WO2008078788A1 - 放熱基板およびこれを用いた電子装置 - Google Patents
放熱基板およびこれを用いた電子装置 Download PDFInfo
- Publication number
- WO2008078788A1 WO2008078788A1 PCT/JP2007/075009 JP2007075009W WO2008078788A1 WO 2008078788 A1 WO2008078788 A1 WO 2008078788A1 JP 2007075009 W JP2007075009 W JP 2007075009W WO 2008078788 A1 WO2008078788 A1 WO 2008078788A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- heat dissipating
- same
- electronic device
- dissipating substrate
- metal layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
放熱基板は、セラミック基板と、金属層と、1以上の放熱部材を有する。金属層は、前記セラミック基板の表面に設けられている。放熱部材は、金属層と当接する第一表面と、該第一表面の反対側にある第二表面とを具備する。金属層の面積Aが、第一表面の面積Bより大きく、かつ前記第二表面の面積A’より小さい。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008551139A JP5202333B2 (ja) | 2006-12-26 | 2007-12-26 | 放熱基板およびこれを用いた電子装置 |
EP07860238.0A EP2109138B1 (en) | 2006-12-26 | 2007-12-26 | Heat dissipating substrate and electronic device using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-348935 | 2006-12-26 | ||
JP2006348935 | 2006-12-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008078788A1 true WO2008078788A1 (ja) | 2008-07-03 |
Family
ID=39562579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/075009 WO2008078788A1 (ja) | 2006-12-26 | 2007-12-26 | 放熱基板およびこれを用いた電子装置 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2109138B1 (ja) |
JP (1) | JP5202333B2 (ja) |
WO (1) | WO2008078788A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010076948A (ja) * | 2008-09-24 | 2010-04-08 | Hitachi Metals Ltd | 窒化珪素回路基板およびそれを用いた半導体モジュール |
JP2010077013A (ja) * | 2008-08-29 | 2010-04-08 | Kyocera Corp | 炭素−金属複合体およびこれを用いた回路部材または放熱部材 |
CN102263185A (zh) * | 2010-05-28 | 2011-11-30 | 景德镇正宇奈米科技有限公司 | 热辐射散热发光二极管结构及其制作方法 |
JP2012248576A (ja) * | 2011-05-25 | 2012-12-13 | Mitsubishi Shindoh Co Ltd | ピン状フィン一体型ヒートシンク |
WO2013008651A1 (ja) * | 2011-07-14 | 2013-01-17 | 京セラ株式会社 | 回路基板および電子装置 |
JP2013115202A (ja) * | 2011-11-28 | 2013-06-10 | Toyota Industries Corp | 半導体装置 |
JP2013222886A (ja) * | 2012-04-18 | 2013-10-28 | Toshiba Corp | 半導体モジュール |
JP2016181549A (ja) * | 2015-03-23 | 2016-10-13 | 三菱マテリアル株式会社 | ヒートシンク付きパワーモジュール用基板 |
JPWO2020045494A1 (ja) * | 2018-08-30 | 2021-08-10 | 京セラ株式会社 | 電気メス用ヘッド |
WO2022054691A1 (ja) * | 2020-09-11 | 2022-03-17 | オムロン株式会社 | 放熱構造体 |
CN115884952A (zh) * | 2020-07-21 | 2023-03-31 | 罗杰斯德国有限公司 | 制造金属陶瓷基板的方法和借助其制造的金属陶瓷基板 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201854534U (zh) * | 2010-06-24 | 2011-06-01 | 景德镇正宇奈米科技有限公司 | 陶瓷辐射散热结构 |
JP5397497B2 (ja) | 2012-04-20 | 2014-01-22 | ダイキン工業株式会社 | 冷凍装置 |
JP2014013789A (ja) * | 2012-07-03 | 2014-01-23 | Denso Corp | 半導体装置 |
TWI513069B (zh) * | 2013-05-21 | 2015-12-11 | Subtron Technology Co Ltd | 散熱板 |
JP6259625B2 (ja) * | 2013-10-02 | 2018-01-10 | 日産自動車株式会社 | 絶縁基板と冷却器の接合構造体、その製造方法、パワー半導体モジュール、及びその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0969590A (ja) | 1995-06-23 | 1997-03-11 | Toshiba Corp | 窒化けい素回路基板 |
JPH10189845A (ja) * | 1996-12-25 | 1998-07-21 | Denso Corp | 半導体素子の放熱装置 |
JPH11307696A (ja) * | 1998-04-20 | 1999-11-05 | Mitsubishi Electric Corp | パワー半導体装置及びその製造方法 |
EP1107310A2 (de) | 1999-12-08 | 2001-06-13 | DaimlerChrysler Rail Systems GmbH | Isolationsverbesserung bei Hochleistungs-Halbleitermodulen |
JP2003017627A (ja) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | セラミックス回路基板およびそれを用いた半導体モジュール |
JP2006140402A (ja) * | 2004-11-15 | 2006-06-01 | Toshiba Corp | 半導体集積回路装置 |
