WO2008130012A1 - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
WO2008130012A1
WO2008130012A1 PCT/JP2008/057539 JP2008057539W WO2008130012A1 WO 2008130012 A1 WO2008130012 A1 WO 2008130012A1 JP 2008057539 W JP2008057539 W JP 2008057539W WO 2008130012 A1 WO2008130012 A1 WO 2008130012A1
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WO
WIPO (PCT)
Prior art keywords
power semiconductor
semiconductor module
components
bonded
insulating section
Prior art date
Application number
PCT/JP2008/057539
Other languages
English (en)
French (fr)
Inventor
Yuji Yagi
Yasushi Yamada
Ikuo Nakagawa
Takashi Atsumi
Mikio Shirai
Ikuo Ohnuma
Kiyohito Ishida
Yoshikazu Takaku
Original Assignee
Toyota Jidosha Kabushiki Kaisha
Tohoku University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Jidosha Kabushiki Kaisha, Tohoku University filed Critical Toyota Jidosha Kabushiki Kaisha
Priority to CN2008800119121A priority Critical patent/CN101657899B/zh
Priority to DE112008001023T priority patent/DE112008001023T5/de
Priority to US12/596,382 priority patent/US20100109016A1/en
Publication of WO2008130012A1 publication Critical patent/WO2008130012A1/ja

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    • H01L2924/351—Thermal stress

Abstract

　２つの部品の間を、Ｂｉ系はんだ材料により接合してなるパワー半導体モジュールであって、前記２つの部品のＢｉ系はんだ材による被接合面にＣｕ層を備える。被接合部品である上記２つの部品は、半導体素子と絶縁部、又は絶縁部と放熱板の組み合わせである。絶縁部は、Ｃｕ／ＳｉＮｘ／Ｃｕの積層体で構成される。
PCT/JP2008/057539 2007-04-17 2008-04-17 パワー半導体モジュール WO2008130012A1 (ja)

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CN2008800119121A CN101657899B (zh) 2007-04-17 2008-04-17 功率半导体模块
DE112008001023T DE112008001023T5 (de) 2007-04-17 2008-04-17 Leistungs-Halbleitermodul
US12/596,382 US20100109016A1 (en) 2007-04-17 2008-04-17 Power semiconductor module

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JP2007108311A JP4964009B2 (ja) 2007-04-17 2007-04-17 パワー半導体モジュール
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