WO2008102900A1 - パッケージ型圧電振動子及びパッケージ型圧電振動子の製造方法 - Google Patents

パッケージ型圧電振動子及びパッケージ型圧電振動子の製造方法 Download PDF

Info

Publication number
WO2008102900A1
WO2008102900A1 PCT/JP2008/053126 JP2008053126W WO2008102900A1 WO 2008102900 A1 WO2008102900 A1 WO 2008102900A1 JP 2008053126 W JP2008053126 W JP 2008053126W WO 2008102900 A1 WO2008102900 A1 WO 2008102900A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
base body
wafer
piezoelectric vibrator
type piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053126
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Takehiro Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Priority to US12/449,533 priority Critical patent/US8179023B2/en
Publication of WO2008102900A1 publication Critical patent/WO2008102900A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/0595Holders or supports the holder support and resonator being formed in one body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

Definitions

  • the present invention relates to a package-type piezoelectric vibrator in which a vibrating portion is provided in a space hermetically sealed by a lid and a base body, and a manufacturing method thereof.
  • a conventional packaged crystal unit has a package 10 consisting of a ceramic base body 12 and a metal lid body 13 on both main surfaces as shown in FIG. , 2b are stored in the same pattern.
  • the base body 12 and the lid body 13 are seam welded via, for example, a seal material made of a welding material, and the inside is in a vacuum state.
  • a crystal wafer comprising a plurality of rectangular crystal vibrating pieces 11 arranged in the vertical and horizontal directions is prepared. Subsequently, the crystal wafer is cut and divided by dicing or the like along the outline of the crystal vibrating piece 11 to obtain individual pieces. The separated crystal vibrating pieces 11 are placed one by one through a conductive adhesive 15 in a plurality of recesses formed on the surface of the ceramic base. After all of the quartz crystal resonator element 11 is placed on the ceramic base, the lid body 16 is pasted on the ceramic base via a sealing material, and the sealing material portion is heated to adhere to the surface of the ceramic base. Secure the lid 1 6. Thereafter, the laminated body is cut by dicing or the like along a partition line formed on the surface of the laminated body, whereby the package type crystal resonator shown in FIG. 7 is completed.
  • the crystal resonator element 11 is placed in the recess of the ceramic base. Since it is placed one by one, it takes a long time to place all the crystal resonator elements 11 on the ceramic base, resulting in poor manufacturing efficiency. In addition, it is difficult to transport the small crystal resonator element 11. In other words, it is not suitable for mass production of packaged crystal units.
  • the base body 12 and the lid body 13 are different materials, when the lid body 13 is sealed (joined) to the base body 1 2, the base body 12 and the lid body are different due to the difference in thermal expansion coefficient. In some cases, distortion occurs between 1 and 3 to reduce the bonding strength, and high airtightness cannot be obtained. Further, as shown in FIG. 7, the quartz resonator element 11 is fixed to the surface of the base 1 6 of the base body 1 2 by the conductive adhesive 15 as shown in FIG. When the degassing fills the package 10, the characteristics of the crystal resonator element 11 are fluctuated and deteriorated.
  • Patent Document 1 is an appropriate technique for mass production of packaged crystal units, it is important to know how to draw out and seal the electrodes that connect the elements and external terminals in actual mass-produced products. Is not considered at all.
  • Patent Document 2 describes that a crystal resonator is hermetically sealed as follows. First, excitation electrodes are formed on the front and back surfaces of a diaphragm having a tongue-like vibration part, and lead electrodes are drawn out from these excitation electrodes through the root part of the vibration part. One of these lead electrodes forms the first connection, and the other lead electrode A second connecting portion is formed after penetrating on one lead electrode side, and a first cover made of quartz crystal having a through hole provided on one surface of the diaphragm is joined. The first and second connection portions are electrically connected to a conduction electrode formed on the inner surface of the through hole via a through hole provided in the first cover.
