WO2007077825A1 - 弾性波フィルタ - Google Patents
弾性波フィルタ Download PDFInfo
- Publication number
- WO2007077825A1 WO2007077825A1 PCT/JP2006/325910 JP2006325910W WO2007077825A1 WO 2007077825 A1 WO2007077825 A1 WO 2007077825A1 JP 2006325910 W JP2006325910 W JP 2006325910W WO 2007077825 A1 WO2007077825 A1 WO 2007077825A1
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- WIPO (PCT)
- Prior art keywords
- wave
- propagation mode
- elastic wave
- sub
- boundary
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
- H03H9/6496—Reducing ripple in transfer characteristic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
- H03H9/6469—Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes
Definitions
- the present invention relates to a resonator-type elastic wave filter using, for example, boundary acoustic waves or surface acoustic waves, and more specifically, a mode elastic wave for obtaining a desired pass band, and other modes.
- the present invention relates to an elastic wave filter using an elastic wave of a mode.
- Patent Document 1 discloses a surface acoustic wave filter device in which a trap series resonator is connected to a surface acoustic wave filter.
- FIG. 9 is a plan view schematically showing an electrode structure of this type of surface acoustic wave filter device.
- the illustrated electrode structure is formed on a piezoelectric substrate. That is, the trap series resonator 104 is connected between the first-stage resonator type surface acoustic wave filter 102 and the second-stage resonator type surface acoustic wave filter 103.
- the surface acoustic wave filters 102 and 103 are 3IDT resonator type surface acoustic wave filters each having three IDTs 102a to 102c and 103a to 103c. Reflectors 102d and 102e are formed on both sides of the surface wave propagation direction of the region where IDTs 102a to 102c are provided. Similarly, the reflectors 103d and 103e are formed on both sides of the surface wave propagation direction in the region where the IDTs 103a to 103c are provided.
- series resonator 104 is a 1-port SAW resonator including IDT 104a and reflectors 104b and 104c arranged on both sides of the surface wave propagation of IDT 104a.
- a series resonator 104 for traps is connected in series with these.
- the trap series resonator 104 forms a trap having a large attenuation in the attenuation region near the pass band of the two-stage cascaded surface acoustic wave filter device including the surface acoustic wave filters 102 and 103. Therefore, the attenuation amount outside the band can be increased, and the steepness of the attenuation characteristic at the end of the pass band can be enhanced.
- Patent Document 1 Japanese Patent Laid-Open No. 6-260876
- the amount of attenuation in the vicinity of the passband can be increased by connecting the trap series resonator 104.
- an electrode structure for forming the trap series resonator 104 is required, and the surface acoustic wave filter device 101 has to have a large chip size.
- the series resonator 104 is connected, the insertion loss in the pass band is increased.
- boundary acoustic wave filters using boundary acoustic waves formed only by surface acoustic wave filters are also known.
- boundary acoustic wave filters are also similar. Therefore, it is strongly desired to increase the attenuation outside the passband without causing an increase in size.
- An object of the present invention is to provide a resonator type acoustic wave filter capable of sufficiently increasing the attenuation in the vicinity of the passband without incurring an increase in chip size in view of the above-described state of the prior art. It is to provide.
- a resonator-type elastic wave filter having a piezoelectric body and at least one IDT electrode formed so as to be in contact with the piezoelectric body, in order to obtain a desired frequency characteristic.
- An acoustic wave filter is provided that is different from the acoustic velocity of the elastic wave in the main propagation mode so that the response in the sub-propagation mode appears at a frequency position outside the band in which it is desired to achieve.
- the sub-propagation mode elastic wave is provided.
- Is Vs the acoustic velocity of the elastic wave in the main propagation mode is Vm
- Vr VsZVm.
- the Vr is in the range of 1.1.5 to 1.1.02 or +1.02 to +1.5.
- the elastic wave used in the elastic wave filter according to the present invention is not particularly limited, and boundary acoustic waves and surface acoustic waves can be used.
- the elastic wave in the main propagation mode is an SH type boundary wave.
- the elastic wave in the sub-propagating mode is a P + SV type boundary acoustic wave.
- the elastic wave in the main propagation mode is a P + SV type boundary wave
- the wave in the sub-propagation mode is an SH type boundary wave
- the elastic wave in the main propagation mode is an SH type surface wave
- the elastic wave in the sub propagation mode is a P + SV type surface wave.