JP2006245437A (ja) | 2005-03-04 | 2006-09-14 | Hitachi Metals Ltd | セラミックス回路基板およびパワーモジュール並びにパワーモジュールの製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63104360A (ja) * | 1986-10-20 | 1988-05-09 | Mitsubishi Electric Corp | 半導体装置 |
JPH0226058A (ja) * | 1988-07-15 | 1990-01-29 | Hitachi Ltd | 混成集積回路用ヒートシンク |
US5172301A (en) * | 1991-10-08 | 1992-12-15 | Lsi Logic Corporation | Heatsink for board-mounted semiconductor devices and semiconductor device assembly employing same |
JP3139523B2 (ja) * | 1994-07-15 | 2001-03-05 | 三菱マテリアル株式会社 | 放熱フィン |
JP2845203B2 (ja) * | 1996-07-19 | 1999-01-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6294244B1 (en) * | 1997-12-22 | 2001-09-25 | Kyocera Corporation | Wiring board having excellent heat-radiating property |
JPH11265976A (ja) * | 1998-03-18 | 1999-09-28 | Mitsubishi Electric Corp | パワー半導体モジュールおよびその製造方法 |
JP2002231865A (ja) * | 2001-02-02 | 2002-08-16 | Toyota Industries Corp | ヒートシンク付絶縁基板、接合部材及び接合方法 |
JP4394477B2 (ja) * | 2003-03-27 | 2010-01-06 | Dowaホールディングス株式会社 | 金属−セラミックス接合基板の製造方法 |
JP4496404B2 (ja) * | 2003-10-10 | 2010-07-07 | Dowaメタルテック株式会社 | 金属−セラミックス接合基板およびその製造方法 |
-
2007
- 2007-12-26 EP EP07860238.0A patent/EP2109138B1/en not_active Not-in-force
- 2007-12-26 WO PCT/JP2007/075009 patent/WO2008078788A1/ja active Application Filing
- 2007-12-26 JP JP2008551139A patent/JP5202333B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0969590A (ja) | 1995-06-23 | 1997-03-11 | Toshiba Corp | 窒化けい素回路基板 |
JPH10189845A (ja) * | 1996-12-25 | 1998-07-21 | Denso Corp | 半導体素子の放熱装置 |
JPH11307696A (ja) * | 1998-04-20 | 1999-11-05 | Mitsubishi Electric Corp | パワー半導体装置及びその製造方法 |
EP1107310A2 (de) | 1999-12-08 | 2001-06-13 | DaimlerChrysler Rail Systems GmbH | Isolationsverbesserung bei Hochleistungs-Halbleitermodulen |
JP2003017627A (ja) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | セラミックス回路基板およびそれを用いた半導体モジュール |
JP2006140402A (ja) * | 2004-11-15 | 2006-06-01 | Toshiba Corp | 半導体集積回路装置 |
JP2006245437A (ja) | 2005-03-04 | 2006-09-14 | Hitachi Metals Ltd | セラミックス回路基板およびパワーモジュール並びにパワーモジュールの製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2109138A4 * |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010077013A (ja) * | 2008-08-29 | 2010-04-08 | Kyocera Corp | 炭素−金属複合体およびこれを用いた回路部材または放熱部材 |
JP2010076948A (ja) * | 2008-09-24 | 2010-04-08 | Hitachi Metals Ltd | 窒化珪素回路基板およびそれを用いた半導体モジュール |
CN102263185A (zh) * | 2010-05-28 | 2011-11-30 | 景德镇正宇奈米科技有限公司 | 热辐射散热发光二极管结构及其制作方法 |
JP2012248576A (ja) * | 2011-05-25 | 2012-12-13 | Mitsubishi Shindoh Co Ltd | ピン状フィン一体型ヒートシンク |
JPWO2013008651A1 (ja) * | 2011-07-14 | 2015-02-23 | 京セラ株式会社 | 回路基板および電子装置 |
WO2013008651A1 (ja) * | 2011-07-14 | 2013-01-17 | 京セラ株式会社 | 回路基板および電子装置 |
JP5665988B2 (ja) * | 2011-07-14 | 2015-02-04 | 京セラ株式会社 | 回路基板および電子装置 |
JP2013115202A (ja) * | 2011-11-28 | 2013-06-10 | Toyota Industries Corp | 半導体装置 |
JP2013222886A (ja) * | 2012-04-18 | 2013-10-28 | Toshiba Corp | 半導体モジュール |
JP2016181549A (ja) * | 2015-03-23 | 2016-10-13 | 三菱マテリアル株式会社 | ヒートシンク付きパワーモジュール用基板 |
JPWO2020045494A1 (ja) * | 2018-08-30 | 2021-08-10 | 京セラ株式会社 | 電気メス用ヘッド |
JP7248687B2 (ja) | 2018-08-30 | 2023-03-29 | 京セラ株式会社 | 電気メス用ヘッド |
CN115884952A (zh) * | 2020-07-21 | 2023-03-31 | 罗杰斯德国有限公司 | 制造金属陶瓷基板的方法和借助其制造的金属陶瓷基板 |
WO2022054691A1 (ja) * | 2020-09-11 | 2022-03-17 | オムロン株式会社 | 放熱構造体 |
Also Published As
Publication number | Publication date |
---|---|
JP5202333B2 (ja) | 2013-06-05 |
EP2109138A4 (en) | 2012-02-22 |
EP2109138A1 (en) | 2009-10-14 |
EP2109138B1 (en) | 2015-12-23 |
JPWO2008078788A1 (ja) | 2010-04-30 |
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