  • a second force bar made of crystal is joined to the other surface of the diaphragm to form a package, and a sealing electrode is formed so as to cover the conductive electrode formed on the inner surface of the through hole of the first cover. Seal hermetically.
  • the vibration plate is thickened at the portion sandwiched between the first cover and the second cover, and the portions where the vibration portion and the lead electrode are formed are thinned by etching.
  • the diaphragm and the first force bar or the second force depend on the thickness of the lead electrode formed on the surface of the diaphragm. There is no gap between the par. That is, by forming the diaphragm in this way, high airtightness of the packaged crystal unit is achieved.
  • the thickness of the sandwiched portion between the first cover and the second cover in the vibration plate is increased in manufacturing the package type crystal resonator, and the vibration part and the lead electrode are formed.
  • Patent Document 2
  • JP-A-8-3 3 5 8 3 9 (paragraphs 0 0 1 2, FIG. 2, FIG. 3 and FIG. 6)
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a package type piezoelectric vibrator suitable for mass production and a method for manufacturing the same, which can be packaged at a wafer stage. is there. [0 0 1 1]
  • the present invention relates to a package type piezoelectric vibrator in which a vibration part is provided in a space hermetically sealed by a lid and a base body.
  • a piezoelectric substrate in which a vibrating portion and a frame portion surrounding the vibrating portion via a gap are integrally formed via a support portion;
  • One excitation electrode and the other excitation electrode respectively formed on one side and the other side of the vibration unit;
  • One extraction electrode connected to the one excitation electrode, and extracted from the one surface side of the vibration portion to the frame portion on the other surface side of the piezoelectric substrate via the support portion;
  • the other extraction electrode connected to the other excitation electrode and drawn out to the frame portion on the other surface side of the piezoelectric substrate through the support portion;
  • a lid having a concave portion for accommodating the vibration portion and the support portion
  • a space in which the vibration part is located is hermetically sealed by interposing an extraction electrode closely between the step surface and the lower surface of the frame part of the quartz substrate.
  • the piezoelectric substrate, the lid body, and the base body are made of quartz. Further, it is preferable that a conductive member is embedded in the through hole. Further, the external electrode is preferably provided on the outer surface of the base body.
  • the vibration part and a frame part forming region that becomes a frame part surrounding the vibration part via a gap serve as the support part.
  • the lid Forming a large number of regions on the second wafer corresponding to the arrangement pattern of the substrate regions of the first wafer, the lid having a recess for accommodating the vibrating portion and the support portion;
  • a third wafer is formed with a plurality of regions serving as a base body having recesses for accommodating the vibration part and the support part in an array pattern corresponding to the substrate area of the first wafer, and the recesses of the base body A stepped surface formed in a region opposite to the one and the other extraction electrodes at a region that becomes a frame portion that surrounds the substrate, and lower than the upper surface of the region that becomes the frame portion by the thickness of the extraction electrode; A step of forming a through-hole that opens to the outer surface of the base body at a position that does not communicate with the space in the recess of the base body on the stepped surface, a vibrating portion of the second wafer, a recess of the first wafer, and A step of superimposing the second wafer and the third wafer on the upper surface and the lower surface of the first wafer, respectively, in a state where the concave portions of the third wafer are aligned with the corresponding positions;
  • a lead-out electrode for electrically connecting the extraction electrode and the external electrode is formed in the through hole of the third wafer, and on the surface opposite to the concave portion in the third wafer, A step of forming an external electrode of each package-type piezoelectric vibrator; and a step of cutting the wafer laminate and dividing it into each package-type piezoelectric vibrator after this step.
