WO2007119954A1 - Preparing method for organic thin layer of organic light emitting devices using electrochemical deposition - Google Patents
Preparing method for organic thin layer of organic light emitting devices using electrochemical deposition Download PDFInfo
- Publication number
- WO2007119954A1 WO2007119954A1 PCT/KR2007/001721 KR2007001721W WO2007119954A1 WO 2007119954 A1 WO2007119954 A1 WO 2007119954A1 KR 2007001721 W KR2007001721 W KR 2007001721W WO 2007119954 A1 WO2007119954 A1 WO 2007119954A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic thin
- light emitting
- thin layer
- emitting device
- organic
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004070 electrodeposition Methods 0.000 title claims abstract description 43
- 150000001875 compounds Chemical class 0.000 claims abstract description 70
- FBTOLQFRGURPJH-UHFFFAOYSA-N 1-phenyl-9h-carbazole Chemical group C1=CC=CC=C1C1=CC=CC2=C1NC1=CC=CC=C12 FBTOLQFRGURPJH-UHFFFAOYSA-N 0.000 claims abstract description 21
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 28
- 239000002904 solvent Substances 0.000 claims description 23
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 16
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 15
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 14
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 239000003792 electrolyte Substances 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- PHXQIAWFIIMOKG-UHFFFAOYSA-N NClO Chemical compound NClO PHXQIAWFIIMOKG-UHFFFAOYSA-N 0.000 claims description 8
- 230000005525 hole transport Effects 0.000 claims description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 claims description 6
- 125000005842 heteroatom Chemical group 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000005647 linker group Chemical group 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 5
- 125000000623 heterocyclic group Chemical group 0.000 claims description 5
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 4
- 229910013188 LiBOB Inorganic materials 0.000 claims description 2
- 229910013075 LiBF Inorganic materials 0.000 claims 1
- 229910013872 LiPF Inorganic materials 0.000 claims 1
- 101150058243 Lipf gene Proteins 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 26
- 230000015572 biosynthetic process Effects 0.000 abstract description 21
- 230000003628 erosive effect Effects 0.000 abstract description 12
- 238000002360 preparation method Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 124
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- 238000003786 synthesis reaction Methods 0.000 description 13
- 238000002484 cyclic voltammetry Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000004528 spin coating Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 125000004122 cyclic group Chemical group 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- XSDKKRKTDZMKCH-UHFFFAOYSA-N 9-(4-bromophenyl)carbazole Chemical compound C1=CC(Br)=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 XSDKKRKTDZMKCH-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- -1 bicyclic aromatic organic compound Chemical class 0.000 description 4
- JANCCRMYGITTKD-UHFFFAOYSA-N dichloro(cyclopentyl)silane Chemical compound Cl[SiH](Cl)C1CCCC1 JANCCRMYGITTKD-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- SWJPEBQEEAHIGZ-UHFFFAOYSA-N 1,4-dibromobenzene Chemical compound BrC1=CC=C(Br)C=C1 SWJPEBQEEAHIGZ-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
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- 238000002474 experimental method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229940073584 methylene chloride Drugs 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OJAJSXUQPFAGQH-UHFFFAOYSA-N 2-bromo-1-phenyl-9h-carbazole Chemical compound BrC1=CC=C(C2=CC=CC=C2N2)C2=C1C1=CC=CC=C1 OJAJSXUQPFAGQH-UHFFFAOYSA-N 0.000 description 2
- GZSUIHUAFPHZSU-UHFFFAOYSA-N 9-ethyl-2,3-dihydro-1h-carbazol-4-one Chemical compound C12=CC=CC=C2N(CC)C2=C1C(=O)CCC2 GZSUIHUAFPHZSU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 150000002642 lithium compounds Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 125000006413 ring segment Chemical group 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 0 *[Si](c(cc1)ccc1-[n]1c2ccccc2c2c1cccc2)(c(cc1)ccc1-[n]1c2ccccc2c2c1cccc2)c1cc(N(c2ccccc2)c2cccc3c2cccc3)cc(N(c2ccccc2)c2cccc3c2cccc3)c1 Chemical compound *[Si](c(cc1)ccc1-[n]1c2ccccc2c2c1cccc2)(c(cc1)ccc1-[n]1c2ccccc2c2c1cccc2)c1cc(N(c2ccccc2)c2cccc3c2cccc3)cc(N(c2ccccc2)c2cccc3c2cccc3)c1 0.000 description 1
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- RKMDMBOJNGYRIO-UHFFFAOYSA-N 5,5-dichloropent-1-enylsilane Chemical compound ClC(CCC=C[SiH3])Cl RKMDMBOJNGYRIO-UHFFFAOYSA-N 0.000 description 1
