WO2008047580A1 - Élément de batterie solaire et procédé de fabrication associé - Google Patents
Élément de batterie solaire et procédé de fabrication associé Download PDFInfo
- Publication number
- WO2008047580A1 WO2008047580A1 PCT/JP2007/069050 JP2007069050W WO2008047580A1 WO 2008047580 A1 WO2008047580 A1 WO 2008047580A1 JP 2007069050 W JP2007069050 W JP 2007069050W WO 2008047580 A1 WO2008047580 A1 WO 2008047580A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon substrate
- solar cell
- cell element
- electrode
- zinc
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 82
- 239000010703 silicon Substances 0.000 claims abstract description 82
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 39
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 33
- 239000011701 zinc Substances 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
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- 238000001816 cooling Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 15
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 3
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 claims description 3
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- 239000011147 inorganic material Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
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- 238000007650 screen-printing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
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- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101100520662 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PBA1 gene Proteins 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a solar cell element and a method for manufacturing the same.
- a solar cell element converts solar energy into electric energy.
- a conventional solar cell element includes a silicon substrate having a light receiving surface and a back surface, and an electrode mainly composed of aluminum formed on the surface of the silicon substrate.
- Patent Document 1 Japanese Unexamined Patent Publication No. 2003-223813
- the present invention has been made in view of such a problem, and an object thereof is to provide a high-performance solar cell element.
- the solar cell element of the present invention includes a silicon substrate and a first electrode made of a metal containing zinc and aluminum and formed on the silicon substrate.
- the solar cell element of the present invention includes an electrode formed of a metal containing zinc and aluminum and formed on a silicon substrate.
- FIG. 1 is a cross-sectional view showing one embodiment of a solar cell element
- FIG. 2 (a) is a plan view of the first surface (light-receiving surface) of the solar cell element shown in FIG. b) is a plan view of the second surface (back surface of the light receiving surface) of the solar cell element shown in FIG.
- the solar cell element according to the present embodiment includes a silicon substrate 1 having a first surface (light receiving surface) and a second surface (back surface), a metal containing zinc, and aluminum. And a first electrode formed on the substrate.
- the first electrode is formed on the second surface of the silicon substrate 1. Accordingly, even when a thin silicon substrate 1 having a thickness of 200 m or less is used, for example, warpage of the silicon substrate 1 can be reduced.
- a solar cell element is a silicon substrate 1 having a first conductivity type.
- the back electrode 5 is composed of a current collector (first electrode) 5a and an output extraction part (second electrode) 5b that extracts the electricity collected by the current collector 5a.
- a diffusion layer 2 and an antireflection film 3 having a second conductivity type are formed on the first surface side of the silicon substrate 1.
- a back surface electric field region 6 is formed on the second surface side of the silicon substrate 1.
- a silicon substrate that is mainly a p-type semiconductor when light is incident from the light-receiving surface side of the solar cell element
- the antireflection film 3 plays the role of increasing the amount of photogenerated carriers by reducing the reflectance in a desired light wavelength region by the refractive index and film thickness of the film to be the antireflection film. Improve the photocurrent density sc of the element.
- the solar cell element of the present invention includes a silicon substrate 1 provided with a current collector 5a (first electrode) that is a sintered electrode mainly composed of aluminum.
- a current collector 5a first electrode
- inorganic particles having a melting point lower than that of aluminum are present. Added externally.
- Such inorganic particles are metals containing zinc.
- the fact that aluminum is the main component of the current collector 5a means that the weight of aluminum is greater than the weight of the inorganic particles in the configuration of the current collector 5a.
- “inorganic particles are externally added to the current collecting portion 5a” means that the conductive paste as the electrode material contains inorganic particles.
- the inorganic particles are zinc or a zinc alloy, the resistance loss in the current collector 5a is reduced.
- the inorganic particles containing zinc in this embodiment do not contain glass components such as zinc oxide.
- the current collector 5a is formed on substantially the entire surface of FIG. 2 excluding the output extraction portion 5b on one main surface of the silicon substrate.
- the back surface field region 6 (BSF region) can be formed on substantially the entire back surface side of the solar cell element by sufficiently diffusing aluminum, which is a p-type impurity element, on the back surface side of the silicon substrate 1.
- the open circuit voltage Voc can be improved by the BSF effect, and the element efficiency can be further improved.