  • the package type piezoelectric vibrator of the present invention can be packaged at the wafer stage, it is suitable for mass production.
  • the package-type piezoelectric vibrator is interposed between the stepped surface and the lower surface of the frame portion of the piezoelectric substrate when the base body is bonded to the lower surface side of the piezoelectric substrate.
  • the space is sealed airtight. Therefore, it is possible to easily hermetically seal the piezoelectric substrate simply by bonding the lid to the upper surface side of the piezoelectric substrate and bonding the base body to the lower surface side of the piezoelectric substrate, thus avoiding complicated manufacturing processes. It is done. Brief Description of Drawings
  • FIG. 1 is a schematic cross-sectional view showing a packaged crystal resonator of the present invention.
  • FIG. 2 is an enlarged view of a main part showing the packaged crystal resonator of the present invention.
  • FIG. 3 is a schematic perspective view showing the packaged crystal resonator of the present invention.
  • FIG. 4 is a schematic perspective view showing the package type crystal resonator of the present invention.
  • FIG. 5 is a schematic perspective view showing a state in which the lid, the quartz substrate, and the case body are overlaid.
  • FIG. 6 is a schematic plan view showing a state in which the substrate is cut into one package type crystal resonator.
  • FIG. 7 is a schematic cross-sectional view showing a conventional packaged crystal resonator.
  • FIG. 8 is a schematic plan view showing a crystal vibrating piece. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIGS. Fig. 1 shows the cross section of the lid 5 taken along the line A-A 'in Fig. 3, the cross section taken along the line B-B, the crystal substrate 3 and the base body 6 taken along the line C-C. It is the schematic which shows the cross section cut off.
  • reference numeral 3 denotes a rectangular crystal substrate.
  • the crystal substrate 3 includes a frame portion 31 and a vibrating portion 32 located inside the frame portion 31 with a space interposed therebetween.
  • the frame portion 31 and the vibrating portion 3 2 are integrated with each other through two support portions 3 3 a and 3 3 b that are arranged at one end side of the quartz substrate 3 at intervals in the width direction. Is formed.
  • One excitation electrode 4a and the other excitation electrode 4b are formed on one surface side and the other surface side of the vibration part 32, respectively.
  • one end side of one extraction electrode 41a is formed on one surface side of the vibrating portion 32 so as to be connected to the one excitation electrode 4a.
  • the extraction electrode 41 a is drawn from the excitation electrode 4 a in a strip shape to one edge side of the vibration part 32, and further bent along the end surface of the vibration part 32, and the other surface of the vibration part 32 And is pulled out to the frame portion 31 on the other surface side of the crystal substrate 3 through the support portion 33a.
  • one end side of the other extraction electrode 41b is connected to the other excitation electrode 4b.
  • this extraction electrode 41b is drawn from the excitation electrode 4b in a strip shape to one edge side of the vibration part 32, and further to the frame part 31 on the other surface side of the quartz substrate 3 through the support part 33b. It is drawn out and formed.
  • the excitation electrodes 4a and 4b and the extraction electrodes 41a and 41b are formed by vapor deposition or sputtering of a laminated film having a Cr film as a lower layer and an Au film as an upper layer.
  • a lid 5 made of a rectangular crystal having a recess 51 for accommodating the vibrating portion 32 and the support portions 33a and 33b is provided on the upper side of the quartz substrate 3.
  • the lid 5 is joined to the frame portion 31 on the one surface side of the crystal substrate 3 by solder such as AuSi, AuS, or AuGe.
  • a base body 6 made of a rectangular crystal having a recess 61 for accommodating the vibrating portion 32 and the support portions 33a and 33b is provided on the lower side of the quartz substrate 3.
  • a base body 6 made of a rectangular crystal having a recess 61 for accommodating the vibrating portion 32 and the support portions 33a and 33b is provided on one edge side of the recess 61 in the base body 6, as shown in FIG. 3, one extraction electrode 41a and the other extraction electrode 41b formed on the frame portion 31 on the other surface side of the crystal substrate 3 are provided.