- YSXGPLDCYLRDNV-UHFFFAOYSA-N 6,6-dichlorohexylsilane Chemical compound [SiH3]CCCCCC(Cl)Cl YSXGPLDCYLRDNV-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910013063 LiBF 4 Inorganic materials 0.000 description 1
- 229910013684 LiClO 4 Inorganic materials 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 125000003739 carbamimidoyl group Chemical group C(N)(=N)* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000003113 dilution method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- ZMZIEZHJTIVGGP-UHFFFAOYSA-N diphenylmethanone;potassium Chemical compound [K].C=1C=CC=CC=1C(=O)C1=CC=CC=C1 ZMZIEZHJTIVGGP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004446 heteroarylalkyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- 125000001712 tetrahydronaphthyl group Chemical group C1(CCCC2=CC=CC=C12)* 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- DWAWYEUJUWLESO-UHFFFAOYSA-N trichloromethylsilane Chemical compound [SiH3]C(Cl)(Cl)Cl DWAWYEUJUWLESO-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1007—Non-condensed systems
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- C—CHEMISTRY; METALLURGY
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1011—Condensed systems
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1096—Heterocyclic compounds characterised by ligands containing other heteroatoms
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Definitions
- the invention relates to a method for preparing an organic thin layer of organic light emitting device using electrochemical deposition and more particularly, to a method for preparing an organic thin layer of organic light emitting device that has simple process by virtue of the use of monomolecular compounds that are easily purchased and prepared, has high productivity, makes it easy to control the thickness of thin layers to be prepared and has excellent adhesion to substrates and further, fundamentally improves erosion that may occur in a firstly-formed organic thin layer during the process of formation of a second organic thin layer especially when two or more organic thin layers are to be prepared in OLED devices and has excellent morphology stability, and an organic light emitting device prepared by the same method.
- Background Art
- OLED organic light emitting devices
- General organic EL devices have a structure of an anode which is formed on the top of a substrate, a light emitting layer in the form of an organic thin film which is formed on the anode, and a cathode formed thereon in sequence. Further, they may have a hole injection layer or hole transport layer between the anode and the light emitting layer, or they may have a electron transport layer or electron injection layer between the light emitting layer and the cathode.
- the hole injection layer, hole transport layer, electron transport layer and electron injection layer are organic thin layers consisting of organic compounds.
- Such organic thin layers are formed through vacuum heat deposition, sputtering or spin coating.
- the vacuum heat deposition or sputtering requires expensive equipments and has low productivity
- the spin coating involves the problem that when two or more organic thin layers are formed, the previously-formed lower layer is melted by solvents in the process of spin coating of upper layer.
- the present invention provides a method for preparing an organic thin layer of organic light emitting device comprising one or more organic thin layers between an anode and cathode, characterized in that the organic thin layer is formed by electrochemical deposition of a compound having bis(phenylcarbazol) group in molecule.
- the compound having bis(phenylcarbazol) group in molecule is represented by formula 1 :
- the invention provides the organic thin layer of organic light emitting device prepared by the above method. [13] Also, the invention provides an organic light emitting device comprising the organic thin layer prepared by the above method. [14] Also, the invention comprises a display device comprising the above organic light emitting device.
- the method for preparation of the organic thin layer of organic light emitting device through electrochemical deposition according to the invention has simple process by virtue of the use of monomolecular compounds that are purchased or easily prepared without requiring special equipments, has high productivity, can make it easy to control the thickness of thin layers to be prepared and can fundamentally improve erosion of the pre-formed organic thin layers that occurred in the preparation of two or more organic thin layers by spin coating.
