WO2006138441A2 - Dispositifs d'acceleration et procedes d'utilisation correspondants - Google Patents

Dispositifs d'acceleration et procedes d'utilisation correspondants Download PDF

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Publication number
WO2006138441A2
WO2006138441A2 PCT/US2006/023277 US2006023277W WO2006138441A2 WO 2006138441 A2 WO2006138441 A2 WO 2006138441A2 US 2006023277 W US2006023277 W US 2006023277W WO 2006138441 A2 WO2006138441 A2 WO 2006138441A2
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WIPO (PCT)
Prior art keywords
chamber
boost
atomization
sample
examples
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Application number
PCT/US2006/023277
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English (en)
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WO2006138441A3 (fr
Inventor
Peter J. Morrisroe
Original Assignee
Perkinelmer, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/156,249 external-priority patent/US8622735B2/en
Priority claimed from US11/156,274 external-priority patent/US7742167B2/en
Application filed by Perkinelmer, Inc. filed Critical Perkinelmer, Inc.
Priority to EP06784915A priority Critical patent/EP1891407A4/fr
Priority to AU2006259381A priority patent/AU2006259381B2/en
Priority to CN200680021600XA priority patent/CN101198846B/zh
Priority to CA2608528A priority patent/CA2608528C/fr
Priority to JP2008517097A priority patent/JP2008544454A/ja
Publication of WO2006138441A2 publication Critical patent/WO2006138441A2/fr
Publication of WO2006138441A3 publication Critical patent/WO2006138441A3/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/106—Features related to sonotrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/72—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using flame burners
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • G01N30/62—Detectors specially adapted therefor
    • G01N30/72—Mass spectrometers
    • G01N30/7206—Mass spectrometers interfaced to gas chromatograph
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • G01N30/62—Detectors specially adapted therefor
    • G01N30/72—Mass spectrometers
    • G01N30/7233—Mass spectrometers interfaced to liquid or supercritical fluid chromatograph
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • G01N30/62—Detectors specially adapted therefor
    • G01N30/72—Mass spectrometers
    • G01N30/7233—Mass spectrometers interfaced to liquid or supercritical fluid chromatograph
    • G01N30/724—Nebulising, aerosol formation or ionisation
    • G01N30/7246—Nebulising, aerosol formation or ionisation by pneumatic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • G01N30/62—Detectors specially adapted therefor
    • G01N30/72—Mass spectrometers
    • G01N30/7233—Mass spectrometers interfaced to liquid or supercritical fluid chromatograph
    • G01N30/7273—Desolvation chambers

Definitions

  • boost devices for example, boost devices configured to provide radio frequencies. More particularly, certain examples relate to boost devices that may be used to provide additional energy to an atomization source, such as a flame or a plasma.
  • Atomization sources such as flames, may be used for a variety of applications, such as welding, chemical analysis and the like. In some instances, flames used in chemical analyses are not hot enough to vaporize the entire liquid sample that is injected into the flame. In addition, introduction of a liquid sample may result in zonal temperatures that may provide mixed results. [3] Another approach to atomization is to use a plasma source. Plasmas have been used in many technological areas including chemical analysis. Plasmas are electrically conducting gaseous mixtures containing large concentrations of cations and electrons.
  • the temperature of a plasma may be as high as around 6,000-10,000 Kelvin, depending on the region of the plasma, whereas the temperature of a flame is often about 1400-1900 Kelvin, depending on the region of the flame. Due to the higher temperatures of the plasma, more rapid vaporization, atomization and/or ionization of chemical species may be achieved. [4] Use of plasmas may have several drawbacks in certain applications. Viewing optical emissions from chemical species in the plasma may be hindered by a high background signal from the plasma. Also, in some circumstances, plasma generation may require high total flow rates of argon (e.g., about 11-17 L/min) to create the plasma, including a flow rate of about 5-15 L/min of argon to isolate the plasma thermally.
  • argon e.g., about 11-17 L/min
  • injection of aqueous samples into a plasma may result in a decrease in plasma temperature due to evaporation of solvent, i.e., a decrease in temperature due to desolvation.
  • This temperature reduction may reduce the efficiency of atomization and ionization of chemical species in some contexts.
  • a boost device is shown here as a way to assist other atomization sources, such as flames, plasmas, arcs and sparks. Certain of these embodiments may enhance atomization efficiency, ionization efficiency, decrease background noise and/or increase emission signals from atomized and ionized species.
  • a boost device refers to a device that is configured to provide additional energy to another device, or region of that device, such as, for example, an atomization chamber, desolvation chamber, excitation chamber, etc.
  • a radio frequency (RF) boost device may be configured to provide additional energy, e.g., in the form of radio frequency energy, to an atomization source, such as a flame, plasma, arc, spark or combinations thereof.
  • Such additional energy may be used to assist in desolvation, atomization and/or ionization of species introduced into the atomization source, may be used to excite atoms or ions, may be used to extend optical path length, may be used to improve detection limits, may be used to increase sample size loading or may be used for many additional uses where it may be desirable or advantageous to provide additional energy to an atomization source.
  • Other uses of the boost devices disclosed herein will be recognized by the person of ordinary skill in the art, given the benefit of this disclosure, and exemplary additional uses of the boost devices in chemical analysis, welding, sputtering, vapor deposition, chemical synthesis and treatment of radioactive waste are provided below to illustrate some of the features and uses of certain illustrative boost devices disclosed herein.
  • an atomization device may include a chamber configured with an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the atomization source may be a device that may atomize and/or ionize species including but not limited to flames, plasmas, arcs, sparks, etc.
  • the boost device may be configured to provide additional energy to a suitable region or regions of the chamber such that species present in the chamber may be atomized, ionized and/or excited. Suitable devices and components for designing or assembling the atomization source and the boost device will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure, and exemplary devices and components are discussed below.
  • the atomization devices include a first chamber and a second chamber.
  • the first chamber includes an atomization source.
  • the atomization source may be a device that may atomize and/or ionize species including but not limited to flames, plasmas, arcs, sparks, etc.
  • the second chamber may include at least one boost device configured to provide radio frequency energy to the second chamber to provide additional energy to excite any atoms or ions that enter into the second chamber.
  • the first and second chambers may be in fluid communication such that species that are atomized or ionized in the first chamber may enter into the second chamber.
  • a device for optical emission spectroscopy may include a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the OES device may include a first chamber that includes an atomization source and a second chamber that may include a boost device configured to provide radio frequencies to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable devices that may atomize and/or ionize chemical species introduced into the first chamber.
  • the OES device may further include a light detector configured to detect the amount of light and/or the wavelength of light emitted by species that are atomized and/or ionized using the OES device. Depending on the configuration of the OES device, the OES device may be used to detect atomic emission, fluorescence, phosphorescence and other light emissions.
  • the OES device may further include suitable circuitry, algorithms and software. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design suitable OES devices for an intended use.
  • the OES device may include two or more plasma sources for atomization, ionization and/or detection of species.
  • a device for absorption spectroscopy (“AS") is disclosed.
  • the AS device may include a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the AS device may include at least a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may include at least one boost device configured to provide radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the AS device may further include a light source configured to provide one or more wavelengths of light and a light detector configured to detect the amount of light absorbed by the species present in one or more of the chambers.
  • the AS device may further include suitable circuitry, algorithms and software of the type known in the art for such devices.
  • a device for mass spectroscopy may include an atomization device coupled or hyphenated to a mass analyzer, a mass detector or a mass spectrometer.
  • the MS device includes an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the MS device includes a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber. The second chamber may include at least one boost device configured to provide radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the MS device may be configured such that the chamber, or first and second chambers, may be coupled or hyphenated to a mass analyzer, a mass detector or mass spectrometer such that species that exit the chamber, or first and second chambers, may enter into the mass analyzer, mass detector or mass spectrometer for detection.
  • the MS device may be configured such that species first enter into the mass analyzer, mass detector or mass spectrometer and then enter into the chamber, or first and second chambers, for detection using optical emission, absorption, fluorescence or other spectroscopic or analytical techniques.
  • a device for infrared spectroscopy is disclosed.
  • the IRS device may include an atomization device coupled or hyphenated to an infrared detector or infrared spectrometer.
  • the IRS device may include an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the IRS device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may also include at least one boost device configured to provide radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the IRS device may be configured such that the chamber, or first and second chambers, may be coupled or hyphenated to an infrared detector or infrared spectrometer such that species that exit the chamber, or the first and second chambers, may enter into the infrared detector for detection.
  • the IRS device may be configured such that species first enter into the infrared detector or infrared spectrometer and then enter into the chamber, or first and second chambers, for detection using optical emission, absorption, fluorescence or other suitable spectroscopic or analytical techniques.
  • a device for fluorescence spectroscopy (“FLS") is disclosed.
  • the FLS device may include an atomization device coupled or hyphenated to a fluorescence detector or fluorimeter.
  • the FLS device may include an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the FLS device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may include at least one boost device configured to supply radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the FLS device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to a fluorescence detector or fluorimeter such that species that exit the chamber, or first and second chambers, may enter into the fluorescence detector for detection.
  • the FLS device may be configured such that species first enter into the fluorescence detector or fluorimeter and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other suitable spectroscopic or analytical techniques.
  • a device for phosphorescence spectroscopy (“PHS") is disclosed.
  • the PHS device may include an atomization device coupled or hyphenated to a phosphorescence detector or phosphorimeter.
  • the PHS device may include an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the PHS device may include a chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may include at least one boost device configured to provide radio frequency energy to the chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the PHS device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to a phosphorescence detector or phosphorimeter such that species that exit the chamber, or first and second chambers, may enter into the phosphorescence detector for detection.
  • the PHS device may be configured such that species first enter into the phosphorescence detector or phosphorimeter and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other suitable spectroscopic or analytical techniques.
  • a device for Raman spectroscopy (“RAS") is disclosed.
  • the RAS device may include an atomization device coupled or hyphenated to a Raman detector or Raman spectrometer.
  • the RAS device may include an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the RAS device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may include a boost device configured to supply radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the RAS device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to a Raman detector or Raman spectrometer such that species that exit the chamber, or first and second chambers, may enter into the Raman detector or spectrometer for detection.
  • the RAS device may be configured such that species first enter into the Raman detector or Raman spectrometer and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other suitable spectroscopic or analytical techniques.
  • a device for X-ray spectroscopy may include an atomization device coupled or hyphenated to an X-ray detector or an X-ray spectrometer.
  • the XRS device may include an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the XRS device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber. The second chamber may include a boost device configured to supply radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the XRS device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to an X-ray detector or an X-ray spectrometer such that species that exit the chamber, or first and second chamber, may enter into the X-ray detector or spectrometer for detection.
  • the XRS device may be configured such that species first enter into the X-ray detector or an X-ray spectrometer and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other suitable spectroscopic or analytical techniques.
  • a device for gas chromatography may include an atomization device coupled or hyphenated to a gas chromatograph.
  • the GC device may include an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the GC device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may include at least one boost device configured to provide radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the GC device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to a gas chromatograph such that species that exit the chamber, or first and second chambers, may enter into the gas chromatograph for separation and/or detection.
  • the GC device may be configured such that species first enter into the gas chromatograph and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other suitable spectroscopic or analytical techniques.
  • a device for liquid chromatography (“LC") is disclosed.
  • the LC device may include an atomization device coupled or hyphenated to a liquid chromatograph.
  • the LC device may include an atomization device with a chamber that includes an atomization source and at least one boost device conf igured to provide radio frequency energy to the chamber.
  • the LC device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may include at least one boost device configured to provide radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the LC device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to a liquid chromatograph such that species that exit the chamber, or first and second chambers, may enter into the liquid chromatograph for separation and/or detection.
  • the LC device may be configured such that species first enter into the liquid chromatograph and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other suitable spectroscopic or analytical techniques.
  • NMR nuclear magnetic resonance
  • the NMR device may include an atomization device coupled or hyphenated to a nuclear magnetic resonance detector or a nuclear magnetic resonance spectrometer.
  • the NMR device includes an atomization device with a chamber that includes an atomization source and at least one boost device conf igured to provide radio frequency energy to the chamber.
  • the NMR device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber.
  • the second chamber may include at least one boost device configured to provide radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the NMR device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to a nuclear magnetic resonance detector or a nuclear magnetic resonance spectrometer such that species that exit the chamber, or first and second chambers, may enter into the nuclear magnetic resonance detector or nuclear magnetic resonance spectrometer for detection.
  • the nuclear magnetic resonance detector or nuclear magnetic resonance spectrometer may be configured such that species first enter into the nuclear magnetic resonance detector or nuclear magnetic resonance spectrometer and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other spectroscopic or analytical techniques. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to select suitable devices and methods to couple nuclear magnetic resonance detectors or nuclear magnetic resonance spectrometers with the atomization devices disclosed here to perform nuclear magnetic resonance spectroscopy.
  • a device for electron spin resonance may include an atomization device coupled or hyphenated to an electron spin resonance detector or an electron spin resonance spectrometer.
  • the ESR device may include an atomization device with a chamber that includes an atomization source and at least one boost device configured to provide radio frequency energy to the chamber.
  • the ESR device may include a first chamber that includes an atomization source and a second chamber in fluid communication with the first chamber. The second chamber may include at least one boost device configured to provide radio frequency energy to the second chamber.
  • the atomization source may be a flame, plasma, arc, spark or other suitable sources that may atomize and/or ionize chemical species.
  • the ESR device may be configured such that the chamber, or first and second chambers, of the atomization device may be coupled or hyphenated to an electron spin resonance detector or an electron spin resonance spectrometer such that species that exit the chamber, or first chamber and second chambers, may enter into the electron spin resonance detector or the electron spin resonance spectrometer for detection.
  • the electron spin resonance detector or the electron spin resonance spectrometer may be configured such that species first enter into the electron spin resonance detector or the electron spin resonance spectrometer and then enter into the chamber, or first and second chambers, of the atomization device for detection using optical emission, absorption, fluorescence or other spectroscopic or analytical techniques.
  • a welding device may include an electrode, a nozzle tip and at least one boost device surrounding at least some portion of the electrode and/or the nozzle tip and configured to provide radio frequencies.
  • Welding devices which include a boost device may be used in sui table welding applications, for example, in tungsten inert gas (TIG) welding, plasma arc welding (PAW), submerged arc welding (SAW), laser welding, and high frequency welding.
  • TIG tungsten inert gas
  • PAW plasma arc welding
  • SAW submerged arc welding
  • laser welding and high frequency welding.
  • Exemplary configurations implementing the boost devices disclosed here in combination with torches for welding are discussed below and other suitable configurations will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • a plasma cutter is provided.
  • the plasma cutter may include a chamber or channel that includes an electrode.
  • the chamber or channel in this example may be configured such that a cutting gas may flow through the chamber and may be in fluid communication with the electrode and such that a shielding gas may flow around the cutting gas and the electrode to minimize interferences such as oxidation of the cutting surface.
  • the plasma cutter of this example may further include at least one boost device configured to increase ionization of the cutting gas and/or increase the temperature of the cutting gas.
  • Suitable cutting gases may be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure, and exemplary cutting gases include, for example, argon, hydrogen, nitrogen, oxygen and mixtures thereof.
  • a vapor deposition device is disclosed.
  • the vapor deposition device may include a material source, a reaction chamber, an energy source with at least one boost device, a vacuum system and an exhaust system. The vapor deposition device may be configured to deposit material onto a sample or substrate.
  • a sputtering device may include a target and a heat source including at least one boost device.
  • the heat source may be configured to cause ejection of atoms and ions from the target.
  • the ejected atoms and ions may be deposited, for example, on a sample or substrate.
  • a device for molecular beam epitaxy may include a growth chamber configured to receive a sample, at least one material source configured to provide atoms and ions to the growth chamber, and at least one boost device configured to provide radio frequency energy to the at least one material source.
  • the molecular beam epitaxy device may be used, for example, to deposit materials onto a sample or substrate.
  • a chemical reaction chamber is disclosed.
  • the chemical reaction chamber includes a reaction chamber with an atomization source and at least one boost device configured to provide radio frequency energy to the chemical reaction chamber.
  • the reaction chamber may further include an inlet for introducing reactants and/or catalysts into the reaction chamber.
  • the reaction chamber may be used, for example, to control or promote reactions between products or to favor one or more products produced from the reactants.
  • a device for treatment of radioactive waste includes a chamber configured to receive radioactive waste, an atomization source configured to atomize and/or oxidize radioactive waste and an inlet for introducing additional reactants or species that may react with, or interact with, the radioactive materials to provide stabilized forms.
  • the stabilized forms may be disposed of, for example, using suitable disposal techniques, e.g., burial, etc.
  • a light source is disclosed.
  • the light source may include an atomization source and at least one boost device.
  • the atomization source may be configured to atomize a sample, and the boost device may be configured to excite the atomized sample, which may emit photons to provide a source of light, by providing radio frequency energy to the atomized sample.
  • an atomization device that includes an atomization source and a microwave source (e.g., a microwave oven among other things) is disclosed.
  • the microwave source may be configured to provide microwaves to the atomization source to create a plasma plume or extend a plasma plume.
  • Atomization devices including microwave sources may be used for numerous applications including, for example, chemical analysis, welding, cutting and the like.
  • a miniaturized atomization device is disclosed.
  • the miniaturized atomization device may be configured to provide devices that may be taken for in-field analyses.
  • microplasmas including at least one boost device are disclosed.
  • a limited use atomization device is disclosed.
  • the limited use atomization device may be configured with at least one boost device and may be further configured to provide sufficient power and/or fuel for one, two or three measurements.
  • the limited use device may include a detector for measurement of species, such as, for example, arsenic, chromium, selenium, lead, etc.
  • an optical emission spectrometer configured to detect arsenic at a level of about 0.6 ⁇ g/L or lower is disclosed.
  • the spectrometer may include a device that may excite atomized arsenic species for detection at levels of about 0.3 ⁇ g/L or lower.
  • an optical emission spectrometer configured to detect cadmium at a level of about 0.014 ⁇ g/L or lower.
  • the spectrometer may include a device that may excite atomized cadmium species for detection at levels of about 0.007 ⁇ g/L or lower.
  • an optical emission spectrometer configured to detect lead at a level of about 0.28 ⁇ g/L or lower.
  • the spectrometer may include an atomization device and a boost device that may excite atomized lead species for detection at levels of about 0.14 ⁇ g/L or lower.
  • an optical emission spectrometer configured to detect selenium at a level of about 0.6 ⁇ g/L or lower is disclosed.
  • the spectrometer may include a device that may excite atomized selenium species for detection at levels of about 0.3 ⁇ g/L or lower.
  • a spectrometer including an inductively coupled plasma and at least one boost device is disclosed.
  • the spectrometer may be configured to increase a sample emission signal without significantly increasing background signal.
  • the spectrometer may be configured to increase the sample emission signal at least about five-times or more, when compared with the emission signal of a device not including a boost device or a device operating with a boost device turned off.
  • the emission signal may be increased, e.g., about five times or more, without a substantial increase in background signal using a boost device.
  • a device for OES that includes an inductively coupled plasma and at least one boost device is disclosed.
  • the OES device may be configured to dilute the sample with a carrier gas by less than about 15:1. In certain other examples, the OES device may be configured to dilute the sample with a carrier gas by less than about 10:1. In yet other examples, the OES device may be configured to dilute the sample with a carrier gas by less than about 5:1.
  • a spectrometer comprising an inductively coupled plasma and at least one boost device is provided. In certain examples, the spectrometer may be configured to at least partially block the signal from the primary plasma discharge.
  • a spectrometer including at least one boost device and configured for low UV measurements is provided.
  • the chamber comprising the boost device may be fluidically coupled to a vacuum pump to draw sample into the chamber.
  • the chamber comprising the boost device may also be optically coupled to a window or an aperture on a spectrometer such that substantially no air or oxygen may be in the optical path.
  • a method of enhancing atomization of species using a boost device includes introducing a sample into an atomization device, and providing radio frequency energy from at least one boost device during atomization of the sample to enhance atomization.
  • the atomization device may include any of the atomization sources with boost devices disclosed herein or other suitable atomization sources that will be selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • a method of enhancing excitation of atomized species using a boost device is disclosed.
  • Certain embodiments of this method include introducing a sample into an atomization device, atomizing and/or exciting the sample using the atomization device, and enhancing excitation of the atomized sample by providing radio frequency energy from at least one boost device.
  • the atomization device may include any of the atomization sources with boost devices disclosed herein and other suitable atomization sources that will be selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • a method of enhancing detection of chemical species includes introducing a sample into an atomization device configured to desolvate and atomize the sample, and providing radio frequency energy from at least one boost device to increase a detection signal from the atomized sample.
  • a method of detecting arsenic at levels below about 0.6 ⁇ g/L includes introducing a sample comprising arsenic into an atomization device configured to desolvate and atomize the sample, and providing radio frequency energy from at least one boost device to provide a detectable signal from an introduced sample comprising arsenic at levels less than about 0.6 ⁇ g/L.