- the current collector 5a further includes a glass frit, the adhesive strength between the silicon substrate 1 and the current collector 5a can be increased. For this reason, it is possible to further suppress the deterioration of output characteristics due to the current collector 5a being peeled off from the silicon substrate 1.
- the current collector 5a preferably contains 3 to 50 parts by weight of zinc or a zinc alloy with respect to 100 parts by weight of aluminum.
- the warp of the silicon substrate 1 can be sufficiently suppressed, and a sufficient back surface field region 6 (BSF region) can be formed, so that adhesive strength, electrical conductivity, and output characteristics are simultaneously set to suitable values. be able to Yes
- the silicon substrate 1 used in the present embodiment is made of, for example, single crystal silicon or polycrystalline silicon containing a semiconductor impurity such as boron (B).
- a polycrystalline silicon substrate is used as the silicon substrate 1
- mass production is possible.
- an ingot formed by a pulling method or a forging method is cut into a size of about lOcm X 10 cm to 25 cm X 25 cm and sliced to a thickness of 500 m or less, more preferably 250 m or less.
- the cut surface of the silicon substrate 1 is cleaned by a very small amount of etching with NaOH, KOH, or hydrofluoric acid or nitric acid.
- a concavo-convex (roughened) structure is formed on the surface of the silicon substrate 1 on which sunlight is incident by a dry etching method or a wet etching method.
- a dry etching method or a wet etching method is formed on the surface of the silicon substrate 1 on which sunlight is incident by a dry etching method or a wet etching method.
- reflection of sunlight on the light receiving surface of the silicon substrate 1 can be reduced.
- the diffusion layer 2 having the second conductivity type is formed on the light receiving surface side of the silicon substrate 1, and a pn junction is formed between the diffusion region 2 and the butter region.
- the diffusion layer 2 becomes the n-type layer 2.
- the n-type doping element include Group 5 elements such as phosphorus (P), which are n + type having a sheet resistance of about 30 to 300 ⁇ / mouth.
- P phosphorus
- the diffusion layer 2 becomes the p-type layer 2.
- p-type doping elements include Group 3 elements such as boron (B). Note that p + and n + mean that the impurity concentration is high.
- the diffusion layer 2 is formed by applying a paste of PO to the surface of the silicon substrate 1 and thermally diffusing it.
- the diffusion layer 2 is formed by a scattering method or an ion implantation method in which p + ions are directly diffused.
- the diffusion layer 2 is formed to a depth of about 0 ⁇ 2 to 0.5 ⁇ 5 m.
- a diffusion prevention film may be previously formed on the portion, or the portion may be removed by etching later.
- the diffusion layer 2 other than the surface side of the silicon substrate 1 can be removed by applying a resist film on the surface side of the silicon substrate 1 and etching away using hydrofluoric acid or a mixture of hydrofluoric acid and nitric acid. This is done by removing the resist film.
- the method for forming the diffusion layer 2 is not limited to the above-described method.
- a hydrogenated amorphous silicon film, a crystalline silicon film including a microcrystalline silicon film, or the like is used. May be formed.
- an i-type silicon region may be formed between the silicon substrate 1 and the diffusion layer 2.
- an antireflection film 3 is formed on the surface of the diffusion layer 2 of the silicon substrate 1.
- the material of the antireflection film 3 is SiNx film (composition ratio (X) has a width around Si N stoichiometry), Ti
- An O film, SiO film, MgO film, ITO film, SnO film, ZnO film, or the like can be used.
- the antireflective film 3 having a refractive index of about 1.8 to 2.3 and a thickness of about 500 to about 1200 A is formed on the substrate 1, light reflection can be effectively reduced.
- Such an antireflection film 3 is formed by PECVD, vapor deposition, sputtering, or the like.
- the antireflection film 3 is patterned in a predetermined pattern in order to form the surface electrode 4 when the surface electrode 4 is not formed by the fire-through method described later. Examples of the patterning method include an etching method using a mask such as a resist (wet or dry), and a method of forming a mask in advance when forming the antireflection film 3 and removing the mask after forming the antireflection film 3. .
- the fire through method in which the surface electrode 4 and the diffusion layer 2 are brought into electrical contact by directly applying and baking the electrode paste of the surface electrode 4 on the antireflection film 3, the patterning is necessary. There is no. In Fig. 2 (a), the fire-thru method is used, so that the pattern is put into a lazy manner.
