WO2008041551A1 - Procédé de fabrication d'un film d'oxyde d'étain conducteur transparent - Google Patents

Procédé de fabrication d'un film d'oxyde d'étain conducteur transparent Download PDF

Info

Publication number
WO2008041551A1
WO2008041551A1 PCT/JP2007/068553 JP2007068553W WO2008041551A1 WO 2008041551 A1 WO2008041551 A1 WO 2008041551A1 JP 2007068553 W JP2007068553 W JP 2007068553W WO 2008041551 A1 WO2008041551 A1 WO 2008041551A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent conductive
conductive film
tin
tin oxide
thin film
Prior art date
Application number
PCT/JP2007/068553
Other languages
English (en)
Japanese (ja)
Inventor
Tetsuo Tsuchiya
Tomohiko Nakajima
Toshiya Kumagai
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to JP2008537475A priority Critical patent/JP5057476B2/ja
Publication of WO2008041551A1 publication Critical patent/WO2008041551A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Definitions

  • the present invention relates to an improved production of a fluorine-doped tin oxide transparent conductive film useful as an electrode material for a liquid crystal display, a plasma display, a field emission display (FED), a flat panel display (referred to as FPD), etc. Regarding the method.
  • an ITO thin film in which tin is doped in indium oxide exhibits the highest level of electrical conductivity and patterning, and is therefore the most widely used in the field.
  • Tin oxide-based transparent conductive films doped with fluorine or antimony are chemically stable and inexpensive, so they are used in applications such as solar cells. I'm starting.
  • fluorine-doped tin oxide has a conductivity that is an order of magnitude higher than antimony-doped tin oxide, and so its demand is expected to increase rapidly in the future.
  • a solid phase method such as a vapor phase method such as electron beam evaporation, CVD or spray pyrolysis, or a coating pyrolysis method is used. It has been known.
  • Patent Document 1 Non-Patent Documents 1 and 2.
  • the solid phase method has the advantage that it can be expected to have a large area and a low cost because a large chamber is not required.
  • Patent Document 2 Non-Patent Document 2
  • Patent literature 3 4
  • a metal oxide thin film is produced by irradiating an excimer laser in an oxygen atmosphere after a solution or the like in which a metal organic acid salt or an organic metal compound is dissolved in a soluble solvent is dispersedly coated on the substrate.
  • the method is known! /, Ru (Patent Document 3).
  • this manufacturing method is intended for the production of a general metal oxide crystal thin film, and does not intend to improve the conductivity of the metal oxide thin film. Moreover, nothing is taught about an efficient method for producing a tin oxide transparent conductive film, and the use of oxygen is indispensable, which is not an industrially advantageous method.
  • a metal organic compound is dissolved in a solvent to form a solution, which is applied to a substrate and then dried, and the wavelength is 400 nm or less.
  • the first stage of irradiation is performed with weak irradiation that does not lead to complete decomposition of the metal organic compound.
  • a method for producing a metal oxide was proposed in which strong irradiation that can be changed to an oxide was performed (Patent Document 4).
  • this production method is also intended to produce a general metal oxide crystal thin film as described above. It was shown in the figure, and nothing was mentioned about how a tin oxide transparent conductive film excellent in conductivity can be efficiently produced.
  • the solid-phase method by coating pyrolysis has a problem that it requires a higher temperature than the gas-phase method and firing at a high temperature of 450 ° C or higher is essential.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2002_146536
  • Patent Document 2 Japanese Patent Publication No. 2000-81952
  • Patent Document 3 Patent 2759125 Specification
  • Patent Document 4 Japanese Patent Laid-Open No. 2001-31417
  • Non-Patent Document 1 Takanori Muto, Shigemasa Furuuchi: Applied Physics, 41, 134-142 (1972)
  • Non-Patent Document 2 Kunihiko Adachi, Mamoru Mizuhashi: Imports Res. Lab. Asahi Glasee Co. Ltd., 38, 57 (1
  • Non-Patent Document 3 A. Tsunami, H. Yoshimizu,. Odaira, S. Shimada, T. Matsushita, Mat. Res. Bull., 21 (1986) 2731
  • Non-Patent Document 4 C. Terrier, J. P. Chatelon, A. Roger and R. Berjoan, Thin Solid Films, 2 63, 37-41 (1995)
  • An object of the present invention is to provide an efficient method for producing a tin oxide transparent conductive film capable of low-temperature growth and exhibiting extremely high conductivity.
  • the present inventors used a precursor solution having fluorine and tin in the molecule as a raw material solution, and applied and dried this onto a substrate. Later, by adopting a unique process such as replacing part of the heat treatment process in the coating pyrolysis method with ultraviolet light (laser) irradiation, a tin oxide thin film showing high conductivity can be obtained at low temperature and high speed.
