WO2008062562A1 - Structure de bande interdite électromagnétique, étiquette d'identification par radiofréquence, filtre antiparasite, feuille d'absorption de bruit et tableau de connexions à fonction d'absorption de bruit - Google Patents
Structure de bande interdite électromagnétique, étiquette d'identification par radiofréquence, filtre antiparasite, feuille d'absorption de bruit et tableau de connexions à fonction d'absorption de bruit Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2005—Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
- H01Q15/008—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces said selective devices having Sievenpipers' mushroom elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
- H05K1/0233—Filters, inductors or a magnetic substance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0236—Electromagnetic band-gap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
- H01F1/36—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
- H01F1/37—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites in the form of particles in a bonding agent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0224—Patterned shielding planes, ground planes or power planes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0323—Carbon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/08—Magnetic details
- H05K2201/083—Magnetic materials
- H05K2201/086—Magnetic materials for inductive purposes, e.g. printed inductor with ferrite core
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
- H05K2201/09309—Core having two or more power planes; Capacitive laminate of two power planes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09781—Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
Definitions
- EBG structure antenna device, RF ID tag, noise filter, noise absorbing sheet and wiring board with noise absorbing function
- the present invention relates to an EBG (Electromagnetic Bandgap) structure, an antenna device using the structure, an RF ID (Radio Frequency Identification) tag, a noise filter, a noise absorbing sheet, and a wiring board with a noise absorbing function.
- EBG Electromagnetic Bandgap
- RF ID Radio Frequency Identification
- the EBG structure is a structure formed by periodically connecting unit structures that can be expressed by a predetermined equivalent circuit, and is known to exhibit mainly two functions.
- Another characteristic of the E BG structure is that it prevents transmission of signals and noise belonging to a predetermined frequency band when the structure is viewed from a direction parallel to the main surface of the E BG structure. It is. This is based on the mechanism that the incoming signal and noise are attenuated by periodically arranging unit structures that form an evanescent field for a certain frequency. Examples of proposals related to this include those disclosed in US Patent Publication No. 2006/005001 OA 1 (Patent Document 2).
- the inductance component or the capacitance component When the inductance component or the capacitance component is increased, it is possible to shift a region exhibiting high surface impedance or a signal (2) noise transmission blocking region to the low frequency side. As can be understood by considering the scaling law, the fact that the characteristics can be shifted to the low frequency side means that the EBG structure can be miniaturized. Therefore, there is a demand for a large inductance component or capacitance component for any application.
- the present invention seeks a highly versatile technology that contributes to the downsizing of an EBG structure, and provides an EBG structure that is applied to the technology and its application technology. With the goal.
- the inventors of the present invention have found that if the characteristic is shifted to the low frequency side by increasing the inductance component, a better characteristic can be obtained incidentally.
- the inductance component can be increased by applying a magnetic layer or magnetic film to the EBG structure.
- the EBG structure includes at least a part of a magnetic body.
- the magnetic part is a conductor constituting the EBG structure, for example, It is preferable that the ground conductor, the conductor constituting the capacitance, and / or the conductor constituting the inductance such as a via are arranged close to each other, preferably in contact with each other.
- the magnetic part include a ferrite film and a composite magnetic layer made of a magnetic powder and a resin binder.
- the inductance component By adding a magnetic part to the EBG structure, the inductance component can be increased, which contributes to downsizing of the EBG structure.
- FIG. 1 is a perspective view schematically showing a unit structure in an EBG structure according to a first embodiment of the present invention.
- FIG. 2 is a cross-sectional view of an EBG structure according to the first embodiment of the present invention.
- FIG. 3 is a perspective view schematically showing an EBG structure according to the first embodiment of the present invention.
- FIG. 4 is a diagram used for explaining an apparatus for producing a ferrite plating film.
- FIG. 5 is a diagram showing an equivalent circuit when the unit structure shown in FIG. 1 is viewed from above.
- FIG. 6 is a diagram showing an equivalent circuit that can be replaced with the equivalent circuit of FIG.
- FIG. 7 is a diagram for explaining that the bandwidth of the high impedance region can be increased by increasing the inductance.
- FIG. 8 is a diagram showing conditions on an equivalent circuit for widening the high impedance region.
- FIG. 9 is a view showing an R FI ID tag including the EBG structure shown in FIGS. 1 to 3.
- FIG. 10 is a top view of the RF ID tag shown in FIG. 9.
- FIG. 11 is a diagram showing a modification of the E BG structure.