- the elastic wave in the main propagation mode is a P + SV type surface wave
- the elastic wave in the sub-propagation mode is an SH type surface wave.
- An elastic wave filter according to the present invention is a resonator-type elastic wave filter having a piezoelectric body and at least one IDT electrode formed so as to be in contact with the piezoelectric body, and obtains a desired frequency characteristic. Therefore, the elastic wave of the main propagation mode and the elastic wave of the sub-propagation mode that can propagate simultaneously with the elastic wave of the main propagation mode are propagated. The sound velocity of the elastic wave in the sub-propagation mode is different from the sound velocity of the elastic wave in the main propagation mode. Therefore, the response in the sub-propagation mode appears at a different frequency position from the response in the main propagation mode.
- the electromechanical coupling coefficient K 2 of the acoustic wave in the sub-propagating mode is 1% or more 0.1, it appears at a certain atmosphere of the different frequency position response by the Fukuden seeding mode and response by the main propagation mode That's true.
- the electromechanical coupling coefficient K 2 of the sub-propagation mode is too large, it is spurious, it is impossible to obtain a good frequency characteristic.
- the elastic wave of the sub-propagation mode Electromechanical coupling coefficient, so there is a value below 1Z3 following the electromechanical coupling coefficient K 2 of the acoustic wave in the main propagation mode, response by the auxiliary propagation mode hardly becomes spurious.
- the magnitude and speed of sound of the electromechanical coupling coefficient K 2 in the sub-propagation mode can be adjusted by adjusting the film thickness of the IDT electrode, the duty ratio, or the crystal orientation of the piezoelectric substrate. It can be adjusted easily. Therefore, it is possible to reliably increase the out-of-band attenuation without increasing the chip size and without increasing the insertion loss due to spurious in the band.
- boundary acoustic waves may be used.
- the elastic waves in the main propagation mode are SH type boundary waves
- the elastic waves in the sub-propagation mode are P + SV.
- the main propagation mode may be a P + SV type boundary wave
- the sub-propagation mode may be an SH type boundary wave.
- the elastic wave in the main propagation mode is an SH type surface wave or a P + SV type surface wave
- the elastic wave in the sub propagation mode is a P + SV type surface wave or an SH type surface wave.
- the out-of-band attenuation can be easily increased without increasing the chip size and degrading the in-band insertion loss due to unnecessary spurious.
- FIG. 1 (a) and (b) are a schematic plan view showing an electrode structure of a boundary acoustic wave filter according to an embodiment of the present invention, and a schematic front view of the boundary acoustic wave filter. It is sectional drawing.
- FIG. 2 is a diagram showing the filter characteristics of the boundary acoustic wave filter shown in FIG.
- FIG. 3 is a diagram showing filter characteristics of a boundary acoustic wave filter of a comparative example.
- FIG. 4 is a diagram for explaining the change of the secondary propagation mode in a P + SV type electromechanical coupling coefficient depth of traps appearing in the band near pass the altered so the case of K 2 of .
- Figure 5 shows a 15 ° Y-cut X-propagation LiNbO-SiO interface with a film thickness of 0.06 Au
- FIG. 6 is a diagram showing the relationship between the duty ratio of the IDT electrode and the sound speed of the SH-type boundary wave and Stoneley wave when an IDT electrode is formed.
- Figure 6 shows the 15 ° Y-cut X-propagation LiNbO / SiO interface made of Au.
- FIG. 6 is a diagram showing the relationship between the IDT film thickness of the IDT electrode made of Au and the sound velocity of the SH-type boundary wave and the Stoney wave when an IDT electrode having an i ratio of 0.6 is formed.
- Figure 7 shows a 15 ° Y-cut X-propagation LiNbO-SiO interface with a film thickness of 0.06 Au
- FIG. 6 is a diagram showing the relationship between the duty ratio of the IDT electrode and the electromechanical coupling coefficient K 2 of the SH-type boundary wave and Stoneley wave when the IDT electrode is formed.
- Figure 8 shows the 15 ° Y-cut X-propagation LiNbO / SiO interface made of Au.
- FIG. 6 is a diagram showing the relationship between the IDT film thickness, which also has an Au force, and the electromechanical coupling coefficient K 2 of the SH-type boundary wave and the Stoneley wave when an IDT electrode having an I ratio of 0.6 is formed.