  • Recessed receiving portions 62a and 62b are formed so as to be received.
  • the upper surface on one end side of the base body 6 is formed as a stepped surface with regions corresponding to the extraction electrodes 41 a and 41 b being lowered by the film thickness of the extraction electrodes 41 a and 41 b.
  • This step surface corresponds to the bottom surface of the receiving portions 62a and 62b.
  • this base body 6 is bonded to the frame 31 on the other surface side of the quartz substrate 3 by soldering such as Au Si, Au S, AuGe, etc., so that the extraction electrode 41 a is placed in the receiving portion 62 a as shown in FIG. Force The extraction electrode 41b is received in the receiving portion 62b.
  • the depths of the receiving parts 62a and 62b are set to be the same as the thicknesses of the extraction electrodes 4la and 4lb.
  • the receiving portions 62a and 62b are formed with through holes 63a and 63b penetrating in the thickness direction of the base body 6, respectively.
  • lead-out electrodes 7a and 7b are formed on the inner peripheral surfaces of the through holes 63a and 63b.
  • the lead electrodes 7a and 7b are formed by vapor deposition or sputtering of a laminated film having a Cr film as a lower layer and an Au film as an upper layer. As a result, as shown in FIGS.
  • lead-out electrodes 7a and 7b are formed on one lead-out electrode 41a and the other lead-out electrode 41b formed on the frame 31 on the other surface side of the quartz crystal substrate 3, respectively. Each is electrically connected.
  • the lead-out electrodes 7 a, 71 ⁇ are formed by being drawn out to the outer bottom surface of the base body 6 through the inner wall surfaces of the through holes 633, 63 b, and are formed on the outer bottom surface of the base body 6.
  • the lead electrodes 7a and 7b are electrically connected to electrode pads 8a and 8b described later.
  • the lead-out electrodes 7a and 713 can be formed by extending to the lower end portions of the through holes 63 & and 63b, and the lead-out electrodes 7a and 7b formed at the lower end portions of the through holes 63a and 63b will be described later. You may make it electrically connect with electrode pad 8a, 8b.
  • the through holes 63 a and 63 b are formed at positions that do not communicate with the space surrounded by the recess 61 when the quartz substrate 3 is placed on the base body 6, and accordingly, the through holes in the receiving portions 62 a and 62 b are formed.
  • the upper surfaces (step surfaces) of the portions where the holes 63 a and 63 b are formed serve as a sealing surface that tightly contacts the extraction electrodes 41 a and 41 b and hermetically seals the space of the recess 61.
  • the depths of the receiving portions 6 2 a and 6 2 b are set to be the same as the thicknesses of the extraction electrodes 4 1 a and 41 b, but the receiving portions 6 2 a and 6 2 b
  • the depth of may be set slightly smaller than the thickness of the extraction electrodes 41a and 41b.
  • the extraction electrodes 4 1 a and 4 1 b protruding from the upper surfaces of the receiving portions 6 2 a and 6 2 b are crushed and spread by the stress applied when the quartz substrate 3 is bonded to the base body 6. Adhesion with the base body 6 increases.
  • electrode pads 8 a and 8 b as external electrodes are formed on the outer bottom surface of the base body 6 so as to cover the through holes 6 3 a and 6 3 b as shown in FIG.
  • the lead electrodes 7 a and 7 b formed on the outer bottom surface of the base body 6 are electrically connected to each other.
  • FIG. 5 In the case of manufacturing the above-described package-type crystal resonator, as shown in FIG. 5, three wafers are used: an element wafer 91, a base wafer 92, and a lid wafer 93. On the element wafer 91, the vibrating portion 3 2 and the two supporting portions 3 3 a and 3 3 b supporting the vibrating portion 3 2 are formed in a matrix shape by etching or the like. . Excitation electrodes 4 a and 4 b are formed on both main surfaces of each vibration part 32 by vapor deposition or sputtering.
  • an extraction electrode 4 1 a is provided on the other surface side of each support portion 3 3 a and the other surface side of the vibrating arm portion 3 2, and the other surface side of each support portion 3 3 and the other surface side of the vibrating arm portion 3 2.
  • Each has an extraction electrode of 4 lb.