- the organic thin layers in accordance with the invention have excellent adhesion to substrates, have uniform surface because their thickness can be adjusted at molecular level, and have excellent morphology stability and especially, in case of the organic thin layers formed through consecutive electrochemical deposition of two or more layers, interfaces between layers are even, erosion due to solvents does not occur, adhesion between interfaces is strong and they have fine patterns. Moreover, as they are not melted in most organic solvents, erosion due to solvents can be fundamentally reduced even in case of forming organic thin layers by known spin coating on the organic thin layers in accordance with the invention. Brief Description of the Drawings
- Fig. 1 is a cyclic voltammonogram showing electrochemical deposition by a compound having bis(phenylcarbazol) group in a molecule according to an embodiment of the present invention.
- Fig. 2 is a cyclic voltammonogram showing electrochemical deposition by a compound having bis(phenylcarbazol) group in a molecule according to another embodiment of the invention.
- Fig. 3 is a cyclic voltammonogram showing electrochemical deposition by a compound having bis(phenylcarbazol) group in a molecule according to still another embodiment of the invention.
- Fig. 4 is a cyclic voltammonogram showing electrochemical deposition by a compound having one phenylcarbazol group in a molecule according to comparative example of the invention.
- Fig. 5 is a cyclic voltammonogram showing electrochemical deposition by a compound having bis (phenylcarbazol) group in a molecule according to another embodiment of the invention.
- Fig. 6 is a cyclic voltammonogram showing electrochemical deposition by a compound having bis (phenylcarbazol) group in a molecule according to still another embodiment of the invention.
- organic thin layers could be formed using electrochemical deposition by compounds having bis(phenylcarbazol) group in molecules as monomolecular compounds having small molecular weight and have thus completed the invention.
- the present invention is directed to a method for preparing an organic thin layer of organic light emitting device comprising one or more organic thin films between anode and cathode characterized in that the organic thin layer is formed by electrochemical deposition of a compound having bis(phenylcarbazol) group in molecule.
- the compound is a compound represented by the above formula 1 or one with two phenyl carbazol groups linked directly.
- the divalent linking group, -X- is not limited to specific ones as long as phenyl carbazol groups can be bound to its both ends, and -SiR R -, -PR -, -NR
- R to R are each independently a substituted or unsubstituted alkyl group of C -C , substituted or unsubstituted aryl group of C -C , substituted or unsubstituted hetero ring group of C -C , or substituted or unsubstituted heterocyclic ring group of C -C .
- alkyl group of C -C include methyl, ethyl, propyl, isobutyl, sec-butyl, pentyl, iso-amyl, hexyl and so on, and one or more hydrogen atoms of the alkyl group may be substituted by a halogen atom, hydroxyl group, nitro group, cyano group, amino group, amidino group, hydrazine, hydrozone, carboxyl group or salt thereof, sulfonic acid group or salt thereof, phosphoric acid or salt thereof, indole, azaindole, alkyl group of C -C , alkenyl group of C -C , alkynyl group of C -C , aryl group of C -C , arylalkyl group of C -C , heteroaryl group of C -C , or het- eroarylalkyl group of C -C and of them
- the unsubstituted aryl group in above refers to a carbocycle aromatic system of C -
- the aryl includes aromatic radicals such as phenyl, naphthyl and tetrahydronaphthyl and one or more hydrogen atoms of the aryl group may be substituted by the same substituents as enumerated for the alkyl group.
- the unsubstituted hetero ring group refers to a monovalent monocyclic or bicyclic aromatic organic compound of 6 to 50 ring atoms containing 1, 2 or 3 hetero atoms selected from N, O, P or S and having C as remaining ring atoms.
- One or more hydrogen atoms of the hetero aryl group may be substituted by the same substituents as enumerated for the alkyl group.
- the unsubstituted heterocyclic ring group refers to a ring type moiety formed by the fusion of two or more rings constituting the aryl group or hetero ring as defined above and one or more hydrogen atoms of the heterocyclic ring group may be substituted by the same substituents as enumerated for the alkyl group.
- n is an integer of 1 to 3
- R is each independently a hydrogen atom or methyl
- electrochemical deposition refers to a method of forming organic thin layers by putting substrates to be deposited into a reaction vessel where the above compounds forming the organic thin layers which are intended to deposit and electrolytes are dissolved and depositing the compounds intended to deposit onto the substrates to be deposited by application of power.