- FIG. 12 is a diagram showing an RFID tag including an EBG structure that does not have a solid pattern ground layer.
- FIG. 13 is a diagram showing an RF ID tag having an EBG structure according to a second embodiment of the present invention.
- FIG. 14 is a perspective view schematically showing a unit structure in an EBG structure according to a second embodiment of the present invention.
- FIG. 15 is a cross-sectional view of an E BG structure according to the second embodiment of the present invention. Explanation of symbols
- the EBG structure 1 in the present embodiment has a magnetic layer 20 compared to a structure in which a floating capacitor layer 60 is added to a so-called mushroom structure.
- the EBG structure 1 in the present embodiment includes a ground layer 10 made of a conductive layer having a solid pattern, a magnetic layer 20 formed on the ground layer 10, and a ground layer 10.
- a body layer 50 and a floating capacitor layer 60 held in a floating state in the dielectric layer 50 to increase the capacitance are provided.
- the dielectric layer 50 is omitted to clarify the relationship between the components.
- the magnetic layer 20 in the present embodiment is a ferrite plating film formed by a ferrite plating method.
- the ferritic plating method is a method in which a solid surface is brought into contact with an aqueous solution containing at least ferrous ions as metal ions. F e 2 + or this and other metal hydroxide ions are adsorbed on it, and then the adsorbed F e 2 + is oxidized to obtain F e 3 +, which is between the metal hydroxide ions in the aqueous solution.
- a ferrite film is formed on the solid surface by utilizing the ferrite crystallization reaction.
- the ferrite-clad film formed by this method has a structure in which the crystalline phases are closely arranged and can be expected to have small anisotropic dispersion due to exchange coupling, and has a natural resonance frequency one order of magnitude higher than that of bulk ferrite. Has (permeability real part up to high frequency; U 'extends).
- the natural resonance frequency can also be controlled by changing the composition (Y. Sh i mada, N. Matsushita, M. Abe, K. Kondo, T. Chiba, and S.
- Ferrite plating film manufacturing apparatus as shown in Fig. 4 was used for forming the ferrite plating film.
- a base body (supporting body) 10 4 on which a ferrite film is formed is placed on a turntable 10 3.
- the solution stored in the tanks 10 5 and 10 6 for storing the liquid necessary for the plating is supplied to the substrate through the nozzles 10 1 and 10 2 together with the nitrogen gas coming out from the gas inlet 10 7 1 0 4 supplied.
- the excess solution is removed by centrifugal force due to rotation, and the base body 10 04 is connected via the nozzle 102. Centrifugal force due to rotation after the solution supplied to The step removed in step 1 is repeated.
- a 25 m thick polyimide sheet is placed on the rotating table 1 03 of the apparatus shown in Fig. 4, and deoxygenated ion exchange water is supplied while rotating at 1 50 rpm. Heated to ° C. Next, N 2 gas was introduced into the apparatus to form a deoxygenated atmosphere.
- FeCI 2 '4 H 2 0, Ni C ⁇ 2 ⁇ 6 ⁇ 20 , Zn CI 2 , Co CI 2 ⁇ 6 H 2 0 are shown in Table 1 below.
- a black film (ferrite film) was formed.
- a structure with a uniform film thickness was formed.
- the chemical composition of the membrane was determined by inductively coupled plasma emission spectroscopy (ICPS) after dissolving a membrane with a size of about 3 cm square to 5 cm square with hydrochloric acid.
- the permeability of the film was measured with a permeability meter using the shielded loop coil method.
- the specific resistance was the DC specific resistance in the in-plane direction of the ferrite film; 0 V (unit: ⁇ cm) was calculated from the measured surface resistivity (unit: ⁇ / sq) using the following formula.
- yO v yO s Xt
- t (unit: cm) represents the film thickness.
- the 4-probe method constant current application method, JISK 7 1 94
- double ring method Constant voltage application ⁇ Leakage current measurement method, JISK 691 1).
- the measurement results are also shown in Table 1 below.
- the amount of oxygen in the film is determined by the ferrite composition M 3 0 4 (M: metal element), but oxygen deficiency or excess oxygen is allowed.
- the resistivity of the ferrite material is less than 0.1 ⁇ cm, the EBG characteristics deteriorate due to the conductivity of the ferrite material. It is preferable that it has a specific resistance of m or more. In this way, it has become possible to manufacture a magnetic film that can handle the GHz band, which could not be applied in the past, and can also be applied to EBG structures.
- the ferrite material as described above is formed on a support such as a sheet antenna conductor made of resin such as PET or polyimide, and placed close to the conductor constituting the EBG structure.