  • the base wafer 92 has recesses 61 aligned in a matrix by etching or the like.
  • a concave receiving portion 6 2 a, 6 2 for receiving extraction electrodes 4 1 a and 4 1 b formed on the other surface side of the wafer 91 for the element is formed on one edge side of each concave portion 61 by etching or the like. b is formed respectively.
  • Each receiving part 6 2 a, 6 2 b The through holes 63a and 63b are respectively formed by etching or the like.
  • the lid wafer 93 is formed with recesses 51 arranged in a matrix by etching or the like.
  • solder such as Au Si, Au S, or AuGe is vapor-deposited on the surface of the base wafer 92 in a region other than where the recess 61 is formed on the surface of the base wafer 92.
  • an element wafer 91 is bonded to the surface of the base wafer 92 in a vacuum atmosphere, and the vibration part 32 and the support parts 33 a and 33 b formed on the element wafer 91 are used for the base.
  • Each is accommodated in a recess 61 formed in the wafer 92, and the extraction electrodes 41a and 42b formed on the other surface side of the element wafer 91 are received in the receiving portion 62 formed in the base wafer 92.
  • the solder portion is heated by a laser to melt the solder, thereby bonding the element wafer 91 to the surface of the base wafer 92.
  • solder such as Au Si, AuS, and AuGe is vapor-deposited on the surface of the element wafer 91 in a region other than where the vibration part 32 and the support parts 33 a and 33 b are formed.
  • the lid wafer 93 is bonded to the surface of the element wafer 91 in a vacuum atmosphere, and the vibrating portion 32 and the support portions 33a and 33b formed on the element wafer are bonded to the lid wafer 93.
  • Each is stored in the formed recess 51.
  • the solder portion is heated by a laser to melt the solder, thereby bonding the lid wafer 93 to the surface of the element wafer 91.
  • lead electrodes 7 a and 7 b are formed on the inner peripheral surfaces of the through holes 63 a and 63 b formed in the base wafer 92 by sputtering, and the lead electrodes 7 a and 7 b and the receiving portion 62 are formed.
  • the extraction electrodes 41 a and 41 b that are in close contact with the upper surface of the portion where the through holes 63 a and 63 b are formed in a and 62 b are electrically connected.
  • electrode pads 8a and 8b are respectively formed on the outer bottom surface of the base wafer 92 so as to cover the entire through holes 63a and 63b. Thereafter, as shown in FIG.
  • the surface of the lid wafer 93 is covered with a dicing tape 94, and the dicing tape 94 Cut along the dicing line 95 from above with a dicing saw (not shown).
  • a dicing saw not shown
  • the package-type crystal resonator which is a mass-produced product, has a receiving portion 62 a, which receives one extraction electrode 4 a and the other extraction electrode 4 b formed on the frame portion 31 on the other surface side of the crystal substrate 3. 62 b is formed on the base body 6 respectively.
  • the receiving parts 6 2 a, 6 2 b and the crystal substrate 3 are interposed in close contact with the frame portion 31 on the surface side, and the space of the recess 61 is hermetically sealed. Therefore, the lid 5 is bonded to one side of the quartz substrate 3, and the base body 6 is bonded to the other side of the quartz substrate 3, so that the excitation electrodes 4a and 4b and the extraction electrode 4 1 are formed on the surface.
  • the quartz substrate 3 on which a and 4 1 b are formed can be easily hermetically sealed, and the manufacturing process is not complicated.
  • an insulating member such as a low melting glass or a conductive member such as a metal is inserted in the through holes 63a and 63b formed in the receiving portions 62a and 62b of the base body 6. May be embedded.
  • This insulating member or conductive member is embedded in the through holes 63 a and 63 b after the lead-out electrodes 7 a and 7 b are formed on the inner peripheral surfaces of the through holes 6 3 a and 63 b.
  • electrode pads 8a, 81? Are provided on the outer surface of the base body so as to cover the entire through holes 633, 6 3b.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
PCT/JP2008/053126 2007-02-20 2008-02-19 パッケージ型圧電振動子及びパッケージ型圧電振動子の製造方法 Ceased WO2008102900A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/449,533 US8179023B2 (en) 2007-02-20 2008-02-19 Package-type piezoelectric resonator and method of manufacturing package-type piezoelectric resonator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-039760 2007-02-20
JP2007039760 2007-02-20