  • a unique process such as replacing part of the heat treatment process in the coating pyrolysis method with ultraviolet light (laser) irradiation, a tin oxide thin film showing high conductivity can be obtained at low temperature and high speed.
  • the patterning required for the device can be performed simultaneously with the film formation by precisely controlling the use of the mask and the irradiation position of the ultraviolet light, and has completed the present invention.
  • Process 1 Process of forming a thin film by applying and drying a precursor solution containing fluorine and tin on a substrate
  • Process 2 The first light irradiation process to irradiate the thin film obtained in Process 1 with ultraviolet rays
  • Process 3 Process of heat-treating the thin film obtained in Process 2
  • Process 4 Second light irradiation process to irradiate the thin film obtained in Process 3 with ultraviolet rays
  • Process 3 and process 4 are performed simultaneously or stepwise, The method for producing a tin oxide transparent conductive film according to the above ⁇ 1>.
  • Steps 2 to 4 are all carried out at 25 ° C.
  • a tin oxide transparent conductive film excellent in durability and conductivity can be produced industrially advantageously with good efficiency at low temperatures.
  • the method for producing a tin oxide transparent conductive film of the present invention includes the following steps.
  • Process 1 Process of forming a thin film by applying and drying a precursor solution containing fluorine and tin on a substrate
  • Process 2 The first light irradiation process to irradiate the thin film obtained in Process 1 with ultraviolet rays
  • Process 3 Process of heat-treating the thin film obtained in Process 2
  • Process 4 Second light irradiation process to irradiate the thin film obtained in Process 3 with ultraviolet rays
  • step 1 a precursor solution containing fluorine and tin is applied on a substrate and dried to form a thin film of this precursor solution.
  • This thin film will eventually become a conductive tin oxide thin film crystal through subsequent processing steps.
  • a substrate having excellent heat resistance and transparency examples include glass substrates, metal oxide substrates such as silicon oxide and titanium oxide, plastic substrates such as polycarbonate resins, polyethylene terephthalate resins, polyethersulfone resins, and polyacrylate resins, strontium titanate (SrTiO ), Lantern alumine
  • AlO magnesium oxide
  • MgO magnesium oxide
  • Nium (Sr) (A1 Ta) 0), Neodymium gallate (NdGaO), Yttrium aluminate (
  • YA10 aluminum oxide (A1 0), yttria-stabilized zirconium oxide ((Zr, Y) 0, YSZ), oxidation
  • Examples include polycrystalline and single crystal substrates such as compound semiconductor substrates such as 3 2 3 2 titanium (TiO 2).
  • the precursor solution containing fluorine and tin provided on the substrate may be any one containing fluorine and tin and forming a conductive tin oxide thin film crystal by a subsequent processing step.
  • One of the typical precursor solutions is a solution containing an organotin compound having fluorine in the molecule.
  • organotin compounds having fluorine in the molecule include tin / 3-diketonates, tin salts of organic acids or tin alkoxides, and those containing fluorine in the molecule.
  • organic tin compounds include hexafluoropentadionate tin (11), bis-pentafluorophenyldimethyltin, di-n-butyldifluoros, trisic.
  • One of other typical precursor solutions is a solution containing a mixture of a fluorine compound and an organotin compound.
  • fluorine compound trifluoroacetic acid, pentafluoropropionic acid, 2-fluorotoluene and the like are used.
  • organotin compounds include tin compounds such as tin / 3-diketonate, tin salts of organic acids or tin alkoxides.
  • the weight ratio of fluorine compound / organotin compound is 1: 5.
  • a solvent that can be dissolved such as an organotin compound, may be used. preferable.
  • solvents examples include hydrocarbons such as hexane, octane, benzene, tolylene, tetralin and the like, hydrocarbons such as acetylacetone, methanol, ethanol, propanol, amines, pyridine, Organic acids such as acetic acid and propionic acid, and esters such as butyl acetate can be used. These organic solvents can be used singly or in combination of two or more depending on the type of organotin compound used.
  • a solution of tin / 3-diketonate, tin salt of organic acid or tin alkoxide and containing fluorine in the molecule is applied onto the substrate. Then, a thin film layer is formed on the substrate.
  • a solution coating method is used, and various conventionally known methods such as a dipping method, a spray method, an ink jet method, a brush coating method, and a spin coating method can be used.