- the compounds forming the organic thin layers which are intended to deposit can be chosen among the above described compounds, depending on the organic thin layers to be formed on the substrates to be deposited, and the organic thin layer is one of the organic layers formed between anode and cathode and can be a hole injection layer (HIL), hole transport layer (HTL), emitting layer (EML), hole blocking layer (HBL), electron transport layer (ETL) or electron injection layer (EIL).
- HIL hole injection layer
- HTL hole transport layer
- EML hole blocking layer
- ETL electron transport layer
- EIL electron injection layer
- Any solvents capable of dissolving the electrolytes and the compounds intended to deposit can be used in the above reaction vessel and as specific examples, there are dichloromethane (CH Cl ), tetrahydrofuran (THF), acetonitrile (CH CN), benzonitrile (C H CN), propylene carbonate (1,2-propanediol cycliccarbonate), and toluene (C H
- the amount of the solvents to be used is preferably 0.01 to 10 mM on the basis of the concentration of the compounds. If the concentration is too thin, there is a possibility that the electrochemical deposition is not performed properly and if it is too thick, problems may happen in connection with the control of the electrochemical deposition film thickness and voltage drop.
- the electrolytes that can be used in the reaction vessel are dissolved in the above solvents and they are not limited to specific ones as long as they are able to ionize the compounds intended to deposit when power is applied, and as specific examples, there are Me NBF , Et NBF , Pr NBF , Bu NBF , Me NClO , Et NClO , Pr NClO , Bu NClO 4 , Me 4 NPF 6 , Et 4 NPF 6 , Pr 4 NPF 6 , Bu 4 NPF 6 , LiClO 4 , LiBF 4 , LiPF 6 , and LiBOB.
- the concentration of the supporting electrolytes is preferably 50 mM to 500 mM. If the concentration of the electrolytes is too thin, such problems as voltage drop may happen.
- any conventional substrates used to form organic thin layers in OLED devices can be used.
- they can be a substrate with anode formed thereon; or a substrate on which anode and at least one layer from hole injection layer (HIL), hole transport layer (HTL), emitting layer (EML), hole blocking layer (HBL) and electron transport layer (ETL) are deposited in sequence.
- HIL hole injection layer
- HTL hole transport layer
- EML emitting layer
- HBL hole blocking layer
- ETL electron transport layer
- any substrates used in common organic EL devices can be employed as the substrates and it is preferable to use organic substrates or clear plastic substrates with excellent clearness, surface flatness, easy handling and waterproof.
- ITO indium tin oxide
- IZO indium zinc oxide
- SnO tin oxide
- ZnO zinc oxide
- the one or more organic layers among the hole injection layer (HIL), hole transport layer (HTL), emitting layer (EML), hole blocking layer (HBL) and electron transport layer (ETL) to be formed on the substrates to be deposited can be formed by known methods or by the electrochemical deposition of the invention.
- the above organic layers are formed using the electrochemical deposition of the invention.
- the electrochemical deposition is preferably used to form the organic thin layers in this step.
- the cathode can be formed by any known methods and for example, the cathode can be formed by vacuum heat deposition of or sputtering metals for the formation of cathode.
- metals for the formation of cathode there can be used lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium- silver (Mg-Ag) and the like.
- clear substances such as ITO or IZO can be used as cathode.
- HIL hole injection layer
- HTL hole transport layer
- EML emitting layer
- HBL hole blocking layer
- ETL electron transport layer
- EIL electron injection layer
- the thickness of the organic thin layers formed through the electrochemical deposition in accordance with the present invention can be adjusted by power cycle control, depending on the required level and it is preferably 10 to 1,000 D and more preferably, 20 to 150 D.
- power is applied preferably using CV (cyclic voltammetry). Voltage is applied in the range of voltage within potential window showing no oxidation-reduction of solvents or electrolytes or electrodes, and when CV is used, although there are slight variations in each compound, voltage is scanned starting from 0.30 V vs S.C.E. up to 1.65(+0.1) V vs S.C.E. at a voltage scan rate of 0.1 V/s and returned to 0.30 V vs S.C.E.
- CV cyclic voltammetry
- electrochemical deposition proceeds.
- the thickness of thin layers of compounds can be adjusted by varying the number of cycles, the concentration of the compounds, voltage scan rate, voltage scan range and so on.
- washing step or dry step can be further carried out, if required.