Publications (1)

Publication Number Publication Date
WO2008102900A1 true WO2008102900A1 (ja) 2008-08-28

Family

ID=39710170

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053126 Ceased WO2008102900A1 (ja) 2007-02-20 2008-02-19 パッケージ型圧電振動子及びパッケージ型圧電振動子の製造方法

Country Status (3)

Country Link
US (1) US8179023B2 (enExample)
JP (1) JP4707725B2 (enExample)
WO (1) WO2008102900A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011071488A (ja) * 2009-08-31 2011-04-07 Taiheiyo Cement Corp 圧電アクチュエータユニットおよびその製造方法
US20110187472A1 (en) * 2010-02-03 2011-08-04 Fukuda Junya Piezoelectric vibrating reed, piezoelectric vibrator, method for manufacturing piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5277866B2 (ja) * 2008-10-29 2013-08-28 セイコーエプソン株式会社 圧電振動片、および圧電デバイス
JP5239784B2 (ja) * 2008-11-28 2013-07-17 株式会社大真空 圧電振動デバイス
JP5370371B2 (ja) * 2008-12-24 2013-12-18 株式会社大真空 圧電振動デバイスの製造方法、および圧電振動デバイスを構成する構成部材のエッチング方法
CN102273071A (zh) 2009-01-07 2011-12-07 株式会社大真空 压电振动设备的制造方法
JP2011199672A (ja) * 2010-03-19 2011-10-06 Seiko Instruments Inc ガラス基板の接合方法、ガラス接合体、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計
JP5325151B2 (ja) * 2010-03-31 2013-10-23 日本電波工業株式会社 水晶デバイス、及びその製造方法
US9985198B1 (en) 2010-06-15 2018-05-29 Hrl Laboratories, Llc High Q quartz-based MEMS resonators and methods of fabricating same
US10141906B1 (en) * 2010-06-15 2018-11-27 Hrl Laboratories, Llc High Q quartz-based MEMS resonators and method of fabricating same
JP2012186709A (ja) * 2011-03-07 2012-09-27 Nippon Dempa Kogyo Co Ltd 圧電振動片及び圧電デバイス
JP5788728B2 (ja) * 2011-07-21 2015-10-07 日本電波工業株式会社 圧電振動片、圧電デバイス、及び圧電デバイスの製造方法
JP2013219540A (ja) * 2012-04-09 2013-10-24 Nippon Dempa Kogyo Co Ltd 圧電デバイス
JP6017189B2 (ja) * 2012-06-12 2016-10-26 日本電波工業株式会社 圧電振動片及び圧電デバイス
JP6167494B2 (ja) * 2012-09-26 2017-07-26 セイコーエプソン株式会社 電子デバイス用容器の製造方法、電子デバイスの製造方法、電子デバイス、電子機器及び移動体機器
US9083263B2 (en) * 2012-12-13 2015-07-14 Schlumberger Technology Corporation Apparatus to provide a time reference
JP6135296B2 (ja) * 2013-05-20 2017-05-31 富士通株式会社 パッケージ構造及びパッケージ構造を基板に接合する方法
KR102029501B1 (ko) 2014-11-24 2019-10-07 삼성전기주식회사 수정진동자 패키지
KR102105391B1 (ko) 2014-12-23 2020-04-28 삼성전기주식회사 수정진동자 패키지
JP6573462B2 (ja) * 2015-03-09 2019-09-11 リバーエレテック株式会社 水晶振動子
CN115296640A (zh) * 2022-10-08 2022-11-04 深圳新声半导体有限公司 一种微机电声波谐振器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209799A (ja) * 1997-01-24 1998-08-07 Matsushita Electric Ind Co Ltd 振動子
JPH10209795A (ja) * 1997-01-17 1998-08-07 Matsushita Electric Ind Co Ltd 振動子及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639631A (en) * 1985-07-01 1987-01-27 Motorola, Inc. Electrostatically sealed piezoelectric device
DE69429848T2 (de) * 1993-11-01 2002-09-26 Matsushita Electric Industrial Co., Ltd. Elektronische Anordnung und Verfahren zur Herstellung
JPH08335839A (ja) 1995-06-07 1996-12-17 Matsushita Electric Ind Co Ltd 振動子の製造方法
DE19649332C1 (de) * 1996-11-28 1998-01-22 Tele Quarz Gmbh Resonator mit Kristall
JP3390348B2 (ja) 1998-08-21 2003-03-24 セイコーインスツルメンツ株式会社 水晶振動子およびその製造方法
JP2006180168A (ja) 2004-12-22 2006-07-06 Kyocera Kinseki Corp 水晶振動子パッケージ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209795A (ja) * 1997-01-17 1998-08-07 Matsushita Electric Ind Co Ltd 振動子及びその製造方法
JPH10209799A (ja) * 1997-01-24 1998-08-07 Matsushita Electric Ind Co Ltd 振動子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011071488A (ja) * 2009-08-31 2011-04-07 Taiheiyo Cement Corp 圧電アクチュエータユニットおよびその製造方法
US20110187472A1 (en) * 2010-02-03 2011-08-04 Fukuda Junya Piezoelectric vibrating reed, piezoelectric vibrator, method for manufacturing piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece

