WO2008081950A1 - 固体撮像装置及びその製造方法並びにカメラモジュール - Google Patents

固体撮像装置及びその製造方法並びにカメラモジュール Download PDF

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Publication number
WO2008081950A1
WO2008081950A1 PCT/JP2007/075332 JP2007075332W WO2008081950A1 WO 2008081950 A1 WO2008081950 A1 WO 2008081950A1 JP 2007075332 W JP2007075332 W JP 2007075332W WO 2008081950 A1 WO2008081950 A1 WO 2008081950A1
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Prior art keywords
light
solid
state imaging
cover
section
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PCT/JP2007/075332
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English (en)
French (fr)
Inventor
Manabu Bonkohara
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Manabu Bonkohara
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Application filed by Manabu Bonkohara filed Critical Manabu Bonkohara
Priority to US12/521,690 priority Critical patent/US8300143B2/en
Publication of WO2008081950A1 publication Critical patent/WO2008081950A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　簡単な構成で、固体撮像素子の透明カバーのエッジ部に照射された外部光と、透明カバーの内部を伝播する外部光に起因する画質劣化を防止する。 　固体撮像素子１０の撮像領域２６の全面を覆うように形成されたガラスカバー６０を、撮像領域２６に対応する透過部６０ａと、透過部６０ａより外側において当該透過部６０ａを取り囲むエッジ部６０ｂとから形成する。ガラスカバー６０のエッジ部６０ｂは、その全周にわたって選択的に除去されていて、それによって光出射側から光入射側に向かってその断面積が単調に減少する角錐台状部分をガラスカバー６０に形成している。前記角錐台状部分の外面には、光吸収、光反射または光散乱作用を持つ光機能膜６３が形成されている。
PCT/JP2007/075332 2006-12-29 2007-12-29 固体撮像装置及びその製造方法並びにカメラモジュール WO2008081950A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/521,690 US8300143B2 (en) 2006-12-29 2007-12-29 Solid-state imaging device, method of fabricating the same, and camera module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006356931A JP2008166632A (ja) 2006-12-29 2006-12-29 固体撮像装置及びその製造方法並びにカメラモジュール
JP2006-356931 2006-12-29

Publications (1)

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WO2008081950A1 true WO2008081950A1 (ja) 2008-07-10

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US (1) US8300143B2 (ja)
JP (1) JP2008166632A (ja)
WO (1) WO2008081950A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
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WO2010086936A1 (ja) * 2009-01-30 2010-08-05 パナソニック株式会社 半導体装置およびそれを用いた電子機器、ならびに半導体装置の製造方法
EP2261977A1 (en) * 2009-06-08 2010-12-15 STMicroelectronics (Grenoble) SAS Camera module and its method of manufacturing
WO2011117947A1 (ja) * 2010-03-26 2011-09-29 パナソニック株式会社 光学半導体装置
CN102623469A (zh) * 2011-01-26 2012-08-01 美士美积体产品公司 具有透明衬底和穿衬底通孔的光传感器
CN102623467A (zh) * 2011-01-26 2012-08-01 美士美积体产品公司 具有集成于芯片上的红外截止与色通干涉滤光片的光传感器
CN102620826A (zh) * 2011-01-26 2012-08-01 美士美积体产品公司 具有集成于芯片上的红外截止干涉滤光片与色彩滤光片的光传感器
US8803068B2 (en) 2011-01-26 2014-08-12 Maxim Integrated Products, Inc. Light sensor having a contiguous IR suppression filter and a transparent substrate
WO2017024994A1 (zh) * 2015-08-13 2017-02-16 苏州晶方半导体科技股份有限公司 封装结构及封装方法
CN108352388A (zh) * 2015-11-05 2018-07-31 索尼半导体解决方案公司 半导体装置、半导体装置制造方法和电子设备

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US9118825B2 (en) * 2008-02-22 2015-08-25 Nan Chang O-Film Optoelectronics Technology Ltd. Attachment of wafer level optics
JP2010177569A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 光学デバイス及びその製造方法
JP5178569B2 (ja) 2009-02-13 2013-04-10 株式会社東芝 固体撮像装置
JP5489543B2 (ja) * 2009-06-09 2014-05-14 キヤノン株式会社 固体撮像装置
JP5674399B2 (ja) * 2010-09-22 2015-02-25 富士フイルム株式会社 重合性組成物、感光層、永久パターン、ウエハレベルレンズ、固体撮像素子、及び、パターン形成方法
CN102412256A (zh) * 2011-10-28 2012-04-11 格科微电子（上海）有限公司 封装的图像传感器及形成方法、降低其眩光现象的方法
KR102031654B1 (ko) 2012-05-23 2019-10-15 삼성디스플레이 주식회사 윈도우 구조물, 그 제조 방법, 윈도우 구조물을 포함하는 카메라가 탑재된 전자 장치 및 그 제조 방법
CN105122453B (zh) * 2013-04-01 2018-08-10 豪雅冠得股份有限公司 近红外线吸收玻璃及其制造方法
JP2015019143A (ja) * 2013-07-09 2015-01-29 ソニー株式会社 撮像装置、およびカメラシステム
CN105118843B (zh) * 2015-09-02 2018-09-28 苏州晶方半导体科技股份有限公司 封装结构及封装方法
US10892290B2 (en) * 2018-03-27 2021-01-12 Omnivision Technologies, Inc. Interconnect layer contact and method for improved packaged integrated circuit reliability
US10865962B2 (en) 2018-06-12 2020-12-15 Stmicroelectronics (Grenoble 2) Sas Protection mechanism for light source
CN110594704B (zh) * 2018-06-12 2021-10-29 意法半导体(格勒诺布尔2)公司 光源的保护机构
FR3085465B1 (fr) 2018-08-31 2021-05-21 St Microelectronics Grenoble 2 Mecanisme de protection pour source lumineuse
CN210118715U (zh) 2018-06-12 2020-02-28 意法半导体(格勒诺布尔2)公司 用于安装在基板上的光源的壳体和电子设备
CN110797362B (zh) * 2019-11-04 2022-05-24 重庆高开清芯科技产业发展有限公司 一种图像传感芯片的封装结构以及图像传感器
WO2023095457A1 (ja) * 2021-11-26 2023-06-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
US20240021639A1 (en) 2022-07-18 2024-01-18 Visera Technologies Company Ltd. Image sensor and manufacturing method thereof