  • step 1 in order to dry the formed coated thin film, the formed coated thin film is allowed to stand for a certain period of time, for example, in a temperature atmosphere of about room temperature or higher or in a slightly heated atmosphere. Is done.
  • the coated thin film formed on the substrate is dried at room temperature or under heating. For example, after raising the temperature to 150 ° C over 15 minutes at a rate of 10 ° C / min in air, holding at that temperature for 15 minutes, then cooling the furnace.
  • the thickness of the film formed on the substrate can ultimately be in the range of lnm to about 10 m.
  • step 2 of the present invention the coated thin film obtained in step 1 is irradiated with ultraviolet rays. This first ultraviolet irradiation is performed to perform partial decomposition and patterning of organic functions while avoiding abrasion of the thin film.
  • This primary light irradiation step can be performed at the heating temperature of the pre-heat treatment step, for example, Since heating causes an evaporation reaction of the metal organic compound and changes the thickness of the film, it is preferably performed at room temperature.
  • the ultraviolet irradiation time can be changed depending on the irradiation repetition rate, for example, 30 seconds at 25 Hz and 15 seconds at 50 Hz. It is.
  • the wavelength, light intensity, repetition rate (pulsed or continuous) substrate temperature and atmosphere in Step 2 are appropriately selected according to the type of the target thin film.
  • the wavelength of the ultraviolet light is not particularly limited, but is preferably 400 nm or less, and it may be a laser light or lamp light.
  • the light source used for light irradiation may be either an ultraviolet laser or an ultraviolet lamp, but an ultraviolet laser XeF (351 nm), XeCl (308 nm), rF (248 nm), ArF (193 nm), which has little heating effect, It is preferable to use an excimer laser such as F2 (157 nm), YAG laser (fourth harmonic: 266 nm), or Ar ion laser (second harmonic: 257 nm)!
  • an excimer laser such as F2 (157 nm), YAG laser (fourth harmonic: 266 nm), or Ar ion laser (second harmonic: 257 nm)!
  • a KrF (248 nm) laser is suitable as a light source for applying a refractive optical system using a lens.
  • step 3 of the present invention the thin film obtained in step 2 is heat-treated. If this heat treatment step is not performed, a thin film exhibiting high conductivity is not formed even if the final process is performed, and thus the intended purpose of the present invention cannot be achieved.
  • the temperature of the heat treatment step is 25 to 600 ° C, preferably 25 to 300 ° C, more preferably 25 to 150 ° C, in order to achieve the above object.
  • the heat treatment temperature was less than 25 ° C, conductivity was shown by subsequent irradiation, but a highly conductive film was not formed. Also, if the temperature exceeds 600 ° C, it is not preferable because the conductivity decreases due to the decomposition of fluorine and the glass substrate melts.
  • step 4 of the present invention the thin film obtained in step 3 is irradiated with ultraviolet rays. This second ultraviolet irradiation is performed in order to improve the conductivity of the thin film. If this second ultraviolet irradiation is not performed, the film is not crystallized, so that the conductivity is low, and the intended purpose of the present invention cannot be achieved.
  • This secondary light irradiation step is preferably performed at room temperature in order to prevent the decomposition of fluorine by force heating that can be performed at 25 to 600 ° C.
  • the UV irradiation time is 10 seconds in the case of 1 Hz repetition frequency.
  • the wavelength, light intensity, repetition rate (pulsed or continuous) substrate temperature, and atmosphere in Step 4 are appropriately selected according to the type of target thin film.
  • the wavelength of the ultraviolet light is not particularly limited, but is preferably 400 nm or less, and may be pulsed laser light or lamp light.
  • the light source used for light irradiation may be either an ultraviolet laser or an ultraviolet lamp, but an ultraviolet laser XeF (351 nm), XeCl (308 nm), rF (248 nm), ArF (193 nm), which has little heating effect, It is preferable to use an excimer laser such as F2 (157 nm), YAG laser (fourth harmonic: 266 nm), or Ar ion laser (second harmonic: 257 nm)! Since the transmittance of the optical material decreases as the wavelength becomes shorter, a KrF (248 nm) laser is suitable as a light source for applying a refractive optical system using a lens.
  • an excimer laser such as F2 (157 nm), YAG laser (fourth harmonic: 266 nm), or Ar ion laser (second harmonic: 257 nm)! Since the transmittance of the optical material decreases as the wavelength becomes shorter, a KrF (248 nm) laser is suitable as
  • Step 3 and step 4 of the present invention may be performed stepwise or individually, but can also be performed simultaneously in view of simplification of the process step.