  • the sample signal to background signal ratio may be at least three or greater.
  • Certain embodiments of this method include introducing a sample comprising cadmium into an atomization device configured to desolvate and atomize the sample, and providing radio frequency energy from at least one boost device to provide a detectable signal from an introduced sample comprising cadmium at levels less than about 0.014 ⁇ g/L.
  • the sample signal to background signal ratio may be at least three or greater.
  • a method of detecting lead at levels below about 0.28 ⁇ g/L includes introducing a sample comprising selenium into an atomization device configured to desolvate and atomize the sample, and providing radio frequency energy from at least one boost device to provide a detectable signal from an introduced sample comprising lead at levels less than about 0.28 ⁇ g/L.
  • the sample signal to background signal ratio may be at least three or greater.
  • Certain embodiments of this method include introducing a sample comprising selenium into an atomization device configured to desolvate and atomize the sample, and providing radio frequency energy from at least one boost device to provide a detectable signal from an introduced sample comprising selenium at levels less than about 0.6 ⁇ g/L.
  • the sample signal to background signal ratio may be at least three or greater.
  • a method of separating and analyzing a sample comprising two or more species includes introducing a sample into a separation device, eluting individual species from the separation device into an atomization device comprising at least one boost device, and detecting the eluted species.
  • the atomization device may be configured to desolvate and atomize the eluted species.
  • the separation device may be a gas chromatograph, a liquid chromatograph (or both) or other suitable separation devices that will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the devices disclosed herein may be used, or adapted for use, in numerous applications, including but not limited to chemical reactions, welding, cutting, assembly of portable and/or disposable devices for chemical analysis, disposal or treatment of radioactive waste, deposition of titanium on turbine engines, etc.
  • FIG. 1 is a first example of a boost device, in accordance with certain examples
  • FIGS. 2A and 2B are examples of a boost device configured for use with a flame or primary plasma source, in accordance with certain examples
  • FIGS. 2C and 2D are examples of a boost device comprising a microwave cavity, in accordance with certain examples
  • FIGS. 3A and 3B are examples of pulsed and continuous mode application of a boost device, in accordance with certain examples;
  • FIGS. 4A and 4B are exam pies of a boost device, in accordance with certain examples;
  • FIG. 5 is an example of an atomization device including a boost device, in accordance with certain examples
  • FIG. 6 is another example of an atomization device including a boost device, in accordance with certain examples.
  • FIG. 7 is an example of an atomization device with an electrothermal atomization source and a boost device, in accordance with certain examples
  • FIG. 8 is an example of an atomization device with a plasma source and a boost device, in accordance with certain examples;
  • FIG. 9A is an example of a inductively coupled plasma, in accordance with certain examples;
  • FIG. 9B is an example of a helical resonator, in accordance with certain examples.
  • FIG. 10 is another example of an atomization device including a plasma source and a boost device, in accordance with certain examples;
  • FIG. HA is an example of radial monitoring and FIG. HB is an example of axial monitoring, in accordance with certain examples;
  • FIG. 12 is an example of an atomization device including a plasma source, a first boost device and a second boost device, in accordance with certain examples;
  • FIGS. 13A and 13B are examples of a second chamber including a manifold or interface, in accordance with certain examples;
  • FIG. 14A is an example of an atomization device with a first chamber with a flame or primary plasma source and a second chamber including a boost device, in accordance with certain examples;
  • FIG. 14B is an example of another boost device configuration suitable for providing energy to a chamber, such as, for example, the second chamber in FIG. 14A, in accordance with certain examples;
  • FIG. 15 is an example of a first chamber with a plasma source and a second chamber including a boost device, in accordance with certain examples;
  • FIG. 16 is an example of a first chamber with a plasma source and a second chamber including a first boost device and a second boost device, in accordance with certain examples;
  • FIG. 17 is an example of device for optical emission spectroscopy that includes a boost device, in accordance with certain examples.
  • FIG. 18 is an example of a single beam device for absorption spectroscopy that includes a boost device, in accordance with certain examples;
  • FIG. 19 is an example of a dual beam device for absorption spectroscopy that includes a boost device, in accordance with certain examples
  • FIG. 20 is an example of a device for mass spectroscopy that includes a boost device, in accordance with certain examples
  • FIG. 21 is an example of a device for infrared spectroscopy that includes a boost device, in accordance with certain examples
  • FIG. 22 is an example of a device with a boost device suitable for use in fluorescence spectroscopy, phosphorescence spectroscopy or Raman scattering, in accordance with certain examples;
  • FIG. 23 is an example of a gas chromatograph that may be hyphenated to devices including a boost device, in accordance with certain examples;
  • FIG. 24 is an example of a liquid chromatograph that may be hyphenated to devices including a boost device, in accordance with certain examples;
  • FIG. 25 is an example of a nuclear magnetic resonance spectrometer suitable for use with devices including a boost device, in accordance with certain examples;
  • FIG. 26A is an example of a welding torch including a boost device, in accordance with certain examples.
  • FIG. 26B is an example of a DC or AC arc welder comprising a boost device, in accordance with certain examples;
  • FIG. 26C is another example of a DC or AC arc welder comprising a boost device, in accordance with certain examples
  • FIG. 26D is an example of a device configured for use in soldering or brazing that comprises a boost device, in accordance with certain examples
  • FIG. 27 is an example of plasma cutter that includes a boost device, in accordance with certain examples.
  • FIG. 28 is an example of vapor deposition device that includes a boost device, in accordance with certain examples.
  • FIG. 29 is an example of a sputtering device that includes a boost device, in accordance with certain examples;
  • FIG. 30 is an example of device for molecular beam epitaxy that includes a boost device, in accordance with certain examples
  • FIG. 31 is an example of a reaction chamber that includes a first boost device and optionally a second boost device, in accordance with certain examples;
  • FIG. 32 is an example of a device suitable for treating radioactive waste that includes a boost device, in accordance with certain examples
  • FIG. 33 is an example of a device for providing a light source that includes a boost device, in accordance with certain examples;
  • FIG. 34 is an example of a device including an atomization source and a microwave source, in accordance with certain examples;
  • FIG. 35 is an example of the computer controlled hardware setup, in accordance with certain examples.
  • FIG. 36 is an example of an excitation source to generate a plasma, in accordance with certain examples.
  • FIGS. 37-39 show a supply and control box used to provide power to a boost device, in accordance with certain examples
  • FIG. 40 shows a control board that was used with the supply and control box shown in FIGS. 37-39, in accordance with certain examples
  • FIG. 41 is a schematic of the circuitry used with the supply and control box shown in FIGS. 37-39, in accordance with certain examples
  • FIG. 42 is a picture of a wire from an interface board from a plasma excitation source to a solid state relay in the supply and control box shown in FIGS. 37-39, in accordance with certain examples;
  • FIG. 43 is a solid state relay in the supply and control box shown in FIGS. 37-39, in accordance with certain examples;
  • FIG. 44 is a configuration for providing power to the boost device control box shown in FIGS. 37-39, in accordance with certain examples;
  • FIG. 45 shows placement of an optical plasma sensor above an atomization device, in accordance with certain examples;
  • FIGS. 46 and 47 show a manually controlled hardware setup, in accordance with certain examples
  • FIG. 48 is a hardware setup used in Example 3 described below, in accordance with certain examples.
  • FIG. 49 shows certain components used in Example 3 including a nebulizer and an injector, in accordance with certain examples
  • FIG. 50 is a picture of a device including a chamber with a plasma and a boost device turned off, in accordance with certain examples;
  • FIG. 51 is a picture of a device including a chamber with a plasma and a boost device turned on, in accordance with certain examples;
  • FIG. 52 is a hardware setup that was used in Example 4, in accordance with certain examples.
  • FIG. 53 shows certain components of the hardware setup shown in FIG. 52 including an interface and heat sinks, in accordance with certain examples
  • FIG. 54 is an enlarged view of a boost device that includes a 17 Vi turn coil, in accordance with certain examples
  • FIG. 55 shows the front mounting block of second chamber used in the hardware setup of FIG. 52, in accordance with certain examples;
  • FIG. 56 shows the mounting interface plate of the second chamber used in hardware setup of FIG. 52, in accordance with certain examples;
  • FIG. 57 shows the rear mounting block of the second chamber used in the hardware setup shown in FIG. 52, in accordance with certain examples;
  • FIG. 58 shows the rear mounting block of the second chamber with a quartz viewing window mounted, in accordance with certain examples;
  • FIG. 59 is a picture of a vacuum pump and power supply suitable for use in a computer controlled hardware setup, in accordance with certain examples;
  • FIG. 60 is a picture of a vacuum pump that was used in performing Example 4 described below, in accordance with certain examples;
  • FIG. 61 is a picture of a device including a first chamber with a plasma and a second chamber with a boost device turned off, in accordance with certain examples;
  • FIGS. 62A-62D are pictures of a device including a first chamber with a plasma and a second chamber with a boost device turned on, in accordance with certain examples;
  • FIG. 63 is a radial view of a schematic of an atomization source suitable for use with the boost devices disclosed here, in accordance with certain examples;
  • FIG. 64 is a radial view of another schematic of an atomization source suitable for use with the boost devices disclosed here and viewed radially, in accordance with certain examples;
  • FIG. 65 is a radial view of a schematic of an atomization source with a boost device, in accordance with certain examples
  • FIG. 66 is radial view of another schematic of an atomization source with a boost device, in accordance with certain examples.
  • FIG. 67 is a radial view of an enlarged schematic of an atomization device with a boost device turned off, in accordance with certain examples;
  • FIG. 68 is radial view of an enlarged schematic of an atomization device with a boost device turned on, in accordance with certain examples
  • FIG. 69 is an axial view of an atomization device, in accordance with certain examples.
  • FIG. 70 is an axial view of an atomization device with a boost device turned off, in accordance with certain examples
  • FIG. 71 is an axial view of an atomization device with a boost device turned on, in accordance with certain examples;
  • FIG. 72 is a radial view of an inductively coupled plasma suitable for use with the boost devices disclosed here, in accordance with certain examples;
  • FIG. 73 is a radial view, through a piece of welding glass, of an inductively coupled plasma suitable for use with the boost devices disclosed here, in accordance with certain examples;
  • FIG. 74 is a radial view of the effect of RF power on emission path length of 1000 ppm of yttrium introduced into an inductively coupled plasma, in accordance with certain examples;
  • FIG. 75 is a radial view of a plasma discharge and optical emission of 1000 ppm yttrium introduced into an inductively coupled plasma, in accordance with certain examples;
  • FIG. 76 is a radial view of a plasma discharge and optical emission of 1000 ppm yttrium introduced into an inductively coupled plasma and viewed through a piece of welding glass, in accordance with certain examples;
  • FIG. 77 is a device including an inductively coupled plasma source and a boost device, in accordance with certain examples;
  • FIG. 78 is a radial view through a piece of welding glass of a plasma discharge and optical emission of 500 ppm yttrium introduced into an inductively coupled plasma with the boost device turned off, in accordance with certain examples;
  • FIG. 79 is a radial view through a piece of welding glass of a plasma discharge and optical emission of 500 ppm yttrium introduced into an inductively coupled plasma with the boost device turned on, in accordance with certain examples;
  • FIG. 80 is a perspective view of a device including an inductively coupled plasma source and a boost device, in accordance with certain examples;
  • FIG. 81 is an axial view of a device including an inductively coupled plasma source and a boost device with the plasma turned off, in accordance with certain examples;
  • FIG. 82 is an axial view of the emission from 500 ppm of yttrium in an inductively coupled plasma with a boost device turned off, in accordance with certain examples;
  • FIG. 83 is an axial view of the emission from 500 ppm of yttrium in an inductively coupled plasma with a boost device turned on, in accordance with certain examples;
  • FIG. 84 is an axial view of the emission from water in an inductively coupled plasma with a boost device turned off, in accordance with certain examples;
  • FIG. 85 is an axial view of the emission from water in an inductively coupled plasma with a boost device turned on, in accordance with certain examples;
  • FIG. 86 is a perspective view of a device including a first chamber for generating an inductively coupled plasma and a second chamber with a boost device, in accordance with certain examples;
  • FIG. 87 is a perspective view looking from the first chamber towards the interface of the second chamber with a boost device, in accordance with certain examples;
  • FIG. 88 is a top view between the terminus of the first chamber and the interface of the second chamber with a boost device, in accordance with certain examples;
  • FIG. 89 is a perspective view looking from the second chamber towards the interface and the boost device, in accordance with certain examples;
  • FIG. 90 is a picture of a vacuum pump and flow meter suitable for use with the second chamber shown in FIGS. 58-61, in accordance with certain examples;
  • FIG. 91 is an axial view of the emission from 500 ppm of aspirated sodium in the second chamber with a 6 Vi turn boost device turned on, in accordance with certain examples;
  • FIG. 92 is an axial view of the emission from 500 ppm of aspirated sodium using a second chamber with a 18 Vz turn boost device to extend the path length observed in the device of FIG. 91, in accordance with certain examples;
  • FIG. 93 is an axial view of the emission from 500 ppm of aspirated sodium using a second chamber with a 18 Vz turn boost device and higher RF power to increase the emission intensity, in accordance with certain examples;
  • FIG. 94 is a perspective view of a candle in a microwave oven with the microwave oven turned off, in accordance with certain examples
  • FIG. 95 is a perspective view of a flame source in a microwave oven with the microwave over turned on and as the candle flame passes through a standing voltage maxima, in accordance with certain examples;
  • FIG. 96A is a perspective view of a device that includes a single power source for powering a primary induction coil and a boost device, in accordance with certain examples;
  • FIG. 96B shows the optical emission of an yttrium sample using the device of FIG.
  • FIG. 96C is an examples of a device with a primary and secondary chamber and comprising a single RF source for powering a primary induction coil and a boost device, in accordance with certain examples;
  • FIG. 97 is close-up radial view of the emission from 1000 ppm of aspirated yttrium using the device of FIG. 96A, in accordance with certain examples;
  • FIGS. 98A is a photograph of an existing ICP-OES configuration
  • FIG. 98B is a schematic of an optical emission spectrometer configured for use in low UV measurements
  • FIG. 98C is a photograph of the configuration of FIG. 98B in operation, in accordance with certain examples;
  • FIG. 99 is a schematic of a spectrometer configured for use in low UV measurements, in accordance with certain examples.
  • the boost devices disclosed here represent a technological advance.
  • Methods and/or devices including at least one boost device have numerous and widespread uses including, but not limited to, chemical analysis, chemical reaction chambers, welders, destruction of radioactive waste, plasma coating processes, vapor deposition processes, molecular beam epitaxy, assembly of pure light sources, low UV measurements, etc. Additional uses will be readily recognized by the person of ordinary skill in the art, given the benefit of this disclosure.
  • boost devices may be configured with suitable shielding to prevent unwanted interference with other components included in the devices.
  • boost devices may be contained within lead chambers to shield other electrical components from the radio frequencies generated by the boost devices.
  • one or more ferrites may be used to minimize or reduce RF signals that might interfere with electronic circuitry.
  • boost devices disclosed here may take numerous forms, such as, for example, a coil of wire electrically coupled to a radio frequency generator and/or radio frequency transmitter.
  • boost devices may include one or more circular plates or coils in electrical communication with a RF generator.
  • the boost device may be constructed by placing a coil of wire in electrical communication with a radio frequency generator. The coil of wire may be wrapped around a chamber to supply radio frequencies to the chamber.
  • the boost devices may be in electrical communication with a primary RF generator, such as an RF source used to power a primary induction coil. That is, in certain examples, the devices disclosed herein may include a single RF generator that is used to power both a primary energy source, e.g., an atomization source such as a plasma, as well as one or more boost devices.
  • a primary RF generator such as an RF source used to power a primary induction coil.
  • the devices disclosed herein may include a single RF generator that is used to power both a primary energy source, e.g., an atomization source such as a plasma, as well as one or more boost devices.
  • a boost device can be understood to be one or more secondary RF energy sources, that, for example, may be coupled to a RF generator that may also be coupled to one or more primary RF energy sources.
  • devices disclosed herein may include one or more stages.
  • a device may include a desolvation stage that removes liquid solvent from a sample, an ionization stage that may convert atoms to ions and/or one or more excitation stages that may provide energy to excite atoms.
  • the boost devices disclosed herein may be used in any one or more of these stages to provide additional energy.
  • FIG. 1 an example of a boost device is shown in FIG. 1.
  • a boost device 200 is shown coiled around a chamber 205.
  • the boost device 200 includes radio frequency coils 210 electrically coupled to an RF generator 215.
  • the boost device 210 is configured to provide radio frequency signals into the chamber 205.
  • the exact frequency and power may vary depending on numerous factors including, but not limited to, the desired effect, the configuration of the chamber, etc.
  • the boost device provides signals at a frequency of about 25 MHz to about 50 MHz, more particularly about 35 MHz to about 45 MHz, e.g., about 40.6 MHz.
  • the boost device provides signals at a frequency of about 5 MHz to about 25 MHz, more particularly about 7.5 to about 15 MHz, e.g., about 10.4 MHz.
  • the frequency ranges from about 1 kHz to about 100 GHz.
  • the energy may be inductively coupled with the use of load coils or induction coils, such as those described in commonly owned U.S. Application No. 10/730,779, the entire disclosure of which is hereby incorporated herein by reference for all purposes.
  • the energy may be capacitively coupled using plates or conductive coatings.
  • helical resonators or cavities may be used.
  • Other suitable frequencies will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure, for various applications.
  • the boost device may provide radio frequencies at a power of about 1 Watt to about 10,000 Watts, more particularly about 10 Watts to about 5,000 Watts.
  • the boost device provides radio frequencies at a power of about 100 Watts to about 2,000 Watts.
  • a plasma is formed in a small capillary, such as a GC capillary tube. using a dry gas, then a power of 1 watt or less may be used.
  • a large secondary chamber e.g., having dimensions similar to a large fluorescent light tube, and high solvent loads are used, then powers as large as 10,000 watts or higher may be desirable to provide the desired results.
  • Other suitable powers will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • Suitable devices for providing radio frequency signals include, but are not limited to, radio frequency transmitters commercially available from numerous sources such as ENI, Trazar, Hunttinger and Nautel, and radio frequency circuits such as Impedance Matching Networks from ENI, or Trazar.
  • Suitable circuitry for generating radio frequencies will be readily selected and/or designed by the person of ordinary skill in the art, given the benefit of this disclosure.
  • two or more radio frequency coils are used with each radio frequency coil being tuned to the same frequency or a different frequency and/or providing radio frequencies at the same power or a different power.
  • Other configurations will be selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the boost devices disclosed here may be configured to provide additional energy to "boost” or increase the energy already present in a chamber, such as the chamber of an atomization device that includes an atomization source.
  • atomization device is used in the broad sense and is intended to include other processes that may take place in the chamber, such as desolvation, vaporization, ionization, excitation, etc.
  • Atomization source refers to a heat source that is operative to atomize, desolvate, ionize, excite, etc. species introduced into the atomization source.
  • Suitable atomization sources for various applications will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure, and exemplary atomization sources include, but are not limited to, flames, plasmas, arcs, sparks, etc. [163] Without wishing to be bound by any particular scientific theory or by this example, understanding of certain aspects may be had with reference to the introduction of a liquid sample. As liquid sample is introduced into an atomization device, an atomization source within the chamber may rapidly cool, due to desolvation. That is, a material amount of energy may be used to convert the liquid solvent into a gas, which may result in a decrease in temperature (or other loss of energy) of the atomization source.
  • atomization device 300 includes a chamber 305 that is surrounded by an induction coil 310 in communication with a radio frequency generator 315. Atomization source is shown in a first state 320 and is contained within chamber 305. In the example shown in FIG.
  • the radio frequency generator 315 is turned off such that no radio frequencies are provided to radio frequency coils 310.
  • radio frequencies are provided to chamber 305, which results in conversion of the atomization source from the first state 320 to a second state 330.
  • a result of application of radio frequencies to chamber 305 is the extension of the atomization source along the axial and/or radial lengths of the chamber to provide an increased effective area of energy for atomizing, ionizing and exciting a sample.
  • FIGS. 2C and 2D an additional example of adding energy to enhance atomization and/or ionization of chemical species is shown in FIGS. 2C and 2D. Referring to FIG.
  • a high frequency source 250 which may be, for example, a 2.54 gigahertz magnetron, may be configured to be electrically coupled with a power supply 252 and a waveguide adapter 254.
  • An electrical lead 256 provides electrical communication between a waveguide adapter 254 and a circulator 258, which itself may be electrically coupled to a coaxial resistor load 260, e.g., a 50 ohm load.
  • the circulator 258 is in electrical communication with a microwave cavity 262, which is operative to provide radio frequencies into a chamber 264, which passes through the microwave cavity 262.