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JP2006041183A (ja) * 2004-07-27 2006-02-09 Fujitsu Ltd 撮像装置
JP2006041277A (ja) * 2004-07-28 2006-02-09 Fuji Photo Film Co Ltd 固体撮像装置及び固体撮像装置の製造方法
JP2007142194A (ja) * 2005-11-18 2007-06-07 Matsushita Electric Ind Co Ltd 固体撮像装置

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010086936A1 (ja) * 2009-01-30 2010-08-05 パナソニック株式会社 半導体装置およびそれを用いた電子機器、ならびに半導体装置の製造方法
US8575712B2 (en) 2009-06-08 2013-11-05 Stmicroelectronics (Grenoble 2) Sas Manufacturing of a camera module
EP2261977A1 (en) * 2009-06-08 2010-12-15 STMicroelectronics (Grenoble) SAS Camera module and its method of manufacturing
WO2010142648A1 (en) * 2009-06-08 2010-12-16 Stmicroelectronics (Grenoble 2) Sas Manufacturing of a camera module
WO2011117947A1 (ja) * 2010-03-26 2011-09-29 パナソニック株式会社 光学半導体装置
US8803270B2 (en) 2011-01-26 2014-08-12 Maxim Integrated Products, Inc. Light sensor having IR cut and color pass interference filter integrated on-chip
US8809099B2 (en) 2011-01-26 2014-08-19 Maxim Integrated Products, Inc. Light sensor having IR cut interference filter with color filter integrated on-chip
CN102620826A (zh) * 2011-01-26 2012-08-01 美士美积体产品公司 具有集成于芯片上的红外截止干涉滤光片与色彩滤光片的光传感器
CN102623467A (zh) * 2011-01-26 2012-08-01 美士美积体产品公司 具有集成于芯片上的红外截止与色通干涉滤光片的光传感器
US8749007B1 (en) 2011-01-26 2014-06-10 Maxim Integrated Products, Inc. Light sensor having transparent substrate and diffuser formed therein
US8779540B2 (en) 2011-01-26 2014-07-15 Maxim Integrated Products, Inc. Light sensor having transparent substrate with lens formed therein
US8791404B2 (en) 2011-01-26 2014-07-29 Maxim Integrated Products, Inc. Light sensor having a transparent substrate, a contiguous IR suppression filter and through-substrate vias
CN102623469A (zh) * 2011-01-26 2012-08-01 美士美积体产品公司 具有透明衬底和穿衬底通孔的光传感器
US8803068B2 (en) 2011-01-26 2014-08-12 Maxim Integrated Products, Inc. Light sensor having a contiguous IR suppression filter and a transparent substrate
CN102623468A (zh) * 2011-01-26 2012-08-01 美士美积体产品公司 具有其中形成有透镜的透明衬底的光传感器
US9129874B1 (en) 2011-01-26 2015-09-08 Maxim Integrated Products, Inc. Light sensor having IR cut interference filter with color filter integrated on-chip
US9224890B1 (en) 2011-01-26 2015-12-29 Maxim Integrated Products, Inc. Light sensor having transparent substrate with lens formed therein
US9224884B2 (en) 2011-01-26 2015-12-29 Maxim Integrated Products, Inc. Light sensor having transparent substrate and diffuser formed therein
CN102623469B (zh) * 2011-01-26 2016-05-04 马克西姆综合产品公司 具有透明衬底和穿衬底通孔的光传感器
US9472586B1 (en) 2011-01-26 2016-10-18 Maxim Integrated Products, Inc. Light sensor having transparent substrate and through-substrate vias and a contiguous IR suppression filter
US9472696B1 (en) 2011-01-26 2016-10-18 Maxim Integrated Products, Inc. Light sensor having a contiguous IR suppression filter and transparent substrate
WO2017024994A1 (zh) * 2015-08-13 2017-02-16 苏州晶方半导体科技股份有限公司 封装结构及封装方法
US10490583B2 (en) 2015-08-13 2019-11-26 China Wafer Level Csp Co., Ltd. Packaging structure and packaging method
CN108352388A (zh) * 2015-11-05 2018-07-31 索尼半导体解决方案公司 半导体装置、半导体装置制造方法和电子设备
CN108352388B (zh) * 2015-11-05 2022-11-18 索尼半导体解决方案公司 半导体装置、半导体装置制造方法和电子设备

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Publication number Publication date
US20110122303A1 (en) 2011-05-26
JP2008166632A (ja) 2008-07-17
US8300143B2 (en) 2012-10-30

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