  • the heat treatment process of step 3 is a process of irradiating ultraviolet rays having a high repetition frequency, a high energy density, and an energy density without using a heat treatment method using an ordinary electric furnace.
  • a non-equilibrium heating effect is produced in the tin oxide film region for several nanoseconds. Therefore, step 3 can be performed in the initial stage of ultraviolet irradiation.
  • the crystallization reaction in step 4 is also promoted.
  • a soot oxide transparent conductive film excellent in durability and conductivity can be produced efficiently and advantageously industrially at low temperatures.
  • the crystallization of the thin film does not proceed until 450 ° C to 500 ° C is reached.
  • thin film crystal growth is possible at room temperature to a low temperature of 250 ° C.
  • the sheet resistance of the transparent conductive film according to the present invention shows a very small value of, for example, 300 ⁇ / port to 50 ⁇ / port.
  • the tin oxide transparent conductive film having significantly improved conductivity can be easily manufactured at a low temperature without using a large-sized device. Na! /, You can expect a new device.
  • the substrates used in the examples of the present invention are a quartz substrate and a non-alkali glass substrate, the raw material solution is tin ( ⁇ ) hexafluoropentadate solution (Sl), and ultraviolet light irradiation is A KrF excimer laser or ArF excimer laser was used.
  • Tin ( ⁇ ) hexafluoropentadionate solution was spin coated on a silicon substrate at 4000 rpm for 10 seconds.
  • ArF excimer laser was irradiated for 10 seconds at 193nm, 25Hz, 40mJm 2 at room temperature in the atmosphere.
  • 10 shots were irradiated at 90 mJ / Cm 2 and 1 Hz, and the transparent conductive film was prepared by repeating the above steps to control the film thickness.
  • the sheet resistance of the irradiated portion of this transparent conductive film was 150 ⁇ / mouth.
  • the XRD pattern of this transparent conductive film is shown in Fig. 1 (a).
  • “before irradiation” in FIG. 1 (a) means a film in a state in which tin ( ⁇ ) hexafluoropentadionate solution is spin-coated on a silicon substrate at 4000 rpm for 10 seconds.
  • a transparent conductive film was produced in the same manner as in Example 1 except that the laser was replaced with a KrF excimer laser in Example 1.
  • the sheet resistance of the irradiated portion of this transparent conductive film was 300 ⁇ / mouth.
  • Example 1 when the substrate is replaced with a TiO single crystal substrate, an epitaxial thin film is formed.
  • a transparent conductive film was obtained that grew and showed a sheet resistance of 50 ⁇ / mouth at the irradiated part.
  • Figure 2 shows the XRD pattern of this transparent conductive film.
  • (b) means a film in a state where a tin ( ⁇ ) hexafluoropentadionate solution is spin-coated on a TiO single crystal substrate at 4000 rpm for 10 seconds.
  • Example 1 when the substrate was replaced with a quartz substrate, a polycrystalline film was grown, and a transparent conductive film having a sheet resistance of 150 ⁇ / mouth at the irradiated portion was obtained.
  • Tin ( ⁇ ) hexafluoropentadionate solution was spin-coated on a quartz substrate at 4000 rpm for 10 seconds. Thereafter, a KrF (248 nm) excimer laser was irradiated for 10 seconds at 25 Hz and 25 mJm 2 at room temperature and in the atmosphere (step 2). Then at 25 ° C, lOOmJ N m 2, and irradiated for 30 seconds at 25 Hz (Step 3), followed by 10 shots irradiated with 90mJ / Cm 2, 1Hz (Step 4). In addition, a transparent conductive film was produced by repeating the above steps in order to control the film thickness. The sheet resistance of the irradiated part of this transparent conductive film was 300 ⁇ / mouth.
  • Tin ( ⁇ ) hexafluoropentadionate solution was spin-coated on a quartz substrate at 4000 rpm for 10 seconds. Thereafter, a KrF (248 nm) excimer laser was irradiated for 10 seconds at 25 Hz and 25 mJm 2 at room temperature and in the atmosphere (step 2). Next, irradiation was carried out at 25 ° C. for 1 minute at 10 mJ, m 2 and 25 Hz (steps 3 and 4). In addition, a transparent conductive film was produced by repeating the above steps in order to control the film thickness. The sheet resistance of the irradiated portion of this transparent conductive film was 200 ⁇ / mouth.
  • a transparent conductive film was produced in the same manner as in Example 5 except that the excimer laser in Example 5 was replaced with an ArF excimer laser.
  • the sheet resistance of the irradiated portion of this transparent conductive film was 250 ⁇ / mouth.
  • Example 1 a transparent conductive film was produced in the same manner as in Example 1 except that the heat treatment step was omitted.
  • the sheet resistance of the irradiated portion of this transparent conductive film was 1000 ⁇ / mouth.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

