WO2008111447A1 - 光導波路及びその製造方法 - Google Patents

光導波路及びその製造方法 Download PDF

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Publication number
WO2008111447A1
WO2008111447A1 PCT/JP2008/053924 JP2008053924W WO2008111447A1 WO 2008111447 A1 WO2008111447 A1 WO 2008111447A1 JP 2008053924 W JP2008053924 W JP 2008053924W WO 2008111447 A1 WO2008111447 A1 WO 2008111447A1
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WIPO (PCT)
Prior art keywords
core layer
optical waveguide
width
thickness
semiconductor material
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PCT/JP2008/053924
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English (en)
French (fr)
Inventor
Masashige Ishizaka
Original Assignee
Nec Corporation
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Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009503987A priority Critical patent/JP5413810B2/ja
Priority to US12/530,759 priority patent/US8126301B2/en
Publication of WO2008111447A1 publication Critical patent/WO2008111447A1/ja

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/1228Tapered waveguides, e.g. integrated spot-size transformers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/30Optical coupling means for use between fibre and thin-film device
    • G02B6/305Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/12061Silicon

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

 同一のプロセスでSOI光導波路コア層の幅及び厚さの両方を同時に狭窄することができ、製作工程の簡便化及び光学損失の低減を実現することが可能な光導波路及びその製造方法を提供する。光導波路は、半導体基板上に形成された第一のクラッド層と、第一のクラッド層上部に第一のクラッド層よりも屈折率の高い半導体材料で形成された第一のコア層と、第一のコア層上部に第一のコア層よりも屈折率の低い材料で形成された第二のクラッド層とを有する。第一のコア層の幅は、部分的に熱酸化した酸化膜で挟まれた非酸化の半導体材料の幅で規定されている。第一のコア層の厚さは、部分的に熱酸化した酸化膜と第一のクラッド層とで挟まれた非酸化の半導体材料の厚さで規定されている。光導波路の少なくとも入出力部分に第一のコア層の幅および厚さが共に光の伝播方向に対して単調に減少或いは増加するテーパ状の導波路部分を有する。
PCT/JP2008/053924 2007-03-14 2008-03-05 光導波路及びその製造方法 WO2008111447A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009503987A JP5413810B2 (ja) 2007-03-14 2008-03-05 光導波路及びその製造方法
US12/530,759 US8126301B2 (en) 2007-03-14 2008-03-05 Optical waveguide and method for producing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-065083 2007-03-14
JP2007065083 2007-03-14
JP2008-023778 2008-02-04
JP2008023778 2008-02-04

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WO2008111447A1 true WO2008111447A1 (ja) 2008-09-18

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US (1) US8126301B2 (ja)
JP (1) JP5413810B2 (ja)
WO (1) WO2008111447A1 (ja)

Cited By (13)

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JP2010250112A (ja) * 2009-04-16 2010-11-04 Fujitsu Ltd 光導波路の製造方法
JP2011197453A (ja) * 2010-03-19 2011-10-06 Furukawa Electric Co Ltd:The 半導体光導波路素子、半導体光導波路アレイ素子、およびその製造方法
JP5759039B1 (ja) * 2014-03-31 2015-08-05 日本電信電話株式会社 光結合構造
US9335475B2 (en) 2013-09-20 2016-05-10 Oki Electric Industry Co., Ltd. Method of manufacturing an optical device having a stepwise or tapered light input/output part
US9435949B2 (en) 2014-03-25 2016-09-06 Nec Corporation Optical integrated circuit and manufacturing method thereof
CN106164723A (zh) * 2014-04-08 2016-11-23 华为技术有限公司 使用绝热锥形波导的边缘耦合
US9810846B2 (en) 2010-10-14 2017-11-07 Huawei Technologies Co., Ltd. Coupling methods and systems using a taper
US9899799B2 (en) 2014-03-07 2018-02-20 Nec Corporation Optical waveguide, and optical component and variable wavelength laser which use the same
WO2018179752A1 (ja) * 2017-03-30 2018-10-04 旭化成エレクトロニクス株式会社 光導波路、光学式濃度測定装置および光導波路の製造方法
JPWO2017135436A1 (ja) * 2016-02-04 2018-11-29 古河電気工業株式会社 光素子及びその製造方法、並びに光変調器
CN108983352A (zh) * 2018-08-29 2018-12-11 南通赛勒光电科技有限公司 一种端面耦合器及其制备方法
WO2022254701A1 (ja) * 2021-06-04 2022-12-08 日本電信電話株式会社 光導波回路およびその製造方法
WO2023243014A1 (ja) * 2022-06-15 2023-12-21 日本電信電話株式会社 光導波路接続構造