  • the high frequency source 250 is turned off so that no radio frequencies are transmitted to the microwave cavity 262 or the chamber 264 and the atomization source remains in a first state 266.
  • FIG. 2D when the high frequency source 250 is turned on, radio frequencies are provided to the chamber 264, which results in conversion of atomization source from a first state 266 to a second state 268.
  • a result of application of radio frequencies to the chamber 264 is the extension of the atomization source along the axial and/or radial lengths of the chamber to provide an increased effective area of energy for atomizing, ionizing and exciting a sample.
  • Illustrative waveguide adapters may be fabricated, for example, using cross-bar mode transducers, which are commercially available from numerous sources, and by reference to numerous publications, such as, for example, the "ITT Reference Data for Radio Engineers (Sixth Edition)" section under “Waveguides and Resonators.”
  • Microwave cavities may be commercially obtained from numerous sources or will be readily fabricated by the person of ordinary skill in the art, given the benefit of this disclosure, and optionally with the guidance of C. J. M. Beenakker, Spectrochimica Acta, Vol. 3 IB, pp. 483 to 486 Pergamon Press 1976.
  • the person of ordinary skill in the art may be able to extend the length of an atomization source by a selected or suitable amount.
  • the length of the atomization source may be extended by using the boost devices.
  • the atomization source may be extended by at least about three times its normal length along a longitudinal axis of a chamber using a boost device as disclosed herein.
  • the atomization source may be extended by at least about five times its normal length along the longitudinal axis of the chamber or at least about ten times it normal length along the longitudinal axis of the chamber using a boost device as disclosed herein.
  • the boost devices may be operated in a pulsed or continuous mode.
  • pulsed mode refers to providing radio frequencies in a non-continuous manner by providing radio frequencies followed by a delay before any subsequent radio frequencies are provided to the chamber.
  • channel A represents radio frequencies provided to a chamber, such as chamber 205 shown in FIG. 1.
  • Channel B represents the time intervals in which any resulting signal is measured from the chamber, using, for example, a detector such as those discussed herein.
  • the example shown in FIG. 3A is based on sampling of a detectable signal when radio frequencies are not provided.
  • FIGS. 4A and 4B an additional example of a boost device is shown in FIGS. 4A and 4B. In the configuration shown in FIGS.
  • a boost device 400 includes a support or plate 405, a first electrode 410 and a second electrode 420 each mounted to support 405. Each of the first electrode 410 and the second electrode 420 may be configured to receive a chamber within the interior of the electrodes.
  • the support or plate 405 may be electrically coupled to a radio frequency transmitter or generator to provide radio frequencies to the first electrode 410 and the second electrode 420.
  • the first electrode 410 and the second electrode 420 may be operated at the same frequency or may be individually tuned to provide different frequencies.
  • the first electrode 410 may be operated with a radio frequency of about 10 MHz to about 2.54 GHz, and in other examples the second electrode 420 may be operated with a radio frequency of about 100 kHz to about 2.54 GHz. In other examples, the first electrode 410 may be operated with radio frequencies from about 10 MHz to about 200MHz, and second electrode 420 may be operated with radio frequencies from about 100 kHz to about 200 MHz.
  • the first electrode 410 and the second electrode 420 may take the form of the induction coil shown below in FIG. 9 or the induction coils discussed in commonly assigned patent applications U.S. Serial No.
  • radio frequencies from about 20 MHz to about 500 MHz may be provided using, for example, helical resonators, an example of which is shown in FIG. 9B and is discussed in more detail below.
  • the first electrode 410 and the second electrode 420 may be operated using radio frequencies from about 500 MHz to about 5 GHz using a microwave cavity or resonant cavity, an example of which is shown in FIG. 2C.
  • Atomization device 500 includes a chamber 505, a flame source 510, and a boost device 520.
  • the boost device 520 is electrically coupled to support 530, which itself may be electrically coupled to radio frequency transmitter or generator or both (not shown).
  • the chamber 505 may be constructed of suitable materials, such as quartz, and may include a cooling tube or jacket (not shown) to surround the chamber to reduce the temperatures experienced by the boost device.
  • the flame source 510 may be any suitable flame, such as a methane/air flame, a methane/oxygen flame, hydrogen/air flame, a hydrogen/oxygen flame, an acetylene/air flame, an acetylene/oxygen flame, an acetylene/nitrous oxide flame, a propane/air flame, a propane/oxygen flame, a propane/nitrous flame, a naphtha/air flame, a naphtha/oxygen flame, a natural gas/nitrous flame, a natural gas/air flame, a natural gas/oxygen flame and other flames that may be generated using a suitable fuel source and a suitable oxidant gas.
  • Such flames may generally be created by introducing fuel and oxygen in selected ratios and igniting the mixture with a spark, arc, flame or the like.
  • the exact temperature of the flames may vary depending on the fuel and oxidant gas source and depending on the distance from the burner tip. For example, the highest flame temperatures are typically found slightly above the primary combustion zone with lower temperatures in the interconal region and in the outer cone. In at least certain examples, the temperature of at least some portion of the flame may be at least about 1700 0 C.
  • a natural gas/air flame may have a temperature of about 1700-1900 0 C
  • a natural gas/oxygen flame may have a temperature of about 2700-2900 0 C
  • a hydrogen/oxygen flame may have a temperature of about 2550-2700 0 C.
  • flame sources may be efficient at desolvation in some applications, but inefficient at atomization and ionization due to relatively low temperatures.
  • the efficiency of ionization and/or atomization may be increased using flame sources, such as hydrogen/oxygen flames, in combination with a boost device.
  • boost devices disclosed here in combination with a hydrogen/oxygen flame, it may be possible to achieve the benefits of having a high heat capacity of a flame for desolvation and (e.g., followed by) extreme plasma temperatures for greater excitation.
  • This result is advantageous for several reasons including, but not limited to, reduced operating costs, simpler design, less RF noise, better signal-to-noise ratios, etc., although not every embodiment will meet or address one or more of these advantages.
  • a flame may tolerate increased sample loading while leaving the RF power from the boost device available for sample ionization.
  • a "water welder” may be used to decompose any produced water to its elements of hydrogen and oxygen. Suitable water welders are commercially available, for example, from SRA (Stan Rubinstein Assoc.) or KingMech Co., LTD.
  • the flame (in certain embodiments) also preferably should not present significant additional background signal than the background observed with the desolvation of aqueous samples.
  • suitable atomization devices including flame sources and boost devices.
  • a fluid sample may be introduced into the flame to desolvate the sample.
  • Desolvation may (in certain embodiments) be accomplished by spraying the species into the chamber in the form of a fine mist.
  • Suitable devices for creating mists of species include nebulizers such as those commercially available from J.E. Meinhard Assoc. Inc or CPI International.
  • a fluid sample may be introduced into a nebulizer and may be mixed with an aerosol carrier gas, such as argon, neon, etc. The carrier gas nebulizes the liquid sample droplets to provide finely divided droplets that may be carried into the atomization device.
  • Suitable devices for delivering samples to the atomization device will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure, and illustrative devices include, but are not limited to, a concentric nebulizer, a cross-flow nebulizer, an ultrasonic nebulizer and the like.
  • fluid may be vaporized from the sample by a flame or a primary plasma.
  • Chemical species in the sample may be atomized and/or ionized using the energy produced by the flame or the primary plasma.
  • the boost device may be used to provide radio frequencies to chamber 505.
  • Boost device may be configured to provide additional energy such that energy lost due to desolvation is restored by the boost, and, in certain examples, the total energy in the chamber exceeds the amount of energy present when only a flame or primary plasma is used.
  • atomization devices including the boost devices disclosed here may allow for the use of reduced amounts of sample due to the higher efficiency of atomization and ionization.
  • Atomization device 600 includes a chamber 605, a flame or primary plasma 610, and a boost device 620.
  • the boost device 620 includes a support 630, which may be electrically coupled to a radio frequency transmitter or generator (not shown).
  • the boost device 620 has been positioned downstream from the flame or primary plasma 610 in the "ionization region" of chamber 605.
  • the ionization region refers to the region of a chamber where signal is measured or detected.
  • the desolvation region is referred to in some instances herein as the desolvation region and region 660 is referred to in some instances herein as the ionization region. It will be understood by the person of ordinary skill in the art, given the benefit of this disclosure, however, the desolvation may occur at least to some extent in the ionization region and detection of chemical species may occur at least to some extent in the desolvation region depending on the exact configuration of the device, and it will also be understood by the person of ordinary skill in the art, given the benefit of this disclosure, that there need not be fixed or discrete boundaries that separate the desolvation and ionization regions. As sample is introduced into the flame or primary plasma 605, the flame or primary plasma 605 desolvates, atomizes, ionizes and/or excites the sample.
  • the atomized and/or ionized sample may be carried downstream toward boost device 620 using for example an assist or carrier gas such as nitrogen gas, argon gas, etc.
  • the atoms and ions may not be excited when exiting the desolvation region and in certain embodiments provide little or no detectable signal.
  • boost device 620 atomized and/or ionized sample that enters the ionization region may be excited to provide a detectable signal.
  • atoms and ions may be excited by the radio frequencies introduced by boost device 620 such that optical emission occurs, which may be detected using suitable detectors as discussed in more detail below.
  • An atomization device 700 includes a chamber 705, an electrothermal atomizer 710, a boost device 720 and a radio frequency generator 730.
  • Electrothermal atomizers such as graphite tubes or cups, atomize sample by first evaporating liquid from the sample at a relatively low temperature (e.g., about 1200 0 C) and then ashing the sample at a higher temperature (e.g., about 2000-3000 0 C), which results in atomization of the sample.
  • the atomized sample may be carried down chamber 705 using a carrier gas, such as argon, nitrogen, etc., and may be excited for detection using the boost device 720.
  • a carrier gas such as argon, nitrogen, etc.
  • An atomization device 800 includes a chamber 805, a plasma 810, and a boost device 820.
  • the boost device 820 includes a support which may be in electrical communication with a radio frequency generator 830.
  • plasmas suffer less than flames from interferences, such as oxide formation, because of the higher temperatures of the plasmas.
  • spectra may be obtained from a plurality of sample species under a single set of conditions, which allows for measurement of many species simultaneously. The higher temperatures in the plasmas may also provide improved detection limits and be useful for detection of non-metal species.
  • a plasma may be created when a gas, such as argon, is excited and/or ionized to form ions and electrons, and in certain instances cations.
  • the ions may be maintained at high temperatures by using an external power source, such as a DC electrical source.
  • an external power source such as a DC electrical source.
  • two or more electrodes may be positioned around high temperature argon ions and electrons to provide current between the electrodes to maintain the plasma temperature.
  • Other suitable power sources for sustaining plasmas include, but are not limited to, radio frequency induction coils, such as those used in inductively coupled plasmas, and microwaves, such as those used in microwave induced plasmas.
  • an inductively coupled plasma device is described below, but the boost devices disclosed herein may be readily used with other plasma devices.
  • inductively coupled plasma device 900 includes chamber 905 comprising three or more tubes, such as tubes 910, 920 and 930.
  • the tube 910 is in fluid communication with a gas source, such as argon, and a sample introduction device.
  • the argon gas aerosolizes the sample and carries it into the desolvation and ionization regions of a plasma 940.
  • the tube 920 may be configured to provide tangential gas flow throughout the tube 930 to isolate plasma 940 from the tube 930.
  • gas is introduced through inlet 950, and the tangential flow acts to cool the inside walls of center tube 910 and centers plasma 940 radially.
  • Radio frequency inductions coils 960 may be in electrical communication with a radio frequency generator (not shown) and are configured to create plasma 940 after the gas is ionized using an arc, spark, etc.
  • a radio frequency generator not shown
  • the person of ordinary skill in the art, given the benefit of this disclosure, will be able to select or design suitable plasmas including, but not limited to inductively coupled plasmas, direct current plasmas, microwave induced plasmas, etc., and suitable devices for generating plasmas are commercially available from numerous manufacturers including, but not limited to, PerkinElmer, Inc., Varian Instruments, Inc. (Palo Alto, CA), Teledyne Leeman Labs, (Hudson, NH), and Spectro Analytical Instruments (Kleve, Germany).
  • a helical resonator 970 comprises an RF source 972, an electrical lead 974, which typically is a coaxial cable, configured to provide electrical communication with a coil 976 in a resonant cavity 978.
  • the resonant cavity 974 with the coil 978 may be configured to receive a chamber.
  • radio frequencies from about 20 MHz to about 500 MHz may be provided using, for example, helical resonators.
  • Exemplary dimensional information for construction of helical resonators may be found, for example, in the International Telephone and 22, Reference Data for Radio Engineers. Fifth Edition. Referring again to FIG.
  • sample may be introduced into the plasma 810.
  • desolvation of the sample may reduce the temperature of the plasma and may result in lesser amounts of energy available for atomization and ionization.
  • the boost device 820 may be used to provide radio frequencies to boost the energy in the plasma to increase the efficiency of atomization and ionization.
  • the boost device 820 may be positioned such that the energy in the desolvation region 840 is increased to promote more efficient desolvation which may provide more atoms and ions to generate a detectable signal in the ionization region 850.
  • An atomization device 1000 includes a chamber 1005, a plasma 1010, and a boost device 1020.
  • the boost device 1020 includes a support 1030, which may be in electrical communication with a radio frequency transmitter or generator (not shown).
  • the atomization device 1000 also includes radio frequency induction coils 1035 which are constructed and arranged to maintain plasma 1010, which is shown as a torus.
  • the boost device 1020 is positioned downstream from a desolvation region 1040 in an ionization region 1050.
  • Introduction of a sample into plasma 1010 may result in a decrease in plasma temperature as energy in the plasma is used to desolvate the sample. This temperature decrease may reduce the efficiency of ionization and atomization and may reduce the number of ions and atoms that are excited.
  • ions and atoms that travel down the chamber 1005 to the ionization region 1050 may be excited.
  • radio frequencies at about 11 MHz and at a power of about 1.2 kilowatts may be provided to an analytical region 1050 to excite atoms and ions present in the ionization region.
  • the excited atoms may be detected using suitable methods such as optical emission spectroscopy.
  • the ionization region may be extended almost indefinitely by placing one or more boost devices along the ionization region of chamber 1005.
  • the boost devices may be configured in stages and may be individually tuned to different frequencies and/or powers. The person of ordinary skill in the art, given the benefit of this disclosure, will be able to detect excited ions and atoms using the atomization devices disclosed here along with suitable optics, detectors and the like.
  • the signal originating from excited atoms and/or ions may be viewed or detected at least two ways.
  • Any signal from a chamber 1105 may be viewed in at least one of two directions - axially or radially.
  • signal from the chamber 1105 may be monitored in one or more planes parallel to the radius of the chamber 1105.
  • a detector may be positioned to detect signals that are emitted in the direction of arrow X in FIG. 1 IA.
  • signal from the chamber 1105 may be monitored or detected in one or more planes parallel to the axis of the chamber.
  • a detector may be positioned to detect signals that are emitted in the direction of arrow Y in FIG. 1 IB.
  • axial and radial detection are not limited to optical emissions but may be used to detect signals from numerous other analytical techniques including absorption, fluorescence, phosphorescence, scattering, etc.
  • an atomization device that includes at least two boost devices is shown in FIG. 12.
  • An atomization device 1200 may include a chamber 1205 and a radio frequency induction coil 1210 configured to generate a plasma 1215.
  • the atomization device 1200 may also include a first boost device 1220 in electrical communication with a support 1230 and a second boost device 1240 in electrical communication with a support 1250.
  • a first boost device 1230 and a second boost device 1250 are positioned in the ionization region of the chamber 1205 to provide additional energy to excite atoms and ions present in the ionization region.
  • the boost devices 1230 and 1250 may be configured to provide the same or different frequency of radio frequencies.
  • each of boost devices may be configured to provide radio frequencies of about 15 MHz and at a power of about 1000 Watts.
  • the boost devices 1230 and 1250 may independently provide radio frequencies in either pulsed or continuous modes.
  • the boost device 1230 may provide radio frequencies in a pulsed mode while the boost device 1250 may provide radio frequencies continuously.
  • the boost device 1230 may provide radio frequencies continuously while the boost device 1250 may provide radio frequencies in a pulsed mode.
  • both of boost devices 1230 and 1250 may provide radio frequencies continuously, or both of boost devices 1230 and 1250 may provide radio frequencies in a pulsed mode. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to provide radio frequencies in a selected manner or mode using multiple boost devices. While the configuration shown in FIG.
  • boost device 12 includes two boost devices positioned in the ionization region of chamber 1205, in certain examples one of the boost devices may be positioned in the desolvation region with the second boost device positioned in the ionization region. In yet other examples, both of the boost devices may be positioned in the desolvation region. Additional configurations for arranging two or more boost devices along a chamber will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • a chamber comprising a manifold or interface.
  • a chamber 1300 comprises a manifold or interface 1305 in contact with a chamber cavity 1310.
  • the interface 1305 includes a small opening or a port 1320 configured to receive sample.
  • the port 1320 may take numerous sizes and forms.
  • the port may be circular and have a diameter of about 0.25 mm to about 25 mm, more particularly about 4 mm.
  • the port may be rectangular with length and width measurements each about 0.25 mm to about 4 mm.
  • the port may be positioned centrally, such as the position of port 1320 shown in FIG. 13B, whereas in other examples, the port may be positioned at any selected region or area of the interface. In examples where the port is positioned at the center of the interface, the discharge from the atomization source may be blocked, or partially blocked, by the interface.
  • blockage of the discharge may lower the detection limit due to removal, or reduction, of background signal from the discharge, which may increase the signal-to-noise ratio. This result may be achieved with both axial and radial detection of signals from the chamber 1300.
  • the working pressure of the boosted discharge may have some effect on the spectral emission quality, and may be optimized for the specific operating conditions based on sample, hardware, detection schemes, etc.
  • An example of one way to control the working pressure of the secondary chamber is by controlling the exit gas flow rate and selecting the interface port size. Another example is to select the port diameter and directly control the exit gas pressure. Another example may be to have a higher exhaust flow and provide an additional bleed gas into the chamber.
  • the chamber 1300 may include a vacuum pump (not shown) that may be operative to draw sample through the port 1320 into the secondary chamber for detection.
  • the interface may be configured with a side port or outlet that is in fluid communication with the second chamber.
  • a vacuum pump may be coupled to the side port to draw sample into the chamber 1300.
  • sample diffuses or flows into the secondary chamber, because the pressure in the secondary chamber may be less than the pressure in the atomization source chamber. For example, pressures in chambers including flames are higher than atmospheric pressure due to the high flow rates of gases introduced into the chamber.
  • Pressures in plasmas may be higher than atmospheric pressure due to the high flow rates of gases through the chamber.
  • the pressure of the chamber with the interface is approximately atmospheric pressure such that atoms and ions may flow down a pressure gradient from the high pressure chamber where atomization and/or ionization has occurred to a lower pressure chamber, e.g., where excitation may occur through the use of a boost device as disclosed herein.
  • the person of ordinary skill in the art, given the benefit of this disclosure, will be able to construct suitable chambers with interfaces for receiving and/or detecting atoms and ions generated using one or more atomization sources.
  • an atomization device comprising two or more chambers and a flame or primary plasma source
  • an atomization device 1400 may include a first chamber 1405 and a second chamber 1410.
  • a flame or primary plasma source 1415 may be positioned within the first chamber 1405.
  • the second chamber 1410 may include an interface or manifold 1430 and a boost device 1440, which may be in electrical communication with a support 1450.
  • the second chamber 1410 may also include a vacuum pump 1460 which may be configured to draw atomized or ionized species from the first chamber 1405 into the second chamber 1410, whereas in other examples species flow or diffuse into the second chamber 1410 from the first chamber 1405.
  • a vacuum pump 1460 may be in direct fluid communication with the second chamber 1410 or, in certain other examples, an additional interface may be positioned at the end of the second chamber 1410 and may be configured to provide fluid communication between the second chamber 1410 and the vacuum pump 1460.
  • boost device 1440 may provide radio frequencies to excite the atoms and ions. As discussed herein, such radio frequencies may be provided in a continuous mode or a pulsed mode. Also as discussed herein, radio frequency pulses from the boost device 1440 may be varied during detection of any atoms or species within the second chamber 1410.
  • the second chamber 1410 may also include one or more additional boost devices, or, in certain examples, the first and second chamber are each configured with at least one boost device.
  • the atomization device may include additional chambers any one or more of which may include a boost device. The person of ordinary skill in the art, given the benefit of this disclosure, will be able to design suitable atomization devices that include flame or primary plasma sources and multiple chambers some of which may include a boost device.
  • capacitive coupling may be used to provide additional energy in place of the boost devices.
  • FIG. 14B an axial view of a configuration for capacitive coupling is shown.
  • Conductive plates 1462 and 1464 may be positioned around a chamber, such as a second chamber 1466, e.g., a quartz tube or other non-conductive material, and may be in electrical communication with a high voltage RF source 1468 through electrical leads 1472 and 1474.