- a back surface field region (BSF region) 6 having an impurity concentration higher than that of the silicon substrate 1 is formed on the back surface side of the silicon substrate 1.
- the impurity element is plon-aluminum and p + -type.
- the carrier recombination loss near the back surface of the silicon substrate 1 can be reduced.
- Photogenerated carriers generated near the back surface of the silicon substrate 1 As a result of being accelerated by the 1S electric field, power is effectively extracted, and the sensitivity of long-wavelength light in particular increases. As a result, the photocurrent density sc is improved and the back surface electric field region 6 is improved.
- the open circuit voltage Voc is improved by reducing the amount of diode current in the region in contact with the back electrode 5 (the amount of negative current).
- Such a back surface electric field region 6 can be formed by diffusing a first conductivity type impurity in the silicon substrate 1 at a high concentration. For example, first, a diffusion layer such as an oxide film is formed in advance in the diffusion layer 2. Next, using the thermal diffusion method with BBr (boron tribromide) as the diffusion source
- the back surface electric field region 6 can be formed by setting the temperature to about 800 to 1100 ° C.
- aluminum powder and conductive paste made of organic vehicle are applied by a printing method, and then heat-treated (fired) at a temperature of about 700 to 850 ° C. Is diffused into the silicon substrate 1 to form the back surface electric field region 6.
- conductive paste is applied and baked by a printing method, it is not only possible to form a desired diffusion region only on the printed surface, but as described above, it is also formed on the back side at the same time as the diffusion layer 2 is formed. It is necessary to remove the n-type reverse conductivity type diffusion layer.
- the back electrode 5 composed of the front electrode 4, the current collector 5 a (first electrode) and the output extraction part 5 b (second electrode) is formed on the surface of the silicon substrate 1 as follows. To form. In the present embodiment, the back electrode 5 is in ohmic contact with the BSF layer 4.
- the surface electrode 4 is, for example, a paste obtained by adding 10 to 30 parts by weight, 0.;! To 5 parts by weight of metal powder made of silver or the like, an organic vehicle, and glass frit with respect to 100 parts by weight of silver.
- the electrode is formed by applying the prepared silver paste to the predetermined electrode shape shown in Fig. 2 (a) and firing it at a maximum temperature of S600 to 850 ° C for several tens of seconds to several tens of minutes. To do.
- a screen printing method can be used, and after coating, it is preferable to dry the solvent by evaporating at a predetermined temperature.
- the current collector 5a is made of a conductive paste containing a metal material containing zinc, aluminum, and an organic vehicle, except for a portion where the output extraction portion 5b is formed. Apply to almost the entire back surface.
- a coating method a screen printing method can be used. After coating, it is preferable to dry the solvent by evaporating at a predetermined temperature!
- the output extraction part 5b is made of, for example, 10 to 30 parts by weight of metal powder made of silver powder, an organic vehicle, and glass frit with respect to 100 parts by weight of silver. Apply ⁇ 5 parts by weight of conductive paste in paste form so that it has the electrode shape shown in Fig. 2 (b).
- a silver paste is applied at a position in contact with a part of the conductive paste so that a part of the current collector 5a and a part of the output extraction part 5b overlap each other.
- a coating method a known method such as a screen printing method can be used, and after coating, it is preferable to dry by evaporating the solvent at a predetermined temperature.
- the organic vehicle includes at least one resin selected from cellulose resins such as methylcellulose, ethylcellulose, and nitrocellulose, acrylic resins such as methyl methacrylate, and petital resins. Dissolved in organic solvents such as tallacetate, butylcetosolve, butylcetosolve acetate, turbineol, hydrogenated carotervineol, hydrogenated turvineol acetate, methyl ethyl ketone, isobornyl acetate, nopylacetate Can be used
- Glass frit is made of glass containing PbO, BO, SiO, ZnO, etc.
- Glass frit may be added in an amount of about 0.;! To 5 parts by weight with respect to 100 parts by weight of aluminum. However, as the amount of glass frit added increases, warpage tends to increase. The amount is preferably 5 parts by weight or less.
- a conductive paste and a silver paste are applied to the silicon substrate 1, and then dried in a drying furnace.
- the maximum temperature is 700 to 850 ° C for several tens of seconds to several tens of minutes.
- the back electrode 5 (the current collecting part 5a, the output extraction part 5b) is formed by baking to a certain extent.
