WO2008108326A1 - 光半導体用熱硬化性組成物、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材、光半導体素子用封止剤及び光半導体素子 - Google Patents

光半導体用熱硬化性組成物、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材、光半導体素子用封止剤及び光半導体素子 Download PDF

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Publication number
WO2008108326A1
WO2008108326A1 PCT/JP2008/053749 JP2008053749W WO2008108326A1 WO 2008108326 A1 WO2008108326 A1 WO 2008108326A1 JP 2008053749 W JP2008053749 W JP 2008053749W WO 2008108326 A1 WO2008108326 A1 WO 2008108326A1
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WIPO (PCT)
Prior art keywords
optical semiconductor
semiconductor device
thermosetting composition
die
optical
Prior art date
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PCT/JP2008/053749
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English (en)
French (fr)
Inventor
Takashi Nishimura
Takashi Watanabe
Mitsuru Tanikawa
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Sekisui Chemical Co., Ltd.
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Priority to JP2008531476A priority Critical patent/JPWO2008108326A1/ja
Publication of WO2008108326A1 publication Critical patent/WO2008108326A1/ja

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    • H—ELECTRICITY
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
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  • Die Bonding (AREA)
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Abstract

本発明は、優れた透明性を有し、耐熱性、耐光性、及び、ハウジング材への密着性に優れ、使用条件下において黄変等の問題が生じることのない光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材、及び、これらを用いてなる光半導体素子を提供することを目的とする。 本発明は、分子内に環状エーテル含有基を有するシリコーン樹脂、前記環状エーテル含有基と反応する熱硬化剤、リン系化合物及びフェノール系化合物を含有する光半導体用熱硬化性組成物であって、前記リン系化合物は、ホスファイト骨格又はホスホナイト骨格を有し、前記フェノール系化合物は、少なくとも第２位にアルキル基を有する置換フェノール誘導体である光半導体用熱硬化性組成物である。
PCT/JP2008/053749 2007-03-05 2008-03-03 光半導体用熱硬化性組成物、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材、光半導体素子用封止剤及び光半導体素子 WO2008108326A1 (ja)

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JP2008531476A JPWO2008108326A1 (ja) 2007-03-05 2008-03-03 光半導体用熱硬化性組成物、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材、光半導体素子用封止剤及び光半導体素子

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JP2007054031 2007-03-05
JP2007-054031 2007-03-05

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101582480B (zh) * 2009-05-08 2011-06-22 华灿光电股份有限公司 带热沉的led芯片及其制造方法
CN103087472A (zh) * 2009-03-31 2013-05-08 日立化成工业株式会社 电子部件用液体状树脂组合物及电子部件装置
JP2015078256A (ja) * 2013-10-15 2015-04-23 信越化学工業株式会社 加熱硬化型導電性シリコーン組成物、該組成物からなる導電性接着剤、該組成物からなる導電性ダイボンド材、該ダイボンド材の硬化物を有する光半導体装置。
JP2016050301A (ja) * 2014-08-28 2016-04-11 スリーボンドファインケミカル株式会社 熱伝導性樹脂組成物
CN108192293A (zh) * 2009-03-31 2018-06-22 日立化成工业株式会社 电子部件用液体状树脂组合物及电子部件装置
WO2022138344A1 (ja) * 2020-12-25 2022-06-30 ダウ・東レ株式会社 硬化性シリコーン組成物、その硬化物および積層体

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JP2002012743A (ja) * 2000-06-28 2002-01-15 Sumitomo Bakelite Co Ltd 光半導体封止用エポキシ樹脂組成物及びその硬化物にて封止された光半導体装置
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