  • Capacitive coupling may provide sufficient energy to the chamber to excite and/or ionize atoms in the chamber within the conductive plates 1462 and 1464. Additional configurations using conductive plates and high energy RP sources will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • an atomization device 1500 may include a first chamber 1505 and a second chamber 1510.
  • the first chamber 1505 may be surrounded by a radio frequency induction coil 1520 which may be configured to generate a plasma 1530.
  • the second chamber 1510 also may be configured with a boost device 1540 which may be in electrical communication with a support 1550.
  • the second chamber 1510 may also include an interface 1560 that may be configured to receive a portion of atoms or ions from the first chamber 1505.
  • the second chamber 1510 may also include a vacuum pump (not shown) which may be configured to draw atomized or ionized species from the first chamber 1505 into the second chamber 1510, whereas in other examples species may flow or diffuse into the second chamber 1510 from the first chamber 1505.
  • the second chamber 1510 may include a second interface positioned opposite the interface 1560. The second interface may be configured to provide fluid communication between the second chamber 1510 and a vacuum pump 1570.
  • the boost device 1540 may provide radio frequencies to excite the atoms and ions. As discussed herein, such radio frequencies may be provided in a continuous mode or a pulsed mode.
  • the radio frequency power may be varied during detection of any atoms or species within the second chamber 1510.
  • the second chamber may also include one or more additional boost devices, or, in certain examples, the first and second chamber are each configured with at least one boost device.
  • the atomization device may include additional chambers any one or more of which may include a boost device.
  • the person of ordinary skill in the art, given the benefit of this disclosure, will be able to design suitable atomization devices that include plasma sources and multiple chambers some of which may include a boost device.
  • an atomization device including a first chamber and a second chamber with multiple boost devices is shown in FIG. 16.
  • An atomization device 1600 may include a first chamber 1605 and a second chamber 1610.
  • the first chamber 1605 may be surrounded by a radio frequency induction coil 1620 which may be configured to generate a plasma 1630.
  • the second chamber 1610 may be configured with a first boost device 1640, which may be in electrical communication with a support 1650, and a second boost device 1660, which may be in electrical communication with a support 1665.
  • the second chamber 1610 may also include an interface or manifold 1670 that may be configured to receive a portion of atoms or ions from the first chamber 1605.
  • the second chamber 1610 may also include a vacuum pump 1680 which may be configured to draw atomized or ionized species from the first chamber 1605 into the second chamber 1610, whereas in other examples species may flow or diffuse into the second chamber 1610 from the first chamber 1605.
  • the second chamber 1610 may include a second interface positioned opposite the interface 1670. The second interface may be configured to provide fluid communication between the second chamber 1610 and the vacuum pump 1680.
  • the first boost device 1640 may provide radio frequencies to excite the atoms and ions.
  • the second boost device 1660 may also provide radio frequencies to excite atoms and ions in the second chamber 1610.
  • the radio frequencies supplied by first boost device 1640 and second boost device 1660 may be the same or different.
  • the radio frequencies from each of the boost devices may be provided in a continuous mode or a pulsed mode.
  • the radio frequency power from each boost device may be varied during detection of any atoms or species within the second chamber 1610.
  • the first chamber may also include one or more boost devices.
  • the atomization device may include additional chambers any one or more of which may include one or more boost devices. The person of ordinary skill in the art, given the benefit of this disclosure, will be able to design suitable atomization devices that include multiple chambers including one or more boost devices.
  • an atomization device including a single RP generator in electrical communication with a radio frequency induction coil and a boost device.
  • a single radio frequency generator e.g. a single RF source
  • a specific example of this configuration is described in more detail below with reference to FIG. 96B.
  • the induction coil and the boost device may be designed for different plasma impedances in each region with respect to its location.
  • the inductance value of the induction coil and the boost device may be different to provide devices having different properties and performance characteristics.
  • the properties of the induction coil and the boost device may be varied by varying the diameter, coupling or shape of each of the induction coil and the boost device.
  • the primary RF supply and each of the induction coil and the boost device may be configured to provide radio frequencies of about 40 MHz and at a power of about 1100 Watts in the primary discharge and a power of about 400 watts in the boost device region.
  • two or more coils from a single RF Source may be used, for example, where the primary discharge is separated from the secondary boost region by an interface (as shown in FIG 96C). It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design atomization devices including a single radio frequency generator in electrical communication with a radio frequency induction coil and one or more boost devices.
  • a device for optical emission spectroscopy is shown in FIG. 17.
  • OES optical emission spectroscopy
  • the outermost electrons may undergo transitions which may emit light (potentially including non-visible light).
  • the electron may emit energy in the form of light as it decays to a lower energy state.
  • Suitable wavelengths for monitoring optical emission from excited atoms and ions will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • Exemplary optical emission wavelengths include, but are not limited to, 396.152 nm for aluminum, 193.696 ran for arsenic, 249.772 nm for boron, 313.107 nm for beryllium, 214.440 nm for cadmium, 238.892 nm for cobalt, 267.716 nm for chromium, 224.700 nm for copper, 259.939 nm for iron, 257.610 nm for manganese, 202.031 nm for molybdenum, 231.604 nm for nickel, 220.353 nm for lead, 206.836 nm for antimony, 196.206 nm for selenium, 190.801 nm for tantalum, 309.310 nm for vanadium and 206.200 nm for zinc.
  • OES device 1700 includes a housing 1705, a sample introduction device 1710, an atomization device 1720, and a detection device 1730.
  • the sample introduction device 1710 may vary depending on the nature of the sample.
  • the sample introduction device 1710 may be a nebulizer that is configured to aerosolize liquid sample for introduction into the atomization device 1720.
  • the sample introduction device 1710 may be an injector configured to receive sample that may be directly injected or introduced into the atomization device.
  • Other suitable devices and methods for introducing samples will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the atomization device 1720 may be any one or more of the atomization devices discussed herein or other atomization devices that include a boost device that the person of ordinary skill in the art, given the benefit of this disclosure, may readily design or select.
  • the detection device 1730 may take numerous forms and may be any suitable device that may detect optical emissions, such as optical emission 1725.
  • the detection device 1730 may include suitable optics, such as lenses, mirrors, prisms, windows, band-pass filters, etc.
  • the detection device 1730 may also include gratings, such as echelle gratings, to provide a multi-channel OES device. Gratings such as echelle gratings may allow for simultaneous detection of multiple emission wavelengths. The gratings may be positioned within a monochromator or other suitable device for selection of one or more particular wavelengths to monitor.
  • the detection device 1730 may include a charge coupled device (CCD).
  • the OES device may be configured to implement Fourier transforms to provide simultaneous detection of multiple emission wavelengths.
  • the detection device may be configured to monitor emission wavelengths over a large wavelength range including, but not limited to, ultraviolet, visible, near and far infrared, etc.
  • the OES device 1700 may further include suitable electronics such as a microprocessor and/or computer and suitable circuitry to provide a desired signal and/or for data acquisition. Suitable additional devices and circuitry are known in the art and may be found, for example, on commercially available OES devices such as Optima 2100DV series and Optima 5000 DV series OES devices commercially available from PerkinElmer, Inc.
  • the optional amplifier 1740 may be operative to increase a signal 1735, e.g., amplify the signal from detected photons, and provides the signal to display 1750, which may be a readout, computer, etc. In examples where the signal 1735 is sufficiently large for display or detection, the amplifier 1740 may be omitted.
  • the amplifier 1740 is a photomultiplier tube configured to receive signals from the detection device 1730.
  • Other suitable devices for amplifying signals will be selected by the person of ordinary skill in the art, given the benefit of this disclosure. It will also be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to retrofit existing OES devices with the atomization devices disclosed here and to design new OES devices using the atomization devices disclosed here.
  • the OES devices may further include autosamplers, such as AS90 and AS93 autosamplers commercially available from PerkinElmer, Inc. or similar devices available from other suppliers. [189]
  • a single beam device for absorption spectroscopy (AS) is shown in FIG. 18.
  • atoms and ions may absorb certain wavelengths of light to provide energy for a transition from a lower energy level to a higher energy level.
  • An atom or ion may contain multiple resonance lines resulting from transition from a ground state to a higher energy level.
  • the energy needed to promote such transitions may be supplied using numerous sources, e.g., heat, flames, plasmas, arc, sparks, cathode ray lamps, lasers, etc, as discussed further below. Suitable sources for providing such energy and suitable wavelengths of light for providing such energy will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • a single beam AS device 1800 includes a housing 1805, a power source 1810, a lamp 1820, a sample introduction device 1825, an atomization device 1830, a detection device 1840, an optional amplifier 1850 and a display 1860.
  • the power source 1810 may be configured to supply power to the lamp 1820, which provides one or more wavelengths of light 1822 for absorption by atoms and ions.
  • Suitable lamps include, but are not limited to mercury lamps, cathode ray lamps, lasers, etc.
  • the lamp may be pulsed using suitable choppers or pulsed power supplies, or in examples where a laser is implemented, the laser may be pulsed with a selected frequency, e.g.
  • the exact configuration of the lamp 1820 may vary.
  • the lamp 1820 may provide light axially along the atomization device 1830 or may provide light radially along the atomization device 1830.
  • the example shown in FIG. 18 is configured for axial supply of light from the lamp 1820.
  • the atomization device 1830 may be any of the atomization devices discussed herein or other suitable atomization devices including a boost device that may be readily selected or designed by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the incident light 1822 from the lamp 1820 may excite atoms. That is, some percentage of the light 1822 that is supplied by the lamp 1820 may be absorbed by the atoms and ions in the atomization device 1830. The remaining percentage of the light 1835 may be transmitted to the detection device 1840.
  • the detection device 1840 may provide one or more suitable wavelengths using, for example, prisms, lenses, gratings and other suitable devices such as those discussed above in reference to the OES devices, for example.
  • the signal may be provided to the optional amplifier 1850 for increasing the signal provided to the display 1860.
  • AS device 1800 may further include suitable electronics such as a microprocessor and/or computer and suitable circuitry to provide a desired signal and/or for data acquisition. Suitable additional devices and circuitry may be found, for example, on commercially available AS devices such as AAnalyst series spectrometers commercially available from PerkinElmer, Inc.
  • the AS devices may further include autosamplers known in the art, such as AS-90A, AS-90plus and AS-93plus autosamplers commercially available from PerkinElmer, Inc.
  • a dual beam AS device 1900 includes a housing 1905, a power source 1910, a lamp 1920, an atomization device 1965, a detection device 1980, an optional amplifier 1990 and a display 1995.
  • the power source 1910 may be configured to supply power to the lamp 1920, which provides one or more wavelengths of light 1925 for absorption by atoms and ions.
  • Suitable lamps include, but are not limited to, mercury lamps, cathode ray lamps, lasers, etc.
  • the lamp may be pulsed using suitable choppers or pulsed power supplies, or in examples where a laser is implemented, the laser may be pulsed with a selected frequency, e.g. 5, 10 or 20 times/second.
  • the configuration of the lamp 1920 may vary.
  • the lamp 1920 may provide light axially along the atomization device 1965 or may provide light radially along the atomization device 1965.
  • the example shown in FIG. 19 is configured for axial supply of light from the lamp 1920.
  • the atomization device 1965 may be any of the atomization devices discussed herein or other suitable atomization devices including a boost device that may be readily selected or designed by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the incident light 1925 from the lamp 1920 may excite atoms.
  • the incident light 1925 may be split using a beam splitter 1930 such that some percentage of light, e.g., about 10% to about 90%, may be transmitted as a light beam 1935 to atomization device 1965 and the remaining percentage of the light may be transmitted as a light beam 1940 to lenses 1950 and 1955.
  • the light beams may be recombined using a combiner 1970, such as a half-silvered mirror, and a combined signal 1975 may be provided to the detection device 1980.
  • the ratio between a reference value and the value for the sample may then be determined to calculate the absorbance of the sample.
  • the detection device 1980 may provide one or more suitable wavelengths using, for example, prisms, lenses, gratings and other suitable devices known in the art, such as those discussed above in reference to the OES devices, for example.
  • Signal 1985 may be provided to the optional amplifier 1990 for increasing the signal for provide to the display 1995.
  • AS device 1900 may further include suitable electronics known in the art, such as a microprocessor and/or computer and suitable circuitry to provide a desired signal and/or for data acquisition. Suitable additional devices and circuitry may be found, for example, on commercially available AS devices such as AAnalyst series spectrometers commercially available from PerkinElmer, Inc.
  • MS device 2000 includes a sample introduction device 2010, an atomization device 2020, a mass analyzer 2030, a detection device 2040, a processing device 2050 and a display 2060.
  • the sample introduction device 2010, the atomization device 2020, the mass analyzer 2030 and the detection device 2040 may be operated at reduced pressures using one or more vacuum pumps. In certain examples, however, only the mass analyzer 2030 and the detection device 2040 may be operated at reduced pressures.
  • the sample introduction device 2010 may include an inlet system configured to provide sample to the atomization device 2020.
  • the inlet system may include one or more batch inlets, direct probe inlets and/or chromatographic inlets.
  • the sample introduction device 2010 may be an injector, a nebulizer or other suitable devices that may deliver solid, liquid or gaseous samples to the atomization device 2020.
  • the atomization device 2020 may be any one or more of the atomization devices including a boost device discussed herein.
  • the atomization device 2020 may be a combination of two or more atomization devices at least one of which includes a boost device.
  • the mass analyzer 2030 may take numerous forms depending generally on the sample nature, desired resolution, etc. and exemplary mass analyzers are discussed further below.
  • the detection device 2040 may be any suitable detection device that may be used with existing mass spectrometers, e.g., electron multipliers, Faraday cups, coated photographic plates, scintillation detectors, etc., and other suitable devices that will be selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the processing device 2050 typically includes a microprocessor and/or computer and suitable software for analysis of samples introduced into MS device 2000.
  • One or more databases may be accessed by the processing device 2050 for determination of the chemical identity of species introduced into MS device 2000.
  • Other suitable additional devices known in the art may also be used with the MS device 2000 including, but not limited to, autosamplers, such as AS-90plus and AS- 93plus autosamplers commercially available from PerkinElmer, Inc. [193]
  • the mass analyzer of MS device 2000 may take numerous forms depending on the desired resolution and the nature of the introduced sample.
  • the mass analyzer is a scanning mass analyzer, a magnetic sector analyzer (e.g., for use in single and double-focusing MS devices), a quadrupole mass analyzer, an ion trap analyzer (e.g., cyclotrons, quadrupole ions traps), time-of-flight analyzers (e.g., matrix-assisted laser desorbed ionization time of flight analyzers), and other suitable mass analyzers that may separate species with different mass-to-charge ratios.
  • the atomization devices disclosed herein may be used with any one or more of the mass analyzers listed above and other suitable mass analyzers.
  • the atomization device in an MS device is a single chamber inductively coupled plasma with a boost device.
  • the atomization device is a single chamber flame source with a boost device.
  • the atomization device may include two or more chambers in which at least one of the chambers comprises a boost device as disclosed herein.
  • the boost devices disclosed here may be used with existing ionization methods used in mass spectroscopy.
  • electron impact sources with boost devices may be assembled to increase ionization efficiency prior to entry of ions into the mass analyzer.
  • chemical ionization sources with boost devices may be assembled to increase ionization efficiency prior to entry of ions into the mass analyzer.
  • field ionization sources with a boost device may be assembled to increase ionization efficiency prior to entry of ions into the mass analyzer.
  • the boost devices may be used with desorption sources such as, for example, those sources configured for fast atom bombardment, field desorption, laser desorption, plasma desorption, thermal desorption, electrohydrodynamic ionization/desorption, etc.
  • the boost devices may be configured for use with thermospray ionization sources, electrospray ionization sources or other ionization sources and devices commonly used in mass spectroscopy. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design suitable devices for ionization including boost devices for use in mass spectroscopy.
  • the MS devices disclosed here may be hyphenated with one or more other analytical techniques.
  • MS devices may be hyphenated with devices for performing liquid chromatography, gas chromatography, capillary electrophoresis, and other suitable separation techniques.
  • a suitable interface e.g., traps, jet separators, etc.
  • Sample exiting from the liquid chromatograph may also be deposited in suitable wires, cups or chambers for transport to the atomization devices of the MS device.
  • the liquid chromatograph may include a thermospray configured to vaporize and aerosolize sample as it passes through a heated capillary tube.
  • the thermospray may include its own boost device to increase ionization of species using the thermospray.
  • boost device to increase ionization of species using the thermospray.
  • MS devices at least one of which includes a boost device, are hyphenated with each other for tandem mass spectroscopy analyses.
  • one MS device may include a first type of mass analyzer and the second MS device may include a different or similar mass analyzer as the first MS device.
  • the first MS device may be operative to isolate the molecular ions
  • the second MS device may be operative to fragment/detect the isolated molecular ions. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design hyphenated MS/MS devices at least one of which includes a boost device.
  • a device for infrared spectroscopy is provided.
  • An IRS device includes a sample introduction device and an atomization device coupled or hyphenated to the infrared spectrometer.
  • the atomization device may be any of the atomization devices discussed herein or other suitable atomization devices including a boost device.
  • the atomization device may be configured to provide atoms and/or ions to the infrared spectrometer for detection.
  • the infrared spectrometer may be a single or double-beam spectrophotometer, an interferometer, such as those commonly used to perform Fourier transform infrared spectroscopy, etc.. and exemplary infrared spectrometers and devices for use in infrared spectrometers are described in U.S. Patent Nos. 4,419,575, 4,594,500, and 4,798,464, the entire disclosure of each of which is incorporated herein by reference for all purposes.
  • the spectrometer 2110 comprises a light source 2116, such as a HeNe laser, an interferometer flat mirror 2120, interferometer scan mirrors 2125, a dessicant box 2130, an infrared light source 2135, a beam splitter 2140, an interferometer flat mirror 2145, an adjustable toroidal window 2150, a fixed toroidal window 2175, a sample chamber 2160 with KBr windows 2162 and 2163, fixed toroidal windows 2165 and 2170 and an infrared detector 2180.
  • a light source 2116 such as a HeNe laser
  • an interferometer flat mirror 2120 interferometer scan mirrors 2125
  • a dessicant box 2130 an infrared light source 2135
  • a beam splitter 2140 an interferometer flat mirror 2145
  • an adjustable toroidal window 2150 a fixed toroidal window 2175
  • a sample chamber 2160 with KBr windows 2162 and 2163 fixed toroidal windows 2165 and 2170 and
  • the infrared spectrometer 2110 may employ a single interferometer for detection of species introduced into the sample chamber 2160.
  • Sample may be atomized or ionized using the atomization device 2115 and introduced into the sample chamber 2160 through a tube 2117, which provides fluid communication between the atomization device 2115 and the sample chamber 2160.
  • the tube 2117 may include cooling devices such that the temperature of any atoms or ions exiting the atomization device 2115 may be reduced prior to entry into the sample chamber 2160.
  • a valve or port (not shown) may be closed such that no additional sample exits or enters into the sample chamber.
  • the sample chamber 2160 may include temperature control to maintain the sample at a selected temperature.
  • the valve or port may be opened such that sample may be permitted to exit the sample chamber 2160 and may go to waste (not shown).
  • the flow from the atomization device 2115 into the sample chamber 2160 may be continuous.
  • a processing device 2190 such as a microprocessor or computer, which may be used to perform any necessary Fourier transforms and/or other desired data analyses, e.g., quantitative or qualitative analyses.
  • Suitable devices for coupling the atomization devices with infrared spectrometers will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure, and illustrative devices include, but are not limited to, capillary tubes, quartz tubes and other tubes.
  • capillary ionization may use very low power filament boost discharges and may be sustained in sub-millimeter bore quartz tubes, whereas with large secondary chambers with high solvent loads, or less expensive, low frequency high power RF sources, it may be desirable to use a very large secondary chamber diameter that is about 100 mm in diameter or larger.
  • Device 2200 includes an atomization device 2205, a light source 2210, a sample chamber 2220, a detection device 2230, an optional amplifier 2240 and a display 2250.
  • the detection device 2230 may be positioned ninety degrees from incident light 2212 from the light source 2210 to minimize the amount of light from the light source 2210 that arrives at the detection device 2230. Fluorescence, phosphorescence and Raman emissions may occur in 360 degrees so the positioning of the detection device 2230 to collect light emissions is not critical.
  • the atomization device 2205 may be any of the atomization devices discussed herein and other atomization devices configured with at least one boost de vice.
  • the atomization device 2205 may be configured to provide atoms and ions to the sample chamber 2220 through the tube 2222 which may be in fluid communication with the sample chamber 2220.
  • An optical chopper 2215 may be used where it is advantageous to pulse the light source 2210. Where the light source is a pulsed laser, the chopper 2215 may be omitted.
  • the light source 2210 excites one or more electrons into an excited state, e.g., into an excited singlet state, and the excited atom may emit photons as it decays back to a ground state.