- the conductive paste used in the present invention contains an inorganic material and aluminum.
- the inorganic material is a metal material containing zinc having a melting point lower than that of aluminum.
- containing zinc means a case where it is made of zinc and a case where it is made of a zinc alloy.
- aluminum has a melting point of 660.4 ° C
- zinc that can be used as an inorganic material has a melting point of 419.6 ° C.
- the average particle size is 30 111 or less, as long as the particle size passes through a sieve having an opening diameter of 75 am, for example.
- the average particle size is preferably 15 m or less.
- the shape of the aluminum and the inorganic material contained in the conductive paste powders such as a spherical shape, a flake shape, and an indefinite shape can be used.
- Such aluminum is, for example, powder having an average particle diameter of about 3 to 20 m, and the organic vehicle may be added in an amount of about 10 to 30 parts by weight with respect to 100 parts by weight of aluminum. Moreover, it is sufficient to add about 0.;! To 5 parts by weight with respect to 100 parts by weight of aluminum where glass frit may be added to the paste.
- the method for manufacturing a solar cell element includes a first step of applying a conductive paste to the silicon substrate 1.
- a coating method various methods such as a screen printing method, a roll coater method, and a dispenser method can be used.
- the conductive paste is subjected to a second step of baking at a melting point or higher of the inorganic material.
- the current collecting part 5a is formed by baking for several tens of seconds to several tens of minutes at a maximum temperature of 700 to 850 ° C in a baking furnace.
- the metal material containing zinc in the conductive paste is fired at the melting point or higher in the second step to be in a liquid phase. Therefore, the metal material containing zinc maintains a liquid phase state above the melting point and below the maximum temperature during firing.
- the metal material containing zinc in the liquid phase is cooled by flowing (spreading) to compensate for the volume shrinkage of aluminum. It can be thought that the amount of shrinkage of the entire conductive paste generated during the process can be reduced. At that time, the molten aluminum powder is joined to each other by an inorganic material. Therefore, the warpage of the silicon substrate due to the difference in thermal expansion coefficient between the silicon substrate and aluminum can be reduced.
- the temperature be rapidly raised and rapidly cooled by high-speed firing.
- the peak temperature is held for a few seconds.
- the temperature increase rate and temperature decrease rate are determined by attaching a thermocouple to the silicon substrate 1 and taking a temperature profile (temperature 1 hour). It is calculated from the slope of the temperature profile.
- the conductive paste is compared with an aluminum paste to which SiO, Al 2 O, or the like is added.
- the electrode made of a metal containing zinc and aluminum after the second step can suppress a decrease in the adhesive strength between the current collector 5a and the silicon substrate 1.
- the conductive paste preferably contains at least one of zinc powder and zinc alloy powder in an amount of 3 to 50 parts by weight with respect to 100 parts by weight of the aluminum powder. If it is 3 parts by weight or more, the above-described effects can be obtained more suitably.
- the firing furnace includes a furnace body 21 having an internal space, a transport mechanism 25 for loading and transporting a heat-treated member from the carry-in port 23 to the carry-out port 24 inside the furnace body, and heat treatment on the upper part of the transport mechanism 25.
- Heating means for example, an infrared lamp
- an exhaust device 28 for exhausting the solvent evaporated from the heat-treated member to the outside of the furnace body 21 is provided on the ceiling surface of the furnace body 21, and further, the ceiling surface of the furnace body 21 and the exhaust device 28 are heated. It is desirable to provide heating means 27 for this purpose.
- the furnace body 21 is made of a heat-resistant and corrosion-resistant metal such as stainless steel in a double structure, and a heat insulating material such as glass wool is arranged in a gap portion of the double structure.
- the furnace body 21 is opened at a portion so that the belt of the transport mechanism 25 circulates inside and outside the furnace body 21 to place and transport the heat-treated member 22. It is penetrated by the belt of the transport mechanism 25.
- the belt is turned around in the circumferential direction by a rotating roller at a position protruding outside the furnace body.
- a photo interrupter or a proximity sensor is provided, and a sensor and a buzzer for informing the operator of the presence / absence of the carry-in of the heat-treated member 22 are arranged. There is a thing.
- the transport mechanism 25 includes, for example, a mesh mesh belt or belt-like belt made of a stainless alloy, M-Cr alloy, or an alloy composition such as manganese, molybdenum, titanium, aluminum, niobium, chromium, zirconium, or boron, and a belt.