- a support such as a sheet antenna conductor made of resin such as PET or polyimide
- the film is formed directly on the conductor constituting the EBG structure (for example, in the case of the present embodiment, the ground layer 10), the effect of increasing the inductance component becomes higher.
- the inductance component in the EBG structure increases, for example, the resonant frequency of the LC parallel resonant circuit decreases. Therefore, it is possible to contribute to downsizing of the EBG structure by providing a magnetic layer to the EBG structure. Note that it is possible to lower the resonant frequency of the LC parallel resonant circuit by increasing the capacitance component, but for reasons explained in detail below, increasing the inductance component is more characteristic. It is advantageous.
- FIG. 5 shows a unit structure of the EBG structure expressed by an equivalent circuit.
- the unit structure described above may be expressed by an equivalent circuit as shown in FIG. 6 by shifting the period by half.
- the surface impedance Z s of the surface approximated by the LC parallel resonant circuit having the inductance capacitance C can be expressed by the following equation (1).
- ⁇ angular frequency
- L inductance
- C capacitance
- j imaginary unit.
- the resonance angular frequency ⁇ 0 is expressed by the following equation (2).
- FIG. 7 shows a graph of equation (1) in consideration of equation (2).
- the signal 'noise transmission blocking region also shifts to the low frequency side because the inductance component increases as described above.
- the inductance component is increased by applying a magnetic material, the signal and noise transmission preventing effect can be obtained even at the high frequency side. This seems to be due to the loss due to / of the magnetic material, but in any case, if a magnetic material is added to the BG structure, the signal 'noise transmission blocking region is widened.
- the magnetic film 20 is not limited to the ferrite plating film described above, and a ferrite material is produced by a general film forming method such as a sputtering, and this is included in the EBG structure.
- the conductive layer may be disposed close to the conductive layer, or may be directly formed on the conductive layer included in the EBG structure.
- a ferrite material may be produced by a sintering method and arranged so as to be close to the conductor layer included in the EBG structure. However, they may be arranged so as to contact each other.
- the magnetic film 20 is not limited to the one made of a ferrite material, and may be configured using, for example, a composite magnetic body made of a magnetic powder and a resin binder. In this case, it is possible to obtain a noise absorption effect by the composite magnetic material itself and a broadening of the noise absorption effect in the EBG structure at the same time, so a larger noise suppression effect can be expected.
- FIG. 9 and FIG. 10 an RF ID tag having the above-described EBG structure 1 is shown. Note that the actual dielectric material may be relatively transparent (at least the inside can be seen through), but in FIG. 10 it is drawn as non-transparent to simplify the figure. .
- An antenna support layer 2 made of a dielectric is formed on 1. Furthermore, an antenna element 3 having a predetermined antenna pattern and I C 4 connected to the antenna element 3 are arranged on the upper surface of the antenna support layer 2. As can be understood from FIG. 10, the antenna element 3 in this example is a dipole antenna including a pattern 3 a that is symmetrical with respect to the longitudinal direction of the E BG structure with I C 4 as the center.
- the EBG structure 1 is configured to exhibit a high surface impedance in the frequency band transmitted and received by the antenna and disposed on the back surface of the antenna, the common-mode reflection effect in the frequency band transmitted and received by the antenna Thus, it is possible to improve the characteristics of the antenna placed near the metal. In the case of an antenna placed near a metal, the radiation field is canceled out by the anti-phase electric field reflected from the metal, and the antenna performance deteriorates. However, an EBG structure having a high surface impedance is placed between the antenna and the metal. As a result, the influence of metal near the antenna is suppressed by the in-phase reflection of the EBG structure. For the same reason, it is possible to expect improvement in antenna characteristics for antenna boards other than the RFID tag.
- the magnetic layer is formed on the ground layer.
- the magnetic material layer 21 is applied to other conductors constituting the EBG structure, for example, the conductor constituting the capacitance (floating capacitor layer 60). Alternatively, it may be given to via 30 or the like.
- the magnetic layer is placed in a position where it is not in direct contact with each conductive layer, such as a place inside the dielectric layer 50 and between the ground layer 10 and the floating capacitor layer 60. It is good also as giving. In this case, in the case of a magnetic film having slightly poor insulation, it is preferable to form the magnetic layer so as to avoid contact with the via.
- the EBG structure having a solid pattern ground layer has been described as an example.
