WO2008149818A1 - 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置 - Google Patents

積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置 Download PDF

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Publication number
WO2008149818A1
WO2008149818A1 PCT/JP2008/060068 JP2008060068W WO2008149818A1 WO 2008149818 A1 WO2008149818 A1 WO 2008149818A1 JP 2008060068 W JP2008060068 W JP 2008060068W WO 2008149818 A1 WO2008149818 A1 WO 2008149818A1
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WIPO (PCT)
Prior art keywords
heat dissipating
base body
substrate
laminated heat
dissipating base
Prior art date
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PCT/JP2008/060068
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English (en)
French (fr)
Inventor
Yuichi Abe
Kiyotaka Nakamura
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Kyocera Corporation
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Publication date
Application filed by Kyocera Corporation filed Critical Kyocera Corporation
Priority to EP08777066A priority Critical patent/EP2157607A4/en
Priority to JP2009517850A priority patent/JP5144657B2/ja
Publication of WO2008149818A1 publication Critical patent/WO2008149818A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • C04B37/006—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
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    • C04B2237/368—Silicon nitride
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H05K1/144—Stacked arrangements of planar printed circuit boards
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
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    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Abstract

　上下に対面配置した絶縁性の第１基板２１および第２基板２２と、第１基板２１と第２基板２２の間に挟んだ放熱部材４２と、上側に位置する第１基板２１の上面、および下側に位置する第２基板２２の下面のそれぞれに設けた回路部材４１とを有する積層型放熱基体１であって、第１基板２１と放熱部材４２との間、および第２基板２２と回路部材４１との間の、少なくとも一方に接合部材を介してなるとともに、この接合部材は、第１基板２１および／または第２基板２２側に活性金属を含む活性金属層３１，３２を、放熱部材４２および回路部材４１の少なくとも一方側に金属からなる結合層５１，５２を、それぞれ有している。
PCT/JP2008/060068 2007-05-30 2008-05-30 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置 WO2008149818A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08777066A EP2157607A4 (en) 2007-05-30 2008-05-30 LAMINATED HEAT-DISPOSING BASE BODY AND HEAT DISPOSAL UNIT AND ELECTRONIC DEVICE WITH LAMINATED HEAT-DISINFECTING BASE BODY
JP2009517850A JP5144657B2 (ja) 2007-05-30 2008-05-30 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007143956 2007-05-30
JP2007-143956 2007-05-30

Publications (1)

Publication Number Publication Date
WO2008149818A1 true WO2008149818A1 (ja) 2008-12-11

Family

ID=40093636

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PCT/JP2008/060068 WO2008149818A1 (ja) 2007-05-30 2008-05-30 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置

Country Status (3)

Country Link
EP (1) EP2157607A4 (ja)
JP (1) JP5144657B2 (ja)
WO (1) WO2008149818A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016046430A (ja) * 2014-08-25 2016-04-04 京セラ株式会社 回路基板、および電子装置
JP2016092359A (ja) * 2014-11-11 2016-05-23 三菱マテリアル株式会社 パワーモジュール用基板
JPWO2016121660A1 (ja) * 2015-01-29 2017-10-05 京セラ株式会社 回路基板および電子装置
JP7398565B2 (ja) 2019-12-19 2023-12-14 ロジャーズ ジャーマニー ゲーエムベーハー 金属－セラミック基板を生産する方法及びそのような方法によって生産された金属－セラミック基板
JP7400109B2 (ja) 2019-12-19 2023-12-18 ロジャーズ ジャーマニー ゲーエムベーハー 金属－セラミック基板を生産する方法及びそのような方法によって生産された金属－セラミック基板

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011149065A1 (ja) * 2010-05-27 2011-12-01 京セラ株式会社 回路基板およびこれを用いた電子装置
DE102019126954A1 (de) * 2019-10-08 2021-04-08 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats, Lötsystem und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren

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JPH1093244A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 多層窒化けい素回路基板
JPH09191059A (ja) * 1996-12-04 1997-07-22 Denki Kagaku Kogyo Kk パワー半導体モジュール基板
JP2004022973A (ja) * 2002-06-19 2004-01-22 Kyocera Corp セラミック回路基板および半導体モジュール
JP2006245479A (ja) * 2005-03-07 2006-09-14 Nichicon Corp 電子部品冷却装置

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016046430A (ja) * 2014-08-25 2016-04-04 京セラ株式会社 回路基板、および電子装置
JP2016092359A (ja) * 2014-11-11 2016-05-23 三菱マテリアル株式会社 パワーモジュール用基板
JPWO2016121660A1 (ja) * 2015-01-29 2017-10-05 京セラ株式会社 回路基板および電子装置
JP7398565B2 (ja) 2019-12-19 2023-12-14 ロジャーズ ジャーマニー ゲーエムベーハー 金属－セラミック基板を生産する方法及びそのような方法によって生産された金属－セラミック基板
JP7400109B2 (ja) 2019-12-19 2023-12-18 ロジャーズ ジャーマニー ゲーエムベーハー 金属－セラミック基板を生産する方法及びそのような方法によって生産された金属－セラミック基板

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JPWO2008149818A1 (ja) 2010-08-26
EP2157607A1 (en) 2010-02-24
EP2157607A4 (en) 2012-09-05
JP5144657B2 (ja) 2013-02-13

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