- Rotating roller 31 to fold the belt at both ends in the circumferential direction of the belt a driving roller 32 that transmits the driving force to the belt, a servo motor (not shown) that generates the driving force, and connecting the driving roller 32 and the servo motor
- the belt is formed in a ring shape by connecting the terminal ends so as to endlessly circulate in the conveying direction.
- the servo motor or / and the drive roller 32 or / and the rotating roller 31 are provided with an angular velocity sensor such as a rotary encoder, and the angular velocity of each axis, and hence the conveying speed of the belt, can be sequentially detected.
- the servo motor and / or the angular velocity sensor are electrically connected to the arithmetic processing unit via a signal line (not shown), and the belt is detected by an input signal from the arithmetic processing unit and / or an output signal to the arithmetic processing unit.
- the belt conveyance speed is controlled to a predetermined speed while sequentially detecting the conveyance speed.
- the infrared lamp 27 which is a heating means, is electrically connected to a power source disposed outside the furnace body 21 by a power source cape (not shown), and AC power or DC power is applied from the power source. When it generates heat, it emits infrared rays such as far infrared rays and near infrared rays. At least one or more infrared lamps are arranged in the furnace body internal space. For example, the infrared lamps may be arranged linearly, in an array, or arranged in an arch.
- the infrared lamp 27 is made of, for example, a heat generating light emitting body made of carbon molybdenum, tungsten, Ni—Cr, or the like that generates heat or emits light when energized and is contained in a vacuum container.
- a heat generating light emitting body made of carbon molybdenum, tungsten, Ni—Cr, or the like that generates heat or emits light when energized and is contained in a vacuum container.
- an infrared light bulb composed of a reflector or the like that reflects the infrared light emitted from the back surface of the heat-emitting body and irradiates the front surface may be used.
- the heat-emitting body may be embedded in a ceramic material such as silicon carbide, alumina, or cordierite.
- An infrared heater or the like that can be baked and solidified with a ceramic material or the like on its surface layer to increase infrared radiation efficiency may be used.
- a thermocouple made of alumel, chromel, platinum, rhodium, or the like, or a lamp temperature sensor made of a platinum resistance thermometer is disposed on the surface or inside of the infrared lamp 27.
- the temperature sensor detects the temperature of the temperature sensor itself and its surroundings, and based on the detected temperature, controls the voltage applied to the infrared lamp 27 via a driver circuit or an inverter circuit, etc. Heat treated and dried at temperature.
- the circuit for controlling the applied voltage includes a thyristor power transistor, a power FET (field effect transistor), and the like.
- the exhaust device 28 is provided on the ceiling surface of the furnace body 21, and the interior space of the furnace body 21 that is partially opened It consists of a tightly connected exhaust duct and a negative pressure generator (not shown) consisting of a blower motor, a bench lily pipe, and the like.
- the exhaust device 28 is configured to exhaust the steam generated in the internal space of the furnace body 21 by making the upper space in the exhaust duct and the furnace body relatively negative by such a negative pressure generator. .
- the hot-air supply device 29 measures the flow rate and pressure of the gas that has passed through the filter device, the filter device that removes impurities and dust such as air and nitrogen gas taken in from the outside of the furnace body 21
- a flow meter, pressure gauge, heater device that heats the gas that has passed through the filter device to a predetermined temperature, temperature sensor that measures the temperature and pressure of the gas that has passed through the heater device, pressure meter, and gas that has passed through the heater device Are blown into the furnace body through hot air piping, and hot air piping for introducing hot air from the blower blower to a predetermined position inside the furnace body.
- the hot air pipe 30 has at least one hole for installing an injection nozzle for injecting hot air at a predetermined position inside the furnace body 21, and the hot air is injected from the injection nozzle.
- the injection nozzle has a built-in shape adjustment mechanism so that the injection direction and shape can be finely adjusted.
- the injection nozzle is also equipped with a temperature sensor for measuring the temperature of the hot air to be injected and an injection detection sensor for detecting the presence or absence of injection so that hot air will not be injected due to clogging of the injection nozzle! Well! / But!
- the hot air pipe 30 is attached above the infrared lamp 27.
- the infrared lamp 27 is mounted in the vertical direction in which the heat-treated member 22 is mounted on the transfer device, so that the hot air pipe 30 emits infrared rays emitted from the infrared lamp to the heat-treated member. 22 is not prevented from being irradiated.