- the present invention provides a solid pattern as disclosed in Patent Document 3, for example. It can also be applied to EBG structures that do not have a ground layer. That is, a magnetic layer may be included in an EBG structure having two conductor layers but no vias. In that case, the magnetic layer may be formed only on one side or both sides of the upper conductor layer, or may be formed only on one side or both sides of the lower conductor layer. Furthermore, it is good also as forming in both of them. In addition, the magnetic layer may be formed between the two conductive layers so as not to contact the conductive layer.
- FIG. 2 when an EBG structure that does not have a solid ground layer is included in a magnetic layer, and an antenna device such as an RFID tag is configured with the magnetic layer, FIG. As shown in FIG. 2, a shield support layer 5 made of a dielectric is provided on the back surface of the £ 80 structure 1 ′ (including a magnetic layer but not having a solid pattern ground layer).
- the shield layer 6 made of a solid pattern conductor may be formed on the lower surface of the shield support layer 5. Providing such a shield layer 6 can reduce the influence of nearby metal, so that, for example, it is possible to make the RFID tag compatible with metal.
- the antenna support layer 2 and the shield support It is necessary to increase the thickness of the layer 5 or to form the antenna support layer 2 and the shield support layer 5 with a material having a low dielectric constant.
- the material for the antenna support layer 2 and the shield support layer 5 is preferably a resin having a dielectric constant as low as possible, a foam material containing air, sponge, urethane, fiber, polyethylene foam, and acrylic foam.
- air concentrates the electric field in the air and lowers the electric field in the material. Therefore, it can be effective in reducing the loss for antenna devices.
- FIG. 13 there is shown an RF ID tag having an EBG structure according to the second embodiment of the present invention.
- the same components as those in the first embodiment are denoted by the same reference numerals in the drawing, and description thereof will be omitted.
- the EBG structure 1 "in the present embodiment is a structure in which a floating capacitor layer 60 is added to a so-called mushroom structure as can be understood from FIGS. 14 and 15.
- the EBG structure 1 ′′ in the present embodiment includes a ground layer 10 made of a conductive layer having a solid pattern, vias 30 extending perpendicularly from the ground layer 10, and a ground layer formed by the vias 30.
- a retained floating capacitor layer 60 In FIG. 14, the dielectric layer 50 is omitted in order to clarify the relationship among the constituent elements.
- the EBG structure 1 ′′ in the present embodiment has a configuration in which the magnetic layer 20 is omitted from the EBG structure 1 (FIGS. 1 and 2) in the first embodiment. Even in the antenna device, the antenna characteristics in the vicinity of the metal are improved by the in-phase reflection in the EBG structure 1 ".
- the EBG structure having the transmission blocking characteristic can be reduced in size, for example, the EBG structure is transmitted through the EBG structure.
- Use it as a noise filter for a part of the transmission line use it as a noise absorbing sheet that is placed near the transmission line to absorb conduction noise, or make the substrate itself an EBG structure and run the signal conductor there
- a wiring board with a noise absorbing function may be configured.
- the use of a magnetic material such as a composite magnetic material having a high loss characteristic in a frequency band other than the signal frequency can widen the high frequency side of the stop band, which is effective in expanding the stop band.
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US12/516,130 US8514147B2 (en) | 2006-11-22 | 2007-11-22 | EBG structure, antenna device, RFID tag, noise filter, noise absorptive sheet and wiring board with noise absorption function |
JP2008545315A JP5271714B2 (ja) | 2006-11-22 | 2007-11-22 | Ebg構造体、アンテナ装置、rfidタグ、ノイズフィルタ、ノイズ吸収シート及びノイズ吸収機能付き配線基板 |
Applications Claiming Priority (2)
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JP2006-316210 | 2006-11-22 | ||
JP2006316210 | 2006-11-22 |
Publications (1)
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WO2008062562A1 true WO2008062562A1 (fr) | 2008-05-29 |
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Family Applications (1)
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PCT/JP2007/001287 WO2008062562A1 (fr) | 2006-11-22 | 2007-11-22 | Structure de bande interdite électromagnétique, étiquette d'identification par radiofréquence, filtre antiparasite, feuille d'absorption de bruit et tableau de connexions à fonction d'absorption de bruit |
Country Status (3)
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US (1) | US8514147B2 (ja) |
JP (1) | JP5271714B2 (ja) |
WO (1) | WO2008062562A1 (ja) |
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Also Published As
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US20100053013A1 (en) | 2010-03-04 |
JPWO2008062562A1 (ja) | 2010-03-04 |
US8514147B2 (en) | 2013-08-20 |
JP5271714B2 (ja) | 2013-08-21 |
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