La présente invention se rapporte à un procédé de fabrication d'un film d'oxyde d'étain conducteur transparent, qui peut être créé à une faible température et qui présente une conductivité extrêmement élevée, ledit procédé comprenant une étape (1) de formation d'un film mince par revêtement et séchage d'une solution de précurseur comportant du fluor et de l'étain sur un substrat, une étape (2) de première irradiation lumineuse afin d'exposer le film mince obtenu à l'étape (1) à des rayons ultraviolets, une étape (3) de traitement thermique du film mince obtenu à l'étape (2), et une étape (4) de seconde irradiation lumineuse afin d'exposer le film mince obtenu à l'étape (3) à des rayons ultraviolets.
PCT/JP2007/068553 2006-10-02 2007-09-25 Procédé de fabrication d'un film d'oxyde d'étain conducteur transparent WO2008041551A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008537475A JP5057476B2 (ja) 2006-10-02 2007-09-25 酸化スズ透明導電膜の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006270486 2006-10-02
JP2006-270486 2006-10-02

Publications (1)

Publication Number Publication Date
WO2008041551A1 true WO2008041551A1 (fr) 2008-04-10

Family

ID=39268412

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/068553 WO2008041551A1 (fr) 2006-10-02 2007-09-25 Procédé de fabrication d'un film d'oxyde d'étain conducteur transparent

Country Status (2)

Country Link
JP (1) JP5057476B2 (fr)
WO (1) WO2008041551A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009277640A (ja) * 2007-10-10 2009-11-26 Asahi Kasei Corp 透明導電膜の形成方法
WO2024070844A1 (fr) * 2022-09-29 2024-04-04 富士フイルム株式会社 Procédé de production d'un film électroconducteur et procédé de production d'un corps de protection contre les ondes électromagnétiques