- the firing furnace of the present embodiment includes a furnace body 21 having an internal space, and a transport mechanism 25 that loads and transports the heat-treated member 22 from the carry-in port 23 to the carry-out port 24 inside the furnace body. Furthermore, an infrared lamp 27, which is a heating means for heating the heat-treated member 22 by emitting infrared rays when energized at a position opposite to the portion where the heat-treated member 22 is loaded and transported inside the furnace body 21, and Have As a result, the heat-treated member 22 is placed on the carrying mechanism 25 so that it is carried from the carry-in port 23 to the carry-out port 24, and an infrared laser disposed inside the furnace body 21. Infrared rays emitted from the amplifier 27 are irradiated and heated, and a solvent such as an organic solvent or water contained in the heat-treated member 22 itself, or an organic vehicle is heated, evaporated, and fired.
- an infrared lamp 27 which is a heating means for heating the heat-treated member 22 by emitting inf
- the hot air temperature from the hot air pipe 30 is equal to or higher than the dew point of the solvent at the portion ejected from the hot air pipe, and lower than the flash point when the solvent or the organic vehicle is flammable. It is preferable that Such hot air temperature is, for example, about 50 to 350 ° C.
- the total amount of hot air injection is preferably about 10 to 300% of the exhaust amount exhausted from the exhaust device.
- the injection speed of the hot air from which the hot air is injected from the injection nozzle is a speed sufficient for the hot air to reach the furnace body ceiling surface and the periphery of the exhaust duct to heat the portion. Such injection speed, for example 0.5; a ⁇ 100m / S about!.
- the shape of hot air sprayed from the spray nozzle can be suitably selected, for example, as a vertical cross-sectional shape, such as a triangular pyramid shape or a fan shape, and as a horizontal cross-sectional shape, a circular shape, an elliptical shape, or a rectangular shape is suitably selected. Can be done.
- the position where the injection nozzle is attached is sufficient for hot air to reach the furnace body ceiling surface and the periphery of the exhaust duct to heat the portion.
- the distance to the furnace body ceiling and the periphery of the exhaust duct is, for example, about 10 to 300 mm.
- the displacement is equivalent to the volume per unit time, and is about! ⁇ 1000 times the volume per unit time of the solvent vapor at the furnace temperature and furnace pressure generated in the furnace. It is about 1000 liters / minute.
- FIG. 5 is a cross-sectional view showing an example of another embodiment of the firing furnace according to the present invention.
- the infrared lamp includes a first infrared lamp 27a for heating the member to be heat-treated and a second infrared lamp 27b for heating the furnace body.
- the first infrared lamp 27a is disposed vertically downward relative to the first infrared lamp 27b, and the second infrared lamp 27b is disposed relatively upward in a vertical direction so that both faces the back. Be placed.
- Such an arrangement does not prevent the infrared rays emitted from the first infrared lamp 27a from reaching the heat-treated member 22, and the infrared rays emitted from the second infrared lamp 27b do not interfere with the furnace body 21. Does not prevent you from reaching the ceiling surface.
- FIG. 6 is a cross-sectional view showing an example of still another firing furnace according to the present invention.
- Examples of the furnace body heater 33 include a planar electric heater, a wound electric heater, and an electromagnetic induction heater.
- An electromagnetic induction heater applies an eddy current to a furnace wall surface made of a magnetic conductive material or a magnetic conductive material in contact with the furnace wall surface by applying an alternating current to a coil adjacent to the wall surface of the furnace body 21. It has a structure that generates Joule heat.
- the furnace body heater 33 includes, for example, a heat source that embeds a fluid pipe and causes the heated fluid to flow to exchange heat, and the furnace body 21 wall surface and the exhaust duct of the exhaust device 28 Embedded in or in contact with.
- the furnace body 21 ceiling surface and the periphery of the exhaust duct of the exhaust device 28 are directly or / and indirectly applied by the furnace body heater 33 buried or in contact with the wall surface of the furnace body 21 and / or the wall surface of the exhaust duct. Since it is warm, the vapor of the solvent and organic vehicle is exhausted from the furnace body 21 without reaching the dew point. Therefore, the droplets do not drop on the heat-treated member 22 and contaminate the heat-treated member 22.
- the firing furnace having the above-described structure may be used as a drying furnace after applying the conductive paste.