- FIG. 9 is a schematic plan view showing an electrode structure of a conventional surface acoustic wave filter. Explanation of symbols
- 1 (a) and 1 (b) are a schematic plan view showing an electrode structure for explaining a boundary acoustic wave filter according to an embodiment of the present invention, and a structure of the boundary acoustic wave filter. It is a typical front sectional view.
- the boundary acoustic wave filter 1 includes first and second media 2 and 3.
- the first medium 2 has a piezoelectric force.
- the piezoelectric body constituting the first medium 2 is not particularly limited, but in the present embodiment, it is constituted by a 20 ° Y cut, 20 ° X direction propagation LiNbO substrate.
- the medium 3 is made of SiO in the present embodiment, but is composed of other dielectrics.
- FIG. 1 shows an electrode structure consisting of an IDT electrode and a reflector.
- a resonator-type first-stage boundary acoustic wave filter 11 and a resonator-type second-stage boundary acoustic wave filter 12 are cascade-connected so that the boundary acoustic wave filter 1 is Is formed.
- Each of the boundary acoustic wave filters 11 and 12 is a 3IDT electrode type resonator type boundary acoustic wave filter.
- the boundary acoustic wave filter 11 includes three IDT electrodes 1 la to l lc arranged in the boundary wave propagation direction. IDT electrodes 1 la to l lc are provided! /, And reflectors 1 Id and 1 le are arranged on both sides of the boundary wave propagation direction.
- the boundary acoustic wave filter 12 includes three ID T electrodes 12a to 12c arranged along the boundary wave propagation direction, and reflectors 12d and 12e.
- IDT 1 lb One end of IDT 1 lb is electrically connected to the input terminal 13, and one end of IDT 12 b is electrically connected to the output terminal 14.
- each end force of IDTlla, 11c is electrically connected to each end of IDT12a, 12c.
- the ends of IDT1 la-1 lc and IDT12a-12c opposite to the side connected as described above are all connected to the ground potential.
- FIG. 1 (b) such an electrode structure is schematically shown, where IDTlla ⁇ : Lie and reflector 1 Id, 1 le are formed and shown. !
- the boundary acoustic wave filter 1 when an input signal is applied from the input terminal 13, the boundary acoustic wave filters 11 and 12 excite the boundary acoustic wave, and output having frequency characteristics based on the excited boundary acoustic wave. A signal is taken from output terminal 14.
- the SH type boundary wave is used as the main propagation mode, and the frequency characteristics based on the main propagation mode are used.
- the feature of the present embodiment is that the response of the P + SV type boundary wave, which is the sub-propagation mode that is not only the SH type boundary acoustic wave as the main propagation mode, is also used.
- boundary acoustic wave filters and surface acoustic wave filters when an input signal is applied, waves of various modes are excited as boundary acoustic waves and surface acoustic waves.
- the main propagation mode for forming the pass band is selected according to the target frequency band. Since modes other than the main propagation mode are unnecessary waves, it was desirable that the response be as small as possible. For example, if a response of an unwanted wave appears in the pass band, spurious will occur in the pass band and the frequency characteristics will deteriorate. In addition, if there is an unnecessary wave in the vicinity of the passband, it is considered that the desired attenuation cannot be obtained, and the response of elastic waves in modes other than the main propagation mode is designed to be as small as possible. It was.
- P + SV type boundary waves which are other modes besides the main propagation mode, which is the SH type boundary wave, are also used. Therefore, expansion of out-of-band attenuation is attempted.
- the response by the P + SV type boundary wave that is the sub-propagation mode is increased to some extent in the vicinity of the passband on the high-passband side obtained by the main propagation mode.
- the attenuation in the vicinity of the passband on the high passband side is expanded. This will be described more specifically with reference to FIGS.
- the boundary acoustic wave filter 1 was fabricated by forming the choke electrodes 11 & to 11 12a to 12c and the reflectors l id, l ie, 12d, and 12e.
- IDT electrodes 11a ⁇ : L lc, 12 & ⁇ 12 were formed by a laminated metal film formed by laminating?
- the film thickness is as follows.
- NiCr / Au / NiCr 0. 003 ⁇ / 0. 06 ⁇ / 0. 003 ⁇
- the duty ratio of the IDT electrode was 0.6.