  • the emission signal may be collected using the detection device 2230, which may be, for example, a monochromator with suitable optics such as prisms, echelle gratings and the like.
  • the detection device 2230 provides a signal to the optional amplifier 2240 for amplification of the signal, which may then be viewed using the display 2250.
  • the optional amplifier 2240 may be omitted.
  • the display 2250 is part of a computer or data acquisition system for analysis of the signals.
  • the sample chamber conditions may be varied depending on whether it is desirable to measure fluorescence, phosphorescence or Raman scattering.
  • the rate constant for internal conversion and/or fluorescence is typically much greater than the rate constant for phosphorescence and, as a result, either non-radiative emission or fluorescence emission dominates.
  • the sample chamber 2220 may include a matrix or solid support, e.g., silica, cellulose, acrylamide, etc., that atoms and/or ions may be adsorbed to or trapped in.
  • the sample chamber 2220 may be operated at reduced temperatures, e.g., 77 Kelvin, such that atoms and ions entering into the sample chamber 2220 may be frozen in a matrix.
  • immobilization of the species in a matrix may result in increased intersystem crossing to populate triplet energy levels, which may favor phosphorescence emission over fluorescence emission. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to select suitable sampling conditions for monitoring fluorescence, phosphorescence and Raman scattering.
  • a device for performing X-ray spectroscopy that includes a boost device is disclosed.
  • An atomization device including a boost device may be configured to provide atoms and ions to the sample chamber. Once in the sample chamber, the ions and atoms may be subjected to an X-ray source and X-ray absorption or emission may be monitored. Suitable instruments known in the art for performing X-ray spectroscopy include, for example, PHI 1800 XPS commercially available from Physical Electronics USA. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to adapt the boost devices disclosed here for use in X-ray spectroscopic techniques. [200] In accordance with certain examples, a gas chromatograph comprising a boost device is shown in FIG. 23.
  • a gas chromatograph 2300 includes a carrier gas 2310 in fluid communication with an injector 2320.
  • the flow rate of the carrier gas 2310 may be regulated using, for example, a pressure regulator, flow meter, etc.
  • the flow of the carrier gas 2310 may be split using a flow splitter 2315 such that a portion of the carrier gas 2310 passes through a tube in fluid communication with the injector 2310 and the remaining carrier gas 2310 may pass to waste.
  • the gas chromatograph 2300 may further include a heating device 2330, such as an oven.
  • the heating device 2330 may be operative to vaporize liquid sample injected through the injector 2320.
  • the heating device 2330 may include an internal boost device to assist with vaporization.
  • the column 2340 includes one or more stationary phases such as, for example, polydimethyl siloxane, poly(phenylmethyldimethyl) siloxane, poly(phenylmethyl) siloxane, poly(trifluoropropyldimethyl)siloxane, polyethylene glycol, poly(dicanoallyldimethyl) siloxane and other stationary phases commercially available from numerous manufacturers such as, for example, Phenomenex (Torrance, CA).
  • stationary phases such as, for example, polydimethyl siloxane, poly(phenylmethyldimethyl) siloxane, poly(phenylmethyl) siloxane, poly(trifluoropropyldimethyl)siloxane, polyethylene glycol, poly(dicanoallyldimethyl) siloxane and other stationary phases commercially available from numerous manufacturers such as, for example, Phenomenex (Torrance, CA).
  • the detector 2350 may be any one or more of detectors commonly used in gas chromatography including, but not limited to, flame ionization detectors, thermal conductivity detectors, thermionic detectors, electron-capture detectors, atomic emission detectors, photometric detectors, fluorescence detectors, photoionization detectors and the like.
  • the detector 2350 may include a boost device 2360, which may be used to promote ionization and/or excite ionized species in the detector 2350. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to configure gas chromatographs with suitable boost devices.
  • a gas chromatograph may be hyphenated or coupled to an additional instrument.
  • the gas chromatograph may be coupled to an inductively coupled plasma that includes a boost device.
  • a gas chromatograph may be used to vaporize and separate species in a sample such that individual species elute from the gas chromatograph.
  • the eluted species may be introduced into an inductively coupled plasma that is hyphenated to the gas chromatograph.
  • the inductively coupled plasma may include one or more boost devices for providing radio frequencies to promote atomization and/or ionization efficiency or for providing radio frequencies to excite atomized and/or ionized species.
  • a gas chromatograph may be coupled to a mass spectrometer that includes a boost device.
  • a gas chromatograph may be used to vaporize and separate species in a sample, and the separated species may be introduced into a mass spectrometer for fragmentation and detection.
  • a gas chromatograph may be hyphenated to an inductively coupled plasma which itself is coupled to a mass spectrometer. Additional devices and instruments that include boost devices will be readily coupled to gas chromatographs by the person of ordinary skill in the art, given the benefit of this disclosure.
  • a device for liquid chromatography e.g., for performing LC, fast protein liquid chromatography (FPLC), high performance liquid chromatography (HPLC), etc., comprising a boost device is shown in FIG. 24.
  • An LC device 2400 includes a carrier solvent reservoir 2410, a pump 2420, an injector 2430, a column 2450 and a detector 2460.
  • additional pumps and solvents may be included so that solvent gradient techniques may be implemented during the separation.
  • the carrier solvent generally depends on numerous factors including, but not limited to, the species in the sample to be separated and on the nature of the stationary phase in the column 2450.
  • the solvent(s) is typically degassed, e.g., using fritted filtration, bubbling nitrogen through the solvent, etc., prior to any separations. Suitable solvents for performing a given separation and methods for degassing the solvents will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the injector 2430 may be any injector that is configured to provide reproducible injections and, in certain examples, the injector 2430 is a loop injector, such as those commercially available from PerkinElmer, Inc, Beckman Instruments and the like. As sample is injected into the injector 2430, solvent carries sample into the column 2450 where separation of the species in the sample may occur.
  • the exact stationary phase in the column 2450 may vary depending the species to be separated, the solvent composition, etc., and in certain examples, the stationary phase may be selected from Cl 8 based stationary phases, silica, strong anion exchange materials, strong cation exchange materials, size exclusion media, and other stationary phases commonly used in LC, FPLC, and HPLC. Suitable stationary phases and LC columns are commercially available from numerous manufacturers such as, for example, Phenomenex, Inc. (Torrance, CA).
  • the separated species may elute from the column 2450 and enter into the detector 2460.
  • the detector 2460 may take numerous forms including, but not limited to, UV/Visible absorbance detectors, fluorescence detectors, conductivity detectors, electrochemical detectors, refractive index detectors, evaporative light scattering detectors, mass analyzers, nuclear magnetic resonance detectors, electron spin resonance detectors, circular dichroism detectors, etc.
  • the liquid sample may be nebulized, vaporized and atomized prior to introduction into the mass analyzer.
  • a chromatographic peak may be eluted from the column 2450, and vaporized and atomized using, for example, an inductively coupled plasma prior to introduction into the mass analyzer.
  • the inductively coupled plasma may include a boost device to promote ionization efficiency. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure to configure LC devices with the boost devices disclosed here.
  • an LC device may be hyphenated or coupled to an additional instrument.
  • the liquid chromatograph may be coupled to an inductively coupled plasma that includes a boost device.
  • a liquid chromatograph may be used to separate species dissolved in a liquid sample, and the eluted species may be introduced into an inductively coupled plasma that may be hyphenated to the liquid chromatograph and where atomization and/or detection may occur.
  • the inductively coupled plasma may include one or more boost devices for providing radio frequencies to promote atomization and/or ionization efficiency or for providing radio frequencies to excite atomized and/or ionized species.
  • the liquid chromatograph may be coupled to a mass spectrometer that includes a boost device.
  • the liquid chromatograph may be used to separate species in a sample, and the separated species may be introduced into a mass spectrometer for fragmentation and detection. It may be desirable to vaporize, using, for example, an inductively coupled plasma with a boost device, a thermospray with a boost device, etc., the liquid sample prior to introduction into the mass spectrometer. Additional devices and instruments that include boost devices will be readily coupled to liquid chromatographs by the person of ordinary skill in the art, given the benefit of this disclosure.
  • a device for nuclear magnetic resonance (NMR) including a boost device is disclosed.
  • the NMR is hyphenated to one or more additional devices that include the boost device.
  • species may be analyzed using NMR and then subsequent to NMR analysis may be introduced into an atomization device with a boost device for detection.
  • the species may first be atomized using the atomization device with a boost device and then the atoms and/or ions may be analyzed using NMR.
  • gas phase NMR studies may be performed to identify impurities with a high vapor pressure.
  • An NMR device 2500 includes a magnet 2510, an RF generator 2520, a receiver 2530, and a data acquisition device 2540, such as a computer.
  • the magnet 2510 includes a field-frequency lock 2512 and shim coils 2514 each of which may be in electrical communication with the data acquisition device 2540.
  • the probe 2516 may be positioned within the magnet 2510.
  • the probe 2516 may be electrically coupled to an RF transmitter 2522.
  • the RF transmitter 2522 may be in electrical communication with a frequency synthesizer 2524.
  • the frequency synthesizer 2524 may be in electrical communication with a pulse programmer 2526.
  • the RF generator 2520 may be configured to provide RF pulses, e.g., ninety degree pulses, 180 degree pulses, etc., to the probe 2516 for detection of species present in a sample contained within the probe 2516.
  • the signal may be sent to the receiver 2530 for detection.
  • the receiver 2530 may include a preamplifier 2532, a phase sensitive detector 2534, audio filters 2536 and an analog-to-digital converter 2538 for providing a signal to the data acquisition system 2540.
  • the probe may be configured to detect one or more magnetically active nuclei, e.g. 1 H, 13 C, 15 N, 31 P, etc.
  • the NMR device may be used for one, two, three, or four-dimensional NMR spectroscopic techniques, e.g., NOESY, COSY, TOCSY, etc.
  • an NMR device may be hyphenated to an atomization device with a boost device that may detect atomized and/or ionized species.
  • the NMR device may be hyphenated to a mass analyzer, which itself may be coupled to an atomization device, for analysis based on mass-to-charge ratios.
  • a tube or conduit may be provided between the probe of the NMR device and the additional device, e.g., an ICP or a mass analyzer, such that sample may be automatically transferred from the NMR device to the additional device.
  • the additional device e.g., an ICP or a mass analyzer
  • the person of ordinary skill in the art, given the benefit of this disclosure, will be able to select or design suitable NMR devices for hyphenating additional devices that include boost devices.
  • a device for electron spin resonance (ESR) that is hyphenated to an additional device including a boost device is provided.
  • ESR electron spin resonance
  • manganese with a spin number of 5/2 provides and ESR spectrum with 6 lines when free manganese is dissolved in water.
  • the exact line shape and line widths of the ESR spectrum may provide some indication of the environment experienced by the manganese ions.
  • the optical emission of atomic manganese may be detected at 257.610 nm.
  • Suitable ESR instruments are commercially available from numerous manufacturers including, but not limited to, Bruker Instruments (Germany).
  • the ESR may be coupled with an OES device using suitable tubing and connectors such that liquid sample from the ESR may be removed and delivered to the OES device without the need to manually inject sample into the OES device. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to couple ESR devices with additional devices and instruments including atomization devices with boost devices.
  • a spectrometer configured for measurement in the low UV and that includes a boost device.
  • low UV refers to measurements taken at or around 90-200 nm or less.
  • oxygen in the optical path may absorb emitted light (in the case of an OES device) or may absorb light used to excite atoms and ions (in the case of an AS device). This absorption by the oxygen may prevent detection of emission lines of atoms, such as chlorine, that emit in the low UV range.
  • a boost device with an OES device or with an AS device, low UV measurements may be obtained by eliminating any oxygen present in the optical path.
  • a first chamber may be used to contain the atomization source, and an interface may be used to draw atomized sample into a second chamber.
  • the second chamber may include a boost device.
  • the second chamber may be in fluid communication with a window or aperture on the spectrometer such that the optical path of the spectrometer is sealed off from any outside air or oxygen.
  • the optical path may be purged with a gas that does not absorb in the low UV, e.g., nitrogen, such that light emissions in the low UV, or light absorptions using low UV, are not interfered with by oxygen.
  • the device includes a boost device optically coupled to a window on a spectrometer such that substantially no oxygen or air exists in the light path of the spectrometer.
  • the device may be configured for optical emission such that light emissions in the low UV may be detected.
  • the device may be configured for atomic absorption such that species that absorb low UV light may be detected.
  • the detector may be optically coupled to a chamber comprising a boost device such that light emissions or absorptions in the chamber may be detected.
  • the chamber may also be optically coupled to a light source, e.g., a UV light source such as a laser, arc lamp or the like, such that light may be provided to the chamber to detect the presence of species that absorb the low UV light.
  • a light source e.g., a UV light source such as a laser, arc lamp or the like.
  • Illustrative configurations of low UV devices are described in more detail below in Examples 7 and 8 herein.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect metal species at levels at least about five-times less, more particularly at least ten times less, than detection levels obtainable using non-boosted ICP- OES devices is disclosed.
  • the boost devices disclosed here may increase the area of the emission region of OES devices by 5-fold, 10-fold or more.
  • the emission region of OES devices increases by about 5-fold, 10-fold or more without a substantial increase in background emission.
  • the background signal may increase, the increase in background signal may be proportionately lower than the increase in emission signal intensity to provide lower detection levels.
  • Such an increase in signal area may result in lowering of the OES detection limit of metals by at least about 5-fold, 10-fold or more.
  • OES devices that include boost devices to detect metal species at levels of at least about 5-times less than non boosted ICP- OES devices.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect aluminum at a level of about 0.18 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more. In certain other examples, the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission.
  • the OES device may be configured to detect aluminum at levels of about 0.11 ⁇ g/L or less, e.g. 0.09 ⁇ g/L, 0.045 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect arsenic at a level of about 0.6 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5 -fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of arsenic (about 3.0-3.6 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect arsenic at levels of about 0.4 ⁇ g/L or less, e.g. 0.3 ⁇ g/L, 0.15 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect boron at a level of about 0.05 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of boron (about 0.25-1.0 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect boron levels of about 0.033 ⁇ g/L or less, e.g.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect beryllium at a level of about 0.003 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more. In certain other examples, the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission.
  • the OES device may be configured to detect beryllium levels of about 0.002 ⁇ g/L or less, e.g. 0.0017 ⁇ g/L, 0.00085 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect cadmium at a level of about 0.014 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5 -fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of cadmium (about 0.07-0.1 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect cadmium levels of about 0.009 ⁇ g/L or less, e.g. 0.007 ⁇ g/L, 0.0035 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect cobalt at a level of about 0.05 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of cobalt (about 0.25 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect cobalt levels of about 0.033 ⁇ g/L or less, e.g., 0.025 ⁇ g/L, 0.01 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect chromium at a level of about 0.04 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of chromium (about 0.20-0.25 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect chromium levels of about 0.03 ⁇ g/L or less, e.g., 0.02 ⁇ g/L, 0.01 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect copper at a level of about 0.08 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more. In certain other examples, the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission.
  • the OES device is configured to detect copper levels of about 0.053 ⁇ g/L or less, e.g., 0.04 ⁇ g/L, 0.02 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect iron at a level of about 0.04 ⁇ g/L or less is provided.
  • the boost d evices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of iron (about 0.2-0.4 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect iron levels of about 0.027 ⁇ g/L or less, e.g., 0.02 ⁇ g/L, 0.01 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect manganese at a level of about 0.006 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of manganese (about 0.03-0.10 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect manganese levels of about 0.004 ⁇ g/L or less, e.g., 0.003 ⁇ g/L, 0.0015 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect molybdenum at a level of about 0.08 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5 -fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of molybdenum (about 0.40-2 ⁇ g/L) by at least 5 -fold.
  • the OES device may be configured to detect molybdenum levels of about 0.053 ⁇ g/L or less, e.g., 0.04 ⁇ g/L, 0.02 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect nickel at a level of about 0.08 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of nickel (about 0.4 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect nickel levels of about 0.053 ⁇ g/L or less, e.g., 0.04 ⁇ g/L, 0.02 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect lead at a level of about 0.28 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of lead (about 1.4 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect lead levels of about 0.19 ⁇ g/L or less, e.g., 0.14 ⁇ g/L, 0.007 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect antimony at a level of about 0.4 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of antimony (about 2-4 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect antimony levels of about 0.3 ⁇ g/L or less, e.g., 0.2 ⁇ g/L, 0.1 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect selenium at a level of about 0.6 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5 -fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of selenium (about 3-4.5 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect selenium levels of about 0.4 ⁇ g/L or less, e.g., 0.3 ⁇ g/L, 0.15 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect tantalum at a level of about 0.4 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more. In certain other examples, the boost devices disclosed herein may increase the emission region of OES devices by 5-fold or more without a substantial increase in background emission.
  • the OES device may be configured to detect tantalum levels of about 0.27 ⁇ g/L or less, e.g., 0.2 ⁇ g/L, 0.1 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect vanadium at a level of about 0.03 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5 -fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of vanadium (about 0.15-0.4 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect vanadium levels of about 0.02 ⁇ g/L or less, e.g., 0.015 ⁇ g/L, 0.0075 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation.
  • an OES device with an inductively coupled plasma and a boost device and configured to detect zinc at a level of about 0.04 ⁇ g/L or less is provided.
  • the boost devices disclosed here may increase the emission region of OES devices by 5-fold or more.
  • the boost devices disclosed herein may increase the emission region of OES devices by 5 -fold or more without a substantial increase in background emission. Such an increase may result in lowering of the OES detection limit of zinc (about 0.2 ⁇ g/L) by at least 5-fold.
  • the OES device may be configured to detect zinc levels of about 0.027 ⁇ g/L or less, e.g., 0.02 ⁇ g/L, 0.01 ⁇ g/L or less.
  • the OES device may include, for example, an atomization source and boost devices as disclosed herein, with such examples provided for illustration and not limitation. [226]
  • a spectrometer including an inductively coupled plasma and a boost device is provided.
  • the spectrometer may be configured to increase the detection region, e.g., the region where optical emissions are monitored or the region where absorption takes place, by at least about 5-fold, more particularly at least about 10-fold.
  • the boost devices disclosed herein may increase the detection region of OES devices by 5-fold or more without a substantial increase in background emission.
  • the spectrometer may be used for optical emissions and absorptions, fluorescence, phosphorescence, scattering, and other suitable techniques and may be hyphenated with one or more additional devices or instruments. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to assemble suitable spectrometers that are configured to increase the detection region by at least about
  • OES that includes an inductively coupled plasma and a boost device
  • the OES device includes a first chamber comprising the inductively coupled plasma and a second chamber with at least one boost device for exciting atoms or species.
  • the analyte may be diluted by at least about 20:1 with a carrier gas. This dilution results in lower sensitivity and/or requires the use of more concentrated samples to detect the species.
  • the second chamber in certain OES devices may be configured to extract atomized and ionized species to avoid the dilution effect caused by the carrier gas.
  • the second chamber may include a suitable interface or manifold such that sample from the interior portion of the plasma plume in the first chamber may be drawn into the second chamber and the carrier gas and cooling gas circulating near the outer portions of the first chamber may be removed.
  • This process may result in concentrating the sample in the second chamber.
  • the OES device may be configured such that sample introduced into the second chamber may be diluted by less than about 15:1 with carrier gas, more particularly by less than about 10:1 with carrier gas, e.g., the sample may be diluted by less than about 5:1 with carrier gas.
  • Such concentrating of sample in the second chamber due to less dilution with carrier gas may provide increased emissions which may provide improved detection limits.
  • the sample may be at least about 2-4 times more concentrated in the second chamber than in the first chamber.
  • the flame or primary plasma background signal may be removed from axial viewing by placing an optical stop or filter between the first and second chamber. This may result in further improvement of detection limits to at least about 5-fold lower than detection limits obtained using ICP-OES devices without second chambers including a boost device.