- it can be applied to drying and baking of aluminum paste as well as silver paste.
- the same effect can be obtained when the heating means for heating the member to be heated is other than an infrared lamp.
- the present invention is not limited to the above-described embodiment, and many modifications and changes can be made within the scope of the present invention.
- the structure of the solar cell element is not limited to the structure described above, and can be used for a solar cell element having a fired electrode only on one side, or limited to a crystalline silicon solar cell element. Absent.
- the baking step may be performed separately. Absent.
- the conductive paste may be applied to form the current collecting part 5a, and then the silver paste may be applied to form the output extraction part 5b, or vice versa. Can be obtained.
- drying after applying the conductive paste is omitted if there is no problem when the previous conductive paste adheres to the work table or screen of the printing press when the next conductive paste is applied. You can do it.
- the zinc alloy is not limited to the zinc-aluminum alloy of Examples described later.
- n-type diffusion layer 2 having a sheet resistance of 70 ⁇ / mouth by diffusing phosphorus atoms on the surface of a polycrystalline silicon p-type silicon substrate 1 having a thickness of 150 mm and an outer shape of 15 cm X 15 cm Formed.
- An antireflection film 3 having a silicon nitride film force was formed thereon.
- baking was performed at a maximum temperature of 790 ° C and a temperature drop rate of 30 ° C / sec. A silver paste was applied and fired to produce a solar cell element.
- Sample Nos.! To 10 contain 20 parts by weight of organic vehicle and 0.5 parts by weight of glass frit with respect to 100 parts by weight of aluminum powder, and further contain 1 to 60 parts by weight of zinc powder.
- the current collector 5a is formed.
- Sample number; ; ⁇ 20 contains 20 parts by weight of organic vehicle and 0.5 parts by weight of glass frit with respect to 100 parts by weight of aluminum powder, and further contains 1 to 60 parts by weight of zinc aluminum alloy powder. Part 5a is formed.
- Sample No. 2;! To 24 contain 20 parts by weight of organic vehicle and 0.5 parts by weight of glass frit with respect to 100 parts by weight of aluminum powder, and further contains 3 to 15 parts by weight of tin powder. Thus, the current collector 5a is formed.
- the melting point of tin is about 231.97 ° C.
- Sample Nos. 25 to 28 contain 20 parts by weight of an organic vehicle and 0.5 parts by weight of a glass frit with respect to 100 parts by weight of aluminum powder, and 3 parts by weight of Si02 powder.
- the current collecting part is formed by containing 15 parts by weight to 15 parts by weight.
- Sample No. 29 was formed by adding 20 parts by weight of organic vehicle and 0.5 parts by weight of glass frit to 100 parts by weight of aluminum powder to form a current collector.
- FIG. 3 is a diagram for explaining a method for evaluating the amount of warpage of the solar cell element according to this example.
- the amount of warpage was evaluated using a value including the thickness of the silicon substrate 1.
- the amount of warpage was evaluated by the difference in height between the lowest part (horizontal plane) and the highest part when placed on a horizontal plane.
- Table 1 shows the evaluation results.
- the output characteristics were measured under AMI.5 conditions using a solar simulator.
- the adhesive strength of the current collecting part 5a was evaluated by a peeling test using an adhesive tape.
- heat-resistant masking tape 2142 manufactured by Sumitomo 3EM Co., Ltd. was used, and it was determined that an item with severe peeling was not possible because the adhesive strength was not sufficient.
- Table 1 ⁇ indicates that there is no adhesion on the adhesive tape, ⁇ indicates that the adhesion area of the adhesive tape is less than 1/5, and X indicates that the adhesion area of the adhesive tape is 1/5 or more. It was assumed that there was adhesion.
- the solar cell elements of sample numbers 3 to 5, 22-24, and 26 to 29 in Example 1 were put into a moisture resistance test, and the rate of decrease in FF value (curve factor) was evaluated.
- the humidity resistance test is normally performed at a temperature S of 85 ° C and a humidity of 85% in accordance with JI SC 8917. In this example, the temperature is 90 ° C, which is a more severe condition. A humidity of 95% was adopted.
- the evaluation in this example is based on the relative ratio of “(FF value after moisture resistance test / FF value before moisture resistance test) 100” in%.
- the humidity resistance test was performed for 1000 hours, and the FF value was confirmed at 200 hours, 500 hours, and 840 hours.