- the number of pairs of electrode fingers of the central IDT electrodes l ib and 12b is 12, and the number of pairs of electrode fingers of the other IDT electrodes 11a, 11c and 12a, 12c. 7 pairs.
- the number of electrode fingers of the reflectors l id, l ie, 12d, 12e was fifteen.
- the opening width in the IDT electrodes lla to llc, 12a to 12c that is, the dimension in the direction orthogonal to the boundary acoustic wave propagation direction of the boundary wave propagation portion was set to 183.7 m.
- the crossing width gradually decreases from the IDT center to the IDT end, and the crossing width at the IDT center is 180 ⁇ m.
- the cross width was weighted so that the width was 144 ⁇ m.
- FIG. 2 shows the filter characteristics of the boundary acoustic wave filter of the present embodiment produced in this way.
- the above Figure 3 shows the frequency characteristics of the boundary acoustic wave filter of the comparative example manufactured in the same way as the embodiment.
- the attenuation amount is temporarily increased by connecting the first and second boundary acoustic wave filters in two stages.
- the attenuation near 915 MHz is greatly improved to 28.4 dB.
- the response of the P + SV type boundary wave which has been conventionally considered to be an unnecessary wave, is used.
- the amount of external attenuation is increased.
- the response of the sub-propagation mode is matched to the frequency position where the attenuation is desired to be increased outside the passband, and the attenuation is expanded by the response of the sub-propagation mode. Therefore, it is desirable that the magnitude of the response in the sub-propagation mode is such that the out-of-band attenuation can be expanded.
- FC the passband bandwidth
- BW the passband bandwidth.
- FC BW / 2-a (FC + BW / 2)> Vr> (FC + BW / 2 + ⁇ ) Z (FC— BW / 2) (1)
- ⁇ is the response force of the side lobe of the sub-propagation mode. It responds even to the passband of the main propagation mode, and it is given when it appears as a fine force and a ripple at the pass end of the filter. It is a coefficient, a value obtained experimentally, and a value about 0 to 4 times the bandwidth BW.
- the center frequency of the SH type boundary wave which is the main propagation mode, is 879.4 MHz
- the bandwidth BW is 35.5 MHz
- Vr is 1.15
- ⁇ is 2. 65 ⁇ .
- FIG. 4 shows the trap depth due to the response of the P + SV type boundary wave appearing on the high pass band side of the SH type boundary wave, which is the main propagation mode, in the boundary acoustic wave filter of the above embodiment.
- the trap depth (dB) on the vertical axis in FIG. 4 does not coincide with the attenuation in the vicinity of 915 MHz in the frequency characteristics shown in FIG.
- the depth of the trap corresponding to the insertion loss difference between the resonance point and the antiresonance point in Fig. 2 is assumed.
- the electromechanical coupling coefficient K 2 of the P + SV type boundary wave which is the sub-propagation mode
- the trap depth increases, and the boundary acoustic wave filter 1
- the electromechanical binding coefficient K 2 of the sub-propagation mode is 1% or more 0.5, a case of not using the response of the secondary propagation mode Te ratio base, can be increased to about the depth of the trap .
- the electromechanical coupling coefficient K 2 in the sub-propagation mode is set to 1Z3 or less of the electromechanical coupling coefficient K 2 in the main propagation mode.
- the electromechanical coupling coefficient K 2 of the main propagation mode is 1 6%
- the electromechanical coupling coefficient K 2 of the sub-propagation mode is a 5.3% or less, thereby, As is clear from Fig. 4, the trap has a sufficient depth, and the amount of attenuation on the high side of the passband can be reliably increased.
- the crystal orientation in the piezoelectric body to be used, the film thickness and the duty ratio of the IDT electrode are changed, and thereby the response in the sub-transmission mode is performed.
- the frequency position and electromechanical coupling coefficient of each mode response in an elastic wave device using a boundary acoustic wave or surface acoustic wave changes the overall crystal orientation, the film thickness of the IDT electrode, the duty ratio, etc. It is known that this can be adjusted.