- electrolyte substances that might be present on the organic thin layers, and those used as the solvent component of the reaction vessel are preferably used as the washing solution.
- the dry step is not limited to specific ones, and any known dry methods that can be carried out after the formation of known organic thin layers of organic light emitting devices can be applied.
- the concentration of the compound of the above formula can be 0.5 mM and the concentration of the electrolyte can be 0.1 M.
- the substrate to be deposited can be a glass substrate with ITO as anode deposited thereon, a substrate of the glass substrate-ITO-hole injection layer being laminated in order, or a substrate of the glass substrate-ITO-hole injection layer- hole transport layer being laminated in order.
- the compound dissolved in the reaction vessel is deposited onto the substrate to be deposited and the thickness to be deposited can be adjusted by the number of cycles of CV (cyclic voltammetry).
- the substrate deposited with the above compound may be further deposited with one or more organic thin layers such as electron transport layer and electron injection layer, if necessary, after washing and dry and then, cathode is formed on the organic layers through vacuum heat deposition or sputtering, thereby completing an organic light emitting device.
- the method for preparation of the organic thin layer of organic light emitting device through electrochemical deposition according to the invention has simple process by virtue of the use of monomolecular compounds that are purchased or easily prepared without requiring special equipments, has high productivity, can make it easy to control the thickness of thin layers to be prepared and can fundamentally improve erosion of the pre-formed organic thin layers that occurred in the preparation of two or more organic thin layers by spin coating.
- the invention provides the organic thin layers of organic light emitting device prepared by the electrochemical deposition and organic light emitting devices comprising the organic thin layers as well.
- the organic thin layers have excellent adhesion to substrates, have uniform surface because their thickness can be adjusted at molecular level, and have excellent morphology stability and especially, in case of the organic thin layers formed through consecutive electrochemical deposition of two or more layers, interfaces between layers are even, erosion due to solvents does not occur, adhesion between interfaces is strong and they have fine patterns.
- the organic thin layers in accordance with the invention are not melted in most organic solvents, erosion due to solvents can be fundamentally reduced even in case of forming organic thin layers by known spin coating.
- BAS 100 electrochemical analyzer was used for the CV experiment.
- Three-electrode system - glassy carbon as a working electrode, platinum electric wire as a counter electrode and silver electric wire as a reference electrode - was used.
- Methylene chloride that is neat, distilled and degassed was used as a solvent and 0.1 M tetra-normal-butylammonium hexafluorophosphate was used as an electrolyte.
- Normal-butyllithium diluted in 1,4-dibromobenzene 2.5 M hexane was purchased from Aldrich Co., Ltd. and used without further purification.
- Teflon magnetic stir bar 1,4-dibromobenzene (25.184 g, 200 mmol), carbazol (8.36 g, 50 mmol), K CO (13.82 g, 100 mmol), and CuSO (7.98 g, 50 mmol) were put in a 100-mL one-neck flask and stirred at 210 0 C for 16 hours without solvents. After the completion of the reaction, the mixture was diluted with methylenechloride and filtered and then, the filtered solution was washed with distilled water and brine. The thus obtained organic layer was dehydrated using MgSO .
- Bromophenylcarbazol was converted into an organic lithium compound in tetrahydrofuran (THF) solvent using normal-butyllithium at -78 0 C and then reacted with trichlorosilane, dimethyldichloridesilane, and trichloromethylsilane to synthesize mono-, bis-, tirs-(9-(phenylcarbozol)) (Compound 4-6), respectively with yields of 40-75%.
- Compound 5 and Compound 6 were separated through silica gel column and Compound 4 could be obtained by re- crystallization using ether without separation with column.
- the method for preparation of the organic thin layer of organic light emitting device through electrochemical deposition according to the invention has simple process by virtue of the use of monomolecular compounds that are purchased or easily prepared without requiring special equipments, has high productivity, can make it easy to control the thickness of thin layers to be prepared and can fundamentally improve erosion of the pre-formed organic thin layers that occurred in the preparation of two or more organic thin layers by spin coating.