- FIG. 1 is a diagram showing one embodiment of a solar cell element.
- FIG. 2 is a diagram showing an example of the electrode shape of the solar cell element shown in FIG. 1, where (a) is the light receiving surface side (front surface) and (b) is the non-light receiving surface side (back surface).
- FIG. 3 is a diagram for explaining a method for evaluating a warpage amount of a silicon substrate.
- FIG. 4 is a cross-sectional view showing an example of a heat treatment and drying apparatus.
- FIG. 5 is a cross-sectional view showing another example of the heat treatment and drying apparatus.
- FIG. 6 is a cross-sectional view showing another example of a heat treatment and drying apparatus.
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Description
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US12/443,412 US20100071761A1 (en) | 2006-09-28 | 2007-09-28 | Solar Cell Element and Method for Manufacturing the Same |
EP07828791.9A EP2077585A4 (en) | 2006-09-28 | 2007-09-28 | Solar battery element and method for manufacturing the same |
JP2008539732A JP5014350B2 (ja) | 2006-09-28 | 2007-09-28 | 太陽電池素子およびその製造方法 |
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JP2006-292394 | 2006-10-27 | ||
JP2007144025 | 2007-05-30 | ||
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PCT/JP2007/069050 WO2008047580A1 (fr) | 2006-09-28 | 2007-09-28 | Élément de batterie solaire et procédé de fabrication associé |
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US (1) | US20100071761A1 (ja) |
EP (1) | EP2077585A4 (ja) |
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JP2011066353A (ja) * | 2009-09-18 | 2011-03-31 | Noritake Co Ltd | 太陽電池用アルミニウムペースト |
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JP2016164969A (ja) * | 2015-02-26 | 2016-09-08 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
JP2016189433A (ja) * | 2015-03-30 | 2016-11-04 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
JP2018117146A (ja) * | 2015-07-31 | 2018-07-26 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
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US8076570B2 (en) | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
KR101139459B1 (ko) | 2009-08-27 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
JP5477180B2 (ja) * | 2010-06-10 | 2014-04-23 | 信越化学工業株式会社 | 太陽電池素子の電極焼成用焼成炉、太陽電池素子の製造方法及び太陽電池素子 |
US20120260982A1 (en) * | 2011-04-14 | 2012-10-18 | Hitachi Chemical Company, Ltd. | Paste composition for electrode, photovoltaic cell element, and photovoltaic cell |
US20120260981A1 (en) * | 2011-04-14 | 2012-10-18 | Hitachi Chemical Company, Ltd. | Paste composition for electrode, photovoltaic cell element, and photovoltaic cell |
JP6094392B2 (ja) * | 2013-06-11 | 2017-03-15 | 株式会社デンソー | 半導体装置 |
CN117059303B (zh) * | 2023-09-05 | 2024-04-16 | 江苏飞特尔通信有限公司 | 一种ltcc滤波器外部电极的导电铝浆及其制备方法 |
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- 2007-09-28 WO PCT/JP2007/069050 patent/WO2008047580A1/ja active Application Filing
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JP2010533379A (ja) * | 2007-07-09 | 2010-10-21 | フエロ コーポレーション | アルミニウムと、ホウ素、チタン、ニッケル、錫、銀、ガリウム、亜鉛、インジウム、及び銅のうち少なくとも1種とを含有する太陽電池コンタクト |
JP2011066353A (ja) * | 2009-09-18 | 2011-03-31 | Noritake Co Ltd | 太陽電池用アルミニウムペースト |
CN102024506A (zh) * | 2009-09-18 | 2011-04-20 | 诺利塔克股份有限公司 | 太阳能电池用铝膏 |
JP2015024636A (ja) * | 2013-07-29 | 2015-02-05 | セイコーエプソン株式会社 | 記録装置及び乾燥方法 |
JP2016164969A (ja) * | 2015-02-26 | 2016-09-08 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
JP2016189433A (ja) * | 2015-03-30 | 2016-11-04 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
JP2018117146A (ja) * | 2015-07-31 | 2018-07-26 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100071761A1 (en) | 2010-03-25 |
JPWO2008047580A1 (ja) | 2010-02-25 |
EP2077585A4 (en) | 2017-04-26 |
JP5014350B2 (ja) | 2012-08-29 |
EP2077585A1 (en) | 2009-07-08 |
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