- positioning the response of the sub-propagation mode at the frequency position where the out-of-band attenuation is desired to be expanded and adjusting the magnitude of the response are the piezoelectric material and crystal orientation. , IDT electrode film thickness and duty ratio, etc. Can be achieved by changing. [0062] In the following, a 15 ° Y-cut X-propagation LiNbO substrate, ie, Euler angles (0 °, 1
- FIG. 5 shows changes in the sound velocity of the SH-type boundary wave and the Stoney wave when the thickness of the IDT electrode is 0.06 ⁇ and the duty ratio is changed.
- FIG. 6 is a diagram showing changes in the sound velocity of the SH boundary wave and the Stoneley wave when the IDT electrode duty ratio is 0.6 and the film thickness of the IDT electrode is changed.
- the film thickness of the IDT electrode 0.06 Etoshite shows a SH boundary waves and Stoneley waves and the change of the electromechanical coupling coefficient number kappa 2 in the case of changing the de utility ratio, 8, as 0.6 the duty ratio of the IDT electrode, showing changes in electromechanical coefficient kappa 2 SH type boundary acoustic wave and Sutonri one wave in the case of changing the thickness of the IDT electrode.
- the SH-type boundary wave used as the main propagation mode and the Stoneley wave used as the sub-propagation mode do not necessarily agree with the change tendency due to the thickness of the Au layer. Absent. Therefore, a pass band is formed by the SH-type boundary wave, and the duty ratio and the Stoney wave are excited so that the SH-type boundary wave and the Stoney wave can be excited so that the attenuation on the high side of the passband is increased by the Stonery wave. It can be seen that the thickness of the Au layer can be selected.
- the frequency position of the response of the Stoney wave that is, the sound velocity of the Stonery wave
- the sound velocity of the SH boundary wave is determined by the center frequency of the target passband.
- an electromechanical coupling coefficient K 2 of the SH type boundary acoustic wave an electro-mechanical coupling coefficient K 2 by one wave Sutonri, as described above, the expansion of attenuation that put in the high-frequency side of the passband What is necessary is just to set so that it may become the size which can be planned. That's what I said In other words, if the electromechanical coupling coefficient ⁇ 2 of the Stoneley wave is set so that it is 0.1% or more and 1Z3 or less of the electromechanical coupling coefficient K 2 in the main propagation mode.
- FIGS. 5 to 8 show changes in the sound speed of the Stoneley wave and SH type boundary wave and the electromechanical coupling coefficient K 2 depending on the duty ratio and the thickness of the Au layer. As described above, the speed of sound of one wave and the electromechanical coupling coefficient K 2 also vary depending on the crystal orientation of the piezoelectric material used.
- the resonance is not limited to the two-stage cascade connection type, and various resonances are possible.
- the present invention can be applied to a child-type boundary acoustic wave filter.
- the boundary acoustic wave the force explained when using the SH type boundary wave as the main propagation mode, conversely, using the P + SV type boundary wave such as the Stonery single wave as the main propagation mode, the SH type boundary wave Can be used as a secondary propagation mode.
- the present invention can be applied to a resonator type surface acoustic wave filter that includes only boundary acoustic waves.
- a resonator type surface acoustic wave filter when an input signal is applied, a plurality of modes propagate in the same manner as the boundary wave filter. Of these plurality of propagation modes, a pass band is obtained.
- the main propagation mode and the other propagation modes as the sub-propagation modes, it is possible to increase the attenuation outside the passband as in the above embodiment.