  • the exact improvement in the detection limit will depend on numerous factors including the size of the orifice or port in the manifold or interface, the amount of sample drawn into the second chamber, the length of the second chamber, the number of boost devices used in the second chamber, etc. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure to select and design suitable ICP-OES devices including second chambers with boost devices.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect aluminum at a level of about 0.7 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. This may result in lowering of the OES detection limit of aluminum (about 0.9 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect aluminum at levels of about 0.45 ⁇ g/L or less, e.g. 0.225 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect arsenic at a level of about 2.25 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% since the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of arsenic (about 3.0-3.6 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect arsenic at levels of about 1.5 ⁇ g/L or less, e.g. 0.75 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect boron at a level of about 0.18 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of boron (about 0.25-1.0 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect boron levels of about 0.125 ⁇ g/L or less, e.g., 0.06 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect beryllium at a level of about 0.013 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of beryllium (about 0.017-1.0 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect beryllium levels of about 0.085 ⁇ g/L or less, e.g. 0.045 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect cadmium at a level of about 0.0525 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of cadmium (about 0.07-0.1 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect cadmium levels of about 0.035 ⁇ g/L or less, e.g. 0.0175 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect cobalt at a level of about 0.19 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% since the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of cobalt (about 0.25 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect cobalt levels of about 0.125 ⁇ g/L or less, e.g., 0.0625 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect chromium at a level of about 0.15 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% since the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of chromium (about 0.20-0.25 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect chromium levels of about 0.10 ⁇ g/L or less, e.g., 0.05 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • a boost device such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma and a second chamber that includes a boost device and configured to detect copper at a level of about 0.30 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of copper (about 0.4-0.9 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect copper levels of about 0.20 ⁇ g/L or less, e.g., 0.1 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • a boost device such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect iron at a level of about 0.15 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of iron (about 0.2-0.4 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect iron levels of about 0.10 ⁇ g/L or less, e.g., 0.05 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • a boost device such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect manganese at a level of about 0.023 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% since the sample is diluted 25-75% less with carrier gas.
  • the OES device is configured to detect manganese levels of about 0.015 ⁇ g/L or less, e.g., 0.008 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of molybdenum (about 0.40-2 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect molybdenum levels of about 0.2 ⁇ g/L or less, e.g., 0.1 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect nickel at a level of about 0.3 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of nickel (about 0.4 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect nickel levels of about 0.20 ⁇ g/L or less, e.g., 0.10 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect lead at a level of about 1.0 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of lead (about 1.4 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect lead levels of about 0.014 ⁇ g/L or less, e.g., 0.7 ⁇ g/L, 0.35 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect antimony at a level of about 1.5 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of antimony (about 2-4 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect antimony levels of about 1 ⁇ g/L or less, e.g., 0.5 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect selenium at a level of about 2.25 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% because the sample is diluted 25-75% less with carrier gas.
  • Such an increase may result in lowering of the OES detection limit of selenium (about 3-4.5 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect selenium levels of about 1.5 ⁇ g/L or less, e.g., 0.75 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • a boost device such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect tantalum at a level of about 1.5 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% since the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of tantalum (about 2-3.5 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect tantalum levels of about 1.0 ⁇ g/L or less, e.g., 0.5 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • a boost device such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect vanadium at a level of about 0.11 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% since the sample is diluted 25-75% less with carrier gas.
  • the OES device may be configured to detect vanadium levels of about 0.075 ⁇ g/L or less, e.g., 0.038 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • an OES device with an inductively coupled plasma in a first chamber and a second chamber that includes a boost device and configured to detect zinc at a level of about 0.15 ⁇ g/L or less is provided.
  • the second chamber with boost device may improve the detection limit by about 25-75% since the sample is diluted 25-75% less with carrier gas. Such an increase may result in lowering of the OES detection limit of zinc (about 0.2 ⁇ g/L) by at least about 25-75% or more.
  • the OES device may be configured to detect zinc levels of about 0.10 ⁇ g/L or less, e.g., 0.05 ⁇ g/L or less.
  • the second chamber may include a boost device, such as, for example, the boost devices disclosed herein.
  • a spectrometer comprising an inductively coupled plasma and a boost device.
  • the spectrometer may be configured to substantially block the signal from the primary discharge so that the detection limit of the instrument may be improved, e.g., lowered, by at least about 3-fold or greater.
  • the detection limit may be lowered by at least about 5-fold, 10-fold or more using the boost devices provided herein.
  • a welding device with a boost device typically includes a torch and a boost device surrounding at least some portion of the torch plume.
  • the boost devices may be used in combination with torches for tungsten inert gas (TIG) welding, plasma arc welding (PAW), submerged arc welding (SAW), laser welding, high frequency welding and other types of welding that will be selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • TOG tungsten inert gas
  • PAW plasma arc welding
  • SAW submerged arc welding
  • laser welding high frequency welding and other types of welding that will be selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • FIG. 26 A A plasma arc welder 2600 includes a chamber 2610 with an electrode 2620.
  • the electrode 2620 may be any suitable material that may conduct a current, e.g., tungsten, copper, platinum, etc.
  • a boost device 2630 may be positioned toward the terminus of the electrode 2620 and near a nozzle tip 2640 of the plasma arc welder 2600.
  • the nozzle tip 2640 may be constructed from suitable materials known in the art, such as copper, for example.
  • a gas, such as argon, neon, etc., may be introduced into chamber 2610, e.g., through an inlet 2650, and as current is passed through the electrode 2620, an arc is generated between the electrode 2620 and the nozzle tip 2640.
  • a plasma may be created as the gas passes through the arc, and the boost device 2630, which may be in electrical communication with an RF transmitter or RF generator (not shown), may increase atomization and/or ionization of the gas to provide increased numbers of atoms and ions for welding.
  • the arc and/or plasma may be forced through a restricted opening 2660 in the nozzle tip 2640 to provide a very concentrated high temperature area that may be used for welding.
  • the plasma arc welder 2600 may further include a power supply, a water circulator for cooling, air supply regulators and additional devices to provide plasma arc welders including desired features. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design suitable welding devices that include boost devices such as those disclosed herein.
  • FIG. 26B an additional configuration of a DC or AC arc welder is shown in FIG. 26B.
  • An arc welder 2670 includes a torch body 2672, an electrode 2674, a boost source 2676, and an RF source 2678 in electrical communication with the boost device 2676.
  • the boost device 2676 may be configured to increase the temperature of a discharge 2680 by providing radio frequencies to the terminus of a torch body 2672.
  • Suitable DC or AC arc welders that include boost devices configured to increase the temperature of the discharge will be readily designed by the person of ordinary skill in the art, given the benefit of this disclosure.
  • FIG. 26B an additional configuration of a DC or AC arc welder is shown in FIG.
  • a primary shield gas such as, for example, argon, argon/oxygen, argon/carbon dioxide, or argon/helium.
  • the shield gas itself may be used to support an inductively coupled plasma discharge allowing the power to the primary arc generated by the electrode to be turned off or greatly reduced to provide discharge 2682.
  • the person of ordinary skill in the art, given the benefit of this disclosure, will be able to design suitable DC or AC arc welders, which include boost devices, that allow the power to the primary arc to be turned off or greatly reduced.
  • boost devices that allow the power to the primary arc to be turned off or greatly reduced.
  • a flame 2690 such as a flame used for flame brazing or soldering, may be boosted in temperature with a boost device 2692, which may be in electrical communication with an RF source 2694, to provide a discharge 2696, which has a temperature that may be higher than the temperature of the flame 2690.
  • the flame 2690 may be any of the illustrative flames disclosed herein or other suitable flames that will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure. It will also be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design flame brazing and soldering devices suitable for an intended use. [251]
  • a plasma cutter including a boost device is disclosed.
  • a plasma cutter 2700 includes a chamber or channel 2710 that includes an electrode 2720.
  • the chamber 2710 may be configured such that a cutting gas 2725 may flow through the chamber 2710 and may be in fluid communication with the electrode 2720.
  • the chamber 2710 may also be configured such that a shielding gas 2727 may flow around a cutting gas 2725 and an electrode 2720 to minimize interferences such as oxidation of the cutting surface.
  • a plasma cutter 2700 may further include a boost device 2730 configured to increase ionization of the cutting gas and/or increase the temperature of the cutting gas.
  • Suitable cutting gases will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure, and exemplary cutting gases include, but are not limited to, argon, hydrogen, nitrogen, oxygen and mixtures thereof.
  • exemplary cutting gases include, but are not limited to, argon, hydrogen, nitrogen, oxygen and mixtures thereof.
  • the cutting gas 2725 may be introduced through an inlet 2750 and may be atomized and/or ionized as it passes through the arc to create a plasma.
  • the arc and plasma may be forced through a restricted opening 2760 to provide a concentrated high temperature region that may be used for cutting, e.g., for cutting metals, steels, ceramics and the like.
  • the plasma cutter 2700 may be a component of a larger system that is configured to cut shapes or designs from a larger piece of metal.
  • the cutting process may be automated using robotic or mechanical arms and suitable computers and software.
  • the person of ordinary skill in the art, given the benefit of this disclosure, will be able to design suitable plasma cutters and systems implementing plasma cutters for cutting metals, ceramics and other materials.
  • a vapor deposition device that includes a boost device is disclosed.
  • the exact configuration of the vapor deposition device may take numerous forms and illustrative configurations may be found in vapor deposition devices commercially available from, for example, Veeco Instruments (Woodbury, NY) and other vapor deposition device manufacturers.
  • the vapor deposition device may be configured for atomic layer deposition (ALD), diamond like carbon deposition (DLC), ion beam deposition (IBD), physical vapor deposition, etc.
  • the vapor deposition device may be configured for chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • FIG. 28 an exemplary vapor deposition device is shown in FIG. 28.
  • a vapor deposition device 2800 includes a material source 2810, a chamber 2820, an energy source 2830, a vacuum system 2840 and an exhaust system 2850.
  • the material source 2810 may be in fluid communication with the chamber 2820 and may be configured to supply precursors or reactants to the chamber 2820.
  • the chamber 2820 includes the energy source 2830 which may be configured to provide heat or energy to volatize the delivered material or to promote reactions in the reaction chamber.
  • a vacuum system 2840 may be configured to remove by-products and waste from the chamber 2820 and may optionally include scrubbers or other treatment devices to treat the waste prior to release to an exhaust system 2850.
  • a sample or a substrate 2855 that species are to be deposited on may be loaded into the chamber 2820 using suitable assemblies, e.g., belts, conveyers,, etc.
  • Material may be introduced into the chamber 2820 and the energy source 2830 may be used to vaporize, atomize and/or ionize material from the material source 2810 to coat or deposit material onto the substrate 2855.
  • the energy source 2830 may include a boost device to assist in vaporization and/or atomization of the gas or species to be deposited.
  • Vapor deposition device 2800 may also include process control equipment including but not limited to, gauges, controls, computers, etc., to monitor process parameters such as, for example, pressure, temperature and time. Alarms and safety devices may also be included.
  • a sputtering device that includes a boost device is disclosed.
  • a sputtering device 2900 includes a target 2910 and an atomization device 2920 with a boost device.
  • the atomization device 2920 may be any of the atomization devices disclosed herein or other suitable atomization devices that will be selected or designed by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the atomization device 2920 may be a plasma that includes a boost device or a magnetron that includes a boost device.
  • the atomization device 2920 may be operative to strike the target 2910. Ions and atoms may be ejected from the target 2910 and may be deposited on a substrate 2930.
  • One or more assist or carrier gases may be used to flow atoms and ions by the substrate 2930.
  • a boost device may increase the energy of the atoms and/or ions, may increase the number of atoms and/or ions present, etc.
  • the nature of the material to be deposited depends on the selected target.
  • the target may include one or more materials selected from aluminum, gallium, arsenic, and silicon.
  • sputtering device 2900 may also be used with the sputtering device 2900.
  • boost devices may be used to increase the vaporization, sublimation, atomization of species such as gallium, aluminum, arsenic, arsenides, beryllium, silicon etc., for deposition onto surfaces, such as a GaAs wafer.
  • An MBE device 3000 includes a growth chamber 3010 for receiving a sample.
  • a sample holder 3020 and all other internal parts that are subjected to high temperatures may be constructed from materials such as tantalum, molybdenum and pyrolytic boron nitride, which do not substantially decompose or outgas impurities even when heated to temperatures around 1400 0 C.
  • Sample may be loaded into the growth chamber 3010 and placed on the sample holder 3020 which may include a heating device.
  • the sample holder 3020 rotates on two axes, as shown in FIG. 30.
  • the sample holder 3020 may be configured for continuous azimuthal rotation (CAR) of the sample, and is referred to in some instances as a CAR assembly 3022.
  • the CAR assembly includes an ion gauge 3025 mounted on the side opposite the sample to determine chamber pressure, or, in other examples, the ion gauge 3025 may be positioned facing the sources to measure beam equivalent pressure of material sources 3030, 3032, and 3034. Though the example in FIG.
  • a cooled cryoshroud 3028 e.g., cooled by liquid nitrogen or liquid helium, may be positioned between growth chamber walls and the CAR assembly 3022 and may be operative as an effective pump for many of the residual gasses in the growth chamber 3010.
  • one or more cryopumps may be used to remove gasses which are not pumped by the cryopanels. This pumping arrangement may keep the partial pressure of undesired gases, such as H 2 O, CO 2 , and CO, to less than about 10 "9 Torr, more particularly less then about 10 "11 Torr.
  • a detection device such as a mass spectrometer (MS) may be mounted in the vicinity of the CAR assembly 3022.
  • the material sources 3030, 3032, and 3034 may be independently heated until the desired material flux is achieved.
  • Computer controlled shutters 3040, 3042, and 3044 may be positioned in front of each of the material sources 3030, 3032, and 3034, respectively, to shutter the flux reaching the sample within a fraction of a second.
  • the exact distance of the material sources 3030, 3032, and 3034 from the sample may vary and typical distances are about 5-50 cm, e.g., 10, 20, 30 or 40 cm.
  • one or more of the material sources 3030, 3032, and 3034 may include a boost device, such as boost device 3050.
  • Boost device 3050 may be configured to increase vaporization, atomization, ionization, sublimation, etc., of material to be delivered by material source 3030. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design MBE devices including boost devices.
  • the MBE devices may further include RHEED guns, fluorescence screens and other suitable devices for monitoring growth in the chamber.
  • a chemical reaction chamber is disclosed. An exemplary chemical reaction chamber is shown in FIG. 31.
  • a reaction chamber 3100 includes an atomization source 3110 in the ⁇ nal communication with a tube or a chamber 3120 and a boost device 3130 configured to provide radio frequencies to chamber 3120.
  • the reaction chamber 3100 also includes a second boost device 3140.
  • the boost device 3130 may be in electrical communication with an RF source 3150, and the boost device 3140 may be in electrical communication with an RF source 3160. Either of the boost devices 3130 and 3140, or both, may be used to control or assist in chemical reactions within the chamber 3120.
  • the atomization source 3110 may be configured to control the heat or energy within the chamber 3120.
  • the boost device 3130 may provide radio frequencies to increase the energy in certain regions within the chamber 3120.
  • the additional energy supplied by the boost device 3130 may be used to supply additional activation energy to reactants, to favor, or disfavor, thermodynamically or kinetically, one or more specific reaction products, to maintain reactant species in the gas phase, or other suitable applications where it may be necessary to provide additional energy to reactants.
  • the chamber 3120 includes one or more catalysts for catalyzing a reaction.
  • the atomization source 3110 may be configured to supply gaseous catalyst to chamber 3120 for catalysis of one or more chemical reactions.
  • the atomization source 3110 may be an inductively coupled plasma that may atomize platinum or palladium, which may be supplied to chamber 3120 for catalysis.
  • a device for treatment of radioactive waste is disclosed.
  • the device is configured to dispose of tritiated waste.
  • tritiated waste may be introduced into a chamber, such as chamber 3200 shown in FIG. 32.
  • Chamber 3200 includes an atomization source 3210, a boost device 3220, an inlet 3230 and an outlet 3240.
  • the boost device 3220 may be in electrical communication with an RF source 3250.
  • Radioactive waste may be introduced into the reaction chamber 3200 and subjected to high temperature oxidation to decompose the radioactive waste.
  • the radioactive waste may be introduced into a plasma plume that has been boosted using the boost device 3220.
  • One or more catalysts may also be introduced into the chamber 3200 through the inlet 3230 to promote oxidation of the radioactive waste.
  • the reaction products may be condensed and added to a silica gel, or a clay, to provide stabilized forms that may be properly disposed of, e.g., by burial. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to design suitable devices for disposal of radioactive waste that include one or more of the boost devices disclosed here.
  • a light source is provided.
  • An illustrative light source is shown in FIG. 33.
  • the light source 3300 includes an atomization device 3310, a boost device 3320 in electrical communication with RF source 3330 and a sample inlet 3340 for introducing a chemical species that may emit light when excited.
  • a sample containing a single chemical species, or in certain examples, multiple chemical species may be introduced into the atomization device 3310 and excited using the atomization device 3310 and/or the boost device 3320.
  • a single species e.g., where substantially pure sodium ions dissolved in water are introduced into the atomization device 3310, a single wavelength of light may be emitted as excited sodium atoms decay.
  • This optical emission may be used as a substantially pure light source, e.g., a light source having a narrow width (e.g., less than about 0.1 nm) and approximately a single wavelength.
  • the chemical species may be sodium, antimony, arsenic, bismuth, cadmium, cesium, germanium, lead, mercury, phosphorus, rubidium, selenium, tellurium, tin, zinc, combinations thereof or other suitable metals that may be atomized, ionized and/or excited to provide optical emissions.
  • Suitable optics, choppers, reflective coatings and other devices may be used with the light source to focus or to direct the light or to provide pulsed light sources.
  • an atomization device that includes a microwave source or microwave oven is disclosed.
  • a microwave source or microwave oven is shown in FIG. 34.
  • the atomization device 3400 includes an atomization source 3410 within a microwave oven 3420.
  • a sample inlet 3430 may be configured to introduce sample into the atomization source 3410.
  • microwave oven 3420 may be operative to provide microwaves to atomization source 3410 which may promote ionization efficiency and/or may be used to excite atoms and ions.
  • Typical microwave ovens use an absorption cell as the oven cavity, and a microwave launcher and magnetron tube as an RF source.
  • the microwave launcher may be a small section of wave guide which mounts the magnetron tube forming the mode of propagation. This launches the RF energy into the oven or absorption cell. This RF energy may reflect off of the walls of the oven until it is absorbed and dissipated as heat. Because the oven is an unstructured cavity, it exhibits voltage maxima and nodes as constructive and destructive reflections collide.
  • the atomization source 3410 may be any of the atomization sources disclosed herein, e.g., flames, plasmas, arcs, sparks and other suitable atomization sources that will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the atomization source is a flame, the benefits of having both the high heat capacity of a flame needed for efficient desolvation and the extreme plasma temperatures needed for great excitation may be achieved.
  • the flame would tolerate greatly increased sample loading while leaving the RF power available for sample atomization and ionization.
  • a plasma plume may be formed, or in the case where the atomization source is a plasma, the plasma source may be extended.
  • RF energy including microwave energy, may be used as a boost source that can be directly coupled with a flame to not only dramatically increase the temperature of flame combustion but to actually change the nature of the resulting combination of both a flame and a plasma discharge.
  • a microwave cavity or resonator may be used in place of the microwave oven to ensure a continuous, well structured, and controlled discharge.
  • the plasma plume may be used for any one or more of the applications discussed herein, e.g., chemical analysis, welding, in a spectrometer, etc. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to implement atomization devices including atomization sources with microwave ovens.
  • the boost devices disclosed herein may be adapted for use in plasma displays.
  • plasma displays operate using noble gases and electrodes.
  • Noble gases such as xenon and neon, are contained within microstructures or cells positioned between at least two glass plates.
  • On both sides of each microstructure or cell are long electrodes.
  • a first set of electrodes referred to as the address electrodes, are arranged to sit behind the microstructures along the rear or back glass plate and are arranged vertically on the display.
  • Transparent glass electrodes are mounted on top of the microstructures along the front glass plate and are arranged horizontally on the display.
  • the transparent glass electrodes typically are surrounded by a dielectric material and are covered with a protective layer, such as magnesium oxide, for example.
  • the boost devices disclosed here may be adapted for use with plasma displays to enhance or increase ionization of the noble gases.
  • the noble gas in a particular microstructure or cell is ionized by charging the electrodes that intersect at that microstructure.
  • the electrodes are charged thousands or millions of times per second, charging each microstructure in turn.
  • a voltage differential is created between the electrodes such that an electric current flows through the noble gas in the microstructure. This current creates a rapid flow of charged particles, which stimulates the noble gas atoms and/or ions to release ultraviolet photons.
  • the ultraviolet photons in turn cause phosphors coated on the display to emit visible light.
  • the intensity of each sub-pixel color may be increased or decreased to create hundreds of different combinations of red, green and blue. In this way, the entire spectrum of colors may be produced.
  • miniaturized boost devices may be included that surround a portion or all of each microstructure.
  • each microstructure in a plasma display may be surrounded with a boost device to increase the rate of ionization of the noble gases and/or to increase the efficiency at which the noble gases release ultraviolet photons.
  • the boost from the boost device may be provided, e.g., in a continuous or pulsed mode, prior to, during or subsequent to charging of the electrodes.
  • the atomization devices disclosed here may be miniaturized such that portable devices are provided.
  • a portable device may include an atomization source, e.g., a flame, and a boost device.
  • the portable device includes an atomization source, e.g., a flame, and a microwave source. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to miniaturize the devices disclosed here.
  • the boost devices may be used with a microplasma in silicon, ceramics, or metal polymer arrays to provide miniaturized devices suitable for detection of chemical species or other applications.