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101557575B1 (ko) 2014-03-17 2015-10-05 아주대학교산학협력단 투명 금속산화물 전도체 및 이의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314714A (ja) * 1987-06-18 1988-12-22 Matsushita Electric Ind Co Ltd 透明導電膜の製造方法
JPH03219503A (ja) * 1990-01-24 1991-09-26 Matsushita Electric Ind Co Ltd 透明電極用保護膜形成液
JPH1160278A (ja) * 1997-08-07 1999-03-02 Asahi Glass Co Ltd 透明導電膜形成方法
JP2003016857A (ja) * 2001-06-28 2003-01-17 Fuji Xerox Co Ltd 基材上に設けた透明導電膜を低抵抗化する方法。

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4170639B2 (ja) * 2002-02-26 2008-10-22 株式会社アルバック 低抵抗透明導電膜の製造法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314714A (ja) * 1987-06-18 1988-12-22 Matsushita Electric Ind Co Ltd 透明導電膜の製造方法
JPH03219503A (ja) * 1990-01-24 1991-09-26 Matsushita Electric Ind Co Ltd 透明電極用保護膜形成液
JPH1160278A (ja) * 1997-08-07 1999-03-02 Asahi Glass Co Ltd 透明導電膜形成方法
JP2003016857A (ja) * 2001-06-28 2003-01-17 Fuji Xerox Co Ltd 基材上に設けた透明導電膜を低抵抗化する方法。

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009277640A (ja) * 2007-10-10 2009-11-26 Asahi Kasei Corp 透明導電膜の形成方法
WO2024070844A1 (fr) * 2022-09-29 2024-04-04 富士フイルム株式会社 Procédé de production d'un film électroconducteur et procédé de production d'un corps de protection contre les ondes électromagnétiques

Also Published As

Publication number Publication date
JPWO2008041551A1 (ja) 2010-02-04
JP5057476B2 (ja) 2012-10-24

Similar Documents

Publication Publication Date Title
JP3997731B2 (ja) 基材上に結晶性半導体薄膜を形成する方法
JP4258536B2 (ja) 結晶化金属酸化物薄膜の製造方法
US8932495B1 (en) Transparent conductor materials and processes for forming such materials
CN109713100B (zh) 一种制备全无机钙钛矿发光二极管活性层的方法
JP5219109B2 (ja) 超電導材料の製造方法
JP4110752B2 (ja) 基材上に設けた透明導電膜を低抵抗化する方法。
TWI709532B (zh) Ｐｚｔ鐵電體膜之形成方法
WO2008041551A1 (fr) Procédé de fabrication d'un film d'oxyde d'étain conducteur transparent
Ding et al. Evaluation of structural properties of AZO conductive films modification using low-temperature ultraviolet laser annealing
JP2000031463A (ja) 透明電極の形成方法
TW201231404A (en) Composition for production of oxide thin films and method for producing oxide thin films by using said composition
TWI312545B (en) Method of enhancing laser crystallization for poly-silicon fabrication
JP4377003B2 (ja) 透明導電膜のシート抵抗値の調整方法及び透明導電膜の形成方法
JP4705340B2 (ja) 酸化インジウム膜の製造方法
KR101992480B1 (ko) 저온 용액공정을 이용한 산화물 반도체의 제조방법 및 산화물 반도체
JP4522566B2 (ja) 透明導電膜のシート抵抗値の調整方法
JP4096529B2 (ja) アニール装置
JP2010165888A (ja) 抵抗体皮膜の製造方法および抵抗体皮膜
JP4292759B2 (ja) 基材上に酸化チタン光触媒薄膜を形成する方法
JP2000285752A (ja) 透明電極及びその形成方法
JP2006016273A (ja) 噴霧熱分解法による成膜装置
JP2020076153A (ja) 導電性部材の製造方法
TWI306838B (fr)
JP2010070400A (ja) 酸素欠損部を含む高光活性チタニアの製造方法
JPH0869809A (ja) 真空紫外光を用いたｙｓｚ薄膜の合成方法およびその装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07807825

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008537475

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE