WO2007086522A1 - 太陽電池およびその製造方法 - Google Patents
太陽電池およびその製造方法 Download PDFInfo
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- WO2007086522A1 WO2007086522A1 PCT/JP2007/051303 JP2007051303W WO2007086522A1 WO 2007086522 A1 WO2007086522 A1 WO 2007086522A1 JP 2007051303 W JP2007051303 W JP 2007051303W WO 2007086522 A1 WO2007086522 A1 WO 2007086522A1
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- Prior art keywords
- layer
- laser
- light absorption
- lower electrode
- absorption layer
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000031700 light absorption Effects 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 15
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005224 laser annealing Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 4
- -1 chalcopyrite compound Chemical class 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 7
- 239000011669 selenium Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 241000652704 Balta Species 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a solar cell having an internal series connection structure and a method for manufacturing the solar cell.
- the thin film system is a solar cell having a semiconductor layer with a thickness of several tens of meters to several / zm or less, and is classified into a Si thin film system and a compound thin film system.
- compound thin film systems such as II-VI compound systems and chalcopyrite systems, and some have been commercialized so far.
- chalcopyrite solar cells belonging to the chalcopyrite system are called CIGS (Cu (InGa) Se) thin film solar cells, CIGS solar cells, or I 1 III, depending on the materials used. It is called a VI family.
- a chalcopyrite solar cell is a solar cell formed using a chalcopyrite compound as a light absorbing layer, and has high efficiency, no light degradation (aging), excellent radiation resistance, light absorption It has features such as a wide wavelength range and a high light absorption coefficient, and is currently being studied for mass production.
- FIG. 1 shows a cross-sectional structure of a typical solar cell with an internal series connection structure, taking a chalcopyrite solar cell as an example.
- the chalconolite solar cell has a lower electrode layer (Mo electrode layer) formed on a substrate (substrate) such as glass and a light absorption layer containing copper 'indium' gallium 'selenium. (CIGS light absorption layer), a high-resistance buffer layer thin film formed of InS, ZnS, CdS, etc. on the light absorption layer thin film, and an upper electrode thin film (TCO) formed of ZnOAl, etc. Is done.
- a substrate such as glass
- a high-resistance buffer layer thin film formed of InS, ZnS, CdS, etc. on the light absorption layer thin film and an upper electrode thin film (TCO) formed of ZnOAl, etc. Is done.
- soda lime glass or the like is used for the substrate
- SiO or the like is used as a main component for
- a lukari control layer is provided.
- a Mo (molybdenum) electrode to be a lower electrode is formed on a substrate such as soda lime glass by sputtering or the like.
- the Mo electrode is divided by removing it by laser irradiation or the like. (First scribe, Fig. 2 (a))
- the IJ scrap is washed with water or the like, and copper (Cu), indium (In), or gallium (Ga) is deposited by sputtering or vapor deposition to form a layer called a precursor.
- This precursor is put into a furnace and annealed at a temperature of 400 ° C to 600 ° C in an atmosphere of H Se gas.
- This annealing process is usually referred to as gas phase selenization or simply selenium.
- an n-type buffer layer such as CdS, ZnO, or InS is laminated on the light absorption layer.
- the buffer layer is generally formed by a dry process such as sputtering or a wet process such as CBD (Chemical Bath Deposition).
- CBD Certial Bath Deposition
- it is divided by removing the buffer layer and the precursor by laser irradiation, a metal needle or the like. (Second scribe, Fig. 2 (b))
- TCO Transparent Conducting Oxides
- the TCO, the noffer layer, and the precursor are removed by laser irradiation, metal needles, or the like (third scribe, FIG. 2 (d)) to obtain a CIGS thin film solar cell.
- the solar cell obtained here is called a cell that is monolithically connected in series via a unit cell force contact electrode part that also has a divided lower electrode, a divided light absorption layer, and a divided upper electrode force Forces in use
- a unit cell force contact electrode part that also has a divided lower electrode, a divided light absorption layer, and a divided upper electrode force Forces in use
- single or multiple cells are packaged and processed as modules (panels).
- a cell is a device in which a plurality of series stages are monolithically divided by performing element isolation in each scribe process, thereby changing the number of series stages (number of unit cells).
- the design of the voltage can be arbitrarily changed. This is one of the advantages of thin film solar cells.
- Mechanical scribing is a technique for mechanically scribing by moving a metal needle (needle) having a tapered tip while pressing it with a predetermined pressure. (For example, see Patent Document 1.)
- Figure 3 shows a schematic diagram in which the second scribe is performed by mechanical-scribing.
- laser scribing is performed by irradiating a light absorption layer with a laser (Nd: YAG laser, etc.) emitted by exciting an Nd: YAG crystal with a continuous discharge lamp such as an arc lamp. It is a technology to remove and divide. (For example, see Patent Document 2.)
- Patent Document 1 Japanese Patent Application Laid-Open No. 2004-115356
- Patent Document 2 Japanese Patent Laid-Open No. 11 312815
- FIG. 4 (a) is a cross-sectional SEM photograph and figure of a state in which a part of the light absorption layer is scribed using a conventional metal needle and then a TCO to be an upper electrode is formed on the top by sputtering.
- 4 (b) is a simplified illustration of the photograph of FIG. 4 (a).
- the wall surface of the light absorption layer formed by scribing has a thinner TCO than the upper surface.
- cracks have occurred in the TCO near the contact point between the wall of the light absorption layer and the upper side of the Mo electrode. If the TCO is thin or a crack occurs, the electrical resistance of that part will increase.
- Increasing the thickness of the transparent upper electrode can compensate for the lack of thickness at the part where the unit cells are connected, such as on the wall side of the light absorption layer, but the transparent upper electrode is not completely transparent, so it absorbs light. The amount of light reaching the layer is reduced and power generation conversion efficiency is reduced, and it is not practical to increase the thickness of the transparent upper electrode.
- laser scribing makes it very difficult to adjust the strength of the laser. Even if the laser strength is optimally adjusted, the laser scribing can be controlled by subtle changes in the film thickness of the light absorption layer. Since the optimal value of the strength of the machine will change, the force that can not be used in the mass production process
- a method for manufacturing a solar cell according to the present invention includes a lower electrode layer forming step for forming a lower electrode layer on the upper surface side of a substrate, and a first scribe for dividing the lower electrode layer.
- a light absorption layer forming step for forming a light absorption layer on the scribed lower electrode layer, a second scribe step for dividing the light absorption layer with a laser or a metal needle, and the second scribe step.
- a method of manufacturing a solar cell according to the present invention includes the above-described steps as a basic configuration!
- the manufacturing method of the solar cell according to the present invention includes those in which film forming processes such as a buffer layer, an alkali passivation film, an antireflection film and the like are interposed, only by these processes.
- the laser frequency of the laser annealing process is set higher than that of the laser of the first scribe process, so that the light absorption layer The end can be a gently inclined surface.
- the solar cell according to the present invention is formed by dividing into a plurality of substrates, a lower electrode layer formed on the upper surface side of the substrate, and a plurality of divided portions on top of the plurality of lower electrode layers. And a light absorbing layer having a split end formed in an inclined shape by laser annealing, a transparent upper electrode layer formed by laminating on the light absorbing layer, the upper electrode and the lower electrode And a contact electrode portion formed on an inclined end portion of the divided light absorption layer.
- the light absorbing layer is preferably a chalcopyrite compound.
- FIG. 1 is a cross-sectional view showing the structure of a conventional solar cell
- FIG.3 Diagram showing scribing with a metal needle
- FIG. 4 (a) is a cross-sectional SEM photograph of a conventional solar cell, and (b) is a trace of the SEM photograph of (a) along the layer boundary.
- FIG. 5 is a sectional view of a solar cell according to the present invention.
- FIG. 6 is a diagram illustrating a method for manufacturing a solar cell according to the present invention.
- FIG. 7 (a) is a cross-sectional SEM photograph of the solar cell according to the present invention, and (b) is a diagram obtained by tracing the SEM photograph of (a) along the layer boundary.
- FIG. 5 shows a cross section of a chalconeite solar cell according to the present invention.
- a solar cell according to the present invention includes a lower electrode layer 2 (Mo electrode layer) formed on an upper portion of a substrate 1 such as glass, and a light absorption layer thin film 3 (CIGS light absorption layer containing copper'indium / gallium / selenium). ), On the light absorption layer thin film 3, a high resistance buffer layer thin film 4 formed of InS, ZnS, CdS, etc., and an upper transparent electrode layer 5 (TCO) formed of ZnOAl, etc. A unit cell (here called “unit cell” for convenience) is formed.
- the adjacent unit cells are electrically connected to each other when the upper transparent electrode layer 5 of one unit cell is in direct contact with the other lower electrode layer 2 and the contact electrode portion 6 which is a part of the upper transparent electrode layer 5.
- the light absorption layer 3 and the buffer layer 4 are processed so that the end portions of the layers have a gently inclined shape, and therefore the upper transparent electrode layer 5 is deposited on the upper portion of the inclined shape. To reach.
- FIG. 6 shows a method for producing a chalcopyrite solar cell of the present invention.