  • Exemplary microplasmas are described, for example, in Eden et al., J. Phys. D: Appl. Phys. 36 (7 December 2003) 2869-2877 and Kikuchi et al., J. Phys. D: Appl. Phys. 37 (7 June 2004) 1537-1534, and other microplasmas, such as those used to join fiber optical cables, are described in U.S. Patent No. 4,118,618 and 5,024,725. [261] ⁇ n accordance with certain examples, a single use atomization device is disclosed.
  • the single use device includes an atomization device, a boost device and a detector.
  • the single use device may be configured with enough fuel or power to provide for a single analysis of a sample.
  • a water sample may be introduced into the device for measuring chemical species, such as lead.
  • the device includes a suitable amount of fuel or power to vaporize, atomize and/or ionize the water sample and may include suitable electronics and power sources for detection of the lead in the water sample.
  • the single use device may include a battery or fuel cell to provide sufficient power to a detector to measure the amount of light emitted from excited lead atoms and to provide sufficient power to the boost device.
  • the device may display the reading on an LCD screen or other suitable display to provide an indication of the lead levels.
  • a method of enhancing atomization of species using a boost device includes introducing a sample into an atomization device.
  • the atomization device may include, for example, a device disclosed herein and other suitable atomization devices, e.g., with boost devices that will be designed by the person of ordinary skill in the art, given the benefit of this disclosure.
  • the sample may be introduced, for example, by dissolving a suitable amount of sample in a solvent and injecting, aspirating, nebulizing, etc. the sample into the atomization device.
  • one or more boost devices may provide radio frequencies to provide additional energy for atomization.
  • the boost device may be operated using various powers, e.g., from about 1 Watt to about 10,000 Watts, and various radio frequencies, e.g. from about 10 kHz to about 10 GHz.
  • the boost device may be pulsed or operated in a continuous mode. In certain examples, the boost device may be used to provide additional energy for atomization to increase the number of species available for excitation.
  • a method of enhancing excitation of species using a boost device includes introducing a sample into an atomization device.
  • the atomization device may be, for example, an atomization device with a boost device as disclosed herein, with such examples provided for illustration and not limitation.
  • the sample may be introduced, for example, by dissolving a suitable amount of sample in a solvent and injecting, aspirating, nebulizing, etc. the sample into the atomization device.
  • the sample may be desolvated, atomized and/or excited by the energy from the atomization device.
  • a large amount of energy may be used in the desolvation process, leaving less energy for atomization and excitation.
  • one or more boost devices may supply radio frequencies to provide additional energy.
  • the boost device may be operated using various powers, e.g. from about 1 Watt to about 10,000 Watts, and various radio frequencies, e.g. from 10 kHz to about 10 GHz.
  • the boost device may be pulsed or operated in a continuous mode.
  • the boost device may be used to provide additional energy for excitation to provide a more intense optical emission signal, which may improve detection limits.
  • the person of ordinary skill in the art, given the benefit of this disclosure, will be able to use the boost devices disclosed here to enhance excitation of species.
  • a method of enhancing detection of chemical species includes introducing a sample into an atomization device configured to desolvate and atomize the sample.
  • the atomization device may be, for example, an atomization device with a boost device as disclosed herein, with such examples provided for illustration and not limitation.
  • the sample may be introduced, for example, by dissolving a suitable amount of sample in a solvent and injecting, aspirating, nebulizing, etc. the sample into the atomization device.
  • Radio frequencies may be provided using a boost device to increase signal intensity or to increase path length of a detectable signal. Such an increase in intensity and/or path length may improve detection limits so that lesser amounts of sample may be used or such that lower concentration levels may be detected.
  • Radio frequencies may be provided at various powers, e.g. about 1 Watts to about 10,000 Watts, and various frequencies, for example, about 10 kHz to about 10 GHz. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to use the boost devices disclosed here to enhance detection of species.
  • a method of detecting arsenic at levels below about 0.6 ⁇ g/L includes introducing a sample comprising arsenic into an atomization device to desolvate, atomize, and/or excite the sample.
  • the atomization device may be, for example, an atomization device with a boost device as disclosed herein, with such examples provided for illustration and not limitation.
  • the boost device may be configured to provide radio frequencies to provide a detectable signal from an introduced sample that includes arsenic at levels less than about 0.6 ⁇ g/L.
  • radio frequencies may be provided such that a detectable signal from a sample including arsenic at a level of about 0.3 ⁇ g/L or less is observed. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to configure and design suitable atomization devices with boost devices for detection of arsenic levels below 0.6 ⁇ g/L.
  • a method of detecting cadmium at levels below about 0.014 ⁇ g/L includes introducing a sample comprising cadmium into an atomization device to desolvate, atomize, and/or excite the sample.
  • the atomization device may be, for example, an atomization device with a boost device as disclosed herein, with such examples provided for illustration and not limitation.
  • the boost device may be configured to provide radio frequencies to provide a detectable signal from an introduced sample that includes cadmium at levels less than about 0.014 ⁇ g/L.
  • radio frequencies may be provided such that a detectable signal from a sample including cadmium at a level of about 0.007 ⁇ g/L or less is observed. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to configure and design suitable atomization devices with boost devices for detection of cadmium levels below 0.014 ⁇ g/L.
  • a method of detecting selenium at levels below about 0.6 ⁇ g/L is provided. The method includes introducing a sample comprising selenium into an atomization device to desolvate, atomize, and/or excite the sample.
  • the atomization device may be, for example, an atomization device with a boost device as disclosed herein, with such examples provided for illustration and not limitation.
  • the boost device may be configured to provide radio frequencies to provide a detectable signal from an introduced sample that includes selenium at levels less than about 0.6 ⁇ g/L.
  • radio frequencies are provided such that a detectable signal from a sample including selenium at a level of about 0.3 ⁇ g/L or less is observed. It will be within the ability of the person of ordinary skill in the art, given the benefit of this disclosure, to configure and design suitable atomization devices with boost devices for detection of selenium levels below about 0.6 ⁇ g/L.
  • a method of detecting lead at levels below about 0.28 ⁇ g/L includes introducing a sample comprising lead into an atomization device to desolvate, atomize, and/or excite the sample.
  • the atomization device may be, for example, an atomization device with a boost device as disclosed herein, with such examples provided for illustration and not limitation.
  • the boost device may be configured to provide radio frequencies to provide a detectable signal from an introduced sample that includes lead at levels less than about 0.28 ⁇ g/L.
  • radio frequencies are provided such that a detectable signal from a sample including lead at a level of about 0.14 ⁇ g/L or less is observed.
  • a method of separating and analyzing a sample comprising two or more species includes introducing a sample into a separation device.
  • the separation device may be any of the separation devices disclosed herein, e.g., gas chromatographs, liquid chromatographs, etc., and other suitable separation devices and techniques that may provide separation, e.g., baseline separation, of two or more species in a sample.
  • the species may be eluted from the separation device into an atomization device.
  • the atomization device may be, for example, an atomization device with a boost device as disclosed herein, with such examples provided for illustration and not limitation.
  • the atomization device may be configured to desolvate, atomize and/or excite the eluted species.
  • the eluted species may be detected using any one or more of the detection methods and techniques disclosed herein, e.g., optical emission spectroscopy, atomic absorption spectroscopy, mass spectroscopy, etc., and additional detection methods that will be readily selected by the person of ordinary skill in the art, given the benefit of this disclosure. [270] Certain specific examples are described below to illustrate further a few of the many applications of the boost devices disclosed herein.
  • An atomization device 4000 included a boost device supply control 4010, a boost device excitation source 4020, a plasma sensor 4030, an emergency off switch 4040, a plasma excitation source 4050 and a re-packaged Optima 4000 generator 4060.
  • the boost device supply control 4010 was used as the power supply and control for the boost device.
  • the plasma excitation source 4050 and boost device excitation source 4020 were located on a plate in the center of the atomization device 4000.
  • the plate used was a 1.5 foot by 2 foot optical bench purchased from the Oriel Corporation (Stratford, CT).
  • Each of plasma excitation source 4050 and boost device excitation source 4020 were mounted to a large aluminum angle bracket mounting the source above and at right angles to the plate. Slots were milled into the brackets allowing for lateral adjustment before securing to the plate.
  • the plasma sensor was mounted in an aluminum box that may be positioned for viewing the plasma.
  • the plasma sensor wiring was modified to shutdown both the plasma and boost device excitation sources in the event that the plasma was extinguished.
  • Emergency off switch 4040 was remotely mounted in an aluminum box that could be brought close to the operator. AC and DC power, and the plasma sensor wiring was placed under table 4070.
  • a boost device power supply and control box 4200 was configured with meters 4210 and 4220, a power control knob 4230 and an RF on/off switch 4240.
  • the boost device power supply and control box 4200 was constructed to manually control the power to the boost device excitation source in configurations where the boost device was positioned around a single chamber device (see Example 3 below) or in configurations where the boost device was positioned around a second chamber in fluid communication with the first chamber (see Example 4 below).
  • the control box 4200 contained the same type of 3 kW DC supply 4250, Corcom line filter 4270, solid state relay, and RF Interface board 4260 as found in the shipping version of the Optima 4000 generator, commercially available from PerkinElmer, Inc., as shown in FIG. 39.
  • a 48 V DC supply 4280 was not used.
  • An external 24 V DC supply 4110 was used instead (shown in FIG. 36).
  • Meters 4210 and 4220 were wired to measure the output voltage and current from the 3 kW DC supply 4250.
  • a hand wired control board allowed for rapid fabrication. The layout of the hand wired control board used is shown in FIG. 40 and a schematic of the board is shown in FIG. 41.
  • FIGS. 42-44 shows wire 4310 from an RF Interface board 4340 on the plasma source control box that drove solid state relay 4320 located in the boost device excitation source box (see FIG. 43).
  • the actual wiring for this plasma sense line is shown schematically in FIG. 41.
  • Power for the boost control box 4200 (FIG. 37) was tapped into from the 220 V AC line cord of the repackaged Optima 4000 generator 4060 (FIG. 35).
  • an optical plasma sensor 4410 was located above a plasma source 4420 and a boost device 4430.
  • the optical plasma sensor 4410 had a small hole (about 4.5 mm in diameter) drilled through the aluminum box and mounting bracket to allow the light from the plasma to fall on the optical plasma sensor 4410.
  • Optical plasma sensor 4410 protected the plasma source and the boost source by shutting them down in the event that the plasma was accidentally extinguished. All of the generator functions including primary plasma ignition, gas flow control, power setting and monitoring were performed under manual control. For automated operation, a computer control using standard WinLabTM software, such as that commercially available on the Optima 4000 instruments and purchased from the PerkinElmer, Inc., could be used.
  • the secondary boost power 4240 was switched on and manually controlled with the power control potentiometer 4230 (FIG. 38).
  • Many other safety features were defeated to allow operation of this setup, and there was no protection provided to the operator from hazardous voltages, hazardous fumes, or RF and UV radiation.
  • the person of ordinary skill in the art given the benefit of this disclosure, will be able to implement suitable safety features to provide a safely operating device and operating environment.
  • DC power sources 4510 and 4520 were used to power the protection circuitry for both plasma source 4540 and boost device source 4550.
  • DC power sources 4530 included four 1500 watt switching supplies. Two of the supplies were operated in parallel for a total of 3000 watts for the primary plasma RF source and the boost RF source.
  • Ignition arc ground return wire 4610 was a piece of number 18 gauge solid copper wire located near the end of the plasma torch and connected to grounded plate 4615 that the RF sources were mounted to. Wire 4610 provided a conductive path for the high voltage ignition arc to travel from the igniter assembly, through the center of the torch, traveling through the conductive argon gas and completing this path to ground.
  • the quartz torch was similar to the Optima 3000XL torch (part number N0695379 available from PerkinElmer, Inc.) but the outside body of the torch was lengthened by 2 inches to capture the extended plume region of the boosted plasma.
  • FIG. 48 shows a boost device 4625 that used a 17 1 A turn coil of number 18 gauge solid copper wire, but a 9 1 A turn coil of number 14 gauge solid copper wire provided better performance.
  • the turns of a secondary source 4630 were evenly spaced and did not touch each other or coil 4635 of plasma source 4640, or extend past the end of the torch.
  • Example 3 described below used the standard parts such as those found in the Optima 3000XL torch mount and sample introduction system.
  • igniter assembly 4650 a torch mount 4660, a 2mm bore alumina injector 4670, a cyclonic spray chamber 4680, a Type C Concentric Nebulizer 4690, and a peristaltic pump 4695 as shown in FIGS. 48 and 49.
  • a plasma was operated in a typical normal mode of operation using the extended torch described above, with the boost device turned off and with 1300 watts of power to generate the plasma, with 1.2 L/minute of nebulizer gas flow with 500 ppm of yttrium, with 15 L/minute of plasma gas (argon), and with 0.2 L/minute of auxiliary gas flow (also argon).
  • the plasma was operated with all of the same conditions, but with the boost device power on at about 800 watts (FIG. 51).
  • the enhancement of the ionization region of the yttrium sample was clearly observed (blue region in FIG. 51) with the boost device on.
  • FIG. 52 shows an Optima 3000XL sample introduction system 4710 which was similar to the system previously described in detail above.
  • the setup used the standard unmodified Optima 3000XL torch and a torch bonnet 4755, but the torch bonnet 4755 was installed on the back side of a load coil 4760, and aided to center the torch in the load coil 4760 (FIG. 53).
  • a primary RF source 4720 used a standard Optima 4000 load coil and fittings, available from PerkinElmer, Inc., but had the plastic faceplate removed.
  • Water cooled heat sinks 4775 and 4776 were used with a brass front mounting block 4730 and a back mounting block 4732, which were purchased from Wakefield Engineering (Pelham, NH) part number 180-20-6C and were 6 inch square heat sinks. These heat sinks were modified by cutting them in half and adding additional mounting holes. The waterlines of each half were rejoined with short pieces of tubing and hose clamps. All of the water cooled heat sinks were placed in a series water path and tied to a NesLab CFT-75 Chiller that was purchased from the former NesLab Instruments Inc. in Newington, NH, which is now Thermo Electron Corp. in Waltham, MA.
  • Brass mounting blocks 4730 and 4732 were cooled by sandwiching them between each half of the heat sink and bolted to Newport 360-90 mount 4750. This setup was used for both the front and rear mounting blocks 4730 and 4732, respectively (FIGS. 53 and 54).
  • a perspective view of the brass front mounting 4730 block is shown in FIG. 55.
  • This block was a simple brass rectangular block which was 5.8" high by 1.6" wide and 1 A" deep, with the center hole tapped for the 1 A inch NPT Swaglok fitting 4734. The block was tapped shallow enough that the Swaglok fitting 4734 did not protrude past the front of the mounting block.
  • Four perimeter holes 4862, 4864, 4866 and 4868 were for mounting interface plate 4860 (FIG. 56).
  • the holes were clearance holes in the block and plate for use with #8-32 screws, lock washers, and nuts.
  • the size of center hole orifice 4870 in interface plate 4860 may be varied to control the working pressure for a given flow rate.
  • the size of the orifice hole 4870 shown in FIG. 56 that was used was 0.155" inches (3.94 mm) in diameter.
  • Rear mounting block 4732 may be seen in FIGS. 57 and 58. This block was identical to the front block with the exception of the addition of side vacuum port 4792, and the fact that a !4" NPT tap was shallower so that Swaglok fitting 4794 did not completely block side vacuum fitting 4792.
  • Boost device 4820 used a load coil of 14 1 A turns of 1/8" copper tubing. The tubing oxidized quickly if not cooled, but oxidation did not hamper performance substantially. For ease of use, the coils of boost device 4820 were not cooled and were terminated in bare crimp ring lugs and mounted with #4 metric hardware onto the coil extensions described previously.
  • a side vacuum port 4792 was connected with 20 feet of 1 A" ID BEV-A-LINE tubing to either small 12V DC Sensidyne vacuum pump 4910 (part number C120CNSNF60PC1 and commercially available from Sensidyne in Clearwater, FL) and Brooks 0-40SCFH air flow meter 4912 with needle valve as shown in FIG. 59 (used on the computer controlled system), or to a Porter Instrument Company B-1187 0-20 liters/minute flow meter and needle valve assembly (not shown) and Trivac S25B vacuum pump 4920 shown in FIG. 60 (used on the manual controlled system).
  • the vacuum system used on the manual controlled system had a much higher capacity than what was desired.
  • plasma 4950 was operated at 1300 watts with the boost device off using the setup shown in FIGS. 53 and 54.
  • FIG. 62A shows plasma 4950 operating at 1300 watts with 15 L/minute of argon plasma gas, 1.2 L/minute of nebulizer gas flow with 500 ppm of sodium, and 0.2 L/min of auxiliary argon gas flow in the primary discharge.
  • the boost device power was approximately 800 watts at a frequency of 20 MHz, and the flow rate into the second chamber was a low flow of about 1-2 L/min. In operation, the nebulizer gas flow was increased above that which is used in typical ICP operation.
  • the plasma gas may be allowed to escape by the gap between the primary discharge and the interface of the secondary chamber.
  • the gas flow through the interface may be controlled and adjusted for best operation.
  • the interface of the secondary chamber has the added benefit of effectively blocking the background emission of the primary discharge. It is also possible to add an additional photon stop after the sample orifice to block the majority of or all of the primary discharge background light.
  • FIG. 62B is an enlarged view of the secondary chamber seen in FIG 62A for a comparative view.
  • FIG 62C shows a previous version of the secondary chamber (slightly shorter chamber and a few more turns of the boost device) operating at the same gas flow, sample, and primary discharge conditions, but using about 400 watts of boost power.
  • FIG 62D is also a previous version of the secondary chamber (as shown in FIG. 62C) with the same gas flow, and primary discharge conditions, but with a trace amount of yttrium (about 1-10 ppm) in water and using about 400 watts of boost power.
  • Example 2 - Optical Emission Using an ICP and boost Device Referring to FIG. 63, a picture of an inductively coupled plasma (ICP) source suitable for use in performing optical emission spectroscopy or mass spectroscopy is shown.
  • An ICP source 5000 includes hollow injector 5010 to introduce aerosolized sample into a plasma 5020, such as an RF induced argon plasma, contained in torch glassware 5030.
  • the ICP source 5000 also includes RF induction coils 5040.
  • an axial viewing window 5050 may be used to monitor axial emission 5060
  • radial viewing window 5070 may be used to monitor radial emission 5080.
  • ICP 5100 includes those components discussed above in reference to FIG. 63.
  • Sample is atomized into a fine aerosol mist before it passes into injector 5105 and into the plasma.
  • High current torus discharge region 5110 of the plasma is the brightest background region of the plasma.
  • Desolvation region 5120 of the sample is where solvent is removed from the injected sample.
  • Ionization region 5130 is the useful region of the plasma where the atomized and/or ionized sample will emit light.
  • the emitted light may be viewed axially 5140 or may be viewed radially 5150.
  • the blue emission may be about 5 times longer when viewed axially as compared to when viewed radially. Not only is the blue emission longer, but it is also brighter in the lower regions of the plasma; hence a greater than 5X improvement in signal may be realized with axial viewing
  • a region must be selected where there is high signal to background noise. The signal continues to get brighter as the viewing gets closer to the induction plates, but the background emission from the torus discharge increases faster than the signal as the viewing region approaches the induction plates.
  • FIG. 65 shows an ICP including a boost device.
  • An ICP 5200 includes a tube 5205, a torch 5210, an RF induction coil 5220, a boost device 5225 and a shear gas 5230.
  • the shear gas 5230 is operative to terminate the plasma beyond the end of tube 5205.
  • ICP 5200 generates a plasma 5235 which may be used to desolvate an introduced sample.
  • a desolvation region 5240 of the plasma 5235 provides energy to remove liquid from the sample.
  • An ionization region 5250 is the region where excited sample may emit light. By switching on a boost device 5225, the emission region may be extended, or emission may become more intense, or both.
  • FIG. 66 a second configuration of an ICP including a boost device is shown.
  • An ICP 5300 includes a torch 5310, an extended quartz tube 5320, an RF induction coil 5330 and a primary ICP RF source 5340.
  • the ICP 5300 also includes a boost device 5350 which is in electrical communication with RF source 5360. Referring to FIG. 67, emission 5410 is present when the boost device 5350 is "off so that no boost is provided.
  • a torch 5310 without any plasma is shown from an axial view (looking into the end of torch).
  • Torch 5310 includes exterior tube 5510, auxiliary gas tube 5520 and injector tube 5535 and injector hole 5530.
  • plasma discharge 5610 surrounds sample emission 5620 and the hole in injector tube 5630 is still visible through sample emission 5620.
  • emission 5710 from the sample overpowers the plasma discharge and the intensity of emission 5710 increases so that the injector tube may no longer be seen through the sample emission.
  • Inductively coupled plasma source 6000 included torch glassware 6005, a hollow injector 6010 for injection of aerosol sample into a plasma 6020.