Also Published As

Publication number Publication date
JP4707725B2 (ja) 2011-06-22
JP2008236741A (ja) 2008-10-02
US8179023B2 (en) 2012-05-15
US20100117489A1 (en) 2010-05-13

Similar Documents

Publication Publication Date Title
JP4707725B2 (ja) パッケージ型圧電振動子及びパッケージ型圧電振動子の製造方法
JP4588753B2 (ja) 電子素子パッケージの製造方法および電子素子パッケージ
CN101816125B (zh) 水晶装置及水晶装置的制造方法
JP5538974B2 (ja) 電子デバイスパッケージの製造方法及び電子デバイスパッケージ
JP3887137B2 (ja) 圧電振動子の製造方法
CN102124648A (zh) 压电装置及其制造方法
JP2011045041A (ja) 表面実装用の水晶振動子
US20200391999A1 (en) Mems device and method for manufacturing mems device
JP3390348B2 (ja) 水晶振動子およびその製造方法
JP2019211229A (ja) 温度センサ、及びこれを備えた圧電振動デバイス
JP2006339896A (ja) 圧電振動子の製造方法及び圧電振動子
JP5251224B2 (ja) 圧電振動デバイスの製造方法および圧電振動デバイス
JP5152012B2 (ja) 圧電振動デバイスおよび圧電振動デバイスの製造方法
JP2007013636A (ja) 圧電振動子の製造方法及び圧電振動子
JP2007005948A (ja) 電子部品及びその製造方法
JP2008205761A (ja) 圧電振動デバイス
JP2007096777A (ja) 圧電振動子の製造方法
JP6429266B2 (ja) 電子部品装置
JP2010103600A (ja) 振動子およびその製造方法
JP5823759B2 (ja) 電子デバイスパッケージの製造方法、電子デバイスパッケージ及び発振器
JP2005353885A (ja) 電子デバイスの製造方法
JPH10303690A (ja) 表面弾性波装置及びその製造方法
JP4799211B2 (ja) 蓋体およびそれを用いた電子装置
JP4144036B2 (ja) 電子部品用パッケージ及び当該電子部品用パッケージを用いた圧電振動デバイス
JP2007013608A (ja) 圧電振動子の製造方法及び圧電振動子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08711890

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12449533

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08711890

Country of ref document: EP

Kind code of ref document: A1