US12017293B2 (en) 2022-11-03 2024-06-25 Hangzhou Sizone Electronic Technology Inc. Electrochemical mechanical polishing and planarization equipment for processing conductive wafer substrate
TWI851146B (zh) 2022-11-03 2024-08-01 大陸商杭州眾硅電子科技有限公司 一種處理導電型晶圓基底的電化學機械研磨及平坦化設備

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003080898A1 (en) * 2002-03-25 2003-10-02 Ebara Corporation Electrochemical machine and electrochemical machining method
JP3100987U (ja) * 2002-05-07 2004-06-03 アプライド マテリアルズ インコーポレイテッド 電気化学的機械研摩の為の導電性研磨物
JP2004250776A (ja) * 2002-12-27 2004-09-09 Ebara Corp 基板処理装置及び方法
JP2007519828A (ja) * 2004-01-29 2007-07-19 アプライド　マテリアルズ　インコーポレイテッド 基板を研磨するための方法及び組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003080898A1 (en) * 2002-03-25 2003-10-02 Ebara Corporation Electrochemical machine and electrochemical machining method
JP3100987U (ja) * 2002-05-07 2004-06-03 アプライド マテリアルズ インコーポレイテッド 電気化学的機械研摩の為の導電性研磨物
JP2004250776A (ja) * 2002-12-27 2004-09-09 Ebara Corp 基板処理装置及び方法
JP2007519828A (ja) * 2004-01-29 2007-07-19 アプライド　マテリアルズ　インコーポレイテッド 基板を研磨するための方法及び組成物

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102453444A (zh) * 2010-10-26 2012-05-16 比亚迪股份有限公司 一种用于非晶合金的抛光液以及一种非晶合金的抛光方法
CN102453444B (zh) * 2010-10-26 2013-12-04 比亚迪股份有限公司 一种用于非晶合金的抛光液以及一种非晶合金的抛光方法
CN109378286A (zh) * 2018-11-13 2019-02-22 浙江师范大学 一种电化学机械复合抛光不锈钢衬底的设备及工艺
CN109378286B (zh) * 2018-11-13 2024-04-23 浙江师范大学 一种电化学机械复合抛光不锈钢衬底的设备及工艺
WO2020137713A1 (ja) * 2018-12-26 2020-07-02 秋田県 切断方法及び切断装置
JPWO2020137713A1 (ja) * 2018-12-26 2021-10-14 秋田県 切断方法及び切断装置
JP7089257B2 (ja) 2018-12-26 2022-06-22 秋田県 切断方法及び切断装置
US12017293B2 (en) 2022-11-03 2024-06-25 Hangzhou Sizone Electronic Technology Inc. Electrochemical mechanical polishing and planarization equipment for processing conductive wafer substrate
TWI851146B (zh) 2022-11-03 2024-08-01 大陸商杭州眾硅電子科技有限公司 一種處理導電型晶圓基底的電化學機械研磨及平坦化設備

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