  • the plasma 6020 was generated using induction coils 6030. Any emission from the plasma 6020 was viewed either axially 6040 or radially 6050. Axial viewing provided for lower detection limits. 1000 ppm of yttrium in water was injected into the ICP device shown in FIG. 73 using a Meinhard nebulizer and at a flow rate of about 1 mL/min. The plasma source was so bright that the emission could not be viewed without the optical attenuating aide of a piece of welding glass.
  • FIG. 73 shows the optical emission of the yttrium through the piece of welding glass.
  • a desolvation region 6110 (the reddish-pink region) is often referred to as a "bullet" due to its shape.
  • An ionization region 6120 was the region where the sample was ionized and emitted at its characteristic wavelength(s), which in this example where yttrium was used was blue light having a wavelength of about 371.029 nm.
  • a high current discharge region 6130 of the plasma 6020 was the brightest background region of the plasma.
  • FIG. 74 the effect of boost power on path length was demonstrated. Applying 1300 Watts (panel B) and 1500 Watts (panel C) of RF power through the boost device resulted in an increase in the emission path length when compared with the emission path length observed with 1000 Watts of applied power (Panel A).
  • Yttrium emission from the plasma of FIG. 73 is shown without (FIG. 75) and with the aid of a piece of welding glass (FIG. 76).
  • plasma plume 6210 extended beyond the end of quartz tube 6220.
  • blue ionization region 6310 was the region where the sample emission was viewed either axially or radially. As discussed below, using a boost device, the emission region of the sample was extended.
  • ICP 6400 including a boost device is shown.
  • ICP 6400 was assembled by replacing a standard quartz tube with an extended quartz tube 6405, as described above in Example 1.
  • the ICP 6400 included an RF injector 6410, induction coils 6420 in electrical communication with a plasma RF source 6430, and a boost device 6440 in electrical communication with an RF source 6450.
  • FIG. 78 shows a picture of the emission signal from a 500 ppm yttrium sample that was introduced into the device shown in FIG. 77 with the boost device turned off. Yttrium emission 6510 was relatively small when compared to the background plasma emission.
  • FIG. 80 shows a perspective view of the device of FIG. 77.
  • FIG. 81 an axial view of the device of FIG. 77.
  • FIG. 82 when the emission of the device assembled in FIG. 77 was viewed axially through a piece of welding glass and with boost device 6440 off, primary discharge 6610 and an injector 6620, and an injector hole 6625 may still be observed through yttrium emission 6630.
  • FIG. 84 shows the signal from aspirated water when boost device 6440 was turned off, and FIG. 85 shows the signal from the aspirated water when boost device 6440 was turned on at a power of about 800 Watts and at a frequency of about 10.4 MHz. The observed results were consistent with no substantial difference in plasma discharge background emission when a boost device was used.
  • a device 7000 included first chamber 7010 for generation of an inductively coupled plasma, as described above in Example 1.
  • First chamber 7010 included induction coils 7012.
  • a device 7000 also included a second chamber 7020 with a boost device 7022.
  • the second chamber 7020 included an interface 7024 which was configured with an orifice 7026 for introducing atoms and ions from the first chamber 7010 into the second chamber 7020.
  • An interface 7024 was configured to separate the small volume of ionized sample gas from the larger volume of plasma gas which was used to form the plasma discharge and to cool the torch glassware. This configuration preserved the concentration of the sample which otherwise was diluted as it mixed with the plasma gas.
  • the interface 7024 also separated the plasma discharge signal from the emission signal in the second chamber, and the coupling of energy from the induction coils 7012 and energy from the boost device 7022.
  • the interface 7024 also eliminated the high background light from the plasma discharge when viewing of the sample signal in the second chamber.
  • FIG. 87 shows an axial view of the orifice 7026 looking from first chamber 7010 towards the interface 7024.
  • FIG. 88 shows a top view looking down on interface 7024.
  • FIG. 89 shows an axial view of the orifice 7026 looking from second chamber 7020 towards interface 7024.
  • Orifice 7026 had a circular cross-section with a diameter of about 0.155 inches (3.94 mm). The distance between the surface of the manifold and the end of first chamber 7010 was about 3 mm.
  • the interface used in this example was for a completely different purpose and under completely different operating conditions.
  • the interface used here separated multiple discharges, the orifice hole was much larger than that used in ICP-MS, and the pressure at the back of the interface was much higher, typically close to atmospheric.
  • ICP-MS manifolds are used to separate the ICP source from the spectrometer, whereas interface 7024 was part of device 7000 itself.
  • vacuum pump 7040 and flow meter 7042 with a needle valve were used to draw atoms and ions from the first chamber 7010 into the second chamber 7020.
  • Vacuum pump was coupled to the second chamber 7020 through an inlet positioned at the opposite end of the second chamber 7020 from the interface 7024, as discussed above in Example 1.
  • the needle valve was used to control the flow rate of sample that was drawn into the second chamber 7020.
  • a primary discharge 7110 from an ICP torch 7120 is shown.
  • An emission signal 7130 from 200 ppm of sodium was yellow/orange in color.
  • a boost device 7140 was a coil of 1/8 inch copper tubing (6.5 turns) in electrical communication with RF source 7150 and was placed around a second chamber 7160.
  • a power of about 100 Watts and radio frequencies of about 30 MHz were used to excite the sodium atoms in the second chamber 7160. It was possible to vary the temperature of the regions of the emission signal 7130 in the second chamber 7160 by varying the power supplied to the boost device 7140.
  • An interface 7170 acted as a light shield blocking the bright primary background emission from being viewed when viewing the emission signal 7130 in the second chamber 7160. The interface 7170 also successfully prevented the sample from being diluted with the plasma gas.
  • an 18.5 turn boost device 7210 was used to extend the emission path length relative to the emission path length shown in FIG. 91.
  • the remaining components of the device were the same as those described above in reference to FIG. 91.
  • a power of about 300 Watts and radio frequencies of about 20 MHz were supplied to the boost device 7210.
  • the path length was extended along the entire length of the boost device 7210 to provide an emission signal 7220 from 200 ppm of sodium that was aspirated into the device. This result was consistent with extension of path length by using a boost device with additional coils. Air leaks were experienced with the early stage version of hardware depicted in FIGS. 91, 92 and 93.
  • FIG. 93 the device of FIG. 92 was used to test the effect of boost device power on emission signal intensity.
  • a power of about 800 Watts and radio frequencies of about 20 MHz were supplied to the 18.5 turn boost device 7210.
  • a flame source 7410 was positioned inside a microwave oven 7420 that was off.
  • the flame source 7410 was a cylindrical paraffin candle having dimensions of about 1.5 inches diameter by about 2 inches high.
  • the microwave oven 7420 was a standard Tappin (1000 Watt) microwave oven which was obtained from Scalzo- White Appliances (New Milford, CT).
  • the microwave oven 7420 used an absorption cell as the oven cavity, and a microwave launcher and magnetron tube as an RF source.
  • the flame source 7410 was lit and placed Vt of the way into the microwave oven 7420.
  • the fan of the microwave oven was blocked by a cardboard sheet covering the vent entering the absorption cell area to prevent any plasma plume from being disturbed and to maintain the maximum amount of ions and electrons present in the flame region.
  • the microwave was turned on high. As the flame source 7410 rotated on the on the turnstile, bright plasma 7510 (see FIG. 95) would form as the candle passed through the standing voltage maxima. The flame source 7410 returned to a regular flame in the voltage nodes where the RF excitation was a minimum. This result was consistent with there being enough free ions and electrons generated in a flame to allow for further ionization from external radio frequencies supplied by the microwave oven.
  • RF energy including microwave energy, may be used as a source of boost energy to greatly increase the temperature of a flame discharge.
  • Example 6 Single RF source
  • a device 9600 was assembled using a single RF source 9610 to power a primary induction coil 9620 and a boost device 9630.
  • This example used the same manually controlled hardware setup as described above except that only the primary RF source was used, a continuous ignition arc source (Solid State Spark Tester BD-40B purchased from Electro-Technic Products (Chicago, Illinois)) was used in place of the standard ignition source, and the plastic faceplate was removed from the standard RF source (a single Optima 4000 generator).
  • a boost device 9630 was made by wrapping 9 turns of 1/8" refrigerator grade copper tubing around extended quartz torch 9640. The extended quartz torch was the same torch as described above in the Example 1.
  • the boost device of this example was terminated with un-insulated crimp ring lugs. Since this setup was used for a short term investigation, no cooling of the boost device was used. Due to the lack of cooling, the coil turned black from the heat very quickly. For short term use, this discoloration did not significantly affect the performance.
  • the primary plasma formed in the boost region of the torch (high impedance region).
  • the plasma moved into the region of the primary two-turn induction coil 9620 (low impedance region).
  • the continuous ignition arc was removed.
  • the plasma remained and operated stably in the two-turn load coil region, and power from the boost coil added additional excitation energy to the sample emission region of the plasma (see FIG. 96B and FIG. 97 showing a close-up view of optical emission of 1000 ppm of Yttrium shown in FIG. 96B).
  • a single RF source may also be used to power coils in a configuration implementing an interface.
  • an RF source 9660 powers primary induction coil 9662 and boost device 9664.
  • Primary induction coil surrounds first chamber 9666
  • boost device 9664 surrounds secondary chamber 9668.
  • Interface 9670 is positioned at one end of secondary chamber 9668 and is configured to draw sample from primary chamber 9666 into secondary chamber 9668.
  • a vacuum pump 9672 may be used to control the pressure in the secondary chamber.
  • the interface 9670 may also have a small aperture to help control the flow of sample and the pressure of the chamber. This configuration simplifies construction of atomization devices including boost devices and provides the advantages obtained using an interface.
  • Example 7 - Low UV Optical Emission Spectrometer Referring to FIGS. 98A-98C, a spectrometer configured with a boost device and configured for optical emission measurements in the low UV is shown.
  • the device shown schematically in FIG. 98B is configured to exclude substantially all air or oxygen from the optical path such that emission lines having wavelengths in the low UV may be detected.
  • a shear gas nozzle extinguishes the end of the plasma. There is about a 0.5 inch space between the end of the plasma and the beginning of the transfer optics where air or oxygen may absorbs light, e.g., low UV light (see arrow in FIG. 98A).
  • the shear gas may be used to prevent melting of the transfer optics and to prevent damage to the aperture or the window located on the spectrometer.
  • Spectrometer 9700 comprises a primary chamber 9702 with plasma 9704 and induction coils 9707 electrically coupled to RF source 9708.
  • Spectrometer 9700 also includes a secondary chamber 9710 that includes a sampling interface 9706 with a sampling aperture 9712.
  • the secondary chamber 9710 also includes a boost device 9713 electrically coupled to an RF source 9714.
  • the secondary chamber 9710 is fluidically coupled to vacuum pump 9720 and optically coupled to a detector 9740 through a window or aperture 9730.
  • the vacuum pump 9720 may be used to draw sample from the primary chamber 9702 into the secondary chamber 9710 where it may be atomized, ionized and/or excited using the boost device 9713.
  • Purge ports 9742 and 9744 may be used to introduce an inert gas into the detector 9740 to purge the detector 9740 of air or oxygen to prevent unwanted absorption of the emission signal by air or oxygen.
  • the signal from the plasma in the primary chamber 9702 is minimized using the interface, and the plasma 9704 runs against the sampling interface 9706, which prevents air from entering through the sample aperture 9712 (see FIG. 98C). Because substantially no air or oxygen is in the optical path of the detector 9740, atoms and ions which emit light in the low UV may be detected with precision.
  • Spectrometer 9800 includes a light source 9802 (e.g., a UV light source), a primary chamber 9804 with a plasma 9806 and induction coils 9807 electrically coupled to an RF source 9808.
  • Spectrometer 9800 also includes a secondary chamber 9820 that includes a sampling interface 9822 with a sampling aperture 9824.
  • the secondary chamber 9820 also includes a boost device 9825 electrically coupled to an RF source 9826.
  • the secondary chamber 9820 is fluidically coupled to vacuum pump 9845, optically coupled to the light source 9802 through a window or aperture 9830 and optically coupled to a detector 9850 through a window or aperture 9840.
  • the vacuum pump 9845 may be used to draw sample from the primary chamber 9804 into the secondary chamber 9820 where it may be atomized and/or ionized using the boost device 9825.
  • Purge ports 9852 and 9854 may be used to introduce an inert gas into the detector 9850 to purge the detector 9850 of air or oxygen to prevent unwanted absorption of light from the light source 9802 by the air or oxygen. Using this configuration, the amount of light absorbed by sample in the secondary chamber 9820 may be detected by the detector 9850.
  • the signal from the plasma 9806 in the primary chamber 9804 may be minimized because of the right angle configuration, and the plasma 9806 runs against the sampling interface 9822, which prevents air from entering through the sample aperture 9824. Because substantially no air or oxygen is in the optical path of the detector 9850, atoms and ions which absorb light in the low UV may be detected with precision.

Abstract

L'invention concerne un dispositif d'accélération configuré pour communiquer une énergie supplémentaire à une source d'atomisation telle qu'une flamme ou un plasma. Dans certains exemples, un dispositif d'accélération peut être utilisé avec une flamme ou un plasma pour communiquer à la flamme ou au plasma une énergie supplémentaire afin d'en améliorer la désolvatation, l'atomisation et/ou l'ionisation. Dans d'autres exemples, le dispositif d'accélération peut être configuré pour fournir de l'énergie additionnelle à des fins d'excitation d'espèces. L'invention concerne des instruments et des dispositifs comprenant au moins un dispositif d'accélération.
PCT/US2006/023277 2005-06-17 2006-06-15 Dispositifs d'acceleration et procedes d'utilisation correspondants WO2006138441A2 (fr)

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EP06784915A EP1891407A4 (fr) 2005-06-17 2006-06-15 Dispositifs d'acceleration et procedes d'utilisation correspondants
AU2006259381A AU2006259381B2 (en) 2005-06-17 2006-06-15 Boost devices and methods of using them
CN200680021600XA CN101198846B (zh) 2005-06-17 2006-06-15 原子化装置
CA2608528A CA2608528C (fr) 2005-06-17 2006-06-15 Dispositifs d'acceleration et procedes d'utilisation correspondants
JP2008517097A JP2008544454A (ja) 2005-06-17 2006-06-15 増強装置及びその使用方法

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US11/156,249 US8622735B2 (en) 2005-06-17 2005-06-17 Boost devices and methods of using them
US11/156,274 2005-06-17
US11/156,274 US7742167B2 (en) 2005-06-17 2005-06-17 Optical emission device with boost device
US11/156,249 2005-06-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009004410A1 (de) * 2009-01-13 2010-07-22 Leibniz-Institut für Analytische Wissenschaften-ISAS-e.V. Vorrichtung und Verfahren von in einer Elektrolytlösung enthaltenen Analytsubstanzen
CN102843851A (zh) * 2012-05-04 2012-12-26 上海华力微电子有限公司 一种等离子发生装置及方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7511246B2 (en) 2002-12-12 2009-03-31 Perkinelmer Las Inc. Induction device for generating a plasma
US7742167B2 (en) 2005-06-17 2010-06-22 Perkinelmer Health Sciences, Inc. Optical emission device with boost device
US8622735B2 (en) 2005-06-17 2014-01-07 Perkinelmer Health Sciences, Inc. Boost devices and methods of using them
WO2014011919A2 (fr) 2012-07-13 2014-01-16 Perkinelmer Health Sciences, Inc. Torches et procédés d'utilisation de celles-ci
CN105229457B (zh) * 2013-05-17 2018-03-27 株式会社岛津制作所 电子捕获检测器
US10475626B2 (en) 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
WO2018175569A1 (fr) * 2017-03-21 2018-09-27 Nordson Corporation Ensemble lumière retrofit et pistolet de pulvérisation de poudre à lumière intégrée ou retrofit
CN109443406B (zh) * 2018-10-19 2021-04-09 中国科学院深圳先进技术研究院 声学流体传感器
CN112782174A (zh) * 2020-12-25 2021-05-11 西南化工研究设计院有限公司 一种高频无极氩放电离子化检测器及气体中硫、磷化合物的分析方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040001295A1 (en) 2002-05-08 2004-01-01 Satyendra Kumar Plasma generation and processing with multiple radiation sources

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492074A (en) * 1967-11-24 1970-01-27 Hewlett Packard Co Atomic absorption spectroscopy system having sample dissociation energy control
JPS5532317A (en) * 1978-08-28 1980-03-07 Asahi Chemical Ind High frequency magnetic field coupling arc plasma reactor
DE2947542A1 (de) * 1979-11-26 1981-06-04 Leybold-Heraeus GmbH, 5000 Köln Einrichtung zur ueberwachung und/oder steuerung von plasmaprozessen
US4300834A (en) * 1980-05-22 1981-11-17 Baird Corporation Inductively coupled plasma atomic fluorescence spectrometer
JPS61161138A (ja) * 1985-01-09 1986-07-21 Natl Inst For Res In Inorg Mater プラズマ利用化学反応装置
DE3521529A1 (de) * 1985-06-15 1987-01-02 Harald Dipl Chem Dr Berndt Vorrichtung zum zerstaeuben von probenfluessigkeit fuer spektroskopische zwecke
JPS62213056A (ja) * 1986-03-14 1987-09-18 Yokogawa Electric Corp 高周波誘導結合プラズマを用いた分析装置
JPH0624112B2 (ja) * 1986-04-16 1994-03-30 横河電機株式会社 高周波誘導結合プラズマ・質量分析計
JPS62273047A (ja) * 1986-05-22 1987-11-27 Natl Inst For Res In Inorg Mater 燃焼炎複合高周波熱プラズマ発生装置
US4955717A (en) * 1986-12-02 1990-09-11 Geochemical Services, Inc. Demand modulated atomization apparatus and method for plasma spectroscopy
JPS63158799A (ja) * 1986-12-22 1988-07-01 日本高周波株式会社 多段無電極高周波プラズマ反応装置
JPH0781953B2 (ja) * 1990-02-07 1995-09-06 川崎製鉄株式会社 分析試料の原子化方法
GB9226335D0 (en) * 1992-12-17 1993-02-10 Fisons Plc Inductively coupled plasma spectrometers and radio-frequency power supply therefor
EP0468742B1 (fr) * 1990-07-24 1996-03-27 Varian Australia Pty. Ltd. Spectroscopie utilisant un plasma à couplage inductif
JPH05119006A (ja) * 1991-10-30 1993-05-14 Mitsubishi Heavy Ind Ltd 炭化水素濃度測定装置
JPH05142200A (ja) * 1991-11-20 1993-06-08 Sumitomo Electric Ind Ltd 元素分析法
US5217362A (en) * 1991-12-30 1993-06-08 Thompson Richard E Method for enhanced atomization of liquids
JP3116151B2 (ja) * 1993-03-05 2000-12-11 セイコーインスツルメンツ株式会社 加熱気化誘導結合プラズマ質量分析装置
EP0673186A1 (fr) * 1994-03-17 1995-09-20 Fuji Electric Co., Ltd. Procédé et appareillage de génération d'un plasme inductif
US6639227B1 (en) * 2000-10-18 2003-10-28 Applied Materials, Inc. Apparatus and method for charged particle filtering and ion implantation
CN2482075Y (zh) * 2001-04-25 2002-03-13 王澎蛟 原子吸收分光光度计
US6693253B2 (en) * 2001-10-05 2004-02-17 Universite De Sherbrooke Multi-coil induction plasma torch for solid state power supply
JP2003168594A (ja) * 2001-11-29 2003-06-13 High Frequency Heattreat Co Ltd 高周波熱プラズマ装置
JP2003168595A (ja) * 2001-11-29 2003-06-13 High Frequency Heattreat Co Ltd 高周波熱プラズマ装置
CN1639832B (zh) * 2002-03-08 2010-05-26 美国瓦里安澳大利亚有限公司 等离子体质谱分光计

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040001295A1 (en) 2002-05-08 2004-01-01 Satyendra Kumar Plasma generation and processing with multiple radiation sources

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1891407A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009004410A1 (de) * 2009-01-13 2010-07-22 Leibniz-Institut für Analytische Wissenschaften-ISAS-e.V. Vorrichtung und Verfahren von in einer Elektrolytlösung enthaltenen Analytsubstanzen
DE102009004410B4 (de) * 2009-01-13 2011-06-01 Leibniz-Institut für Analytische Wissenschaften-ISAS-e.V. Vorrichtung und Verfahren von in einer Elektrolytlösung enthaltenen Analytsubstanzen
CN102843851A (zh) * 2012-05-04 2012-12-26 上海华力微电子有限公司 一种等离子发生装置及方法

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CN102291921B (zh) 2014-09-17
CA2608528C (fr) 2014-12-23
AU2006259381B2 (en) 2012-01-19
EP1891407A4 (fr) 2009-09-23
AU2006259381A1 (en) 2006-12-28
EP1891407A2 (fr) 2008-02-27

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