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JP5413810B2 (ja) * 2007-03-14 2014-02-12 日本電気株式会社 光導波路及びその製造方法
JP5691216B2 (ja) * 2010-03-29 2015-04-01 富士通株式会社 光半導体集積素子及びその製造方法
US9268089B2 (en) * 2011-04-21 2016-02-23 Octrolix Bv Layer having a non-linear taper and method of fabrication
EP2732320B1 (en) * 2011-07-13 2016-08-31 Innolume GmbH Adiabatic mode-profile conversion by selective oxidation for photonic integrated circuit
US9185404B2 (en) * 2011-10-07 2015-11-10 Qualcomm Incorporated Performing transform dependent de-blocking filtering
US8995800B2 (en) 2012-07-06 2015-03-31 Teledyne Scientific & Imaging, Llc Method of fabricating silicon waveguides with embedded active circuitry
US9020317B2 (en) 2012-10-11 2015-04-28 Octrolix Bv Surface waveguide having a tapered region and method of forming
US9221074B2 (en) 2012-10-11 2015-12-29 Octrolix Bv Stress-tuned planar lightwave circuit and method therefor
US9922887B2 (en) 2012-12-11 2018-03-20 Acacia Communications, Inc. Wafer-scale testing of photonic integrated circuits using horizontal spot-size converters
JP2016024438A (ja) * 2014-07-24 2016-02-08 住友電気工業株式会社 半導体光素子
JP6394285B2 (ja) * 2014-10-31 2018-09-26 富士通株式会社 光導波路、スポットサイズ変換器及び光装置
US20210003777A1 (en) * 2019-01-23 2021-01-07 Teramount Ltd. Waveguide mode coupling
US20230296853A9 (en) 2015-10-08 2023-09-21 Teramount Ltd. Optical Coupling
JP6730801B2 (ja) * 2015-12-03 2020-07-29 新光電気工業株式会社 光導波路の製造方法
JP2017134348A (ja) * 2016-01-29 2017-08-03 ソニー株式会社 光導波シート、光伝送モジュール及び光導波シートの製造方法
JP6387373B2 (ja) * 2016-06-24 2018-09-05 株式会社フジクラ 微小光回路および光モード変換器
JP6872329B2 (ja) * 2016-09-07 2021-05-19 富士通株式会社 光ファイバ搭載光集積回路装置
US10054740B2 (en) * 2016-12-29 2018-08-21 Intel Corporation Waveguide transition structure and fabrication method
CN107329208B (zh) * 2017-07-10 2023-05-09 熠谱(上海)半导体制造有限公司 一种折射率梯度变化的硅光子模斑转换器
JP6805111B2 (ja) * 2017-11-07 2020-12-23 日本電信電話株式会社 オンウェハ光特性検査用回路および検査方法
US10473858B1 (en) * 2019-02-08 2019-11-12 Finisar Corporation Waveguide routing configurations and methods
JP7306125B2 (ja) * 2019-07-18 2023-07-11 住友電気工業株式会社 スポットサイズ変換器およびその製造方法
WO2021178727A1 (en) * 2020-03-04 2021-09-10 The Regents Of The University Of California Evanescent coupler mode converters
GB2601842B (en) * 2020-06-09 2023-01-18 Rockley Photonics Ltd Optoelectronic device and method of manufacture thereof
GB2596060A (en) * 2020-06-09 2021-12-22 Rockley Photonics Ltd Optoelectronic device and method of manufacture thereof

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JP2005070557A (ja) * 2003-08-26 2005-03-17 Matsushita Electric Works Ltd スポットサイズ変換器およびその製造方法

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JP3976514B2 (ja) 2001-04-05 2007-09-19 日本電気株式会社 光導波路の製造方法
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JP2004151700A (ja) * 2002-10-07 2004-05-27 Nippon Telegr & Teleph Corp <Ntt> 平面回路型光学素子およびその製造方法
JP2005070557A (ja) * 2003-08-26 2005-03-17 Matsushita Electric Works Ltd スポットサイズ変換器およびその製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010250112A (ja) * 2009-04-16 2010-11-04 Fujitsu Ltd 光導波路の製造方法
JP2011197453A (ja) * 2010-03-19 2011-10-06 Furukawa Electric Co Ltd:The 半導体光導波路素子、半導体光導波路アレイ素子、およびその製造方法
US9810846B2 (en) 2010-10-14 2017-11-07 Huawei Technologies Co., Ltd. Coupling methods and systems using a taper
US9869815B2 (en) 2013-09-20 2018-01-16 Oki Electric Industry Co., Ltd. Optical device having a stepwise or tapered light input/output part and manufacturing method therefor
US9335475B2 (en) 2013-09-20 2016-05-10 Oki Electric Industry Co., Ltd. Method of manufacturing an optical device having a stepwise or tapered light input/output part
US10263392B2 (en) 2014-03-07 2019-04-16 Nec Corporation Optical waveguide, and optical component and variable wavelength laser which use the same
US9899799B2 (en) 2014-03-07 2018-02-20 Nec Corporation Optical waveguide, and optical component and variable wavelength laser which use the same
US9435949B2 (en) 2014-03-25 2016-09-06 Nec Corporation Optical integrated circuit and manufacturing method thereof
JP5759039B1 (ja) * 2014-03-31 2015-08-05 日本電信電話株式会社 光結合構造
CN106164723A (zh) * 2014-04-08 2016-11-23 华为技术有限公司 使用绝热锥形波导的边缘耦合
JPWO2017135436A1 (ja) * 2016-02-04 2018-11-29 古河電気工業株式会社 光素子及びその製造方法、並びに光変調器
WO2018179752A1 (ja) * 2017-03-30 2018-10-04 旭化成エレクトロニクス株式会社 光導波路、光学式濃度測定装置および光導波路の製造方法
JP6420932B1 (ja) * 2017-03-30 2018-11-07 旭化成エレクトロニクス株式会社 光学式濃度測定装置および光学式濃度測定装置の製造方法
US11353399B2 (en) 2017-03-30 2022-06-07 Asahi Kasel Microdevices Corporation Optical waveguide, optical concentration measuring device, and method for manufacturing optical waveguide
CN108983352A (zh) * 2018-08-29 2018-12-11 南通赛勒光电科技有限公司 一种端面耦合器及其制备方法
WO2022254701A1 (ja) * 2021-06-04 2022-12-08 日本電信電話株式会社 光導波回路およびその製造方法
WO2023243014A1 (ja) * 2022-06-15 2023-12-21 日本電信電話株式会社 光導波路接続構造

Also Published As

Publication number Publication date
US20100086255A1 (en) 2010-04-08
JP5413810B2 (ja) 2014-02-12
US8126301B2 (en) 2012-02-28
JPWO2008111447A1 (ja) 2010-06-24

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