- a Mo (molybdenum) electrode to be the lower electrode 2 is formed on the upper surface side of the substrate 1 by sputtering or the like.
- molybdenum titanium, tungsten, or the like may be used for the lower electrode 2.
- Alkali control composed of SiO, etc. between the substrate and the lower electrode
- a layer may be provided.
- the Mo electrode is divided by removing it by laser irradiation or the like.
- the laser is preferably an excimer laser with a wavelength of 248 nm or the third harmonic of a YAG laser with a wavelength of 355 nm.
- Cu copper
- In indium
- Ga gallium
- Absorbent layer thin film 3 is obtained. This annealing process is usually called gas phase selenization or simply selenium.
- a buffer layer 4 that is an n-type semiconductor such as CdS, ZnO, or InS is stacked on the light absorption layer 3.
- the nother layer 4 is generally formed by a dry process such as sputtering or a wet process such as CBD (Chemical 'Bath' Deposition).
- the buffer layer can be omitted by improving the transparent electrode described later.
- the light absorption layer 3 and the buffer layer 4 are divided by removing the light absorption layer and the buffer layer with a laser or a metal needle. (Second scribe)
- the ends of the divided light absorption layer 3 and buffer layer 4 have a shape in which the tip of the metal needle is tapered, but the end of the metal needle is substantially vertical.
- laser melting is performed by irradiating a laser so as to include this end portion, and laser annealing is performed so that the substantially vertical end portion is inclined.
- the laser to irradiate is the fourth harmonic of Nd: YVO with a wavelength of 266 nm and a frequency of 40 kHz.
- Any laser can be used as long as it is a heat-processable laser such as YAG and has a higher energy (short wavelength) than the band gap energy of the light absorption layer! /.
- the frequency can also use a continuous light laser.
- the first scriber is used to prevent damage to the lower electrode layer. More preferably, the frequency is higher than that of the laser used in the laser.
- the end portion of the other light absorption layer generated by the second scribe is a so-called dead space in which this region does not contribute to effective power generation, so it is necessary to perform laser annealing. Absent.
- an upper transparent electrode (TCO) such as ZnOAl to be the upper electrode 5 is formed by sputtering or the like on the upper surface of the lower electrode 2 on which the notch layer 4 and the second scribe are performed. TCO is also deposited on the upper part of the laser absorption processed light absorption layer 3.
- FIG. 7 (a) is a cross-sectional SEM photograph of the chalcopyrite solar cell prepared in this example, and FIG. 7 (b) is a simplified view of the photograph of FIG. 7 (a).
- the noffer layer is very thin and cannot be confirmed with photographs.
- the thickness of the TCO deposited on the top of the buffer layer extends from the buffer layer to the lower electrode. It is formed with almost no change. Even in the photo, the crack of TCO cannot be confirmed.
- the upper transparent electrode it is possible to form the upper transparent electrode with a constant film thickness, and it is possible to reduce the series resistance of the cell because it is difficult to cause defects such as a force and a crack.
- a solar cell with high power conversion efficiency can be obtained.
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- Inorganic Chemistry (AREA)
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112007000266T DE112007000266T5 (de) | 2006-01-30 | 2007-01-26 | Solarzelle und Verfahren zur Herstellung derselben |
US12/162,260 US20090032094A1 (en) | 2006-01-30 | 2007-01-26 | Solar cell and method of fabricating the same |
CN2007800039048A CN101375410B (zh) | 2006-01-30 | 2007-01-26 | 太阳能电池及其制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006-019924 | 2006-01-30 | ||
JP2006019924A JP4730740B2 (ja) | 2006-01-30 | 2006-01-30 | 太陽電池およびその製造方法 |
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WO2007086522A1 true WO2007086522A1 (ja) | 2007-08-02 |
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PCT/JP2007/051303 WO2007086522A1 (ja) | 2006-01-30 | 2007-01-26 | 太陽電池およびその製造方法 |
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US (1) | US20090032094A1 (ja) |
JP (1) | JP4730740B2 (ja) |
CN (1) | CN101375410B (ja) |
DE (1) | DE112007000266T5 (ja) |
WO (1) | WO2007086522A1 (ja) |
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JP2018056233A (ja) * | 2016-09-27 | 2018-04-05 | 積水化学工業株式会社 | 太陽電池 |
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- 2007-01-26 CN CN2007800039048A patent/CN101375410B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN101375410A (zh) | 2009-02-25 |
JP4730740B2 (ja) | 2011-07-20 |
US20090032094A1 (en) | 2009-02-05 |
CN101375410B (zh) | 2010-09-22 |
JP2007201302A (ja) | 2007-08-09 |
DE112007000266T5 (de) | 2008-11-27 |
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