WO2008102498A1 - 磁性体装置及び磁気記憶装置 - Google Patents

磁性体装置及び磁気記憶装置 Download PDF

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Publication number
WO2008102498A1
WO2008102498A1 PCT/JP2007/073354 JP2007073354W WO2008102498A1 WO 2008102498 A1 WO2008102498 A1 WO 2008102498A1 JP 2007073354 W JP2007073354 W JP 2007073354W WO 2008102498 A1 WO2008102498 A1 WO 2008102498A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
function body
pin layer
layers
nonmagnetic conductor
Prior art date
Application number
PCT/JP2007/073354
Other languages
English (en)
French (fr)
Inventor
Yuukou Katou
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009500064A priority Critical patent/JPWO2008102498A1/ja
Priority to US12/528,393 priority patent/US8675399B2/en
Publication of WO2008102498A1 publication Critical patent/WO2008102498A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)

Abstract

　磁性体装置は、磁性体ピン層２０と第１機能体４と第２機能体５とを具備する。磁性体ピン層２０は、磁化方向が固定されている。第１機能体４は、磁性体ピン層２０に接し、磁性体ピン層２０と共に機能を具現する。第２機能体５は、磁性体ピン層２０に接している。第２機能体５は、非磁性の導電体又は絶縁体、及び機能体のいずれかである。磁性体ピン層２０は、複数の磁性体層２と、それらの間に設けられた非磁性導電体層３、１１とを備える。非磁性導電体層３、１１が両側の磁性体層２同士を強磁性結合又は反強磁性結合させる。複数の磁性体層２の磁化量の総和がほぼゼロである。複数の磁性体層２のうち、第１方向と第２方向の磁性体層群の異方性磁界の大きさが異なる。
PCT/JP2007/073354 2007-02-23 2007-12-04 磁性体装置及び磁気記憶装置 WO2008102498A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009500064A JPWO2008102498A1 (ja) 2007-02-23 2007-12-04 磁性体装置及び磁気記憶装置
US12/528,393 US8675399B2 (en) 2007-02-23 2007-12-04 Magnetic unit and magnetic storage device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-044701 2007-02-23
JP2007044701 2007-02-23

Publications (1)

Publication Number Publication Date
WO2008102498A1 true WO2008102498A1 (ja) 2008-08-28

Family

ID=39709780

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073354 WO2008102498A1 (ja) 2007-02-23 2007-12-04 磁性体装置及び磁気記憶装置

Country Status (3)

Country Link
US (1) US8675399B2 (ja)
JP (1) JPWO2008102498A1 (ja)
WO (1) WO2008102498A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101684915B1 (ko) * 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002084019A (ja) * 2000-09-08 2002-03-22 Canon Inc 磁気デバイス及び固体磁気メモリ
JP2004193595A (ja) * 2002-11-26 2004-07-08 Toshiba Corp 磁気セル及び磁気メモリ
JP2005044490A (ja) * 2003-04-18 2005-02-17 Alps Electric Co Ltd Ｃｐｐ型巨大磁気抵抗効果ヘッド
WO2005098953A1 (ja) * 2004-03-31 2005-10-20 Nec Corporation 磁化方向制御方法、及びそれを応用したｍｒａｍ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020055190A1 (en) 2000-01-27 2002-05-09 Anthony Thomas C. Magnetic memory with structures that prevent disruptions to magnetization in sense layer
JP2001267522A (ja) 2000-03-23 2001-09-28 Sharp Corp 磁気メモリ素子及び磁気メモリ
EP1187103A3 (en) * 2000-08-04 2003-01-08 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, head, and memory element
JP2002334971A (ja) * 2001-05-09 2002-11-22 Nec Corp 磁性メモリ及びその動作方法
JP3769241B2 (ja) 2002-03-29 2006-04-19 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
US7184301B2 (en) 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
AU2003219639A1 (en) 2003-04-16 2004-11-04 Agency For Science, Technology And Research Magnetic memory device
JP3824600B2 (ja) * 2003-07-30 2006-09-20 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP4665382B2 (ja) 2003-09-08 2011-04-06 ソニー株式会社 磁気メモリ
JP2005101441A (ja) * 2003-09-26 2005-04-14 Anelva Corp 磁気抵抗多層膜
JP4143020B2 (ja) 2003-11-13 2008-09-03 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP3863536B2 (ja) 2004-05-17 2006-12-27 株式会社東芝 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ書き込み方法
JP4868198B2 (ja) 2004-08-19 2012-02-01 日本電気株式会社 磁性メモリ
JP2006073861A (ja) 2004-09-03 2006-03-16 Renesas Technology Corp 磁気記憶装置
JP2006165265A (ja) 2004-12-07 2006-06-22 Sony Corp 記憶素子及びメモリ
JP4877575B2 (ja) 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
WO2007053517A2 (en) * 2005-10-28 2007-05-10 The University Of Alabama Enhanced toggle-mram memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002084019A (ja) * 2000-09-08 2002-03-22 Canon Inc 磁気デバイス及び固体磁気メモリ
JP2004193595A (ja) * 2002-11-26 2004-07-08 Toshiba Corp 磁気セル及び磁気メモリ
JP2005044490A (ja) * 2003-04-18 2005-02-17 Alps Electric Co Ltd Ｃｐｐ型巨大磁気抵抗効果ヘッド
WO2005098953A1 (ja) * 2004-03-31 2005-10-20 Nec Corporation 磁化方向制御方法、及びそれを応用したｍｒａｍ

Also Published As

Publication number Publication date
US8675399B2 (en) 2014-03-18
US20100110591A1 (en) 2010-05-06
JPWO2008102498A1 (ja) 2010-05-27

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