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2007552936A JP4748166B2 (ja) | 2006-01-06 | 2006-12-26 | 弾性波フィルタ |
DE112006003566T DE112006003566B4 (de) | 2006-01-06 | 2006-12-26 | Elastikwellenfilter |
US12/166,424 US7772942B2 (en) | 2006-01-06 | 2008-07-02 | Elastic wave filter utilizing a sub-propagation mode response to increase out of band attenuation |
Applications Claiming Priority (2)
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JP2006001290 | 2006-01-06 | ||
JP2006-001290 | 2006-01-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/166,424 Continuation US7772942B2 (en) | 2006-01-06 | 2008-07-02 | Elastic wave filter utilizing a sub-propagation mode response to increase out of band attenuation |
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WO2007077825A1 true WO2007077825A1 (ja) | 2007-07-12 |
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PCT/JP2006/325910 WO2007077825A1 (ja) | 2006-01-06 | 2006-12-26 | 弾性波フィルタ |
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US (1) | US7772942B2 (ja) |
JP (1) | JP4748166B2 (ja) |
DE (1) | DE112006003566B4 (ja) |
WO (1) | WO2007077825A1 (ja) |
Families Citing this family (4)
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WO2011077942A1 (ja) * | 2009-12-24 | 2011-06-30 | 株式会社村田製作所 | 磁気センサ素子及びその製造方法並びに磁気センサ装置 |
WO2015190178A1 (ja) * | 2014-06-10 | 2015-12-17 | 株式会社村田製作所 | 弾性波装置 |
JP6777240B2 (ja) * | 2017-08-09 | 2020-10-28 | 株式会社村田製作所 | マルチプレクサ、高周波フロントエンド回路及び通信装置 |
DE102018124157B4 (de) * | 2018-10-01 | 2023-11-09 | Rf360 Singapore Pte. Ltd. | Für hohe Frequenzen ausgelegte SAW-Vorrichtung |
Citations (4)
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JP2000068782A (ja) * | 1998-08-21 | 2000-03-03 | Murata Mfg Co Ltd | 表面波共振子、表面波フィルタ、共用器、通信機装置 |
WO2004070946A1 (ja) * | 2003-02-10 | 2004-08-19 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
WO2005069485A1 (ja) * | 2004-01-13 | 2005-07-28 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
JP2005295202A (ja) * | 2004-03-31 | 2005-10-20 | Tdk Corp | 弾性表面波フィルタおよびデュプレクサ |
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JPS60249411A (ja) | 1984-05-25 | 1985-12-10 | Hitachi Ltd | 弾性表面波装置 |
JP3191473B2 (ja) | 1993-03-09 | 2001-07-23 | 三菱電機株式会社 | 弾性表面波フィルタ |
JPH07307640A (ja) * | 1994-03-17 | 1995-11-21 | Fujitsu Ltd | 弾性表面波デバイス |
JP3243976B2 (ja) * | 1995-08-14 | 2002-01-07 | 株式会社村田製作所 | 弾性表面波フィルタ |
JP3614234B2 (ja) * | 1996-03-14 | 2005-01-26 | 沖電気工業株式会社 | 共振器型弾性表面波フィルタ |
US6137380A (en) * | 1996-08-14 | 2000-10-24 | Murata Manufacturing, Co., Ltd | Surface acoustic wave filter utilizing a particularly placed spurious component of a parallel resonator |
JPH1084245A (ja) | 1996-09-10 | 1998-03-31 | Hitachi Ltd | 弾性表面波素子 |
JP2003188675A (ja) * | 2001-12-19 | 2003-07-04 | Alps Electric Co Ltd | 表面弾性波素子及びそれを備えたデュプレクサ |
JP4127170B2 (ja) * | 2003-01-07 | 2008-07-30 | 株式会社村田製作所 | 表面波装置 |
CN100576733C (zh) * | 2004-03-05 | 2009-12-30 | 株式会社村田制作所 | 边界声波器件 |
WO2005093949A1 (ja) | 2004-03-29 | 2005-10-06 | Murata Manufacturing Co., Ltd. | 弾性境界波装置の製造方法及び弾性境界波装置 |
-
2006
- 2006-12-26 WO PCT/JP2006/325910 patent/WO2007077825A1/ja active Application Filing
- 2006-12-26 JP JP2007552936A patent/JP4748166B2/ja active Active
- 2006-12-26 DE DE112006003566T patent/DE112006003566B4/de active Active
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2008
- 2008-07-02 US US12/166,424 patent/US7772942B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000068782A (ja) * | 1998-08-21 | 2000-03-03 | Murata Mfg Co Ltd | 表面波共振子、表面波フィルタ、共用器、通信機装置 |
WO2004070946A1 (ja) * | 2003-02-10 | 2004-08-19 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
WO2005069485A1 (ja) * | 2004-01-13 | 2005-07-28 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
JP2005295202A (ja) * | 2004-03-31 | 2005-10-20 | Tdk Corp | 弾性表面波フィルタおよびデュプレクサ |
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Publication number | Publication date |
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JPWO2007077825A1 (ja) | 2009-06-11 |
DE112006003566T5 (de) | 2008-10-30 |
DE112006003566B4 (de) | 2013-07-11 |
JP4748166B2 (ja) | 2011-08-17 |
US7772942B2 (en) | 2010-08-10 |
US20080258846A1 (en) | 2008-10-23 |
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