- the organic thin layers in accordance with the invention have excellent adhesion to substrates, have uniform surface because their thickness can be adjusted at molecular level, and have excellent morphology stability and especially, in case of the organic thin layers formed through consecutive electrochemical deposition of two or more layers, interfaces between layers are even, erosion due to solvents does not occur, adhesion between interfaces is strong and they have fine patterns. Moreover, as they are not melted in most organic solvents, erosion due to solvents can be fundamentally reduced even in case of forming organic thin layers by known spin coating on the organic thin layers in accordance with the invention.
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JP2009505292A JP5113153B2 (ja) | 2006-04-14 | 2007-04-10 | 電気化学的蒸着による有機発光素子の有機薄膜層形成方法 |
DE112007000924T DE112007000924T5 (de) | 2006-04-14 | 2007-04-10 | Verfahren zur Herstellung einer organischen Dünnschicht von organischen lichtemittierenden Vorrichtungen mittels elektrochemischer Abscheidung |
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KR1020060034296A KR101299098B1 (ko) | 2006-04-14 | 2006-04-14 | 전기화학적 증착을 통한 유기발광소자의 유기박막층형성방법 |
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CN103881067A (zh) * | 2012-12-24 | 2014-06-25 | 海洋王照明科技股份有限公司 | 一种聚合物蓝光主体材料及其制备方法与应用 |
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KR101352021B1 (ko) * | 2006-05-17 | 2014-01-15 | 주식회사 동진쎄미켐 | 분자 내 비스(페닐카바졸)기를 가지는 실리콘계 화합물 및이를 이용한 유기발광소자의 유기박막층 형성방법 |
DE102012217574A1 (de) | 2012-09-27 | 2014-03-27 | Siemens Aktiengesellschaft | Phosphoroxo-Salze als n-Dotierstoffe für die organische Elektronik |
KR102167045B1 (ko) * | 2013-12-17 | 2020-10-19 | 삼성디스플레이 주식회사 | 실란계 화합물 및 이를 포함한 유기 발광 소자 |
KR101612319B1 (ko) | 2014-08-28 | 2016-04-15 | 주식회사 네패스 | 시안계 호스트 화합물 및 이를 채용한 유기발광 소자 |
KR101775891B1 (ko) | 2014-12-23 | 2017-09-12 | 주식회사 네패스 | 질소 헤테로 고리계 호스트 화합물 및 이를 채용한 유기발광 소자 |
CN107275521A (zh) * | 2017-05-24 | 2017-10-20 | 华南理工大学 | 一种高分辨阵列有机薄膜的制备方法及其应用 |
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JP2002008860A (ja) * | 2000-04-18 | 2002-01-11 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
US6653654B1 (en) * | 2002-05-01 | 2003-11-25 | The University Of Hong Kong | Electroluminescent materials |
EP1480281A2 (en) * | 2003-05-22 | 2004-11-24 | Samsung SDI Co., Ltd. | Electroluminescent display device |
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JPH0845668A (ja) * | 1994-07-27 | 1996-02-16 | Casio Comput Co Ltd | 電界発光素子の製造方法 |
JPH0997679A (ja) * | 1995-09-28 | 1997-04-08 | Casio Comput Co Ltd | 電界発光素子の製造方法 |
KR100522697B1 (ko) * | 2003-09-22 | 2005-10-20 | 삼성에스디아이 주식회사 | 4,4'-비스(카바졸-9-일)-비페닐계 실리콘 화합물 및 이를이용한 유기 전계 발광 소자 |
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JPH10168443A (ja) * | 1996-12-17 | 1998-06-23 | Sanyo Shinku Kogyo Kk | 有機発光素子の正孔または電子輸送層等に用いられるフェニルカルバゾール誘導体 |
JP2002008860A (ja) * | 2000-04-18 | 2002-01-11 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
US6653654B1 (en) * | 2002-05-01 | 2003-11-25 | The University Of Hong Kong | Electroluminescent materials |
EP1480281A2 (en) * | 2003-05-22 | 2004-11-24 | Samsung SDI Co., Ltd. | Electroluminescent display device |
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CN103881067A (zh) * | 2012-12-24 | 2014-06-25 | 海洋王照明科技股份有限公司 | 一种聚合物蓝光主体材料及其制备方法与应用 |
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DE112007000924T5 (de) | 2009-09-03 |
JP5113153B2 (ja) | 2013-01-09 |
JP2009533816A (ja) | 2009-09-17 |
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